JP2009531869A - はんだ付け可能なループ接触部を有する半導体デバイス - Google Patents

はんだ付け可能なループ接触部を有する半導体デバイス Download PDF

Info

Publication number
JP2009531869A
JP2009531869A JP2009503217A JP2009503217A JP2009531869A JP 2009531869 A JP2009531869 A JP 2009531869A JP 2009503217 A JP2009503217 A JP 2009503217A JP 2009503217 A JP2009503217 A JP 2009503217A JP 2009531869 A JP2009531869 A JP 2009531869A
Authority
JP
Japan
Prior art keywords
solderable
loop
die
wire
bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009503217A
Other languages
English (en)
Inventor
サンド リー
マージー ティー． ロイス
Original Assignee
フェアチャイルド・セミコンダクター・コーポレーション
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by フェアチャイルド・セミコンダクター・コーポレーション filed Critical フェアチャイルド・セミコンダクター・コーポレーション
Publication of JP2009531869A publication Critical patent/JP2009531869A/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L24/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04026—Bonding areas specifically adapted for layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/061—Disposition
    • H01L2224/0618—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H01L2224/06181—On opposite sides of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
    • H01L2224/1133—Manufacturing methods by local deposition of the material of the bump connector in solid form
    • H01L2224/1134—Stud bumping, i.e. using a wire-bonding apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/13124—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13144—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13147—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/1354—Coating
    • H01L2224/13599—Material
    • H01L2224/136—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13647—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/1354—Coating
    • H01L2224/13599—Material
    • H01L2224/136—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13655—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/1354—Coating
    • H01L2224/13599—Material
    • H01L2224/136—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/13664—Palladium [Pd] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/1354—Coating
    • H01L2224/13599—Material
    • H01L2224/136—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/13669—Platinum [Pt] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001—Core members of the connector
    • H01L2224/37099—Material
    • H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001—Core members of the connector
    • H01L2224/37099—Material
    • H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/37138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/37144—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001—Core members of the connector
    • H01L2224/37099—Material
    • H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/37138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/37147—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/3754—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45014—Ribbon connectors, e.g. rectangular cross-section
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45647—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45655—Nickel (Ni) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45664—Palladium (Pd) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45669—Platinum (Pt) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/4813—Connecting within a semiconductor or solid-state body, i.e. fly wire, bridge wire
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4846—Connecting portions with multiple bonds on the same bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/731—Location prior to the connecting process
    • H01L2224/73151—Location prior to the connecting process on different surfaces
    • H01L2224/73153—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/921—Connecting a surface with connectors of different types
    • H01L2224/9212—Sequential connecting processes
    • H01L2224/92142—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92143—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01028—Nickel [Ni]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/162—Disposition
    • H01L2924/16251—Connecting to an item not being a semiconductor or solid-state body, e.g. cap-to-substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)

Abstract

半導体ダイに信頼性のあるはんだ接触部を容易に製造する方法では、当該はんだ接触部は、金属ワイヤ又はリボン状部材から形成されたループの形状に形成され、当該金属ワイヤ又はリボン状部材は別のはんだ付け可能な金属により被覆されていてもよい。ループ部は半導体ダイに、複数のループ、単一のループ、又は複数のループ及び単一のループで形成され得る。ループ接触部は、著音波熱圧着方式ボンディング又は超音波ボンディングを用いてダイに形成されてもよい。ダイは封止材料によりパッケージ化されてもよく、デバイスのためのはんだ準備接触部として封止材料を経て露出したダイを残している。

