WO2008035799A1 - Procédé de purification du silicium, silicium et cellule solaire - Google Patents
Procédé de purification du silicium, silicium et cellule solaire Download PDFInfo
- Publication number
- WO2008035799A1 WO2008035799A1 PCT/JP2007/068698 JP2007068698W WO2008035799A1 WO 2008035799 A1 WO2008035799 A1 WO 2008035799A1 JP 2007068698 W JP2007068698 W JP 2007068698W WO 2008035799 A1 WO2008035799 A1 WO 2008035799A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- silicon
- molten salt
- gas
- purifying
- mixture
- Prior art date
Links
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 179
- 239000010703 silicon Substances 0.000 title claims abstract description 179
- 238000000034 method Methods 0.000 title claims abstract description 76
- 238000000746 purification Methods 0.000 title claims abstract description 39
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 174
- 150000003839 salts Chemical class 0.000 claims abstract description 72
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 38
- 229910052796 boron Inorganic materials 0.000 claims abstract description 38
- 239000000203 mixture Substances 0.000 claims abstract description 38
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910052751 metal Inorganic materials 0.000 claims abstract description 24
- 125000001309 chloro group Chemical group Cl* 0.000 claims abstract description 22
- 239000002184 metal Substances 0.000 claims abstract description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 18
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims abstract description 13
- 229910001634 calcium fluoride Inorganic materials 0.000 claims abstract description 13
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims abstract description 13
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims abstract description 11
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000000292 calcium oxide Substances 0.000 claims abstract description 11
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 11
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 11
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 10
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000005049 silicon tetrachloride Substances 0.000 claims abstract description 9
- 238000010438 heat treatment Methods 0.000 claims description 20
- 238000002844 melting Methods 0.000 claims description 19
- 230000008018 melting Effects 0.000 claims description 18
- 238000007711 solidification Methods 0.000 claims description 16
- 230000008023 solidification Effects 0.000 claims description 16
- 238000005204 segregation Methods 0.000 claims description 9
- 239000002253 acid Substances 0.000 claims description 4
- 230000006698 induction Effects 0.000 claims description 4
- 239000002994 raw material Substances 0.000 claims description 4
- 238000005406 washing Methods 0.000 claims description 3
- 239000012535 impurity Substances 0.000 abstract description 21
- 239000007789 gas Substances 0.000 description 78
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 21
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 14
- 229910052742 iron Inorganic materials 0.000 description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000007670 refining Methods 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 7
- 230000005587 bubbling Effects 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 7
- 239000011261 inert gas Substances 0.000 description 7
- 239000012159 carrier gas Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 239000000460 chlorine Substances 0.000 description 5
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 5
