JP2008066331A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP2008066331A
JP2008066331A JP2006239252A JP2006239252A JP2008066331A JP 2008066331 A JP2008066331 A JP 2008066331A JP 2006239252 A JP2006239252 A JP 2006239252A JP 2006239252 A JP2006239252 A JP 2006239252A JP 2008066331 A JP2008066331 A JP 2008066331A
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Prior art keywords
capillary
wire
bump electrode
semiconductor device
pad
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JP2006239252A
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JP2008066331A5 (ja
Inventor
Hideyuki Shinkawa
秀之 新川
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Renesas Technology Corp
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Renesas Technology Corp
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Priority to JP2006239252A priority Critical patent/JP2008066331A/ja
Priority to US11/833,643 priority patent/US20080054052A1/en
Publication of JP2008066331A publication Critical patent/JP2008066331A/ja
Publication of JP2008066331A5 publication Critical patent/JP2008066331A5/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004—Wire welding
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    • B23K20/10—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating making use of vibrations, e.g. ultrasonic welding
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Abstract

【課題】ワイヤを容易にカットすることができ、適切な形状のバンプ電極を得ることができ、キャピラリからワイヤを容易に引き出すことができる半導体装置の製造方法を得る。
【解決手段】本発明に係る半導体装置の製造方法は、キャピラリに通したワイヤにより、パッド上に、一部がキャピラリ内に食い込んだ状態でバンプ電極を形成する工程と、キャピラリを３０μｍ〜４５μｍだけ上昇させる工程と、キャピラリを上昇させた後に、キャピラリを３５μｍ〜５５μｍだけ横方向に移動させてワイヤを細らせる工程と、ワイヤを細らせた後に、キャピラリを上昇させてキャピラリからワイヤを引き出す工程と、キャピラリからワイヤを引き出した後に、クランパでワイヤを挟んで上方向に引っ張ることでワイヤをカットする工程とを有する。
【選択図】図１２

Description

本発明は、キャピラリに通したワイヤによりパッド上にバンプ電極を形成する半導体装置の製造方法に関し、特にバンプ電極からのワイヤのカットを容易にし、適切な形状のバンプ電極を得ることができる半導体装置の製造方法に関するものである。
