JP4803838B2 - Band-shaped high-frequency transmission line and parallel-type high-frequency transmission line - Google Patents

Description

  The present invention relates to a belt-like high-frequency transmission line that can turn on / off transmission of a high-frequency signal according to an applied voltage, and a parallel-type high-frequency transmission line using the same.

  Conventionally, coaxial cables, metal waveguides, and the like have been used as high-frequency transmission lines. However, even though these can transmit high-frequency signals without noise, they cannot control transmission by voltage. In addition, as a high-frequency transmission line in which a strip conductor is provided on one surface of a ceramic dielectric substrate, Japanese Patent Application Laid-Open No. 7-336113 discloses a high-frequency transmission in which a pair of strip conductors 110 and 110 are provided in parallel on one surface of a ceramic dielectric substrate 400. A line (FIG. 20) and a high-frequency transmission line (FIG. 21) in which a strip conductor 110 and ground conductors 120, 120 on both sides thereof are provided on one surface of a ceramic dielectric substrate 400 are disclosed. However, these high-frequency transmission lines cannot control voltage transmission. As described above, there is no conventional high-frequency transmission line capable of voltage control. However, such a high-frequency transmission line is considered to be effective for various uses such as a switching element.

JP-A-7-336113

  Accordingly, an object of the present invention is to provide a strip-shaped high-frequency transmission line capable of voltage control and a parallel-type high-frequency transmission line using the same.

  As a result of diligent research in view of the above object, the present inventor can control the voltage when a large number of linear traces in the width direction are formed on the two-layered metal thin film provided on one surface of the belt-shaped plastic film. The inventors have found that a band-like high-frequency transmission line can be obtained, and have arrived at the present invention.

That is, the band-shaped high-frequency transmission line of the present invention has linear traces on the entire surface by sliding a roll having fine particles of high hardness on the first and second metal thin films formed in order on one surface of the plastic film. After forming, the linear traces are slit so as to extend in the width direction, the width distribution of the linear traces is 0.1 to 50 μm, and the average distribution density of the linear traces is 1,000 to 5,000. / Cm width, at least a part of the linear trace penetrates the first and second metal thin films, and the first and second metal thin films are at least partially separated in the longitudinal direction. It is characterized by that.

  In a preferred example of the strip-shaped high-frequency transmission line, the first metal is copper and the second metal is nickel. In another preferred example of the strip-shaped high-frequency transmission line, the first metal is nickel and the second metal is copper.

In still another preferred example of the belt-like high-frequency transmission line, the first and second metal thin films are vapor deposition layers.

  A plastic layer is preferably provided on the second metal thin film.

  The parallel-type high-frequency transmission line of the present invention is characterized by comprising two above-described band-shaped high-frequency transmission lines in parallel. The two strip-shaped high-frequency transmission lines are preferably arranged on the same surface of the dielectric substrate.

  Since the strip-shaped high-frequency transmission line of the present invention can be voltage-controlled, it is useful for various high-frequency components. For example, when used in a transmission cable, it is possible to efficiently transmit a desired frequency band by controlling the applied voltage and cut other frequency bands.

[1] Band-shaped high-frequency transmission line FIGS. 1A to 1D show examples of the band-shaped high-frequency transmission line of the present invention. In this belt-like high-frequency transmission line, first and second metal thin films 11a and 11b are formed on one surface of a plastic film 10, and a number of lines in the width direction are substantially formed on the second metal thin film 11b side. A trace 14 is formed on the entire surface.

(1) Plastic film The resin forming the plastic film 10 is not particularly limited as long as it has insulating properties, deformability, and processability. For example, polyester, polyarylene sulfide (polyphenylene sulfide, etc.), polyamide, polyimide, polyamideimide, poly Examples include ether sulfone, polyether ether ketone, polycarbonate, acrylic resin, polystyrene, ABS resin, polyurethane, fluororesin, polyolefin (polyethylene, polypropylene, etc.), polyvinyl chloride, and thermoplastic elastomer. Among them, high heat resistant resins such as polyester, polyarylene sulfide, polyamide, polyimide, polyamideimide, polyethersulfone and polyetheretherketone are preferable, and polyester, polyphenylene sulfide and polyimide are particularly preferable. Examples of the polyester include polyethylene terephthalate (PET), polybutylene terephthalate (PBT), polyethylene naphthalate, and polybutylene naphthalate. Among these, PET and PBT are preferable because they are commercially available as films at low cost.

