Classifications

• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B81—MICROSTRUCTURAL TECHNOLOGY
  • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
  • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
  • B81B7/0032—Packages or encapsulation
  • B81B7/0045—Packages or encapsulation for reducing stress inside of the package structure
  • B81B7/0054—Packages or encapsulation for reducing stress inside of the package structure between other parts not provided for in B81B7/0048 - B81B7/0051
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B81—MICROSTRUCTURAL TECHNOLOGY
  • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
  • B81C2203/00—Forming microstructural systems
  • B81C2203/01—Packaging MEMS
  • B81C2203/0109—Bonding an individual cap on the substrate
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W72/00—Interconnections or connectors in packages
  • H10W72/071—Connecting or disconnecting
  • H10W72/072—Connecting or disconnecting of bump connectors
  • H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W72/00—Interconnections or connectors in packages
  • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W90/00—Package configurations
  • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
  • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
  • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

Definitions

• Mechanically sensitive components are e.g. those which have mechanically movable parts, such as MEMS components (microelectromechanical system). Components working with acoustic waves are sensitive to mass loads because they can dampen the -acoustic wave or influence its propagation velocity or alter the resonance frequency of volume oscillators. Even stressed piezoelectric substrates change their electromechanical properties, which, for example, in the speed of the acoustic wave and thus in the associated frequency affects.
• quartz crystals can be used, which can meet the above requirements in a satisfactory manner.
• SAW Surface Acoustic Wave
• BAW Buick Acoustic Wave
• Object of the present invention is therefore, a component with a new .Housing .for stress and specify / or- -kon-tamin-ations ⁇ ⁇ sensitive components, which is easily manufactured and provides a low-stress fitted sensitive components side.
• the invention proposes a component with a cavity and a cavity arranged in the mechanically sensitive e- lektrischen component in which is dispensed with a rigid connection between the component and the housing. Rather, a two-part housing of a first and a second housing part is proposed, of which at least one a recess for the component, in which the component is used, and which are mutually connected via mutually matching joining surfaces. While connection surfaces are provided at the bottom of the recess, the component has contact surfaces facing the connection surfaces. To avoid stress Stress now associated with the contact surfaces and the pads mounts are provided, via which the device comprising a chip mounted in the cavity and is electrically connected.
• the brackets are elastically or plastically deformable and therefore suitable to absorb forces that may arise on the device due to differential thermal expansion of the device chip and housing or by external mechanical action on the housing.
• a component is obtained in which the maximum forces that can act on the chip of the component are set by the holders of their deformation. This may be the brackets are set exactly a discoverede- design and- ⁇ dimensioning.
• the attachment points of the brackets are both evenly distributed on the component as well as evenly on the housing part, so that acting forces from all directions can be intercepted in the same way.
• the component has the further advantage that the component chip and the housing are mechanically completely decoupled so that the material selection for the housing and the component chip can take place independently of one another.
• the materials for the housing can be selected independently of the material of the component chip. Accordingly, a material optimized solely for the housing requirements can be used, which has sufficient mechanical strength, good Beit zucchini and optionally hermetic tightness allows. Also with respect to the two housing parts no mutual material adjustment with respect to similar or the same thermal expansion must be done because thermal stresses between the two housing parts can no longer act on the device chip and therefore are harmless for its undisturbed function.
• the brackets have a geometric configuration, can be absorbed by the tensile and compressive stresses elastic or plastic. This can be achieved by brackets that are not linear, are bent or bent one or more times in one or more spatial directions or are angled, meandering or have suitable longitudinal and / or transverse slots in a band-shaped material.
• the brackets can also be designed spirally with one or more turns.- This makes it possible to ⁇ set or increase the inductance of the brackets or to integrate an inductance into the brackets.
• the brackets are preferably made of metal, but may also be multi-layered and optionally have non-conductive layers, coatings or other material reinforcements.
