WO2008096943A1 - Multifunctional die attachment film and semiconductor packaging method using the same - Google Patents

Multifunctional die attachment film and semiconductor packaging method using the same Download PDF

Info

Publication number
WO2008096943A1
WO2008096943A1 PCT/KR2007/003748 KR2007003748W WO2008096943A1 WO 2008096943 A1 WO2008096943 A1 WO 2008096943A1 KR 2007003748 W KR2007003748 W KR 2007003748W WO 2008096943 A1 WO2008096943 A1 WO 2008096943A1
Authority
WO
WIPO (PCT)
Prior art keywords
attachment film
die
die attachment
chip
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2007/003748
Other languages
English (en)
French (fr)
Inventor
Byoung-Un Kang
Joon-Mo Seo
Choong-Hyun Sung
Jae-Hoon Kim
Soon-Young Hyun
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LS Mtron Ltd
LS Cable and Systems Ltd
Original Assignee
LS Cable Ltd
LS Mtron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020070013935A external-priority patent/KR20080074602A/ko
Priority claimed from KR1020070013933A external-priority patent/KR20080074601A/ko
Application filed by LS Cable Ltd, LS Mtron Ltd filed Critical LS Cable Ltd
Priority to JP2009548981A priority Critical patent/JP2010528450A/ja
Priority to US12/526,313 priority patent/US20100317155A1/en
Priority to CN200780052483.8A priority patent/CN101689513B/zh
Publication of WO2008096943A1 publication Critical patent/WO2008096943A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/27001—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate
    • H01L2224/27003—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate for holding or transferring the layer preform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29075—Plural core members
    • H01L2224/2908—Plural core members being stacked
    • H01L2224/29082—Two-layer arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29344—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29347—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29355—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/2939—Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29399—Coating material
    • H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/2954—Coating
    • H01L2224/29599—Material
    • H01L2224/29698—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29798—Fillers
    • H01L2224/29799—Base material
    • H01L2224/2989—Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01058—Cerium [Ce]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/0665—Epoxy resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y10T428/2495—Thickness [relative or absolute]
    • Y10T428/24959—Thickness [relative or absolute] of adhesive layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer
    • Y10T428/2852—Adhesive compositions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer
    • Y10T428/2852—Adhesive compositions
    • Y10T428/287—Adhesive compositions including epoxy group or epoxy polymer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer
    • Y10T428/2852—Adhesive compositions
    • Y10T428/2878—Adhesive compositions including addition polymer from unsaturated monomer
    • Y10T428/2883—Adhesive compositions including addition polymer from unsaturated monomer including addition polymer of diene monomer [e.g., SBR, SIS, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer
    • Y10T428/2852—Adhesive compositions
    • Y10T428/2878—Adhesive compositions including addition polymer from unsaturated monomer
    • Y10T428/2891—Adhesive compositions including addition polymer from unsaturated monomer including addition polymer from alpha-beta unsaturated carboxylic acid [e.g., acrylic acid, methacrylic acid, etc.] Or derivative thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer
    • Y10T428/2852—Adhesive compositions
    • Y10T428/2896—Adhesive compositions including nitrogen containing condensation polymer [e.g., polyurethane, polyisocyanate, etc.]