(2) Metal thin film It is preferable that the first and second metal thin films 11a and 11b have different electric resistances. The difference in electrical resistance between the first and second metal thin films 11a and 11b is preferably 2 × 10 ⁻⁶ Ω · cm or more at room temperature, and more preferably 4 × 10 ⁻⁶ Ω · cm or more. .

As the first and second metals, copper [resistivity (20 ° C.): 1.6730 × 10 ⁻⁶ Ω · cm], aluminum [resistivity (20 ° C.): 2.6548 × 10 ⁻⁶ Ω · cm], silver [resistance Rate (20 ° C): 1.59 × 10 ^-6 Ω · cm], Gold [Resistivity (20 ° C): 2.35 × 10 ^-6 Ω · cm], Platinum [Resistivity (20 ° C): 10.6 × 10 ^-6 Ω・ Cm], nickel [resistivity (20 ° C): 6.84 × 10 ^-6 Ω · cm], cobalt [resistivity (20 ° C): 6.24 × 10 ^-6 Ω · cm], palladium [resistivity (20 ° C) : 10.8 × 10 ⁻⁶ Ω · cm], tin [resistivity (0 ° C.): 11.0 × 10 ⁻⁶ Ω · cm], and alloys thereof.

  The first and second metals are selected from the above so as to have different electric resistances. Preferred combinations of the first metal / second metal are copper / nickel and nickel / copper.

  Regardless of the electric resistance of the first metal and the second metal, the thickness ratio of the metal thin film having the smaller electric resistance and the metal thin film having the larger electric resistance is 2/1 to 20 / 1 is preferable. In particular, when both metal thin films are vapor-deposited films, this ratio is preferably 3/1 to 15/1. Specifically, the thickness of the metal thin film having the smaller electric resistance is preferably 0.1 to 35 μm, more preferably 0.1 to 1 μm, and most preferably 0.2 to 0.7 μm. Further, the thickness of the metal thin film having the larger electric resistance is preferably 10 nm to 20 μm, more preferably 10 to 70 nm, and most preferably 20 to 60 nm.

  The first metal thin film 11a is preferably formed by vapor deposition or foil. The second metal thin film 11b is formed by vapor deposition of at least a layer bonded to the first metal thin film 11a. Therefore, the second metal thin film 11b may be a deposited film or a deposited film + plated layer.

(3) Gradient composition layer As shown in FIG. 1 (d), between the first metal thin film 11a and the second metal thin film 11b, the second metal atoms 11b ′ are converted into the first metal atoms 11a. It is preferable that a so-called gradient composition layer 12 is formed by partially entering between the two. In the gradient composition layer 12, the composition ratio (concentration) of the second metal atoms 11b ′ gradually decreases from the second metal thin film 11b to the first metal thin film 11a. For this reason, it is estimated that the gradient composition layer 12 is amorphous.

(4) Linear Traces In order to obtain excellent voltage controllability, a large number of substantially linear traces 14 in the width direction are formed on the entire surface of the second metal thin film 11b. As will be described later, the linear trace 14 is generated by plastic deformation of the second metal thin film 11b by the high-hardness fine particles provided on the roll. Since the distribution of the high hardness fine particles on the roll is random, the arrangement of the linear marks 14 is also random. Since the second metal thin film 11b is thin, as shown in FIG. 1C, the first metal thin film 11a is also plastically deformed by the formation of the linear marks 14, and both the metals 11a 'and 11b' are partially deformed. It is thought to be mixed.

  In order to have a selective transmission property with respect to a high-frequency signal at a voltage equal to or higher than a threshold value, at least a part of the linear scar 14 penetrates the first and second metal thin films 11a and 11b, and thus the first and second The metal thin films 11a and 11b are preferably at least partially separated in the longitudinal direction. Therefore, it is preferable that the linear mark 14 extends over the entire range in the width direction of the belt-shaped high-frequency transmission line 1 and at least a part of the linear mark 14 penetrates the first metal thin film 11a. The band-shaped high-frequency transmission line 1 is manufactured by forming a linear mark 14 on a composite film in which first and second metal thin films 11a and 11b are provided on a plastic film 10 and then slitting as described later. Therefore, it is preferable to form a linear scar 14 having a length corresponding to the desired width of the strip-shaped high-frequency transmission line 1 on the composite film and to slit the linear scar 14 so as to extend over the entire range in the width direction. .