チップ上のＡｌパッドに直接に金ワイヤをボンディングする場合、キャピラリの荷重が集中してＡｌパッド下のＳｉＯ２層間絶縁膜にクラックが入る。このため、チップツーチップ（chip-to-chip）のワイヤボンディングにはバンプ電極が用いられる。また、薄型パッケージでは、金ワイヤの高さを低くするために、バンプ電極を用いた逆ボンディングが行われる。このバンプ電極は、キャピラリに通したワイヤによりパッド上に形成される（例えば、特許文献１〜３参照）。
特開平５−２３５００２号公報 米国特許第５，０６０，８４３号明細書 特開２０００−１０６３８１号公報
従来は、バンプ電極を形成した後、キャピラリにより金ワイヤを押し潰して肉薄化して、クランパで金ワイヤを挟んで引っ張ることで金ワイヤをカットしていた。しかし、バンプ電極は柔らかいため、金ワイヤの押し潰しが不十分となり、金ワイヤを十分に肉薄化することができなかった。これにより、金ワイヤの強度が高くなるため、金ワイヤをカットした際の反動による金ワイヤのヨレや、バンプ電極のＡｌパッドからの引き剥がしが発生していた。即ち、ワイヤを容易にカットすることができないという問題があった。
また、キャピラリにより金ワイヤを押し潰す際にバンプ電極の上部が凹形状に変形した場合や、金ワイヤをカットした後にバンプ電極にツノが残った場合、逆ボンディングにおけるワイヤのステッチ接合性が不安定となるという問題があった。そして、バンプ電極は、ワイヤボンディングにおいてクッション剤となり、逆ボンディングに用いられるため、ある程度の高さが必要である。さらに、特許文献１の方法では、キャピラリを横方向に移動させることで、ワイヤを細らせ、バンプ電極からのワイヤのカットを容易にしている。しかし、一部がキャピラリ内に食い込んだ状態でバンプ電極を形成する場合は、バンプ電極の一部が削り取られてしまう。即ち、適切な形状のバンプ電極を得ることができないという問題があった。
また、特許文献２の方法では、キャピラリを横方向に移動させる際にワイヤをカットしていた。従って、次のバンプ電極を形成するためのワイヤをキャピラリから引き出すために、複雑な工程が必要であった。即ち、キャピラリからワイヤを容易に引き出すことができないという問題があった。また、特許文献３の方法では、ボンディングの際に、金ボールが塑性変形することによって、キャピラリの貫通孔の内部に入り込んだ状態で、金ワイヤの付け根付近までキャピラリを上昇させてから、水平移動させることによって、ワイヤのネック部分を細らせる工程について開示がある。特許文献３においては、キャピラリの水平移動量について、金ワイヤの直径の３分の２を超える距離だけ移動させると有るが、キャピラリの移動量が不適切な場合、バンプ形状が安定せず、バンプ上にワイヤの一部が残った形状になる場合がある。
本発明は、上述のような課題を解決するためになされたもので、その目的は、ワイヤを容易にカットすることができ、適切な形状のバンプ電極を得ることができ、キャピラリからワイヤを容易に引き出すことができる半導体装置の製造方法を得るものである。
本発明に係る半導体装置の製造方法は、キャピラリに通したワイヤにより、パッド上に、一部がキャピラリ内に食い込んだ状態でバンプ電極を形成する工程と、キャピラリを３０μｍ〜４５μｍだけ上昇させる工程と、キャピラリを上昇させた後に、キャピラリを３５μｍ〜５５μｍだけ横方向に移動させてワイヤを細らせる工程と、ワイヤを細らせた後に、キャピラリを上昇させてキャピラリからワイヤを引き出す工程と、キャピラリからワイヤを引き出した後に、クランパでワイヤを挟んで上方向に引っ張ることでワイヤをカットする工程とを有する。本発明のその他の特徴は以下に明らかにする。
本発明により、ワイヤを容易にカットすることができ、適切な形状のバンプ電極を得ることができ、キャピラリからワイヤを容易に引き出すことができる。
実施の形態１．
図１は、本発明の実施の形態１に係る製造方法により製造される半導体装置の一例を示す断面図であり、図２はその上面図である。ガラスエポキシ配線基板１１上に、チップ１２、スペーサチップ１３、チップ１４、チップ１５が積載されている。また、チップ１２，１４，１５のアルミパッド１６上にはバンプ電極１７が形成されている。そして、金ワイヤ１８が、パッド１９にボールボンディングされ、バンプ電極１７上にステッチボンディングされている。さらに、全体が封止樹脂２０により封止され、ガラスエポキシ配線基板１１の底面に半田ボール２１が形成されている。
