WO2008026743A1 - Film conducteur de liaison de gradient, ligne de transmission à haute fréquence et filtre à haute fréquence associé - Google Patents

Film conducteur de liaison de gradient, ligne de transmission à haute fréquence et filtre à haute fréquence associé Download PDF

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Publication number
WO2008026743A1
WO2008026743A1 PCT/JP2007/067075 JP2007067075W WO2008026743A1 WO 2008026743 A1 WO2008026743 A1 WO 2008026743A1 JP 2007067075 W JP2007067075 W JP 2007067075W WO 2008026743 A1 WO2008026743 A1 WO 2008026743A1
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WIPO (PCT)
Prior art keywords
metal thin
film
conductive film
thin film
gradient
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PCT/JP2007/067075
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English (en)
Japanese (ja)
Inventor
Seiji Kagawa
Original Assignee
Seiji Kagawa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiji Kagawa filed Critical Seiji Kagawa
Priority to JP2008532139A priority Critical patent/JP5186375B2/ja
Publication of WO2008026743A1 publication Critical patent/WO2008026743A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P3/00—Waveguides; Transmission lines of the waveguide type
    • H01P3/02—Waveguides; Transmission lines of the waveguide type with two longitudinal conductors
    • H01P3/06—Coaxial lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P3/00—Waveguides; Transmission lines of the waveguide type
    • H01P3/02—Waveguides; Transmission lines of the waveguide type with two longitudinal conductors
    • H01P3/023—Fin lines; Slot lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P3/00—Waveguides; Transmission lines of the waveguide type
    • H01P3/02—Waveguides; Transmission lines of the waveguide type with two longitudinal conductors
    • H01P3/026—Coplanar striplines [CPS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P3/00—Waveguides; Transmission lines of the waveguide type
    • H01P3/02—Waveguides; Transmission lines of the waveguide type with two longitudinal conductors
    • H01P3/08—Microstrips; Strip lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P3/00—Waveguides; Transmission lines of the waveguide type
    • H01P3/12—Hollow waveguides
    • H01P3/122—Dielectric loaded (not air)
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0213—Electrical arrangements not otherwise provided for
    • H05K1/0237—High frequency adaptations
    • H05K1/0242—Structural details of individual signal conductors, e.g. related to the skin effect
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0203—Fillers and particles
    • H05K2201/0263—Details about a collection of particles
    • H05K2201/0269—Non-uniform distribution or concentration of particles
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/0332—Structure of the conductor
    • H05K2201/0335—Layered conductors or foils
    • H05K2201/0338—Layered conductor, e.g. layered metal substrate, layered finish layer, layered thin film adhesion layer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/0332—Structure of the conductor
    • H05K2201/0364—Conductor shape
    • H05K2201/037—Hollow conductors, i.e. conductors partially or completely surrounding a void, e.g. hollow waveguides

Definitions

  • the present invention relates to a conductive film in which two types of metal thin films are joined with a composition gradient, and a high-frequency transmission line and a high-frequency filter using the conductive film.
  • High-frequency transmission lines are used in information processing equipment such as personal computers and wireless communication equipment such as mobile phones.
  • a coaxial cable having a dielectric substrate 200 interposed between a linear inner conductor 100 and an outer conductor 100 ′ as shown in FIG. 26 has a square cross section as shown in FIG. A waveguide consisting of 100 metal tubes is used.
  • coaxial cables and waveguides transmit high-frequency signals with a predetermined attenuation factor, and the transmission characteristics are isotropic (same in both directions).
  • a high-frequency transmission line (Fig. 28) provided with a pair of strip-like conductor lines 110, 110 parallel to one surface of the dielectric substrate 210, and ground conductors 120, 120 provided on both surfaces of the dielectric substrate 210, High-frequency transmission line (Fig. 29) with conductor 110 on the part, high-frequency transmission line with ground conductor 120 on one side of dielectric substrate 210 and band-like conductor 110 on the other side (Fig. 30), ceramic dielectric substrate
  • a high-frequency transmission line (Fig. 31) having a belt-like conductor 110 on one side of 210 and ground conductors 120, 120 on both sides.
  • Japanese Patent Application Laid-Open No. 7-336113 discloses a high-frequency transmission line having a conductor film having a film thickness of 1.14 to 2.75 times the skin depth at the operating frequency, and having a structure shown in FIGS. 28 and 31, for example. I'm going.
  • the high-frequency transmission rate (input amplitude / output amplitude) increases according to the frequency. Or zero, and there is no difference in characteristics (with anisotropy) depending on the transmission direction of the high-frequency signal! /.
  • a high-frequency filter with extremely good demultiplexing characteristics can be obtained.
  • an object of the present invention is to provide a conductive film having a frequency dependency of a high-frequency transmission rate, a high-frequency transmission line having a conductive film, and a high-frequency filter.
  • the present inventor has found that, in a conductive film having at least two metal thin films on a plastic film, the boundary between the metal thin films is a gradient composition layer.
  • the inventors have found that the frequency dependence of the rate can be obtained, and have arrived at the present invention.
  • the gradient bonded conductive film of the present invention has first and second metal thin films having different electric resistances on at least one surface of a plastic film, and has a boundary force between the first and second metal thin films. It has a gradient composition layer whose composition ratio changes in the thickness direction.
  • the boundary between the plastic film and the metal thin film is also a gradient composition layer in which the ratio of the metal decreases toward the plastic film. It is preferable.
  • the first metal thin film is preferably a vapor deposition film, a plating film, or a foil
  • the second metal thin film is preferably a vapor deposition film or a plating film.
  • the second metal thin film is more than the first metal thin film.
  • X 10 Has a large electrical resistance of 6 ⁇ 'cm or more.
  • the first metal thin film is made of copper and the second metal thin film is made of nickel.
  • the first metal thin film has a large electric resistance 2 X 10- 6 ⁇ 'cm or more than the second metal thin film.
  • the first metal thin film is made of nickel and the second metal thin film is made of copper.
  • the thickness of the metal thin film having the smaller electric resistance is set to the electric resistance.