Definitions

  • the present invention relates to a multifunctional die attachment film, and in particular, to a multifunctional die attachment film used in a semiconductor packaging process, which serves as a backgrinding tape in a backgrinding process and after the backgrinding process, is not removed but used to attach a die chip to a connection member, and a semiconductor packaging method using the same.
  • a process for fabricating a semiconductor chip involves a process for forming fine circuit patterns in a semiconductor wafer having a predetermined thickness, a process for backgrinding a back surface of the wafer and a process for cutting the wafer into individual die chips in conformity with a predetermined device standard and packaging the individual die chips into semiconductor devices.
  • a backgrinding tape is attached to a front surface of the wafer having the fine circuit patterns, the backgrinding tape attached surface is absorbed by a grind chuck, the back surface of the wafer is closely placed on a sawing die, and the wafer is background while a slurry is injected such that the wafer is 150 to 200D thick.
  • a slurry is injected such that the wafer is 150 to 200D thick.
  • large pressure or mechanical shock is applied to the wafer, and the backgrinding tape prevents damage of the wafer which may occur during this process.
  • the present invention is designed to solve the problems of the prior art, and therefore it is an object of the present invention to provide a multifunctional die attachment film used in a semiconductor packaging process, which may serve as a die attachment film used to attach a die chip to a connection member and concurrently a backgrinding tape in a backgrinding process before the die attaching process, and a semiconductor device packaging method using the same.
  • a multifunctional die attachment film used in a semiconductor packaging process includes a first die attachment film attached to a surface of a wafer having fine circuit patterns and solder bump patterns and having a first adhesive strength; and a second die attachment film attached on the first die attachment film and having a second adhesive strength, and the multifunctional die attachment film serves as a backgrinding tape in a backgrinding process of a semiconductor packaging process, and after the backgrinding process is completed, is not removed but used to attach a die chip to a connection member.
  • each of the first die attachment film and the second die attachment film is made of transparent or translucent materials.
  • the multifunctional die attachment film has a laminated stack structure of the first die attachment film and the second die attachment film, and each of the first die attachment film and the second die attachment film is made of any one resin material selected from the group consisting of an epoxy -based resin, an acryl- based resin, a silicon-based resin, a rubber-based resin, an urethan-based resin and an elastomer-based resin.
  • the first adhesive strength is 10 to 2,000gf/D at 25 0 C based on silicon wafer surface attachment
  • the second adhesive strength is 10 to 2,000gf/D at 25 0 C based on AUS308 surface attachment.
  • each of the first die attachment film and the second die attachment film has a moisture absorption rate of 0 to 2%wt based on a moisture resistance test (JL2) of 85°C/60% moisture for seven days.
  • JL2 moisture resistance test
  • each of the first die attachment film and the second die attachment film has a storage modulus of 10 to 10 Pa at 5O 0 C, and more preferably, the second die attachment film has a storage modulus of 10 to 10 Pa at 5O 0 C.
  • At least one of the first die attachment film and the second die attachment film contains conductive fillers, and the conductive fillers is contained with 0.5 to 70 volume% to volume of the resin material.
  • a ratio of thickness of a film with the conductive fillers to thickness of a film without the conductive fillers is 10:1 to 0.1:1, more preferably, 4:1 to 0.5:1.
  • the conductive fillers are made of any one conductive metal selected from the group consisting of gold, silver, copper and nickel, or a core- shell configured organic material coated with the conductive metal.
  • the conductive fillers have a particle diameter of 0.05 to
  • an intermediate layer is interposed between the first die attachment film and the second die attachment film to form a multilayered structure, and is made of any one or at least two selected from the group consisting of polyester, polyethylene, polyethyleneterephthalate, vinyl, polypropylene, polystyrene, polycarbonate, polyvinylchloride, polymethylmethacrylate, polyacetal, polyoxymethylene, poly- butyleneterephthalate, acrylonitrile-butadiene-styrene and ethylene-vinylalcohol copolymer.
