WO2007010361A2 - A mems package using flexible substrates, and method thereof - Google Patents

A mems package using flexible substrates, and method thereof Download PDF

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Publication number
WO2007010361A2
WO2007010361A2 PCT/IB2006/001966 IB2006001966W WO2007010361A2 WO 2007010361 A2 WO2007010361 A2 WO 2007010361A2 IB 2006001966 W IB2006001966 W IB 2006001966W WO 2007010361 A2 WO2007010361 A2 WO 2007010361A2
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WIPO (PCT)
Prior art keywords
metal
flexible substrate
mems device
package
mems
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Ceased
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PCT/IB2006/001966
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English (en)
French (fr)
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WO2007010361A3 (en
WO2007010361A8 (en
Inventor
Zhe Wang
Yubo Miao
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Silicon Matrix Pte Ltd
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Silicon Matrix Pte Ltd
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Priority to JP2008520981A priority Critical patent/JP4853975B2/ja
Priority to KR1020087003563A priority patent/KR101295979B1/ko
Publication of WO2007010361A2 publication Critical patent/WO2007010361A2/en
Publication of WO2007010361A3 publication Critical patent/WO2007010361A3/en
Anticipated expiration legal-status Critical
Publication of WO2007010361A8 publication Critical patent/WO2007010361A8/en
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/12—Containers or parts thereof characterised by their shape
    • H10W76/15—Containers comprising an insulating or insulated base
    • H10W76/157—Containers comprising an insulating or insulated base having interconnections parallel to the insulating or insulated base
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
    • B81C1/0023—Packaging together an electronic processing unit die and a micromechanical structure die
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00309—Processes for packaging MEMS devices suitable for fluid transfer from the MEMS out of the package or vice versa, e.g. transfer of liquid, gas, sound
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/20—Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/688—Flexible insulating substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0257—Microphones or microspeakers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/681—Shapes or dispositions thereof comprising holes not having chips therein, e.g. for outgassing, underfilling or bond wire passage
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07554—Controlling the environment, e.g. atmosphere composition or temperature changes in dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Definitions

  • the invention relates to processes for packaging MEMS devices, and MEMS packages produced using the method, and more particularly, to a method of packaging MEMS devices using a flexible, foldable substrate.
  • MEMS Micro-electro-mechanical systems
  • MEMS Micro-electro-mechanical systems
  • systero-in-packags techniques attempt to form an entire microsystem - which could include a microprocessor, communications components, actuators and sensors - within a single package.
  • packaging of a MEMS device is totally different from packaging an integrated circuit.
  • MEMS devices are categorically different from ICs despite sharing some fundamental processing technologies. Packaging is the biggest challenge for commercializing most MEMS devices.
  • the term 'MEMS package is used in ibis document to imply a package including at least one MEMS device.
  • a MEMS device might function perfectly well in the controlled environment in which it was created. However, the device can be a real viable product only after it has been packaged with proven performance in a package. For example, the packaging stress can distort the sensitivity and the performance of the MEMS devices. MEMS devices include delicate movable structures which are easily damaged through fabrication and assembly processes. As such, the assembly yield of a MEMS package is ofteo a challenging target to meet.
  • MEMS devices The packaging requirements of MEMS devices are complex because the devices need to interact with the physical phenomenon and yet the devices need to be protected from the environment. As such, exotic package structures with specialized assembly techniques and unique packaging materials are employed for MEMS devices. Packaging is usually responsible for at least 60 percent of tine cost of a MEMS device, and sometimes as much as 85 percent Thus, it has been recognized that a low cost packaging solution with robust assembly ts needed to promote ttie use of MEMS devices,
  • a post-molded package can be used for ICs or wafer capped accelcrometers, while a pre-molded package can he used for a pressure sensor or microphone packaging.
  • the plastic package offers a low cost packaging option.
  • the required mold tooling is often expensive and time consuming, making it inflexible to meet fast changing needs from end-users' applications.
