WO2008130031A1 - 導電性反射膜及びその製造方法 - Google Patents

導電性反射膜及びその製造方法 Download PDF

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Publication number
WO2008130031A1
WO2008130031A1 PCT/JP2008/057595 JP2008057595W WO2008130031A1 WO 2008130031 A1 WO2008130031 A1 WO 2008130031A1 JP 2008057595 W JP2008057595 W JP 2008057595W WO 2008130031 A1 WO2008130031 A1 WO 2008130031A1
Authority
WO
WIPO (PCT)
Prior art keywords
reflecting film
pores
manufacturing
same
conductive reflecting
Prior art date
Application number
PCT/JP2008/057595
Other languages
English (en)
French (fr)
Inventor
Kazuhiko Yamasaki
Yoshiaki Takata
Toshiharu Hayashi
Original Assignee
Mitsubishi Materials Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Corporation filed Critical Mitsubishi Materials Corporation
Priority to EP08740650A priority Critical patent/EP2139044B1/en
Priority to US12/596,125 priority patent/US8758891B2/en
Priority to ES08740650T priority patent/ES2399370T3/es
Priority to CN2008800123038A priority patent/CN101657908B/zh
Publication of WO2008130031A1 publication Critical patent/WO2008130031A1/ja
Priority to US13/572,360 priority patent/US10020409B2/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0808—Mirrors having a single reflecting layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249967—Inorganic matrix in void-containing component
    • Y10T428/24997—Of metal-containing material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249978—Voids specified as micro
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249978—Voids specified as micro
    • Y10T428/249979—Specified thickness of void-containing component [absolute or relative] or numerical cell dimension

Abstract

　この導電性反射膜は、金属ナノ粒子を焼成することにより形成される導電性反射膜であって、この膜の基材側の接触面に出現する気孔の平均直径は１００ｎｍ以下、この気孔が位置する平均深さは１００ｎｍ以下、この気孔の数密度は３０個／μｍ２以下である。
PCT/JP2008/057595 2007-04-19 2008-04-18 導電性反射膜及びその製造方法 WO2008130031A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
EP08740650A EP2139044B1 (en) 2007-04-19 2008-04-18 Conductive reflecting film and method for manufacturing the same
US12/596,125 US8758891B2 (en) 2007-04-19 2008-04-18 Conductive reflective film and production method thereof
ES08740650T ES2399370T3 (es) 2007-04-19 2008-04-18 Película reflectante conductora y método de producción de la misma
CN2008800123038A CN101657908B (zh) 2007-04-19 2008-04-18 导电性反射膜及其制备方法
US13/572,360 US10020409B2 (en) 2007-04-19 2012-08-10 Method for producing a conductive reflective film

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-110598 2007-04-19
JP2007110598 2007-04-19
JP2008095008A JP5169389B2 (ja) 2007-04-19 2008-04-01 導電性反射膜の製造方法
JP2008-095008 2008-04-01

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/596,125 A-371-Of-International US8758891B2 (en) 2007-04-19 2008-04-18 Conductive reflective film and production method thereof
US13/572,360 Division US10020409B2 (en) 2007-04-19 2012-08-10 Method for producing a conductive reflective film

Publications (1)

Publication Number Publication Date
WO2008130031A1 true WO2008130031A1 (ja) 2008-10-30

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/057595 WO2008130031A1 (ja) 2007-04-19 2008-04-18 導電性反射膜及びその製造方法

Country Status (7)

Country Link
US (2) US8758891B2 (ja)
EP (1) EP2139044B1 (ja)
JP (1) JP5169389B2 (ja)
CN (1) CN101657908B (ja)
ES (1) ES2399370T3 (ja)
TW (1) TWI472041B (ja)
WO (1) WO2008130031A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102097513A (zh) * 2009-10-23 2011-06-15 三菱综合材料株式会社 导电性反射膜及其制造方法
WO2012063908A1 (ja) * 2010-11-12 2012-05-18 三菱マテリアル株式会社 発光素子向け反射膜用組成物、発光素子、および発光素子の製造方法
US20120247537A1 (en) * 2009-06-17 2012-10-04 Aaron Mei Glass system of a solar photovoltaic panel
JP2013077415A (ja) * 2011-09-30 2013-04-25 Mitsubishi Materials Corp 導電性反射膜用組成物および導電性反射膜の製造方法

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TWI401702B (zh) * 2010-02-10 2013-07-11 Cheng Uei Prec Ind Co Ltd 導電薄膜的製備方法
JP5741810B2 (ja) * 2011-02-23 2015-07-01 三菱マテリアル株式会社 発光素子向け反射膜用組成物、発光素子、および発光素子の製造方法
CN108594338B (zh) * 2011-11-04 2019-11-26 凯姆控股有限公司 基于纳米结构的光学堆及具有该光学堆的显示器
JP5948936B2 (ja) * 2012-02-20 2016-07-06 三菱マテリアル株式会社 導電性反射膜の製造方法
US20140178247A1 (en) 2012-09-27 2014-06-26 Rhodia Operations Process for making silver nanostructures and copolymer useful in such process
CN104616728B (zh) * 2015-01-26 2016-09-14 河南大学 一种以铜为内芯的纳米电缆透明导电薄膜及其制备方法
WO2017094166A1 (ja) * 2015-12-03 2017-06-08 ハリマ化成株式会社 導電性ペーストの製造方法
KR20180119623A (ko) * 2016-02-23 2018-11-02 바스프 에스이 실리콘 오일을 포함하는 전도성 페이스트
CN105948528B (zh) * 2016-04-25 2019-03-19 上海西源新能源技术有限公司 一种高反射镀膜玻璃及其制备方法
CN106057359B (zh) * 2016-07-19 2018-08-10 中山大学 一种嵌入式多取向金属纳米线透明导电薄膜的制备方法

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JP5169389B2 (ja) 2013-03-27
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US8758891B2 (en) 2014-06-24
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