• the proposed component has the advantage that standard substrates can be used for the housing, for which an existing technology is available and which is also optimized from a cost point of view.
• the proposed component is particularly suitable chip components such as sensors, resonators or filters in SAW (surface acoustic wave), BAW (bulk acoustic wave) or in MEMS (micro-electro-mechanical System) or quartz oscillator.
• the component can be designed as an inertial sensor in which a mechanical self-resonance in the respective translational or rotational axis can be adjusted by matching the chip mass and the rigidity of the holders. Therefore, it is possible to set this self-resonance outside the bandwidth to be detected. Thus, the excitation of the self-resonance in the sensor application is difficult and disturbances due to natural vibrations of the sensor are avoided.
• the particularly low-voltage installation of the component chip in the housing enables applications that are particularly sensitive to tension and stress.
• the component chip can therefore be particularly advantageously a resonator serving as a frequency reference, which preferably operates hermetically encapsulated in the cavity at an operating frequency of more than 500 MHz.
• an oscillator can still be arranged in the component.
• the arrangement of a resonator (first " component " ) together with an oscillator circuit (second component) within the same housing has the advantage that
• High frequency leading connections between the resonator and oscillator circuit can be performed on the shortest path without leaving the housing temporarily.
• the contacts of the components are provided or wired so that minimum conductor lengths are necessary when connecting the two components.
• the suspended or free-floating attachment of the component chip can be achieved with holders which, between two regions, have a longitudinal extent parallel to the bottom of one of the housing parts, which preferably does not run linearly.
• Each of the holders is connected via a first region with an electrical connection surface on the bottom of the first housing part.
• the second region of the holder is arranged at a distance from said base and connected to the contact surfaces of the device.
• the order of magnitude (in particular the thickness) of the holders can be in the region of optionally reinforced conductor tracks. In this way, an air gap remains between the bottom of the housing part and the component.
• the component has an air gap with respect to all housing parts, the size of which can be adapted to the expected mechanical load of the component. It is also advantageous to adapt the recess in the at least one housing part in such a way to the base surface of the component, "däss a" low as possible air gap: remains between the periphery of the component and the inner edge of the recess.
• a small air gap helps dampen unwanted mechanical resonances in the Z direction, that is to say vertically to the connection plane of the two housing parts, by the flow resistance of the air in the air gap. It is advantageous, for example, to form the cross-sectional area of the air gaps parallel to the aforementioned connection area smaller than 50 percent of the component area, but preferably even smaller than 30 percent.
• the pads on the bottom of the first housing part are preferably via vias with solderable
• connection surface can a separately generated metallization on the ground, which is located directly above a via.
• SMT face mount technology
• the housing part has a multilayer construction with at least one inner structured metallization plane.
• This metallization level can be used as a wiring level.
• 15 metallization level can also passive components such as capacitors, inductors and resistors can be realized. For this purpose, two or more internal elements are advantageous.
• the holders can be designed as inductances, which is supported by their relatively large longitudinal extent.
• At least the frame structure has at its upper edge a flat surface, on which a likewise planar or at least in the region of the joining surface plan formed second housing part sit and so can close the recess formed by the frame and bottom plate to the cavity.
• the frame-shaped structure can also be applied subsequently to a substrate which is substantially planar and forms the bottom of the first housing part.
• a substrate which is substantially planar and forms the bottom of the first housing part.
• printing is suitable, wherein either a polymer material or a filled with ceramic and / or metallic particles paste can be used. It is also possible to galvanize the structure.
• Another possibility is to produce the frame photolithographically from a resist film and in particular from a directly structurable photoresist layer.
• the resist layer can be applied as a paint by spin coating, casting, dipping or spraying.
• the application of the resist layer as a dry film, for example by lamination. In particular, temperature-resistant and against indiffusion of
• Moisture-tight polymers are suitable as a framework structure.
