200835045 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種具有高頻傳送率之頻率相關性的導電 薄膜、其製法及使用如此之導電薄膜的高頻零件。 【先前技術】 個人電腦等之資訊處理機器、行動電話等之無線通信機 器等習知所使用之高頻傳送線路係具有由如第3 5圖所示 之內導體110、介電體200及外導體110’所構成的同軸電 纜，或具有如第36圖所示之具有四角剖面的金屬製之導波 管120等。同軸電纜及導波管係具有等方向性（兩方向均 相同）之傳送特性。 另外有：於介電體基板2 1 0之一面，設置平行之一對帶 狀導體130、130的高頻傳送線路（第37圖）；於介電體 基板210之兩面設置接地導體140、140，中心部設置導體 130的局頻傳送線路（第38圖）；於介電體基板210之一 面設置接地導體140，另一面設置帶狀導體130的高頻傳 送線路（第39圖）；於陶瓷介電體基板210之一面設置帶 狀導體1 3 0，於其兩側配置接地導體1 4 0、1 4 0的高頻傳送 線路（第40圖）等。 日本專利特開平7 -3 36 1 1 3號公報係揭示一種具有導體 膜之尚頻傳送線路，其中該導體膜係具有使用頻率中的表 皮深度1.14〜2.75倍之膜厚。於第37及40圖顯示此高頻 傳送線路之構造例。於陶瓷介電體基板2 1 0之上平行所設 置的導體膜1 3 0、1 4 0中，對應於頻率，並無高頻傳送率之 頻率相關性。但是，若具有高頻傳送率之頻率相關性的話， 200835045 各種有用之高頻零件將可以得到。 【發明內容】 〔發明所欲解決之技術問題〕 因而，本發明之目的在於提供一種具有高頻傳送率之頻 率相關性的導電薄膜，其製法及使用如此之導電薄膜的高 頻零件。 〔解決問題之技術手段〕 有鑑於上述之目的而鑽硏的結果，本發明人等發現下列 Φ 事實而想到本發明，形成透過傾斜組成層而接合於塑膠薄 膜的二層金屬薄膜之後，若於通電中加壓的同時，形成許 多微細孔或凹部的話，可以得到具有高頻傳送率之頻率相 關性的導電薄膜。 亦即，本發明之導電薄膜，其特徵在於··具有塑膠薄膜、 設置於其至少一面的第一金屬薄膜、與形成於其上之第二 金屬薄膜；於該第一金屬薄膜與該第二金屬薄膜之間，形 成金屬組成比於厚度方向上變化的層；具有至少開口於該 Φ 第二金屬薄膜側的許多微細孔或凹部，該孔或凹部係於通 電中加壓於該第二金屬薄膜的同時予以形成。 此導電薄膜較佳爲也於該塑膠薄膜與該第一金屬薄膜 之間，形成該第一金屬之比例於厚度方向上變化的層。 於導電薄膜之較佳例中，第一金屬爲鎳，第二金屬爲 銅。此情形下，第一金屬薄膜與該第二金屬薄膜的厚度比 較佳爲1/20〜1/2。具體而言，較佳爲第一金屬薄膜之厚度 較佳爲10〜70nm，第二金屬薄膜之厚度爲0.1〜l//m。 於導電薄膜之另一較佳例中，第一金屬爲銅，第二金屬 200835045 爲鎳。此情形下，第一金屬薄膜與第二金屬薄膜的厚度比 較佳爲2/1〜20/1。具體而言，較佳爲第一金屬薄膜之厚度 爲0.1〜Ιμιη，該第二金屬薄膜之厚度爲10〜7 0nm。 於導電薄膜之再另一較佳例中，該第二金屬薄膜爲蒸鍍 層。 於導電薄膜之再另一較佳例中，該第二金屬薄膜係由該 第二金屬之蒸鍍層與該第二金屬之電鍍層所構成。 於導電薄膜之再另一較佳例中，該第一金屬薄膜爲蒸鍍 層。 該微細孔或凹部較佳爲具有0.1〜100/zm之平均開口 徑。該微細孔或凹部的平均密度較佳爲500個/cm2以上。 本發明之導電薄膜之製法，其特徵在於：藉由在塑膠薄 膜之至少一面依序形成第一金屬薄膜與第二金屬薄膜，使 所得的複合薄膜通過表面上附著許多硬質粒子的第一輥與 表面爲平滑的第二輥之間，形成至少開口於該第二金屬薄 膜側的許多微細孔或凹部，此時對該第二金屬薄膜進行通 電。 該輥之按壓力較佳爲7〇kg f/mm幅寬以上。較佳爲施加 於該第二金屬薄膜之電壓與電流密度分別爲5V以上與 20A/m2 以上。 本發明之高頻零件係具備上述導電薄膜。 高頻零件之較佳例，係具備平行配置二條該導電薄膜而 成的高頻傳送線路’及此高頻傳送線路之高頻濾波器。 〔發明之效果〕 因爲本發明之導電薄膜具有咼頻傳送率的頻率相關 200835045 性，有用於各種筒頻零件。例如，一旦利用於高頻傳送線 路時，效率佳地傳送所期望之頻率帶域的同時，能夠切斷 除此以外之頻率帶域。 【實施方式】 〔1〕導電薄膜 (1 )構造 第1 ( a )圖〜（d )係顯示本發明導電薄膜之一例。於 塑膠薄膜10之一面，同樣地形成第一及第二之金屬薄膜 11a、lib，於兩金屬薄膜11a、lib之間形成第一金屬與第 二金屬之組成比於厚度方向上變化的傾斜組成層1 2，於兩 金屬薄膜1 1 a、1 1 b，於通電中加壓的同時，設置所形成的 許多微細孔1 4。 於傾斜組成層1 2中，金屬組成比較佳爲大致連續性變 化。於塑膠薄膜1 0與金屬薄膜1 1 a之間，適佳爲金屬比例 形成從金屬薄膜1 1 a至塑膠薄膜1 0而減少的傾斜組成層 12。第1(c)圖係槪略顯示第二金屬原子lib’部分進入 第一金屬原子1 1 a ’之間的樣子，第1 ( d )圖係槪略顯示 第一金屬原子11a’部分進入薄膜10的塑膠分子10’之間 的樣子。 因爲許多微細孔1 4係如後所述，根據於表面具有高硬 度微粒之輥而形成，具有各種之深度，但是並無貫穿塑膠 薄膜1 0之必要。 第2(a)圖及第2(b)圖係顯示導電薄膜之另一例。 因爲於此導電薄膜中，第一金屬薄膜11a係由金屬箔所構 成’於第一金屬薄膜11a與塑膠薄膜1〇之間設置黏著層 200835045 13。除了黏著層13以外’此導電薄膜係相同於第1圖所示 者。 第3(a)圖及第3(b)圖係顯示導電薄膜之再另一例。 此導電薄膜係於塑膠薄膜1 0之兩面，同樣地形成第一及第 一之金屬薄膜11a、lib’除了於第一及第二之金屬薄膜 1 1 a、1 1 b設置許多微細孔1 4以外，相同於第1圖所示者。 第4圖係顯示導電薄膜之再另一例。於塑膠薄膜1 〇之 兩面，形成第一及第二之金屬薄膜1 1 a、1 1 b，並且許多微 細孔1 4幾乎貫穿導電薄膜。認爲金屬薄膜1 1 a、丨丨b係於 貫穿孔之形成中進行塑性變形。 第5圖係顯示導電薄膜之再另一例。此導電薄膜係除了 於塑膠薄膜10之一面，將由第一及第二之金屬薄膜11a、 1 1 b所構成的二條帶狀積層金屬薄膜平行地形成以外，相 同於第1圖所示者。 第6圖係顯示導電薄膜之再另一例。此導電薄膜係除了 於塑膠薄膜10之一面，形成一條帶狀積層金屬薄膜（由第 一及第二之金屬薄膜11a、lib所構成），另一面同樣地形 成積層金屬薄膜（由第一及第二之金屬薄膜11a、lib所構 成）以外，相同於第1圖所示者。 第7圖係顯示導電薄膜之再另一例。此導電薄膜係除了 於塑膠薄膜10之一面，設置三條帶狀積層金屬薄膜（分別 由第一及第二之金屬薄膜1 1 a、1 1 b所構成）以外，相同於 第1圖所示者。 (2)塑膠薄膜 構成塑膠薄膜1 0之樹脂並未予以特別限定，可舉出例 200835045 如，聚酯、聚苯硫醚'聚醯胺、聚醯亞胺、聚醯胺醯亞胺、 聚醚礪、聚醚醚酮、聚碳酸酯、丙烯酸樹脂、聚苯乙烯、 ABS樹脂、聚胺基甲酸酯、氟樹脂、聚烯烴（聚乙烯、聚 丙烯等）、聚氯乙烯 '熱可塑性彈性體等。其中，適佳爲 如聚酯、聚苯硫醚、聚醯胺、聚醯亞胺、聚醯胺醯亞胺、 聚醚碾I及聚醚醚酮之高耐熱性樹脂，尤以聚酯、聚苯硫醚 及聚醯亞胺爲特佳。聚酯可列舉··聚對苯二甲酸乙二酯 (PET)、聚對苯二甲酸丁二酯（PBT)、聚萘二甲酸乙二 酯、聚萘二甲酸丁二酯等。其中，因爲PET薄膜及pbt薄 膜已廉價市售中故較佳。 (3 )金屬薄膜 第一及第二之金屬薄膜11a、11b適佳爲不同的電阻。常 溫下’第一及第二之金屬薄膜11a、lib之電阻差較佳爲2 χ10_6Ω ·οπι 以上，更佳爲 4χ10-6Ω .cm 以上。 第一及第二之金屬可列舉：銅〔電阻·率（20 °C )·· 1.6730 χ10_6Ω ·ογπ〕、鋁〔電阻率（20°C ) : 2·6548χ10-6Ω πιη〕、 銀〔電阻率（20°C) :1.59xlO_6Q*cm〕、金〔電阻率（20 °C ) : 2.3 5x10 — 6Ω ·οπι〕、鉑〔電阻率（20°C ) ·· 1〇·6χ10 —6Ω ιπι〕、鎳〔電阻率（20°C ) : 6·84χ10_ 6Ω .cm〕、鈷 〔電阻率（20°C) :6·24χ10— 6Ω%ιη〕、鈀〔電阻率（20 t) :10·8χ1〇-6Ωιιη〕、錫〔電阻率（0°C) :11·〇χ10 — 6Ω -cm) 及此等之合金等。 第一及第二之金屬係使電阻不同之方式來從上述之中 來加以選擇。第一金屬/第二金屬之較佳組合爲銅/鎳及鎳/ 銅。 -10- 200835045 不論第一金屬及第二金屬之電阻大小，較佳爲將電阻爲 小的金屬薄膜與電阻爲大的金屬薄膜之厚度比設爲2/1〜 20/1。尤其，兩金屬薄膜爲蒸鍍膜之情形，較佳爲將此比 設爲3/1〜15/1。具體而言，電阻爲小的金屬薄膜之厚度較 佳爲0.1〜35μιη，更佳爲0.1〜l/zm，最佳爲0.2〜0.7/zm。 另外，電阻爲大的金屬薄膜之厚度較佳爲1 Onm〜20 μ m， 更佳爲10〜70nm，最佳爲20〜60nm。若電阻爲小的金屬薄 膜之厚度低於0.1 μ m的話，高頻傳送效率爲差的。另一方 φ 面，若超過1 /z m的話，高頻傳送率之頻率相關性將降低。 第一金屬薄膜1 1 a較佳爲藉由蒸鍍或箔而形成。第二金 屬薄膜1 1 b係藉由蒸鍍以形成至少與第一金屬薄膜1 1 a接 合之層。因而，第二金屬薄膜1 1 b可以爲蒸鍍膜，也可以 爲蒸鑛膜+電鑛層。 (4 )傾斜組成層 (a) 第一金屬薄膜與第二金屬薄膜之間 如第1 ( c )圖所示，於傾斜組成層12中，因爲第二金 φ 屬原子lib’已部分進入第一金屬原子11a’之間，第二金 屬原子11b’之組成比（濃度）係從第二金屬薄膜lib至第 一金屬薄膜11a減少。兩金屬原子11a’ 、lib’之濃度慢 慢改變之傾斜組成層1 2被推定爲非晶質。 (b) 金屬薄膜與塑膠薄膜之間 如第1 ( d )圖所示，於傾斜組成層12’中，因爲第一 金屬原子11a’已部分進入薄膜10之塑膠分子10’之間， 第一金屬原子11a’之組成比（濃度）係從第一金屬薄膜 1 1 a至塑膠薄膜1 〇減少。 -11- 200835045 (5 )微細孔或凹部 爲了得到優越之高頻傳送特性，於導電薄膜1中形成微 細孔或凹部（也一倂稱爲「微細孔」）1 4。如第1圖所示， 若微細孔1 4至少貫穿金屬薄膜1 1 a、1 1 b的1舌，直到塑膠 薄膜10之中途也可以。當然如第4圖所示，微細孔14也 可以貫穿塑膠薄膜10。 微細孔1 4之平均開口徑較佳爲0.1〜1 00 μ m，更佳爲0.5 〜5 0 // m。使微細孔1 4之平均開口徑低於0.1从m，技術上 φ 爲困難的。另外，若使微細孔1 4之平均開口徑超過100//111 的話，導電薄膜1之強度將降低。爲了具有良好之傳送損 失，平均開口徑之上限以20/zm爲特佳，最佳爲10/zm。 平均開口徑係藉由在導電薄膜1之原子間力顯微鏡照片的 任意視野中，測定複數個微細孔1 4之開口徑，予以平均而 求得。 微細孔14之平均密度較佳爲500個/cm2以上，更佳爲5 xlO3個/cm2以上。若微細孔14之平均密度低於500個/cm2 φ 的話，傳送損失將過大。爲了抑制傳送損失，微細孔1 4之 平均密度較佳爲lxl〇4〜3xl05個/cm2,更佳爲IxlO4〜2xl05 個/cm2。微細孔14之平均密度也藉由在導電薄膜1之原子 間力顯微鏡照片的任意視野中，量測微細孔14之數目，每 單位面積予以平均而求得。 如第4 ( b )圖所示，根據微細孔14之形成，金屬薄膜 1 1 a、1 1 b將塑性變形，此等之一部分係沿著微細孔1 4之壁 面而延伸。根據金屬薄膜11a、11b之塑性變形，高頻傳送 率之頻率相關性將提高。認爲此係因爲根據金屬薄膜1 1 a、 胃12- 200835045 1 lb之塑性變形，兩金屬將於傾斜組成層丨2中混合。 (6 )電阻率 爲了得到高頻傳送率之高的頻率相關性，由金屬薄膜 11a、lib所構成的積層物之電阻率（簡稱爲「導電薄膜之 電阻率」），銅與鎳組合之情形，較佳爲2 X 1 0 - 6〜1 5 0 X 1 0 —6Ω ·οπι，更佳爲 3x10— 6 〜100χ10-6Ω .cm。 〔2〕導電薄膜之製法 導電薄膜1係利用蒸鍍法或箔接合法而在塑膠薄膜i 〇 φ 之一面或兩面形成第一金屬薄膜11a，於其上，利用蒸鍍 法或是蒸鍍法及電鍍法而形成第二金屬薄膜11b，藉由使 所得的複合薄膜通過表面上附著許多硬質粒子之第一輥與 表面爲平滑之第二輥之間，形成至少開口於第二金屬薄膜 1 1 b側之許多微細孔1 4，此時，藉由從輥之一側向另一側， 對第二金屬薄膜lib進行通電而製造。因爲於第一金屬薄 膜1 1 a與第二金屬薄膜11 b之間形成傾斜組成層1 2，於塑 膠薄膜1 0與第一金屬薄膜1 1 a之間並無形成傾斜組成層 φ 12’之必要。例如，於顯示於第2圖之導電薄膜1中，使 由金屬箔所構成的第一金屬薄膜Ua黏著於塑膠薄膜10, 利用蒸鍍法或是蒸鍍法及電鍍法而形成第二金屬薄膜1 lb 之後，形成微細孔14的同時，進行通電。 (1 )金屬薄膜之形成 金屬之蒸鍍能夠利用例如真空蒸鍍法、濺鍍法、離子鍍 法等之物理蒸鍍法；電漿CVD法、熱CVD法、光CVD法 等之化學氣相蒸鍍法等進行。第二金屬薄膜1 1 b係由蒸鍍 層及電鍍層所構成的情形，電鍍層能夠利用習知方法以形 -13- 200835045 成。 (2 )微細孔之形成 第8圖係顯示於塑膠薄膜1 〇中形成第一及第二之金屬 薄膜11a、11b的複合薄膜Γ之中，進行通電的同時，形 成微細孔14之裝置。藉由使從捲出機55回繞的複合薄膜 1’經由跳動輥（dancer roll ) 60及開幅輥61，於均勻按壓 力下，通過表面上具有許多高硬度微粒之第一輥64與表面 爲平滑之第二輥65之間，形成至少開口於第二金屬薄膜 φ lib側之許多微細孔14，此時，藉由電極輥62a、62b而對 第二金屬薄膜lib進行通電。所得的導電薄膜1係經由一 對之Z回繞輥67、67及跳動輥68，捲取於捲取機56上。 如第9圖所示，一對電極輥62&、621)係設置於第一輥 64之前後，一對電極輥63a、63b係設置於第二輥65之前 後。電源70a( 70b)連接於支持電極輥62a、62b( 63a、63b) 之套筒620a、620b ( 630a、630b)，能夠將電壓施加於電 極輥 62a、62b ( 63a、63b )。 φ 第一輥64係藉由鍍鎳或鍍鉻之電極沈積法以將許多硬 質微粒（鑽石微粒）附著於金屬製輥表面之物（鑽石輥）。 第二輥65係硬質金屬輥。鑽石輥之詳細內容已記載於日本 專利特開2002-59487號公報。 (a ) —面具有金屬薄膜之情形 第10圖係顯示於進行通電的同時，於具有第一及第二 之金屬薄膜1 1 a、1 1 b的複合薄膜Γ 中形成微細孔之樣 子。使金屬薄膜形成於第一輥64側，於均勻按壓下，使複 合薄膜1’通過第一及第二之輥64、65間的同時，藉由電 -14- 200835045 極輥62a、62b而對第二金屬薄膜1 lb進行通電。 電源70a可以爲直流電源或交流電源中任一種。直流電 壓也可以爲脈衝電壓。電壓及電流密度係對應於高頻信號 之頻率而加以適當設定。電壓較佳爲5 V以上，更佳爲8 V 以上。若電壓低於5 V的話，電阻之增加爲不足。電壓.之 上限較佳爲30V，更佳爲25V。使用交流電源之情形，頻 率較佳爲10Hz〜1MHz，更佳爲100〜10000Hz。電流密度 較佳爲20A/m2以上，更佳爲25A/m2以上。電流密度之上 φ 限較佳爲70A/m2，更佳爲50A/m2。 藉由第一及第二之輥64、65而施加於複合薄膜1’之按 壓力，係可對應於高頻信號之頻率而予以較佳設定，較佳 爲70kfg/mm幅寬以上，更佳爲80〜1000kfg/mm幅寬。 複合薄膜1’之搬送速度_較佳爲20〜100m /分鐘，更佳 爲25〜8 0m/分鐘。若此速度低於2〇m/分鐘的話，塑膠薄膜 1 0將有劣化之疑慮。另一方面，若超過1 〇 〇 m /分鐘的話， 電阻之增加將不足。 φ 還有，必要的話，使複合薄膜Γ通過第一及第二之輥 64、65間之際，也可以使金屬薄膜形成於第二輥65之側。 (b )兩面具有金屬薄膜之情形 第11圖係顯示進行通電的同時，於兩面具有第一及第 二之金屬薄膜11a、11b的複合薄膜1’形成微細孔之樣 子。此情形下，藉由一對電極輥62a、62b而對金屬薄膜1；^ 進行通電的同時，藉由一對電極輥6 3a、63b而對金屬薄膜 lib進行通電。 根據如上所述之加壓通電，可以得到優越之高頻傳送率 -15- 200835045 的頻率相關性。 〔3〕高頻零件 本發明之高頻零件具備該導電薄膜。高頻零件之較佳例 可列舉：高頻傳送線路及高頻濾波器。 (1 )高頻傳送線路 第12圖係顯示本發明之高頻傳送線路之一例。此高頻 傳送線路係於由塑膠、絕緣性陶瓷等所構成的介電體基板 2之上面，平行配置二條帶狀導電薄膜1〇〇、1〇〇。帶狀導 Φ 電薄膜100、100係利用習知方法而將導電薄膜1形成條 狀。因爲電場集中於二條帶狀導電薄膜100、100之間，能 夠有效傳送高頻信號。爲了得到優越之高頻傳送性，介電 體基板2較佳爲於二條帶狀導電薄膜1 〇〇、1 〇〇之間具有凸 部20。 各導電薄膜100、100之寬度（h係對應於高頻信號之頻 率及振幅等而加以適當設定，較佳爲1〜l〇mm，更佳爲1.5 〜7mm。若寬度ch爲1mm以上的話，具有足夠的高頻信號 0 傳送性。另外，即使寬度L超過10mm，也將無法得到進 一步提高高頻信號傳送性。 二條帶狀導電薄膜100、100之間隔d2較佳爲1〜l〇mm ’ 更佳爲1 · 5〜7 m m。若間隔d 2低於1 m m的話，高頻信號傳 送性爲不足，另一方面，若超過1 〇mm的話，放射損失爲 多的。凸部20之高度h較佳爲1〜10mm，更佳爲1.5〜7mm。 導電薄膜100、100並不受配置於介電體基板之同一面 上所限定，也可以配置於剖面口字形介電體基板之對向內 面上、或是剖面L字形介電體基板的正交內面上。 -16- 200835045 本發明之高頻傳送線路具有優越之頻率相關性及高頻 傳送率，而且，高頻特性之隨時間經過並無變化。另外， 因爲具有較高的電阻，也有能夠省略終端電阻之情形。因 爲本發明之導電薄膜具有高頻傳送率爲100%以上之頻率 帶域、與高頻傳送率幾乎爲〇%之頻率帶域，具有優越之 濾波機能。另外，因爲於傳送方向具有異方向性，也具有 防止來自外部之信號進入的駭客（hacker )防止機能。 (2 )高頻濾波器 本發明之高頻濾波器係具有連接於上述高頻傳送線路 之輸入端子及輸出端子的簡單構造。第1 3圖係顯示如此高 頻濾波器之一例。第二金屬薄膜11 b具有較第一金屬薄膜 11 a爲小的電阻之情形，較佳爲於第二金屬薄膜1 1 b設置端 子4。本發明之高頻濾波器具有優越之頻率相關性及高頻 傳送率。 (3 )其他之高頻零件 其他之高頻零件可列舉：高頻共振器、高頻電極、高頻 信號用分配器、平面傳送線路-導波管線路變換器、高頻增 幅元件、天線（例如，電子標籤用天線）等。此等之高頻 零件也可以爲將輸入端子及輸出端子連接於上述高頻傳送 線路的簡單構造。 根據以下之實施例以進一步詳細說明本發明，但是本發 明並不受此等實施例所限定。 實施例1 (1)帶狀導電薄膜之製作 (i )複合薄膜之製作 -17- 200835045 於雙軸拉伸PET薄膜〔厚度：12 // m、介電常數：3.2 (1MHz )、介電正切：1 ·0% ( 1MHz ).、熔點：265 °C、玻 璃轉移溫度：75 °C〕之一面，利用真空蒸鍍法以形成厚度 0.3 // m之銅層，於其上，利用蒸鍍法以形成厚度20nm之 鎳層。針對將所得的複合薄膜切割成50cmx3 mm之試驗片， 測定長度方向之電阻的結果爲8 Ω。 (ii)加壓通電 使用顯示於第8圖之裝置，於第一輥（鑽石微粒之粒徑 φ 3 μ m ) 64與第二輥65之間，於100kgf/mm幅寬之壓力下、 以3 0m/分鐘之速度，使複合薄膜予以通過的同時，使鎳層 接觸於一對電極輥62a、62b，施加來自電源70a之24V的 脈衝電壓（開/關均爲30毫秒）。電流密度爲35A/m2。所 得的導電薄膜之微細孔的平均密度爲5x1 04個/cm2。將導電 薄膜切割成5〇cmx3mm之試驗片的電阻（於長度方向測定） 爲 100Ω 〇 (2 )高頻傳送線路之製作 φ 使PET薄膜成爲基板側之方式，將二條帶狀導電薄膜平 行黏著於氯乙烯樹脂製之基板，製作顯示於第1 2圖之平行 線路型的高頻傳送線路（長度：5 0cm、二修帶狀導電薄膜 之間隔ch: 3mm)。 實施例2 除了施加15V之脈衝電壓（35A/m2之電流密度）以外， 進行相同於實施例1之方式而製作帶狀導電薄膜。帶狀導 電薄膜之電阻爲32Ω，微細孔之平均密度係5x1 04個/cm2。 除了使用此帶狀導電薄膜以外，進行相同於實施例1之方 -18- 200835045 式而製作局頻傳送線路。 實施例3 除了施加18V之脈衝電壓（35A/m2之電流密度）以外， 進行相同於實施例1之方式而製作帶狀導電薄膜。帶狀導 電薄膜之電阻爲49Ω，微細孔之平均密度係5x1 04個/cm2。 除了使用此帶狀導電薄膜以外，進行相同於實施例1之方 式而製作高頻傳送線路。 實施例4 φ 除了將18V之脈衝電壓（35A/m2之電流密度）施加於 6 0m/分鐘速度之複合薄膜以外，進行相同於實施例1之方 式而製作帶狀導電薄膜。帶狀導電薄膜之電阻爲18Ω，微 細孔之平均密度係5x1 04個/cm2。除了使用此帶狀導電薄膜 以外，進行相同於實施例1之方式而製作高頻傳送線路。 實施例5 除了施加頻率5000Hz、10V之交流電壓（45A/m2之電流 密度）後，切割成5 m m寬度以外，進行相同於實施例1之 ^ 方式而製作帶狀導電薄膜。帶狀導電薄膜之電阻爲52Ω， 微細孔之平均密度係5x104個/cm2。除了使用此帶狀導電薄 膜以外，進行相同於實施例1之方式而製作高頻傳送線路。 實施例6 除了施加頻率5000Hz、10V之交流電壓（30A/m2之電流 密度）之後，切割成5mm寬度以外，進行相同於實施例1 之方式而製作帶狀導電薄膜。帶狀導電薄膜之電阻爲 47 Ω，微細孔之平均密度係5x1 04個/cm2。除了使用此帶狀 導電薄膜以外，進行相同於實施例1之方式而製作高頻傳 -19- 200835045 送線路。 實施例7 於PET薄膜之一面，利用真空蒸鍍法以形成厚度〇.3 # m 之銅層後，形成厚度50nm之鎳層。將所得的複合薄膜切割 成5Ocmx5mm的試驗片之電阻（於長邊方向測定）爲8 Ω。 