  • the ratio is preferably 2/1 to 20/1 with respect to the thickness of the metal thin film having a larger thickness. In particular, when both the first and second metal thin films are vapor-deposited films, this ratio is more preferably 3/1 to 15/1.
  • the thickness of the metal thin film having the larger electric resistance is 10 to 70 nm, and the thickness force of the metal thin film having the smaller electric resistance is .1. ⁇ 1 m is preferred.
  • a plurality of fine holes having an average opening diameter of 0.5 to 50 m are formed in at least the first and second metal thin films.
  • the average distribution density of the micropores is preferably 1 ⁇ 10 4 to 2 ⁇ 10 5 holes / cm 2 .
  • the plastic film is preferably made of polyethylene terephthalate or polyimide.
  • the high-frequency transmission line of the present invention includes two spaced-apart inclined junction conductive films in parallel.
  • the two graded junction conductive films are either (1) on the same surface of the dielectric substrate, (2) on the opposite inner surface of the U-shaped dielectric substrate, or (3) a dielectric having an L-shaped cross section. It is preferable to be placed on one of the orthogonal inner surfaces of the substrate.
  • a high-frequency filter of the present invention includes the above-described high-frequency transmission line.
  • the gradient junction conductive film of the present invention has a frequency dependency of the high-frequency transmission rate, a desired high-frequency signal can be obtained when used in a high-frequency transmission line used in various information processing equipment and wireless communication equipment such as aircraft and automobiles. Can be transmitted efficiently, and transmission of high-frequency signals of a specific frequency can be made zero.
  • a high-frequency transmission line is expected to be applied as an antenna, for example, an antenna for an electronic tag.
  • a high-frequency filter having a simple structure that can transmit a transmission signal but does not transmit a reception signal is obtained.
  • FIG. 1 (a) is a cross-sectional view showing a gradient junction conductive film according to one embodiment of the present invention.
  • FIG. 1 (b) is an enlarged cross-sectional view showing a portion A in FIG. 1 (a).
  • FIG. 1 (c) is an enlarged cross-sectional view schematically showing an A ′ portion of FIG. 1 (b).
  • FIG. 1 (d) is an enlarged cross-sectional view schematically showing a portion A ′′ in FIG. 1 (b).
  • FIG. 2 (a) is a cross-sectional view showing a gradient junction conductive film according to another embodiment of the present invention.
  • FIG. 2 (b) is an enlarged cross-sectional view showing a portion B in FIG. 2 (a).
  • FIG. 2 (c) is an enlarged sectional view schematically showing a B ′ portion in FIG. 2 (b).
  • FIG. 2 (d) is an enlarged cross-sectional view schematically showing a portion B "in FIG. 2 (b).
  • 3 (a)] is a cross-sectional view showing a gradient junction conductive film according to still another embodiment of the present invention.
  • 3 (b)] is an enlarged sectional view schematically showing a portion C of FIG. 3 (a).
  • FIG. 4 (a)] is a cross-sectional view showing a gradient junction conductive film according to still another embodiment of the present invention.
  • 4 (b)] is an enlarged cross-sectional view schematically showing a portion D in FIG. 4 (a).
  • FIG. 5 (a)] is a cross-sectional view showing a gradient junction conductive film according to still another embodiment of the present invention.
  • 5 (b)] is an enlarged cross-sectional view schematically showing an E portion of FIG. 5 (a).
  • FIG. 6 A perspective view showing a gradient junction conductive film according to still another embodiment of the present invention.
  • FIG. 7 A perspective view showing a gradient junction conductive film according to still another embodiment of the present invention.
  • FIG. 8 A perspective view showing a gradient junction conductive film according to still another embodiment of the present invention.
  • FIG. 9 is a perspective view showing a high-frequency transmission line according to an embodiment of the present invention.
  • FIG. 10 is a perspective view showing a high-frequency transmission line according to another embodiment of the present invention.
  • FIG. 11 is a perspective view showing a high-frequency transmission line according to still another embodiment of the present invention.
  • FIG. 12 is a perspective view showing a high-frequency transmission line according to still another embodiment of the present invention.
  • FIG. 13 is a perspective view showing a high-frequency transmission line according to still another embodiment of the present invention.
  • 14 A schematic perspective view showing a high-frequency filter according to an embodiment of the present invention.
  • FIG. 15 is a schematic diagram showing a state in which an oscillator and a receiver are connected to a high-frequency transmission line.
  • Sono 16 is a circuit diagram schematically showing the configuration of the oscillator used to measure the high-frequency transmissibility.
  • Sono 17 (a)] Shows the signal pattern when the oscillator power is also transmitted so that the signal is output from the (+) side.
  • 17 (b)] is a schematic diagram showing the signal pattern when the oscillator force is transmitted so as to be output from the signal force S ( ⁇ ) side.
  • FIG. 19 is a partial cross-sectional view showing a connection configuration to a high-frequency transmission line in Example 2.
  • FIG. 22 is a graph showing the relationship between frequency and high-frequency transmissibility for the high-frequency transmission line of Example 4.
  • FIG. 23 is a graph showing the relationship between frequency and high-frequency transmissibility for the high-frequency transmission line of Comparative Example 1.
  • FIG. 24 is a graph showing the relationship between frequency and high-frequency transmissibility for the high-frequency transmission line of Comparative Example 2.
  • FIG. 25 is a graph showing the relationship between frequency and high-frequency transmissibility for the high-frequency transmission line of Comparative Example 3.
  • FIG. 26 is a perspective view showing an example of a conventional high-frequency transmission line.
  • FIG. 27 is a perspective view showing another example of a conventional high-frequency transmission line.
  • FIG. 28 is a perspective view showing still another example of a conventional high-frequency transmission line.
  • FIG. 29 is a perspective view showing still another example of a conventional high-frequency transmission line.
  • FIG. 30 is a perspective view showing still another example of a conventional high-frequency transmission line.
  • FIG. 31 is a perspective view showing still another example of a conventional high-frequency transmission line.
  • FIG. 1 shows an example of the gradient junction conductive film of the present invention.