Description

本発明は半導体デバイスに関し、特に、はんだ付け可能な表面としてループ接触部を有する半導体デバイスに関し、半導体ダイにはんだ付け可能な接触部を形成する安価且つより効率的な方法を提供する。
本発明のデバイスは、より効率的に且つ安価にはんだ付け可能な接触部を形成する方法により形成された半導体デバイスである。当該デバイスは、単純な構造の故に短い製造時間だけを必要とする。
半導体ダイに形成されたバンプ、はんだバンプ、又はスタッドバンプのようなはんだ付け可能な接触部を有する半導体デバイスが当該技術分野において周知である。バンプを有するデバイス（当該バンプは当該デバイスに形成されている）は本発明のデバイスを製造する方法と比較すると、余分な処置・プロセスを必要とする。ダイにバンプを有するデバイスは、ダイにバンプを形成するため、フラックスを封止する（flux encapsulating）ため、はんだバンプを形成するため、及び最後にリフロプロセスのために銅ワイヤを必要とする。
上記の従来のデバイスに付随した問題は製造プロセスが細かく分けられていることである。また、バンプは、ボードの取付の後に、ひび割れを起こしやすいので、はんだ接触部は信頼性がない。
より効率的且つより複雑でない半導体デバイスを製造する方法が望まれている。
半導体デバイスをボード取付部にはんだ付けするため又は取り付けるための信頼性のある接触部を設けることが望まれている。
本発明の実施例においては、半導体デバイスは、半導体ダイと、ダイのドレイン領域に取り付けられるダイ取付パッドと、ダイのソース領域及びゲート領域に取り付けられるはんだ付け可能なループ接触部とを含んでいる。ループ接触部は、はんだ付け可能な金属ワイヤ又はリボン状部材（リボン）から形成され、当該はんだ付け可能な金属ワイヤ又はリボン状部材は、別のはんだ付け可能な金属により被覆されていてもよい。ループ接触部をダイにボンディングする方法は超音波熱圧着方式ボンディングか超音波方式ボンディングである。
より詳しくは、本発明は、第１実施例において、ループ接触部を有する半導体デバイスを含み、当該ループ接触部は、単一の接触部、複数の接触部、又は単一の接触部及び複数の接触部の両方に超音波熱圧着方式で接合されている。ループ接触部は、金又は銅のようなはんだ付け可能な金属ワイヤから形成され、さらに、当該ワイヤは、銅、ニッケル、パラジウム、又はプラチナにより被覆されていてもよい。当該デバイスは封止材料によりパッケージ化されてもよく、はんだを用いてアプリケーションボードに取り付けられてもよい。
第２実施例において、ボンディング部分（箇所）はダイに形成されたスタッドバンプである。ダイへボンディングすることとは異なり、ループ接触部をスタッドバンプにボンディングすることは、超音波熱圧着方式ボンディングプロセスのために必要とされる熱による半導体ダイへの損傷を直接防止する。ループ接触部が形成されると、上記デバイスは封止材料を用いて封止され、ループ接触部を当該封止材料を経て露出させたままである。金属ワイヤは銅又は金であり、さらに、当該金属ワイヤは、銅、ニッケル、パラジウム、又はプラチナにより被覆されていてもよい。
第３実施例において、上記デバイスは金属ワイヤ又は金属リボン状部材から形成されたループ接触部を有している。ワイヤ又はリボン状部材は、銅、アルミニウム、又は金のようなはんだ付け可能な金属から形成され、当該ワイヤ又はリボン状部材は、銅、ニッケル、パラジウム、及びプラチナにより被覆されていてもよい。ワイヤ又はリボン状部材は超音波方式ボンディング技法により、ダイに直接接合される。また、ダイは封止材料を用いてパッケージ化されてもよい。
本発明の利点はデバイスを効率的な製造プロセスにより形成できることである。これは、フォトレジスト分配ステップ、現像ステップ、金属メッキステップ、バンプを形成するステップ、及びリフロステップを必要とすることを解消する。ダイがダイ取付パッドに取り付けられた後、ワイヤ又はリボン状部材は中間ステップを必要とせずにダイに直接接合される。以下において詳しく説明するように、超音波熱圧着方式ボンディングプロセスはボンディングツールにワイヤの挿入を必要とし、当該ワイヤは加熱され、その後ダイに取り付けられる。その後、別の接合部が、ボンディングツール内のワイヤをダイに取り付け、ダイすなわち接合面にウェッジ接合部を形成することにより形成されることができる。スタッドバンプ又ははんだバンプを形成する製造プロセスにおけるリフロプロセスのようなループ接触部製造プロセスに少なくとも関係するような更なるステップは必要とされない。
本発明の別の利点は、ループ接触部が耐久性があり且つ信頼性のあるはんだ接触部であることである。スタッドボール又はバンプを有するデバイスのような従来のデバイスはひび割れを起こしやすい。本発明のループ接触部は堅い（中実）金属ワイヤ又はリボン状部材から形成される。これら堅い金属ワイヤ又はリボン状部材は、はんだバンプ又はスタッドバンプよりも強度があり、ループ接触部は、スタッドバンプを有するデバイスと同じようにボードを取り付けた後に容易にはひびが入らない。