於500kfg/mm幅寬之壓力下，以30m/分鐘之速度，使複合 薄膜通過輥對64、65的同時，施加10V之脈衝電壓（電流 密度係30A/m2)，切割成5mm寬度以外，進行相同於實施 φ 例1之方式而製作帶狀導電薄膜。帶狀導電薄膜之電阻爲 1 6 Ω，微細孔之平均密度係5X 1 04個/cm2。除了使用此帶狀 導電薄膜以外，進行相同於實施例1之方式而製作高頻傳 送線路。 實施例8 除了使用厚度16/zm之雙軸拉伸PET薄膜，將銅層之厚 度作成0.5 /z m以外，進行相同於實施例7之方式而製作複 合薄膜。將複合薄膜切割成50cmx5mm的試驗片之電阻爲 I 8 Ω。對於複合薄膜，藉由形成相同於實施例7之微細孔而 進行切斷，所得的帶狀導電薄膜之電阻爲1 7 Ω，微細孔之 平均密度係5x104個/cm2。除了使用此帶狀導電薄膜以外， 進行相同於實施例1之方式而製作高頻傳送線路。 實施例9 於雙軸拉伸聚苯硫醚薄膜〔厚度：12/zm、介電常數：3 (1 MHz )、介電正切：〇. 〇 〇 2 ( 1 Μ Η z )、熔點：2 8 5 °C、玻 璃轉移溫度：90°C〕之一面，利用真空蒸鍍法以形成厚度 50nm之鎳層後，形成厚度〇.2//m之銅層。將所得的複合 -20- 200835045 薄膜切割成50cmx3mm之試驗片後所得的試驗片之 10 Ω。對於複合薄膜，藉由形成相同於實施例7之 後而進行切斷，所得的帶狀導電薄膜之電阻爲1 6 Ω 孔之平均密度係5x1 04個/cm2。除了使用此帶狀導電 外，進行相同於實施例1之方式而製作高頻傳送線ί 比較例1 將厚度1 2 // m之壓延銅箔黏著於雙軸聚醯亞胺薄 度：25/zm、介電常數：3.3(1ΜΗζ)、介電正切： φ ( 1MHz)、玻璃轉移溫度：280°C以上〕之一面。 18V之脈衝電壓（35A/m2之電流密度）施加於所得 膜以外，進行相同於實施例1之方式而製作帶狀 膜。於加壓通電前後，電阻之變化則無。除了使用 導電薄膜以外，進行相同於實施例1之方式而製作 送線路。 比較例2 除了施加20V之脈衝電壓（40A/m2之電流密度） $ 進行相同於比較例1之方式而製作帶狀導電薄膜。 通電前後，電阻之變化則無。除了使用此帶狀導電 外，進行相同於實施例1之方式而製作高頻傳送線 比較例3 除了施加25V之脈衝電壓（50A/m2之電流密度） 進行相同於比較例1之方式而製作帶狀導電薄膜。 通電前後，電阻之變化則無。除了使用此帶狀導電 外，進行相同於實施例1之方式.而製作高頻傳送線 比較例4 電阻爲 微細孔 ，微細 薄膜以 膜〔厚 0.0079 除了將 的積層 導電薄 此帶狀 高頻傳 以外， 於加壓 薄膜以 路。 以外， 於加壓 薄膜以 路。 -21· 200835045 於聚醯亞胺薄膜之一面，利用真空蒸鍍法以形成厚度 3.0# m之銅層，於其上形成10#111之鎳層。對於所得的複 合薄膜，藉由形成相同於實施例7之微細孔後而進行切 斷，所得的帶狀導電薄膜之電阻爲0.1 Ω，微細孔之平均密 度係5x1 04個/cm2。除了使用此帶狀導電薄膜以外，進行相 同於實施例1之方式而製作高頻傳送線路。 比較例5 除了不形成微細孔以外，進行相同於實施例7之方式而 φ 製作帶狀導電薄膜。帶狀導電薄膜之電阻爲8 Ω。除了使 用此帶狀導電薄膜以外，進行相同於實施例1之方式而製 作高頻傳送線路。 比較例6 除了不通電，於500kfg/mm幅寬之壓力下’以30m/分鐘 之速度，使通過輥對64、65的同時’形成微細孔以外，進 行相同於實施例7之方式而製作帶狀導電薄膜。帶狀導電 薄膜之電阻爲13Ω，微細孔之平均密度係5x1 04個/cm2。 ^ 除了使用此帶狀導電薄膜以外，進行相同於實施例1之方 式而製作高頻傳送線路。 將實施例1〜9及比較例1〜6之帶狀導®薄膜的製作條 件及物性顯示於表1 : -22- 200835045 【表1】BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a conductive film having a frequency dependence of a high frequency transmission rate, a method of manufacturing the same, and a high frequency component using such a conductive film. [Prior Art] A high-frequency transmission line used in a conventional wireless communication device such as an information processing device such as a personal computer or a mobile phone has an inner conductor 110, a dielectric body 200, and the like as shown in FIG. The coaxial cable formed by the conductor 110' or the metal waveguide 120 having a four-corner cross-section as shown in Fig. 36 or the like. Coaxial cables and waveguides have the same directionality (same in both directions). In addition, a high-frequency transmission line of a pair of strip conductors 130 and 130 is arranged on one side of the dielectric substrate 210 (FIG. 37); and ground conductors 140 and 140 are disposed on both sides of the dielectric substrate 210. a central frequency transmission line of the conductor 130 is disposed at the center portion (Fig. 38); a ground conductor 140 is disposed on one surface of the dielectric substrate 210, and a high frequency transmission line of the strip conductor 130 is disposed on the other surface (Fig. 39); A strip conductor 1 300 is provided on one surface of the dielectric substrate 210, and a high frequency transmission line (Fig. 40) of the ground conductors 1400-1400 is disposed on both sides thereof. Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. An example of the construction of this high-frequency transmission line is shown in Figs. In the conductor films 1300 and 1400 provided in parallel on the ceramic dielectric substrate 210, there is no frequency dependence of the high frequency transmission rate corresponding to the frequency. However, if there is a frequency dependence of the high frequency transmission rate, various useful high frequency parts will be available in 200835045. SUMMARY OF THE INVENTION [Technical Problem to be Solved by the Invention] Accordingly, it is an object of the present invention to provide a conductive film having a frequency dependence of a high frequency transmission rate, a method of producing the same, and a high frequency component using such a conductive film. [Means for Solving the Problem] The inventors of the present invention have found the following Φ facts in view of the above-described results, and have conceived the present invention to form a two-layer metal film which is bonded to a plastic film through a tilted constituent layer, and When a large number of fine holes or recesses are formed while pressurizing during energization, a conductive film having a frequency dependence of a high frequency transfer rate can be obtained. That is, the conductive film of the present invention has a plastic film, a first metal film disposed on at least one side thereof, and a second metal film formed thereon; and the first metal film and the second film Between the metal thin films, a layer having a metal composition change in a thickness direction is formed; and there are a plurality of fine holes or recesses opening at least on the side of the Φ second metal film, the holes or recesses being pressed against the second metal during energization The film is formed at the same time. Preferably, the conductive film is also formed between the plastic film and the first metal film to form a layer in which the ratio of the first metal varies in the thickness direction. In a preferred embodiment of the conductive film, the first metal is nickel and the second metal is copper. In this case, the thickness ratio of the first metal thin film to the second metal thin film is preferably 1/20 to 1/2. Specifically, the thickness of the first metal thin film is preferably 10 to 70 nm, and the thickness of the second metal thin film is 0.1 to 1 / m. In another preferred embodiment of the conductive film, the first metal is copper and the second metal 200835045 is nickel. In this case, the thickness ratio of the first metal film to the second metal film is preferably 2/1 to 20/1. Specifically, it is preferable that the thickness of the first metal thin film is 0.1 to Ιμηη, and the thickness of the second metal thin film is 10 to 70 nm. In still another preferred embodiment of the electroconductive film, the second metal film is an evaporation layer. In still another preferred embodiment of the electroconductive thin film, the second metal thin film is formed of the vapor deposited layer of the second metal and the electroplated layer of the second metal. In still another preferred embodiment of the electroconductive film, the first metal film is an evaporation layer. The fine holes or recesses preferably have an average opening diameter of 0.1 to 100/zm. The average density of the fine pores or the concave portion is preferably 500 pieces/cm2 or more. The method for preparing a conductive film of the present invention is characterized in that: by forming a first metal film and a second metal film sequentially on at least one side of the plastic film, the obtained composite film is passed through a first roll on which a plurality of hard particles are attached. A plurality of fine holes or recesses opening at least on the side of the second metal film are formed between the smooth second rolls, and the second metal film is energized. The pressing force of the roller is preferably 7 〇kg f/mm or more. Preferably, the voltage and current density applied to the second metal thin film are 5 V or more and 20 A/m 2 or more, respectively. The high frequency component of the present invention includes the above conductive film. A preferred example of the high-frequency component is a high-frequency transmission line ′ in which two conductive films are arranged in parallel, and a high-frequency filter of the high-frequency transmission line. [Effects of the Invention] Since the electroconductive film of the present invention has a frequency-dependent 200835045 property of the 咼 frequency transmission rate, it is used for various tube frequency parts. For example, when used in a high-frequency transmission line, it is possible to efficiently transmit a desired frequency band while cutting off the frequency band other than this. [Embodiment] [1] Conductive film (1) structure Figs. 1(a) to (d) show an example of a conductive film of the present invention. The first and second metal thin films 11a and 11b are formed on one surface of the plastic film 10, and the composition of the first metal and the second metal is changed between the two metal thin films 11a and 11b in a thickness direction. The layer 12 is provided with a plurality of fine pores 14 formed while the two metal thin films 1 1 a and 1 1 b are pressurized while being energized. In the inclined composition layer 12, the metal composition is preferably substantially continuous. Between the plastic film 10 and the metal film 11a, a metal composition ratio is preferably formed to form a sloped composition layer 12 which is reduced from the metal film 11a to the plastic film 10. Figure 1(c) shows a schematic view of the portion of the second metal atom lib' entering the first metal atom 1 1 a ', and the first (d) diagram shows the portion of the first metal atom 11a' entering the film. The appearance of 10 plastic molecules between 10'. Since many of the fine pores 14 are formed as follows, they are formed according to rolls having high hardness particles on the surface, and have various depths, but are not required to penetrate the plastic film 10 . Figures 2(a) and 2(b) show another example of a conductive film. In this conductive film, the first metal thin film 11a is made of a metal foil, and an adhesive layer 200835045 13 is provided between the first metal thin film 11a and the plastic thin film 1〇. The conductive film is the same as that shown in Fig. 1 except for the adhesive layer 13. Figures 3(a) and 3(b) show still another example of a conductive film. The