200820485 九、發明說明： 【發明所屬之技術領域】 本發明關於二種類的金屬薄膜具有組成漸變而接合的 導電膜，及使用其的高頻傳送線路以及高頻濾波器。 【先前技術】 於個人電腦等的資訊處理機器、攜帶型電話等的無線 通信機器等中，使用高頻傳送線路。作爲習知的高頻傳送 線路，如第26圖所示地使用在線狀的內導體1〇〇與外導 體100’之間隔著介電基板200的同軸電纜，或如第27圖 所示地使用由具有四方形截面的金屬管1 00所構成的導波 管。然而，同軸電纜或導波管係係以指定的衰減率傳送高 頻信號，而且傳送特性係等方向性（兩方向皆相同）。 此外，有在介電基板2 1 0的一面設有平行的一對帶狀 導體線路110、110之高頻傳送線路（第28圖），在介電基 板2 1 0的兩面設有接地導體1 2 0、1 2 0，在中心部設有導體 110的高頻傳送線路（第29圖），在介電基板210的一面設 有接地導體120，在另一面設有帶狀導體110的高頻傳送 線路（第3 0圖），在陶瓷介電基板2 1 0的一面設有帶狀導體 1 1 0，在其兩側配置有接地導體1 2 〇、1 2 0的高頻傳送線路（ 第31圖）等。特開平7-336113號揭示具有膜厚爲使用頻率 的表皮深度之1.14〜2.75倍的導體膜，例如第28圖及31 等所示構造的高頻傳送線路。 然而，即使如特開平7-3 3 6 1 1 3號中所記載地，於陶瓷 介電基板210上形成導體膜，高頻傳送率（輸入振幅/輸出 200820485 振幅）也不會隨著頻率而增大或成爲零，而且高頻信號亦不 會隨著傳送方向而發生特性差異（有異方性）。若利用如此 的高頻傳送率之頻率依賴性或異方向性，可得到分波特性 極良好的高頻濾波器。 【發朋內容】 發明所欲解決的問題 因此，本發明之目的爲提供具有高頻傳送率之頻率依 賴性的導電膜、及具有該導電膜的高頻傳送線路以及高頻 ’濾波器。 解決問題的手段 鑒於上述目的而精心硏究的結果，本發明人發現於在 塑膠薄膜具有至少二層金屬薄膜的導電膜中，金屬薄膜彼 此的邊界部若成爲漸變組成層，則可得到高頻傳送率的頻 率依賴性，而想到本發明。 即，本發明的漸變接合式導電膜之特徵爲在塑膠薄膜 _ 的至少一面具有電阻不同的第一及第二金屬薄膜，上述第 一與第二金屬薄膜的邊界具有金屬組成比在厚度方向中變 化的漸變組成層。 · 於該漸變接合式導電膜中，上述塑膠薄膜與上述金屬 薄膜的邊界，亦較佳成爲上述金屬的比例係從上述金屬薄 膜到上述塑膠薄膜減少的漸變組成層。較佳爲上述第一金 屬薄膜係蒸鍍膜、鍍敷膜或箔，上述第二金屬薄膜係蒸鍍 膜或鍍敷膜。 於本發明的較佳實施例中，上述第二金屬薄膜具有比 -6- 200820485 上述第一金屬薄膜大2x1 Ο·6 Ω · cm以上的電阻。於此情況 下，較佳爲上述第一金屬薄膜係由銅所構成，上述第二金 屬薄膜係由鎳所構成。 於本發明的另一較佳實施例中，上述第一金屬薄膜具 有比上述第二金屬薄膜大2x1 (Γ6Ω· cm以上的電阻。於此 情況下，較佳爲上述第一金屬薄膜係由鎳所構成，上述第 二金屬薄膜係由銅所構成。 ' 於上述第一金屬薄膜具有比第二金屬薄膜還大的電阻 B 之情況，以及其相反的情況之任一者中，電阻小者的金屬 薄膜之厚度，相對於電阻大者的金屬薄膜之厚度而言’較 佳爲2/1〜20/1的比。特別地，於上述第一及第二金屬薄 膜皆爲蒸鍍膜時，此比更佳爲3/1〜15/1。於上述第一及第 二金屬薄膜皆爲蒸鍍膜時，電阻大者的金屬薄膜之厚度係 10〜70nm，電阻小者的金屬薄膜之厚度係0.1〜Ιμπι。 較佳爲於至少上述第一及第二金屬薄膜上形成具有〇·5 〜5 Ομπι的平均開口徑之多數微細孔。上述微細孔的平均 Β 分布密度較佳爲lxl〇4〜2χ105個/cm2。上述塑膠薄膜較佳 係由聚對酞酸乙二酯或聚醯亞胺所構成。 本發明的高頻傳送線路具備並列的二個隔離之漸變接. 合式導電膜。 二個漸變接合式導電膜較佳爲配置在以下中任一者： (1)介電基板的同一面上，或（2)截面C字狀介電基板的對 向內面上，或（3)截面L字狀介電基板的正交內面上 本發明的高頻濾波器具備上述高頻傳送線路。 200820485 發明的效果 本發明的漸變接合式導電膜由於具有高頻傳送率的頻 率依賴性，故若利用於飛機或汽車等、各種的資訊處理機 器及無線通信機器等所用的高頻傳送線路，則可效率佳地 傳送所欲的高頻信號，同時可使特定頻率的高頻信號之傳 送成爲零。如此的高頻傳送線路亦可期待應用作爲天線， 例如電子標籤用天線。又，若成爲具有高頻傳送的異方向 性之構成，例如可得到具有可傳送送信信號但不傳送受信 信號的特性之簡單構造的高頻濾波器，可期待應用作爲防 駭客用濾波器等。 【實施方式】 實施發明的最佳形態 π]漸變接合式導電膜 (1)構造 第1圖顯示本發明的漸變接合式導電膜之一例。於塑 膠薄膜10的一面，一樣地形成第一及第二金屬薄膜11a、 lib，兩金屬薄膜11a、lib的邊界部係成爲第一金屬與第 二金屬的組成比在厚度方向中變化的漸變組成層1 2 ’。於 漸變組成層1 2 ’中，金屬組成比係較佳爲大致連續地變化 。雖然沒有限定，但塑膠薄膜10與金屬薄膜11a的邊界部 ，較佳成爲金屬的比，例係從金屬薄膜1 1 a到塑膠薄膜1 〇減 少的漸變組成層1 2。於漸變組成層1 2·中，金屬的比例更 佳爲大致連續地變化。第1圖的（c)示意地顯示第二金屬原 子lib部分地進入弟一'金屬原子11a’之間的樣子，（d)係 200820485 示意地顯示第一金屬原子lla’部分地進入薄膜10的塑膠 分子1 0 ’之間的樣子。 第2圖顯示漸變接合式導電膜的另一例子。此例子的 漸變接合式導電膜，除了第一金屬薄膜1 1 a係經由黏著層 13接合於塑膠薄膜10以外，係與第1圖所示者相同。由 於具有黏著層13，第一金屬薄膜11a可爲金屬箔。第2圖 的（〇示意地顯示第二金屬原子lib’部分地進入第一金屬原 子1 la’之間的樣子，（d)示意地顯示由於黏著層13，第一 ® 金屬原子11 a’沒有進入薄膜10的塑膠分子10’之間的樣子 〇 第3圖顯示漸變接合式導電膜的又另一例子。此例子 的漸變接合式導電膜，除了第一及第二金屬薄膜11a、lib 設有多數的微細孔14以外，係與第1圖所示者相同。多 數的微細孔1 4係如後述地由表面具有鑽石微粒子的滾筒 所形成而具有各種深度，但不需要貫穿塑膠薄膜10。 第4圖顯示漸變接合式導電膜的再k 一例子。該例子 _ 的漸變接合式導電膜，除了在塑膠薄膜1〇的兩面一樣地 形成第一及第二金屬薄膜11a、lib，在一面的第一及第二 金屬薄膜1 1 a、1 1 b設有多數的微細孔1 4以外，係與第i 圖所示者相同。 第5圖顯示漸變接合式導電膜的再另一例子。於此例 子中，在塑膠薄膜10的兩面形成第一及第二金屬薄膜11a 、1 1 b，而且多數的微細孔1 4係大致貫穿導電膜。可考慮 爲金屬薄膜1 1 a、1 1 b在貫穿孔的形成中作塑性變形，進入 200820485 微細孔1 4內。 弟ό圖顯不漸變接合式導電膜的再另—*例子。此例子 的漸變接合式導電膜，除了在塑膠薄膜1 0的一 @上平g 地形成二個積層金屬帶狀薄膜（由第一及第二金屬薄膜lla 、1 lb所構成）以外，係與第1圖所示者相同。 第7圖顯示漸變接合式導電膜的再另一例子。此例子 的漸變接合式導電膜，除了在塑膠薄膜1 0的一面形成_ 個積層金屬帶狀薄膜（由第一及第二金屬薄膜lla、iib所 B 構成），在另一面一樣地形成積層金屬薄膜（由第一及第二 金屬薄膜1 1 a、1 1 b所構成），係與第1圖所示者同樣。 第8圖顯示漸變接合式導電膜的再另一例子。此例子 的漸變接合式導電膜，除了在塑膠薄膜10的一面設置三 條積層金屬帶狀薄膜（各自由第一及第二金屬薄膜lla、 1 1 b所構成）以外，係與第1圖所示者相同。 (2)塑膠薄膜 構成塑膠薄膜1 0的樹脂係沒有特別的限制，例如可舉 出聚酯、聚苯硫醚、聚醯胺、聚醯亞胺、聚醯胺醯亞胺、 聚醚碾 '聚醚醚酮、聚碳酸酯、丙烯酸樹脂、聚苯乙烯、 ABS樹脂、聚胺甲酸酯、氟樹脂、聚烯烴（聚乙烯、聚丙烯 等）、聚氯乙烯、熱塑性彈性體等。其中，較佳爲聚酯、聚 苯硫醚、聚醯胺、聚醯亞胺、聚醯胺醯亞胺、聚醚颯及聚 醚醚酮般的高耐熱性樹脂，特佳爲聚酯及聚醯亞胺。 (a)聚酯薄膜 作爲聚酯，可舉出聚對酞酸乙二酯（PET)、聚對酞酸丁 -10- 200820485 二酯（ΡΒΤ)、聚萘二甲酸乙二酯”^^^〜聚萘二甲酸丁二酯 (ΡΒΝ)等。其中，PET薄膜及ΡΒτ薄膜由於係廉價地市售 ，故較宜。 (i) PET薄膜 PET薄膜基本上係由乙二醇與對酞酸所構成的飽和聚 酯薄膜。在不損害特性的範圍內，亦可含有乙二醇以外的 二醇成分、及對酞酸以外的殘酸成分。市售的PET薄膜具 有約3的介電常數（106Hz)、約〇·〇ι〜〇·〇2的介電正切 ® (106Ηζ)、約25 0〜270°C的熔點、及約70〜80。〇的玻璃轉 移溫度。介電常數及介電正切係依照AS TM D1 50來測定 ，熔點係依照A S T M D 4 5 9 1來測定，玻璃轉移溫度係依照 JIS Ε7 121來測定（以下相同）。 (ii) PBT 薄膜 P B T薄膜基本上係由1，4 - 丁二醇與對酞酸所構成的飽 和聚酯薄膜。在不損害物性的範圍內，亦可含有1，4 - 丁二 _ 醇以外的二醇成分、及對酞酸以外的羧酸成分。市售的 PBT薄膜具有約3〜4的介電常數（l〇6Hz)、約0.02的介電 正切（106Hz)、約220〜230°C的熔點、及約20〜45°C的玻 璃轉移溫度。PBT薄膜的熱收縮率（在15 0°C加熱10分鐘 的條件下測定），在MD(長度方向）及TD(橫方向）較佳皆爲 2%以下。熱收縮率爲2%以下的PBT薄膜，例如可藉由特 開2004-268257號中所記載的空氣冷卻吹脹成形法來製造 (iii)其它添加成分 -11- 200820485 聚酯亦可以含有聚苯硫醚、聚醯胺、聚醯亞胺、聚醯 胺醯亞胺、聚醚礪、聚醚醚酮、聚碳酸酯、聚胺甲酸酯、 氟樹脂、聚燒烴、聚氯乙烯、熱塑性彈性體等的熱塑性樹 脂。其它熱塑性樹脂的含量，以聚酯全體當作i 〇 〇質量％ 時，較佳爲5〜20質量％，更佳爲5〜1 5質量％ ,特佳爲5 〜1 0質量％。又’視需要亦可適當地含有可塑劑、抗氧化 劑或紫外線吸收劑等的安定劑、抗靜電劑、界面活性劑' φ 染料或顔料等的著色劑、用於改善流動性的潤滑劑、無機 塡充劑等的添加劑。 (b)聚醯亞胺薄膜 聚醯亞胺基本上係由芳香族四羧酸二酐與芳香族二胺 的脫水縮合反應物所構成，較佳爲以均苯四甲酸二酐與 4,4’-二胺基二苯基醚的脫水縮合反應物當作主成分者。市 售的聚醯亞胺具有約3.4的介電常數（l〇6Hz)及約0.01的介 電正切（1 06Ηζ)。聚醯亞胺亦可以含有其它熱塑性樹脂或添 _ 加劑。其它熱塑性樹脂的含量，以聚醯亞胺全體當作i 〇 〇 質量％時，較佳係5〜2 0質量％。 (Ο積層薄膜 塑膠薄膜10係不限於單層，亦可爲積層薄膜。例如， 藉由熱熔接不同的塑膠薄膜，或經由聚乙烯等的黏著層來 黏著，可形成積層薄膜。 (d)薄膜的厚度 塑膠薄膜1 0的厚度係沒有特別的限定，但實用上約4 〜5 0μιη係較合適。塑膠薄膜10的厚度若低於約4μιη，則 -12- 200820485 有技術上的困難，而且若超過約50μηι，則漸變接合式導 電膜變得太過厚。 (3)金屬薄膜 第一與第二金屬薄膜1 1 a、1 1 b係電阻有不同。電阻可 爲第一金屬薄膜11a比第二金屬薄膜lib還大，反之亦可 。第一及第二金屬薄膜11a、lib的電阻萆在常溫較佳爲 2xl(T6n.cm 以上，更佳爲 4xl(r6Q，cm 以上。 作爲用於形成第一及第二金屬薄膜1 1 a、1 1 b的金屬， 1可舉出銅[電阻率（2〇°C ) : 1·6730χ1(Τ6Ω·(：Γη]、鋁[電阻率 (2 0°C ) : 2·6548 χ1(Γ6Ω .cm]、銀[電阻率（2 0°C ) : 1.59χ1(Γ6Ω • cm]、金[電阻率（20°C ) : 2·35χ10·6Ω · cm]、鉑[電阻率（2 0 。(：）：10·6χ10·6Ω·οιη]、鎳[電阻率（20°C): 6.84χ10·6Ω·(：πι] 、鐵[電阻率（2 0°C ) : 9·71χ10·6Ω · cm]、鈷[電阻率（20°C ): 6·24χ10·6Ω · cm]、鎂[電阻率（20°C ) : 4.45χ1(Γ6Ω · cm]、鈦[ 電阻率（20°C ) : 42xl(T6Q.cm]、鉻[電阻率（〇°C ) : 12·9χ10· 6Q.cml、鋅[電阻率（20°C): 5·916χ10·6Ω·(：πι]、鎵[電阻率 § (20°C ) : 17·4χ10·6Ω · cm]、鉬[電阻率（〇°C ) : 5.2χ10·6Ω · cm]、鈀[電阻率（20°C): 1〇·8χ1(Γ6Ω·οιη]、錫[電阻率（0°C) :11.0xl(T6Q.cm]、及此等的合金等。 用於形成第一及第二金屬薄膜11a、lib的金屬，係以 電阻爲不同的方式，可從上述之中選擇。作爲較佳的組合 ，可舉出第一金屬薄膜11a係由銅及/或鋁所構成，第二金 屬薄膜1 1 b係由鎳、鋅、錫、鈦、鈷、鐵及鉻所組成族群 中選出的至少一種所成的組合，以及第一金屬薄膜11 a係 -13- 200820485 由鎳、鋅、錫、鈦、鈷、鐵及鉻所組成族群中選出的至少 一種所構成，第二金屬薄膜1 1 b係由銅及/或鋁所構成的組 合。其中，更佳爲第一金屬薄膜lla係由銅所構成，第二 金屬薄膜1 1 b係由鎳所構成的組合，以及第一金屬薄膜 1 1 a係由鎳所構成，第二金屬薄膜1 1 b係由銅所構成的組 合。 於第一金屬薄膜lla具有比第二金屬薄膜lib大的電 阻之情況，以及其相反的情況之任一者中，電阻小者的金 ® 屬薄膜之厚度，相對於電阻大者的金屬薄膜之厚度而言， 較佳爲2/1〜20/1的比。特別地，於第一及第二金屬薄膜 lla'、lib皆爲蒸鍍膜時，此比更佳爲3/1〜15/1。 於第一|金屬薄膜lla具有比第二金屬薄膜lib大的電 阻之情況，以及其相反的情況之任一者中，電阻小者的金 屬薄膜之厚度較佳係0.1〜35 μιη，電阻大者的金屬薄膜之 厚度較佳係0.01〜20 μηι。但是，於第一及第二金屬薄膜 | lla、11b皆爲蒸鑛膜時，電阻小者的金屬薄膜之厚度較佳 係0 · 1〜1 μ m，更佳係〇 · 1 5〜0 · 7 μ m，最佳係0 · 2〜0.6 μ m， 電阻大者的金屬薄膜之厚度較佳係〜70nm，更佳係20 〜6 0nm。電阻小者的金屬蒸鍍膜之厚度若低於Ο.ίμιη，則 高頻傳達特性差。另一方面，若超過〇·7μηι，則高頻傳送. 率的頻率依賴性差。 ‘ 第一金屬薄膜1 1 a .較佳係藉由蒸鍍、鍍敷或箔來形成 者，第二金屬薄膜1 1 b較佳係藉由蒸鍍或鍍敷來形成者。 金屬的蒸鍍膜通常係結晶性、純度高、耐酸化性優異。 -14- 200820485 (4) 漸變組成層 (a) 金屬薄膜-塑膠薄膜 例如，如第1圖所示地，於漸變組成層12中，金屬原 子1 la5係部分地進入薄膜10的塑膠分子10’之間。因此， 金屬原子1 1 a’的組成比（濃度）係從金屬薄膜1 1 a到塑膠薄 膜1 〇減少。金屬原子1 1 a’的組成比之減少較佳爲在厚度 方向中大致連續性。「大致連續性」係意味厚度方向中的 金屬原子1 1 a’之組成比係大致單調地變化，於局部亦可未 必滿足此條件。於漸變組成層12中，可認爲由於金屬原 子11a’的濃度降低，而形成非晶質相。 (b) 第一金屬薄膜-第二金屬薄膜 例如，如第1圖所示地，於漸變組成層1 2 ’中，第二金 屬原子1 lb’係部分地進入第一金屬1 la’之間。因此，第一 金屬11a’的組成比（濃度）係從第一金屬薄膜11a到第二金 屬薄膜lib減少，第二金屬原子lib’係從第二金屬薄膜 1 1 b到第一金屬薄膜1 1 a減少。於漸變組成層1 2 ’中，金屬 組成比的變化較佳係在厚度方向中大致連續性。於漸變組 成層12,中，由於兩金屬原子11a’、lib’的濃度係徐徐地 變化，故可認爲非晶質。 於具有非晶質的漸變組成層12、12’的導電膜中，雖然 明確理由爲不明，但發現高頻傳達率有1〇〇 %以上的增幅區 域，及高頻傳達率有大致〇%的衰減區域。 (5) 微細孔 爲了得到優異的高頻傳達特性，較佳爲在漸變接合式 -15- 200820485 導電膜形成微細孔14。如第3圖及第4圖所示地，微細孔 1 4較佳爲至少貫穿金屬薄膜1 1 a、1 1 b。微細孔1 4若貫穿 金屬薄膜11a、lib，則亦可達到塑膠薄膜10的途中爲止 。又，如第5圖所示地，微細孔14亦可貫穿漸變接合式 導電膜.1。 微細孔14的平均開口徑較佳爲〇·1〜ΙΟΟμηι，更佳爲 0.5〜50 μπι。使微細孔14的平均開口徑成爲低於0.1 μπι係 有技術困難性。又，微細孔 14的平均開口徑若超過 Β ΙΟΟμηι，則漸變接合式導電膜1的強度有降低之虞。爲了 具有良好的傳送損失，平均開口徑的上限特佳爲20μηι， 最佳爲1 0 μπι。平均開口徑係使用原子間力顯微鏡，在漸 變接合式導電膜的任意位置中，測定50μιηχ50μπι的5個 地方的區域內之所有微細孔1 4的直徑，作平均而求得。 微細孔14的平均分布密度較佳爲500個/cm2以上，更 佳爲5x1 03個/em2以上。微細孔14的平均分布密度若低於 _ 500個/cm2，則傳送損失會變大。其理由雖未明朗，但推 測係因爲在高頻信號的傳送時，微細孔1 4附近發生渦電 流。爲了具有良好的傳送損失，微細孔1 4的平均分布密 度特佳爲1 xlO4〜3 xlO5個/cm2，最佳爲IxlO4〜2χ105個 / c m2。微細孔1 4的平均分布密度係使用原子間力顯微鏡， 在漸變接合式導電膜的任意位置中，計數50μπιχ50μπι的5 個地方的區域內之微細孔1 4的個數，將所得到的値作平 均，換算每1cm2的個數而求得。 如第5圖所示地，於微細孔1 4貫穿漸變接合式導電膜 -16- 200820485 時，金屬薄膜1 1 a、1 1 b係塑性變形，進入微細孔1 4的壁 面。藉此，傳送損失變成更少。 (6)黏著層 黏著層1 3例如係由聚胺甲酸酯樹脂、環氧樹脂、丙烯 酸樹脂、乙烯一乙烯醇共聚物（EVA)、聚乙烯縮醛系樹脂[ 例如聚乙烯縮甲醛、聚乙烯縮丁醛（P VB)、改性PVB等]、 氯乙烯樹脂、熱熔黏著劑、密封膜等所構成。 [2]漸變接合式導電膜的製造方法 漸變接合式導電膜1係藉由在塑膠薄膜10的一面或兩 面，以蒸鍍法、鍍敷法或箔接合法來形成第一金屬薄膜 1 1 a，再以蒸鍍法或鍍敷法來形成第二金屬薄膜i i b而製造 ' 。由於在第一金屬薄膜Ua與第二金屬薄膜lib之間形成 漸變組成層12’，故不需要在塑膠薄膜1〇與第一金屬薄膜 1 1 a之間形成漸變組成層1 2。例如，於第2圖所示的漸變 接合式導電膜1中’將塑膠薄膜〗〇黏著於由金屬箔所構 B 成的第一金屬薄膜1 1 a，以蒸鍍法或鍍敷法來形成第二金 屬薄膜lib。 (1)金屬薄膜形成步驟 (a)蒸鍍法[Technical Field] The present invention relates to a metal film of two types having a gradual transition and a conductive film, and a high-frequency transmission line and a high-frequency filter using the same. [Prior Art] A high-frequency transmission line is used in an information processing device such as a personal computer or a wireless communication device such as a portable telephone. As a conventional high-frequency transmission line, as shown in Fig. 26, a coaxial cable in which a linear inner conductor 1 is interposed between the outer conductor 100' and the dielectric substrate 200 is used, or as shown in Fig. 27 A waveguide made up of a metal tube 100 having a square cross section. However, coaxial cable or waveguide systems transmit high frequency signals at a specified attenuation rate, and the transmission characteristics are directional (the same in both directions). Further, a high-frequency transmission line (FIG. 28) in which a pair of parallel strip-shaped conductor lines 110 and 110 are provided on one surface of the dielectric substrate 210 is provided, and a ground conductor 1 is provided on both sides of the dielectric substrate 2 10 20 0, 1 2 0, a high-frequency transmission line having a conductor 110 at a central portion (Fig. 29), a ground conductor 120 is provided on one surface of the dielectric substrate 210, and a high frequency of the strip conductor 110 is provided on the other surface. In the transmission line (Fig. 30), a strip conductor 1 1 0 is provided on one surface of the ceramic dielectric substrate 210, and a high frequency transmission line of the ground conductors 1 2 〇 and 1 2 0 is disposed on both sides thereof. 