NO20091690L - Metode for raffinering av silisium og solcelle - Google Patents
Metode for raffinering av silisium og solcelleInfo
- Publication number
- NO20091690L NO20091690L NO20091690A NO20091690A NO20091690L NO 20091690 L NO20091690 L NO 20091690L NO 20091690 A NO20091690 A NO 20091690A NO 20091690 A NO20091690 A NO 20091690A NO 20091690 L NO20091690 L NO 20091690L
- Authority
- NO
- Norway
- Prior art keywords
- silicon
- chlorine
- mixture
- gas
- solar cells
- Prior art date
Links
- 229910052710 silicon Inorganic materials 0.000 title abstract 5
- 239000010703 silicon Substances 0.000 title abstract 5
- 238000000034 method Methods 0.000 title abstract 3
- 238000007670 refining Methods 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 6
- 239000000203 mixture Substances 0.000 abstract 4
- 229910052801 chlorine Inorganic materials 0.000 abstract 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000000460 chlorine Substances 0.000 abstract 2
- 238000000746 purification Methods 0.000 abstract 2
- 150000003839 salts Chemical class 0.000 abstract 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 abstract 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 abstract 1
- 229910001634 calcium fluoride Inorganic materials 0.000 abstract 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 abstract 1
- 239000000292 calcium oxide Substances 0.000 abstract 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 abstract 1
- 125000001309 chloro group Chemical group Cl* 0.000 abstract 1
- 238000011109 contamination Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 239000005049 silicon tetrachloride Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/037—Purification
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Organic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006268631 | 2006-09-29 | ||
| PCT/JP2007/068698 WO2008035799A1 (fr) | 2006-09-29 | 2007-09-26 | Procédé de purification du silicium, silicium et cellule solaire |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NO20091690L true NO20091690L (no) | 2009-06-19 |
Family
ID=39200620
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO20091690A NO20091690L (no) | 2006-09-29 | 2009-04-28 | Metode for raffinering av silisium og solcelle |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US20100202954A1 (ja) |
| EP (1) | EP2072464A4 (ja) |
| JP (1) | JP5210167B2 (ja) |
| KR (1) | KR20090064591A (ja) |
| CN (1) | CN101588992A (ja) |
| AU (1) | AU2007298104A1 (ja) |
| CA (1) | CA2667999A1 (ja) |
| NO (1) | NO20091690L (ja) |
| WO (1) | WO2008035799A1 (ja) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102008036143A1 (de) * | 2008-08-01 | 2010-02-04 | Berlinsolar Gmbh | Verfahren zum Entfernen von nichtmetallischen Verunreinigungen aus metallurgischem Silicium |
| JP5359119B2 (ja) * | 2008-08-26 | 2013-12-04 | 信越化学工業株式会社 | 高純度シリコンの製造方法 |
| US8329133B2 (en) | 2008-11-03 | 2012-12-11 | Gt Crystal Systems, Llc | Method and apparatus for refining metallurgical grade silicon to produce solar grade silicon |
| WO2010119502A1 (ja) * | 2009-04-14 | 2010-10-21 | 信越化学工業株式会社 | 金属珪素の精製方法 |
| WO2011001919A1 (ja) * | 2009-07-03 | 2011-01-06 | 三菱化学株式会社 | シリコンの製造方法、シリコンおよび太陽電池用パネル |
| DE102009056731A1 (de) | 2009-12-04 | 2011-06-09 | Rev Renewable Energy Ventures, Inc. | Halogenierte Polysilane und Polygermane |
| WO2011079485A1 (zh) * | 2009-12-31 | 2011-07-07 | 江苏中能硅业科技发展有限公司 | 硅单质的生产方法及生产设备 |
| CN101941701B (zh) * | 2010-09-20 | 2012-01-11 | 兰州蓝星有限公司 | 钢钎蘸试法判定金属硅精炼终点方法 |
| DE102010053693A1 (de) * | 2010-12-08 | 2012-06-14 | Adensis Gmbh | Verfahren zur chemischen Reinigung von metallurgischem Silizium und Vorrichtung zur Durchführung des Verfahrens |