conductive film is formed on both sides of the plastic film 10, and the first and first metal films 11a, lib' are formed in the same manner. In addition to the first and second metal films 1 1 a, 1 1 b, a plurality of fine holes 14 are provided. Other than the one shown in Fig. 1. Fig. 4 is a view showing still another example of the electroconductive film. On both sides of the plastic film 1 ,, the first and second metal films 1 1 a, 1 1 b are formed, and a plurality of fine holes 14 are almost penetrated through the conductive film. It is considered that the metal thin film 1 1 a and 丨丨b are plastically deformed in the formation of the through holes. Fig. 5 is a view showing still another example of the electroconductive film. This conductive film is formed in parallel with one surface of the plastic film 10, and two strip-shaped laminated metal films composed of the first and second metal films 11a and 1 1 b are formed in parallel, as shown in Fig. 1. Fig. 6 is a view showing still another example of the electroconductive film. The conductive film is formed on a side of the plastic film 10 to form a strip-shaped laminated metal film (consisting of the first and second metal films 11a, lib), and the other side is similarly formed with a laminated metal film (by the first and the first The two metal thin films 11a and 11b are the same as those shown in Fig. 1 . Fig. 7 shows still another example of the electroconductive film. The conductive film is the same as that shown in FIG. 1 except that three strip-shaped laminated metal thin films (which are composed of the first and second metal thin films 1 1 a and 1 1 b respectively) are provided on one surface of the plastic film 10. . (2) The plastic film constitutes a plastic film. The resin of the resin is not particularly limited, and examples thereof are: 200835045, for example, polyester, polyphenylene sulfide, polyamine, polyimine, polyamidimide, poly Ether oxime, polyetheretherketone, polycarbonate, acrylic resin, polystyrene, ABS resin, polyurethane, fluororesin, polyolefin (polyethylene, polypropylene, etc.), polyvinyl chloride 'thermoplastic elasticity Body and so on. Among them, preferred are high heat resistant resins such as polyester, polyphenylene sulfide, polyamidamine, polyimine, polyamidimide, polyether mill I and polyetheretherketone, especially polyester, Polyphenylene sulfide and polyimide are particularly preferred. Examples of the polyester include polyethylene terephthalate (PET), polybutylene terephthalate (PBT), polyethylene naphthalate, and polybutylene naphthalate. Among them, PET films and pbt films are preferred because they are inexpensively commercially available. (3) Metal film The first and second metal films 11a and 11b are preferably different resistors. The difference in electric resistance between the first and second metal thin films 11a and 11b at room temperature is preferably 2 χ 10_6 Ω · οπι or more, more preferably 4 χ 10 -6 Ω·cm or more. Examples of the first and second metals include copper [resistance rate (20 ° C )·· 1.6730 χ 10_6 Ω · ο γ π], aluminum [resistivity (20 ° C): 2·6548 χ 10-6 Ω πιη], silver [resistivity] (20 ° C): 1.59 x lO_6Q * cm], gold [resistivity (20 ° C): 2.3 5x10 - 6 Ω · οπι], platinum [resistivity (20 ° C) · · 1 〇 · 6 χ 10 - 6 Ω ιπι], Nickel [resistivity (20 ° C): 6 · 84 χ 10 _ 6 Ω · cm], cobalt [resistivity (20 ° C): 6 · 24 χ 10 - 6 Ω % ιη], palladium [resistivity (20 t): 10 · 8 χ 1 〇 -6 Ω ιιη], tin [resistivity (0 ° C): 11 · 〇χ 10 - 6 Ω - cm) and these alloys. The first and second metals are selected from the above in such a manner that the resistances are different. A preferred combination of the first metal/second metal is copper/nickel and nickel/copper. -10- 200835045 Regardless of the resistance of the first metal and the second metal, it is preferable to set the thickness ratio of the metal thin film having a small electric resistance to the metal thin film having a large electric resistance to be 2/1 to 20/1. In particular, in the case where the two metal thin films are vapor deposited films, it is preferable to set the ratio to 3/1 to 15/1. Specifically, the thickness of the metal film having a small electric resistance is preferably from 0.1 to 35 μm, more preferably from 0.1 to l/zm, most preferably from 0.2 to 0.7/zm. Further, the thickness of the metal film having a large electric resistance is preferably from 1 Onm to 20 μm, more preferably from 10 to 70 nm, most preferably from 20 to 60 nm. If the thickness of the metal film having a small electric resistance is less than 0.1 μm, the high-frequency transmission efficiency is poor. On the other side of the φ plane, if it exceeds 1 /z m, the frequency dependence of the high-frequency transmission rate will decrease. The first metal thin film 11a is preferably formed by evaporation or foil. The second metal film 11b is formed by vapor deposition to form a layer at least bonded to the first metal film 11a. Therefore, the second metal thin film 1 1 b may be a vapor deposited film or a vaporized film + an electric ore layer. (4) inclined composition layer (a) between the first metal thin film and the second metal thin film as shown in Fig. 1 (c), in the inclined composition layer 12, because the second gold φ belongs to the atom lib' has partially entered the The composition ratio (concentration) of the second metal atom 11b' between the one metal atom 11a' is reduced from the second metal thin film lib to the first metal thin film 11a. The inclined composition layer 12 in which the concentration of the two metal atoms 11a' and lib' is slowly changed is estimated to be amorphous. (b) between the metal film and the plastic film as shown in Fig. 1 (d), in the inclined composition layer 12', since the first metal atom 11a' has partially entered between the plastic molecules 10' of the film 10, first The composition ratio (concentration) of the metal atom 11a' is reduced from the first metal thin film 1 1 a to the plastic thin film 1 〇. -11- 200835045 (5) Micro-holes or recesses In order to obtain superior high-frequency transmission characteristics, fine holes or recesses (also referred to as "micro-holes") 14 are formed in the electroconductive thin film 1. As shown in Fig. 1, the fine holes 14 are inserted through at least one of the metal thin films 1 1 a and 1 1 b until the plastic film 10 is in the middle. Of course, as shown in Fig. 4, the fine holes 14 can also penetrate the plastic film 10. The average opening diameter of the fine pores 14 is preferably from 0.1 to 100 μm, more preferably from 0.5 to 5 0 // m. The average opening diameter of the fine pores 14 is less than 0.1 m, which is technically difficult. Further, when the average opening diameter of the fine pores 14 is more than 100//111, the strength of the electroconductive thin film 1 is lowered. In order to have a good transmission loss, the upper limit of the average opening diameter is particularly preferably 20/zm, and most preferably 10/zm. The average opening diameter is obtained by measuring the opening diameters of the plurality of fine pores 14 in an arbitrary field of view of the atomic force micrograph of the electroconductive thin film 1 and averaging them. The average density of the fine pores 14 is preferably 500 pieces/cm2 or more, more preferably 5 x 10 3 pieces/cm 2 or more. If the average density of the fine holes 14 is less than 500 / cm 2 φ, the transmission loss will be excessive. In order to suppress the transmission loss, the average density of the fine pores 14 is preferably lxl 〇 4 to 3 x 105 / cm 2 , more preferably I x 10 4 to 2 x 10 5 / cm 2 . The average density of the fine pores 14 is also determined by averaging the number of the fine pores 14 in an arbitrary field of view of the atomic force micrograph of the electroconductive thin film 1 per unit area. As shown in Fig. 4(b), the metal thin films 1 1 a, 1 1 b are plastically deformed according to the formation of the micropores 14, and one of these portions extends along the wall surface of the micropores 14. According to the plastic deformation of the metal thin films 11a, 11b, the frequency dependence of the high frequency transmission rate is improved. It is considered that this is because the two metals are mixed in the inclined constituent layer 丨2 according to the plastic deformation of the metal thin film 1 1 a and the stomach 12-200835045 1 lb. (6) The resistivity is a high frequency dependence of the high-frequency transmission rate, and the resistivity of the laminate composed of the metal thin films 11a and 11b (referred to as "the resistivity of the conductive film"), and the combination of copper and nickel Preferably, it is 2 X 1 0 - 6 to 1 5 0 X 1 0 - 6 Ω · ο πι, more preferably 3 x 10 - 6 〜 100 χ 10 -6 Ω .cm. [2] The conductive film 1 of the conductive film is formed by forming a first metal film 11a on one or both sides of the plastic film i 〇φ by a vapor deposition method or a foil bonding method, and evaporating or vapor deposition thereon. And forming a second metal thin film 11b by electroplating, and forming the composite film at least between the first roll having a plurality of hard particles attached to the surface and the second roll having a smooth surface, at least opening to the second metal film 11 A plurality of fine pores 14 on the b side are produced by energizing the second metal thin film lib from one side of the roll to the other side. Since the inclined composition layer 12 is formed between the first metal film 11a and the second metal film 11b, the inclined composition layer φ12' is not formed between the plastic film 10 and the first metal