31 figure) and so on. Japanese Laid-Open Patent Publication No. Hei 7-336113 discloses a conductor film having a film thickness of 1.14 to 2.75 times the skin depth of use frequency, for example, a high-frequency transmission line having a structure as shown in Figs. 28 and 31. However, even if a conductor film is formed on the ceramic dielectric substrate 210 as described in JP-A-7-3 3 6 1 1 3, the high-frequency transmission rate (input amplitude/output 200820485 amplitude) does not vary with frequency. Increase or become zero, and the high-frequency signal does not have a characteristic difference (has an anisotropy) with the direction of transmission. By using the frequency dependence or the anisotropy of such a high-frequency transmission rate, a high-frequency filter having excellent demultiplexing characteristics can be obtained. SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a conductive film having a frequency dependence of a high frequency transmission rate, a high frequency transmission line having the conductive film, and a high frequency filter. Means for Solving the Problems In view of the above-described objects, the inventors have found that in a conductive film having at least two metal thin films in a plastic film, if a boundary portion of the metal thin films becomes a graded layer, a high frequency can be obtained. The frequency dependence of the transmission rate is considered, and the present invention is conceivable. That is, the graded junction type conductive film of the present invention is characterized in that the first and second metal films having different electric resistances are formed on at least one surface of the plastic film, and the boundary between the first and second metal films has a metal composition ratio in the thickness direction. The gradient of the changing layers. In the graded junction type conductive film, the boundary between the plastic film and the metal film is preferably a graded layer in which the ratio of the metal is reduced from the metal film to the plastic film. Preferably, the first metal thin film type vapor deposited film, a plating film or a foil, and the second metal thin film is a vapor deposited film or a plated film. In a preferred embodiment of the present invention, the second metal thin film has a resistance of 2x1 6·6 Ω·cm or more larger than the first metal thin film of -6-200820485. In this case, it is preferable that the first metal thin film is made of copper and the second metal thin film is made of nickel. In another preferred embodiment of the present invention, the first metal thin film has a resistance of 2x1 (Γ6 Ω·cm or more) larger than the second metal thin film. In this case, it is preferable that the first metal thin film is made of nickel. The second metal thin film is made of copper. 'In the case where the first metal thin film has a larger electric resistance B than the second metal thin film, and in the opposite case, the electric resistance is small. The thickness of the metal thin film is preferably a ratio of 2/1 to 20/1 with respect to the thickness of the metal thin film having a large electric resistance. Particularly, when both the first and second metal thin films are vapor deposited films, Preferably, the ratio is 3/1 to 15/1. When the first and second metal films are both vapor-deposited, the thickness of the metal film having a large electric resistance is 10 to 70 nm, and the thickness of the metal film having a small electric resistance is 0.1. Preferably, a plurality of fine pores having an average opening diameter of 〇·5 〜5 Ομπι are formed on at least the first and second metal thin films. The average Β distribution density of the fine pores is preferably lxl 〇 4 〜 2 χ 105 /cm2. The above plastic film is better It is composed of polyethylene terephthalate or polyimine. The high-frequency transmission line of the present invention has two isolated gradual junction-type conductive films. The two tapered junction-type conductive films are preferably disposed below. Either: (1) the same surface of the dielectric substrate, or (2) the inward facing surface of the C-shaped dielectric substrate, or (3) the orthogonal inner surface of the L-shaped dielectric substrate The high-frequency filter of the present invention includes the above-described high-frequency transmission line. 200820485 Effect of the Invention The gradation-bonding type conductive film of the present invention has a frequency dependence of a high-frequency transmission rate, and thus is used for various information such as an airplane or an automobile. The high-frequency transmission line used in processing equipment and wireless communication equipment can efficiently transmit the desired high-frequency signal and can transmit the high-frequency signal of a specific frequency to zero. Such a high-frequency transmission line can also be expected. The antenna is used as an antenna, for example, an antenna for an electronic tag. Further, if it is configured to have an omnidirectionality of high-frequency transmission, for example, a simple structure having a characteristic that a transmission signal can be transmitted but a transmission signal is not transmitted can be obtained. The frequency filter can be expected to be used as a tamper-resistant filter or the like. [Embodiment] The best mode for carrying out the invention is π] gradation bonding type conductive film (1) structure. Fig. 1 shows the gradation bonding type conductive film of the present invention. For example, the first and second metal thin films 11a and 11b are formed on one surface of the plastic film 10, and the boundary portions of the two metal thin films 11a and 11b are changed in the thickness direction of the first metal and the second metal. The gradient composition layer 1 2 '. In the graded composition layer 1 2 ', the metal composition ratio is preferably substantially continuously changed. Although not limited, the boundary portion between the plastic film 10 and the metal thin film 11a is preferably a metal ratio. The gradual composition layer 12 is reduced from the metal film 1 1 a to the plastic film 1 〇. In the graded composition layer 1 2·, the proportion of the metal is more preferably changed substantially continuously. (c) of Fig. 1 schematically shows a state in which the second metal atom lib partially enters between the metal atoms 11a', and (d) 200820485 schematically shows that the first metal atom 11a' partially enters the film 10. The appearance of plastic molecules between 1 0 '. Fig. 2 shows another example of the tapered bonded conductive film. The tapered bonding type conductive film of this example is the same as that shown in Fig. 1 except that the first metal film 11a is bonded to the plastic film 10 via the adhesive layer 13. Since the adhesive layer 13 is provided, the first metal thin film 11a may be a metal foil. Fig. 2(〇 schematically shows a state in which the second metal atom lib' partially enters between the first metal atoms 1 la', and (d) schematically shows that the first metal atom 11 a' is not present due to the adhesion layer 13 Example of entering between the plastic molecules 10' of the film 10, Fig. 3 shows still another example of the graded bonded conductive film. The tapered bonded conductive film of this example is provided with the first and second metal films 11a, lib. The plurality of fine holes 14 are the same as those shown in Fig. 1. The plurality of fine holes 14 are formed of rollers having diamond fine particles on the surface as described later, and have various depths, but do not need to penetrate the plastic film 10. 4 shows an example of a gradual bonded conductive film. The gradual bonded conductive film of this example has the first and second metal thin films 11a and lib formed on the both sides of the plastic film 1 ,. The first and second metal thin films 1 1 a and 1 1 b are the same as those shown in Fig. i except that a plurality of fine holes 14 are provided. Fig. 5 shows still another example of the tapered bonded conductive film. In the example, in plastic film 1 The first and second metal thin films 11a and 11b are formed on both sides of 0, and a plurality of fine pores 14 are substantially penetrating the conductive film. It is considered that the metal thin films 1 1 a and 1 1 b are plasticized in the formation of the through holes. Deformation, enter the 200820485 micro-hole 1 4. The other figure shows the gradual bonding type conductive film of the ό 。 。 