| WO2012086544A1 (ja) * | 2010-12-20 | 2012-06-28 | 三菱化学株式会社 | シリコンの製造方法及び製造装置、シリコンウェハー、並びに、太陽電池用パネル |
| DE102011112662B4 (de) * | 2011-05-08 | 2015-04-09 | Centrotherm Photovoltaics Ag | Verfahren zum Behandeln von metallurgischem Silizium |
| DE102011100884B4 (de) * | 2011-05-08 | 2015-03-05 | Centrotherm Photovoltaics Ag | Verfahren und vorrichtung zum entfernen von verunreinigungen aus metallurgischem silizium |
| CN102642838B (zh) * | 2012-04-28 | 2014-10-15 | 中国科学院福建物质结构研究所 | 采用火法冶金与湿法冶金连用技术提纯高纯硅材料的方法 |
| US10147836B2 (en) | 2012-05-31 | 2018-12-04 | Board Of Regents Of The University Of Texas System | Production of thin film solar grade silicon on metals by electrodeposition from silicon dioxide in a molten salt |
| MA46932A (fr) | 2015-10-09 | 2019-10-09 | Milwaukee Silicon Llc | Silicium purifié, dispositifs et systèmes permattant sa production |
| CN107043955A (zh) * | 2017-01-09 | 2017-08-15 | 常州天合光能有限公司 | 一种活性气体辅助生长晶体硅的方法 |
| US11181325B2 (en) * | 2019-12-23 | 2021-11-23 | Valgroup S.A. | System for the production of molten salt used as a heat transfer medium for a pyrolysis system |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2430917A1 (fr) * | 1978-07-11 | 1980-02-08 | Comp Generale Electricite | Procede et dispositif d'elaboration de silicium polycristallin |
| NO152551C (no) * | 1983-02-07 | 1985-10-16 | Elkem As | Fremgangsmaate til fremstilling av rent silisium. |
| DE3635064A1 (de) * | 1986-10-15 | 1988-04-21 | Bayer Ag | Verfahren zur raffination von silicium und derart gereinigtes silicium |
| DE3727646A1 (de) * | 1987-08-19 | 1989-03-02 | Bayer Ag | Verfahren zur kontinuierlichen raffination von silicium |
| JPH04193706A (ja) * | 1990-11-28 | 1992-07-13 | Kawasaki Steel Corp | シリコンの精製方法 |
| JPH05330815A (ja) | 1992-05-27 | 1993-12-14 | Kawasaki Steel Corp | シリコンの精製方法 |
| JPH10251010A (ja) * | 1997-03-14 | 1998-09-22 | Kawasaki Steel Corp | 太陽電池用シリコン |
| JP2000302434A (ja) | 1999-04-15 | 2000-10-31 | Nippon Petrochem Co Ltd | フッ化金属類を使用した四フッ化ケイ素の除去方法および回収方法 |
| FR2827592B1 (fr) * | 2001-07-23 | 2003-08-22 | Invensil | Silicium metallurgique de haute purete et procede d'elaboration |
| JP2003238138A (ja) * | 2002-02-20 | 2003-08-27 | Sharp Corp | シリコンの精製方法およびシリコンの精製装置 |
| JP2003277040A (ja) * | 2002-03-19 | 2003-10-02 | Sharp Corp | シリコンの精製方法および該方法により精製したシリコンを用いて製造する太陽電池 |
| JP4632769B2 (ja) | 2004-12-09 | 2011-02-16 | シャープ株式会社 | シリコンの精製方法 |
| JP4880236B2 (ja) * | 2005-03-07 | 2012-02-22 | 新日鉄マテリアルズ株式会社 | 高純度シリコンの製造方法 |
-
2007
- 2007-09-26 JP JP2008535419A patent/JP5210167B2/ja not_active Expired - Fee Related
- 2007-09-26 KR KR1020097008627A patent/KR20090064591A/ko not_active Application Discontinuation
- 2007-09-26 AU AU2007298104A patent/AU2007298104A1/en not_active Abandoned
- 2007-09-26 CA CA002667999A patent/CA2667999A1/en not_active Abandoned
- 2007-09-26 EP EP07828444A patent/EP2072464A4/en not_active Withdrawn
- 2007-09-26 WO PCT/JP2007/068698 patent/WO2008035799A1/ja active Application Filing
- 2007-09-26 CN CNA2007800420612A patent/CN101588992A/zh active Pending
-
2009
- 2009-03-29 US US12/413,563 patent/US20100202954A1/en not_active Abandoned
- 2009-04-28 NO NO20091690A patent/NO20091690L/no not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| EP2072464A4 (en) | 2010-09-01 |
| JPWO2008035799A1 (ja) | 2010-01-28 |
| US20100202954A1 (en) | 2010-08-12 |
| JP5210167B2 (ja) | 2013-06-12 |
| AU2007298104A1 (en) | 2008-03-27 |
| WO2008035799A1 (fr) | 2008-03-27 |
| CA2667999A1 (en) | 2008-03-27 |
| CN101588992A (zh) | 2009-11-25 |
| EP2072464A1 (en) | 2009-06-24 |
| KR20090064591A (ko) | 2009-06-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FC2A | Withdrawal, rejection or dismissal of laid open patent application |