film 11a. necessary. For example, in the conductive film 1 shown in FIG. 2, the first metal thin film Ua made of a metal foil is adhered to the plastic film 10, and the second metal thin film is formed by an evaporation method or an evaporation method and a plating method. After 1 lb, the micro holes 14 are formed and energized. (1) Formation of Metal Films The vapor deposition of metals can be performed by a physical vapor deposition method such as a vacuum deposition method, a sputtering method, or an ion plating method, or a chemical vapor phase such as a plasma CVD method, a thermal CVD method, or a photo CVD method. The vapor deposition method or the like is performed. The second metal thin film 1 1 b is composed of a vapor deposition layer and a plating layer, and the plating layer can be formed by a conventional method in the form of -13-200835045. (2) Formation of fine pores Fig. 8 shows a device for forming fine pores 14 while energizing the composite film crucibles in which the first and second metal thin films 11a and 11b are formed in the plastic film 1 . By passing the composite film 1' wound from the unwinder 55 via a dancer roll 60 and an open roll 61, under a uniform pressing force, a first roll 64 having a plurality of high hardness particles on the surface is passed through the surface. A plurality of fine holes 14 opening at least on the second metal thin film φ lib side are formed between the smooth second rolls 65. At this time, the second metal thin film lib is energized by the electrode rolls 62a and 62b. The obtained electroconductive thin film 1 was taken up on a coiler 56 via a pair of Z rewinding rolls 67, 67 and a dancer roll 68. As shown in Fig. 9, after the pair of electrode rolls 62 & 621) are disposed before the first roll 64, the pair of electrode rolls 63a, 63b are disposed before and after the second roll 65. The power source 70a (70b) is connected to the sleeves 620a, 620b (630a, 630b) supporting the electrode rolls 62a, 62b (63a, 63b), and is capable of applying a voltage to the electrode rolls 62a, 62b (63a, 63b). φ The first roll 64 is a material for depositing a plurality of hard particles (diamond particles) on the surface of a metal roll (diamond roll) by electrodeposition by nickel plating or chrome plating. The second roller 65 is a hard metal roller. The details of the diamond roll are described in Japanese Laid-Open Patent Publication No. 2002-59487. (a) The case where the surface has a metal thin film Fig. 10 is a view showing the formation of fine pores in the composite film crucible having the first and second metal thin films 1 1 a and 1 1 b while being energized. The metal film is formed on the side of the first roll 64, and under uniform pressing, the composite film 1' is passed between the first and second rolls 64, 65 while being electrically connected by the electric-14-200835045 pole rolls 62a, 62b. The second metal film 1 lb is energized. The power source 70a may be either a DC power source or an AC power source. The DC voltage can also be a pulse voltage. The voltage and current density are appropriately set in accordance with the frequency of the high frequency signal. The voltage is preferably 5 V or more, more preferably 8 V or more. If the voltage is lower than 5 V, the increase in resistance is insufficient. The upper limit of the voltage is preferably 30V, more preferably 25V. In the case of using an AC power source, the frequency is preferably 10 Hz to 1 MHz, more preferably 100 to 10000 Hz. The current density is preferably 20 A/m2 or more, more preferably 25 A/m2 or more. The upper limit of the current density φ is preferably 70 A/m 2 , more preferably 50 A/m 2 . The pressing force applied to the composite film 1' by the first and second rolls 64, 65 can be preferably set corresponding to the frequency of the high frequency signal, preferably 70 kfg/mm or more, more preferably It is 80~1000kfg/mm width. The conveying speed of the composite film 1' is preferably from 20 to 100 m / min, more preferably from 25 to 80 m / min. If the speed is less than 2 〇 m / min, the plastic film 10 will have doubts about deterioration. On the other hand, if it exceeds 1 〇 〇 m / min, the increase in resistance will be insufficient. Further, if necessary, the metal film may be formed on the side of the second roll 65 when the composite film is passed between the first and second rolls 64, 65. (b) Case where the metal film is formed on both sides Fig. 11 shows a state in which the composite film 1' having the first and second metal films 11a, 11b on both sides is formed into a fine hole while being energized. In this case, the metal thin film 1 is energized by the pair of electrode rolls 62a and 62b, and the metal thin film lib is energized by the pair of electrode rolls 6 3a and 63b. According to the above-mentioned pressurized energization, the frequency dependence of the superior high-frequency transmission rate -15-200835045 can be obtained. [3] High-frequency component The high-frequency component of the present invention includes the conductive film. Preferred examples of the high frequency component include a high frequency transmission line and a high frequency filter. (1) High-frequency transmission line Fig. 12 shows an example of the high-frequency transmission line of the present invention. This high-frequency transmission line is placed on the upper surface of the dielectric substrate 2 made of plastic, insulating ceramics or the like, and two strip-shaped conductive films 1 〇〇 and 1 平行 are arranged in parallel. The strip-shaped conductive film 100, 100 is formed into a strip shape by a conventional method. Since the electric field is concentrated between the two strip-shaped conductive films 100, 100, high-frequency signals can be efficiently transmitted. In order to obtain superior high-frequency transmission properties, the dielectric substrate 2 preferably has a convex portion 20 between the two strip-shaped conductive films 1 〇〇 and 1 〇〇. The width of each of the conductive films 100 and 100 (h is appropriately set in accordance with the frequency and amplitude of the high-frequency signal, and is preferably 1 to 10 mm, more preferably 1.5 to 7 mm. If the width ch is 1 mm or more, It has sufficient high-frequency signal 0 transmission. In addition, even if the width L exceeds 10 mm, the high-frequency signal transmission property cannot be further improved. The interval d2 between the two strip-shaped conductive films 100 and 100 is preferably 1 to l〇mm ' More preferably, it is 1 · 5 to 7 mm. If the interval d 2 is less than 1 mm, the high-frequency signal transmission property is insufficient. On the other hand, if it exceeds 1 〇 mm, the radiation loss is large. The height of the convex portion 20 h is preferably 1 to 10 mm, more preferably 1.5 to 7 mm. The conductive films 100 and 100 are not limited to be disposed on the same surface of the dielectric substrate, and may be disposed on the opposite side of the cross-sectional dielectric substrate. The inner surface or the orthogonal inner surface of the L-shaped dielectric substrate. -16- 200835045 The high frequency transmission line of the present invention has superior frequency correlation and high frequency transmission rate, and There is no change in time. In addition, because of the higher resistance There is also a case where the terminating resistor can be omitted. Since the conductive film of the present invention has a frequency band having a high frequency transmission rate of 100% or more and a frequency band having a high frequency transmission rate of almost 〇%, it has superior filtering performance. Because of the directionality in the direction of transmission, it also has a hacker prevention function for preventing the entry of signals from the outside. (2) High-frequency filter The high-frequency filter of the present invention has a connection to the above-mentioned HF transmission line. A simple structure of the input terminal and the output terminal. An example of such a high-frequency filter is shown in Fig. 13. The second metal film 11b has a smaller resistance than the first metal film 11a, and is preferably The two metal thin film 1 1 b is provided with the terminal 4. The high frequency filter of the present invention has superior frequency correlation and high frequency transmission rate. (3) Other high frequency components Other high frequency components can be cited: high frequency resonator, High-frequency electrode, high-frequency signal distributor, plane transmission line-waveguide line converter, high-frequency amplification element, antenna (for example, antenna for electronic tag), etc. The present invention may be further described in detail with reference to the following embodiments, but the present invention is not limited by the embodiments. Embodiment 1 Manufacture of strip-shaped conductive film (i) Fabrication of composite film -17- 200835045 PET film for biaxial stretching [thickness: 12 // m, dielectric constant: 3.2 (1MHz), dielectric tangent: 1 · 0% One side of (1MHz)., melting point: 265 °C, glass transition temperature: 75 °C, using a vacuum evaporation method to form a copper layer having a thickness of 0.3 // m, on which an evaporation method is used to form a thickness of 20 nm. Nickel layer. For the test piece obtained by cutting the obtained composite film into 50 cm x 3 mm, the resistance in the longitudinal direction was measured and found to be 8 Ω. (ii) Pressurization and energization using the apparatus shown in Fig. 8 between the first roll (diameter of diamond particles φ 3 μm) 64 and the second roll 65 under a