• Such materials can be selected from preferably aromatic liquid-crystalline polymers, from so-called high-performance thermoplastics, the polycondensates from the class of polyaryletherketones, polysulfones, polyphenylene sulfide, polyphenyl ether sulfone, polyethersulfone, polyether ketone or polyetheretherketone. Mixtures of the polymers mentioned are also suitable. In addition to the high temperature resistance These are also characterized by a relatively high hardness.
• the structuring can be done by phototechnology or laser ablation.
• a scanning exposure can be carried out with a radiation source and in particular with a laser.
• a non-metallic frame to a substrate forming the bottom plate of the first housing part and then to metallize at least on the surface which forms the joining surfaces. This has the advantage that with metallic joining surfaces, in particular when they are connected to likewise metallic second joining surfaces, particularly simple hermetic connections can be made which enable hermetic sealing of the cavity between the base plate, frame and planem second 'housing part.
• Both the bottom plate and the second housing part can be ceramic materials, in particular ceramic multilayer plates such as LTCC (low temperature cofired ceramics) or HTCC (high temperature cofired ceramics), glass, silicon, plastic and in particular a liquid crystalline polymer , a printed circuit board laminate or other suitable circuit carrier. Also suitable is, for example, a MID molded part (Molded Interconnect Device) ⁇ .
• the low-stress suspension of the component makes it possible to use different materials for the first housing part consisting of bottom plate and frame structure and a cover forming the second housing part, which can be optimized for the respective requirements. It is advantageous, for example, to realize the cover made of a metal foil or a metal-coated foil, in particular a metal-coated plastic foil. This is especially connect well with a metallic or metal-coated joining surface of the lower first housing part.
• Such a component has good electromagnetic shielding for the component.
• the inside of the frame structure and a peripheral region arranged on the bottom plate in the vicinity of the frame structure in the cavity can also be metallized. In this way, an otherwise hermetic closure of the cavity is not affected by a gas-permeable frame material.
• the cavity may also be provided in the second housing part. Since the second housing part tion no further structuring and require particular no plated-through hole, it can be used as cap and in particular as a metallic cap be formed, which then on the joining surface on a preferably flat "first housing portion" or "the this first" Geotrou 'seteii forming substrate is seated.
• the metallic cap also produces a good shield, which can be reinforced by a further metallization below the cap on the first housing part.
• the recess formed in a housing part or the wall delimiting the recess can also be an integral part of the substrate (base plate). As such, it is manufactured integrally with the substrate, in particular by applying and structuring further floorboard material.
• a multilayer ceramic base plate for example, one or more of the uppermost
• Layers with said recess already be preformed in the green sheet, which form a correspondingly shaped first housing part after lamination and sintering.
• the joining surfaces can be metallized to the inner wall and portions of the bottom surface of the recess.
• Metallic joining surfaces can be connected by soldering, bonding or by welding. Glass solder is suitable for many inorganic materials used on the joining surfaces. Usable universally are adhesives.
• the brackets can be used for simultaneous electrical and mechanical bonding of the component to the housing part and the mechanical and electrical connection surfaces provided thereon.
• a mechanically rigid connection can be provided, which is preferably arranged in the middle of the component and limited to a narrow area, so that no thermal see-tension on this single rigid connection at widely spaced attachment points may occur.
• This single rigid connection has the advantage that the brackets need to be mechanically less stable and can be configured to a deformation of a lower force oppose than would be the case with a component in which all connections between the component and the housing part via the brackets. Even natural vibrations of the device can be reduced. In this way, even less stress on the device, which could affect the device function.
• FIG. 1 shows various embodiments of components according to the invention
• FIG. 2 shows the production of a component according to a first exemplary embodiment
• FIG. 3 shows the production of a component according to a second exemplary embodiment
• FIG. 4 shows the production of a component according to a third exemplary embodiment
• FIG. 5 shows how components manufactured on a wafer can be separated by means of an automated method at a greater distance on a subcarrier.
