WO2009078370A1 - ガスセンサ - Google Patents

ガスセンサ Download PDF

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Publication number
WO2009078370A1
WO2009078370A1 PCT/JP2008/072709 JP2008072709W WO2009078370A1 WO 2009078370 A1 WO2009078370 A1 WO 2009078370A1 JP 2008072709 W JP2008072709 W JP 2008072709W WO 2009078370 A1 WO2009078370 A1 WO 2009078370A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
gas
detecting
gas detecting
contact layer
Prior art date
Application number
PCT/JP2008/072709
Other languages
English (en)
French (fr)
Inventor
Koichi Ikawa
Masahito Kida
Shinichiro Kito
Yoshinori Tsujimura
Takio Kojima
Original Assignee
Ngk Spark Plug Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ngk Spark Plug Co., Ltd. filed Critical Ngk Spark Plug Co., Ltd.
Priority to EP08862844.1A priority Critical patent/EP2224231B1/en
Priority to JP2009517782A priority patent/JP5161210B2/ja
Priority to US12/527,824 priority patent/US8393196B2/en
Publication of WO2009078370A1 publication Critical patent/WO2009078370A1/ja

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • G01N27/128—Microapparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)

Abstract

　ガス検知層（４）とシリコン基板（２）及び絶縁被膜層（３）から構成される基体（１５）との間に密着層７を形成し、両者の密着性を高め剥離を防止する。検知電極（６）のガス検知層（４）と対向する側の面（６１）及びその両側面は、ガス検知層（４）と当接することで、ガス検知層（４）と検知電極（６）とが電気的に接続され、特定ガスの濃度変化に応じて変化するガス検知層（４）の電気的特性が良好に検知される。また、検知電極（６）は、ガス検知層（４）と接触し、密着層（７）とは非接触であるので、密着層（７）を完全な絶縁層にする必要が無くなり、不完全な絶縁膜や導電性の膜でも密着層として使用可能となる。そのため、密着層（７）の選択肢が広がる。
PCT/JP2008/072709 2007-12-14 2008-12-12 ガスセンサ WO2009078370A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP08862844.1A EP2224231B1 (en) 2007-12-14 2008-12-12 Gas sensor
JP2009517782A JP5161210B2 (ja) 2007-12-14 2008-12-12 ガスセンサ
US12/527,824 US8393196B2 (en) 2007-12-14 2008-12-12 Gas sensor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-323238 2007-12-14
JP2007323238 2007-12-14

Publications (1)

Publication Number Publication Date
WO2009078370A1 true WO2009078370A1 (ja) 2009-06-25

Family

ID=40795486

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/072709 WO2009078370A1 (ja) 2007-12-14 2008-12-12 ガスセンサ

Country Status (5)

Country Link
US (1) US8393196B2 (ja)
EP (1) EP2224231B1 (ja)
JP (1) JP5161210B2 (ja)
KR (1) KR20100101046A (ja)
WO (1) WO2009078370A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022506000A (ja) * 2018-06-29 2022-01-17 上海汽▲車▼集▲團▼股▲フン▼有限公司 セラミックベースマイクロホットプレート及びその製造方法

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ITMI20080532A1 (it) * 2008-03-28 2009-09-29 St Microelectronics Srl Metodo di fabbricazione di un sensore di gas integrato su substrato semiconduttore
JP5287807B2 (ja) * 2009-10-28 2013-09-11 株式会社デンソー ガスセンサ素子
EP2559996B1 (en) 2011-08-16 2017-11-22 Nxp B.V. Gas sensor
EP2762865A1 (en) * 2013-01-31 2014-08-06 Sensirion Holding AG Chemical sensor and method for manufacturing such a chemical sensor
KR101772575B1 (ko) * 2013-07-19 2017-08-30 한국전자통신연구원 저전력 구동을 위한 마이크로 반도체식 가스 센서 및 그 제조 방법
US9453807B2 (en) 2014-04-08 2016-09-27 Ams International Ag Thermal conductivity gas sensor with amplification material
CN105118854B (zh) * 2015-07-01 2019-03-01 京东方科技集团股份有限公司 金属氧化物半导体薄膜、薄膜晶体管、制备方法及装置
TWI565944B (zh) * 2015-12-11 2017-01-11 台灣奈米碳素股份有限公司 一種氣體感測器及其製作方法
EP3475690A4 (en) * 2016-10-05 2019-05-08 Hewlett-Packard Development Company, L.P. INSULATED SENSORS
KR102630480B1 (ko) * 2016-10-06 2024-01-31 엘지전자 주식회사 센서
US11257985B2 (en) 2016-12-05 2022-02-22 Suzhou Lekin Semiconductor Co., Ltd. Semiconductor element and sensing device having a light emitting unit and a sensor unit
NL2020518B1 (en) * 2018-03-02 2019-09-12 Mimetas B V Device and method for performing electrical measurements