一致する参照符号は、幾つかの図面において一致する部分を示す。本明細書において示した例は本発明の一部の実施例であり、いかなるようにも本発明の範囲を限定するとして解釈されるべきではない。
発明を実施するための形態
図１は、半導体デバイス１００の本発明の第１実施例を示している。当該デバイスは、はんだ付け可能な材料から形成されたループ接触部１０４、１０８、１０９を有するパッケージ化された半導体１００であり、当該ループ接触部は半導体ダイ１０２に接合されている。半導体ダイ１０２は、ゲート領域、ソース領域、及びドレイン領域を有するフリップチップである。ソース領域及びゲート領域は半導体ダイ１０２の上面にあり、ドレイン領域は半導体ダイ１０２の底面にある。ドレイン領域はダイ取付パッド１０１に取り付けられ、ダイ取付パッドとドレイン接触部を形成する。半導体ダイ１０２のソース領域及びゲート領域はループ接触部１０４、１０８、１０９を有している。デバイス１００はマルチループの接触部１０４と単一のループ端子接触部１０８、１０９とを示している。ループ接触部は、さらに以下において説明される超音波熱圧着方式ボールボンディング方法を用いて半導体ダイ１０２に接合される。
図１及び図１ａを参照すると、デバイス１００はワイヤから形成される複数のループ端子接触部を有していてもよく、単一の線のワイヤが、はんだ面を形成するために半導体ダイ１０２に複数のループ部を形成するのに使用される。この実施例においては、ワイヤはマルチループの接触部１０４と単一ループの接触部１０８、１０９とを形成するのに使用される。
超音波熱圧着方式ボンディングプロセスは、接合部分において球状部を形成し、ボール接合部１０６を形成する。通常、ループ接触部に使用されるワイヤは中空のキャピラリに通される。電子フレームオフシステム（electronic-flame-off system）は、ワイヤが通るキャピラリの下においてワイヤを溶かす。上述したように、このワイヤは球状に固められ、ボール接合部を形成する。キャピラリの下において溶かされたワイヤは接合部が形成される材料に十分な力でプレスされ、塑性変形及び原子相互拡散を可能にする。超音波熱圧着方式ボールボンディングプロセスは１００℃から２８０℃の間の温度範囲を使用し、熱は、ワイヤが接合されるべきデバイスが取り付けられる台座に与えられる。銅ワイヤを使用するときには、銅が酸化し易いので、ボンディングプロセスは、不活性の雰囲気において行われ、酸化を防止しなければならない。
第１接合部が形成された後、キャピラリは、ワイヤが第２接合部分（箇所）にプレスされ、超音波エネルギを加えると共に加熱されるまで開放されて持ち上げられ、塑性変形及び原子相互拡散を引き起こす。第２接合部は、ワイヤが送られるキャピラリデバイスの形状の故に、くさび（ウェッジ）形状である。このプロセスは必要な数のループ接触部を形成する前に行われてもよい。最後のループ接触部において、ワイヤクランプは閉ざされ、キャピラリは最後のウェッジ接合部の真上でワイヤを切断する。
図１及び図１ａを参照すると、半導体デバイス１００は３つのループ接触部１０４を有し、当該３つのループ接触部１０４は、ボール接合部１０６と２つのウェッジ接合部１０７とを有し、当該２つのウェッジ接合部１０７は３つのループ接触部１０４同士の間にある。これらマルチループの接触部１０４は半導体ダイ１０２のソース領域に形成され、ソース接触部を形成する。アプリケーションボード１１４が、はんだ１１０によりループ接触部１０４、１０８、１０９に取り付けられ、半導体ダイ１０２は、ダイ取付材料１１１によりダイ取付パッドにダイボンディングされる。さらに、この第１実施例は、アプリケーションボード１１４を取り付ける前に、封止材料１１２によりデバイスを封止することによりパッケージ化されてもよい。
図１及び図１ｂによれば、図１ｂは図１のデバイス１００の単一ループの接触部１０８、１０９の断面図を示している。単一ループの接触部１０８は半導体ダイ１０２のソース領域に形成され、ソースループ接触部１０８となる。図１及び図１ｂの中央の単一ループの接触部１０９はダイ１０２のゲート領域に形成されたゲートループ接触部１０９である。
ループ接触部１０４、１０８、１０９は、金ワイヤ、銅ワイヤ、又は別の適切な材料のワイヤから形成されてもよい。さらに、当該ワイヤは、ニッケル、パラジウム、銅、プラチナ、又は別のはんだ付け可能な金属により被覆されていてもよい。