  • a semiconductor packaging method using the multifunctional die attachment film includes (a) attaching the die attachment film to a surface of a wafer having fine circuit patterns and solder bump patterns such that a first die attachment film surface of the die attachment film faces the wafer; (b) backgrinding a back surface of the wafer and then attaching a dicing film thereto; (c) sawing the wafer having the die attachment film into at least one die chip; and (d) removing the dicing film from the die chip and then electrically connecting the die chip to a connection member by flip chip bonding using solder bumps such that a second die attachment film surface of the die attachment film faces the connection member.
  • a semiconductor packaging method using the multifunctional die attachment film includes (a) attaching the die attachment film to a surface of the wafer having fine circuit patterns and solder bump patterns such that a first die attachment film surface of the die attachment film faces the wafer; (b) backgrinding a back surface of the wafer and then attaching a dicing die attachment film thereto; (c) sawing the wafer having the die attachment film into at least one die chip; and (d) removing a dicing film layer of the dicing die attachment film from the die chip, attaching the die chip to a connection member, and then electrically connecting another die chip to the die chip by flip chip bonding using solder bumps such that the another die chip faces the die attachment film surface.
  • connection member is any one selected from the group consisting of PCB (Printed Circuit Board), a lead frame and a die chip.
  • FIG. 1 is a cross-sectional view illustrating a die attachment film according to a preferred embodiment of the present invention.
  • FIG. 2 is a flow chart illustrating a semiconductor packaging method according to a preferred embodiment of the present invention.
  • FIGs. 3 to 6 are cross-sectional views illustrating a semiconductor packaging process according to a preferred embodiment of the present invention. Best Mode for Carrying Out the Invention
  • FIG. 1 is a cross-sectional view illustrating a die attachment film according to a preferred embodiment of the present invention.
  • the die attachment film 100 includes a first die attachment film
  • the protection film 11 protects adhesive surfaces of the die attachment film 100 from impurities, and may use polyethylene or polyethyleneterephthalate (PET).
  • PET polyethylene or polyethyleneterephthalate
  • the present invention is not limited in this regard.
  • the die attachment film 100 has a laminated stack structure of the first die attachment film 10 and the second die attachment film 20.
  • the first die attachment film 10 is attached to the surface of the wafer having the fine circuit patterns and the solder bump patterns 50 with a first adhesive strength, and is a material layer required for high adhesive strength with a die chip separated from the wafer.
  • the second die attachment film 20 is attached on the first die attachment film 10 with a second adhesive strength, and is a material layer absorbed by a grind chuck for fixing the wafer in a backgrinding process.
  • the first adhesive strength is 10 to 2,000gf/D at 25 0 C based on silicon wafer surface attachment
  • the second adhesive strength is 10 to 2,000gf/D at 25 0 C based on AUS308 surface attachment.
  • the die attachment film 100 should have a moisture resistant property, and thus requires a low moisture absorption rate. In consideration of this point, the die attachment film 100 has a moisture absorption rate of 0 to 2%wt based on a moisture resistance test (JL2) of 85°C/60% moisture for seven days.
  • JL2 moisture resistance test
  • the die attachment film 100 has a storage modulus of 10 to 10 Pa at 5O 0 C, and more preferably, the second die attachment film 100 has a storage modulus of 10 6 to 10 9 Pa at 5O 0 C.
  • the die attachment film 100 is capable of serving as a backgrinding tape in the backgrinding process, and after the backgrinding process is completed, the die attachment film 100 is not removed, but remains as it is during the subsequent wafer dicing process. Therefore, the die attachment film 100 is made of transparent or translucent materials to show the surface of the wafer having the fine circuit patterns in the wafer dicing process.
  • Each of the first die attachment film 10 and the second die attachment film 20 may use an epoxy-based resin, an acryl-based resin, a silicon-based resin, a rubber-based resin, an urethan-based resin or an elastomer-based resin.
