WO2009069421A1 - 弾性波装置 - Google Patents

弾性波装置 Download PDF

Info

Publication number
WO2009069421A1
WO2009069421A1 PCT/JP2008/069567 JP2008069567W WO2009069421A1 WO 2009069421 A1 WO2009069421 A1 WO 2009069421A1 JP 2008069567 W JP2008069567 W JP 2008069567W WO 2009069421 A1 WO2009069421 A1 WO 2009069421A1
Authority
WO
WIPO (PCT)
Prior art keywords
elastic wave
wave device
protection film
silicon
nitrogen
Prior art date
Application number
PCT/JP2008/069567
Other languages
English (en)
French (fr)
Inventor
Tsutomu Takai
Norihiro Hayakawa
Taro Nishino
Original Assignee
Murata Manufacturing Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co., Ltd. filed Critical Murata Manufacturing Co., Ltd.
Priority to JP2009543728A priority Critical patent/JP5158092B2/ja
Priority to CN2008801172474A priority patent/CN101868915B/zh
Priority to DE112008003117.7T priority patent/DE112008003117B4/de
Publication of WO2009069421A1 publication Critical patent/WO2009069421A1/ja
Priority to US12/784,564 priority patent/US8120230B2/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02984—Protection measures against damaging
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H03H9/02937—Means for compensation or elimination of undesirable effects of chemical damage, e.g. corrosion
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/058—Holders; Supports for surface acoustic wave devices
    • H03H9/059—Holders; Supports for surface acoustic wave devices consisting of mounting pads or bumps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
    • H03H9/1078—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a foil covering the non-active sides of the SAW device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
    • H03H9/1085—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a non-uniform sealing mass covering the non-active sides of the BAW device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05568—Disposition the whole external layer protruding from the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/0557—Disposition the external layer being disposed on a via connection of the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H2009/0019—Surface acoustic wave multichip

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

　特性を安定させることができる、保護膜を備えた弾性波装置を提供する。 　弾性波装置１１は、（ａ）基板１２にＩＤＴ電極２１が形成された弾性波素子と、（ｂ）弾性波素子を覆うように形成される保護膜１５とを備える。保護膜１５は、珪素と窒素を主成分とする窒化シリコン（ＳｉＮＸ）膜であり、珪素と窒素との組成比を１：Ｘで表すとき、Ｘが１．１５以下である。
PCT/JP2008/069567 2007-11-28 2008-10-28 弾性波装置 WO2009069421A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2009543728A JP5158092B2 (ja) 2007-11-28 2008-10-28 弾性波装置
CN2008801172474A CN101868915B (zh) 2007-11-28 2008-10-28 弹性波装置
DE112008003117.7T DE112008003117B4 (de) 2007-11-28 2008-10-28 Schallwellenvorrichtung
US12/784,564 US8120230B2 (en) 2007-11-28 2010-05-21 Acoustic wave device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007307650 2007-11-28
JP2007-307650 2007-11-28

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/784,564 Continuation US8120230B2 (en) 2007-11-28 2010-05-21 Acoustic wave device

Publications (1)

Publication Number Publication Date
WO2009069421A1 true WO2009069421A1 (ja) 2009-06-04

Family

ID=40678324

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/069567 WO2009069421A1 (ja) 2007-11-28 2008-10-28 弾性波装置

Country Status (5)