図２及び図２ａに示した第２実施例を参照すると、図２の半導体デバイス２００は、半導体ダイ２０２のスタッドバンプ２１４、２１５に形成されたはんだ付け可能なループ接触部２０４、２０８、２０９を有している。半導体ダイ２０２は、ダイ２０２の底面にドレイン領域を有し、上面にソース領域及びゲート領域を有している。図２ａを参照すると、半導体ダイ２０２のドレイン領域はダイ取付パッド２０１に取り付けられ、ループ接触部２０４、２０８がスタッドバンプ２１４、２１５に設けられている。ループ接触部２０４、２０８、２０９は、上述したようなプロセスと同様の超音波熱圧着方式ボンディングにより形成される。なお、半導体ダイ２０２はスタッドバンプ２１４、２１５を有している。スタッドバンプは、ボンディングプロセスの間に、半導体ダイ２０２を保護するのに使用される。上述したように、超音波熱圧着方式ボディングプロセスは、ワイヤ及び当該ワイヤが接合される材料の塑性変形及び原子的な金属間結合（atomic intermetallization）を引き起こすのに熱を必要とする。半導体ダイに熱を直接加えることはダイに損傷を与えるかもしれない。よって、ワイヤをダイ２０２のスタッドバンプ２１４、２１５に接合することは、ダイ２０２への損傷を防止することができるか、最小化することができる。
図２は、超音波熱圧着方式ボールボンディング技法を用いてワイヤを接合し、ループ接触部２０４、２０８，２０９を形成することにより、マルチループの接触部２０４及び単一ループの接触部２０８、２０９を有する半導体デバイス２００を示している。マルチループの接触部２０４及び単一ループの接触部２０８はダイ２０２のソースバンプ２１４に形成され、中央の単一ループの接触部２０９は半導体ダイ２０２のゲートバンプ２１５に形成される。ループ端子接触部２０４、２０８、２０９を形成するのに使用されるワイヤは、銅、金、又は別の適切な材料の金属ワイヤであってもよく、さらに、銅、ニッケル、パラジウム、又はプラチナのようなはんだ付け可能な金属により被覆されていてもよい。
図２ａは、太線で示したソーススタッドバンプ２１４を有するマルチループの接触部２０４の断面図である。しかし、マルチループの接触部２０４は半導体ダイ２０２に１つの接合部２０６を直接取り付けられている。超音波熱圧着方式ボールボンディングプロセスにおいて説明したような最初のボール接合部２０６が半導体ダイ２０２に直接形成される。また、半導体デバイス２０２は、ループ接触部２０４、２０８、２０９を封止材料を経て露出させたままでパッケージ化されてもよい。露出したループ接触部２０４、２０８、２０９はゲート接続部及びソース接続部として使用される。
図３、図３ａ、及び図３ｂを参照すると、本発明の第３実施例は、リボン状部材（リボン）から形成されたループ接触部３０４、３０８、３０９を有する半導体デバイス３００を示している。なお、ワイヤがリボン状部材の代わりに使用されてもよい。さらに、リボン状部材は、超音波方式ウェッジボンディング（ultrasonic wedge bonding）技法を用いて半導体ダイ３０２に直接接合される。半導体ダイ３０２はドレイン領域を一方の表面に有し、反対側の表面にソース領域及びゲート領域を有している（収容している）。ダイ３０２のドレイン領域は、はんだ３１０によりダイ取付パッド３０１に取り付けられる。デバイス３００は、ダイ３０２に直接接合された単一ループの接触部３０８、３０９とマルチループの接触部３０４とを有している。
図３ａは、図３におけるデバイス３００のマルチループの接触部の断面図である。マルチループの接触部３０４は、超音波方式ボンディング方法を用いてダイ３０２に直接接合されている。超音波方式ボンディングは、所定の角度でリボン状部材又はワイヤをボンディングツールに送ることによりウェッジ接合部３０６を形成する。ワイヤは半導体ダイ３０２に保持され、超音波エネルギが、ワイヤとダイ３０２との間に接合部３０６を形成するために加えられる。このプロセスは、超音波熱圧着方式ボールボンディングプロセスに用いられる高い温度を必要としない。すなわち超音波方式ボンディングは約２５℃を必要とする。当該プロセスは、所望の数のループ接触部を形成するために繰り返される。ワイヤは、ボンディングツールと共に取り付けられたワイヤカッタにより切断されるか、クランプにより切断される。クランプにより切断される場合には、クランプを所定の位置に維持し、ボンディングツールを上昇させ、ボンディングツールが上昇される間に、ワイヤを引きちぎることにより、ワイヤが切断される。
図３ａは、半導体ダイ３０２に接合されたマルチループの接触部３０４を示し、デバイス３００はループ接触部３０４を封止材料３１２から露出させたまま封止されている。