  The depth of the linear mark 14 is determined by the height of the high-hardness fine particles provided on the roll surface. Further, the distribution of the width of the linear mark 14 determined by the outer diameter of the high hardness fine particles is preferably 0.1 to 50 μm, and more preferably 0.3 to 20 μm. Further, the average distribution density of the linear marks 14 is preferably 1,000 to 5,000 / cm width. If the average distribution density of the linear marks 14 is less than 1,000 lines / cm width, the effect of improving the voltage controllability is not sufficient. On the other hand, even if the width exceeds 5,000 / cm, further improvement in voltage controllability cannot be obtained. The depth, width, and average distribution density of the line marks 14 can be obtained by observing an optical micrograph of the band-shaped high-frequency transmission line 1.

(5) Plastic Layer As shown in FIG. 2, it is preferable that a plastic layer 10 ′ is formed on the second metal thin film 11b so as to cover the linear marks 14. The plastic layer 10 ′ can be formed by adhering the second plastic film to the second metal thin film 11b by a thermal laminating method or the like. The thickness of the plastic layer is preferably 10 to 100 μm.

[2] Manufacturing method of band-shaped high-frequency transmission line The band-shaped high-frequency transmission line 1 is formed by forming a first metal thin film 11a on one surface of a plastic film 10 by a vapor deposition method, a plating method, or a foil bonding method, The second metal thin film 11b is formed by the method and the plating method, and the second metal thin film 11b side of the obtained composite film is brought into sliding contact with a roll having a large number of high-hardness fine particles on the surface. It is manufactured by forming substantially parallel linear marks 14 and slitting.

(1) Formation of metal thin film Metal vapor deposition is performed by, for example, physical vapor deposition such as vacuum vapor deposition, sputtering, or ion plating, chemical vapor deposition such as plasma CVD, thermal CVD, or photo CVD. It can be carried out.

(2) Formation of linear traces The linear traces 14 can be formed, for example, by the method described in WO2003 / 091003. As shown in FIG. 3 (a) and FIG. 3 (b), a roll 2 having a large number of high hardness (for example, Mohs hardness of 5 or more) particles having sharp corners attached to the surface is provided on the roll 2. The second metal thin film 11b side of the composite film 1 '' is preferably brought into sliding contact. The roll 2 is preferably rotated in the direction opposite to the traveling direction of the composite film 1 ''. It is preferable to apply tension to the composite film 1 ″ by nip rolls 3 and 3 provided before and after the roll 2. As shown in FIG. 3 (b), while the fine particles of the roll 2 are in contact with the roll sliding contact surface of the composite film 1 '', a linear mark having a length L is formed. In this way, as shown in FIG. 3C, a large number of substantially parallel linear marks 14 are formed in a random arrangement. The linear traces 14 are preferably provided uniformly on the entire surface of the composite film 1 ''. The length L of the linear mark 14 is appropriately set according to the desired width of the band-shaped high-frequency transmission line.

  By forming the linear trace 14 as described above, the first and second metal thin films 11a and 11b are separated into a large number of conductors substantially insulated by the linear trace 14, and excellent voltage controllability is obtained. . Although not limited, the traveling speed of the composite film 1 ″ is preferably 5 to 200 m / min, the peripheral speed of the roll 2 is preferably 10 to 300 m / min, and the tension applied to the composite film 1 ″ is 0.05. A width of ˜5 kgf / cm is preferred.

(3) Formation of Plastic Layer As shown in FIG. 2, when the plastic layer 10 ′ is formed on the second metal thin film 11b, after forming the linear marks 14 on the composite film 1 ″, The second plastic film may be bonded to the second metal thin film 11b by a heat laminating method or the like.