  • an epoxy-based resin an acryl-based resin, a silicon-based resin, a rubber-based resin, an urethan-based resin or an elastomer-based resin.
  • the present invention is not limited in this regard.
  • an intermediate layer may be interposed between the first die attachment film
  • the intermediate layer is made of polyester, polyethylene, polyethyleneterephthalate, vinyl, polypropylene, polystyrene, polycarbonate, polyvinylchloride, polymethylmethacrylate, polyacetal, polyoxymethylene, poly- butyleneterephthalate, acrylonitrile-butadiene-styrene or ethylene- vinylalcohol copolymer.
  • the present invention is not limited in this regard.
  • the first die attachment film 10 and the second die attachment film 20 of the die attachment film 100 contains conductive fillers 21 for good electrical bondability between the die chip and the connection member when the die chip is flip chip bonded to the connection member.
  • the conductive fillers 21 are made of any one selected from a conductive metal such as gold, silver, copper or nickel, and a core-shell configured organic material coated with the conductive metal.
  • the present invention is not limited in this regard.
  • the conductive fillers 21 are contained with 0.5 to 70 volume% to volume of the resin material of the second attachment film 20, and a particle diameter of the conductive fillers 21 is 0.05 to 50 D.
  • FIG. 2 is a flow chart illustrating a semiconductor packaging method according to a preferred embodiment of the present invention
  • FIGs. 3 to 6 are cross-sectional views illustrating a semiconductor packaging process according to a preferred embodiment of the present invention.
  • the protection film 11 is removed from the die attachment film 100, and the die attachment film 100 is attached to the surface of the wafer 30 having the fine circuit patterns and solder bump patterns 50 such that the first die attachment film 10 surface of the die attachment film 100 faces the wafer 30 (SlOO).
  • the wafer 30 is fixed such that the second die attachment film 20 surface formed on the first die attachment film 10 attached to the wafer 30 is absorbed by a grind chuck, and backgrinding is performed (S200).
  • a dicing film 40 is attached to the background back surface of the wafer 30 having the die attachment film 100 attached thereto (S300).
  • the wafer 30 is fixed such that the dicing film 40 attached to the back surface of the wafer 30 is attached to a dicing table, and the wafer 30 is sawn into individual die chips 110 by a dicing saw 70 (S400).
  • the die chip 110 is picked up, and the dicing film 40 is removed from the die chip 110. And, as shown in FIG. 6, the die chip 110 is turned over such that the second attachment film 20 containing the conductive fillers 21 faces a connection member 60, and flip chip bonding is performed to establish an electrical connection between the die chip 110 and the connection member 60 using solder bumps 50 (S500). At this time, the conductive fillers 21 support the electrical connection between the die chip 110 and the connection member 60 more closely.
  • connection member 60 is any one selected from PCB (Printed Circuit
  • connection member 60 is not limited to a specific type of the connection member 60.
  • the die attachment film 100 performs a basic function for attaching the die chip 110 to the connection member 60, and serves as a backgrinding tape during the backgrinding process and concurrently an underfill between the die chip 110 and the connection member 60 during the flip chip bonding process.
  • the dicing film 40 attached to the back surface of the wafer 30 may be replaced by a dicing die attachment film (not shown) in step S300, and in this case, the dicing die attachment film (not shown) surface of the die chip 110 may be attached to the connection member 60 and another die chip (not shown) may be attached to the die attachment film 100 surface of the die chip 110, and thus two different die chips may be electrically connected to each other.
  • the semiconductor packaging method according to the present invention may utilize the die attachment film for attaching the die chip to the connection member as a backgrinding tape in the backgrinding process and concurrently a wafer protection means in the wafer dicing process, thereby preventing sawing burr, scratches or cracks which may occur to the surface of the wafer. And, the present invention may eliminate a need for removing the backgrinding tape after the backgrinding process. Further, the present invention may form the die attachment film from a backgrinding tape material and an underfill material, thereby reducing semiconductor packaging costs.