図３ｂは、ソース領域及びゲート領域において半導体ダイ３０２に接合されて、単一のソースループ接触部３０８及び単一のゲートループ接触部３０９を形成する単一ループの接触部３０８、３０９の断面図である。また、デバイス３００は、別の表面にはんだ付けするために、露出したループ接触部３０８、３０９の部分を残して半導体ダイ３０２を覆う封止材料３１２によりパッケージ化される。図３はリボン状部材ループ接触部３０４、３０８、３０９を示しているが、上述したように、ワイヤが、この実施例におけるリボン状部材の代わりに用いられてもよい。ワイヤ若しくはリボン状部材は、アルミニウム、銅、若しくは金のような適切なはんだ付け可能な金属であってもよく、さらに銅、ニッケル、パラジウム、若しくはプラチナにより被覆されていてもよい。
上記デバイスを製造する方法は、バンプ若しくはボール部を有する従来の半導体デバイス、又ははんだ付け可能な金属被覆部を有する半導体デバイスに優る顕著な利点を生ずる。第１実施例によれば、当該製造方法は半導体ダイのドレイン領域をダイ取付パッドに取り付けるステップを必要とする。その後、ワイヤが、上述したような超音波熱圧着方式ボールボンディング技法を用いて、半導体ダイのソース領域に接合される。ワイヤボンディングプロセスが、ダイに単一ループの接触部又はマルチループの接触部を形成するのに使用され得る。第１実施例に示したように、半導体ダイには単一ループの接触部及びマルチループの接触部が存在する。ループ端子接触部のための材料は、はんだ付け可能な金属であってもよく、当該はんだ付け可能な金属は別のはんだ付け可能な金属により被覆されていてもよい。例えば、ワイヤは銅又は金であってもよく、銅、ニッケル、パラジウム、又はプラチナにより被覆されていてもよい。ループ接触部がダイに接合された後、ダイは、封止材料により覆われてもよく、ループ接触部を封止材料を経て露出した状態で残すように覆われている。その後、ループ接触部ははんだによりアプリケーションボードに取り付けられる。
第２実施例のデバイスを製造する方法は、スタッドバンプ若しくはボール部を有する半導体ダイを使用する必要があり、当該スタッドバンプ若しくはボール部には、最初のボール接合部が半導体ダイに形成された後に、ステッチ接合部若しくはウェッジ接合部が形成される。ダイのドレイン領域はダイ取付パッドに取り付けられる。その後、超音波熱圧着方式ボンディング技法を使用することにより、ワイヤは半導体ダイにボール形状で接合され、別の接合部が半導体ダイのスタッドバンプ上に形成される。また、この実施例において使用されるワイヤは銅又は金のようなはんだ付け可能な金属ワイヤであり、当該ワイヤは、銅、ニッケル、パラジウム、若しくはプラチナのようなはんだ付け可能な金属により被覆されていてもよい。その後、半導体デバイスは、適切な封止材料を用いて封止され、ループ接触部を当該材料を経て露出させるように封止されてもよい。
第３実施例によれば、半導体デバイスは、第１実施例のように、半導体ダイに接合されたはんだ付け可能なループ接触部を有している。しかし、ダイはダイ取付パッドにまず取り付けられる。その後、ループ接触部が超音波方式ボンディング技法を用いてダイに形成される。この実施例におけるループ接触部は、銅、金、又はアルミニウムのようなはんだ付け可能な金属から形成されたワイヤ又はリボン状部材により形成されてもよい。また、ワイヤ又はリボン状部材は、銅、ニッケル、パラジウム、又はプラチナのような別のはんだ付け可能な金属により被覆されていてもよい。リボン状部材又はワイヤは超音波エネルギを用いることによりダイに直接接合され、ウェッジ接合部を形成する。ループ接合部は、ダイに単一のループ、複数のループ、又は単一のループと複数のループとを組み合わせた形状で形成されてもよい。第３実施例は、ダイのソース領域にマルチループの接触部と単一ループの接触部とを有し、単一のゲートループ接触部を有している。当該デバイスは封止材料により、ループ接触部を当該封止材料を経て露出させるように封止されてもよい。
本発明はＭＯＳＦＥＴデバイスの実施例と共に説明されたが、本発明は、ダイオード、ＩＧＢＴ、サイリスタ、及びバイポーラ接合トランジスタのような別の半導体ダイと共に使用されてもよいことは当業者により理解されるであろう。
本発明は好ましい実施例を参照して説明されたが、様々な変更・変形がなされてもよく、均等物が本発明の範囲から離れることなく特定の状況に合うように本発明の要素の代わりに用いられてもよいことが、当業者により理解されるであろう。よって、本発明は、本発明を実施するための最良の形態として説明した特定の実施例に限定されず、添付した特許請求の範囲の範囲及び精神内の全ての実施例を含むことを意図している。
本発明の第１実施例による半導体デバイスの平面図である。 図１における１ａ−１ａ線に沿った断面図である。 図１における１ｂ−１ｂ線に沿った断面図である。 本発明の第２実施例による半導体デバイスの平面図である。 図２における２ａ−２ａ線に沿った断面図である。 本発明の第３実施例による半導体デバイスの平面図である。 図３における３ａ−３ａ線に沿った断面図である。 図３における３ｂ−３ｂ線に沿った断面図である。