  • the first and second metal thin films 11a and l ib are formed on one side of the plastic film 10, and the boundary between the two metal thin films 11a and l ib is between the first metal and the second metal.
  • the gradient composition layer 12 ′ has a composition ratio that changes in the thickness direction.
  • the metal composition ratio is preferably changed substantially continuously.
  • the boundary portion between the plastic film 10 and the metal thin film 11a is the inclined composition layer 12 in which the ratio of the metal decreases from the metal thin film 11a to the plastic film 10.
  • the ratio of the metal changes substantially continuously.
  • FIG. 1 schematically shows a state in which the second metal atom l ib ′ has partially entered the first metal atom 11 a ′, and (d) shows the first metal atom.
  • FIG. 2 shows another example of a gradient junction conductive film.
  • the gradient bonded conductive film of this example is the same as that shown in FIG. 1 except that the first metal thin film 1 la is bonded to the plastic film 10 via the adhesive layer 13. Since the adhesive layer 13 is provided, the first metal thin film 11a may be a metal foil.
  • C of FIG.
  • FIG. 2 schematically shows a state in which the second metal atom l ib ′ has partially entered between the first metal atoms 11a ′, and (d) is due to the adhesive layer 13.
  • Fig. 6 schematically shows that the first metal atom 11a 'does not enter between the plastic molecules 10' of the film 10.
  • FIG. 3 shows still another example of the gradient junction conductive film.
  • the gradient junction conductive film of this example is the same as that shown in FIG. 1 except that a large number of micro holes 14 are provided in the first and second metal thin films 11a and ib.
  • the large number of fine holes 14 are formed by a roll having diamond fine particles on the surface, so that it is not necessary to penetrate through the force S having various depths and the plastic film 10.
  • FIG. 4 shows still another example of the gradient junction conductive film.
  • the first and second metal thin films 11a and ib are formed on both sides of the plastic film 10 so that the first and second metal thin films 11a, This is the same as that shown in FIG. 1, except that a large number of micropores 14 are provided in l ib.
  • FIG. 5 shows still another example of the gradient junction conductive film.
  • the first and second metal thin films 11a and l ib are formed on both surfaces of the plastic film 10, and a large number of micro holes 14 substantially penetrate the conductive film. It is considered that the metal thin film 11a, ib is plastically deformed during the formation of the through-hole and enters the fine hole.
  • FIG. 6 shows still another example of the gradient junction conductive film.
  • the gradient bonded conductive film of this example is the same as that shown in FIG. 1 except that two laminated metal strip thin films (consisting of first and second metal thin films 11a and ib) are formed on one surface of the plastic film 10 in parallel. It is the same as shown.
  • FIG. 7 shows still another example of the gradient junction conductive film.
  • the gradient junction conductive film has one laminated metal strip thin film (consisting of first and second metal thin films 11a and ib) formed on one surface of the plastic film 10, and the laminated metal thin film on the other surface. 1 is the same as that shown in FIG. 1, except that the first and second metal thin films 1 la and l ib are formed like this.
  • FIG. 8 shows still another example of the gradient junction conductive film.
  • the gradient junction conductive film has three laminated metal strips (one each of the first and second metal thin films) on one surface of the plastic film 10. 1 is the same as that shown in FIG. 1 except that the film 11a and l ib are provided.
  • the resin that constitutes the plastic film 10 is not particularly limited. ABS resin, polyurethane, fluororesin, polyolefin (polyethylene, polypropylene, etc.), polyvinyl chloride, thermoplastic elastomer, etc.
  • High heat-resistant resins such as polyurenoresanolev and polyetheretherketone are preferred, particularly polyesters and polyimides.
  • polyester examples include polyethylene terephthalate (PET), polybutylene terephthalate (PBT), polyethylene naphthalate (PEN), and polybutylene naphthalate (PBN).
  • PET polyethylene terephthalate
  • PBT polybutylene terephthalate
  • PEN polyethylene naphthalate
  • PBN polybutylene naphthalate
  • PET film and PBT film are commercially available at a low price!
  • a PET film is a saturated polyester film basically composed of ethylene glycol and terephthalic acid.
  • a diol component other than ethylene glycol and a cambonic acid component other than terephthalic acid may be included as long as the characteristics are not impaired.
  • Commercial PET film has a dielectric constant of about 3 (10 6 Hz), a dielectric loss tangent of about 0.01 to 0.02 (10 6 Hz), a melting point of about 250 to 270 ° C, and a glass transition of about 70 to 80 ° C. Have temperature.
  • the dielectric constant and dielectric loss tangent are measured by ASTM D150, the melting point is measured by ASTM D4591, and the glass transition temperature is measured by JIS K7121 (the same applies hereinafter).
  • PBT film is basically a saturated polyester film consisting of 1,4-butanediol and terephthalic acid. As long as the physical properties are not impaired, a diol component other than 1,4-butanediol and a cambonic acid component other than terephthalic acid may be included.
  • Commercially available PBT finoleum has a dielectric constant of about 3-4 (10 6 Hz), a dissipation factor of about 0.02 (10 6 Hz), a melting point of about 220-230 ° C, and a glass of about 20-45 ° C. Has a transition temperature.
  • Thermal contraction rate of PBT film (to 150 ° C It is preferable that the MD (longitudinal direction) and TD (transverse direction) are 2% or less for measurement under conditions of heating for 10 minutes! /.
  • a PBT film having a thermal shrinkage rate of 2% or less can be produced, for example, by the air-cooled inflation molding method described in JP-A-2004-268257.
  • Polyesterolene Polyphenylene sanorefinide, Polyamide, Polyimide, Polyamide, Imide, Polyetherenorephone, Polyetherenoleketone, Polycarbonate, Polyurethane, Fluororesin, Polyolefin, Polychlorinated bur, It may contain a thermoplastic resin such as a thermoplastic elastomer, etc.
  • the content of other thermoplastic resins is preferably 5 to 20% by mass with 100% by mass of the entire polyester.
  • stabilizers such as plasticizers, antioxidants and UV absorbers, antistatic agents, surface activity
  • Additives such as additives, coloring agents such as dyes and pigments, lubricants for improving fluidity, and inorganic fillers may be included as appropriate.