pressure of 100 kgf/mm width At a speed of 30 m/min, the composite film was passed while the nickel layer was brought into contact with the pair of electrode rolls 62a, 62b, and a pulse voltage of 24 V from the power source 70a was applied (both on/off is 30 msec). The current density is 35 A/m2. The average density of the fine pores of the obtained electroconductive film was 5 × 10 4 /cm 2 . The electric resistance film was cut into a 5 〇 cm x 3 mm test piece (measured in the longitudinal direction) to be 100 Ω 〇 (2) high-frequency transmission line fabrication φ. The PET film was formed on the substrate side, and two strip-shaped conductive films were adhered in parallel. A substrate made of a vinyl chloride resin was produced in a parallel line type high-frequency transmission line (length: 50 cm, interval of two-band strip-shaped conductive film: ch: 3 mm) shown in Fig. 2 . Example 2 A strip-shaped conductive film was produced in the same manner as in Example 1 except that a pulse voltage of 15 V (current density of 35 A/m 2 ) was applied. The strip-shaped conductive film has a resistance of 32 Ω, and the average density of the fine pores is 5 x 10 4 /cm 2 . A local frequency transmission line was fabricated in the same manner as in the first embodiment -18-200835045 except that the strip-shaped conductive film was used. Example 3 A strip-shaped conductive film was produced in the same manner as in Example 1 except that a pulse voltage of 18 V (current density of 35 A/m 2 ) was applied. The strip-shaped conductive film has a resistance of 49 Ω, and the average density of the fine pores is 5 x 10 4 /cm 2 . A high frequency transmission line was produced in the same manner as in Example 1 except that the strip-shaped conductive film was used. Example 4 φ A strip-shaped conductive film was produced in the same manner as in Example 1 except that a pulse voltage of 18 V (current density of 35 A/m 2 ) was applied to the composite film at a speed of 60 m/min. The strip-shaped conductive film has a resistance of 18 Ω, and the average density of the micropores is 5 x 10 4 /cm 2 . A high frequency transmission line was fabricated in the same manner as in Example 1 except that the strip-shaped conductive film was used. (Example 5) A strip-shaped conductive film was produced in the same manner as in Example 1 except that an AC voltage of a frequency of 5000 Hz and a voltage of 10 V (current density of 45 A/m2) was applied and cut to a width of 5 m. The strip-shaped conductive film has a resistance of 52 Ω, and the average density of the fine pores is 5 x 104 / cm 2 . A high frequency transmission line was fabricated in the same manner as in Example 1 except that the strip-shaped conductive film was used. (Example 6) A strip-shaped conductive film was produced in the same manner as in Example 1 except that an alternating voltage of a frequency of 5000 Hz and 10 V (current density of 30 A/m 2 ) was applied and cut to a width of 5 mm. The strip-shaped conductive film has a resistance of 47 Ω, and the average density of the fine pores is 5 x 104 pieces/cm2. A high frequency transmission -19-200835045 transmission line was produced in the same manner as in the first embodiment except that the strip-shaped conductive film was used. Example 7 A nickel layer having a thickness of 50 nm was formed on one surface of a PET film by a vacuum evaporation method to form a copper layer having a thickness of 〇.3 #m. The obtained composite film was cut into a test piece of 5Ocmx5mm (measured in the longitudinal direction) to be 8 Ω. Under a pressure of 500 kfg/mm, the composite film was passed through a pair of rolls 64 and 65 while applying a pulse voltage of 10 V (current density: 30 A/m 2 ) to a width of 5 mm. A strip-shaped conductive film was produced in the same manner as in the case of Example 1 of φ. The strip-shaped conductive film has a resistance of 16 Ω, and the average density of the fine pores is 5×10 4 /cm 2 . A high frequency transmission line was fabricated in the same manner as in Example 1 except that the strip-shaped conductive film was used. Example 8 A composite film was produced in the same manner as in Example 7 except that a biaxially oriented PET film having a thickness of 16/zm was used, and the thickness of the copper layer was changed to 0.5 / z m. The composite film was cut into a 50 cm x 5 mm test piece and the electric resistance was I 8 Ω. The composite film was cut by forming the same fine pores as in Example 7, and the obtained strip-shaped conductive film had a resistance of 17 Ω and an average density of fine pores of 5 x 104 / cm 2 . A high frequency transmission line was fabricated in the same manner as in Example 1 except that the strip-shaped conductive film was used. Example 9 Polyphenylene sulfide film was biaxially stretched (thickness: 12/zm, dielectric constant: 3 (1 MHz), dielectric tangent: 〇. 〇〇2 (1 Μ Η z ), melting point: 2 8 On one side of 5 ° C, glass transition temperature: 90 ° C, a nickel layer having a thickness of 50 nm was formed by vacuum evaporation to form a copper layer having a thickness of 〇2/m. The obtained composite -20-200835045 film was cut into 10 Ω of the test piece obtained after the test piece of 50 cm x 3 mm. The composite film was cut by the same manner as in Example 7, and the obtained strip-shaped conductive film had an electric resistance of 16 Ω pores and an average density of 5 x 10 4 /cm 2 . A high frequency transmission line was produced in the same manner as in Example 1 except that this strip-shaped conduction was used. Comparative Example 1 A rolled copper foil having a thickness of 1 2 // m was adhered to a biaxial polyimide melamine thinness: 25/ Zm, dielectric constant: 3.3 (1 ΜΗζ), dielectric tangent: φ (1MHz), glass transition temperature: 280 ° C or more] one side. A pulse film of 18 V (current density of 35 A/m2) was applied to the film except that the film was formed in the same manner as in Example 1. There is no change in resistance before and after the energization. A transmission line was produced in the same manner as in Example 1 except that a conductive film was used. Comparative Example 2 A strip-shaped conductive film was produced in the same manner as in Comparative Example 1, except that a pulse voltage of 20 V (current density of 40 A/m 2 ) was applied. There is no change in resistance before and after power-on. A high-frequency transmission line was produced in the same manner as in Example 1 except that the strip-shaped conduction was used. Comparative Example 3 A tape was produced in the same manner as in Comparative Example 1 except that a pulse voltage of 25 V (current density of 50 A/m 2 ) was applied. Conductive film. There is no change in resistance before and after power-on. In the same manner as in Example 1, except that the strip-shaped conductive material was used, the high-frequency transmission line was produced. Comparative Example 4 The electric resistance was fine, and the fine film was made of a film [thickness of 0.0099 in addition to the laminated conductive thin strip-shaped high-frequency transmission. , in the film of pressurized film. In addition, pressurize the film to the road. -21· 200835045 On one side of the polyimide film, a vacuum layer was used to form a copper layer having a thickness of 3.0 #m, and a nickel layer of 10#111 was formed thereon. The obtained composite film was cut by forming the same fine pores as in Example 7, and the obtained strip-shaped conductive film had a resistance of 0.1 Ω, and the average density of the fine pores was 5 × 10 4 /cm 2 . A high frequency transmission line was fabricated in the same manner as in Example 1 except that the strip-shaped conductive film was used. Comparative Example 5 A strip-shaped conductive film was produced in the same manner as in Example 7 except that no fine pores were formed. The strip-shaped conductive film has a resistance of 8 Ω. A high frequency transmission line was fabricated in the same manner as in Example 1 except that the strip-shaped conductive film was used. Comparative Example 6 A belt was produced in the same manner as in Example 7 except that the micropores were formed at the same time as the passing of the pair of rolls 64 and 65 at a speed of 30 m/min under a pressure of 500 kfg/mm. Conductive film. The strip-shaped conductive film has a resistance of 13 Ω, and the average density of the fine pores is 5 x 10 4 /cm 2 . ^ A high frequency transmission line was fabricated in the same manner as in Example 1 except that this strip-shaped conductive film was used. The production conditions and physical properties of the strip-shaped guide films of Examples 1 to 9 and Comparative Examples 1 to 6 are shown in Table 1: -22-200835045 [Table 1]
例No. 實施例1 實施例2 實施例3 實施例4 複合薄膜 塑膠薄膜 材料 PET PET PET PET 厚度(μπι) 12 12 12 12 第一金屬薄膜 材料 Cu Cu Cu Cu 形態 蒸鑛 蒸鍍 蒸鍍 蒸鍍 厚度(//m) 0.3 0.3 0.3 0.3 第二金屬薄膜 材料 Ni Ni Ni Ni 形態 蒸鍍 蒸鍍 蒸鏟 蒸鍍 厚度("m) 0.02 0.02 0.02 0.02 電阻(Ω) 8 8 8 8 電阻率(Ω · Cm)⑴ 1.5xl0'6 LSxlO'6 1.5xl0'6 1.5xl0·6 微細孔形成條件 壓力(kgf/mm幅寬） 100 100 100 100 電源 直流(3) 直流(3) 直流⑶ 直流⑴ 電壓(V) 24 15 18 18 電流密度(A/m2) 35 35 35 35 頻率(Hz) — — — — 薄膜之通過速度(m/分鐘） 30 30 30 60 帶狀導電薄膜 寬度(mm) 3 3 3 3 電阻(Ω) 100 32 49 18 電阻率(Ω · cm)⑴ 19.2xl0'6 6·1χ10·6 9·4χ10·6 3.5xl06 微細孔之平均密度(個/cm2) 5xl04 5xl04 5xl04 5xl04 高頻傳送線路 高頻傳送率測定結果 第17圖 第18圖 第19圖 第20圖 -23- 200835045 【表1】（接續）Example No. Example 1 Example 2 Example 3 Example 4 Composite film Plastic film material PET PET PET PET Thickness (μπι) 12 12 12 12 First metal film material Cu Cu Cu Cu Form steam evaporation vapor deposition vapor deposition Thickness (//m) 0.3 0.3 0.3 0.3 Second metal film material Ni Ni Ni Ni Forming vapor deposition vapor deposition steaming shovel evaporation thickness ("m) 0.02 0.02 0.02 0.02 resistance (Ω) 8 8 8 8 resistivity (Ω · Cm)(1) 1.5xl0'6 LSxlO'6 1.5xl0'6 1.5xl0·6 Micropore forming condition pressure (kgf/mm width) 100 100 100 100 Power supply DC (3) DC (3) DC (3) DC (1) Voltage ( V) 24 15 18 18 Current density (A/m2) 35 35 35 35 Frequency (Hz) — — — — Film passing speed (m/min) 30 30 30 60 Strip conductive film width (mm) 3 3 3 3 Resistance (Ω) 100 32 49 18 Resistivity (Ω · cm) (1) 19.2xl0'6 6·1χ10·6 9·4χ10·6 3.5xl06 Average density of micropores (pieces/cm2) 5xl04 5xl04 5xl04 5xl04 High frequency transmission line High-frequency transmission rate measurement result Figure 17 Figure 18 Figure 19 Figure 20 Figure -23- 200835045 [Table 1] (Continued)