Claims (24)

  1. 半導体デバイスであって、
    ａ）１つ以上の端子を有する第１表面及び少なくとも１つの端子を有する第２表面を備えた半導体ダイと、
    ｂ）リード線を有するダイ取付パッドと、
    ｃ）少なくとも１つのはんだ付け可能なループ接触部と、
    を含み、前記少なくとも１つのはんだ付け可能なループ接触部は前記半導体ダイの前記第１表面における前記端子の１つに接触されることを特徴とする半導体デバイス。
  2. 前記はんだ付け可能なループ接触部は金属ワイヤから形成されることを特徴とする請求項１に記載のデバイス。
  3. 前記ワイヤは、銅、アルミニウム、及び金からなる群から選択される金属であることを特徴とする請求項２に記載のデバイス。
  4. 前記ワイヤははんだ付け可能な材料により被覆されていることを特徴とする請求項３に記載のデバイス。
  5. 前記はんだ付け可能な材料は、銅、ニッケル、パラジウム、及びプラチナからなる群から選択される金属であることを特徴とする請求項４に記載のデバイス。
  6. 前記デバイスはアプリケーションボードをさらに含むことを特徴とする請求項５に記載のデバイス。
  7. 前記はんだ付け可能なループ接触部は超音波熱圧着方式ボールボンディングにより形成されることを特徴とする請求項３に記載のデバイス。
  8. 前記はんだ付け可能なループ接触部は超音波方式ウェッジボンディングにより形成されることを特徴とする請求項３に記載のデバイス。
  9. 前記はんだ付け可能なループ接触部は超音波熱圧着方式ボールボンディングにより形成されることを特徴とする請求項４に記載のデバイス。
  10. 前記はんだ付け可能なループ接触部は超音波方式ウェッジボンディングにより形成されることを特徴とする請求項４に記載のデバイス。
  11. 前記はんだ付け可能なループ接触部はリボン状部材から形成されることを特徴とする請求項１に記載のデバイス。
  12. 前記リボン状部材は、銅、アルミニウム、及び金からなる群から選択される金属であることを特徴とする請求項１１に記載のデバイス。
  13. 前記リボン状部材ははんだ付け可能な材料により被覆されていることを特徴とする請求項１２に記載のデバイス。
  14. 前記はんだ付け可能な材料は、銅、ニッケル、パラジウム、及びプラチナからなる群から選択される金属であることを特徴とする請求項１３に記載のデバイス。
  15. 前記はんだ付け可能なループ接触部は超音波方式ボンディングにより形成されることを特徴とする請求項１４に記載のデバイス。
  16. 前記デバイスは、パッケージ化材料をさらに含んでいることを特徴とする請求項１に記載のデバイス。
  17. 前記半導体ダイは、ダイオード、ＭＯＳＦＥＴ、ＩＧＢＴ、サイリスタ、及びバイポーラ接合トランジスタからなる群の１つであることを特徴とする請求項１に記載のデバイス。
  18. ループ端子接触部を有する半導体デバイスを製造する方法であって、
    ａ）半導体ダイ、リード線を有するダイ取付パッド、及びワイヤ若しくはリボン状部材の形態のはんだ付け可能なループ接触材料を設けるステップと、
    ｂ）前記ダイを前記ダイ取付パッドに取り付けるステップと、
    ｃ）前記ダイに前記ループ端子接触材料をループ状にボンディングするステップと、
    を含むことを特徴とする方法。
  19. 前記ボンディングするステップは超音波熱圧着方式ボンディングであり、前記ループ接触部ははんだ付け可能なループ接触材料であり、前記はんだ付け可能なループ接触材料は、銅、金、及びアルミニウムの群から選択される金属ワイヤであることを特徴とする請求項１８に記載の方法。
  20. 前記ワイヤは、銅、ニッケル、パラジウム、及びプラチナからなる群から選択されるはんだ付け可能な金属により被覆されていることを特徴とする請求項１９に記載の方法。
  21. 前記超音波熱圧着方式ボンディングは、複数のステッチの形でボール部上の接合ステッチ（a bond stitch over ball under multi stitch）からなることを特徴とする請求項２０に記載の方法。
  22. 前記ボンディングするステップは超音波方式ボンディングであり、前記ループ端子接触部は、アルミニウム、銅、及び金からなる群から選択される金属ワイヤ又は金属リボン状部材であることを特徴とする請求項１８に記載の方法。
  23. 前記ワイヤ又はリボン状部材は、銅、ニッケル、パラジウム、及びプラチナからなる群から選択されるはんだ付け可能な金属により被覆されていることを特徴とする請求項２２に記載の方法。
  24. 前記半導体ダイは、ダイオード、ＭＯＳＦＥＴ、ＩＧＢＴ、サイリスタ、及びバイポーラ接合トランジスタからなる群の１つであることを特徴とする請求項１８に記載のデバイス。
JP2009503217A 2006-03-27 2007-03-27 はんだ付け可能なループ接触部を有する半導体デバイス Pending JP2009531869A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US78613906P 2006-03-27 2006-03-27
US11/690,900 US20070222087A1 (en) 2006-03-27 2007-03-26 Semiconductor device with solderable loop contacts
PCT/US2007/065025 WO2007112393A2 (en) 2006-03-27 2007-03-27 Semiconductor device with solderable loop contacts