  • Polyimide basically consists of a dehydration condensation reaction product of aromatic tetracarboxylic dianhydride and aromatic diamine, and a dehydration condensation reaction product of pyromellitic dianhydride and 4,4'-diaminodiphenyl ether. What has a main component is preferable.
  • Commercially available polyimide has a dielectric constant of about 3.4 (10 6 Hz) and a dielectric loss tangent of about 0.01 (10 6 Hz).
  • the polyimide may contain other thermoplastic resins and additives. The content of the other thermoplastic resin is preferably 5 to 20% by mass with 100% by mass of the entire polyimide.
  • the plastic film 10 is not limited to a single layer, and may be a laminated film.
  • a laminated film can be formed by thermally fusing different plastic films or bonding them through an adhesive layer such as polyethylene.
  • the thickness of the plastic film 10 is not particularly limited, but about 4 to 5001 is suitable for practical use. It is technically difficult to make the thickness of the plastic film 10 less than about 4 m, and if it exceeds about 50 m, the gradient junction conductive film becomes too thick.
  • the first and second metal thin films 11a and lib have different electric resistances.
  • the electric resistance of the first metal thin film 11a may be larger than that of the second metal thin film lib, or vice versa.
  • First ⁇ beauty second metal thin film 11a, the electrical resistance difference lib is a normal temperature 2X10- 6 ⁇ 'is preferably in the range cm or more instrument 4 X 10- 6 ⁇ ' cm and more preferably at least.
  • the metal forming the first and second metal thin films 11a, lib can be selected from the above so as to have different electric resistances.
  • the first metal thin film 11a is made of copper and / or aluminum
  • the second metal thin film lib is at least one selected from the group consisting of nickel, zinc, tin, titanium, cobalt, iron and chromium.
  • the first metal thin film 11a is made of at least one selected from the group consisting of nickel, zinc, tin, titanium, cobalt, iron and chromium
  • the second metal thin film lib is made of copper and / or aluminum.
  • the first metal thin film 11a is made of copper
  • the second metal thin film lib is made of nickel
  • the first metal thin film 11a is made of nickel
  • the second metal thin film 1lb is made of copper. I like it!
  • the thickness of the metal thin film with the smaller electric resistance Is preferably set to a ratio of 2/1 to 20/1 with respect to the thickness of the metal thin film having the larger electric resistance.
  • this ratio be 3/1 to 15/1.
  • the first metal thin film 1 la is larger than the second metal thin film 1 lb! /, If it has electric resistance, and vice versa!
  • the thickness of the metal thin film is preferably 0.1 to 35,1 m, and the electric resistance is large!
  • the thickness of the metal thin film is preferably 0.01 to 20 ⁇ m! / ⁇ .
  • the thickness of the metal thin film with the smaller electrical resistance is preferably 0.1 to 1 m, more preferably 0.15 to 0.701. 0.2 to 0.601 is most preferable, and the thickness of the metal thin film having the larger electric resistance is preferably 10 to 70 nm, more preferably 20 to 60 mm. If the thickness of the metal vapor-deposited film with the smaller electrical resistance is less than 0.1 m, the high-frequency transmission characteristics are poor. On the other hand, if it exceeds 1 m, the frequency dependency of the high-frequency transmission rate is poor.
  • the first metal thin film 11a is preferably formed by vapor deposition, plating or foil
  • the second metal thin film l ib is preferably formed by vapor deposition or plating.
  • Metal vapor deposited films are usually crystalline and have high purity and high oxidation resistance.
  • the metal atoms 11a ′ partially enter between the plastic molecules 10 ′ of the film 10. Accordingly, the composition ratio (concentration) of the metal atom 11a ′ decreases from the metal thin film 11a to the plastic film 10.
  • the reduction in the composition ratio of the metal atoms 11a ′ is preferably almost continuous in the thickness direction. “Substantially continuous” means that the composition ratio of the metal atoms 11a ′ in the thickness direction changes substantially monotonically. This condition does not necessarily satisfy this condition locally.
  • the concentration of the metal atom 11a ′ is lowered, it is considered that an amorphous phase is formed! /.
  • the second metal atom l ib ′ partially enters between the first metal 11a ′. Therefore, the composition ratio (concentration) of the first metal 11a ′ decreases from the first metal thin film 11a to the second metal thin film l ib, and the second metal atom l ib ′ decreases from the second metal thin film 1 lb. The first metal film decreases over 1 la. Even in the gradient composition layer 12 ′, it is preferable that the change in the metal composition ratio is substantially continuous in the thickness direction. In the graded composition layer 12 ′, the concentration of both metal atoms 11a ′ and l ib ′ is gradually changed. It is done.
  • the fine holes 14 in the gradient junction conductive film. As shown in FIGS. 3 and 4, it is preferable that the fine holes 14 penetrate at least the metal thin films 11a and ib. The fine holes 14 may reach the middle of the plastic film 10 as long as they penetrate the metal thin films 11a and ib. Further, as shown in FIG. 5, the fine hole 14 may penetrate through the gradient bonding conductive film 1.
  • the average opening diameter of the fine holes 14 is preferably 0.1 to 10001, more preferably 0 to 50 to 50 m. It is technically difficult to make the average opening diameter of the micropores 14 less than 0.1 m. Further, if the average opening diameter of the fine holes 14 exceeds 100 m, the strength of the gradient bonding conductive film 1 may be reduced. In order to have good transmission loss, the upper limit of the average aperture diameter is most preferably 10 m, with 20 111 being particularly preferred. The average opening diameter is obtained by measuring and averaging the diameters of all the fine holes 14 in five regions of 50 m ⁇ 50 m at arbitrary positions of the gradient junction conductive film using an atomic force microscope.
  • the average distribution density of the micropores 14 is preferably 500 / cm 2 or more, more preferably 5 ⁇ 10 3 / cm 2 or more! / ,. If the average distribution density of the fine holes 14 is less than 500 / cm 2 , transmission loss increases. The reason is not clear, but it is presumed that eddy currents are generated in the vicinity of the micropores 14 during transmission of a high-frequency signal. In order to have good transmission loss, the average distribution density of the micropores 14 is particularly preferably 1 ⁇ 10 4 to 3 ⁇ 10 5 / cm 2 , 1 ⁇ 10 4 to 2 ⁇ 10 5 / Most preferred is cm 2 .