• FIG. 1 shows various possible embodiments of components according to the invention in schematic cross section.
• a first housing part GT1 comprises a flat circuit carrier which can serve as a substrate for arranging 5 components BE thereon and for fitting the second housing part GT2.
• the substrate has sufficient mechanical strength and comprises at least one layer of electrically insulating material.
• multilayer circuit carriers which are
• At least two dielectric layers DS1, DS2 have at least one structured metallization plane.
• solderable contacts LK are arranged, which via through holes DK and here also by metallization of the metallization with the
• the holders HA have a first region which rests on the surface of the substrate. A second of them removed
• the area is at light distance h above the surface of the substrate. Between first and second area
• the holder HA is preferably non-linear and is curved and / or angled and / or provided with slots.
• An electrical component BE is electrically and mechanically connected to the second region of each holder via its contact surfaces (not shown in the figure).
• the bond is assisted by an intermediate bonding agent such as a solder bump (e.g., solder with Sn, Pb, Ag, or Au), Studbump (e.g., Au), Lotzinn, or the like.
• a solder bump e.g., solder with Sn, Pb, Ag, or Au
• Studbump e.g., Au
• Lotzinn or the like.
• the connection can be made by thermosonic or thermocompression methods.
• conductive adhesive e.g., solder with Sn, Pb, Ag, or Au
• FIG. 1A A second housing part GT2 is seated on the surface of the substrate, which forms the first housing part GT1, which has a recess which, for example, is surrounded by a substantially uniformly thick material layer of the second housing part GT2.
• the recess is dimensioned so that the component together with the brackets fits in the recess without hitting the cap.
• the cap is metallic and, for example, deep-drawn or embossed, and is with any
• the substrate has a metallic joining surface on which the metallic or metallically coated cap is soldered, welded, bonded or glued.
• the metallic or metallically coated cap is soldered, welded, bonded or glued.
• a protective gas atmosphere can be introduced to sensitive structures of the device BE from moisture, corrosion or oxidation
• a getter material can be introduced into the cavity for the harmless binding of existing moisture or harmful gaseous emissions.
• the cavity may include a negative pressure.
• FIG. 1B shows a further embodiment of the invention in which the two housing parts have a planar circuit carrier as a base plate BP or substrate, a frame-shaped structure RS resting thereon and a plane thereon
• covering layer which represents the second housing part GT2.
• Substrate and frame structure form the first housing part.
• the frame structure is subsequently but preferably generated before applying the device BE on the substrate or applied.
• the planar layer of the second housing part GT2 rests on the frame structure and is connected to the frame structure directly or by means of a sealing or soldering means (not shown in the figure).
• the substrate forming the housing bottom can be selected as in the first exemplary embodiment.
• the frame structure is made of a separate material, preferably different from the substrate.
• the covering layer the same choice applies in principle as for the materials of the substrate.
• the second housing part GT2 since the second housing part GT2, however, only has a cover function without required structuring, the second housing part is preferably designed as a single-layer, metallic or, if appropriate, metallic laminated. Possible, for example, 50 to 100 .mu.m thick metal foils of copper, nickel or Kovar and metallized plastic films.
• the frame structure is preferably metallised, so that soldering and welding are possible as bonding methods.
• the second housing part or the frame structure be coated with a thin soft solder layer.
• the solder has a relatively high solidification point of, for example, clearly above 26O 0 C in order to avoid re-melting of the solder joint during soldering of the finished component in an electronic circuit.
• alloys such as AuSn or glass solder can be used.
• a brazing alloy having a high softening point by definition of at least 450 ° C. can be used and advantageously by local heating in the area of the joining surfaces For example, be melted by means of thermodes or focused radiation or laser.
• a third possibility consists of diffusion soldering, in which a low-melting solder (eg a tin layer only a few ⁇ m thick) reacts almost completely with the metallic joining surfaces (eg of Cu) to form high-melting intermetallic phases such as Cu 3 Sn.