M No. 實施例5 實施例6 實施例7 實施例8 複合薄膜 塑膠薄膜 材料 PET PET PET PET 厚度Um) 12 12 12 16 第一金屬薄膜 材料 Cu Cu Cu Cu 形態 蒸鍍 蒸鍍 蒸鍍 蒸鍍 厚度("m) 0.3 0.3 0.3 0.5 第二金屬薄膜 材料 Ni Ni Ni Ni 形態 蒸鍍 蒸鍍 蒸鍍 蒸鍍 厚度(/zm) 0.02 0.02 0.05 0.05 電阻(Ω) 5 5 8 8 電阻率(Ω .cm)⑴ Ι.όχΙΟ*6 Ι.όχΙΟ·6 2·8χ10·6 4·4χ10·6 微細孔形成條件 壓力(kgf/mm幅寬） 100 100 500 500 電源 交流 交流 直流⑴ 直流⑴ 電壓(V) 10 10 10 10 電流密度(A/m2) 45 30 30 30 頻率(Hz) 5000 5000 — — 薄膜之通過速度(m/分鐘） 30 30 30 60 帶狀導電薄膜 寬度(mm) 5 5 5 5 電阻(Ω) 52 47 16 17 電阻率(Ω · cm)⑵ 16.6XKT6 15X10·6 5.6xl0·6 9.4X10*6 微細孔之平均密度(個/cm2) 5xl04 5xl04 SxlO4 5xl04 高頻傳送線路 高頻傳送率測定結果 第21，22圖 第23,24圖 第25圖 第26圖 -24- 200835045 【表1】（接續）M No. Example 5 Example 6 Example 7 Example 8 Composite film Plastic film material PET PET PET PET Thickness Um) 12 12 12 16 First metal film material Cu Cu Cu Cu Form evaporation vapor deposition evaporation evaporation thickness ("m) 0.3 0.3 0.3 0.5 Second Metal Thin Film Material Ni Ni Ni Ni Form Evaporation Evaporation Evaporation Evaporation Thickness (/zm) 0.02 0.02 0.05 0.05 Resistance (Ω) 5 5 8 8 Resistivity (Ω .cm (1) Ι.όχΙΟ*6 Ι.όχΙΟ·6 2·8χ10·6 4·4χ10·6 Micropore formation condition pressure (kgf/mm width) 100 100 500 500 Power supply AC/DC (1) DC (1) Voltage (V) 10 10 10 10 Current density (A/m2) 45 30 30 30 Frequency (Hz) 5000 5000 — — Film passing speed (m/min) 30 30 30 60 Strip conductive film width (mm) 5 5 5 5 Resistance (Ω ) 52 47 16 17 Resistivity (Ω · cm) (2) 16.6XKT6 15X10·6 5.6xl0·6 9.4X10*6 Average density of micropores (units/cm2) 5xl04 5xl04 SxlO4 5xl04 High-frequency transmission line high-frequency transmission rate measurement result 21, 22, 23, 24, 25, 26, 26-24, 200835045 [Table 1]
例No. 實施例9 比較例1 比較例2 比較例3 複合薄膜 塑膠薄膜 材料 PPS PI PI PI 厚度(㈣ 12 25 25 25 第一金屬薄膜 材料 Ni Cu Cu Cu 形態 蒸鍍 箔 箔 箔 厚度(//m) 0.05 12 12 12 第二金屬薄膜 材料 Cu — — — 形態 蒸鍍 — — — 厚度(/zm) 0.2 — — — 電阻(Ω) 10 — — — 電阻率(Ω · cm)⑴ 2.5X10*6 — — — 微細孔形成條件 壓力(kgf/mm幅寬) 500 100 100 100 電源 直流⑴ 直流⑴ 直流⑴ 直流⑴ 電壓(V) 10 18 20 25 電流密度(A/m2) 30 35 40 50 頻率(Hz) — — — — 薄膜之通過速度(m/分鐘） 30 30 30 30 帶狀導電薄膜 寬度(mm) 5 3 3 3 電阻(Ω) 16 — — — 電阻率(Ω · cm)⑵ 4xl0·6 — — — 微細孔之平均密度(個/cm2) 5xl04 5xl04 5xl04 5xl04 尚頻傳送線路 高頻傳送率測定結果 第27, 28圖 第29圖 第30圖 第31圖 •25- 200835045 【表1】（接續）Example No. Example 9 Comparative Example 1 Comparative Example 2 Comparative Example 3 Composite film plastic film material PPS PI PI PI Thickness ((4) 12 25 25 25 First metal film material Ni Cu Cu Cu Formed vapor-deposited foil foil thickness (// m) 0.05 12 12 12 Second metal film material Cu — — — Formal evaporation — — — Thickness (/zm) 0.2 — — — Resistance (Ω) 10 — — — Resistivity (Ω · cm) (1) 2.5X10*6 — — — Micropore forming condition pressure (kgf/mm width) 500 100 100 100 Power supply DC (1) DC (1) DC (1) DC (1) Voltage (V) 10 18 20 25 Current density (A/m2) 30 35 40 50 Frequency (Hz ) — — — — Film passing speed (m/min) 30 30 30 30 Strip conductive film width (mm) 5 3 3 3 Resistance (Ω) 16 — — — Resistivity (Ω · cm) (2) 4xl0·6 — — — Average density of micropores (units/cm2) 5xl04 5xl04 5xl04 5xl04 Frequency transmission line measurement results of high frequency transmission rate 27, 28, Fig. 29, Fig. 30, Fig. 31 • 25- 200835045 [Table 1] (Continuation) )
例Να 比較例4 比較例5 比較例6 複合薄膜 塑膠薄膜 材料 PI PET PET 厚度(/zm) 25 12 12 第一金屬薄膜 材料 Cu Cu Cu 形態 蒸鍍 蒸鍍 蒸鍍 厚度(//m) 3.0 0.3 0.3 第二金屬薄膜 材料 Ni Ni Ni 形態 蒸鍍 蒸鍍 蒸鍍 厚度(//m) 10 0.05 0.05 電阻(Ω) — •8 8 電阻率(Ω · cm)⑴ — 2.8xl0'6 2.8xl0·6 微細孔形成條件 壓力(kgf/mm幅寬） 500 一 500 電源 直流(3) 一 _ (4) 電壓(V) 10 一 _ (4) 電流密度(A/m2) 30 — —(4) 頻率(Hz) — — _ (4) 薄膜之通過速度(m/分鐘） 30 — 30 帶狀導電薄膜 寬度(mm) 5 5 5 電阻(Ω) 0.1 8 13 電阻率(Ω · cm)(2) 1.3xl0·6 2.8xl0'6 4·6χ10·6 微細孔之平均密度(個/cm2) 5xl04 — 5χ104 高頻傳送線路 高頻傳送率測定結果 第32圖 第33圖 第34圖 -26- 200835045 註：（1)由第一及第二之金屬薄膜所構成的積層金屬之電 阻率。積層金屬之長度爲50 cm、寬度爲3mm (實 施例1〜4)及5mm(實施例5〜9、比較例5、6)。 (2 )由第一及第二之金屬薄膜及其間之傾斜組成層 所構成的積層金屬之電阻率。積層金屬之長度 爲50cm、寬度爲3mm(實施例1〜4)及5 mm (實 施例5〜9、比較例4〜6 )。 (3 )施加脈衝電壓（開/關均爲3 0毫秒）。 0 ( 4 )微細孔之形成時不通電。 利用以下之方法以測定實施例1〜9及比較例1〜6所得 的高頻傳送線路之高頻傳送率： (a )高頻振盪器之雜波特性測定 (i )雜波特性測定用高頻傳送線路之製作 於雙軸拉伸PET薄膜之一面，利用真空蒸鍍法以形成厚 度0.3 # m之銅層，縱向切割成5mm寬度。使ΡΈΤ薄膜位 於下方，以3mm之間隔d2而將二條長度50cm之帶狀銅/PET φ 薄膜平行黏著於氯乙烯樹脂製之基板，進行相同於實施例 1之方式而製作平行線路型的雜波特性測定用高頻傳送線 路。 (ii)雜波特性測定 如第14圖所示，透過電纜70及鱷口夾7，將高頻振盪 器5連接於雜波特性測定用高頻傳送線路的積層膜1 ” 、 1”之一端，另一端連接高頻接收器6。爲了整合阻抗、精 確測定高頻傳送率，緊接於高頻振盪器5之後及緊接於接 收器6之後設置整合器8。如第15圖所示，高頻振盪器5 •27- 200835045 係具備：電壓控制振盪器（VCO ) 5 1、使對應於進行傳送 的信號頻率而切換之方式所形成的3個高頻振盪模組52、 52’ 、52”及2個高頻放大器53、53’ 。高頻振盪器5能 夠傳送 100 〜200MHz、260 〜5 50MHz 及 600 〜1 050MHz 之範 圍的信號。從振盪器5傳送100、200、300、500、700及 1000MHz之信號，探討雜波特性。將結果顯示於表2。此 高頻振盪器5之高諧波發生爲少的、高諧波以外之雜波則 Μ 〇 \\ 【表2】 基本波 第二高諧波 第三高諧波 第四高諧波 高諧波 之頻率 頻率 強度 頻率 強度 頻Φ 強度 以外之 (MHz) (MHz) _ (MHz) _ (MHz) _ 雜波 100 200 -35 300 -45 400 -60 nil /\\\ 200 400 -30 600 -35 800 -70 Μ j\\\ 300 600 -27 900 -33 1200 -35 Αχττ. ν\\\η y\\\ 500 1000 -33 1500 -25 2000 -35 Μ j\\\ 700 1400 -35 2100 -33 — 一 Μ /\\\ 1000 2000 -40 — — — — Μ /\\\ (b )傳送係數之設定 利用電纜7 0 (參照第14圖）以連接振盪器5與接收器 6,以1.0V之輸出振幅，從120MHz至1 050MHz，以2〜6MHz 間隔提高頻率的同時’從振盪器5傳送信號。針對如第16 (a)圖所示，使來自振盪器5之輸出端子50、50之信號 從（+ )側輸出之方式來傳送之情形（信號圖案1 ) ’與 如第1 6 ( b )圖所示，使來自振盪器5之輸出端子5 0、5 0 -28- .200835045 之信號從（-）側輸出之方式來傳送之情形（信號圖案2 : 相對於信號圖案1 ’相位偏移1 /2波長）之二者而求出輸入 振幅。依照式：傳送係數=輸入振幅（V ) /輸出振幅（V )， 求出各頻率之傳送係數’針對各個信號圖案1及2而作成 頻率-傳送係數曲線。 (c )高頻傳送率之測定 與上述同樣之方式，將振盪器5及接收器6連接於實施 例1〜9及比較例1〜6製作的高頻傳送線路，於緊接於振 φ 盪器5之後及緊接於接收器6之前設置整合器8 (參照第 14圖）。利用1.0V之輸出振幅（V)，從120MHz至1 050MHz， 以2〜6MHz間隔來提高頻率的同時，從振盪器5傳送信號 (信號圖案1及2)，求出輸入振幅（V)。使用由上述頻 率-傳送係數曲線所求得的傳送係數，依照式··高頻傳送率 (% )=輸入振幅（V ) / (輸出振幅（V ) X傳送係數）χίΟΟ 而算出各測定頻率之高頻傳送率（％)。將頻率與高頻傳 送率之關係予以作圖後的結果顯示於第17〜34圖。 φ 由第17〜20圖，於實施例1〜4的高頻傳送線路之情 形，針對信號圖案1，於約略320〜350MHz及760〜820MHz 之帶域，高頻傳送率爲100%以上；於約略600〜700MHz 之廣帶域，高頻傳送率爲〇%，具有頻率相關性。針對信 號圖案2，於約略140〜180MHz、3 80〜430MHz及620〜 7 30MHz之帶域，高頻傳送率爲100%以上，具優越之傳送 性。根據信號圖案之不同，高頻傳送率高的帶域不同。 由第2 1〜24圖，於實施例5及6的高頻傳送線路之情 形，針對信號圖案1，於約略650〜700MHz之帶域，高頻 -29- 200835045 傳送率爲100%以上；於約略400〜5 00MHz之廣帶域’高 頻傳送率爲0%。針對信號圖案2’於約略320〜360MHz 之帶域，高頻傳送率爲1 0 0 %以上；於約略6 0 0〜7 0 0 Μ Η z 及87 0〜97 0MHz之廣帶域，高頻傳送率爲〇% °針對信號 圖案1及2，具有高頻傳送率之頻率相關性。 由第2 5圖，於實施例7的高頻傳送線路之情形，針對 信號圖案1，於約略140〜220MHz、370〜420MHz及660〜 710MHz之帶域，高頻傳送率爲1〇〇%以上；於750〜800MHz ^ 之帶域，高頻傳送率爲0%。尤其於177MHz，顯示770% 之傳送率。針對信號圖案2，於約略150〜230MHz、3 30〜 350MHz及730〜820MHz之帶域，高頻傳送率爲100%以 上。針對信號圖案2，得知由於高頻傳送率並無〇 %之帶 域，並未觀察到帶域去除性，根據信號圖案之差異，可以 得到整流作用。 由第26圖，實施例8的高頻傳送線路係針對信號圖案 1，於約略 120 〜460MHz、750 〜84 0 MHz 及 9 00 〜1010MHz 0 之帶域，高頻傳送率爲1 00 %以上，具優越之傳送性。針 對信號圖案2，於約略190〜310MHz、600〜660MHz、770 〜800MHz及970〜1010MHz之帶域，高頻傳送率爲100% 以上；於690〜7 30MHz之帶域，高頻傳送率爲〇%。針對 信號圖案1 ’並未觀察到帶域去除性，根據信號圖案之差 異，可以得到整流作用。 由第2 7圖及第2 8圖，於實施例9的高頻傳送線路之情 形’針kMs號圖案1’於約略130〜180MHz、370〜410MHz 及970〜1010MHz之帶域，高頻傳送率爲ι〇〇%以上；於43〇 -30- 200835045 〜5 30MHz及7 50〜7 80MHz之帶域，高頻傳送率爲〇%。針 對信號圖案2，於約略130〜180MHz、240〜300MHz、320 〜3 60MHz及760〜7 80MHz之帶域，高頻傳送率爲100%以 上；於640〜7 20MHz之帶域，高頻傳送率爲0%。尤其於 344MHz，顯示2715%之傳送率。根據信號圖案之差異，高 頻所未傳送之帶域及高頻傳送率高的帶域不同。 針對於此，於比較例1〜3 (參照第29〜3 1圖）的高頻 傳送線路之情形，由於使用銅箔，相較於實施例1〜9，高 φ 頻傳送率爲100%以上之帶域及高頻傳送率爲0%之帶域 爲狹窄的，高頻傳送率之頻率相關性爲低的。 由第32圖可明確得知，於比較例4的高頻傳送線路之 情形，因爲導電薄膜之鎳層超過70nm，銅層超過1 /z m， 高頻傳送率爲〇 %之帶域並未被發現。 由第3 3圖可明確得知，於比較例5的高頻傳送線路之 情形，針對信號圖案1，於700〜7 30MHz之帶域，高頻傳 送率爲0%。但是，因爲此傳送線路之導電薄膜並未加壓 $ 通電，高頻傳送率爲0%之帶域較實施例1〜9更爲狹窄 的。另外，傳送率之最大値爲580.1%，較加壓通電之實施 例7爲低。 由第34圖可明確得知，於比較例6的高頻傳送線路之 情形，針對信號圖案1，於430〜500MHz及770〜770MHz 之帶域，高頻傳送率爲0% ;針對信號圖案2，於610〜 650MHz及900〜930MHz之帶域，高頻傳送率爲〇%。但 是，因爲此導電薄膜並未加壓通電，傳送率之最大値爲 578.4%，較加壓通電後之實施例7爲低。 -31- 200835045 【圖式簡單說明】 第1 ( a )圖係顯示根據本發明之一實施例所得的導電薄 膜之剖面圖。 第1 ( b )圖係槪略顯示第1 ( a )圖的A部分之放大剖 面圖。 第1 ( c )圖係槪略顯示第1 ( b )圖的A ’部分之放大剖 面圖。 第1 ( d )圖係槪略顯示第1 ( b )圖的A”部分之放大剖 • 面圖。 第2( a )圖係顯示根據本發明之另一實施例所得的導電 薄膜之剖面圖。 第2 ( b )圖係槪略顯示第2 ( a )圖的B部分之放大剖 面圖。 第3 ( a )圖係顯示根據本發明之再另一實施例所得的導 電薄膜之剖面圖。 第3 ( b )圖係槪略顯示第3 ( a )圖的C部分之放大剖 φ 面圖。 第4( a )圖係顯示根據本發明之再另一實施例所得的導 電薄膜之剖面圖。 第4 ( b )圖係槪略顯示第4 ( a )圖的D部分之放大剖 面圖。 第5圖係顯示根據本發明之再另一實施例所得的導電薄 膜之斜視圖。 第6圖係顯示根據本發明之再另一實施例所得的導電薄 膜之斜視圖。 -32- 200835045 第7圖係顯示根據本發明之再另一實施例所得的導電薄 膜之斜視圖。 第8圖係顯示於複合薄膜中形成微細孔的同時，進行通 電之裝置一例的槪略圖。 第9圖係第8圖的裝置之部分放大斜視圖。 第1 0圖係於第8圖的裝置中，顯示於一面具有金屬薄 膜之複合薄膜中形成微細孔的同時，進行通電之樣子的部 分放大剖面圖。 φ 第11圖係於第8圖的裝置中，顯示於兩面具有金屬薄 Μ之複合薄膜中形成微細孔的同時，進行通電之樣子的部 分放大剖面圖。 第1 2圖係顯示根據本發明之一實施例所得的高頻傳送 線路之斜視圖。 第1 3圖係顯示根據本發明之一實施例所得的高頻濾波 器之斜視圖。 第1 4圖係顯示將振盪器及接收器連接於高頻傳送線路 $ 的狀態之槪略圖。 第1 5圖係槪略顯示使用於高頻傳送率測定的振盪器構 造之電路圖。 第1 6 ( a )圖係顯示使來自振盪器之信號從（+ )側得 以輸出之方式來傳送之情形的信號圖案之槪略圖。 第1 6 ( b )圖係顯示使來自振盪器之信號從（一）側得 以輸出之方式來傳送之情形的信號圖案之槪略圖。 第1 7圖係顯示實施例1之高頻傳送線路中之頻率與高 頻傳送率的關係之作圖。 -33- 200835045 第1 8圖係顯示實施例2之高頻傳送線路中之頻率與高 頻傳送率的關係之作圖。 第19圖係顯示實施例3之高頻傳送線路中之頻率與高 頻傳送率的關係之作圖。 第20圖係顯示實施例4之高頻傳送線路中之頻率與高 頻傳送率的關係之作圖。 第21圖係顯示實施例5之高頻傳送線路中之頻率與高 頻傳送率的關係之作圖。 第22圖係第21圖之放大圖。 ^ 第23圖係顯示實施例6之高頻傳送線路中之頻率與高 頻傳送率的關係之作圖。 第24圖係第23圖之放大圖。 第2 5圖係顯示實施例7之高頻傳送線路中之頻率與高 頻傳送率的關係之作圖。 第26圖係顯不實施例8之高頻傳送線路中之頻率與局 頻傳送率的關係之作圖。 第27圖係顯示實施例9之高頻傳送線路中之頻率與高 ® 頻傳送率的關係之作圖。 第28圖係第27圖之放大圖。 第2 9圖係顯示比較例1之高頻傳送線路中之頻率與高 頻傳送率的關係之作圖。 第3 0圖係顯示比較例2之高頻傳送線路中之頻率與高 頻傳送率的關係之作圖。 第31圖係顯示比較例3之高頻傳送線路中之頻率與高 頻傳送率的關係之作圖。 -34 - 200835045 第32圖係顯示比較例4之高頻傳送線路中之頻率與高 頻傳送率的關係之作圖。 第33圖係顯不比較例5之高頻傳送線路中之頻率與高 頻傳送率的關係之作圖。 第34圖係顯示比較例6之高頻傳送線路中之頻率與高 頻傳送率的關係之作圖。 第35圖係顯示習知之高頻傳送線路之例的斜視圖。 第36圖係顯示習知之高頻傳送線路之另一例的斜視圖。 第37圖係顯示習知之高頰傳送線路之再另一例的斜視 弟3 8圖係顯示習知之高頻傳送線路之再另一例的斜視 圖。 第39圖係顯示習知之高頻傳送線路之再另一例的斜視 圖。 第4 0圖係顯示習知之咼頻傳送線路之再另一例的斜視 圖。