  • the average distribution density of the micropores 14 was obtained by counting the number of micropores 14 in five regions of 50 m x 50 m at arbitrary positions of the gradient junction conductive film using an atomic force microscope. Calculate by averaging the values and converting them to the number per 1 cm 2 .
  • the adhesive layer 13 is made of, for example, a polyurethane resin, an epoxy resin, an acrylic resin, an ethylene-vinyl alcohol copolymer (EVA), a polybulacetal-based resin [for example, polybulol formal, polybulbutyral (PVB), modified PVB, etc.] Made of resin, hot melt adhesive, sealant film, etc.
  • a polyurethane resin for example, an epoxy resin, an acrylic resin, an ethylene-vinyl alcohol copolymer (EVA), a polybulacetal-based resin [for example, polybulol formal, polybulbutyral (PVB), modified PVB, etc.] Made of resin, hot melt adhesive, sealant film, etc.
  • a first metal thin film 11a is formed on one or both surfaces of a plastic film 10 by a vapor deposition method, a plating method or a foil bonding method.
  • a thin film l ib is formed between the first metal thin film 11a and the second metal thin film l ib.
  • the gradient composition layer 12 is formed between the plastic film 10 and the first metal thin film 11a.
  • the first metal thin film 11a which also serves as a metal foil, is bonded to the plastic fine film 10, and the second metal thin film l ib is formed by vapor deposition or adhesion. To do.
  • metal vapor deposition can be performed by physical vapor deposition such as vacuum vapor deposition, sputtering, or ion plating, chemical vapor deposition such as plasma CVD, thermal CVD, or photo CVD. From the viewpoint of economy, the vacuum deposition method is preferable.
  • the plastic film 10 may be subjected to a surface treatment that also serves as washing.
  • Surface treatment includes mechanical treatment by blasting, embossing, etc .; physicochemical treatment by corona discharge, plasma, flame treatment, UV irradiation, etc .; chemical treatment by solvent, acidic solution, alkaline solution, etc.
  • the film 10 after the surface treatment may be heated or subjected to vacuum heat treatment to remove moisture or gas in the film 10.
  • the vacuum deposition method may be either a semi-continuous method (a method in which film feeding, vapor deposition and winding are performed in vacuum) or a continuous method (a method in which only vapor deposition is performed in vacuum). Both the metal vapor is condensed in the plastic film 10 or on the first metal thin film 11a under high vacuum of about 10- 2 P a. Immediately after the deposition of the first metal thin film 11a, the second metal thin film l ib is deposited. Is preferred.
  • a plasma CVD method that can form a thin film at a low temperature is preferred.
  • a metal vapor deposition layer is formed by generating a plasma of a low-pressure reaction gas, or a metal vapor deposition layer is formed by decomposing the reaction gas under reduced pressure.
  • metal halides, organometallics, organometallic complexes, metal alcoholates, etc. are used, and reactive gases such as nitrogen, ammonia, dinitrogen monoxide, oxygen, carbon monoxide, methane, hydrogen, etc. are used in helium. Used with a carrier gas such as argon.
  • a copper deposition layer for example, copper acetyl cetate [Cu (ac ac)] is used as a source gas.
  • an aluminum vapor deposition layer for example, trimethylaluminum (A1 (CH 3) 2) is used as a source gas.
  • A1 (CH 3) 2 trimethylaluminum
  • nickel chloride gas is used as a raw material gas.
  • Plating is performed by an electrolytic plating method, an electroless plating method, or the like. Details of the plating method are disclosed in, for example, the “Plating Technology Handbook” (edited by the Technical Committee of the Tokyo Sheet Metal Cooperative Association). After forming the electroless plating layer, the electrolytic plating layer may be formed.
  • a base layer may be provided on the plastic film 10 or the first metal thin film 11a.
  • the underlayer may be a metal deposition layer, a polymer binder layer containing a plating catalyst, a polymer binder layer containing a catalyst precursor, or the like.
  • the catalyst-containing underlayer is, for example, a polymer binder layer impregnated with a Pd catalyst, a polymer binder layer to which reducing metal particles (for example, colloids such as Ni, Co, Rh, and Pd) are added.
  • a conductive underlayer such as an antistatic agent, a metal particle, a resin layer containing carbon, a conductive metal oxide layer, or a metal thin film layer is first formed on the plastic film 10. After providing, it is immersed in an electroless copper plating solution such as a copper sulfate plating bath. Since the composition of the electroless copper plating solution itself is known, its description is omitted.
  • the copper plating layer may be formed only by the electroless plating method, but it is preferable to combine the electroless plating method and the electrolytic plating method in order to increase the efficiency.
  • an alkaline nickel solution is used for electroless nickel plating, and a watt bath, a sulfamic acid bath, or the like is used for electrolytic nickel plating.
  • the metal strip thin films 11a and l ib as shown in Fig. 6 to Fig. 8 are: (i) After the metal thin films 11a and l ib are uniformly formed on the plastic film 10, a photoresist is applied in a strip and etched after exposure. (Ii) A photoresist is applied to the plastic film 10 so as to have a strip-shaped opening in advance, and after exposure, the metal thin film 11a, ib is formed by vapor deposition or plating, and the photoresist layer is removed. It can be formed by a method or the like.
  • porous processing method As shown in FIGS. 3 to 5, when a large number of fine holes 14 are formed in the metal thin films 11a and ib of the gradient junction conductive film, a so-called porous processing method is used.
  • the porous processing method is described in, for example, Japanese Patent No. 20 63411, Japanese Patent No. 2542772, Japanese Patent No. 2643730, Japanese Patent No. 2703151, Japanese Patent Laid-Open No. 9-99492, Japanese Patent Laid-Open No. 9-57860, Japanese Patent Laid-Open No. 2002-059487, etc. ing.