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Dicing (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Adhesive Tapes (AREA)
  • Wire Bonding (AREA)
PCT/KR2007/003748 2007-02-09 2007-08-03 Multifunctional die attachment film and semiconductor packaging method using the same Ceased WO2008096943A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009548981A JP2010528450A (ja) 2007-02-09 2007-08-03 多機能ダイ接着フィルム及びこれを用いた半導体素子パッケージング方法
US12/526,313 US20100317155A1 (en) 2007-02-09 2007-08-03 Multifunctional die attachment film and semiconductor packaging using the same
CN200780052483.8A CN101689513B (zh) 2007-02-09 2007-08-03 多功能芯片贴膜以及使用此贴膜的半导体封装方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2007-0013933 2007-02-09
KR1020070013935A KR20080074602A (ko) 2007-02-09 2007-02-09 반도체 웨이퍼 백그라인딩 테이프 및 이를 이용한 반도체 소자 패키징 방법
KR1020070013933A KR20080074601A (ko) 2007-02-09 2007-02-09 다기능 다이 접착 필름
KR10-2007-0013935 2007-02-09

Publications (1)

Publication Number Publication Date
WO2008096943A1 true WO2008096943A1 (en) 2008-08-14

Family

ID=39681827

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2007/003748 Ceased WO2008096943A1 (en) 2007-02-09 2007-08-03 Multifunctional die attachment film and semiconductor packaging method using the same

Country Status (4)

Country Link
US (1) US20100317155A1 (enExample)
JP (1) JP2010528450A (enExample)
CN (1) CN101689513B (enExample)
WO (1) WO2008096943A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010275509A (ja) * 2009-06-01 2010-12-09 Furukawa Electric Co Ltd:The 粘着フィルム及び半導体ウエハ加工用テープ
CN102122624A (zh) * 2011-02-01 2011-07-13 南通富士通微电子股份有限公司 晶圆封装方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201341199A (zh) * 2011-12-12 2013-10-16 日東電工股份有限公司 積層片材以及使用積層片材之半導體裝置之製造方法
CN103998238B (zh) * 2012-01-06 2016-08-24 Lg化学株式会社 封装薄膜
US9741682B2 (en) * 2015-12-18 2017-08-22 International Business Machines Corporation Structures to enable a full intermetallic interconnect
US10629539B2 (en) * 2017-11-07 2020-04-21 Taiwan Semiconductor Manufacturing Co., Ltd. Package structure and method of fabricating the same
CN109037036A (zh) * 2018-08-02 2018-12-18 德淮半导体有限公司 晶圆边缘修剪方法
CN110223942A (zh) * 2019-06-06 2019-09-10 长江存储科技有限责任公司 晶圆贴膜方法及晶圆贴膜装置
CN110957269A (zh) * 2019-11-08 2020-04-03 广东佛智芯微电子技术研究有限公司 一种改善埋入式扇出型封装结构电镀性能的制作方法
CN113161242B (zh) * 2021-02-23 2022-03-25 青岛歌尔微电子研究院有限公司 芯片封装工艺
KR102729808B1 (ko) * 2021-05-28 2024-11-14 (주)이녹스첨단소재 웨이퍼 가공용 점착 필름

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002118147A (ja) * 2000-10-11 2002-04-19 Mitsui Chemicals Inc 半導体チップをプリント配線基板に装着する方法及びその方法の実施に用いる装着用シート
US20040097054A1 (en) * 2002-10-25 2004-05-20 Yoshiyuki Abe Fabrication method of semiconductor circuit device
WO2006014003A1 (ja) * 2004-08-03 2006-02-09 The Furukawa Electric Co., Ltd. 半導体装置製造方法およびウエハ加工用テープ

