WO2009044888A1 - 酸化インジウム系ターゲット - Google Patents

酸化インジウム系ターゲット Download PDF

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Publication number
WO2009044888A1
WO2009044888A1 PCT/JP2008/068097 JP2008068097W WO2009044888A1 WO 2009044888 A1 WO2009044888 A1 WO 2009044888A1 JP 2008068097 W JP2008068097 W JP 2008068097W WO 2009044888 A1 WO2009044888 A1 WO 2009044888A1
Authority
WO
WIPO (PCT)
Prior art keywords
indium oxide
oxide target
mole
indium
less
Prior art date
Application number
PCT/JP2008/068097
Other languages
English (en)
French (fr)
Inventor
Seiichiro Takahashi
Norihiko Miyashita
Original Assignee
Mitsui Mining & Smelting Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Mining & Smelting Co., Ltd. filed Critical Mitsui Mining & Smelting Co., Ltd.
Priority to JP2008550296A priority Critical patent/JP5464319B2/ja
Publication of WO2009044888A1 publication Critical patent/WO2009044888A1/ja

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Non-Insulated Conductors (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Conductive Materials (AREA)

Abstract

酸化インジウムと必要に応じて錫を含有すると共に酸素結合エネルギーが１００～３５０ｋＪ／ｍｏｌの範囲にある添加元素（但し、Ｂａ、Ｍｇ、Ｙを除く）をインジウム１モルに対して０．０００１モル以上０．１０モル未満含有する酸化物焼結体を具備する。
PCT/JP2008/068097 2007-10-03 2008-10-03 酸化インジウム系ターゲット WO2009044888A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008550296A JP5464319B2 (ja) 2007-10-03 2008-10-03 酸化インジウム系ターゲット

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-260436 2007-10-03
JP2007260436 2007-10-03

Publications (1)

Publication Number Publication Date
WO2009044888A1 true WO2009044888A1 (ja) 2009-04-09

Family

ID=40526308

Family Applications (6)

Application Number Title Priority Date Filing Date
PCT/JP2008/068101 WO2009044892A1 (ja) 2007-10-03 2008-10-03 酸化インジウム系透明導電膜及びその製造方法
PCT/JP2008/068097 WO2009044888A1 (ja) 2007-10-03 2008-10-03 酸化インジウム系ターゲット
PCT/JP2008/068100 WO2009044891A1 (ja) 2007-10-03 2008-10-03 酸化インジウム系透明導電膜及びその製造方法
PCT/JP2008/068099 WO2009044890A1 (ja) 2007-10-03 2008-10-03 酸化インジウム系ターゲット
PCT/JP2008/068102 WO2009044893A1 (ja) 2007-10-03 2008-10-03 酸化インジウム系透明導電膜及びその製造方法
PCT/JP2008/068098 WO2009044889A1 (ja) 2007-10-03 2008-10-03 酸化インジウム系ターゲット

Family Applications Before (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/068101 WO2009044892A1 (ja) 2007-10-03 2008-10-03 酸化インジウム系透明導電膜及びその製造方法

Family Applications After (4)

Application Number Title Priority Date Filing Date
PCT/JP2008/068100 WO2009044891A1 (ja) 2007-10-03 2008-10-03 酸化インジウム系透明導電膜及びその製造方法
PCT/JP2008/068099 WO2009044890A1 (ja) 2007-10-03 2008-10-03 酸化インジウム系ターゲット
PCT/JP2008/068102 WO2009044893A1 (ja) 2007-10-03 2008-10-03 酸化インジウム系透明導電膜及びその製造方法
PCT/JP2008/068098 WO2009044889A1 (ja) 2007-10-03 2008-10-03 酸化インジウム系ターゲット

Country Status (4)

Country Link
JP (6) JPWO2009044889A1 (ja)
KR (6) KR20100071089A (ja)
TW (6) TW200926208A (ja)
WO (6) WO2009044892A1 (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011037679A (ja) * 2009-08-13 2011-02-24 Tosoh Corp 複合酸化物焼結体、スパッタリングターゲット、複合酸化物非晶質膜及びその製造方法、並びに、複合酸化物結晶質膜及びその製造方法
CN102191465A (zh) * 2010-03-18 2011-09-21 中国科学院福建物质结构研究所 一种铟掺杂氧化锌靶材及透明导电膜的制备方法
WO2012043570A1 (ja) 2010-09-29 2012-04-05 東ソー株式会社 酸化物焼結体及びその製造方法、スパッタリングターゲット、酸化物透明導電膜及びその製造方法、並びに太陽電池
JP2015158014A (ja) * 2009-11-19 2015-09-03 株式会社アルバック 透明導電膜の製造方法、透明導電膜の製造装置、スパッタリングターゲット及び透明導電膜
US9511417B2 (en) 2013-11-26 2016-12-06 General Electric Company Silicon carbide-containing mold and facecoat compositions and methods for casting titanium and titanium aluminide alloys
US9802243B2 (en) 2012-02-29 2017-10-31 General Electric Company Methods for casting titanium and titanium aluminide alloys

Families Citing this family (5)