Publications (1)

Publication Number Publication Date
JP2009531869A true JP2009531869A (ja) 2009-09-03

Family

ID=38532512

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009503217A Pending JP2009531869A (ja) 2006-03-27 2007-03-27 はんだ付け可能なループ接触部を有する半導体デバイス

Country Status (6)

Country Link
US (1) US20070222087A1 (ja)
JP (1) JP2009531869A (ja)
KR (1) KR20090003251A (ja)
DE (1) DE112007000781T5 (ja)
TW (1) TW200805532A (ja)
WO (1) WO2007112393A2 (ja)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2133915A1 (de) * 2008-06-09 2009-12-16 Micronas GmbH Halbleiteranordnung mit besonders gestalteten Bondleitungen und Verfahren zum Herstellen einer solchen Anordnung
KR101099233B1 (ko) * 2008-07-11 2011-12-27 가부시키가이샤 닛데쓰 마이크로 메탈 본딩 와이어의 접합 구조
US8022558B2 (en) * 2009-02-13 2011-09-20 Infineon Technologies Ag Semiconductor package with ribbon with metal layers
US8129220B2 (en) 2009-08-24 2012-03-06 Hong Kong Polytechnic University Method and system for bonding electrical devices using an electrically conductive adhesive
US10734320B2 (en) 2018-07-30 2020-08-04 Infineon Technologies Austria Ag Power metallization structure for semiconductor devices
US9728493B2 (en) * 2015-08-28 2017-08-08 Infineon Technologies Ag Mold PackageD semiconductor chip mounted on a leadframe and method of manufacturing the same
DE102016122318A1 (de) 2016-11-21 2018-05-24 Infineon Technologies Ag Anschlussstruktur eines Leistungshalbleiterbauelements
US10304782B2 (en) 2017-08-25 2019-05-28 Infineon Technologies Ag Compressive interlayer having a defined crack-stop edge extension
US11127693B2 (en) 2017-08-25 2021-09-21 Infineon Technologies Ag Barrier for power metallization in semiconductor devices
RU2671383C1 (ru) * 2017-12-20 2018-10-30 Акционерное общество "Научно-исследовательский институт электронной техники" Способ формирования шариковых выводов на алюминиевой металлизации контактных площадок кристалла
US11031321B2 (en) 2019-03-15 2021-06-08 Infineon Technologies Ag Semiconductor device having a die pad with a dam-like configuration
US11887962B2 (en) 2020-06-16 2024-01-30 Intel Corporation Microelectronic structures including bridges
US11923307B2 (en) 2020-06-16 2024-03-05 Intel Corporation Microelectronic structures including bridges
US11804441B2 (en) 2020-06-16 2023-10-31 Intel Corporation Microelectronic structures including bridges
US11791274B2 (en) * 2020-06-16 2023-10-17 Intel Corporation Multichip semiconductor package including a bridge die disposed in a cavity having non-planar interconnects
US11373972B2 (en) 2020-06-16 2022-06-28 Intel Corporation Microelectronic structures including bridges
EP4084063A1 (en) * 2021-04-30 2022-11-02 Infineon Technologies Austria AG Semiconductor module with bond wire loop exposed from a moulded body and method for fabricating the same
US20230197585A1 (en) 2021-12-20 2023-06-22 Infineon Technologies Ag Semiconductor package interconnect and power connection by metallized structures on package body