(4) Slit process The strip-shaped high-frequency transmission line 1 is obtained by slitting the conductive film 1 ′ provided with the linear traces 14 and forming the plastic layer 10 ′ as necessary by a known method. What is necessary is just to slit electroconductive film 1 'so that the linear trace 14 may extend in the whole range of the width direction.

[3] Parallel type high frequency transmission line FIG. 4 shows an example of the parallel type high frequency transmission line of the present invention. In this parallel type high-frequency transmission line, two strip-shaped high-frequency transmission lines 1 and 1 are arranged in parallel on the upper surface of a dielectric substrate 4 made of plastic, insulating ceramics or the like. Since the electric field concentrates between the two strip-shaped high-frequency transmission lines 1 and 1, a high-frequency signal can be transmitted efficiently. In order to obtain an excellent high frequency transmission property, the dielectric substrate 4 preferably has a convex portion 40 between the two strip-shaped high frequency transmission lines 1 and 1.

The width d 1 of each high-frequency transmission line 1, ₁ is appropriately set according to the frequency and amplitude of the high-frequency signal, but is preferably 1 to 10 mm, and more preferably 1 to 7 mm. If the width d ₁ is 1mm or more, with sufficient frequency signal transmission property. Further, even if the width d ₁ is greater than 10 mm, further improvement in high-frequency signal transmission is not obtained.

The distance d ₂ between the _two strip-shaped high-frequency transmission lines 1 and 1 is preferably 1 to 10 mm, and more preferably 1.5 to 7 mm. Distance d ₂ is that it is less than 1mm is insufficient high frequency signal transmission property, whereas the radiation loss is large but 10 mm greater. The height h of the convex portion 40 is preferably 1 to 10 mm, and more preferably 1.5 to 7 mm.

  The band-shaped high-frequency transmission lines 1 and 1 are not limited to be disposed on the same surface of the dielectric substrate, but are formed on the opposing inner surface of the U-shaped dielectric substrate or on the L-shaped dielectric substrate. It may be arranged on the orthogonal inner surface.

  The parallel-type high-frequency transmission line of the present invention can selectively transmit a high-frequency signal at a voltage equal to or higher than a threshold regardless of the frequency band. Specifically, the parallel type high-frequency transmission line is adapted to a high-frequency signal with an applied voltage of 1 V or less when the laminate composed of the first and second metal thin films 11a and 11b is a combination of a copper vapor deposition film and a nickel vapor deposition film. Can only obtain a transmission rate of 0 to several percent and has substantially no transmission property, but a practical transmission rate of more than 30% can be obtained for a high-frequency signal with an applied voltage of 1.2V. In this case, the threshold value of the applied voltage is between 1 and 1.2V.

  The reason why the parallel high-frequency transmission line of the present invention has excellent voltage controllability is presumed to be because it has a configuration similar to that in which many capacitors are connected in series.

  Parallel-type high-frequency transmission lines with the above characteristics transmit only signals with voltages above the threshold, and transmission cables and switching elements that have an ON-OFF function to cut signals at other voltages, voltages above the threshold This is useful as a high-frequency component such as a high-frequency antenna that transmits only the signal in FIG.

  The present invention will be described in more detail with reference to the following examples, but the present invention is not limited thereto.

Example 1
(1) Fabrication of band-shaped high-frequency transmission line
(a) Preparation of composite film Biaxially stretched PET film [thickness: 16 μm, dielectric constant: 3.2 (1 MHz), dielectric loss tangent: 1.0% (1 MHz), melting point: 265 ° C, glass transition temperature: 75 ° C] On one surface, a copper layer having a thickness of 0.6 μm was formed by a vacuum deposition method, and a nickel layer having a thickness of 0.05 μm was formed thereon by a vacuum deposition method to produce a composite film.

(b) Formation of linear traces Using the apparatus shown in FIG. 3, a composite film 1 ″ with a nickel layer on the roll 2 side is applied to a roll 2 on which diamond fine particles having a particle size distribution of 50 to 80 μm are electrodeposited. Slid in contact. The traveling speed of the composite film 1 ″ was 10 m / min, the peripheral speed of the roll 2 was 20 m / min, and the tension applied to the composite film 1 ″ was 0.1 kgf / cm width. The resulting conductive film had a depth distribution of linear traces of 0.8 to 1.5 μm, a linear trace width distribution of 0.5 to 5 μm, and an average distribution density of 4,000 lines / cm width. A PET film having a thickness of 100 μm was adhered to both surfaces of the conductive film by a thermal laminating method, and then cut into 20 cm × 5 mm to obtain a strip-shaped high-frequency transmission line.