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此The two laminated metal strip films (which are composed of the first and second metal thin films 11a and 11b) are the same as those shown in Fig. 1. Fig. 7 shows still another example of the tapered bonded conductive film. In the tapered bonded conductive film of this example, a laminated metal strip film (which is composed of the first and second metal thin films 11a and iib B) is formed on one surface of the plastic film 10, and a laminated metal is formed on the other side. The film (consisting of the first and second metal thin films 1 1 a and 1 1 b) is the same as that shown in Fig. 1. Fig. 8 shows still another example of the tapered bonding type conductive film. Bonded conductive film except on one side of plastic film 10 The three laminated metal strip films (each composed of the first and second metal thin films 11a and 1 1 b) are the same as those shown in Fig. 1. (2) The plastic film constitutes a resin film of the plastic film 10 There are no particular restrictions, and examples thereof include polyester, polyphenylene sulfide, polyamine, polyimide, polyamidimide, polyether-polyetheretherketone, polycarbonate, acrylic resin, and poly Styrene, ABS resin, polyurethane, fluororesin, polyolefin (polyethylene, polypropylene, etc.), polyvinyl chloride, thermoplastic elastomer, etc. Among them, polyester, polyphenylene sulfide, polyfluorene are preferred. A high heat resistant resin such as an amine, a polyimide, a polyamidoximine, a polyether oxime or a polyetheretherketone, particularly preferably a polyester or a polyimide. (a) Polyester film As the polyester, polyethylene terephthalate (PET), poly(p-butyl phthalate -10- 200820485 diester (yttrium), polyethylene naphthalate) ^^^ Polybutylene naphthalate (ΡΒΝ), etc. Among them, PET film and ΡΒτ film are preferably commercially available at low cost. (i) PET film PET film is basically made of ethylene glycol and bismuth acid The saturated polyester film having a composition may contain a diol component other than ethylene glycol and a residual acid component other than citric acid in a range that does not impair the properties. A commercially available PET film has a dielectric constant of about 3 ( 106Hz), dielectric tangent® (106Ηζ) of about 〇·〇ι~〇·〇2, melting point of about 25 0~270°C, and about 70~80. Glass transition temperature of yttrium. Dielectric constant and dielectric The tangent system was measured in accordance with ASTM D1 50, the melting point was measured in accordance with ASTM D 4 5 9 1 , and the glass transition temperature was measured in accordance with JIS Ε 7 121 (the same applies hereinafter). (ii) PBT film PBT film was basically composed of 1, 4 - a saturated polyester film composed of butanediol and p-citric acid, which may also contain 1,4 - butyl in the range which does not impair the physical properties. a diol component other than an alcohol and a carboxylic acid component other than citric acid. A commercially available PBT film has a dielectric constant of about 3 to 4 (10 Hz), a dielectric tangent of about 0.02 (106 Hz), and about 220 〜. The melting point of 230 ° C, and the glass transition temperature of about 20 to 45 ° C. The heat shrinkage rate of the PBT film (measured under the conditions of heating at 150 ° C for 10 minutes), in the MD (length direction) and TD (horizontal direction) Preferably, the PBT film having a heat shrinkage ratio of 2% or less is produced by, for example, the air cooling inflation molding method described in JP-A-2004-268257 (iii) other additive component-11. - 200820485 Polyester may also contain polyphenylene sulfide, polyamide, polyimine, polyamidimide, polyether oxime, polyetheretherketone, polycarbonate, polyurethane, fluororesin, A thermoplastic resin such as a hydrocarbon, a polyvinyl chloride or a thermoplastic elastomer. The content of the other thermoplastic resin is preferably from 5 to 20% by mass, more preferably from 5 to 1% by mass of the total mass of the polyester. 5% by mass, particularly preferably 5 to 10% by mass. Also, if necessary, plasticizers, antioxidants or UV absorbers may be appropriately contained. A stabilizer such as a stabilizer, an antistatic agent, a surfactant such as a surfactant φ dye or a pigment, a lubricant for improving fluidity, an additive such as an inorganic chelating agent, etc. (b) Polyimine film. The imine is basically composed of a dehydration condensation reaction of an aromatic tetracarboxylic dianhydride and an aromatic diamine, preferably a pyromellitic dianhydride and a 4,4'-diaminodiphenyl ether. The dehydration condensation reactant was used as a main component. Commercially available polyimine has a dielectric constant of about 3.4 (10 Hz) and a dielectric tangent of about 0.01 (106 Ηζ). The polyimine may also contain other thermoplastic resins or additives. The content of the other thermoplastic resin is preferably from 5 to 20% by mass based on the total mass of the polyimine. (The laminated film plastic film 10 is not limited to a single layer, and may be a laminated film. For example, a laminated film may be formed by thermally welding a different plastic film or by adhering an adhesive layer such as polyethylene. (d) Film The thickness of the plastic film 10 is not particularly limited, but practically about 4 to 50 μm is suitable. If the thickness of the plastic film 10 is less than about 4 μm, the technical difficulty of -12-200820485, and if When the thickness exceeds about 50 μm, the graded junction type conductive film becomes too thick. (3) The first and second metal films of the metal film are different in resistance, and the resistance may be the first metal film 11a. The second metal thin film lib is large, and vice versa. The electric resistance of the first and second metal thin films 11a and 11b is preferably 2xl (T6n.cm or more, more preferably 4xl (r6Q, cm or more) at normal temperature. The first and second metal thin films 1 1 a, 1 1 b of metal, 1 may be copper [resistivity (2 〇 ° C): 1.7730 χ 1 (Τ 6 Ω · (: Γ η), aluminum [resistivity (2 0 °C) : 2·6548 χ1 (Γ6Ω.cm), silver [resistivity (2 0°C): 1.59χ1 (Γ6Ω • cm], gold [ Resistivity (20 ° C): 2·35 χ 10·6 Ω · cm], platinum [resistivity (2 0 . (:): 10 · 6 χ 10 · 6 Ω · οιη], nickel [resistivity (20 ° C): 6.84 χ 10 ·6Ω·(:πι), iron [resistivity (2 0°C): 9·71χ10·6Ω · cm], cobalt [resistivity (20°C): 6·24χ10·6Ω · cm], magnesium [resistance Rate (20 ° C): 4.45 χ 1 (Γ 6 Ω · cm), titanium [resistivity (20 ° C): 42 x l (T6Q.cm), chromium [resistivity (〇 ° C): 12·9 χ 10 · 6 Q. cml, Zinc [resistivity (20 ° C): 5 · 916 χ 10 · 6 Ω · (: πι), gallium [resistivity § (20 ° C): 17 · 4 χ 10 · 6 Ω · cm], molybdenum [resistivity (〇 ° C) : 5.2χ10·6Ω · cm], palladium [resistivity (20°C): 1〇·8χ1 (Γ6Ω·οιη], tin [resistivity (0°C): 11.0xl (T6Q.cm), and so on The alloy for forming the first and second metal thin films 11a and 11b may be selected from the above depending on the electric resistance. As a preferable combination, the first metal thin film 11a is exemplified. It is composed of copper and/or aluminum, and the second metal thin film 1 1 b is a combination of at least one selected from the group consisting of nickel, zinc, tin, titanium, cobalt, iron, and chromium. And the first metal thin film 11a-13-200820485 is composed of at least one selected from the group consisting of nickel, zinc, tin, titanium, cobalt, iron and chromium, and the second metal thin film 1 1 b is made of copper and/or A combination of aluminum. Preferably, the first metal thin film 11a is made of copper, the second metal thin film 1 1 b is made of a combination of nickel, and the first metal thin film 1 1 a is made of nickel, and the second metal thin film 1 is formed. 1 b is a combination of copper. In the case where the first metal thin film 11a has a larger electric resistance than the second metal thin film lib, and in the opposite case, the thickness of the gold-based thin film having a small electric resistance is relative to the metal thin film of the electric resistance. The thickness is preferably a ratio of 2/1 to 20/1. In particular, when both the first and second metal thin films lla' and lib are vapor deposited films, the ratio is more preferably from 3/1 to 15/1. In the case where the first metal film 11a has a larger resistance than the second metal film lib, and the opposite case, the thickness of the metal film having a small resistance is preferably 0.1 to 35 μm, and the resistance is large. The thickness of the metal film is preferably 0.01 to 20 μm. However, when both the first and second metal thin films |lla and 11b are vaporized films, the thickness of the metal film having a small electrical resistance is preferably 0·1 to 1 μm, more preferably 〇·1 5~0. 7 μ m, the optimum system is 0 · 2 to 0.6 μ m, and the thickness of the metal film having a large electric resistance is preferably ～70 nm, more preferably 20 to 60 nm. If the thickness of the metal vapor-deposited film of the resistor is less than Ο.