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000195584A (ja) * 1998-12-25 2000-07-14 Sony Corp 電気的接続装置と電気的接続方法
JP4180206B2 (ja) * 1999-11-12 2008-11-12 リンテック株式会社 半導体装置の製造方法
JP2001332130A (ja) * 2000-05-19 2001-11-30 Tdk Corp 機能性膜
JP2003049152A (ja) * 2001-08-02 2003-02-21 Hitachi Chem Co Ltd 回路接続用接着剤及びそれを用いた接続方法、接続構造体
JP2003174125A (ja) * 2001-09-26 2003-06-20 Nitto Denko Corp 半導体装置の製造法及びこれに用いるシート状樹脂組成物
JP4002236B2 (ja) * 2003-02-05 2007-10-31 古河電気工業株式会社 ウエハ貼着用粘着テープ
US20070003758A1 (en) * 2004-04-01 2007-01-04 National Starch And Chemical Investment Holding Corporation Dicing die bonding film
JP2006335861A (ja) * 2005-06-01 2006-12-14 Nippon Zeon Co Ltd 接着剤、接着剤フィルム、半導体部品パッケージ、および半導体部品パッケージの製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002118147A (ja) * 2000-10-11 2002-04-19 Mitsui Chemicals Inc 半導体チップをプリント配線基板に装着する方法及びその方法の実施に用いる装着用シート
US20040097054A1 (en) * 2002-10-25 2004-05-20 Yoshiyuki Abe Fabrication method of semiconductor circuit device
WO2006014003A1 (ja) * 2004-08-03 2006-02-09 The Furukawa Electric Co., Ltd. 半導体装置製造方法およびウエハ加工用テープ

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010275509A (ja) * 2009-06-01 2010-12-09 Furukawa Electric Co Ltd:The 粘着フィルム及び半導体ウエハ加工用テープ
CN102122624A (zh) * 2011-02-01 2011-07-13 南通富士通微电子股份有限公司 晶圆封装方法
CN102122624B (zh) * 2011-02-01 2013-02-13 南通富士通微电子股份有限公司 晶圆封装方法

Also Published As

Publication number Publication date
JP2010528450A (ja) 2010-08-19
CN101689513A (zh) 2010-03-31
CN101689513B (zh) 2011-07-13
US20100317155A1 (en) 2010-12-16

Similar Documents

Publication Publication Date Title
US20100317155A1 (en) Multifunctional die attachment film and semiconductor packaging using the same
TWI284960B (en) Manufacturing method of semiconductor device
CN101038891B (zh) 半导体装置的制造方法
JP3453390B2 (ja) 半導体装置、半導体チップ搭載用基板及びその製造法
US8030769B2 (en) Grooving bumped wafer pre-underfill system
US20090127686A1 (en) Stacking die package structure for semiconductor devices and method of the same
JP2011140617A (ja) アンダーフィル形成用接着剤組成物、アンダーフィル形成用接着剤シート及び半導体装置の製造方法
JP2010528450A5 (enExample)
KR20120036879A (ko) 접착제 조성물, 접착제 시트 및 반도체 장치의 제조 방법
KR102012788B1 (ko) 접착 필름, 반도체 장치의 제조 방법 및 반도체 장치
WO2010137443A1 (ja) 回路部材接続用接着剤シート及び半導体装置の製造方法
JP5569121B2 (ja) 接着剤組成物、回路部材接続用接着剤シート及び半導体装置の製造方法
CN101150102A (zh) 半导体器件及其制造方法
JP2014237811A (ja) 接着フィルム、接着シート、ダイシングシート一体型接着フィルム、バックグラインドテープ一体型接着フィルム、ダイシングシート兼バックグラインドテープ一体型接着フィルム及び半導体装置
JP4161544B2 (ja) 半導体素子搭載用接着フィルム
KR101035297B1 (ko) 반도체 장치의 제조 방법
JP3617504B2 (ja) 半導体素子搭載用接着フィルム
JP5811514B2 (ja) フィルム状接着剤
JP2010245191A (ja) フィルム状接着剤
KR101266546B1 (ko) 반도체용 접착제 조성물 및 이를 이용한 반도체용 접착 필름
KR20230068394A (ko) 반도체용 접착제, 및, 반도체 장치 및 그 제조 방법
JP2010265416A (ja) フィルム状接着剤
KR20080074601A (ko) 다기능 다이 접착 필름
JP7438973B2 (ja) 半導体装置の製造方法
JP2010287835A (ja) 半導体回路部材の製造方法

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200780052483.8

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07807955

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2009548981

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 07807955

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 12526313

Country of ref document: US