Example 比较α Comparative Example 4 Comparative Example 5 Comparative Example 6 Composite film plastic film material PI PET PET Thickness (/zm) 25 12 12 First metal film material Cu Cu Cu Form evaporation vapor deposition evaporation thickness (//m) 3.0 0.3 0.3 Second metal film material Ni Ni Ni Forming vapor deposition evaporation thickness (//m) 10 0.05 0.05 Resistance (Ω) — • 8 8 Resistivity (Ω · cm) (1) — 2.8xl0'6 2.8xl0·6 Micro-pore forming conditional pressure (kgf/mm width) 500-500 Power supply DC (3) One _ (4) Voltage (V) 10 _ (4) Current density (A/m2) 30 — — (4) Frequency ( Hz) — — _ (4) Film passing speed (m/min) 30 — 30 Strip conductive film width (mm) 5 5 5 Resistance (Ω) 0.1 8 13 Resistivity (Ω · cm) (2) 1.3xl0 ·6 2.8xl0'6 4·6χ10·6 Average density of micropores (pieces/cm2) 5xl04 — 5χ104 High-frequency transmission line high-frequency transmission rate measurement result 32nd picture 33rd picture 34th -26- 200835045 Note: ( 1) The resistivity of the laminated metal composed of the first and second metal thin films. The laminated metal had a length of 50 cm, a width of 3 mm (Examples 1 to 4) and 5 mm (Examples 5 to 9 and Comparative Examples 5 and 6). (2) The resistivity of the laminated metal composed of the first and second metal thin films and the inclined constituent layers therebetween. The laminated metal had a length of 50 cm, a width of 3 mm (Examples 1 to 4), and 5 mm (Examples 5 to 9 and Comparative Examples 4 to 6). (3) Apply a pulse voltage (on/off is 30 ms). 0 (4) No electricity is supplied when the micro holes are formed. The high-frequency transmission rates of the high-frequency transmission lines obtained in Examples 1 to 9 and Comparative Examples 1 to 6 were measured by the following methods: (a) Measurement of the clutter characteristics of the high-frequency oscillator (i) Measurement of the clutter characteristics A high-frequency transmission line was fabricated on one side of the biaxially stretched PET film, and a copper layer having a thickness of 0.3 m was formed by vacuum evaporation to be cut into a width of 5 mm in the longitudinal direction. The tantalum film was placed underneath, and two strips of copper/PET φ film having a length of 50 cm were adhered to the substrate made of vinyl chloride resin in parallel at an interval d2 of 3 mm, and a parallel line type of clutter was produced in the same manner as in Example 1. High-frequency transmission line for characteristic measurement. (ii) Measurement of the clutter characteristics As shown in Fig. 14, the high-frequency oscillator 5 is connected to the laminated film 1" and "1" of the high-frequency transmission line for detecting the clutter characteristics through the cable 70 and the crocodile clip 7. One end and the other end are connected to the high frequency receiver 6. In order to integrate the impedance and accurately measure the high frequency transmission rate, the integrator 8 is disposed immediately after the high frequency oscillator 5 and immediately after the receiver 6. As shown in Fig. 15, the high-frequency oscillator 5 • 27- 200835045 includes a voltage-controlled oscillator (VCO) 5 1 and three high-frequency oscillation modes formed by switching the frequency of the signal to be transmitted. Groups 52, 52', 52" and two high frequency amplifiers 53, 53'. The high frequency oscillator 5 is capable of transmitting signals in the range of 100 to 200 MHz, 260 to 5 50 MHz, and 600 to 1 050 MHz. The signals of 200, 300, 500, 700, and 1000 MHz are used to investigate the clutter characteristics. The results are shown in Table 2. The high harmonics of the high frequency oscillator 5 occur as few, and the harmonics other than the high harmonics are Μ 〇\\ [Table 2] Basic wave second harmonic high third harmonic fourth harmonic high harmonic frequency frequency intensity frequency intensity frequency Φ other than intensity (MHz) (MHz) _ (MHz) _ ( MHz) _ Clutter 100 200 -35 300 -45 400 -60 nil /\\\ 200 400 -30 600 -35 800 -70 Μ j\\\ 300 600 -27 900 -33 1200 -35 Αχττ. ν\\ \η y\\\ 500 1000 -33 1500 -25 2000 -35 Μ j\\\ 700 1400 -35 2100 -33 — one Μ /\\\ 1000 2000 -40 — — — — Μ /\\\ (b Transfer coefficient Set the cable 70 (refer to Fig. 14) to connect the oscillator 5 and the receiver 6, and transmit the signal from the oscillator 5 while increasing the frequency at intervals of 2 to 6 MHz with an output amplitude of 1.0 V from 120 MHz to 1 050 MHz. For the case where the signal from the output terminals 50, 50 of the oscillator 5 is outputted from the (+) side as shown in Fig. 16(a), the case (signal pattern 1) 'as with the first 16 (b) In the figure, the signal from the output terminal 5 0, 5 0 -28- .200835045 of the oscillator 5 is transmitted from the (-) side (signal pattern 2: phase shift relative to the signal pattern 1 ') The input amplitude is obtained by shifting both of the 1 / 2 wavelengths. According to the equation: transmission coefficient = input amplitude (V) / output amplitude (V), the transmission coefficient of each frequency is obtained for each signal pattern 1 and 2 Frequency-transmission coefficient curve (c) Measurement of high-frequency transmission rate In the same manner as described above, the oscillator 5 and the receiver 6 are connected to the high-frequency transmission lines produced in the first to the ninth and the first to sixth embodiments. Immediately after the oscillating device 5 and immediately before the receiver 6, the integrator 8 is set (refer to 14 picture). The input amplitude (V) is obtained from the oscillator 5 by using a 1.0 V output amplitude (V) from 120 MHz to 1 050 MHz at a frequency of 2 to 6 MHz to increase the frequency and transmitting signals (signal patterns 1 and 2) from the oscillator 5. Using the transmission coefficient obtained by the above-described frequency-transmission coefficient curve, each measurement frequency is calculated according to the formula: high-frequency transmission rate (%) = input amplitude (V) / (output amplitude (V) X transmission coefficient) χίΟΟ High frequency transmission rate (%). The results obtained by plotting the relationship between the frequency and the high-frequency transmission rate are shown in Figures 17 to 34. φ from the 17th to 20th, in the case of the high frequency transmission lines of the first to fourth embodiments, for the signal pattern 1, in the band of approximately 320 to 350 MHz and 760 to 820 MHz, the high frequency transmission rate is 100% or more; A wide band of about 600 to 700 MHz, with a high frequency transmission rate of 〇%, has frequency dependence. For the signal pattern 2, in the range of approximately 140 to 180 MHz, 380 to 430 MHz, and 620 to 7 30 MHz, the high frequency transmission rate is 100% or more, and the transmission property is superior. Depending on the signal pattern, the bands with high HF transmission rates are different. From the 2nd to 24th diagrams, in the case of the high frequency transmission lines of the fifth and sixth embodiments, for the signal pattern 1, in the band of about 650 to 700 MHz, the transmission rate of the high frequency -29-200835045 is 100% or more; The wide band domain of about 400 to 500 MHz has a high frequency transmission rate of 0%. For the signal pattern 2' in the band of about 320~360MHz, the high frequency transmission rate is more than 100%; in the wide band of about 60 to 7 0 0 Μ Η z and 87 0~97 0MHz, the high frequency The transmission rate 〇% ° has a frequency dependence of the high frequency transmission rate for the signal patterns 1 and 2. According to the fifth aspect, in the case of the high-frequency transmission line of the seventh embodiment, for the signal pattern 1, in the band of about 140 to 220 MHz, 370 to 420 MHz, and 660 to 710 MHz, the high-frequency transmission rate is 1% or more. In the band of 750~800MHz ^, the high frequency transmission rate is 0%. Especially at 177MHz, the transmission rate of 770% is displayed. For the signal pattern 2, the frequency of the high frequency transmission is 100% or more in the range of approximately 150 to 230 MHz, 3 30 to 350 MHz, and 730 to 820 MHz. With respect to the signal pattern 2, it was found that the band removal property was not observed because the high-frequency transmission rate was not 〇%, and the rectification effect was obtained depending on the difference in the signal pattern. According to Fig. 26, the high-frequency transmission line of the eighth embodiment is directed to the signal pattern 1, in a band of about 120 to 460 MHz, 750 to 84 0 MHz, and 900 to 1010 MHz, and the high-frequency transmission rate is 100% or more. Excellent transferability. For the signal pattern 2, in the range of approximately 190 to 310 MHz, 600 to 660 MHz, 770 to 800 MHz, and 970 to 1010 MHz, the high frequency transmission rate is 100% or more; in the band of 690 to 7 30 MHz, the high frequency transmission rate is 〇 %. No band removability is observed for the signal pattern 1', and rectification can be obtained depending on the difference in signal pattern. In the case of the high frequency transmission line of the ninth embodiment, the case of the high frequency transmission line of the ninth embodiment is shown in the range of approximately 130 to 180 MHz, 370 to 410 MHz, and 970 to 1010 MHz, and the high frequency transmission rate is obtained. It is 〇〇% or more; in the range of 43〇-30-200835045~5 30MHz and 7 50~7 80MHz, the high frequency transmission rate is 〇%. For the signal pattern 2, in the range of approximately 130 to 180 MHz, 240 to 300 MHz, 320 to 3 60 MHz, and 760 to 7 80 MHz, the high frequency transmission rate is 100% or more; in the band of 640 to 7 20 MHz, the high