ίμιη, the high-frequency transmission characteristics are poor. On the other hand, if it exceeds 〇7μηι, the frequency dependence of the high frequency transmission rate is poor. The first metal thin film 1 1 a is preferably formed by evaporation, plating or foil, and the second metal thin film 1 1 b is preferably formed by evaporation or plating. The vapor deposited film of metal is generally excellent in crystallinity, high in purity, and excellent in acid resistance. -14- 200820485 (4) Gradient composition layer (a) Metal film-plastic film For example, as shown in Fig. 1, in the graded composition layer 12, the metal atom 1 la5 partially enters the plastic molecule 10' of the film 10. between. Therefore, the composition ratio (concentration) of the metal atom 1 1 a' is reduced from the metal thin film 1 1 a to the plastic film 1 〇. The decrease in the composition ratio of the metal atom 1 1 a' is preferably substantially continuous in the thickness direction. "Substantial continuity" means that the composition ratio of the metal atom 1 1 a' in the thickness direction changes substantially monotonously, and this condition may not necessarily be satisfied locally. In the graded composition layer 12, it is considered that an amorphous phase is formed due to a decrease in the concentration of the metal atom 11a'. (b) First Metal Film - Second Metal Film For example, as shown in FIG. 1, in the graded composition layer 1 2 ', the second metal atom 1 lb' partially enters between the first metal 1 la' . Therefore, the composition ratio (concentration) of the first metal 11a' is reduced from the first metal thin film 11a to the second metal thin film lib, and the second metal atom lib' is from the second metal thin film 1 1 b to the first metal thin film 1 1 a reduction. In the graded composition layer 1 2 ', the change in the metal composition ratio is preferably substantially continuous in the thickness direction. In the gradation composition layer 12, since the concentrations of the two metal atoms 11a' and lib' are gradually changed, they are considered to be amorphous. In the conductive film having the amorphous graded composition layers 12 and 12', although the clear reason is unknown, it is found that the high-frequency transmission rate is increased by 1% or more, and the high-frequency transmission rate is approximately 〇%. Attenuation area. (5) Fine pores In order to obtain excellent high-frequency transmission characteristics, it is preferable to form fine pores 14 in the conductive bonding film of the graded bonding type -15-200820485. As shown in Figs. 3 and 4, the fine holes 14 preferably penetrate at least the metal thin films 1 1 a and 1 1 b. When the fine holes 14 are penetrated through the metal thin films 11a and 11b, the fine holes 14 can be formed in the middle of the plastic film 10. Further, as shown in Fig. 5, the fine holes 14 may also penetrate the tapered bonding type conductive film .1. The average opening diameter of the fine pores 14 is preferably 〇·1 to ΙΟΟμηι, more preferably 0.5 to 50 μπι. It is technically difficult to make the average opening diameter of the fine pores 14 less than 0.1 μm. When the average opening diameter of the fine pores 14 exceeds Β ΙΟΟμηι, the strength of the graded bonded conductive film 1 is lowered. In order to have a good transmission loss, the upper limit of the average opening diameter is preferably 20 μm, preferably 10 μm. The average opening diameter was determined by averaging the diameters of all the fine pores 14 in the region of 50 μm χ 50 μm at an arbitrary position of the tapered bonded conductive film using an atomic force microscope. The average distribution density of the fine pores 14 is preferably 500 pieces/cm2 or more, more preferably 5x1 03 pieces/em2 or more. If the average distribution density of the fine holes 14 is less than _500/cm2, the transmission loss becomes large. Although the reason is not clear, it is estimated that eddy current is generated in the vicinity of the fine hole 14 when the high-frequency signal is transmitted. In order to have a good transmission loss, the average density of the fine pores 14 is particularly preferably 1 x 10 4 to 3 x 10 5 / cm 2 , and most preferably I x 10 4 to 2 χ 105 / c m 2 . The average distribution density of the fine pores 14 is obtained by counting the number of fine pores 14 in the region of 50 μπιχ50 μπι at any position of the graded bonded conductive film using an atomic force microscope. The average is obtained by converting the number per 1 cm 2 . As shown in Fig. 5, when the micropores 14 are passed through the graded junction type conductive film -16-200820485, the metal thin films 1 1 a and 1 1 b are plastically deformed and enter the wall surface of the micropores 14. Thereby, the transmission loss becomes less. (6) Adhesive layer Adhesive layer 1 3 is, for example, a polyurethane resin, an epoxy resin, an acrylic resin, an ethylene-vinyl alcohol copolymer (EVA), a polyvinyl acetal resin [for example, polyvinyl formal, poly It is composed of vinyl butyral (P VB), modified PVB, etc., vinyl chloride resin, hot melt adhesive, sealing film, and the like. [2] Method of manufacturing graded junction type conductive film 1 The graded junction type conductive film 1 is formed by forming a first metal film 1 1 a by vapor deposition, plating or foil bonding on one or both sides of the plastic film 10. Then, the second metal thin film iib is formed by vapor deposition or plating to produce '. Since the gradation constituent layer 12' is formed between the first metal thin film Ua and the second metal thin film lib, it is not necessary to form the gradation composition layer 12 between the plastic film 1 〇 and the first metal thin film 1 1 a. For example, in the graded bonded conductive film 1 shown in FIG. 2, a plastic film is adhered to the first metal thin film 1 1 a made of a metal foil, and formed by vapor deposition or plating. The second metal film lib. (1) Metal film forming step (a) evaporation method
金屬的蒸鍍例如可藉由真空蒸鍍法、濺鍍法、離子鍍 敷法等的物理蒸鍍法、電漿CVD法、熱CVD法、光CVD 法等的化學氣相蒸鍍法等來進行。從經濟性的觀點來看， 較隹爲真空蒸鍍法。 爲了提高塑膠薄膜10與蒸鍍金屬的密著性，可預先對 -17- 200820485 塑膠薄膜1 〇施予兼任洗淨的表面處理。作爲表面處理， 有噴砂、壓花加工等的機械處理；電暈放電、電漿、火焰 處理、UV照射等的物理化學處理；溶劑、酸性溶液、鹼 性溶液等的化學處理等。亦可對表面處理後的薄膜1 0作 加熱或真空加熱處理，以去除薄膜1 0中的水分或氣體成 分。 真空蒸鍍法可爲半連續法（在真空中進行薄膜的送出、 蒸鍍及捲繞之方法）、或連續法（在真空中僅進行蒸鍍的方 法）中任一者。各皆在1〇·2 Pa左右的高真空下使金屬蒸氣 凝縮在塑膠薄膜10或第一金屬薄膜lla上。較佳爲於第一 金屬薄膜11a的蒸鍍後，立即蒸鍍第二金屬薄膜nb。 於化學氣相蒸鍍法（CVD法）時，較佳爲可在低溫形成 t薄膜的電漿CVD法。於電漿CVD法中，產生低壓反應氣 體的電黎以形成金屬蒸鍍層，或於減壓下藉由反應氣體的 分解而形成金屬蒸鍍層。作爲起始原料，使用鹵化金屬、 有機金屬、有機金屬錯合物、金屬烷氧化物等，再者將氮 、氣、一氧化一氮、氧、一氧化碳、甲烷、氫等的反應性 氣體與氨、氬等的載體氣體一起使用。 於形成銅的蒸鑛層時，作爲原料氣體，例如使用乙醯 丙酮化銅[Gix(aeae)2]。又，於形成錦的蒸鍍層時，作爲原 料氣體’例如使用3甲基銘⑷（eg)。再者，於形成錬 的蒸鑛層時，作爲原料氣體，例如使用氯化鎮氣體。 (b)鍍敷法 鍰敷係藉由電解鑛敷法、無電解鍍敷法等來進行。鍍 -18- 200820485 敷法的細節，例如在「鍍敷技術手冊」（東京鍍金材料協同 組合技術委員會編）等中有揭示。亦可於形成無電解鍍敷層 後，形成電解鍍敷層。 於藉由鍍敷法來形成金屬薄膜1 1 a、1 1 b時，亦可在塑 膠薄膜1 0或第一金屬薄膜1 1 a上設置基底層。於無電解鍍 敷時，基底層可爲金屬蒸鍍層、含鍍敷觸媒的聚合物黏結 層、含觸媒前驅物的聚合物黏結層等。含觸媒的基底層例 如是含浸有Pd觸媒的聚合物黏結層、加有還原性金屬粒 ^ 子（例如Ni、Co、Rh、Pd等的膠體）的聚合物黏結層等。 例如，於無電解銅鍍敷時，首先在塑膠薄膜1 〇上設置 含抗靜電劑、金屬粒子、碳等的樹脂層、導電性金屬氧化 物層、或金屬薄膜層等的導電性基底層後，浸漬於硫酸銅 鍍敷浴等的無電解銅鍍敷液中。無電解銅鍍敷液的組成本 身係眾所周知的，因此省略其說明。銅鍍敷層亦可僅藉由 無電解鍍敷法來形成，但爲了提高效率，較佳爲組合無電 _ 解鍍敷法與電解鍍敷法。於無電解鎳鍍敷中例如使用鹼鎳 液，於電解鎳鍍敷中例如使用瓦特（watt)鍍浴，胺磺酸浴 等。 (c)形成金屬帶狀薄膜的情況 如第6圖〜第8圖所示的金屬帶狀薄膜11a、lib，係 可藉由⑴在塑膠薄膜10上一樣地形成金屬薄膜11a、lib 後，塗佈帶狀的光阻，作曝光後蝕刻的方法，（ii)在塑膠薄 膜1 〇上，預先以具有帶狀開口部的方式來塗佈光阻，曝 光後藉由蒸鍍法或鍍敷法來形成金屬薄膜1 1 a、1 1 b，去除 19- 200820485 光阻層的方法等而形成。 (2)微細孔的形成 如第3〜5圖所示地，於漸變接合式導電膜的金屬薄膜 11a、11b形成多數的微細孔14時，使用所謂的多孔加工 法。多孔加工法例如在日本發明專利第20634 1 1號、日本 發明專利第2542772號、日本發明專利第2643 73 0號、日 本發明專利第2703151號、特開平9-99492號、特開平9_ 57860號、特開2002-059487號等中有記載。例如，於具 ® · 有銳角部的多數莫氏硬度5以上之粒子附著於表面的第一 輥、與表面爲平滑的第二輥之間，使金屬薄膜11a、llb在 第一輥之側，在均一推壓力下使漸變接合式導電膜通過。 作爲第二輥，例如可以使用鐵系輥、施有鍍Ni、鍍Cr等 的鐵系輥、不銹鋼系輥、特殊鋼輥等。微細孔1 4的平均 開口徑及平均分布密度，係可藉由調整第一輥的微粒子之 粒徑及密度來調整。藉由第一輥及第二輥間的推壓力，決 _ 定微細孔1 4的深度、及是否貫穿漸變接合式導電膜。微 細孔1 4較佳爲均勻設置在漸變接合式導電膜i。於高密度 地形成微細孔1 4時’較佳爲使用串列設置有由第一及第 二輥所構成的二個以上單元之多孔加工裝置。 於形成多數的微細孔14時，微細孔1 4的壁面金屬薄 膜1 1 a、1 1 b係塑性變形，至少部分地覆蓋微細孔1 4的壁 面。 [3]高頻傳送線路 以下詳細說明本發明的高頻傳送線路。 -20- 200820485 (1)第一高頻傳送線路 第9圖所示的第一高頻傳送線路係爲二條帶狀漸變接 合式導電膜1、1平行地配置在介電基板2之上面。帶狀 漸變接合式導電膜1、1係藉由眾所周知的方法將漸變接 合式導電膜1裁切者。由於在二條帶狀漸變接合式導電膜 1、1之間電場集中，故可效率佳地傳送高頻信號。爲了得 到優異的高頻傳送性，介電基板2較佳爲在二條帶狀漸變 接合式導電膜1、1之間具有凸部20。就配置於支持體2 B 上的帶狀、漸變接合式導電膜1、1而言，金屬薄膜係可在 上方或下方。 各漸變接合式導電膜1、1的寬度幻，係按照高頻信號 的頻率及振幅等來適度設定，但較佳爲1〜〗0rnm，更佳爲 1.5〜7mm。寬度I若爲1mm以上，則具有充分的高頻信 號傳達性。又，寬度d i若超過1 0mm，則得不到高頻信號 傳達性的進一步提高。 二條帶狀漸變接合式導電膜1、1的間隔d2較佳爲1〜 B 1 0 m m，更佳爲1 · 5〜7 m m。間隔d 2若小於1 m m，則高頻信 號傳達性不足；另一方面，若超過1 〇 m m，則輻射損失多 。凸部20的高度h較佳爲1〜10mm，更佳爲1.5〜7mm。 用於形成支持體2的介電體，例如係由樹脂（亦可與塑 膠薄膜1〇相同）、氧化鋁等的陶瓷等所構成。爲了將漸變 接合式導電膜1、1固定於介電基板2，較佳爲經由黏著層 3 (2)第二局頻傳送線路 -21- 200820485 於弟ίο圖所不的弟一'局頻傳送線路中’ —^條帶狀漸變 接合式導電膜1、1係配置在具有C字狀截面的介電基板2 之對向內面。於二條帶狀漸變接合式導電膜1、1之間電 場集中，可效率佳地傳送高頻信號。如第1 〇圖所示地， 於二條帶狀漸變接合式導電膜1、1在單面具有金屬薄膜 1 1 a、1 1 b時，較佳爲兩金屬薄膜1 1 b、1 1 b以相對的方式 作配置。就介電基板2而言，只要二條帶狀漸變接合式導 電膜可相對地配置，並不限定於圖示的形狀。 ® 各漸變接合式導電膜1、1的寬度係可以與第一高頻傳 送線路相同。二條帶狀漸變接合式導電膜1、1的間隔d3 較佳爲1〜10mm，更佳爲1.5〜7mm。間隔d3若小於1mm ，則高頻信號傳達性不足，另一方面若超過1 0mm，則輻 射損失多。 (3)第三高頻傳送線路 於第1 1圖所示的第三高頻傳送線路中，二條帶狀漸變 接合式導電膜1、1係配置在具有L字狀截面的介電基板2 B 之正交內面。於二條帶狀漸變接合式導電膜1、1之間電 場集中，可效率佳地傳送高頻信號。就介電基板2而言， 只要二條帶狀漸變接合式導電膜1、1可以正交的方式作 配置，並不限定於圖示的形狀。 各漸變接合式導電膜1、1的寬度係可以與第二高頻傳 送線路相同。二條帶狀漸變接合式導電膜1、1的間隔d4 較佳爲1〜1 0 m m，更佳爲1 · 5〜7 m m。間隔d 4若小於1 m m ，則高頻信號傳達性不足，另一方面若超過1 〇mm，則輻 -22- 200820485 射損失多。 (4) 第四高頻傳送線路 第1 2圖所示的第四高頻傳送線路係以漸變接合式導電 膜1被覆圓柱狀介電基板2的介電圓形導波管。 (5) 第五高頻傳送線路 第1 3圖所示的第五高頻傳送線路係於圓筒狀介電基板 2的內面設置由漸變接合式導電膜所構成的中心導體i， 在外面設置由漸變接合式導電膜所構成的接地導體1，之同 m | 軸線路。同軸線路的內徑及外徑係可按照高頻信號的頻率 來適宜設定。亦可爲中心導體1及接地導體1’中僅一者使 用漸變接合式導電膜。 [4]高頻濾波器 本發明的高頻濾波器係具有於上述任一高頻傳送線路 設置輸入端子及輸出端子而得的簡單構造。第1 4圖顯示 該高頻濾波器的一例。於第二金屬薄膜1 1 b具有比第一金 屬薄膜11a大的電阻時，較佳爲在第一金屬薄膜lla設置 B 端子4。本發明的高頻濾波器具有優異的高頻傳達率及g 照需要的異方向性，適用作爲頻帶去除濾波器或防駭客用 濾波器。 藉由以下的實施例來更詳細說明本發明’惟本發明不 受此等所限定。 實雄例1 (1)漸變接合式導電膜的製作 於二軸拉伸聚醯亞胺薄膜[厚度：2511111，熔點：無，玻 -23- 200820485 璃轉移溫度：2 80°C以上，商品名：「Kapton Η」（東麗杜 邦（股）製）]的一面，黏著厚度30μπι的乳製銅箔。於銅箔上 ，藉由電解鍍敷法形成厚度1 5 μπι的鎳層。將所得到的漸 變接合式導電膜裁切成5mm的寬度。 (2) 高頻傳送線路的製作 將2條帶狀漸變接合式導電膜，以聚醯亞胺薄膜成爲 支持體側的方式，平行地黏著於氯乙烯樹脂製支持體，以 製作第 9圖所示的平行線路型之高頻傳送線路（長度： 0 50cm，二條帶狀漸變接合式導電膜之間隔d2 :3mm)。 (3) 高頻傳達率的測定 (a)高頻振盪器的寄生（spurious)特性測定 (i) 寄生特性測定用高頻傳送線路的製作The vapor deposition of the metal can be carried out, for example, by a physical vapor deposition method such as a vacuum deposition method, a sputtering method, or an ion plating method, a plasma vapor deposition method such as a plasma CVD method, a thermal CVD method, or a photo CVD method. get on. From the economic point of view, it is more like vacuum evaporation. In order to improve the adhesion between the plastic film 10 and the vapor-deposited metal, the -17-200820485 plastic film 1 can be preliminarily applied to the surface of the cleaning. As the surface treatment, there are mechanical treatment such as sand blasting and embossing; physicochemical treatment such as corona discharge, plasma, flame treatment, and UV irradiation; chemical treatment such as a solvent, an acidic solution, or an alkali solution. The surface treated film 10 may also be heated or vacuum heated to remove moisture or gas components from the film 10. The vacuum deposition method may be either a semi-continuous method (a method of feeding a film in a vacuum, a method of vapor deposition and winding), or a continuous method (a method of performing only vapor deposition in a vacuum). Each of the metal vapors is condensed on the plastic film 10 or the first metal film 11a under a high vacuum of about 1 〇 2 Pa. Preferably, the second metal thin film nb is vapor-deposited immediately after vapor deposition of the first metal thin film 11a. In the case of the chemical vapor deposition method (CVD method), a plasma CVD method in which a t thin film can be formed at a low temperature is preferred. In the plasma CVD method, a low-pressure reaction gas is generated to form a metal vapor-deposited layer, or a metal vapor-deposited layer is formed by decomposition of a reaction gas under reduced pressure. As a starting material, a metal halide, an organic metal, an organic metal complex, a metal alkoxide, or the like, and a reactive gas such as nitrogen, gas, nitric oxide, oxygen, carbon monoxide, methane, hydrogen, etc., are used. A carrier gas such as argon is used together. In the case of forming a copper-steamed layer, as the material gas, for example, copper acetylacetonate [Gix(aeae) 2] is used. Further, in the case of forming a vapor deposition layer of brocade, as the raw material gas, for example, dimethyl group (4) (eg) is used. Further, in the case of forming a vaporized ore layer of ruthenium, for example, a chlorination gas is used as the material gas. (b) Plating method The enamel coating is carried out by an electrolytic ore plating method, an electroless plating method, or the like. Plating -18- 200820485 The details of the coating method are disclosed, for example, in the "Plating Technical Manual" (edited by the Tokyo Gold-plated Materials Coordination Technical Committee). It is also possible to form an electrolytic plating layer after forming an electroless plating layer. When the metal thin film 1 1 a, 1 1 b is formed by a plating method, a base layer may be provided on the plastic film 10 or the first metal thin film 1 1 a. In the case of electroless plating, the underlayer may be a metal deposition layer, a polymer binder layer containing a plating catalyst, a polymer binder layer containing a catalyst precursor, or the like. The catalyst-containing underlayer is, for example, a polymer binder layer impregnated with a Pd catalyst, a polymer binder layer to which a reducing metal particle (e.g., a colloid of Ni, Co, Rh, Pd, or the like) is added. For example, in the electroless copper plating, first, a conductive underlayer such as a resin layer containing an antistatic agent, metal particles, or carbon, a conductive metal oxide layer, or a metal thin film layer is provided on the plastic film 1 〇. It is immersed in an electroless copper plating solution such as a copper sulfate plating bath. The composition of the electroless copper plating solution is well known in the art, and therefore the description thereof will be omitted. The copper plating layer may be formed only by electroless plating, but in order to improve the efficiency, it is preferable to combine the electroless plating method and the electrolytic plating method. For the electroless nickel plating, for example, an alkali nickel solution is used, and in electrolytic nickel plating, for example, a watt plating bath, an amine sulfonic acid bath or the like is used. (c) In the case of forming a metal strip film, the metal strip films 11a and 11b shown in Figs. 6 to 8 can be formed by (1) forming the metal thin films 11a and lib on the plastic film 10 in the same manner. a strip-shaped photoresist, a method of etching after exposure, (ii) coating the photoresist on the plastic film 1 预先 in advance with a strip-shaped opening, and performing evaporation or plating after exposure It is formed by forming a metal thin film 1 1 a, 1 1 b, a method of removing the 19-200820485 photoresist layer, and the like. (2) Formation of fine pores As shown in Figs. 3 to 5, when a plurality of fine pores 14 are formed in the metal thin films 11a and 11b of the graded bonded conductive film, a so-called porous processing method is used. The porous processing method is, for example, Japanese Patent No. 20634 1 1 , Japanese Invention Patent No. 2542772, Japanese Invention Patent No. 2643 73 0, Japanese Invention Patent No. 2701151, Special Kaiping 9-99492, and Special Kaiping 9_57860, JP-A-2002-059487 and the like are described. For example, between the first roller having a majority of Mohs hardness of 5 or more having an acute angle attached to the surface and the second roller having a smooth surface, the metal thin films 11a and 11b are on the side of the first roller. The graded bonded conductive film was passed under uniform pressing force. As the second roll, for example, an iron-based roll, an iron-based roll coated with Ni, Cr-plated, or the like, a stainless steel roll, a special steel roll, or the like can be used. The average opening diameter and the average distribution density of the fine pores 14 can be adjusted by adjusting the particle size and density of the fine particles of the first roll. By the pressing force between the first roller and the second roller, the depth of the fine hole 14 and the penetration of the tapered bonding type conductive film are determined. The fine pores 14 are preferably uniformly disposed on the graded junction type conductive film i. When the fine pores 14 are formed at a high density, it is preferable to use a porous processing apparatus in which two or more units composed of the first and second rolls are arranged in series. When a large number of fine holes 14 are formed, the wall metal films 1 1 a and 1 1 b of the fine holes 14 are plastically deformed to at least partially cover the wall surface of the fine holes 14 . [3] High-frequency transmission line The high-frequency transmission line of the present invention will be described in detail below. -20- 200820485 (1) First high-frequency transmission line The first high-frequency transmission line shown in Fig. 9 is such that two strip-shaped gradual junction type conductive films 1, 1 are arranged in parallel on the upper surface of the dielectric substrate 2. The strip-shaped graded junction type conductive film 1, 1 is obtained by cutting the graded junction type conductive film 1 by a well-known method. Since the electric field is concentrated between the two strip-shaped tapered junction type conductive films 1, 1, high-frequency signals can be efficiently transmitted. In order to obtain excellent high-frequency transfer properties, the dielectric substrate 2 preferably has a convex portion 20 between the two strip-shaped tapered bonded conductive films 1 and 1. For the strip-shaped, tapered junction type conductive film 1, 1 disposed on the support 2 B, the metal thin film can be above or below. The width of each of the tapered junction-type conductive films 1 and 1 is appropriately set in accordance with the frequency and amplitude of the high-frequency signal, but is preferably 1 to 0 nm, and more preferably 1.5 to 7 mm. When the width I is 1 mm or more, sufficient high-frequency signal transmission is obtained. Further, if the width d i exceeds 10 mm, the high-frequency signal transmission property cannot be further improved. The interval d2 of the two strip-shaped tapered junction type conductive films 1, 1 is preferably from 1 to B 10 m m, more preferably from 1 5 to 7 m m. If the interval d 2 is less than 1 m m, the high-frequency signal is insufficient in communication; on the other hand, if it exceeds 1 〇 m m, the radiation loss is large. The height h of the convex portion 20 is preferably from 1 to 10 mm, more preferably from 1.5 to 7 mm. The dielectric for forming the support 2 is made of, for example, a resin (may be the same as the plastic film), a ceramic such as alumina, or the like. In order to fix the tapered bonding type conductive film 1 and 1 to the dielectric substrate 2, it is preferable to transmit the second local frequency transmission line through the adhesive layer 3 (2) to the second local frequency transmission line-21-200820485. The strip-shaped junction-type conductive films 1 and 1 in the line are disposed on the inward facing surface of the dielectric substrate 2 having a C-shaped cross section. The