(2) Production of parallel line type high-frequency transmission line Two parallel high-frequency transmission lines are bonded in parallel to a vinyl chloride resin substrate so that the copper layer is on the substrate side, and the parallel line type high-frequency transmission shown in FIG. A line was prepared (length: 20 cm, distance d ₂ between _two strip-shaped high-frequency transmission lines: 3 mm).

Example 2
A parallel-line type high-frequency transmission line was produced in the same manner as in Example 1 except that the length of the band-shaped high-frequency transmission line was 10 cm (length: 10 cm, distance d ₂ between the _two band-shaped high-frequency transmission lines: 3 mm).

Example 3
A parallel-line type high-frequency transmission line was manufactured in the same manner as in Example 1 except that the width of the band-shaped high-frequency transmission line was changed to 2 mm (length: 20 cm, distance d ₂ between the _two band-shaped high-frequency transmission lines: 3 mm). .

Example 4
A parallel-line type high-frequency transmission line was produced in the same manner as in Example 1 except that the size of the band-shaped high-frequency transmission line was set to 2 cm × 1 mm (length: 2 cm, distance d ₂ between the _two band-shaped high-frequency transmission lines: 3 mm) ).

Example 5
A nickel layer having a thickness of 0.02 μm was formed on one surface of the biaxially stretched PET film by a vacuum deposition method, and a copper layer having a thickness of 0.3 μm was formed thereon by a vacuum deposition method. Linear traces were formed on the copper layer side of the obtained composite film in the same manner as described above. The resulting conductive film had a depth distribution of linear traces of 0.8 to 1.5 μm, a linear trace width distribution of 0.5 to 5 μm, and an average distribution density of 4,000 lines / cm width. The conductive film was cut into 10 cm × 5 mm to obtain a strip-shaped high-frequency transmission line. Two strip-shaped high-frequency transmission lines were bonded in parallel to the substrate so that the PET film was on the substrate side to produce a parallel-line high-frequency transmission line (length: 10 cm, two strip-shaped high-frequency transmission lines Distance d ₂ : 3 mm).

  The voltage controllability of the parallel line type high-frequency transmission lines obtained in Examples 1 to 5 was evaluated by the following method.

(a) Measuring spurious characteristics of high-frequency oscillators
(i) Production of high-frequency transmission line for measuring spurious characteristics A copper layer having a thickness of 0.3 μm was formed on one surface of a biaxially stretched PET film by a vacuum deposition method, and slit to a width of 5 mm. Two strips of copper / PET film with a length of 50 cm were bonded in parallel to a vinyl chloride resin substrate with a distance of d ₂ of 3 mm with the PET film facing down. A high-frequency transmission line for measuring spurious characteristics was fabricated.

(ii) Spurious characteristic measurement As shown in FIG. 5, a high frequency oscillator 5 is connected to one end of a copper / PET film 100, 100 of a high frequency transmission line for spurious characteristic measurement via a cable 70 and a hook clip 7. A high-frequency receiver 6 was connected to. In order to match the impedance and accurately measure the high-frequency transmission rate, the matching unit 8 is provided immediately after the high-frequency oscillator 5 and immediately before the receiver 6. As shown in FIG. 6, the high-frequency oscillator 5 includes a voltage-controlled oscillator (VCO) 51 and three high-frequency oscillation modules 52, 52 ′, 52 ″ and 2 which are switched according to the frequency of a signal to be transmitted. A plurality of high-frequency amplifiers 53 and 53 ′ are provided. The high frequency oscillator 5 can transmit signals in the range of 100 to 200 MHz, 260 to 550 MHz, and 600 to 1,050 MHz. Signals of 100, 200, 300, 500, 700 and 1,000 MHz were transmitted from the oscillator 5, and the spurious characteristics were examined. The results are shown in Table 1. The high-frequency oscillator 5 generated less harmonics and had no spurious other than the harmonics.