• a low-melting solder eg a tin layer only a few ⁇ m thick
• the metallic joining surfaces eg of Cu
• high-melting intermetallic phases such as Cu 3 Sn.
• Figure Ic shows a third embodiment, in which the "'' first housing part ⁇ GT1 ⁇ is formed of a solid, optionally monolithic material so that a recess arranged on the O-O recess can accommodate a component BE including brackets HA.
• Shown in FIG. 1c is an embodiment with the first housing part GT1, which only has plated-through holes DK in the region of the bottom.
• the first housing part can also be manufactured from a plurality of dielectric layers in which structured metallization levels are integrated, at least in the bottom area.
• the plated-through holes can again be offset from one another by the individual dielectric layers, as has already been shown with reference to FIGS. 1a and 1b.
• the holders HA can be applied to the bottom of the recess directly on the surface of the first housing part GTl. It is also possible, however, under the brackets metallic pads directly to the ground or to provide the surface of the first housing part within the recess.
• the cover layer forming the second housing part GT2 can be designed as described in FIG.
• Figure Id shows a fourth embodiment, which is a modification of Figure Ib (2nd embodiment).
• This component also comprises a substrate, which represents the base plate BP of the housing, a frame structure RS seated thereon and a covering layer seated thereon, which represents the second housing part GT2.
• the holders are located on connection surfaces AF, which rest on the substrate but are guided out of the recess below the frame structure. Only outside the cavity, these pads are vias or via interconnects which extend beyond the outer edge of the substrate away to the underside of which, connected to -lötfäh-IgE n contacts LK that the subpage of the substrate are arranged on ⁇ '.
• Such a substrate has all the advantages of a single-layer circuit carrier, in particular the simple manufacture and the possibility of hermetic closure.
• Components according to the invention may also have a plurality of components BE in the recess, of which at least one is sensitive to stress in terms of its component functions.
• the component may have sensitive component structures which are preferably arranged on SAW and BAW components on the surface of the component chip pointing toward the lower housing part GT1.
• the component can also carry internal structures or component structures on the surface facing the second housing part GT2.
• a transparent housing part makes it possible to act with radiation on an encapsulated component in order to change structures.
• electrical connections can optionally be separated or a component 0 trimmed. This can be done in particular by a material removal by means of a laser irradiating through the cover layer. In principle, however, it is also possible to introduce energy by means of the laser beam, which is suitable for material transport in order to deposit the material again at another point.
• the starting point is a large-area circuit carrier, here a multilayer substrate BP with an internal one Metallization levels, which has plated-through holes DK, with which contact surfaces KF on the surface are connected to solderable contacts LK on the bottom side 5.
• the substrate is in particular a substrate wafer or a large-surface substrate on which a multiplicity of components can be applied next to one another in order to produce them a corresponding or smaller number of components by later separation of the substrate wafer or separating the Bau- 0 parts to produce.
• a sacrificial layer OS is applied to the substrate BP as a whole-area layer, preferably in the form of a paint by spinning, pouring, dipping or spraying. Even a dry film can be laminated.
• the sacrificial layer OS is structured, for example by means of phototechnology by direct or indirect structuring or by means of laser ablation.
• the structuring takes place in such a way that at the locations where the holders later run at a distance from the surface of the substrate, corresponding layer regions of the sacrificial layer remain.
• a photoresist as a sacrificial layer OS can be patterned by development, for example.
• Figure 2A shows the arrangement at this stage of the process.
• brackets -step be generated by ⁇ ⁇ to-- is next blanket deposited a metallization on freely exposed surfaces of the substrate and sacrificial layer OS and subsequently patterned.
• a metallization on freely exposed surfaces of the substrate and sacrificial layer OS and subsequently patterned.
• wet chemical deposition, PVD, sputtering or vapor deposition are suitable.
• this metallization can be galvanically or electrolessly amplified.