electric field is concentrated between the two strip-shaped tapered bonded conductive films 1 and 1, and high-frequency signals can be efficiently transmitted. As shown in FIG. 1 , when the two strip-shaped tapered conductive films 1 and 1 have metal thin films 1 1 a and 1 1 b on one side, it is preferable that the two metal thin films 1 1 b and 1 1 b are The opposite way is configured. The dielectric substrate 2 is not limited to the illustrated shape as long as the two strip-shaped tapered junction-type conductive films are disposed to face each other. ® The width of each of the graded junction conductive films 1, 1 can be the same as that of the first high frequency transmission line. The interval d3 of the two strip-shaped tapered bonding type conductive films 1, 1 is preferably from 1 to 10 mm, more preferably from 1.5 to 7 mm. When the interval d3 is less than 1 mm, the high-frequency signal transmission property is insufficient, and if it exceeds 10 mm, the radiation loss is large. (3) Third high-frequency transmission line In the third high-frequency transmission line shown in Fig. 1, the two strip-shaped tapered junction-type conductive films 1, 1 are disposed on a dielectric substrate 2 B having an L-shaped cross section. Orthogonal inner faces. The electric field is concentrated between the two strip-shaped tapered bonded conductive films 1 and 1, and high-frequency signals can be efficiently transmitted. The dielectric substrate 2 is not limited to the illustrated shape as long as the two strip-shaped tapered conductive films 1 and 1 can be arranged in an orthogonal manner. The width of each of the tapered junction type conductive films 1, 1 may be the same as that of the second high frequency transmission line. The interval d4 of the two strip-shaped tapered junction type conductive films 1, 1 is preferably from 1 to 10 m m, more preferably from 1 to 5 m 7 m. If the interval d 4 is less than 1 m m , the high-frequency signal transmission is insufficient. On the other hand, if it exceeds 1 〇 mm, the radiation loss of the -22-200820485 is large. (4) Fourth high-frequency transmission line The fourth high-frequency transmission line shown in Fig. 2 is a dielectric circular waveguide in which the cylindrical dielectric substrate 2 is covered with the gradual bonding type conductive film 1. (5) The fifth high-frequency transmission line of the fifth high-frequency transmission line is provided on the inner surface of the cylindrical dielectric substrate 2 with a center conductor i composed of a graded junction type conductive film, on the outside. A ground conductor 1 composed of a graded junction type conductive film is provided, which is the same as the m | axis line. The inner diameter and the outer diameter of the coaxial line can be appropriately set in accordance with the frequency of the high frequency signal. It is also possible to use a graded junction type conductive film for only one of the center conductor 1 and the ground conductor 1'. [4] High-frequency filter The high-frequency filter of the present invention has a simple structure in which an input terminal and an output terminal are provided in any of the above-described high-frequency transmission lines. Fig. 14 shows an example of the high frequency filter. When the second metal thin film 1 1 b has a larger electric resistance than the first metal thin film 11a, it is preferable to provide the B terminal 4 in the first metal thin film 11a. The high-frequency filter of the present invention has excellent high-frequency transmission rate and different directionality required for g, and is suitable as a band removal filter or a tamper-resistant filter. The invention is illustrated in more detail by the following examples, which are not to be construed as limited. Example 1 (1) Fabrication of a graded bonded conductive film on a biaxially stretched polyimide film [Thickness: 2511111, Melting point: None, Glass-23-200820485 Glass transfer temperature: 2 80 °C or more, trade name : One side of "Kapton Η" (made by Toray Dupont Co., Ltd.), adhered to a copper foil with a thickness of 30 μm. On the copper foil, a nickel layer having a thickness of 15 μm was formed by electrolytic plating. The resulting tapered bonded conductive film was cut into a width of 5 mm. (2) Production of a high-frequency transmission line Two strip-shaped gradual junction-type conductive films were bonded to a vinyl chloride resin support in a manner in which the polyimide film was supported on the support side to produce a pattern 9 The parallel line type high frequency transmission line (length: 0 50 cm, interval between two strip-shaped graded junction conductive films d2: 3 mm). (3) Measurement of high-frequency transmission rate (a) Measurement of spurious characteristics of high-frequency oscillator (i) Production of high-frequency transmission line for measurement of parasitic characteristics
於二軸拉伸 PET薄膜[厚度：12μπι，介電常數： 3·2(1ΜΗζ)，介電正切：1·0%(1ΜΗζ)，熔點：265 °C，玻璃 ，轉移溫度：75°C，商品名：「Lumirror」（東麗（股）製）]的 一面，藉由蒸鍍法來形成厚度〇.3μπι的銅層。將所得到的 Β 導電膜裁切成5mm的寬度。將2條帶狀導電膜，以PET 薄膜成爲支持體側的方式，平行地黏著於氯乙烯樹脂製支 持體，與上述同樣地，以製作平行線路型的寄生特性測定 用高頻傳送線路（長度：50cm，二條帶狀導電膜的間隔d2 :3mm)。 (ii) 寄生特性測定 如第1 5圖所示，經由連接用電纜7 0，在寄生特性測定 用高頻傳送線路的導電膜1”、1”之一端連接高頻振盪器5- -24- 200820485 ，在另一端連接高頻受信器6。將用於防反射波的終端電 阻R( 100 Ω)設置在受信器6的面前。如第16圖所示，高頻 振盪器5係以成爲對應於電壓控制振盪器（VC0)5 1、傳送 的信號頻率作切換的方式，具備3個高頻振盪模組52、 52’、52”及2個高頻放大器53、53’。高頻振盪器5係可 傳送 100 〜200MHz、260 〜5 50MHz 及 600 〜l，050MHz 之範 圍的信號。由振盪器5傳送100、200、300、500、700及 1，0 0 0ΜΗζ的信號，調查寄生特性。結果示於表丨中。此高 頻振盪器5係諧波的發生少，沒有諧波以外的寄生。 [表1] 基本波的 頻率 (MHz) 第二諧波 第三諧波 第四諧波 諧波以外的 寄生 頻率 (MHz) 強度 (dB) 頻率 (MHz) 強度 (dB) 頻率 (MHz) 強度 (dB) 100 200 -35 300 -45 400 -60 4ττΤ. ιΐιί y\\\ 200 400 -30 600 -35 800 -70 daC mu： y\\\ 300 600 -27 900 -33 1,200 -35 4rrr ιΤΓΓ /\\\ 500 1,000 -33 1,500 -25 2,000 -35 4xrr ΙΪΤΓ j\\\ 700 1,400 -35 2,100 -33 一 一 >fnT lit 17 j\\\ 15000 2,000 -40 一 — — — 4ϊττ ΙΙΠ j\\\ (b)傳達係數的設定 以連接用電纜7〇(參照第15圖）來連接振盪器5與受信 器6，從振盪器5以l，〇V的輸出振幅傳送120〜l5〇5〇MHz 的頻率之信號。如第17(a)圖所示，爲由振盪器5的輸出 端子50、50所出來的信號以從（+)側輸出的方式傳送之情 況（信號圖案1 )，及如第1 7(b)圖所示，爲由振盪器5的輸 -25- 200820485 出端子50、50所出來的信號以從（-）側輸出的方式傳送之 情況（信號圖案2 :對於信號圖案1而言，相位係偏移i /2 波長），對此兩者求得輸入振幅。依照下式：傳達係數=輸 入振幅（V) /輸出振幅（V)，求得各測定頻率的傳達係數， 製作與各信號圖案1及2有關的頻率-傳達係數曲線。 (c)高頻傳達率的測定 於上述（2)所製作的具有帶狀漸變接合式導電膜的高頻 傳送線路，與上述同樣地，連接上述高頻振盪器5及高頻 ® 受信器.6，將終端電阻R( 1〇〇Ω)設置在受信器6的面前（參 照第1 5圖）。由振盪器5傳送以1 · 0 V的輸出振幅（V)所振 盪的120〜1，0 5 0MHz之信號（信號圖案1及2)，求得輸入 振幅（V)。使用由上述頻率-傳達係數曲線所求得的傳達係 數，依照下式：高頻傳達率（％) =輸入振幅（V)/ (輸出振幅 (V)x傳達係數）χ100，算出各測定頻率的高頻傳達率（％卜 繪製頻率與高頻傳達率的關係，結果示於第18圖中。由 第18圖可知，對於信號圖案2而言，430〜490MHz及65 0 〜7 5 0MHz的區域係大致被去除。於傳送信號圖案1時， 尤其對於700〜1，050ΜΗζ的區域而言，傳達性優異。其中 ，在7 1 0〜8 1 ΟΜΗζ及940〜1，050ΜΗζ的區域，高頻傳達 率係100%以上。 實施例2 於上述PET薄膜的一面，分別藉由蒸鍍法形成厚度 0·3μιη的銅層，形成厚度40nm的鎳層。將所得到的漸變 接合式導電膜裁切成5 mm的寬度。除了將2條帶狀漸變接 -26- 200820485 合式導電膜，以鎳層成爲支持體側的方式，平行地黏著於 氯乙烯樹脂製支持體以外，與實施例1同樣地，製作平行 線路型的高頻傳送線路（長度：50cm，二條帶狀漸變接合 式導電膜的間隔d2: 3mm)。如第19圖所示，去除高頻傳 送線路的兩端部之PET薄膜10及支持體2，於鎳層lib之 下的黏著層3接合絕緣體8的狀態下，使用鱷口夾7，於 漸變接合式導電膜1、1的銅層11a連接上述高頻振盪器5 及高頻受信器6以外，係與實施例1同樣地，調查高頻傳 達率（％)。結果示於第2 0圖中。由第2 0圖可知，對於信 號圖案2而言，670〜840MHz的區域係大致被去除。對於 信號圖案 1及 2兩者而言，260〜400MHz及 95 0〜Biaxially stretched PET film [thickness: 12μπι, dielectric constant: 3·2 (1ΜΗζ), dielectric tangent: 1·0% (1ΜΗζ), melting point: 265 °C, glass, transfer temperature: 75 °C, Product name: On one side of "Lumirror" (made by Toray Industries Co., Ltd.), a copper layer having a thickness of 33 μm is formed by a vapor deposition method. The obtained Β conductive film was cut into a width of 5 mm. Two strip-shaped conductive films are bonded to a support made of a vinyl chloride resin in parallel so that the PET film is on the side of the support, and a high-frequency transmission line for measuring parasitic characteristics of a parallel line type is produced in the same manner as described above. : 50 cm, interval between two strip-shaped conductive films d2 : 3 mm). (ii) Measurement of the parasitic characteristics As shown in Fig. 15, the high-frequency oscillator 5-24 is connected to one end of the conductive film 1", 1" of the high-frequency transmission line for parasitic characteristic measurement via the connection cable 70. In 200820485, the high frequency receiver 6 is connected at the other end. The terminal resistance R (100 Ω) for the anti-reflection wave is set in front of the receiver 6. As shown in Fig. 16, the high-frequency oscillator 5 is provided with three high-frequency oscillation modules 52, 52', 52 in order to switch the signal frequency corresponding to the voltage-controlled oscillator (VC0) 51. And two high frequency amplifiers 53, 53'. The high frequency oscillator 5 can transmit signals in the range of 100 to 200 MHz, 260 to 5 50 MHz, and 600 to 1,050 MHz. The oscillator 5 transmits 100, 200, 300, The signals of 500, 700, and 1,0 0 ΜΗζ were investigated for parasitic characteristics. The results are shown in Table 。. The occurrence of harmonics in the high-frequency oscillator 5 is small, and there is no parasitic other than harmonics. [Table 1] Basic wave Frequency (MHz) Second harmonic third harmonic The parasitic frequency other than the fourth harmonic (MHz) Intensity (dB) Frequency (MHz) Intensity (dB) Frequency (MHz) Intensity (dB) 100 200 -35 300 -45 400 -60 4ττΤ. ιΐιί y\\\ 200 400 -30 600 -35 800 -70 daC mu: y\\\ 300 600 -27 900 -33 1,200 -35 4rrr ιΤΓΓ /\\\ 500 1,000 -33 1,500 -25 2,000 -35 4xrr ΙΪΤΓ j\\\ 700 