以下、本発明の実施の形態１に係る半導体装置の製造方法について説明する。まず、図３に示すように、キャピラリ２２に通した金ワイヤ１８の先端をトーチ（不図示）からの放電により溶融することによって、金ワイヤ１８よりも直径が大きい金ボール２４を形成する。この状態を上方から見ると図４のようになる。ここで、金ワイヤ１８の直径は２５μｍ、金ボール２４の直径は５６μｍである。図４におけるキャピラリの形状は、キャピラリの先端面の投影部分として描かれている。すなわち、内側の円はキャピラリの貫通孔の内壁の位置を示し、本実施の形態においては、その直径は４２μｍである。また、外側の円は、キャピラリの側面との境界部分を指すが、図３もしくは図５に示すとおり、キャピラリの先端面と、側面との境界は、曲面によって構成されている。そこで、チップ１５主面に対して、４５度以下の角度をなす面が、キャピラリの先端面であり、４５度以上の角度をなす面が、キャピラリの側面、もしくは貫通孔内壁であると定義する。本実施の形態においては、キャピラリの先端面の直径は１２５μｍである。
次に、図５に示すように、キャピラリ２２によって、金ボール２４をチップ１５のアルミパッド１６上に押圧し、加重３０ｇ、熱、超音波などを印可することによって、金ボール２４とアルミパッド１６の界面を接合する。この状態を上方から見ると図６のようになる。これにより、アルミパッド１６上に、一部がキャピラリ２２内に食い込んだ状態でバンプ電極１７を形成する。ここで、バンプ電極１７のキャピラリ２２内に食い込んだ部分の高さは３５±５μｍであり、その幅は、キャピラリ貫通孔の内径と同じ４２μｍである。また、バンプ電極１７のキャピラリ２２外にある部分の高さは１０μｍであり、その幅は７０μｍである。そして、キャピラリ２２先端のテーパー部の幅は５６μｍである。
次に、図７に示すように、キャピラリ２２を３０μｍ〜４５μｍだけ上昇させる。これにより、キャピラリ２２の先端が、バンプ電極１７と金ワイヤ１８との境目に対して−５μｍ〜１０μｍの高さにくる。
次に、キャピラリ２２を３５μｍ〜５５μｍ、例えば４５μｍだけ横方向に移動させて金ワイヤ１８を細らせる。ここで、キャピラリ２２を３５μｍだけ横方向に移動させると、図８に示すように、キャピラリ２２の内壁が、キャピラリ２２の内壁とは反対側にある金ワイヤ１８の外壁の位置にくる。この状態を上方から見ると図９のようになる。図９の状態で、金ワイヤ１８とバンプ電極１７との接合部分は、キャピラリ２２先端面の直下に位置する。このように、金ワイヤ１８とバンプ電極１７との接合部分の全面が、平面図上で、キャピラリ２２先端面の直下に位置するように、キャピラリ２２を移動させることにより、金ワイヤ１８の一部を十分に細くすることができ、金ワイヤ１８切断後の、バンプ電極１７の形状を安定させることができる。一方、キャピラリ２２を５５μｍだけ横方向に移動させると、図１０に示すように、キャピラリ２２の内壁と、金ワイヤ１８とバンプ電極１７の接合部分との水平方向の距離が大きくなる。ここで、キャピラリ２２を５５μｍ横方向に移動させた状態では、キャピラリ２２の内壁と、金ワイヤ１８とバンプ電極１７の接合部分との水平距離は、金ワイヤ１８の直径である２５μｍよりも小さくなっている。この状態を上方から見ると図１５のようになる。これらの位置の範囲内でキャピラリ２２を横方向に移動させることで、金ワイヤ１８を切れない程度に細らせることができる。すなわち、キャピラリ２２を横方向に移動させた状態で、キャピラリ２２の内壁と、金ワイヤ１８とバンプ電極１７の接合部分との水平距離が、金ワイヤ１８の直径よりも大きくなると、金ワイヤ１８が切れてしまう場合が発生し、その後のワイヤボンディング工程に悪影響を及ぼす可能性が高くなる。
図１２は、キャピラリの上昇量と横移動量に応じバンプ電極の形状を調べた実験結果を示す図である。この結果から、キャピラリの上昇量が３０μｍ〜４５μｍであり、横移動量が３５μｍ〜５５μｍの場合に、適切な形状のバンプ電極を得ることができることが分かる。即ち、一部がキャピラリ内に食い込んだ状態でバンプ電極を形成する場合でも、バンプ電極にツノが残らず、ある程度の高さを確保して、適切な形状のバンプ電極を得ることができる。