  • Others key issues are that the plastic has very poor matching of thermal expansion with silicon and is also susceptible to
  • Wafer level packaging Is a niche method for MEMS packaging. It involves an extra fabrication process where a micromachined wafer is bonded to a second wafer which has appropriate cavities etched into it Once bonded, the second wafer creates a, protective silicon cap over the micro-machine structure. This method leaves the microstracttire free to move within a vacuum or a ⁇ inert gas atmosphere. The bond is hermetic and therefore prevents moisture contamination and hence failure of the m ⁇ crostructure, WLP is discussed in "Considerations for MEMS packaging", Biye Wang. Proceedings of the Sixth IEEE CPMT Conference on High Density Microsystem Design and Packaging and Component Failure Analysis. 30 June-3 July 2004, pp, 160-163 and "Overview and development trends to the field of MEMS packaging", H. Reich] et al, The: 14tb IEEE International Conference on Micro Electro. Mechanical Systems, 21-25 Jan 2001, pp. 1-5.
  • U.S. Patent 6,781,2Sl to Mmervini and U.S. Patent Application No. 2002/0102004 Al to Minervini discloses a MEMS microphone package in which a MEMS transducer element, an IC die and other capacitor components are located on a first multi-layer FR4 printed circuit board (PCB).
  • a second multi-layer FR4 PCB is used as a cover.
  • the two FR4 boards are spaced apart by a third FR4 board, which is cut to include a window which is placed around the components on the first PCB.
  • the three PCBs cooperate to house and shield the transducer element, the JC die and other capacitor components.
  • the two substrates are then joined mechanically in parallel with a spacer element between them and connected electrically by electrical connecting elements.
  • the substrates sandwich the spacer element, the electrical connecting elements, the MEMS device and the one or ai ⁇ re electronic components between them.
  • the advantage of tins method is that the process of mounting the MEMS device can be dealt with and perforjmed separately frotn the process for mounting other 1C and electronics components, thus making the assembly easier and higher yield.
  • interconnecting the two substrates is a challenging task.
  • a principal object of lhc present invention is to provide an effective and very manufacturablie method of producing a MBMS package incorporating a MEMS device and one or more other electronic circuits.
  • Another object of the invention is to provide a MEMS packages.
  • Yet another object of the invention is to provide a method of producing a MEMS package using a flexible and foldable substrate.
  • a furtfter object of the invention is to provide a MEMS package including a flexible and foidab ⁇ e substrate.
  • a still further object is to provide a method of producing a MEMS package including a combination of a flexible and foldablfi substrate and a rigid substrate.
  • a still further object is to provide a MEMS package including a combination flexible and foldable substrate and a rigid substrate.
  • Yet another object is to provide a method of producing a MEMS package including a multiply folded flexible substrate.
  • Yet anoiher object is to provide a MEMS package including a multiply folded flexible substrate.
  • a MEMS package is achieved.
  • the MEMS package has at least one MEMS device located on a flexible substrate.
  • ⁇ metal structure surrounds the at; least one MEMS device wherein a bottom surface of the metal structure is attached to the flexible substrate and wherein the flexible substrate is folded over a top surface of the metal structure and attached to the top surface of the metal structure thereby forming the MEMS package.
  • the metal structure can be in the form of a metal cap or a metal ring.
  • a method of producing a MBMS package is achieved, ⁇ least one MFMS device is mounted onto a flexible substrate. A bottom surface of a metal structure is attached to the flexible substrate surrounding the at least one MEMS device. The flexible substrate is folded over a top surface of the metal structure and attached to the top surface of the metal structure thereby forming the MEMS package.
  • rigid portions of a rigid-flex substrate may be located over or under the flexible substrate in top and bottom portions of the package.
  • the flexible substrate may be folded from more than one side.
  • FIGs. 1 and 2 schematically illustrate in cross-sectional representation steps in a first preferred embodiment of lhe present invention.
  • Figs. 3A and 3B schematically illustrate in cross-sectional representation two alternatives in the first preferred embodiment of the present invention.
  • Fig. 4 schematically illustrates in cross-sectional representation another step in the first preferred embodiment of the present invention.
  • Fig, 5 schematically illustrates in cross-sectional representation surface mounting of the packaged MEMS device according to the first preferred embodiment of the present invention.
  • Figs, 6A, 7 A, and 8 schematically illustrate in top view the front side of the flexible substrate of the invention
  • Fig- 6B and Fig.8 are the cross sectional cutting lines K-F', based on which Figs. 1 -5 are drawn.
  • Figs. 6B and 7B schematically illustrate in top view the back side of the flexible substrate of the invention.
  • FIGs. 9 and 10 schematically illustrate in cross-sectional representation a second preferred embodiment of the present invention.