1,400 -35 2,100 -33 One &one;fnT lit 17 j\\\ 15000 2,000 -40 One — — — 4ϊττ ΙΙΠ j\\\ (b) The setting of the coefficient is connected to the oscillator 5 and the receiver 6 by the connection cable 7 (refer to Fig. 15), and the signal of the frequency of 120 to 15 〇 5 〇 MHz is transmitted from the oscillator 5 with an output amplitude of 〇V. As shown in Fig. 17(a), the signal from the output terminals 50, 50 of the oscillator 5 is transmitted from the (+) side (signal pattern 1), and as in the 1st 7 ( b) As shown in the figure, the signal from the output terminals 50, 50 of the oscillator 5 is transmitted from the (-) side (signal pattern 2: for signal pattern 1, The phase offset is i /2 wavelength), and the input amplitude is obtained for both. According to the following formula: transmission coefficient = input amplitude (V) / output amplitude (V), the transmission coefficient of each measurement frequency is obtained, and each The frequency-transmission coefficient curve related to the signal patterns 1 and 2. (c) Measurement of the high-frequency transmission rate The high-frequency transmission line having the strip-shaped tapered junction type conductive film produced in the above (2) is connected in the same manner as described above. The high frequency oscillator 5 and the high frequency ® receiver 6. are arranged to set the terminating resistor R (1 〇〇 Ω) to the receiver 6 Before (refer to FIG. 1 5). A signal of 120 to 1,0 0 MHz (signal patterns 1 and 2) oscillated by an output amplitude (V) of 1 · 0 V is transmitted from the oscillator 5, and an input amplitude (V) is obtained. Using the transmission coefficient obtained by the frequency-conveyance coefficient curve described above, the frequency of each measurement frequency is calculated according to the following equation: high frequency transmission rate (%) = input amplitude (V) / (output amplitude (V) x transmission coefficient) χ 100 The relationship between the high frequency transmission rate (% of the drawing frequency and the high frequency transmission rate, the result is shown in Fig. 18. As can be seen from Fig. 18, for the signal pattern 2, the area of 430 to 490 MHz and 65 0 to 75 50 MHz It is substantially removed. When the signal pattern 1 is transmitted, especially in the area of 700 to 1,050 Å, the conveyance is excellent, and in the region of 7 1 0 0 8 1 ΟΜΗζ and 940 〜 1 050 ,, the high frequency is transmitted. The rate was 100% or more. Example 2 A copper layer having a thickness of 0.3 μm was formed on one surface of the PET film by a vapor deposition method to form a nickel layer having a thickness of 40 nm. The obtained graded junction type conductive film was cut into In the same manner as in the first embodiment, in the same manner as in the first embodiment, the two-layered belt-shaped -26-200820485 conductive film is bonded to the vinyl chloride resin support in parallel with the nickel layer serving as the support side. Making parallel line type high frequency transmission Road (length: 50 cm, spacing of two strip-shaped tapered bonding conductive films d2: 3 mm). As shown in Fig. 19, the PET film 10 and the support 2 at both ends of the high-frequency transmission line are removed, and the nickel layer lib In the state in which the adhesive layer 3 is bonded to the insulator 8, the crocodile clip 7 is used, and the high-frequency oscillator 5 and the high-frequency receiver 6 are connected to the copper layer 11a of the tapered junction-type conductive films 1 and 1 In the same manner, the high-frequency transmission rate (%) was investigated in the same manner. The results are shown in Fig. 20. It can be seen from Fig. 20 that the signal pattern 2 is substantially removed in the region of 670 to 840 MHz. 1 and 2, 260~400MHz and 95 0~
V 1，050MHz的區域之傳達性優異。其中，對於信號圖案2而 言，在260〜3 80MHz及970〜l，050MHz的區域，高頻傳 達率係100%以上。 實施例3 與實施例2同樣地，在PET薄膜的一面，形成厚度 0·3 μπι的鋼層及厚度40 nm的鎳層。以金屬薄膜成爲第一 輥側的方式，使所得到的漸變接合式導電膜通過固定在定 位的第一輥（電沈積有粒徑1 5〜3 0 μπι的合成鑽石微粒子者 )與金屬製第二輥之間。所得到的多孔質漸變接合式導電膜 係微細孔僅形成在鎳層及銅層，微細孔的平均開口徑爲 3 μπι，微細孔的平均分布密度爲5xl〇4個/cm2。將多孔質 漸變接合式導電膜裁切，作成5 m m的寬度，與實施例1同 樣地’製作平行線路型的高頻傳送線路。對此高頻傳送線 -27- 200820485 路，與實施例2同樣地’調查高頻傳達率（％) °結果示於 第21圖中。由第21圖可知，對於信號圖案2而言，680 〜740MHz的區域係大致被去除。對於信號圖案1及2而 言，2 6 0〜4 0 0 Μ Η z及7 8 0〜8 6 0 Μ Η ζ的區域之傳達性優異 。對於信號圖案2而言，在260〜400MHz、760〜840MHz 及990〜1，050“1^的區域，高頻傳達率係1〇〇°/。以上。 實施例4 於上述PET薄膜的一面，分別藉由蒸鍍法形成厚度 ® 5 Onm的鎳層，形成厚度0.45 μιη的銅層。於所得到的漸變 接合式導電膜中，與實施例3同樣地形成微細孔。所得到 的多孔質漸變接合式導電膜係微細孔僅形成在銅層及鎳層 ，微細孔的平均開口徑爲3 μπι，微細孔的密度爲5 X 1 04個 /cm2。將多孔質漸變接合式導電膜裁切成5mm的寬度。除 了將2條帶狀多孔質漸變接合式導電膜，以PET薄膜成爲 支持體側的方式，平行地黏著於氯乙烯樹脂製支持體以外 ，與實施例1同樣地，製作平行線路型的高頻傳送線路（長 i 度：50cm，二條帶狀漸變接合式導電膜的間隔d2: 3mm) 。對高頻傳送線路，與實施例1同樣地作，調查高頻傳達 率（％)。結果示於第22圖中。由第22圖可知，對於信號 圖案1而言，480〜5 3 0MHz的區域係大致被去除，對於信 號圖案2而言，650〜700MHz的區域係大致被去除。對於 信號圖案 1 而言，130〜160 MHz、2 60〜30 0 MHz、380〜 400MHz、650〜720MHz及 920〜l，OOOMHz的區域之傳達 性優異。對於信號圖案 2而言，130〜180MHz、260〜 -28- 200820485 3 60MHz、450 〜500MHz、75 0 〜820MHz 及 960 〜990MHz 的區域之傳達性優異。 比較例1 除了在銅箔上沒有鎳層以外，與實施例1同樣地，形 成導電膜。將此導電膜裁切，作成5mm的寬度，以PI薄 膜成爲支持體側的方式，平行地黏著於氯乙烯樹脂製支持 體以外，係與實施例1同樣地製作高頻傳送線路。對此高 頻傳送線路，與實施例1同樣地作，調查高頻傳達率（％) 。結果示於第23圖中。由於此導電膜沒有漸變組成層， 故沒有發現高頻傳達率爲0%的區域。 比較例2 於與實施例1同樣地製作漸變接合式導電膜後，從鎳 層側以5〇0°C加熱，使漸變組成層消失。使用所得到的金 屬薄膜（鎳/銅），以鎳層成爲支持體側的方式，平行地黏著 於氯乙烯樹脂製支持體以外，係與實施例1同樣地製作高 頻傳送線路。對此高頻傳送線路，與實施例1同樣地調查 高頻傳達率（％)。結果示於第24圖中。由於此導電膜沒有 漸變組成層，故沒有發現高頻傳達率爲0%的區域。 比較例3 於上述PET薄膜的一面，蒸鍍厚度爲5,000A的鐵10 原子％與銅90原子％之合金。將所得到的導電膜裁切，作 成5mm的寬度，以PET薄膜成爲支持體側的方式，平行 地黏著於氯乙烯樹脂製支持體以外，係與實施例1同樣地 製作高頻傳送線路。對此高頻傳送線路，與實施例1同樣 -29- 200820485The area of V 1,050 MHz is excellent in communication. Among them, in the signal pattern 2, the high-frequency transmission rate is 100% or more in the regions of 260 to 3 80 MHz and 970 to 1,050 MHz. Example 3 In the same manner as in Example 2, a steel layer having a thickness of 0·3 μm and a nickel layer having a thickness of 40 nm were formed on one surface of the PET film. The obtained tapered bonded conductive film is passed through a first roll (the electrodeposited synthetic diamond fine particles having a particle diameter of 5 to 3 0 μπι) and a metal first in a manner that the metal film is on the first roll side. Between the two rolls. The obtained porous tapered junction type conductive film was formed only in the nickel layer and the copper layer, and the average opening diameter of the fine pores was 3 μm, and the average distribution density of the fine pores was 5 x 10 4 pieces/cm 2 . The porous graded junction type conductive film was cut to have a width of 5 m, and the parallel line type high frequency transmission line was produced in the same manner as in the first embodiment. In the high-frequency transmission line -27-200820485, the high-frequency transmission rate (%) was investigated in the same manner as in the second embodiment. The result is shown in Fig. 21. As can be seen from Fig. 21, for the signal pattern 2, the region of 680 to 740 MHz is substantially removed. For the signal patterns 1 and 2, the areas of 2 6 0 to 4 0 0 Μ Η z and 7 8 0 to 8 6 0 Μ Η 优异 are excellent in communication. In the signal pattern 2, in the region of 260 to 400 MHz, 760 to 840 MHz, and 990 to 1,050 "1^, the high frequency transmission rate is 1 〇〇 /. or more. Embodiment 4 On one side of the PET film, A nickel layer having a thickness of 5 nm was formed by a vapor deposition method to form a copper layer having a thickness of 0.45 μm. In the obtained graded junction type conductive film, fine pores were formed in the same manner as in Example 3. The obtained porous gradient was obtained. The bonded conductive film-based fine pores are formed only in the copper layer and the nickel layer, and the average opening diameter of the fine pores is 3 μm, and the density of the fine pores is 5×104/cm2. The porous tapered bonded conductive film is cut into In the same manner as in the first embodiment, a parallel line is produced in the same manner as in the first embodiment, except that the two strip-shaped porous tapered bonded conductive films are adhered to the support of the vinyl chloride resin in parallel so that the PET film is on the support side. High-frequency transmission line (length i: 50 cm, interval d2: 3 mm of two strip-shaped tapered bonding type conductive films). The high-frequency transmission line was measured in the same manner as in the first embodiment, and the high-frequency transmission rate (%) was investigated. The results are shown in Figure 22. From Figure 22. It can be seen that in the signal pattern 1, the region of 480 to 530 MHz is substantially removed, and in the signal pattern 2, the region of 650 to 700 MHz is substantially removed. For the signal pattern 1, 130 to 160 MHz, 2 60~30 0 MHz, 380~400MHz, 650~720MHz and 920~l, the area of OOOMHz is excellent. For signal pattern 2, 130~180MHz, 260~-28-200820485 3 60MHz, 450~500MHz In the region of 75 0 to 820 MHz and 960 to 990 MHz, the communication property was excellent. Comparative Example 1 A conductive film was formed in the same manner as in Example 1 except that the nickel layer was not provided on the copper foil. The conductive film was cut to make 5 mm. In the same manner as in the first embodiment, a high-frequency transmission line was produced in the same manner as in the first embodiment, except that the PI film was placed on the support side and adhered in parallel to the vinyl chloride resin support. The high-frequency