  • the metal thin film 11a, ib is placed on the first roll side between a first roll having a large number of particles with Mohs hardness of 5 or more attached to the surface and a second roll having a smooth surface. Then, the inclined bonding conductive film is passed under a uniform pressing force.
  • the second roll for example, an iron roll, a Ni roll, a Cr roll, a stainless roll, a special steel roll, or the like can be used.
  • the average opening diameter and average distribution density of the fine holes 14 can be adjusted by adjusting the particle diameter and density of the fine particles of the first roll.
  • the pressing force between the first roll and the second roll determines the depth of the fine hole 14 and whether or not it penetrates the gradient bonding conductive film.
  • the fine holes 14 are preferably provided uniformly in the gradient bonding conductive film 1.
  • the wall surface metal thin films 11a and ib of the micropores 14 are plastically deformed to at least partially cover the wall surfaces of the micropores 14.
  • the high-frequency transmission line of the present invention will be described in detail below.
  • two strip-shaped inclined junction conductive films 1 and 1 are arranged in parallel to the upper surface of the dielectric substrate 2.
  • Strip-shaped graded junction conductive films 1 and 1 are graded junction conductive films
  • the membrane 1 is slit by a known method. Since the electric field concentrates between the two strip-shaped gradient junction conductive films 1 and 1, a high-frequency signal can be transmitted efficiently.
  • the dielectric substrate 2 preferably has a convex portion 20 between the two strip-shaped gradient junction conductive films 1 and 1.
  • the strip-like gradient bonding conductive films 1, 1 disposed on the support 2 may have the metal thin film on the top or the bottom.
  • each of the gradient junction conductive films 1 and 1 is appropriately determined according to the frequency and amplitude of the high-frequency signal.
  • the width d is over 10 mm.
  • the distance d between the two strip-like gradient bonding conductive films 1 and 1 is a force S of !! to 10 mm, more preferably 1.5 to 7 mm. If the distance d force is less than S lmm, high-frequency signal transmission is insufficient, while if it exceeds 10 mm, radiation loss is high.
  • the height h of the convex portion 20 is preferably! -10 mm, more preferably 1.5-7 mm.
  • the dielectric forming the support 2 is made of, for example, a resin (which may be the same as the plastic film 10), ceramics such as alumina, or the like. In order to fix the gradient bonding conductive films 1, 1 to the dielectric substrate 2, it is preferable to pass through the adhesive layer 3.
  • two strip-shaped inclined junction conductive films 1 and 1 are disposed on the opposing inner surface of a dielectric substrate 2 having a U-shaped cross section.
  • the electric field concentrates between the two strip-shaped gradient bonding conductive films 1 and 1, and a high-frequency signal can be transmitted efficiently.
  • the two strip-shaped gradient junction conductive films 1 and 1 have the metal thin films 11a and l ib on one side, it is preferable to dispose the metal thin films l ib and l ib so as to face each other.
  • the dielectric substrate 2 is not limited to the shape shown in the figure, as long as two strip-shaped gradient junction conductive films can be disposed opposite to each other.
  • each of the gradient junction conductive films 1 and 1 may be the same as that of the first high-frequency transmission line.
  • the distance d between the two strip-like graded junction conductive films 1 and 1 is: a force S of! ⁇ 10 mm, preferably 1.5 ⁇ 7 mm
  • the distance d is less than mm, the high-frequency signal transmission is insufficient.
  • two strip-shaped inclined junction conductive films 1 and 1 are disposed on the orthogonal inner surface of a dielectric substrate 2 having an L-shaped cross section.
  • the electric field concentrates between the two strip-shaped gradient bonding conductive films 1 and 1, and a high-frequency signal can be transmitted efficiently.
  • the dielectric substrate 2 is not limited to the shape shown in the figure as long as the two strip-shaped gradient junction conductive films 1 and 1 can be arranged so as to be orthogonal to each other.
  • each of the gradient junction conductive films 1 and 1 may be the same as that of the second high-frequency transmission line.
  • the distance d between the two strip-like graded junction conductive films 1 and 1 is a force of! ⁇ 10 mm S, preferably 1.5
  • a force of 4 to 7 mm is preferable. If the distance d is less than mm, the high-frequency signal transmission is insufficient.
  • the fourth high-frequency transmission line shown in FIG. 12 is a dielectric circular waveguide in which a cylindrical dielectric substrate 2 is covered with an inclined junction conductive film 1.
  • the fifth high-frequency transmission line shown in FIG. 13 is a coaxial in which a central conductor 1 made of an inclined junction conductive film is provided on the inner surface of a cylindrical dielectric substrate 2, and a ground conductor 1 ′ made of an inclined junction conductive film is provided on the outer surface. It is a track.
  • the inner and outer diameters of the coaxial line may be set appropriately according to the frequency of the high-frequency signal.
  • a gradient junction conductive film may be used for only one of the center conductor 1 and the ground conductor 1 ′.
  • the high-frequency filter of the present invention has a simple structure obtained by providing an input terminal and an output terminal on any of the above-described high-frequency transmission lines.
  • Figure 14 shows an example of such a high frequency filter.
  • the second metal thin film l ib has an electric resistance larger than that of the first metal thin film 11a, it is preferable to provide the terminal 4 on the first metal thin film 11a.
  • the high-frequency filter of the present invention has an excellent high-frequency transmissibility and anisotropy as necessary, and is useful as a band elimination filter or a filter for preventing the force of the heart.
  • Biaxially stretched polyimide film [thickness: 25 m, melting point: none, glass transition temperature: 280 ° C or higher, product name: Kapton (manufactured by Toray DuPont)] rolled to a thickness of 30 ⁇ Copper foil was deposited, and a nickel layer with a thickness of 15 m was formed on the copper foil by electroplating, and the resulting gradient bonded conductive film was slit to a width of 5 mm.