• materials for the metallization of the holder for example, copper, nickel, chromium, aluminum, titanium, silver or palladium in a thickness of 1 - 50 microns is suitable.
• an adhesion layer with a thickness of less than 1 .mu.m can still be applied, for which, for example, titanium, zirconium, hafnium, tungsten or chromium are suitable. It is advantageous, for example, to apply the adhesive layer over the entire surface and then to structure it and to galvanically reinforce the structured adhesive layer. It is also possible on a whole-area Base layer to apply a resist and to produce the metallization by electrodepositing a resist pattern by amplifying the exposed in resist openings base metallization. After removing the resist pattern, the re-exposed base metallization is removed by etching.
• the structuring of this metallization is carried out such that between a first region of the metallization, which rests on a connection surface AF on the substrate top side and a second region which is guided on the surface of the sacrificial layer OS, a non-linear or slotted and in particular band-shaped portion arises.
• the patterning can also be carried out such that a nonlinearly shaped section such as a bridge is guided over a layer region of the sacrificial layer, with both ends of the section being connected to the substrate surface or a contact surface. ⁇ - - - ⁇ - . .. ...
• the dimensioning of the holders can be in the range of the conductor tracks used, which have, for example, a width of 10 to 200 .mu.m and a thickness of 1 to 50 .mu.m.
• An exemplary quartz chip with dimensions of 2 ⁇ 1 ⁇ 0.1 mm 3 for resonators as exemplary components has a mass of approximately 0.5 mg.
• four to six brackets can be provided, and it is also possible to provide brackets without corresponding electrical connection only for purely mechanical attachment. If an acceleration of 10,000 G acts on such a component, one obtains one per connection
• FIG. 2B shows the arrangement at this stage of the process.
• a component chip BE is placed on the structured holders and fixed by soldering.
• the component chip already has prefabricated soldering or Studbumps BU via its contact surfaces, with which it is placed on the prefabricated second region of the holders. It is also possible to apply these soldering or Studbumps on the second resting on the sacrificial layer OS areas of the holders HA.
• Figure 2C shows the arrangement during placement.
• the device can be attached to the brackets with conductive adhesive.
• the subcarrier is then placed with the components on the substrate so that the components are arranged in the recesses on the .HaI- tungen.
• an adhesive film can be used as a subcarrier.
• the fixed to the subcarrier components are then electrically and mechanically connected to the brackets. Finally, the auxiliary film can be removed.
• a trim process can be performed in which the properties of the device can be changed in particular by applying or removing material and adapted to the desired setpoint.
• ion beam etching is suitable for removing material.
• the sacrificial layer OS is removed.
• the sacrificial layer preferably comprises a material which can be thermally converted to the gaseous state by decomposition, oxidation, evaporation or sublimation to more than 99.9 percent by mass.
• polymers from the class of cyclic polyolefins are suitable, for example, and for example, from such "existing 'materials' sacrificial layer by Erhit-" is zen volatilized to a temperature of less than 300 ° and preferably to less than 180 ° C.
• Suitable compounds which decompose completely into gaseous products belong eg to the substance class of the polynorbornenes.
• FIG. 2D shows the arrangement in which the second regions of the holders HA are now arranged at a clear distance above the surface of the substrate, so that a gap of approximately 1 to 50 ⁇ m remains. This corresponds approximately to the thickness of the sacrificial layer produced.
• a second second housing part GT2 provided with a recess, in particular a prefabricated metallic cap, which has a sufficiently large recess for forming a cavity, is placed on the substrate and fastened thereon.
• the second housing part comprises a metallic layer at least on the underside or consists entirely of metal
• a soldering process can be used on the baseplate BP for attachment to a further metallization WM.
• FIG. 2E shows the finished component.
• a circuit carrier BP serving as a substrate is provided with a structured sacrificial layer OS, via which a metallization is produced and patterned, which forms the later holder. corresponds to HA.
