WO2009041397A1 - 原料ガスの供給システム及び成膜装置 - Google Patents

原料ガスの供給システム及び成膜装置 Download PDF

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Publication number
WO2009041397A1
WO2009041397A1 PCT/JP2008/067118 JP2008067118W WO2009041397A1 WO 2009041397 A1 WO2009041397 A1 WO 2009041397A1 JP 2008067118 W JP2008067118 W JP 2008067118W WO 2009041397 A1 WO2009041397 A1 WO 2009041397A1
Authority
WO
WIPO (PCT)
Prior art keywords
gas supply
raw gas
supply system
valves
filming apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/067118
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
Masamichi Hara
Atsushi Gomi
Shinji Maekawa
Kaoru Yamamoto
Satoshi Taga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to US12/680,041 priority Critical patent/US20100236480A1/en
Priority to CN200880100433A priority patent/CN101772590A/zh
Publication of WO2009041397A1 publication Critical patent/WO2009041397A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8158—With indicator, register, recorder, alarm or inspection means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8376—Combined

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
PCT/JP2008/067118 2007-09-28 2008-09-22 原料ガスの供給システム及び成膜装置 Ceased WO2009041397A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/680,041 US20100236480A1 (en) 2007-09-28 2008-09-22 Raw material gas supply system and film forming apparatus
CN200880100433A CN101772590A (zh) 2007-09-28 2008-09-22 原料气体的供给系统以及成膜装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-255059 2007-09-28
JP2007255059A JP2009084625A (ja) 2007-09-28 2007-09-28 原料ガスの供給システム及び成膜装置

Publications (1)

Publication Number Publication Date
WO2009041397A1 true WO2009041397A1 (ja) 2009-04-02

Family

ID=40511282

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/067118 Ceased WO2009041397A1 (ja) 2007-09-28 2008-09-22 原料ガスの供給システム及び成膜装置

Country Status (6)

Country Link
US (1) US20100236480A1 (enExample)
JP (1) JP2009084625A (enExample)
KR (1) KR20100063694A (enExample)
CN (1) CN101772590A (enExample)
TW (1) TW200932943A (enExample)
WO (1) WO2009041397A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5281148B2 (ja) * 2009-04-03 2013-09-04 東京エレクトロン株式会社 蒸着ヘッドおよび成膜装置

Families Citing this family (26)