  • Biaxially stretched PET film [Thickness: 12 m, dielectric constant: 3.2 (1 MHz), dielectric loss tangent: 1.0% (1 MHz), melting point: 265 ° C, glass transition temperature: 75 ° C, trade name: “A copper layer having a thickness of 0.3 m was formed on one surface of Lumirror (manufactured by Toray Industries, Inc.) by vapor deposition. The obtained conductive film was slit so as to have a width of 5 mm. Two strip-shaped conductive films were bonded in parallel to a vinyl chloride resin support so that the PET film was on the support side, and a parallel line type high-frequency transmission line for measuring spurious characteristics was produced in the same manner as above. (Length: 50 cm, distance between two strips of conductive film d: 3mm) 0
  • a high-frequency oscillator 5 is connected to one end of a conductive film 1 ", 1" of a high-frequency transmission line for measuring spurious characteristics via a connection cable 70, and a high-frequency receiver 6 is connected to the other end.
  • a terminating resistor R 100 ⁇ for preventing the reflected wave was provided immediately before the receiver 6.
  • the high-frequency oscillator 5 includes a voltage-controlled oscillator (VCO) 51, three high-frequency oscillation modules 52, 52 ', 52 "and 2 which are switched according to the frequency of the signal to be transmitted.
  • VCO voltage-controlled oscillator
  • the high-frequency oscillator 5 is capable of transmitting signals in the range of 100 to 200 MHz, 260 to 550 MHz, and 600 to 1,050 MHz. Transmits 100, 200, 300, 500, 700, and 1,000 MHz signals to improve spurious characteristics Examined. The results are shown in Table 1. This high-frequency oscillator 5 has no spurious other than harmonics that generate less harmonics.
  • Oscillator 5 and receiver 6 were connected with connection cable 70 (see Fig. 15), and a signal with a frequency of 120 to 1,050 MHz with an output amplitude of 1.0 V was transmitted from oscillator 5.
  • Fig. 17 (a) when the signal is transmitted from the output terminals 50, 50 of the oscillator 5 so that it is output from the (+) side (Signal pattern 1), as shown in Fig. 17 (b)
  • Signal pattern 2 phase shifted by 1/2 wavelength with respect to signal pattern 1).
  • the input amplitude was obtained.
  • transfer coefficient input amplitude (V) / output amplitude (V)
  • the transfer coefficient at each measurement frequency was obtained, and a frequency transfer coefficient curve was created for each of signal patterns 1 and 2.
  • the high-frequency oscillator 5 and the high-frequency receiver 6 are connected to the high-frequency transmission line having the band-shaped inclined junction conductive film manufactured in (2) above, and the termination resistance R (100 ⁇ ) is connected to the receiver 6. It was installed just before (see Fig. 15). A 120 0 to 1,050 MHz signal (signal patterns 1 and 2) oscillated with an output amplitude (V) of 1.0 V was transmitted from oscillator 5, and the input amplitude (V) was obtained.
  • High-frequency transfer rate (%) Input amplitude (V) / (Output amplitude (V) X transfer Coefficient) Calculated according to X100.
  • Results of plotting the relationship between frequency and high frequency transmissibility Figure 18 shows this. From FIG. 18, it can be seen that for signal pattern 2, the regions of 430 to 490 MHz and 650 to 750 MHz are almost eliminated. When signal pattern 1 was transmitted, it was excellent in transmission, particularly in the 700 to 1,050 MHz region. In particular, the high-frequency transmission rate was over 100% in the range of 710 to 810 MHz and 940 to 1,050 MHz.
  • a copper layer having a thickness of 0.3 m was formed on one surface of the PET film by vapor deposition, and a nickel layer having a thickness of 40 nm was formed.
  • the obtained gradient bonded conductive film was slit to have a width of 5 mm.
  • a parallel-line type high-frequency transmission line was prepared in the same manner as in Example 1 except that two strip-like inclined conductive films were bonded in parallel to a vinyl chloride resin support so that the nickel layer was on the support side. (Length: 50 cm, distance between two strip-shaped inclined conductive films d: 3 mm) 0 As shown in FIG.
  • the high-frequency transmission rate (%) was examined. The results are shown in Figure 20. From Fig. 20, it can be seen that for signal pattern 2, the region from 670 to 840 MHz is almost eliminated. For both signal patterns 1 and 2, the transmission was excellent in the range of 260 to 400 MHz and 950 to 1,050 MHz. In particular, for signal pattern 2, the high-frequency transmission rate was over 100% in the 260 to 380 MHz and 970 to 1,050 MHz regions.
  • Example 2 In the same manner as in Example 2, a 0.3 m thick copper layer and a 40 nm thick nickel layer were formed on one surface of the PET film. A metal thin film is placed between the first roll (electrodeposited with synthetic diamond fine particles with a particle size of 15 to 30 m) and the metal second tool, with the obtained gradient bonded conductive film fixed in place. The first roll side was passed through. In the obtained porous gradient bonding conductive film, micropores were formed only in the nickel layer and the copper layer, the average aperture diameter of the micropores was 3 m, and the average distribution density of micropores was 5 ⁇ 10 4 pieces / cm 2 .
  • a porous gradient junction conductive film was slit to a width of 5 mm, and a parallel line type high-frequency transmission line was produced in the same manner as in Example 1.
  • the high-frequency transmission rate (%) was examined in the same manner as in Example 2.
  • the results are shown in FIG. From Figure 21, for signal pattern 2
  • the signal patterns 1 and 2 were excellent in transmission in the 260 to 400 MHz and 780 to 860 MHz regions.
  • the high-frequency transmissibility was 100% or more in the 260 to 400 MHz, 760 to 840 MHz, and 990 to 1,050 MHz regions.
  • a nickel layer having a thickness of 50 nm was formed on one surface of the PET film by a vapor deposition method, and a copper layer having a thickness of 0.45 ⁇ was formed.
  • Micropores were formed in the obtained gradient bonded conductive film in the same manner as in Example 3.
  • the obtained porous gradient bonding conductive film micropores were formed only in the copper layer and the nickel layer, the average aperture diameter of the micropores was 3 ⁇ 01, and the density of micropores was 5 XI 0 4 pieces / cm 2 Met.
  • the porous gradient bonding conductive film was slit to have a width of 5 mm.
  • a parallel line type high-frequency transmission line was formed in the same manner as in Example 1 except that two strip-shaped porous gradient conductive films were bonded in parallel to a support made of chlorinated resin such that the PET film was on the support side.