次に、図１３に示すように、金ワイヤ１８とバンプ電極１７が接続された状態で、キャピラリ２２を上昇させることで、キャピラリ２２から金ワイヤ１８を引き出す。これにより、次のバンプ電極を形成するための金ワイヤ１８をキャピラリ２２から容易に引き出すことができる。
次に、図１４に示すように、キャピラリ２２より上の金ワイヤ１８をクランパ２５で挟んで上方向に引っ張ることで、バンプ電極１７の上で金ワイヤ１８をカットする。ここで、上記のようにキャピラリ２２の上昇及び横移動により金ワイヤ１８を細らせているため、金ワイヤ１８を容易にカットすることができる。
次に、図３と同様にキャピラリ２２から排出した金ワイヤ１８の先端に金ボール２４を形成し、図１５に示すように、キャピラリ２２を用いて金ワイヤ１８の先端の金ボール２４をガラスエポキシ配線基板１１のパッド１９にボールボンディングする。その後、金ボール２４から延びる金ワイヤ１８をキャピラリ２２から排出して、バンプ電極１７上まで伸ばし、キャピラリ２２により金ワイヤ１８をバンプ電極１７に１０ｍｓ間押圧し、超音波振動をかけて、金ボール２４から延びる金ワイヤ１８の一部をバンプ電極１７上にステッチボンディングする。
次に、図１６に示すように、クランパ２５で金ワイヤ１８を挟んで上方向に引っ張ることで金ワイヤ１８をカットする。このようにして、キャピラリ２２から排出した金ワイヤ１８によって、バンプ電極１７とガラスエポキシ配線基板１１のパッド１９を電気的に接続する。その後、通常の製造工程を経て、図１６に示す半導体装置を製造する。
実施の形態２．
以下、本発明の実施の形態２に係る半導体装置の製造方法について説明する。本実施の形態では、図１７に示すように、アルミパッド１６はチップ１４のスペーサチップ１３に対するオーバーハング部分に設けられている。この場合、図１８に示すように、バンプ電極１７の形成時のアルミパッド１６に対するキャピラリ２２の荷重３０ｇにより、チップ１４は下方に撓む。
そこで、アルミパッド１６上にバンプ電極１７を形成した後であって、図７に示すようにキャピラリ２２を上昇させる前に、アルミパッド１６に対するキャピラリ２２の荷重をバンプ電極１７の形成時よりも低く、例えば５ｇ以下にする。そして、そのままキャピラリ２２の先端がバンプ電極１７に接した状態で５ｍｓ以上維持する。ここで、図１７に示すように、チップ１４のオーバーハング部分の長さが１．２ｍｍで、チップ１４の厚さが９０μｍの場合、チップ１４のオーバーハング部分の長さがチップ１４の厚さの１０倍以上である。この場合は、上記の状態を最低でも１０ｍｓ以上、好ましくは１６ｍｓ以上維持する。
上記の工程により、下方に撓んでいたチップ１４は上昇して、図１９に示すように、チップ１４の撓みが解消される。その後に、図７に示すように、キャピラリ２２を３０μｍ〜４５μｍだけ上昇させる。その他の工程は実施の形態１と同様である。これにより、チップのオーバーハング部分にバンプ電極を形成する場合でも、実施の形態１と同様に、バンプ電極にツノが残らず、ある程度の高さを確保して、適切な形状のバンプ電極を得ることができる。
本発明の実施の形態１に係る製造方法により製造される半導体装置の一例を示す断面図である。 本発明の実施の形態１に係る製造方法により製造される半導体装置の一例を示す上面図である。 本発明の実施の形態１に係る半導体装置の製造方法を説明するための側面図である。 図３の状態を上方から見た平面図である。 本発明の実施の形態１に係る半導体装置の製造方法を説明するための側面図である。 図５の状態を上方から見た平面図である。 本発明の実施の形態１に係る半導体装置の製造方法を説明するための側面図である。 本発明の実施の形態１に係る半導体装置の製造方法を説明するための側面図である。 図８の状態を上方から見た平面図である。 本発明の実施の形態１に係る半導体装置の製造方法を説明するための側面図である。 図１０の状態を上方から見た平面図である。 キャピラリの上昇量と横移動量に応じバンプ電極の形状を調べた実験結果を示す図である。 本発明の実施の形態１に係る半導体装置の製造方法を説明するための側面図である。 本発明の実施の形態１に係る半導体装置の製造方法を説明するための側面図である。 本発明の実施の形態１に係る半導体装置の製造方法を説明するための側面図である。 本発明の実施の形態１に係る半導体装置の製造方法を説明するための側面図である。 本発明の実施の形態２に係る半導体装置の製造方法を説明するための側面図である。 本発明の実施の形態２に係る半導体装置の製造方法を説明するための側面図である。 本発明の実施の形態２に係る半導体装置の製造方法を説明するための側面図である。