• a frame structure RS is now produced on the surface of the substrate, for example galvanically and in particular by galvanic molding.
• the circuit carrier BP can already be provided by the manufacturer with a correspondingly structured base metallization GM, which is then thickened only to form the frame structure.
• FIG. 3C shows the thus completed first housing part with the substrate and the frame structure RS applied thereto.
• a component chip BE is placed on the second regions of the holders HA as in the first exemplary embodiment (FIG. 3D) and connected thereto.
• the connection can be made as previously described with reference to FIG.
• the sacrificial layer OS is subsequently removed, the second regions of the holders HA remaining in the air gap
• the holders are designed to accommodate plastic and / or elastic deformations.
• FIG. 3F The metallic frame structure RS can now be compared with a second at least comprising a metallic layer
• This solder layer LS can e.g. 10 microns thick and include a Sn layer.
• both substrate BP and second housing part GT2 or the cover used for this are preferably large-area and encloses a plurality of cavities or components, the components are separated in the last step, wherein from one or two sides incisions are made in the housing parts so that the cavities remain closed.
• the singling of the sealed housing produced at the wafer level can be done by sawing, by laser structuring or by breaking.
• FIG. 4 shows the production of a component according to a fourth exemplary embodiment, in which, in contrast to the first and second exemplary embodiments, a substrate with a prefabricated recess is used, which forms the first housing part GT1.
• the sacrificial layer OS and the holders HA which can be patterned with it have to be generated within the recess.
• Bottom plate BP and side walls SW of the first housing part GTl are preferably made of the same dielectric material. Together with the producible 'ung of the brackets can be a metallization "" FM to- ⁇ "minimum are on the joint face forming portion of surface applied surface, wherein the recess surrounds a frame shape.
• the metallization may in this case also parts of the inner wall and the bottom of the 4F, the placement of the component chip and the removal of the sacrificial layer are carried out as explained in the other examples
• the second housing part GT2 is selected and applied as in the second exemplary embodiment. in which the metallization is applied both on the joining surfaces and on the inner walls and partly on the bottom of the recess, whereby it is possible to galvanically separate the metallization FM on the joining surfaces of the metallization on the inner surfaces of the side wall, as shown in FIG 4F is shown on the right (case b), on the left (case a) is the metallization in the region I of joining surfaces and side wall in one piece or uninterrupted.
• connection of the first and second housing part by means of soldering, it is advantageous to separate the metallization on joining surfaces and insides of the recess as shown in Figure 4F right as case b or provide a non-wettable with solder stop layer at the transition to the solder at Connect the first and second housing part by means of soldering in the connection area of the joining surfaces to hold and prevent it from escaping.
• An at least partially metallic lining of the interior of the recess makes it possible to produce this side wall, which delimits the recess, from a material which is permeable to gas or moisture by itself.
• a high quality seal can be effected with DER also "the interface" between the side wall '(frame “structure) and substrate (base plate) to be sealed of the first housing part GTl.
• the metallization is also advantageous for a design in which the frame structure is adhered to the substrate.
• the metallization can also be applied at least partially via PVD processes such as sputtering or vapor deposition.
• PVD processes are combined with galvanic or electroless metal deposits.
• a lowermost adhesive layer may be e.g. 50nm Ti and above 200nm Cu.
• Mounts, metallic frame structures and / or metallic linings of the cavity can be economically in the particular desired layer thickness best means Manufacture electroplating.
• different material thicknesses and / or different metals may be preferred for different functional elements, eg a common base metal with different surface coatings. It is therefore advantageous to make the necessary connections for electroplating so that onsetti separate galvanic steps can be performed for different radio 'ti. For example, it is avoided that metal layers required for certain functional elements (eg an Au coating in the case of studbumps) are also produced in other functional elements.
• the sacrificial layer is removed after the production of the holders, before the component is placed on the holders and connected to them.