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63279150A (ja) 1987-05-11 1988-11-16 Fuji Electric Co Ltd 半導体式ガスセンサ
JPS6417460U (ja) * 1987-07-21 1989-01-27
JPH0551096B2 (ja) 1986-08-13 1993-07-30 New Cosmos Electric Co
JPH0627719B2 (ja) 1988-04-09 1994-04-13 新コスモス電機株式会社 におい検知装置
JPH0933470A (ja) 1995-07-14 1997-02-07 Ricoh Co Ltd ガスセンサ
JP2001091486A (ja) 1999-09-20 2001-04-06 Yazaki Corp 熱型センサ
JP2002286673A (ja) * 2001-03-28 2002-10-03 Denso Corp ガスセンサ及びその製造方法
JP2005164570A (ja) * 2003-11-11 2005-06-23 Ngk Spark Plug Co Ltd ガスセンサ及びその製造方法
JP2005226992A (ja) * 2004-02-10 2005-08-25 Fuji Electric Fa Components & Systems Co Ltd 薄膜ガスセンサの製造方法
JP2007139669A (ja) * 2005-11-21 2007-06-07 Ngk Spark Plug Co Ltd ガスセンサ

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03156354A (ja) * 1989-11-14 1991-07-04 Toyota Motor Corp 積層型ガスセンサの製造方法
JP2565436B2 (ja) 1991-08-22 1996-12-18 株式会社タツノ・メカトロニクス 給油装置
JPH0627719A (ja) 1992-07-13 1994-02-04 Konica Corp 静電荷像現像剤
US5510013A (en) * 1993-09-10 1996-04-23 Robert Bosch Gmbh Layer system for electrochemical probes
JPH09229840A (ja) 1996-02-20 1997-09-05 Nohmi Bosai Ltd ガスセンサ
DE10213805A1 (de) * 2001-03-28 2002-11-07 Denso Corp Gassensor und Verfahren zum Herstellen eines Gassensors
JP5138134B2 (ja) * 2001-07-16 2013-02-06 株式会社デンソー 薄膜式センサの製造方法ならびにフローセンサの製造方法
JP3759027B2 (ja) 2001-12-07 2006-03-22 フィガロ技研株式会社 ガスセンサとその製造方法
JP3810324B2 (ja) 2002-01-29 2006-08-16 日本特殊陶業株式会社 ガスセンサ
JP5021377B2 (ja) 2006-06-16 2012-09-05 日本特殊陶業株式会社 ガスセンサ
JP5134490B2 (ja) * 2008-10-10 2013-01-30 日本特殊陶業株式会社 ガスセンサ

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0551096B2 (ja) 1986-08-13 1993-07-30 New Cosmos Electric Co
JPS63279150A (ja) 1987-05-11 1988-11-16 Fuji Electric Co Ltd 半導体式ガスセンサ
JPS6417460U (ja) * 1987-07-21 1989-01-27
JPH0627719B2 (ja) 1988-04-09 1994-04-13 新コスモス電機株式会社 におい検知装置
JPH0933470A (ja) 1995-07-14 1997-02-07 Ricoh Co Ltd ガスセンサ
JP2001091486A (ja) 1999-09-20 2001-04-06 Yazaki Corp 熱型センサ
JP2002286673A (ja) * 2001-03-28 2002-10-03 Denso Corp ガスセンサ及びその製造方法
JP2005164570A (ja) * 2003-11-11 2005-06-23 Ngk Spark Plug Co Ltd ガスセンサ及びその製造方法
JP2005226992A (ja) * 2004-02-10 2005-08-25 Fuji Electric Fa Components & Systems Co Ltd 薄膜ガスセンサの製造方法
JP2007139669A (ja) * 2005-11-21 2007-06-07 Ngk Spark Plug Co Ltd ガスセンサ

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2224231A4 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022506000A (ja) * 2018-06-29 2022-01-17 上海汽▲車▼集▲團▼股▲フン▼有限公司 セラミックベースマイクロホットプレート及びその製造方法
JP7270937B2 (ja) 2018-06-29 2023-05-11 上海汽▲車▼集▲團▼股▲フン▼有限公司 セラミックベースマイクロホットプレート及びその製造方法

Also Published As

Publication number Publication date
US20100147685A1 (en) 2010-06-17
US8393196B2 (en) 2013-03-12
EP2224231A1 (en) 2010-09-01
JP5161210B2 (ja) 2013-03-13
JPWO2009078370A1 (ja) 2011-04-28
EP2224231A4 (en) 2016-06-29
KR20100101046A (ko) 2010-09-16
EP2224231B1 (en) 2019-12-04

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