WO2008143301A1 - パターン形成方法及びそれに用いる樹脂組成物 - Google Patents

パターン形成方法及びそれに用いる樹脂組成物 Download PDF

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Publication number
WO2008143301A1
WO2008143301A1 PCT/JP2008/059386 JP2008059386W WO2008143301A1 WO 2008143301 A1 WO2008143301 A1 WO 2008143301A1 JP 2008059386 W JP2008059386 W JP 2008059386W WO 2008143301 A1 WO2008143301 A1 WO 2008143301A1
Authority
WO
WIPO (PCT)
Prior art keywords
pattern
resin composition
coating
developing
pattern formation
Prior art date
Application number
PCT/JP2008/059386
Other languages
English (en)
French (fr)
Inventor
Atsushi Nakamura
Tsutomu Shimokawa
Junichi Takahashi
Takayoshi Abe
Tomoki Nagai
Tomohiro Kakizawa
Original Assignee
Jsr Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jsr Corporation filed Critical Jsr Corporation
Priority to KR1020147015408A priority Critical patent/KR20140095541A/ko
Priority to US12/601,011 priority patent/US8211624B2/en
Priority to JP2009515265A priority patent/JPWO2008143301A1/ja
Publication of WO2008143301A1 publication Critical patent/WO2008143301A1/ja
Priority to US13/403,036 priority patent/US20120156621A1/en
Priority to US14/465,320 priority patent/US20140363773A1/en

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

　（１）第一のレジスト層を選択的に露光した後、現像して第一のパターンを形成する工程と、（２）第一のパターン上に、ベークすることで現像液に対して不溶化又は難溶化する水酸基を有する樹脂、及び溶媒を含有する所定の樹脂組成物を塗布し、ベーク後、洗浄して第二のパターンを形成する工程と、（３）第二のパターンを、全面露光又は選択的に露光することによって部分的に現像液に可溶にした後、現像して、穴及び溝の少なくともいずれかが第二のパターンに形成された第三のパターンを形成する工程とを含むパターン形成方法である。
PCT/JP2008/059386 2007-05-23 2008-05-21 パターン形成方法及びそれに用いる樹脂組成物 WO2008143301A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020147015408A KR20140095541A (ko) 2007-05-23 2008-05-21 패턴 형성 방법 및 그 방법에 사용하는 수지 조성물
US12/601,011 US8211624B2 (en) 2007-05-23 2008-05-21 Method for pattern formation and resin composition for use in the method
JP2009515265A JPWO2008143301A1 (ja) 2007-05-23 2008-05-21 パターン形成方法及びそれに用いる樹脂組成物
US13/403,036 US20120156621A1 (en) 2007-05-23 2012-02-23 Radiation-sensitive resin composition
US14/465,320 US20140363773A1 (en) 2007-05-23 2014-08-21 Pattern-forming method

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007136669 2007-05-23
JP2007-136669 2007-05-23
JP2007-246847 2007-09-25
JP2007246847 2007-09-25

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/601,011 A-371-Of-International US8211624B2 (en) 2007-05-23 2008-05-21 Method for pattern formation and resin composition for use in the method
US13/403,036 Continuation US20120156621A1 (en) 2007-05-23 2012-02-23 Radiation-sensitive resin composition

Publications (1)

Publication Number Publication Date
WO2008143301A1 true WO2008143301A1 (ja) 2008-11-27

Family

ID=40031995

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/059386 WO2008143301A1 (ja) 2007-05-23 2008-05-21 パターン形成方法及びそれに用いる樹脂組成物

Country Status (5)

Country Link
US (3) US8211624B2 (ja)
JP (3) JPWO2008143301A1 (ja)
KR (3) KR20140095541A (ja)
TW (2) TW200905399A (ja)
WO (1) WO2008143301A1 (ja)

Cited By (8)

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WO2010123101A1 (ja) * 2009-04-24 2010-10-28 Jsr株式会社 感放射線性樹脂組成物
KR20110002798A (ko) * 2009-06-26 2011-01-10 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨. 전자 장비 형성 방법
KR20110002796A (ko) * 2009-06-26 2011-01-10 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨. 자기 정렬 스페이서 다중 패터닝 방법
CN102074462A (zh) * 2009-11-19 2011-05-25 罗门哈斯电子材料有限公司 形成电子器件的方法
US20110123936A1 (en) * 2008-09-19 2011-05-26 Jsr Corporation Resist pattern coating agent and resist pattern-forming method
JP2011215371A (ja) * 2010-03-31 2011-10-27 Toshiba Corp マスクの製造方法
US20130200500A1 (en) * 2006-09-26 2013-08-08 Fujitsu Limited Resist pattern thickening material, method for forming resist pattern, semiconductor device and method for manufacturing the same
JP2016048374A (ja) * 2010-03-31 2016-04-07 Jsr株式会社 感放射線性樹脂組成物

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TWI452444B (zh) * 2008-07-14 2014-09-11 Jsr Corp 光阻圖型不溶化樹脂組成物及使用其之光阻圖型形成方法
CN102804065B (zh) 2009-06-16 2014-07-16 Jsr株式会社 放射线敏感性树脂组合物
TW201125020A (en) * 2009-10-21 2011-07-16 Sumitomo Chemical Co Process for producing photoresist pattern
JP5741589B2 (ja) * 2010-09-08 2015-07-01 三菱瓦斯化学株式会社 微細構造体のパターン倒壊抑制用処理液及びこれを用いた微細構造体の製造方法
US20130213894A1 (en) * 2012-02-17 2013-08-22 Jsr Corporation Cleaning method of immersion liquid, immersion liquid cleaning composition, and substrate
JP5914241B2 (ja) * 2012-08-07 2016-05-11 株式会社ダイセル 高分子化合物の製造方法、高分子化合物、及びフォトレジスト用樹脂組成物
CN102832168A (zh) * 2012-09-11 2012-12-19 上海华力微电子有限公司 一种沟槽优先铜互连制作方法
CN103197513A (zh) * 2013-03-15 2013-07-10 上海华力微电子有限公司 防止光刻胶在湿法刻蚀中产生缺陷的工艺方法
US9360758B2 (en) * 2013-12-06 2016-06-07 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device process filter and method
JP6531397B2 (ja) * 2014-03-07 2019-06-19 Jsr株式会社 パターン形成方法及びこれに用いられる組成物
CN104698745B (zh) * 2015-02-11 2019-04-12 广州中国科学院先进技术研究所 一种尺寸可控制的纳米块制作方法
JP2016148777A (ja) * 2015-02-12 2016-08-18 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ 下層膜形成用組成物、およびそれを用いた下層膜の形成方法
JP6942052B2 (ja) * 2015-10-16 2021-09-29 東京応化工業株式会社 レジスト組成物およびレジストパターン形成方法
TWI696891B (zh) * 2015-12-09 2020-06-21 日商住友化學股份有限公司 光阻組成物及光阻圖案之製造方法
US10691023B2 (en) * 2017-08-24 2020-06-23 Taiwan Semiconductor Manufacturing Co., Ltd. Method for performing lithography process with post treatment
JP7257142B2 (ja) * 2018-12-27 2023-04-13 東京応化工業株式会社 化学増幅型感光性組成物、感光性ドライフィルム、パターン化されたレジスト膜の製造方法、鋳型付き基板の製造方法及びめっき造形物の製造方法

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