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- 230000005496 eutectics Effects 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000007664 blowing Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000005192 partition Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 150000003376 silicon Chemical class 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 229910001872 inorganic gas Inorganic materials 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 238000009991 scouring Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 235000011470 Adenanthera pavonina Nutrition 0.000 description 1
- 240000001606 Adenanthera pavonina Species 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- -1 CaCO is used Chemical compound 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- BAFMBEZERVBCML-UHFFFAOYSA-N Cl[Cl](Cl)(Cl)Cl Chemical compound Cl[Cl](Cl)(Cl)Cl BAFMBEZERVBCML-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 238000003723 Smelting Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005660 chlorination reaction Methods 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 238000004320 controlled atmosphere Methods 0.000 description 1
- 238000010502 deborylation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 210000003746 feather Anatomy 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000002354 inductively-coupled plasma atomic emission spectroscopy Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910001510 metal chloride Inorganic materials 0.000 description 1
- 229910001512 metal fluoride Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 229910001948 sodium oxide Inorganic materials 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/037—Purification
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Description
Claims
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008535419A JP5210167B2 (ja) | 2006-09-29 | 2007-09-26 | 珪素の精製方法 |
AU2007298104A AU2007298104A1 (en) | 2006-09-29 | 2007-09-26 | Method for purification of silicon, silicon, and solar cell |
EP07828444A EP2072464A4 (en) | 2006-09-29 | 2007-09-26 | PROCESS FOR CLEANING SILICON, SILICON AND SOLAR CELL |
CA002667999A CA2667999A1 (en) | 2006-09-29 | 2007-09-26 | Method for purification of silicon, silicon, and solar cell |
US12/413,563 US20100202954A1 (en) | 2006-09-29 | 2009-03-29 | Method for manufacturing of silicon, silicon, and solar cell |
NO20091690A NO20091690L (no) | 2006-09-29 | 2009-04-28 | Metode for raffinering av silisium og solcelle |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006268631 | 2006-09-29 | ||
JP2006-268631 | 2006-09-29 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/413,563 Continuation US20100202954A1 (en) | 2006-09-29 | 2009-03-29 | Method for manufacturing of silicon, silicon, and solar cell |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008035799A1 true WO2008035799A1 (fr) | 2008-03-27 |
Family
ID=39200620
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2007/068698 WO2008035799A1 (fr) | 2006-09-29 | 2007-09-26 | Procédé de purification du silicium, silicium et cellule solaire |
Country Status (9)
Country | Link |
---|---|
US (1) | US20100202954A1 (ja) |
EP (1) | EP2072464A4 (ja) |
JP (1) | JP5210167B2 (ja) |
KR (1) | KR20090064591A (ja) |
CN (1) | CN101588992A (ja) |
AU (1) | AU2007298104A1 (ja) |
CA (1) | CA2667999A1 (ja) |
NO (1) | NO20091690L (ja) |
WO (1) | WO2008035799A1 (ja) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010052959A (ja) * | 2008-08-26 | 2010-03-11 | Shin-Etsu Chemical Co Ltd | 高純度シリコンの製造方法及び製造装置並びに高純度シリコン |
WO2010119502A1 (ja) * | 2009-04-14 | 2010-10-21 | 信越化学工業株式会社 | 金属珪素の精製方法 |
WO2011001919A1 (ja) * | 2009-07-03 | 2011-01-06 | 三菱化学株式会社 | シリコンの製造方法、シリコンおよび太陽電池用パネル |
CN101941701A (zh) * | 2010-09-20 | 2011-01-12 | 兰州蓝星有限公司 | 钢钎蘸试法判定金属硅精炼终点方法 |
WO2010062735A3 (en) * | 2008-11-03 | 2011-05-05 | Crystal Systems, Inc. | Method and apparatus for refining metallurgical grade silicon to produce solar grade silicon |
DE102009056731A1 (de) | 2009-12-04 | 2011-06-09 | Rev Renewable Energy Ventures, Inc. | Halogenierte Polysilane und Polygermane |