(b) Evaluation of voltage controllability Voltage controllability was evaluated by measuring the high-frequency transmission rate under the following conditions.
(i) When the applied voltage is fixed at 1.0 V The oscillator 5 and the receiver 6 are connected by the cable 70 (see FIG. 5), and the applied voltage of 1.0 V (the voltage output from the oscillator 5 and input to the high-frequency transmission line) The signal was transmitted from the oscillator 5 while increasing the frequency at intervals of 2 to 6 MHz from 120 MHz to 1,050 MHz. As shown in FIG. 7 (a), when the signal is transmitted from the output terminals 50, 50 of the oscillator 5 so as to be output from the (+) side (signal pattern 1), as shown in FIG. 7 (b), Input amplitude when both signals are transmitted from the output terminals 50 and 50 of the oscillator 5 so as to be output from the (−) side (signal pattern 2: phase shifted by 1/2 wavelength with respect to signal pattern 1). (Voltage amplitude output from the high-frequency transmission line and input to the receiver, hereinafter referred to as “input amplitude”) was obtained. According to the formula: transmission coefficient = input amplitude (V) / output amplitude (V), the transmission coefficient at each frequency was obtained, and a frequency-transmission coefficient curve was created for each of the signal patterns 1 and 2.

  The oscillator 5 and the receiver 6 are connected to the parallel line type high-frequency transmission line manufactured in the first to fifth embodiments in the same manner as described above, and the matching unit 8 is provided immediately after the oscillator 5 and immediately before the receiver 6 (see FIG. 5, for the parallel line type high-frequency transmission lines of Examples 1 to 4, the PET films on both ends of the strip-shaped high-frequency transmission lines 1 and 1 were peeled off, and the mouth clip 7 was attached to the nickel layer). The signal (signal patterns 1 and 2) is transmitted from the oscillator 5 while increasing the frequency from 120 MHz to 1,050 MHz at intervals of 2 to 6 MHz with an output amplitude (V) of 1.0 V, and the signal input to the receiver 6 The amplitude (input amplitude (V)) was obtained. Using the transmission coefficient obtained from the above frequency-transmission coefficient curve, at the output amplitude (V) of 1.0 V, the high-frequency transmission rate (%) at each measurement frequency is expressed by the formula: high-frequency transmission rate (%) = input amplitude (V) / (Output amplitude (V) × transmission coefficient) × 100. 8 to 17 show the results of plotting the relationship between the frequency and the high-frequency transmission rate (shown in FIGS. 8, 10, 12, 14, and 16 for signal pattern 1 and FIGS. 9, 11, 13, 15, and 17 for signal pattern 2). To show).

(ii) When the applied voltage is 1.2 V at 686 MHz For signal pattern 1, the output amplitude gradually changes from 630 MHz to 770 MHz so that the output amplitude is 1.2 V at 686 MHz as shown in Fig. 18 Except for the above, the transmission coefficient was obtained in the same manner as described above, and the high-frequency transmission rate (%) was obtained. The results of plotting the relationship between frequency and high-frequency transmission rate are shown in FIGS.

(iii) When the applied voltage is set to 1.2 V at 941 MHz For signal pattern 2, as shown in Fig. 19, the output amplitude is abruptly changed so that the output amplitude is 1.2 V at 941 MHz. Similarly, the transmission coefficient was obtained, and the high frequency transmission rate (%) was obtained. The results of plotting the relationship between the frequency and the high frequency transmission rate are shown in FIGS.

  As apparent from FIGS. 8 to 17, in any of Examples 1 to 5, the high frequency transmission line rate is 0 to several% at an applied voltage of 1.0 V, and the transmission voltage is not substantially transmitted. With V, a practical transmission rate of over 30% was obtained.