transmission rate (%) was investigated. The results are shown in Fig. 23. Since the conductive film did not have a gradation composition layer, a region having a high-frequency transmission rate of 0% was not found. Comparative Example 2 is the same as in the first embodiment. Gradient joint After the conductive film was heated from the side of the nickel layer at 5 〇 0 ° C, the gradation composition layer disappeared. The obtained metal thin film (nickel/copper) was adhered to the chlorine in parallel so that the nickel layer became the support side. A high-frequency transmission line was produced in the same manner as in Example 1 except for the vinyl-based support. The high-frequency transmission line was examined for the high-frequency transmission rate (%) in the same manner as in Example 1. The results are shown in Fig. 24. Since this conductive film did not have a graded layer, no region having a high frequency transmission rate of 0% was found. Comparative Example 3 On one surface of the above PET film, an alloy of 10 atom% of iron having a thickness of 5,000 A and 90 atom% of copper was deposited. The obtained conductive film was cut to have a width of 5 mm, and a high-frequency transmission line was produced in the same manner as in Example 1 except that the PET film was placed on the side of the support and adhered in parallel to the support made of a vinyl chloride resin. The high-frequency transmission line is the same as that of the first embodiment -29- 200820485
地作，調查高頻傳達率（％) 導電膜沒有漸變組成層’ ® 路比較下，全體的高頻傳達 【圖式簡單說明】 第1(a)圖係本發明一實 面圖。 第1(b)圖係第1(a)圖的 第1(c)圖係第1(b)圖的 第1(d)圖係第1(b)圖的 第2(a)圖係本發明的另 之截面圖。 第2(b)圖係第2(a)圖的 第2(c)圖係第2(b)圖的 第2(d)圖係第2(b)圖的 第3 (a)圖係本發明的5 膜之截面圖。 第3(b)圖係第3(a)圖的 第4(a)圖係本發明的拜 膜之截面圖。 第4(b)圖係第4(a)圖的 第5 (a)圖係本發明的异 膜之截面圖。 第5(b)圖係第5(a)圖的 第6圖係本發明的再^ 。結果示於第25圖中。由於此 〔與實施例1〜4的高頻傳送線 率係差的。 :施例的漸變接合式導電膜之截 A部分之擴大截面圖。 A ’部分之示意擴大截面圖。 A ”部分之示意擴大截面圖。 丨一實施例的漸變接合式導電膜 B部分之擴大截面圖。 B ’部分之示意擴大截面圖。 B”部分之示意擴大截面圖。 〔另一實施例的漸變接合式導電 C部分之示意擴大截面圖。 ί另一實施例的漸變接合式導電 D部分之示意擴大截面圖。 ί另一實施例的漸變接合式導電 Ε部分之示意擴大截面圖。 Β —實施例的漸變接合式導電膜 -30- 200820485 之斜視圖。 第7圖係本發明的再另一實施例的漸變接合式導電膜 之斜視圖。 第8圖係本發明的再另一實施例的漸變接合式導電膜 之斜視圖。 第9圖係本發明的一實施例的高頻傳送線路之斜視圖 〇 第10圖係本發明的另一實施例的高頻傳送線路之斜視 •圖。 第11圖係本發明的又另一實施例的高頻傳送線路之斜 .視圖。 第1 2圖係本發明的再另一實施例的高頻傳送線路之斜 視圖。 第1 3圖係本發明的再另一實施例的高頻傳送線路之斜 視圖。 第1 4圖係本發明的一實施例的高頻濾波器之示意斜視 •圖。 第15圖係振盪器及受信器連接於高頻傳送線路狀態之 示意圖。 第1 6圖係高頻傳達率之測定時所使用的振盪器之構造 的示意電路圖。 第17圖顯示來自振盪器的信號圖案，（a)爲信號從（+ ) 側輸出傳送時的示意圖，（b)爲信號從（一）側輸出傳送時的 示意圖。 -31- 200820485 第1 8圖係就實施例1的高頻傳送線路而言，顯示頻率 與高頻傳達率的關係之曲線圖。 第1 9圖係顯示對實施例2的高頻傳送線路之接線構造 的部分截面圖。 第20圖係就實施例2的高頻傳送線路而言，顯示頻率 與高頻傳達率的關係之曲線圖。 第21圖係就實施例3的高頻傳送線路而言，顯示頻率 與高頻傳達率的關係之曲線圖。 ® 第22圖係就實施例4的高頻傳送線路而言，顯示頻率 與高頻傳達率的關係之曲線圖。 第2 3圖係就比較例1的高頻傳送線路而言，顯示頰率 與高頻傳達率的關係之曲線圖。 第24圖係就比較例2的高頻傳送線路而言，顯示頻率 與高頻傳達率的關係之曲線圖。 第2 5圖係就比較例3的高頻傳送線路而言，顯示頻率 與高頻傳達率的關係之曲線圖。 ® 第26圖係顯示以往的高頻傳送線路之例子的斜視圖。 第27圖係顯示以往的高頻傳送線路之另一例子的斜視 圖。 第28圖係顯示以往的高頻傳送線路之又另一例子的斜 視圖。 第29圖係顯示以往的高頻傳送線路之再另一例子的斜 視圖。 第3 0圖係顯示以往的高頻傳送線路之再另一例子的斜 -32- 200820485 視圖。 第31圖係顯示以往的高頻傳送線路之再另一例子的斜 視圖。 【主要元件符號說明】In the ground, the high-frequency transmission rate (%) is investigated. The conductive film has no gradient layer. The high-frequency transmission of the whole is performed. [Comparative description of the drawing] Figure 1(a) is a solid view of the present invention. Fig. 1(b) is the first (c) of Fig. 1(a), the first (d) of Fig. 1(b) is the second (a) of Fig. 1(b) Another cross-sectional view of the invention. 2(b) is the 2nd (c) diagram of the 2nd (a) diagram, the 2nd (d) diagram of the 2nd (b) diagram is the 3rd (a) diagram of the 2nd (b) diagram A cross-sectional view of a 5 film of the invention. Fig. 3(b) is a cross-sectional view of the film of the present invention in the fourth (a) diagram of Fig. 3(a). Fig. 4(b) is a cross-sectional view of the film of the present invention in the fifth (a) diagram of Fig. 4(a). Fig. 5(b) is a diagram of Fig. 5(a) and Fig. 6 is a further illustration of the present invention. The results are shown in Figure 25. This is inferior to the high frequency transmission line rates of Examples 1 to 4. : An enlarged cross-sectional view of a section A of the tapered junction type conductive film of the embodiment. A schematic enlarged cross-sectional view of the A' portion. A schematic enlarged cross-sectional view of a portion of the A" section. An enlarged cross-sectional view of the portion B of the tapered bonded conductive film of the embodiment. A schematic enlarged cross-sectional view of the portion B'. [A schematic enlarged cross-sectional view of a tapered junction type conductive C portion of another embodiment. BRIEF DESCRIPTION OF THE DRAWINGS A schematic enlarged cross-sectional view of a tapered bonded conductive D portion of another embodiment. BRIEF DESCRIPTION OF THE DRAWINGS A schematic enlarged cross-sectional view of a tapered junction type conductive crucible portion of another embodiment. Β—An oblique view of the tapered bonded conductive film of the embodiment -30- 200820485. Fig. 7 is a perspective view showing a tapered junction type conductive film according to still another embodiment of the present invention. Fig. 8 is a perspective view showing a tapered junction type conductive film according to still another embodiment of the present invention. Fig. 9 is a perspective view showing a high frequency transmission line according to an embodiment of the present invention. Fig. 10 is a perspective view of a high frequency transmission line according to another embodiment of the present invention. Figure 11 is a perspective view of a high frequency transmission line of still another embodiment of the present invention. Fig. 12 is a perspective view showing a high frequency transmission line of still another embodiment of the present invention. Fig. 13 is a perspective view showing a high frequency transmission line of still another embodiment of the present invention. Fig. 14 is a schematic oblique view of a high frequency filter according to an embodiment of the present invention. Figure 15 is a schematic diagram showing the state in which the oscillator and the receiver are connected to the high frequency transmission line. Fig. 16 is a schematic circuit diagram showing the structure of an oscillator used in the measurement of the high frequency transmission rate. Figure 17 shows the signal pattern from the oscillator, (a) is a schematic diagram of the signal output from the (+) side, and (b) is a schematic diagram of the signal output from the (one) side. -31- 200820485 Fig. 18 is a graph showing the relationship between the display frequency and the high-frequency transmission rate in the high-frequency transmission line of the first embodiment. Fig. 19 is a partial cross-sectional view showing the wiring structure of the high-frequency transmission line of the second embodiment. Fig. 20 is a graph showing the relationship between the display frequency and the high-frequency transmission rate in the high-frequency transmission line of the second embodiment. Fig. 21 is a graph showing the relationship between the display frequency and the high-frequency transmission rate in the high-frequency transmission line of the third embodiment. Fig. 22 is a graph showing the relationship between the display frequency and the high-frequency transmission rate with respect to the high-frequency transmission line of the fourth embodiment. Fig. 2 is a graph showing the relationship between the buccal rate and the high-frequency transmission rate in the high-frequency transmission line of Comparative Example 1. Fig. 24 is a graph showing the relationship between the display frequency and the high-frequency transmission rate in the high-frequency transmission line of Comparative Example 2. Fig. 25 is a graph showing the relationship between the display frequency and the high-frequency transmission rate in the high-frequency transmission line of Comparative Example 3. ® Figure 26 is a perspective view showing an example of a conventional high-frequency transmission line. Fig. 27 is a perspective view showing another example of the conventional high-frequency transmission line. Fig. 28 is a perspective view showing still another example of the conventional high-frequency transmission line. Fig. 29 is a perspective view showing still another example of the conventional high-frequency transmission line. Fig. 30 shows an oblique -32-200820485 view of another example of the conventional high-frequency transmission line. Fig. 31 is a perspective view showing still another example of the conventional high-frequency transmission line. [Main component symbol description]
1 漸變接合式導電膜 2 介電基板 3 黏著層 4 端子 5 高頻振盪器 6 受信器 7 鱷口夾 8 絕緣體 10 塑膠薄膜 11a 第一金屬薄膜 11a5 第一金屬原子 1 lb 第二金屬薄膜 lib’ 第二金屬原子 12 、 125 漸變組成層 13 黏著層 14 微細孔 20 凸部 50 輸出端子 70 電纜 100 內導體 •33- 2008204851 Gradient bonded conductive film 2 Dielectric substrate 3 Adhesive layer 4 Terminal 5 High frequency oscillator 6 Receptor 7 Crocodile clip 8 Insulator 10 Plastic film 11a First metal film 11a5 First metal atom 1 lb Second metal film lib' Second metal atom 12, 125 Gradient composition layer 13 Adhesive layer 14 Micro-hole 20 Projection 50 Output terminal 70 Cable 100 Inner conductor•33- 200820485
10 0’ 外導體 110 帶狀導體線路 120 接地導體 2 0 0 介電基板 210 介電基板 -34-10 0' outer conductor 110 strip conductor line 120 ground conductor 2 0 0 dielectric substrate 210 dielectric substrate -34-