* Cited by examiner, † Cited by third party
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JP5659041B2 (ja) * 2011-02-24 2015-01-28 東京エレクトロン株式会社 成膜方法および記憶媒体
CN103415911B (zh) * 2011-03-03 2016-08-17 松下知识产权经营株式会社 催化化学气相成膜装置、使用该装置的成膜方法和催化剂体的表面处理方法
CN102312222A (zh) * 2011-09-30 2012-01-11 上海宏力半导体制造有限公司 输气装置
JP2013115208A (ja) * 2011-11-28 2013-06-10 Tokyo Electron Ltd 気化原料供給装置、これを備える基板処理装置、及び気化原料供給方法
JP5766647B2 (ja) * 2012-03-28 2015-08-19 東京エレクトロン株式会社 熱処理システム、熱処理方法、及び、プログラム
US20130312663A1 (en) * 2012-05-22 2013-11-28 Applied Microstructures, Inc. Vapor Delivery Apparatus
KR101214051B1 (ko) 2012-08-24 2012-12-20 한국세라믹기술원 전계방출용 ｃｎｔ-금속 혼합막 제조 방법 및 에어로졸 증착장치
JP5837869B2 (ja) * 2012-12-06 2015-12-24 株式会社フジキン 原料気化供給装置
KR101412507B1 (ko) * 2013-02-06 2014-06-26 공주대학교 산학협력단 유기금속화합물 가스 공급 장치
JP2015160963A (ja) * 2014-02-26 2015-09-07 東京エレクトロン株式会社 ルテニウム膜の成膜方法および成膜装置、ならびに半導体装置の製造方法
US9431238B2 (en) * 2014-06-05 2016-08-30 Asm Ip Holding B.V. Reactive curing process for semiconductor substrates
JP6409021B2 (ja) * 2016-05-20 2018-10-17 日本エア・リキード株式会社 昇華ガス供給システムおよび昇華ガス供給方法
KR102344996B1 (ko) * 2017-08-18 2021-12-30 삼성전자주식회사 전구체 공급 유닛, 기판 처리 장치 및 그를 이용한 반도체 소자의 제조방법
JP6425850B1 (ja) * 2017-11-22 2018-11-21 日本エア・リキード株式会社 固体材料容器およびその固体材料容器に固体材料が充填されている固体材料製品
JP7080115B2 (ja) * 2018-06-28 2022-06-03 信越化学工業株式会社 成膜装置及び成膜方法
JP7094172B2 (ja) 2018-07-20 2022-07-01 東京エレクトロン株式会社 成膜装置、原料供給装置及び成膜方法
JP6875336B2 (ja) * 2018-08-27 2021-05-26 信越化学工業株式会社 成膜方法
US11162174B2 (en) * 2018-09-20 2021-11-02 Taiwan Semiconductor Manufacturing Co, Ltd. Liquid delivery and vaporization apparatus and method
JP6887688B2 (ja) * 2019-02-07 2021-06-16 株式会社高純度化学研究所 蒸発原料用容器、及びその蒸発原料用容器を用いた固体気化供給システム
JP6901153B2 (ja) * 2019-02-07 2021-07-14 株式会社高純度化学研究所 薄膜形成用金属ハロゲン化合物の固体気化供給システム。
JP7691439B2 (ja) * 2020-04-30 2025-06-11 ラム リサーチ コーポレーション 化学物質送達システム用のヒーター設計ソリューション
JP7493389B2 (ja) * 2020-06-10 2024-05-31 東京エレクトロン株式会社 成膜装置および成膜方法
JP2022002246A (ja) * 2020-06-19 2022-01-06 東京エレクトロン株式会社 成膜方法およびプラズマ処理装置
KR20230129187A (ko) * 2021-01-15 2023-09-06 어플라이드 머티어리얼스, 인코포레이티드 액화된 재료를 제공하기 위한 장치, 액화된 재료를투입하기 위한 투입 시스템 및 방법
WO2022269659A1 (ja) * 2021-06-21 2022-12-29 株式会社日立ハイテク プラズマ処理装置
TWI877569B (zh) * 2022-04-28 2025-03-21 日商國際電氣股份有限公司 氣體供給系統，基板處理裝置及半導體裝置的製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000226667A (ja) * 1998-11-30 2000-08-15 Anelva Corp Ｃｖｄ装置
WO2004007797A1 (ja) * 2002-07-10 2004-01-22 Tokyo Electron Limited 成膜装置

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JPH09298171A (ja) * 1996-05-08 1997-11-18 Tokyo Electron Ltd 処理ガスの供給方法及びその装置
JPH11125344A (ja) * 1997-10-20 1999-05-11 Ebara Corp 弁装置
US6039809A (en) * 1998-01-27 2000-03-21 Mitsubishi Materials Silicon Corporation Method and apparatus for feeding a gas for epitaxial growth
US6331483B1 (en) * 1998-12-18 2001-12-18 Tokyo Electron Limited Method of film-forming of tungsten
KR100767762B1 (ko) * 2000-01-18 2007-10-17 에이에스엠 저펜 가부시기가이샤 자가 세정을 위한 원격 플라즈마 소스를 구비한 cvd 반도체 공정장치
WO2004111297A1 (ja) * 2003-06-10 2004-12-23 Tokyo Electron Limited 処理ガス供給機構、成膜装置および成膜方法
WO2005060602A2 (en) * 2003-12-12 2005-07-07 Semequip, Inc. Controlling the flow of vapors sublimated from solids
JP2005307233A (ja) * 2004-04-19 2005-11-04 Tokyo Electron Ltd 成膜装置及び成膜方法及びプロセスガスの供給方法
JP4502189B2 (ja) * 2004-06-02 2010-07-14 ルネサスエレクトロニクス株式会社 薄膜の形成方法および半導体装置の製造方法
US7651570B2 (en) * 2005-03-31 2010-01-26 Tokyo Electron Limited Solid precursor vaporization system for use in chemical vapor deposition

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000226667A (ja) * 1998-11-30 2000-08-15 Anelva Corp Ｃｖｄ装置
WO2004007797A1 (ja) * 2002-07-10 2004-01-22 Tokyo Electron Limited 成膜装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5281148B2 (ja) * 2009-04-03 2013-09-04 東京エレクトロン株式会社 蒸着ヘッドおよび成膜装置

Also Published As

Publication number Publication date
JP2009084625A (ja) 2009-04-23
KR20100063694A (ko) 2010-06-11
CN101772590A (zh) 2010-07-07
US20100236480A1 (en) 2010-09-23
TW200932943A (en) 2009-08-01

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