Country Link
US (1) US8120230B2 (ja)
JP (2) JP5158092B2 (ja)
CN (1) CN101868915B (ja)
DE (1) DE112008003117B4 (ja)
WO (1) WO2009069421A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011172190A (ja) * 2010-02-22 2011-09-01 Kyocera Corp 弾性波装置及びその製造方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9142804B2 (en) * 2010-02-09 2015-09-22 Samsung Display Co., Ltd. Organic light-emitting device including barrier layer and method of manufacturing the same
US8638318B2 (en) * 2010-05-28 2014-01-28 Elo Touch Solutions, Inc. Multi-layer coversheet for saw touch panel
US9293684B2 (en) * 2011-07-29 2016-03-22 Kyocera Corporation Electronic part comprising acoustic wave device
US9680445B2 (en) * 2014-10-31 2017-06-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Packaged device including cavity package with elastic layer within molding compound
JP2019145895A (ja) * 2018-02-16 2019-08-29 株式会社村田製作所 弾性波装置、マルチプレクサ、高周波フロントエンド回路及び通信装置
JP2019145886A (ja) * 2018-02-16 2019-08-29 株式会社村田製作所 弾性波装置、高周波フロントエンド回路及び通信装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07254835A (ja) * 1994-03-15 1995-10-03 Murata Mfg Co Ltd 弾性表面波共振子フィルタ
JPH1131759A (ja) * 1997-07-14 1999-02-02 Sony Corp 吸湿保護膜を有する実装回路基板及び実装回路基板の吸湿保護膜形成方法
JP2001044787A (ja) * 1999-07-30 2001-02-16 Kyocera Corp 弾性表面波装置
JP2003101381A (ja) * 2001-09-25 2003-04-04 Tdk Corp 弾性表面波装置
JP2003198321A (ja) * 2001-10-17 2003-07-11 Murata Mfg Co Ltd 弾性表面波装置およびその製造方法
JP2004254287A (ja) * 2003-01-28 2004-09-09 Fujitsu Media Device Kk 弾性表面波デバイス及びその製造方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4978879A (en) * 1988-07-27 1990-12-18 Fujitsu Limited Acoustic surface wave element
JPH0442604A (ja) 1990-06-08 1992-02-13 Clarion Co Ltd 弾性表面波コンボルバ
US5846708A (en) * 1991-11-19 1998-12-08 Massachusetts Institiute Of Technology Optical and electrical methods and apparatus for molecule detection
JP2740722B2 (ja) 1992-06-29 1998-04-15 松下電器産業株式会社 半導体装置及びその製造方法
JPH0878719A (ja) * 1994-09-01 1996-03-22 Nec Corp 光電変換素子
WO1997045955A1 (de) 1996-05-24 1997-12-04 Siemens Matsushita Components Gmbh & Co. Kg Elektronisches bauelement, insbesondere mit akustischen oberflächenwellen arbeitendes bauelement - ofw-bauelement
JP3514361B2 (ja) * 1998-02-27 2004-03-31 Ｔｄｋ株式会社 チップ素子及びチップ素子の製造方法
KR100280106B1 (ko) * 1998-04-16 2001-03-02 윤종용 트렌치 격리 형성 방법
JP3303788B2 (ja) * 1998-08-31 2002-07-22 日本電気株式会社 半導体集積回路の電極構造の製造方法
JP3376994B2 (ja) * 2000-06-27 2003-02-17 株式会社村田製作所 弾性表面波装置及びその製造方法
JP2002151997A (ja) 2000-11-13 2002-05-24 Mitsubishi Electric Corp 弾性波装置
JP4691787B2 (ja) * 2001-01-15 2011-06-01 パナソニック株式会社 Ｓａｗデバイス
WO2002082644A1 (fr) * 2001-03-30 2002-10-17 Mitsubishi Denki Kabushiki Kaisha Dispositif d'onde acoustique et procede de fabrication correspondant
US20030062969A1 (en) * 2001-09-25 2003-04-03 Tdk Corporation Saw element and saw device
JP4341622B2 (ja) * 2003-06-26 2009-10-07 株式会社村田製作所 弾性表面波装置
JP2005102098A (ja) * 2003-08-29 2005-04-14 Kyocera Corp 高周波モジュール及びそれを用いた無線通信装置
JP4360293B2 (ja) 2004-07-02 2009-11-11 株式会社村田製作所 半田バンプ電極構造
JP2006279609A (ja) * 2005-03-29 2006-10-12 Fujitsu Media Device Kk 弾性境界波素子、共振子およびラダー型フィルタ
KR100672829B1 (ko) * 2005-08-31 2007-01-22 삼성전자주식회사 전하 트랩 절연체의 제조 방법 및 소노스 타입의 비휘발성메모리 장치의 제조방법
JP4585419B2 (ja) * 2005-10-04 2010-11-24 富士通メディアデバイス株式会社 弾性表面波デバイスおよびその製造方法
JP2007110342A (ja) 2005-10-12 2007-04-26 Kyocera Corp 弾性表面波素子及びその製造方法
JP4975377B2 (ja) * 2006-06-06 2012-07-11 太陽誘電株式会社 弾性境界波素子、共振器およびフィルタ