  • Produced (length: 50 cm, distance between two strip-shaped inclined junction conductive films d: 3 mm) 0
  • the high-frequency transmission rate (%) of this high-frequency transmission line was examined in the same manner as in Example 1. The results are shown in Fig. 22. From FIG. 22, it can be seen that the region of 480 to 530 MHz is almost removed for signal pattern 1 and the region of 650 to 700 MHz is almost removed for signal pattern 2.
  • the signal pattern 1 was excellent in transmission in the region of 130 to 160 MHz, 260 to 300 MHz, 380 to 400 MHz, 650 to 720 MHz, and 920 to 1,000 MHz.
  • the transmission was excellent in the region of 130 to 180 MHz, 260 to 360 MHz, 450 to 500 MHz, 750 to 820 MHz, and 960 to 990 MHz.
  • a conductive film was formed in the same manner as in Example 1 except that the nickel layer was not formed on the copper foil.
  • a high-frequency transmission line was produced in the same manner as in Example 1 except that this conductive film was slit to have a width of 5 mm, and the PI film was adhered in parallel to the vinyl chloride resin support so that the PI film was on the support side.
  • the high-frequency transmission rate (%) was examined in the same manner as in Example 1. The results are shown in FIG. Since this conductive film does not have a gradient composition layer, it has a force that does not develop a region where the high-frequency transmission rate is 0%.
  • Comparative Example 2 A gradient bonded conductive film was produced in the same manner as in Example 1, and then heated from the nickel layer side at 500 ° C. to eliminate the gradient composition layer. Using the obtained metal film (nickel / copper), a high-frequency transmission line was prepared in the same manner as in Example 1 except that the nickel layer was bonded in parallel to a chlorinated resin support so that the nickel layer was on the support side. . For this high-frequency transmission line, the high-frequency transmission rate (%) was examined in the same manner as in Example 1. The results are shown in FIG. Since this conductive film did not have a graded composition layer, the region where the high-frequency transmissibility was 0% did not appear.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Laminated Bodies (AREA)

Abstract

L'objet de la présente invention est un film conducteur qui possède une dépendance de fréquence d'un rapport de transmission à haute fréquence et une ligne à haute fréquence, ainsi qu'un filtre à haute fréquence qui possède un tel film conducteur. Des premier et second films minces métalliques (11a, 11b) qui possèdent des résistances électriques différentes sont agencés sur au moins une surface d'un film en plastique (10) et la limite entre les premier et second films minces métalliques (11a, 11b) est un film conducteur de liaison de gradient qui possède une couche de composition de gradient (12') dans laquelle le rapport de composition métallique est changé dans la direction d'épaisseur.
PCT/JP2007/067075 2006-08-31 2007-08-31 Film conducteur de liaison de gradient, ligne de transmission à haute fréquence et filtre à haute fréquence associé WO2008026743A1 (fr)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008075746A1 (fr) * 2006-12-20 2008-06-26 Seiji Kagawa Film conducteur, procédé de fabrication du film conducteur et composant haute fréquence
JPWO2010026650A1 (ja) * 2008-09-05 2012-01-26 東芝ストレージデバイス株式会社 ヘッドサスペンションユニットおよびヘッドサスペンションアセンブリ

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JPH02298093A (ja) * 1989-05-12 1990-12-10 Tokyo Electron Ltd フレキシブル配線板
JPH06334410A (ja) * 1993-05-24 1994-12-02 Japan Aviation Electron Ind Ltd フレキシブル配線基板
JPH07273510A (ja) * 1994-03-30 1995-10-20 Nec Corp マイクロストリップライン及びその製造方法
JPH07273509A (ja) * 1994-04-04 1995-10-20 Toshiba Corp マイクロ波回路及び回路基板の製造方法
JPH08167804A (ja) * 1994-12-14 1996-06-25 Murata Mfg Co Ltd 高周波電磁界結合型薄膜積層電極、高周波伝送線路、高周波共振器、高周波フィルタ、高周波デバイス及び高周波電磁界結合型薄膜積層電極の膜厚設定方法
JP2007221713A (ja) * 2006-02-20 2007-08-30 Seiji Kagawa 高周波伝送線路

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JP3447070B2 (ja) * 1992-09-17 2003-09-16 三井化学株式会社 フレキシブル回路基板用材料
JPH0974257A (ja) * 1995-09-01 1997-03-18 Dainippon Printing Co Ltd 厚膜配線およびその製造方法
JPH09162514A (ja) * 1995-12-08 1997-06-20 Ibiden Co Ltd プリント配線板とその製造方法

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Publication number Priority date Publication date Assignee Title
JPH02298093A (ja) * 1989-05-12 1990-12-10 Tokyo Electron Ltd フレキシブル配線板
JPH06334410A (ja) * 1993-05-24 1994-12-02 Japan Aviation Electron Ind Ltd フレキシブル配線基板
JPH07273510A (ja) * 1994-03-30 1995-10-20 Nec Corp マイクロストリップライン及びその製造方法
JPH07273509A (ja) * 1994-04-04 1995-10-20 Toshiba Corp マイクロ波回路及び回路基板の製造方法
JPH08167804A (ja) * 1994-12-14 1996-06-25 Murata Mfg Co Ltd 高周波電磁界結合型薄膜積層電極、高周波伝送線路、高周波共振器、高周波フィルタ、高周波デバイス及び高周波電磁界結合型薄膜積層電極の膜厚設定方法
JP2007221713A (ja) * 2006-02-20 2007-08-30 Seiji Kagawa 高周波伝送線路

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008075746A1 (fr) * 2006-12-20 2008-06-26 Seiji Kagawa Film conducteur, procédé de fabrication du film conducteur et composant haute fréquence
JP5410094B2 (ja) * 2006-12-20 2014-02-05 清二 加川 導電フィルム、その製造方法及び高周波部品
JPWO2010026650A1 (ja) * 2008-09-05 2012-01-26 東芝ストレージデバイス株式会社 ヘッドサスペンションユニットおよびヘッドサスペンションアセンブリ

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