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5476211A (en) * 1993-11-16 1995-12-19 Form Factor, Inc. Method of manufacturing electrical contacts, using a sacrificial member
US5014111A (en) * 1987-12-08 1991-05-07 Matsushita Electric Industrial Co., Ltd. Electrical contact bump and a package provided with the same
US5299939A (en) * 1992-03-05 1994-04-05 International Business Machines Corporation Spring array connector
US6001724A (en) * 1996-01-29 1999-12-14 Micron Technology, Inc. Method for forming bumps on a semiconductor die using applied voltage pulses to an aluminum wire
US6313523B1 (en) * 1999-10-28 2001-11-06 Hewlett-Packard Company IC die power connection using canted coil spring
US6624522B2 (en) * 2000-04-04 2003-09-23 International Rectifier Corporation Chip scale surface mounted device and process of manufacture
US6522018B1 (en) * 2000-05-16 2003-02-18 Micron Technology, Inc. Ball grid array chip packages having improved testing and stacking characteristics
US6653170B1 (en) * 2001-02-06 2003-11-25 Charles W. C. Lin Semiconductor chip assembly with elongated wire ball bonded to chip and electrolessly plated to support circuit
US6856007B2 (en) * 2001-08-28 2005-02-15 Tessera, Inc. High-frequency chip packages
US7032311B2 (en) * 2002-06-25 2006-04-25 Eli Razon Stabilized wire bonded electrical connections and method of making same
KR100604334B1 (ko) * 2003-11-25 2006-08-08 (주)케이나인 플립칩 패키징 공정에서 접합력이 향상된 플립칩 접합 방법
US20050133928A1 (en) * 2003-12-19 2005-06-23 Howard Gregory E. Wire loop grid array package
US7557432B2 (en) * 2005-03-30 2009-07-07 Stats Chippac Ltd. Thermally enhanced power semiconductor package system

Also Published As

Publication number Publication date
WO2007112393A2 (en) 2007-10-04
TW200805532A (en) 2008-01-16
WO2007112393A3 (en) 2008-10-09
US20070222087A1 (en) 2007-09-27
DE112007000781T5 (de) 2009-01-29
KR20090003251A (ko) 2009-01-09

Similar Documents

Publication Publication Date Title
JP2009531869A (ja) はんだ付け可能なループ接触部を有する半導体デバイス
US5976964A (en) Method of improving interconnect of semiconductor device by utilizing a flattened ball bond
US20050130350A1 (en) Flip clip attach and copper clip attach on MOSFET device
US20050042855A1 (en) Wire bonding for thin semiconductor package
US20090189261A1 (en) Ultra-Thin Semiconductor Package
US20080265385A1 (en) Semiconductor package using copper wires and wire bonding method for the same
JPH07321252A (ja) 樹脂封止型半導体装置
US9685351B2 (en) Wire bond mold lock method and structure
US9824959B2 (en) Structure and method for stabilizing leads in wire-bonded semiconductor devices
US6054772A (en) Chip sized package
US20110037153A1 (en) High bond line thickness for semiconductor devices
TW201505145A (zh) 半導體裝置及其製造方法
TWI573235B (zh) 半導體裝置及其製造方法
US6489180B1 (en) Flip-chip packaging process utilizing no-flow underfill technique
US11417625B2 (en) Semiconductor device having an electrical connection between semiconductor chips established by wire bonding, and method for manufacturing the same
US6768212B2 (en) Semiconductor packages and methods for manufacturing such semiconductor packages
JPS62281435A (ja) 半導体装置
US20220005778A1 (en) Semiconductor device with a heterogeneous solder joint and method for fabricating the same
US8378468B2 (en) Semiconductor device and method of manufacturing the same
WO2006090196A1 (en) Rectangular bond pad and method of wire bonding the same with an elongated ball bond
JPS62150836A (ja) 半導体装置
US11515275B2 (en) Copper wire bond on gold bump on semiconductor die bond pad
TWI552295B (zh) 半導體元件中的銅線鍵接結構及其製造方法
JPS60105241A (ja) 半導体素子用パツケ−ジ
JP2009530872A (ja) 細いアルミニウムワイヤのためのアルミニウムバンプボンディング