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07254835A (ja) * 1994-03-15 1995-10-03 Murata Mfg Co Ltd 弾性表面波共振子フィルタ
JPH1131759A (ja) * 1997-07-14 1999-02-02 Sony Corp 吸湿保護膜を有する実装回路基板及び実装回路基板の吸湿保護膜形成方法
JP2001044787A (ja) * 1999-07-30 2001-02-16 Kyocera Corp 弾性表面波装置
JP2003101381A (ja) * 2001-09-25 2003-04-04 Tdk Corp 弾性表面波装置
JP2003198321A (ja) * 2001-10-17 2003-07-11 Murata Mfg Co Ltd 弾性表面波装置およびその製造方法
JP2004254287A (ja) * 2003-01-28 2004-09-09 Fujitsu Media Device Kk 弾性表面波デバイス及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011172190A (ja) * 2010-02-22 2011-09-01 Kyocera Corp 弾性波装置及びその製造方法

Also Published As

Publication number Publication date
JP5408512B2 (ja) 2014-02-05
CN101868915B (zh) 2013-11-06
US20100219717A1 (en) 2010-09-02
DE112008003117B4 (de) 2015-11-12
JPWO2009069421A1 (ja) 2011-04-07
JP5158092B2 (ja) 2013-03-06
CN101868915A (zh) 2010-10-20
DE112008003117T5 (de) 2010-09-30
JP2013034230A (ja) 2013-02-14
US8120230B2 (en) 2012-02-21

Similar Documents

Publication Publication Date Title
WO2009069421A1 (ja) 弾性波装置
WO2006051994A3 (en) Light-emitting device
WO2006069376A3 (en) Improved superprimer
WO2007076146A3 (en) Compositions comprising novel copolymers and electronic devices made with such compositions
WO2009006110A3 (en) Photovoltaic devices including cover elements, and photovoltaic systems, arrays, roofs and methods using them
WO2008139742A1 (ja) 粘着シート
TW200716718A (en) Pressure-sensitive adhesive composition
WO2011163416A3 (en) Protective films for dry application to protected surfaces
WO2006061171A3 (de) Optisch variables element mit elektrisch aktiver schicht
WO2005099312A3 (en) Triarylamine compounds for use as charge transport materials
WO2009072226A1 (ja) 可撓性を有する表示装置
WO2009148716A3 (en) Adhesive encapsulating composition and electronic devices made therewith
WO2005060624A3 (en) Hole transport layer compositions and related diode devices
TW200618321A (en) Methods and devices for fabricating and assembling printable semiconductor elements
MY143492A (en) A stretchable form of single crystal silicon for high performance electronics on rubber substrates
WO2009085390A3 (en) Tapes comprising barrier coating compositions and components comprising the same
TW200713467A (en) Semiconductor device﹑CMOS device and P-type semiconductor device
WO2007016115A3 (en) 6,13-bis(thienyl)pentacene compounds
TW200612541A (en) A light-emitting device with a protecting structure
TW200612204A (en) Silicon rich dielectric antireflective coating
WO2009069551A1 (ja) 光電変換素子用電極基板
EP2015325A3 (en) A porous semiconductor film on a substrate
WO2007079103A3 (en) Compositions comprising novel compounds and electronic devices made with such compositions
WO2006081427A3 (en) Apparatus having a photonic crystal
TW200712618A (en) Liquid crystal display device

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880117247.4

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08854093

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2009543728

Country of ref document: JP

RET De translation (de og part 6b)

Ref document number: 112008003117

Country of ref document: DE

Date of ref document: 20100930

Kind code of ref document: P

122 Ep: pct application non-entry in european phase

Ref document number: 08854093

Country of ref document: EP

Kind code of ref document: A1