符号の説明
１２，１４，１５ チップ
１６ アルミパッド（パッド）
１７ バンプ電極
１８ 金ワイヤ（ワイヤ）
２２ キャピラリ
２５ クランパ



Claims (5)

  1. キャピラリに通したワイヤにより、パッド上に、一部が前記キャピラリ内に食い込んだ状態でバンプ電極を形成する工程と、
    前記キャピラリを３０μｍ〜４５μｍだけ上昇させる工程と、
    前記キャピラリを上昇させた後に、前記キャピラリを３５μｍ〜５５μｍだけ横方向に移動させて前記ワイヤを細らせる工程と、
    前記ワイヤを細らせた後に、前記キャピラリを上昇させて前記キャピラリから前記ワイヤを引き出す工程と、
    前記キャピラリから前記ワイヤを引き出した後に、クランパで前記ワイヤを挟んで上方向に引っ張ることで前記ワイヤをカットする工程とを有することを特徴とする半導体装置の製造方法。
  2. キャピラリに通したワイヤにより、パッド上に、一部が前記キャピラリ内に食い込んだ状態でバンプ電極を形成する工程と、
    前記バンプ電極と前記ワイヤとの境目に対して−５μｍ〜１０μｍの高さに前記キャピラリの先端がくるように前記キャピラリを上昇させる工程と、
    前記キャピラリを上昇させた後に、前記キャピラリの内壁が、前記キャピラリの内壁とは反対側にある前記ワイヤの外壁の位置と、前記キャピラリの内壁とは反対側にある前記ワイヤの外壁の位置から更に前記ワイヤの直径だけ進んだ位置までの間にくるように前記キャピラリを横方向に移動させて前記ワイヤを細らせる工程と、
    前記ワイヤを細らせた後に、前記キャピラリを上昇させて前記キャピラリから前記ワイヤを引き出す工程と、
    前記ワイヤを引き出した後に、クランパで前記ワイヤを挟んで上方向に引っ張ることで前記ワイヤをカットする工程とを有することを特徴とする半導体装置の製造方法。
  3. 前記パッドはチップのオーバーハング部分に設けられ、
    前記パッド上に前記バンプ電極を形成した後であって、前記キャピラリを上昇させる前に、前記パッドに対する前記キャピラリの荷重を前記バンプ電極の形成時よりも低くし、前記キャピラリの先端が前記バンプ電極に接した状態で５ｍｓ以上維持する工程を更に有することを特徴とする請求項１又は２に記載の半導体装置の製造方法。
  4. 前記パッドはチップのオーバーハング部分に設けられ、
    前記チップのオーバーハング部分の長さは前記チップの厚さの１０倍以上であり、
    前記パッド上に前記バンプ電極を形成した後であって、前記キャピラリを上昇させる前に、前記パッドに対する前記キャピラリの荷重を前記バンプ電極の形成時よりも低くし、前記キャピラリの先端が前記バンプ電極に接した状態で１０ｍｓ以上維持する工程を更に有することを特徴とする請求項１又は２に記載の半導体装置の製造方法。
  5. 前記パッドはチップのオーバーハング部分に設けられ、
    前記チップのオーバーハング部分の長さは前記チップの厚さの１０倍以上であり、
    前記パッド上に前記バンプ電極を形成した後であって、前記キャピラリを上昇させる前に、前記パッドに対する前記キャピラリの荷重を前記バンプ電極の形成時よりも低くし、前記キャピラリの先端が前記バンプ電極に接した状態で１６ｍｓ以上維持する工程を更に有することを特徴とする請求項１又は２に記載の半導体装置の製造方法。

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JP2015142011A (ja) * 2014-01-29 2015-08-03 スタンレー電気株式会社 半導体発光装置およびその製造方法
WO2022269772A1 (ja) * 2021-06-22 2022-12-29 株式会社新川 バンプ形成装置、バンプ形成方法及びバンプ形成プログラム

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