WO2009037878A1 - 半導体装置及びワイヤボンディング方法 - Google Patents

半導体装置及びワイヤボンディング方法 Download PDF

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Publication number
WO2009037878A1
WO2009037878A1 PCT/JP2008/055484 JP2008055484W WO2009037878A1 WO 2009037878 A1 WO2009037878 A1 WO 2009037878A1 JP 2008055484 W JP2008055484 W JP 2008055484W WO 2009037878 A1 WO2009037878 A1 WO 2009037878A1
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Prior art keywords
layer
pressing portion
semiconductor device
wire
wire bonding
Prior art date
Application number
PCT/JP2008/055484
Other languages
English (en)
French (fr)
Inventor
Tatsunari Mii
Hayato Kiuchi
Original Assignee
Shinkawa Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinkawa Ltd. filed Critical Shinkawa Ltd.
Priority to CN2008801082514A priority Critical patent/CN101802993B/zh
Publication of WO2009037878A1 publication Critical patent/WO2009037878A1/ja
Priority to US12/727,812 priority patent/US7821140B2/en

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  • Engineering & Computer Science (AREA)
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  • Wire Bonding (AREA)

Abstract

　半導体装置において、イニシャルボールを第一層半導体ダイ（１１）の第一層パッド（１４）にボンディングして形成されるボールネックを押し潰し、押し潰したボールネック上に折り返したワイヤの側面を押し付けて形成される第一層押し付け部（１００）と、第一層押し付け部（１００）からリード（１６）の方向に向かって伸びる第１ワイヤ（２５）と、第二層半導体ダイ（１２）の第二層パッド（１５）から第一層押し付け部（１００）に向かってルーピングされ、第一層押し付け部（１００）の第二層パッド（１５）側に接合される第２ワイヤ（２５）とを有する。これにより、半導体ダイに与えるダメージを低減しつつ少ないボンディング回数でワイヤの接続を行う。
PCT/JP2008/055484 2007-09-21 2008-03-25 半導体装置及びワイヤボンディング方法 WO2009037878A1 (ja)

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KR20140135319A (ko) * 2013-05-15 2014-11-26 삼성전자주식회사 와이어 본딩 방법 및 이를 이용하여 제조된 반도체 패키지
JP2015173235A (ja) * 2014-03-12 2015-10-01 株式会社東芝 半導体装置及びその製造方法
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