WO2008105198A1 - 導電膜および導電膜の製造方法 - Google Patents

導電膜および導電膜の製造方法 Download PDF

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Publication number
WO2008105198A1
WO2008105198A1 PCT/JP2008/050806 JP2008050806W WO2008105198A1 WO 2008105198 A1 WO2008105198 A1 WO 2008105198A1 JP 2008050806 W JP2008050806 W JP 2008050806W WO 2008105198 A1 WO2008105198 A1 WO 2008105198A1
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WIPO (PCT)
Prior art keywords
conductive film
zno
film layer
oxide
group iii
Prior art date
Application number
PCT/JP2008/050806
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English (en)
French (fr)
Inventor
Yutaka Kishimoto
Souko Fukahori
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Murata Manufacturing Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co., Ltd. filed Critical Murata Manufacturing Co., Ltd.
Priority to KR1020087018927A priority Critical patent/KR101057571B1/ko
Priority to EP08703650A priority patent/EP2061041A4/en
Priority to CN2008800000606A priority patent/CN101542639B/zh
Priority to JP2008529067A priority patent/JP4947051B2/ja
Priority to US12/182,716 priority patent/US20080280119A1/en
Publication of WO2008105198A1 publication Critical patent/WO2008105198A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y10T428/264—Up to 3 mils
    • Y10T428/265—1 mil or less
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31507—Of polycarbonate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31721—Of polyimide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31786—Of polyester [e.g., alkyd, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31855—Of addition polymer from unsaturated monomers
    • Y10T428/31935—Ester, halide or nitrile of addition polymer

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Non-Insulated Conductors (AREA)
  • Manufacturing Of Electric Cables (AREA)

Abstract

　実用可能な耐湿性と、透明導電膜として必要な特性を備え、しかも経済性に優れた、ＺｎＯ系の導電膜およびその製造方法を提供する。 【解決手段】基体１１の表面に、III族元素酸化物をドーパントとして含み、または含まない、ＺｎＯを主成分とする第１のＺｎＯ導電膜層１を形成し、その上に、種類の異なるIII族元素酸化物を含む、透明性を有する第２のＺｎＯ導電膜層２を形成して複数層構造を有する導電膜１０を形成する。 　第１のＺｎＯ導電膜層の膜厚を５～５０nm以下とする。 　また、第２のＺｎＯ導電膜層以降のＺｎＯ導電膜層を、酸化亜鉛（ＺｎＯ）を主成分とし、III族元素酸化物を７重量％以下の割合で含有するものとする。 　第１のＺｎＯ導電膜層を、その上に形成される第２のＺｎＯ導電膜層以降の導電膜層の結晶性を向上させるために必要な、結晶性の高いＺｎＯ導電膜が得られるような条件下（例えば加熱条件下）で形成する。
PCT/JP2008/050806 2007-02-26 2008-01-22 導電膜および導電膜の製造方法 WO2008105198A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020087018927A KR101057571B1 (ko) 2007-02-26 2008-01-22 도전막 및 도전막의 제조방법
EP08703650A EP2061041A4 (en) 2007-02-26 2008-01-22 LADDERING FILM AND METHOD FOR PRODUCING A CONDUCTIVE FILM
CN2008800000606A CN101542639B (zh) 2007-02-26 2008-01-22 导电膜及导电膜的制造方法
JP2008529067A JP4947051B2 (ja) 2007-02-26 2008-01-22 導電膜および導電膜の製造方法
US12/182,716 US20080280119A1 (en) 2007-02-26 2008-07-30 Conductive film and method for manufacturing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-046010 2007-02-26
JP2007046010 2007-02-26

Related Child Applications (1)

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US12/182,716 Continuation US20080280119A1 (en) 2007-02-26 2008-07-30 Conductive film and method for manufacturing the same

Publications (1)

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WO2008105198A1 true WO2008105198A1 (ja) 2008-09-04

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PCT/JP2008/050806 WO2008105198A1 (ja) 2007-02-26 2008-01-22 導電膜および導電膜の製造方法

Country Status (6)

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US (1) US20080280119A1 (ja)
EP (1) EP2061041A4 (ja)
JP (1) JP4947051B2 (ja)
KR (1) KR101057571B1 (ja)
CN (1) CN101542639B (ja)
WO (1) WO2008105198A1 (ja)

Cited By (6)

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JP2009265629A (ja) * 2008-03-31 2009-11-12 Kochi Univ Of Technology 表示用基板及びその製造方法並びに表示装置
WO2012029797A1 (ja) * 2010-08-30 2012-03-08 住友金属鉱山株式会社 透明導電膜積層体及びその製造方法、並びに薄膜太陽電池及びその製造方法
JP2012243981A (ja) * 2011-05-20 2012-12-10 Ulvac Japan Ltd 太陽電池、太陽電池用透明導電膜付き基板及びそれらの製造方法
JP2013119664A (ja) * 2011-12-09 2013-06-17 Nippon Telegr & Teleph Corp <Ntt> 透明導電膜およびその形成方法
WO2015118724A1 (ja) * 2014-02-07 2015-08-13 リンテック株式会社 透明導電性積層体、透明導電性積層体の製造方法、および透明導電性積層体を用いてなる電子デバイス
WO2015118726A1 (ja) * 2014-02-07 2015-08-13 リンテック株式会社 透明導電性積層体、透明導電性積層体の製造方法、および透明導電性積層体を用いてなる電子デバイス