• a permanent electrical and mechanical "" Connection between the component and mounts can also be achieved by removing the sacrifice layer by having provided for connection to the component second areas of the mounts that a distance h to the bottom of the recess, the through for set-up on Ground pressed until the connection is made.
• the elastic deformability of the holders is utilized, which subsequently return to their original position or shape after connection to the component, so that the bonded component again at the corresponding desired distance h to the bottom of the recess and thus to the lower first Housing part is arranged.
• FIG. 5 shows a method with which the component chips produced in parallel in a component wafer can be singled out in such a way that a provisionally fixed arrangement of components with a suitable component spacing or in the appropriate grid is obtained.
• the component wafer with the rear side which has no electrical connections, adhered to an auxiliary carrier HF, preferably to a so-called UV release film.
• the device wafer is sawed through from the front, without severing the film
• the adhesive effect can be greatly reduced and virtually eliminated by UV effects. This is now exploited by adhering the components sticking to such an auxiliary foil HF to the component front side on a further auxiliary foil.
• the adhesive effect desired components by selective irradiation ⁇ "on" the 'Ruc' kseite the UV-release film repealed ⁇ - ben.
• those chips can now be transferred to the second auxiliary film whose adhesive effect was reduced to the UV release film.
• a further preferred possibility of singulation also uses two steps, wherein in a first step the component front side is cut into the component wafer. Subsequently, the component wafer is applied with the front side on an adhesive film or a subcarrier and ground off the back so far until the Einsägungen are exposed and thus the individual components are isolated. Subsequently, the components are reacted with the back, for example, to said release film.
• the process steps are carried out in such a way that the components on the last auxiliary used in the process foil with the contact surfaces opposite the back rest.
• the invention is not limited to the illustrated exemplary embodiments and the figures. Rather, the specially designed brackets can be combined with almost all known cavity housings. Always a stress-free installation of the device is achieved, so that the device is reliably operable even with strong thermal and mechanical Wech- Seibelasteptept without undue change in the device properties.
• the proposed component is not limited to a particular type of device and allows the miniaturized packaging of a variety of different chips, especially just those with high sensitivity to mechanical stress.
• the invention also opens up the possibility of hermetic sealing, which reliably prevents the penetration of gases, moisture or chemicals.
• the protection of " the device" can be supported by providing a protective gas atmosphere within the cavity.
• a component housing can be obtained, which is designed inside completely free of organic substances, since all components remaining within the cavity can be inorganic in nature. Contamination-sensitive component chips can thus be protected against outgassing components.
• the sacrificial layer can be used for structuring the holders, wherein regions detached from the substrate surface or spaced apart from one another are used.
• the bonding of the components to these areas can be supported by the sacrificial layer, if the bonding before removing the Op- Ferschlicht takes place.
• the detached areas of the holders are supported by the sacrificial layer arranged underneath.
• different metallization steps can also be used for the simultaneous production of holders and metallizations on housing parts which are used to improve the joining surfaces or to shield the recess or the entire component.
• metallization processes can be used alternately and simultaneously for the production of other metallizations of the component.
• DM sealant e.g. adhesive

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• Engineering & Computer Science (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Computer Hardware Design (AREA)
• Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
• Micromachines (AREA)
• Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Priority Applications (3)

Applications Claiming Priority (2)

Publications (1)

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Family Applications (1)

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Cited By (6)

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Citations (5)

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• 2005
  • 2005-10-20 DE DE102005050398A patent/DE102005050398A1/de not_active Withdrawn
• 2006
  • 2006-09-29 JP JP2008535876A patent/JP2009512369A/ja active Pending
  • 2006-09-29 US US12/090,529 patent/US20090127697A1/en not_active Abandoned
  • 2006-09-29 DE DE112006002336T patent/DE112006002336A5/de not_active Withdrawn
  • 2006-09-29 WO PCT/DE2006/001736 patent/WO2007045204A1/de not_active Ceased

Patent Citations (5)

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