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Publication number Priority date Publication date Assignee Title
KR101198786B1 (ko) 2010-06-30 2012-11-07 현대자동차주식회사 가변 압축비 장치
JP5367660B2 (ja) * 2010-08-31 2013-12-11 Ｊｘ日鉱日石金属株式会社 酸化物焼結体及び酸化物半導体薄膜
JP5367659B2 (ja) * 2010-08-31 2013-12-11 Ｊｘ日鉱日石金属株式会社 酸化物焼結体及び酸化物半導体薄膜
EP2789595B1 (en) * 2011-12-07 2019-06-19 Tosoh Corporation Complex oxide sintered body, sputtering target, transparent conductive oxide film, and method for producing same
JP5996227B2 (ja) * 2012-03-26 2016-09-21 学校法人 龍谷大学 酸化物膜及びその製造方法

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JP2006318803A (ja) * 2005-05-13 2006-11-24 Sony Corp 透明電極膜及びその製造方法
JP2008038234A (ja) * 2006-08-10 2008-02-21 Idemitsu Kosan Co Ltd 酸化ランタン含有酸化物ターゲット
JP2008174829A (ja) * 2007-01-22 2008-07-31 Samsung Corning Co Ltd Ｉｔｏターゲット、ｉｔｏターゲットの製造方法およびｉｔｏ透明電極
JP2008195554A (ja) * 2007-02-09 2008-08-28 Ulvac Material Kk Ｉｔｏ燒結体、ｉｔｏスパッタリングターゲット及びその製造方法

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JP2003105532A (ja) * 2001-06-26 2003-04-09 Mitsui Mining & Smelting Co Ltd 高抵抗透明導電膜用スパッタリングターゲット及び高抵抗透明導電膜の製造方法
JP2004149883A (ja) * 2002-10-31 2004-05-27 Mitsui Mining & Smelting Co Ltd 高抵抗透明導電膜用スパッタリングターゲット及び高抵抗透明導電膜の製造方法
JP2006318803A (ja) * 2005-05-13 2006-11-24 Sony Corp 透明電極膜及びその製造方法
JP2008038234A (ja) * 2006-08-10 2008-02-21 Idemitsu Kosan Co Ltd 酸化ランタン含有酸化物ターゲット
JP2008174829A (ja) * 2007-01-22 2008-07-31 Samsung Corning Co Ltd Ｉｔｏターゲット、ｉｔｏターゲットの製造方法およびｉｔｏ透明電極
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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011037679A (ja) * 2009-08-13 2011-02-24 Tosoh Corp 複合酸化物焼結体、スパッタリングターゲット、複合酸化物非晶質膜及びその製造方法、並びに、複合酸化物結晶質膜及びその製造方法
JP2015158014A (ja) * 2009-11-19 2015-09-03 株式会社アルバック 透明導電膜の製造方法、透明導電膜の製造装置、スパッタリングターゲット及び透明導電膜
CN102191465A (zh) * 2010-03-18 2011-09-21 中国科学院福建物质结构研究所 一种铟掺杂氧化锌靶材及透明导电膜的制备方法
WO2012043570A1 (ja) 2010-09-29 2012-04-05 東ソー株式会社 酸化物焼結体及びその製造方法、スパッタリングターゲット、酸化物透明導電膜及びその製造方法、並びに太陽電池
US9399815B2 (en) 2010-09-29 2016-07-26 Tosoh Corporation Sintered oxide material, method for manufacturing same, sputtering target, oxide transparent electrically conductive film, method for manufacturing same, and solar cell
US9802243B2 (en) 2012-02-29 2017-10-31 General Electric Company Methods for casting titanium and titanium aluminide alloys
US9511417B2 (en) 2013-11-26 2016-12-06 General Electric Company Silicon carbide-containing mold and facecoat compositions and methods for casting titanium and titanium aluminide alloys

Also Published As

Publication number Publication date
TW200927658A (en) 2009-07-01
KR101200386B1 (ko) 2012-11-12
TWI461365B (zh) 2014-11-21
KR20100071090A (ko) 2010-06-28
WO2009044890A1 (ja) 2009-04-09
JPWO2009044889A1 (ja) 2011-02-10
WO2009044891A1 (ja) 2009-04-09
JPWO2009044892A1 (ja) 2011-02-10
JPWO2009044890A1 (ja) 2011-02-10
JP5464319B2 (ja) 2014-04-09
KR20100063136A (ko) 2010-06-10
KR20100063137A (ko) 2010-06-10
WO2009044889A1 (ja) 2009-04-09
TW200923115A (en) 2009-06-01
TWI430956B (zh) 2014-03-21
TW200927657A (en) 2009-07-01
KR20100067118A (ko) 2010-06-18
TW200926207A (en) 2009-06-16
KR20100063135A (ko) 2010-06-10
JP5237827B2 (ja) 2013-07-17
TW200926208A (en) 2009-06-16
KR20100071089A (ko) 2010-06-28
JPWO2009044888A1 (ja) 2011-02-10
JPWO2009044893A1 (ja) 2011-02-10
TW200926209A (en) 2009-06-16
WO2009044892A1 (ja) 2009-04-09
JPWO2009044891A1 (ja) 2011-02-10
WO2009044893A1 (ja) 2009-04-09

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