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EP2071586A4 (en) * 2007-09-05 2014-03-05 Murata Manufacturing Co TRANSPARENT CONDUCTIVE FILM AND METHOD OF MANUFACTURING THE SAME
GB0803702D0 (en) * 2008-02-28 2008-04-09 Isis Innovation Transparent conducting oxides
JP5022341B2 (ja) * 2008-11-19 2012-09-12 三菱重工業株式会社 光電変換装置
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JP5630747B2 (ja) 2010-05-14 2014-11-26 リンテック株式会社 酸化亜鉛系導電性積層体及びその製造方法並びに電子デバイス
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KR101178496B1 (ko) * 2011-09-28 2012-09-07 한국에너지기술연구원 이중구조의 투명전도막 및 그 제조방법
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KR101293647B1 (ko) 2012-07-27 2013-08-13 삼성코닝정밀소재 주식회사 투명 전도성 산화물 박막 기판, 그 제조방법, 이를 포함하는 유기전계발광소자 및 광전지
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CN104051551B (zh) * 2013-03-14 2017-03-01 台湾积体电路制造股份有限公司 薄膜太阳能电池及其形成方法
KR102154899B1 (ko) * 2018-10-08 2020-09-10 동의대학교 산학협력단 몰리브덴 박막 표면의 미세구조 제어방법
CN109878227B (zh) * 2019-01-24 2020-09-25 江苏大学 一种提高tco薄膜综合光电特性的激光加工方法
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CN117712261B (zh) * 2024-02-02 2024-05-14 江西兆驰半导体有限公司 Led及其制备方法

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Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009265629A (ja) * 2008-03-31 2009-11-12 Kochi Univ Of Technology 表示用基板及びその製造方法並びに表示装置
TWI514600B (zh) * 2010-08-30 2015-12-21 Sumitomo Metal Mining Co A transparent conductive film laminate, a method for manufacturing the same, and a thin film solar cell and a method for manufacturing the same
WO2012029797A1 (ja) * 2010-08-30 2012-03-08 住友金属鉱山株式会社 透明導電膜積層体及びその製造方法、並びに薄膜太陽電池及びその製造方法
JP2012049084A (ja) * 2010-08-30 2012-03-08 Sumitomo Metal Mining Co Ltd 透明導電膜積層体及びその製造方法、並びに薄膜太陽電池及びその製造方法
CN103081028A (zh) * 2010-08-30 2013-05-01 住友金属矿山株式会社 透明导电膜层叠体及其制造方法、以及薄膜太阳能电池及其制造方法
US9349885B2 (en) 2010-08-30 2016-05-24 Sumitomo Metal Mining Co., Ltd. Multilayer transparent electroconductive film and method for manufacturing same, as well as thin-film solar cell and method for manufacturing same
JP2012243981A (ja) * 2011-05-20 2012-12-10 Ulvac Japan Ltd 太陽電池、太陽電池用透明導電膜付き基板及びそれらの製造方法
JP2013119664A (ja) * 2011-12-09 2013-06-17 Nippon Telegr & Teleph Corp <Ntt> 透明導電膜およびその形成方法
WO2015118724A1 (ja) * 2014-02-07 2015-08-13 リンテック株式会社 透明導電性積層体、透明導電性積層体の製造方法、および透明導電性積層体を用いてなる電子デバイス
WO2015119240A1 (ja) * 2014-02-07 2015-08-13 リンテック株式会社 透明導電性積層体、透明導電性積層体の製造方法、及び透明導電性積層体を用いてなる電子デバイス
WO2015119238A1 (ja) * 2014-02-07 2015-08-13 リンテック株式会社 透明導電性積層体、透明導電性積層体の製造方法、及び透明導電性積層体を用いてなる電子デバイス
WO2015118726A1 (ja) * 2014-02-07 2015-08-13 リンテック株式会社 透明導電性積層体、透明導電性積層体の製造方法、および透明導電性積層体を用いてなる電子デバイス
JPWO2015119240A1 (ja) * 2014-02-07 2017-03-30 リンテック株式会社 透明導電性積層体、透明導電性積層体の製造方法、及び透明導電性積層体を用いてなる電子デバイス
JPWO2015119238A1 (ja) * 2014-02-07 2017-03-30 リンテック株式会社 透明導電性積層体、透明導電性積層体の製造方法、及び透明導電性積層体を用いてなる電子デバイス

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EP2061041A1 (en) 2009-05-20
JPWO2008105198A1 (ja) 2010-06-03
CN101542639A (zh) 2009-09-23
US20080280119A1 (en) 2008-11-13
JP4947051B2 (ja) 2012-06-06
KR101057571B1 (ko) 2011-08-17
KR20090018598A (ko) 2009-02-20
EP2061041A4 (en) 2011-06-29
CN101542639B (zh) 2013-07-31

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