WO2008111289A1 - Ｉｉｉ族元素窒化物結晶の製造方法およびｉｉｉ族元素窒化物結晶 - Google Patents

Ｉｉｉ族元素窒化物結晶の製造方法およびｉｉｉ族元素窒化物結晶 Download PDF

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Publication number
WO2008111289A1
WO2008111289A1 PCT/JP2008/000444 JP2008000444W WO2008111289A1 WO 2008111289 A1 WO2008111289 A1 WO 2008111289A1 JP 2008000444 W JP2008000444 W JP 2008000444W WO 2008111289 A1 WO2008111289 A1 WO 2008111289A1
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WIPO (PCT)
Prior art keywords
group iii
iii element
nitride crystal
crystal
element nitride
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PCT/JP2008/000444
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English (en)
French (fr)
Inventor
Osamu Yamada
Hisashi Minemoto
Kouichi Hiranaka
Takeshi Hatakeyama
Takatomo Sasaki
Yusuke Mori
Fumio Kawamura
Yasuo Kitaoka
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Panasonic Corporation
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Publication date
Application filed by Panasonic Corporation filed Critical Panasonic Corporation
Priority to US12/524,811 priority Critical patent/US8574361B2/en
Priority to EP08720330.3A priority patent/EP2071062B1/en
Priority to KR1020097009874A priority patent/KR101103107B1/ko
Priority to CN2008800010928A priority patent/CN101558188B/zh
Publication of WO2008111289A1 publication Critical patent/WO2008111289A1/ja
Priority to US14/041,366 priority patent/US20140030549A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03044—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds comprising a nitride compounds, e.g. GaN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • C30B9/04—Single-crystal growth from melt solutions using molten solvents by cooling of the solution
    • C30B9/08—Single-crystal growth from melt solutions using molten solvents by cooling of the solution using other solvents
    • C30B9/10—Metal solvents
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/02—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of crystals, e.g. rock-salt, semi-conductors

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

　結晶成長レートが高く、高品質の結晶が得られるＩＩＩ族元素窒化物結晶の製造方法、およびＩＩＩ族元素窒化物結晶を提供する。ＩＩＩ族元素、アルカリ金属およびＩＩＩ族元素窒化物の種結晶を結晶成長容器に入れ、窒素含有ガス雰囲気下において、結晶成長容器を加圧加熱し、ＩＩＩ族元素、アルカリ金属および窒素を含む融液中でＩＩＩ族元素および窒素を反応させ、種結晶を核としてＩＩＩ族元素窒化物結晶を成長させるＩＩＩ族元素窒化物結晶の製造方法であって、結晶成長容器を加圧加熱する前に、沸点がアルカリ金属の融点よりも高い炭化水素を添加する。
PCT/JP2008/000444 2007-03-14 2008-03-05 Ｉｉｉ族元素窒化物結晶の製造方法およびｉｉｉ族元素窒化物結晶 WO2008111289A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US12/524,811 US8574361B2 (en) 2007-03-14 2008-03-05 Group-III element nitride crystal producing method and group-III element nitride crystal
EP08720330.3A EP2071062B1 (en) 2007-03-14 2008-03-05 Process for producing group iii element nitride crystal
KR1020097009874A KR101103107B1 (ko) 2007-03-14 2008-03-05 Ⅲ족 원소 질화물 결정의 제조 방법 및 ⅲ족 원소 질화물 결정
CN2008800010928A CN101558188B (zh) 2007-03-14 2008-03-05 Ⅲ族元素氮化物晶体的制造方法及ⅲ族元素氮化物晶体
US14/041,366 US20140030549A1 (en) 2007-03-14 2013-09-30 Group iii element nitride crystal producing method and group-iii element nitride crystal

Applications Claiming Priority (2)

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JP2007065845A JP4821007B2 (ja) 2007-03-14 2007-03-14 Ｉｉｉ族元素窒化物結晶の製造方法およびｉｉｉ族元素窒化物結晶
JP2007-065845 2007-03-14

Related Child Applications (2)

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US12/524,811 A-371-Of-International US8574361B2 (en) 2007-03-14 2008-03-05 Group-III element nitride crystal producing method and group-III element nitride crystal
US14/041,366 Division US20140030549A1 (en) 2007-03-14 2013-09-30 Group iii element nitride crystal producing method and group-iii element nitride crystal

Publications (1)

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WO2008111289A1 true WO2008111289A1 (ja) 2008-09-18

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Country Status (6)

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US (2) US8574361B2 (ja)
EP (1) EP2071062B1 (ja)
JP (1) JP4821007B2 (ja)
KR (1) KR101103107B1 (ja)
CN (1) CN101558188B (ja)
WO (1) WO2008111289A1 (ja)

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JP5147092B2 (ja) * 2009-03-30 2013-02-20 豊田合成株式会社 Ｉｉｉ族窒化物半導体の製造方法
US9175418B2 (en) 2009-10-09 2015-11-03 Soraa, Inc. Method for synthesis of high quality large area bulk gallium based crystals
US9564320B2 (en) 2010-06-18 2017-02-07 Soraa, Inc. Large area nitride crystal and method for making it
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WO2013126899A2 (en) * 2012-02-24 2013-08-29 The Regents Of The University Of California Electromagnetic mixing for nitride crystal growth
CN106068340B (zh) 2014-03-10 2019-07-30 日本碍子株式会社 氮化物结晶的制造方法
CN106103816B (zh) 2014-03-18 2021-02-09 赛奥科思有限公司 氮化镓晶体的制造方法
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JP6420366B2 (ja) * 2014-12-26 2018-11-07 日本碍子株式会社 １３族元素窒化物結晶の育成方法および装置
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US20140030549A1 (en) 2014-01-30
CN101558188B (zh) 2012-08-29
EP2071062A1 (en) 2009-06-17
KR101103107B1 (ko) 2012-01-04
US20120168695A2 (en) 2012-07-05
JP2008222519A (ja) 2008-09-25
JP4821007B2 (ja) 2011-11-24
EP2071062B1 (en) 2013-09-25
US20110012070A2 (en) 2011-01-20
KR20090074234A (ko) 2009-07-06
US20100078606A1 (en) 2010-04-01
EP2071062A4 (en) 2011-08-03
US8574361B2 (en) 2013-11-05
CN101558188A (zh) 2009-10-14

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