frequency transmission rate It is 0%. Especially at 344MHz, it shows a transfer rate of 2715%. Depending on the difference in signal pattern, the band that is not transmitted by the high frequency and the band that has a high frequency transfer rate are different. On the other hand, in the case of the high-frequency transmission lines of Comparative Examples 1 to 3 (see FIGS. 29 to 31), the copper foil was used, and the high φ frequency transmission rate was 100% or more as compared with Examples 1 to 9. The band and the band with a high frequency transfer rate of 0% are narrow, and the frequency dependence of the high frequency transfer rate is low. As is clear from Fig. 32, in the case of the high-frequency transmission line of Comparative Example 4, since the nickel layer of the electroconductive thin film exceeds 70 nm, the copper layer exceeds 1 /zm, and the band of the high-frequency transmission rate of 〇% is not Find. As is clear from Fig. 3, in the case of the high-frequency transmission line of Comparative Example 5, the signal pattern 1 has a high-frequency transmission rate of 0% in the band of 700 to 7 30 MHz. However, since the conductive film of this transmission line is not pressurized, the band having a high frequency transfer rate of 0% is narrower than that of Embodiments 1 to 9. Further, the maximum 値 of the transfer rate was 580.1%, which was lower than that of the seventh embodiment of the pressurization. As is clear from FIG. 34, in the case of the high-frequency transmission line of Comparative Example 6, for the signal pattern 1, in the band of 430 to 500 MHz and 770 to 770 MHz, the high-frequency transmission rate is 0%; for the signal pattern 2 In the range of 610 to 650 MHz and 900 to 930 MHz, the high frequency transmission rate is 〇%. However, since the conductive film was not pressurized, the maximum transfer rate was 578.4%, which was lower than that in Example 7 after the pressurization was applied. -31- 200835045 BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1(a) is a cross-sectional view showing a conductive film obtained according to an embodiment of the present invention. Figure 1 (b) shows a magnified cross-sectional view of Part A of Figure 1 (a). The first (c) diagram shows an enlarged cross-sectional view of the A' portion of the first (b) diagram. The first (d) diagram shows an enlarged cross-sectional view of the A" portion of the first (b) diagram. The second (a) diagram shows a cross-sectional view of the conductive film obtained according to another embodiment of the present invention. Fig. 2(b) is a schematic cross-sectional view showing a portion B of Fig. 2(a). Fig. 3(a) is a cross-sectional view showing a conductive film obtained according to still another embodiment of the present invention. Fig. 3(b) is a schematic enlarged plan view showing a portion C of the third portion (a) of Fig. 3(a) showing a sectional view of a conductive film obtained according to still another embodiment of the present invention. Fig. 4(b) is an enlarged cross-sectional view showing a portion D of Fig. 4(a). Fig. 5 is a perspective view showing a conductive film obtained according to still another embodiment of the present invention. Fig. 7 is a perspective view showing a conductive film obtained according to still another embodiment of the present invention. - Figure 8 is a perspective view showing a conductive film obtained according to still another embodiment of the present invention. A schematic diagram of an example of a device for energizing a micropore in a composite film. Fig. 9 is a view of Fig. 8 Fig. 10 is a partially enlarged cross-sectional view showing a state in which a micropores are formed in a composite film having a metal thin film while being electrically connected, in the apparatus of Fig. 8. φ Fig. 11 In the apparatus of Fig. 8, a partially enlarged cross-sectional view showing a state in which micropores are formed in a composite thin film having metal thin enamel on both sides, and the energization is performed. Fig. 2 is a view showing an embodiment of the present invention. A perspective view of a high frequency transmission line. Fig. 13 is a perspective view showing a high frequency filter obtained according to an embodiment of the present invention. Fig. 14 shows a connection of an oscillator and a receiver to a high frequency transmission line. A schematic diagram of the state of $. Figure 15 shows a schematic diagram of the oscillator configuration used for high-frequency transmission rate measurement. Figure 16 (a) shows the signal from the oscillator from the (+) side. A schematic diagram of the signal pattern of the case where the output is transmitted. The 16th (b) diagram shows a schematic diagram of the signal pattern in the case where the signal from the oscillator is transmitted from the (one) side. Fig. 17 is a diagram showing the relationship between the frequency in the high-frequency transmission line of Embodiment 1 and the high-frequency transmission rate. -33- 200835045 Figure 18 shows the frequency in the high-frequency transmission line of Embodiment 2. Figure 19 is a diagram showing the relationship between the frequency in the high-frequency transmission line of Embodiment 3 and the high-frequency transmission rate. Figure 20 is a diagram showing the high-frequency transmission of Embodiment 4. Figure 21 is a diagram showing the relationship between the frequency in the line and the high-frequency transmission rate. Figure 21 is a diagram showing the relationship between the frequency in the high-frequency transmission line of Embodiment 5 and the high-frequency transmission rate. Figure 22 is a diagram of Figure 21. Enlarged image. Fig. 23 is a diagram showing the relationship between the frequency in the high-frequency transmission line of Embodiment 6 and the high-frequency transmission rate. Figure 24 is an enlarged view of Fig. 23. Fig. 25 is a graph showing the relationship between the frequency in the high-frequency transmission line of the seventh embodiment and the high-frequency transmission rate. Fig. 26 is a diagram showing the relationship between the frequency in the high frequency transmission line of the eighth embodiment and the local frequency transmission rate. Figure 27 is a graph showing the relationship between the frequency in the high frequency transmission line of Embodiment 9 and the high + frequency transmission rate. Figure 28 is an enlarged view of Figure 27. Fig. 29 is a graph showing the relationship between the frequency in the high-frequency transmission line of Comparative Example 1 and the high-frequency transmission rate. Fig. 30 is a graph showing the relationship between the frequency in the high-frequency transmission line of Comparative Example 2 and the high-frequency transmission rate. Fig. 31 is a graph showing the relationship between the frequency in the high-frequency transmission line of Comparative Example 3 and the high-frequency transmission rate. -34 - 200835045 Figure 32 is a graph showing the relationship between the frequency in the high-frequency transmission line of Comparative Example 4 and the high-frequency transmission rate. Fig. 33 is a graph showing the relationship between the frequency in the high frequency transmission line of Comparative Example 5 and the high frequency transmission rate. Fig. 34 is a graph showing the relationship between the frequency in the high-frequency transmission line of Comparative Example 6 and the high-frequency transmission rate. Figure 35 is a perspective view showing an example of a conventional high-frequency transmission line. Figure 36 is a perspective view showing another example of a conventional high frequency transmission line. Fig. 37 is a perspective view showing still another example of a conventional high frequency transmission line showing another example of a conventional high cheek transmission line. Fig. 39 is a perspective view showing still another example of a conventional high frequency transmission line. Fig. 40 is a perspective view showing still another example of the conventional transmission line.
【主要元件符號說明】 1 導電薄膜 1 ’ 複合薄膜 Γ， 積層膜 2 介電體基板 4 端子 5 高頻振盪器 6 高頻接收器 7 鱷口夾 -35- 200835045[Main component symbol description] 1 Conductive film 1 'Composite film Γ, laminated film 2 Dielectric substrate 4 Terminal 5 High-frequency oscillator 6 High-frequency receiver 7 Alligator clip -35- 200835045
8 整合器 10 塑膠薄膜 10， 塑膠分子 11a 第一金屬薄膜 11a， 第一金屬原子 lib 第二金屬薄膜 lib， 第二金屬原子 12 傾斜組成層 12’ 傾斜組成層 13 黏著層 14 微細孔 20 凸部 5 0 輸出端子 51 電壓控制振盪器（VC〇） 52、 5 2’ 、5 2，， 高頻振盪模組 53 > 53, 高頻放大器 55 捲出機 56 捲取機 60 跳動輥 61 開幅輥 62a ' 62b 電極輥 63a ^ 63b 電極輥 6 4 第一輥 65 第二輥 67 Z回繞輥 -36- 200835045 68 跳動輥 70 電纜 70a、 70b 電源 100 帶狀導電薄膜 110 內導體 110, 外導體 120 導波管 130 帶狀導體 140 接地導體 200 介電體 210 介電體基板 620a 、620b 套筒 630a ^ 63 0b 套筒 -37-8 Integrator 10 plastic film 10, plastic molecule 11a first metal film 11a, first metal atom lib second metal film lib, second metal atom 12 inclined composition layer 12' inclined composition layer 13 adhesive layer 14 micro hole 20 convex portion 5 0 output terminal 51 voltage controlled oscillator (VC〇) 52, 5 2', 5 2,, high frequency oscillation module 53 > 53, high frequency amplifier 55 winder 56 coiler 60 dancer roller 61 open width Roller 62a' 62b Electrode Roller 63a^63b Electrode Roller 6 4 First Roller 65 Second Roller 67 Z Rewinding Roller -36- 200835045 68 Jumper Roller 70 Cable 70a, 70b Power Supply 100 Strip Conductive Film 110 Inner Conductor 110, Outer Conductor 120 Guide tube 130 Strip conductor 140 Ground conductor 200 Dielectric body 210 Dielectric substrate 620a, 620b Sleeve 630a ^ 63 0b Sleeve-37-