JP5419908B2 - 電力用半導体装置 - Google Patents
電力用半導体装置 Download PDFInfo
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- JP5419908B2 JP5419908B2 JP2011033266A JP2011033266A JP5419908B2 JP 5419908 B2 JP5419908 B2 JP 5419908B2 JP 2011033266 A JP2011033266 A JP 2011033266A JP 2011033266 A JP2011033266 A JP 2011033266A JP 5419908 B2 JP5419908 B2 JP 5419908B2
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- 239000004065 semiconductor Substances 0.000 title claims description 30
- 239000011347 resin Substances 0.000 claims description 38
- 229920005989 resin Polymers 0.000 claims description 38
- 239000000463 material Substances 0.000 claims description 10
- 238000009413 insulation Methods 0.000 description 20
- 238000000034 method Methods 0.000 description 20
- 238000004519 manufacturing process Methods 0.000 description 11
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- 238000007689 inspection Methods 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 238000000465 moulding Methods 0.000 description 6
- 239000000945 filler Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000003825 pressing Methods 0.000 description 4
- 238000005452 bending Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000011179 visual inspection Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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Description
図1は、本発明の実施の形態1にかかる電力用半導体装置100の斜視図であり、図2は、図1をI−I方向に見た場合の断面図である。
図11は、本発明の実施の形態2にかかる電力用半導体装置のIGBT13の上面図であり、図12は、図11をXI−XI方向に見た場合の断面図である。図11、12中、図2と同一符号は同一又は相当箇所を示し、他の構造は図2の電力用半導体装置100と同様である。
Claims (2)
- ワイヤで接続された制御チップとパワーチップがモールド樹脂により封止された電力用半導体装置であって、
該パワーチップは、該ワイヤがウエッジボンディングされた接合部と、該接合部の近傍に設けられたバンプとをその表面上に有し、
該バンプは、隣り合って設けられた第1バンプと第2バンプからなり、
該隣り合って設けられたバンプは、対向する位置にそれぞれ傾斜面を有し、該傾斜面の上方を該ワイヤが通り、
該傾斜面は、該ワイヤのループ方向に対して垂直方向の断面形状が、凹面であることを特徴とする電力用半導体装置。 - 上記バンプと上記ワイヤとが異なる材料からなり、該ワイヤの強度は該バンプの材料の強度より大きいことを特徴とする請求項1に記載の電力用半導体装置。
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