JP2011529841A (ja) * | 2008-08-01 | 2011-12-15 | シュパウント プライベート ソシエテ ア レスポンサビリテ リミテ | 金属ケイ素から非金属不純物を除去する方法 |
WO2012086544A1 (ja) * | 2010-12-20 | 2012-06-28 | 三菱化学株式会社 | シリコンの製造方法及び製造装置、シリコンウェハー、並びに、太陽電池用パネル |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011079485A1 (zh) * | 2009-12-31 | 2011-07-07 | 江苏中能硅业科技发展有限公司 | 硅单质的生产方法及生产设备 |
DE102010053693A1 (de) * | 2010-12-08 | 2012-06-14 | Adensis Gmbh | Verfahren zur chemischen Reinigung von metallurgischem Silizium und Vorrichtung zur Durchführung des Verfahrens |
DE102011100884B4 (de) * | 2011-05-08 | 2015-03-05 | Centrotherm Photovoltaics Ag | Verfahren und vorrichtung zum entfernen von verunreinigungen aus metallurgischem silizium |
DE102011112662B4 (de) * | 2011-05-08 | 2015-04-09 | Centrotherm Photovoltaics Ag | Verfahren zum Behandeln von metallurgischem Silizium |
CN102642838B (zh) * | 2012-04-28 | 2014-10-15 | 中国科学院福建物质结构研究所 | 采用火法冶金与湿法冶金连用技术提纯高纯硅材料的方法 |
CN104704149A (zh) | 2012-05-31 | 2015-06-10 | 德克萨斯大学系统董事会 | 由熔融盐中的二氧化硅通过电沉积在金属上制备薄膜太阳能级硅 |
WO2017062571A2 (en) | 2015-10-09 | 2017-04-13 | Milwaukee Silicon, Llc | Purified silicon, devices and systems for producing same |
CN107043955A (zh) * | 2017-01-09 | 2017-08-15 | 常州天合光能有限公司 | 一种活性气体辅助生长晶体硅的方法 |
US11181325B2 (en) * | 2019-12-23 | 2021-11-23 | Valgroup S.A. | System for the production of molten salt used as a heat transfer medium for a pyrolysis system |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5510500A (en) | 1978-07-11 | 1980-01-24 | Comp Generale Electricite | Manufactre and apparatus for polycrystal silicon |
JPH04193706A (ja) | 1990-11-28 | 1992-07-13 | Kawasaki Steel Corp | シリコンの精製方法 |
JPH05330815A (ja) | 1992-05-27 | 1993-12-14 | Kawasaki Steel Corp | シリコンの精製方法 |
JPH10251010A (ja) * | 1997-03-14 | 1998-09-22 | Kawasaki Steel Corp | 太陽電池用シリコン |
JP2000302434A (ja) | 1999-04-15 | 2000-10-31 | Nippon Petrochem Co Ltd | フッ化金属類を使用した四フッ化ケイ素の除去方法および回収方法 |
JP2003238138A (ja) | 2002-02-20 | 2003-08-27 | Sharp Corp | シリコンの精製方法およびシリコンの精製装置 |
JP2003277040A (ja) * | 2002-03-19 | 2003-10-02 | Sharp Corp | シリコンの精製方法および該方法により精製したシリコンを用いて製造する太陽電池 |
JP2004535354A (ja) | 2001-07-23 | 2004-11-25 | アンヴァンシル | 中純度金属シリコンとその製錬法 |
JP2006160575A (ja) | 2004-12-09 | 2006-06-22 | Sharp Corp | シリコンの精製方法およびシリコン |
JP2006240964A (ja) * | 2005-03-07 | 2006-09-14 | Nippon Steel Corp | 高純度シリコンの製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NO152551C (no) * | 1983-02-07 | 1985-10-16 | Elkem As | Fremgangsmaate til fremstilling av rent silisium. |
DE3635064A1 (de) * | 1986-10-15 | 1988-04-21 | Bayer Ag | Verfahren zur raffination von silicium und derart gereinigtes silicium |
DE3727646A1 (de) * | 1987-08-19 | 1989-03-02 | Bayer Ag | Verfahren zur kontinuierlichen raffination von silicium |
-
2007
- 2007-09-26 JP JP2008535419A patent/JP5210167B2/ja not_active Expired - Fee Related
- 2007-09-26 AU AU2007298104A patent/AU2007298104A1/en not_active Abandoned
- 2007-09-26 CA CA002667999A patent/CA2667999A1/en not_active Abandoned
- 2007-09-26 WO PCT/JP2007/068698 patent/WO2008035799A1/ja active Application Filing
- 2007-09-26 EP EP07828444A patent/EP2072464A4/en not_active Withdrawn
- 2007-09-26 CN CNA2007800420612A patent/CN101588992A/zh active Pending
- 2007-09-26 KR KR1020097008627A patent/KR20090064591A/ko not_active Application Discontinuation
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2009
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Also Published As
Publication number | Publication date |
---|---|
KR20090064591A (ko) | 2009-06-19 |
NO20091690L (no) | 2009-06-19 |
EP2072464A1 (en) | 2009-06-24 |
JP5210167B2 (ja) | 2013-06-12 |
JPWO2008035799A1 (ja) | 2010-01-28 |
CA2667999A1 (en) | 2008-03-27 |
EP2072464A4 (en) | 2010-09-01 |
AU2007298104A1 (en) | 2008-03-27 |
CN101588992A (zh) | 2009-11-25 |
US20100202954A1 (en) | 2010-08-12 |
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