It is sectional drawing which shows the strip | belt-shaped high frequency transmission line by one Example of this invention. FIG. 2 is a plan view of the film of FIG. 1 (a). FIG. 2 is an enlarged cross-sectional view schematically showing a portion A in FIG. FIG. 2 is an enlarged cross-sectional view schematically showing a portion A ′ of FIG. 1 (c). It is sectional drawing which shows the strip | belt-shaped high frequency transmission line by another Example of this invention. It is the schematic which shows an example of the apparatus which forms a linear trace in a composite film. In the apparatus of Fig.3 (a), it is a partial expanded sectional view which shows a mode that a film slidably contacts with a roll. It is a top view which shows an example of the composite film in which the linear trace was formed. It is a perspective view which shows the parallel type | mold high frequency transmission line by one Example of this invention. It is the schematic which shows the state which connected the oscillator and the receiver to the parallel line type | mold high frequency transmission line. It is a circuit diagram which shows roughly the structure of the oscillator used for the measurement of a high frequency transmission rate. It is the schematic which shows the signal pattern at the time of transmitting so that a signal may be output from the (+) side from an oscillator. It is the schematic which shows the signal pattern at the time of transmitting so that a signal may be output from the (-) side from an oscillator. 3 is a graph showing the relationship between the frequency and the high frequency transmission rate in the parallel line type high frequency transmission line of Example 1. FIG. 6 is another graph showing the relationship between the frequency and the high-frequency transmission rate in the parallel-line type high-frequency transmission line of Example 1. It is a graph which shows the relationship in the parallel line type high frequency transmission line of Example 2, and the high frequency transmission rate. It is another graph which shows the relationship in the frequency in the parallel line type | mold high frequency transmission line of Example 2, and a high frequency transmission rate. It is a graph which shows the relationship between the frequency in the parallel line type | mold high frequency transmission line of Example 3, and a high frequency transmission rate. It is another graph which shows the relationship between the frequency in the parallel line type | mold high frequency transmission line of Example 3, and a high frequency transmission rate. It is a graph which shows the relationship in the frequency in the parallel line type | mold high frequency transmission line of Example 4, and a high frequency transmission rate. It is another graph which shows the relationship between the frequency in the parallel line type | mold high frequency transmission line of Example 4, and a high frequency transmission rate. It is a graph which shows the relationship between the frequency in the parallel line type | mold high frequency transmission line of Example 5, and a high frequency transmission rate. It is another graph which shows the relationship between the frequency in the parallel line type | mold high frequency transmission line of Example 5, and a high frequency transmission rate. It is a graph which shows the relationship between the frequency of the signal transmitted to the parallel line type | mold high frequency transmission line of Examples 1-5, and output amplitude. It is another graph which shows the relationship between the frequency of the signal transmitted to the parallel line type | mold high frequency transmission line of Examples 1-5, and output amplitude. It is a perspective view which shows the example of the conventional high frequency transmission line. It is a perspective view which shows another example of the conventional high frequency transmission line.

Explanation of symbols

1 ... Strip high-frequency transmission line
10, 10 '... Plastic film
11a, 11b ・ ・ ・ Metal thin film
11a ', 11b' ... Metal atoms
12 ... Gradient composition layer
14 ... Linear marks
1 '... conductive film
1 "... Composite film 2 ... Roll 3 ... Nip roll 4 ... Substrate
40 ... convex part 5 ... high frequency oscillator
50 ... Output terminal
51 ・ ・ ・ Voltage controlled oscillator
52, 52 ', 52''・ ・ ・ High frequency oscillation module
53, 53 '... High frequency amplifier 6 ... High frequency receiver 7 ... Higuchi clip 8 ... Matching device
70 ・ ・ ・ Cable

Claims (4)

After forming linear traces on the entire surface by sliding a roll having fine particles of high hardness on the first and second metal thin films sequentially formed on one surface of the plastic film, the linear traces are in the width direction. A strip-shaped high-frequency transmission line that is slit so as to extend in a width distribution of 0.1 to 50 μm, and the average distribution density of the linear marks is 1,000 to 5,000 lines / cm width. And at least a part of the linear trace penetrates the first and second metal thin films, and the first and second metal thin films are at least partially separated in the longitudinal direction. A band-shaped high-frequency transmission line. 2. The band-shaped high-frequency transmission line according to claim 1, wherein the first and second metal thin films are vapor deposition layers . A parallel type high-frequency transmission line comprising the two spaced strip-shaped high-frequency transmission lines according to claim 1 or 2 in parallel. 4. The parallel type high frequency transmission line according to claim 3 , wherein the two band-like high frequency transmission lines are arranged on the same surface of the dielectric substrate.

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