  • Fig, 11 schematically illustrates In cross-sectional representation surface mounting of the packaged MEMS device according to the second preferred embodiment of the present invention.
  • Figs. 12 and 13 schematically illustrate in cross-sectional representation a third preferred embodiment of the present invention.
  • FIG. 14 schematically illustrates in cross-sectional representation a fourth preferred embodiment of the present invention.
  • Figs. 15 and 16 illustrate in top view the fourth preferred embodiment of the present invention.
  • Also indicated m Figs. 15 and 16 are Ihe cross sectional cutting lines F-F' , based on which Figs. 14 and 17 are drawn.
  • Fig. 17 schematically illustrates in cross-sectional representation a fourth preferred embodiment of the present invention.
  • the present invention proposes a method for packaging a MEMS device as well as one or more electronic components (typically, an application specific IC (ASIC) and one or more passive components).
  • the MEMS device and 1C device are first assembled on a flexible substrate which has an elongated portion.
  • the MEMS device is wirebonded directly to the ⁇ C devjce to minimize parasitic effects,
  • a metal cap is applied to encapsulate the devices, or in ihe alternative, a metal ring surrounds the devices.
  • the elongated portion of the flexible substrate is folded over the metal cap or ring and attached on the top of the metal cap or ring to complete the package.
  • the metal cap or ring and the metal layer on the flexible subslfate are electrically connected to form a Faraday cage for electroraigration (EMI) and radio frequency (RF) shielding.
  • EMI electroraigration
  • RF radio frequency
  • a first preferred embodiment of the invention is illustrated in Figs.1 through 8.
  • a second preferred embodiment of the invention is illustrated in Figs. 9-1 1.
  • a third preferred embodiment of the invention is illustrated in Figs, 12- 13.
  • a fourth preferred embodiment of the invention is illustrated in Figs. 14-17. It will be understood by those skilled in the art that the invention should not be limited to the MEMS microphone device illustrated in the drawing figures, but that the invention, can be applied to many other applications for packaging other types of MEMS device such as pressure sensors, acceler ⁇ raeters, gyroscopes, and so on, or other MEMS devices which may be proposed in the future
  • a double metal layer (2ML) flexible substrate of the present invention is formed of the core film layer 24 and copper metal layers 22 and 26 on both sides.
  • the core film layer may be polyimide, polyethylene polyimide (PET), poly tetra fluoro ethylene (PTFE), or liquid crystal polymer (LCP).
  • PET polyethylene polyimide
  • PTFE poly tetra fluoro ethylene
  • LCP liquid crystal polymer
  • solder resistive layer such as a coverlay or photosensitive epoxy whicjh is patterned with exposures on wire bonding and electrical joining areas. This layer is shown in the top view in Figs- 7 A and 7B.
  • the polyimide layer 24 is between about 12,5 and 100 ⁇ m. in thickness.
  • a core film of the flexible substrate 10 has a much lower modulus (typically 5 GPa) than a FR-4 printed circuit board (PCB) (typically 25 GPa), and so offers stress relaxation and minimizes the interaction of packaging stress or environmentally induced stress with a MEMS device mounted on it.
  • the flexible substrate 10 includes an opening 11, known as aft environmental hole. TMs may be a circular or square-shaped opening that allows external fluid, acoustic energy or pressure to mteracx with the MEMS device to be mounted thereover.
  • the opening 1 i also serves as a via hole connecting the metals on both sides.
  • the flexible substrate 10 includes an elongated portion 12.
  • Metal layers 22 and 26 are joined to the lop and bottom of the flexible core film layer 24 using adhesive or adhesive-less laminating techniques.
  • Metal layers 22 and 26 are preferably copper, having a metal surface for wirebonding, such as soft gold.
  • the copper layer is typically 25 ⁇ m in thickness, but can be more or less, depending on the application.
  • the surface finish metal can be Ni/Au, where the nickel layer is about 3 ⁇ m thick and the overlying gold layer has a minimum thickness of about 0.35 ⁇ m.
  • Fig. 6 A shows a top view of tine top side of the flexible substrate 1.0.
  • the top metal layer 22 has been formed and patterned on the polyimide materia! 24, as shown.
  • Top metal layer 22 comprises copper with plated Ni/ Au thereover.
  • Fig. 6B shows a top view of the bottom side of the flexible substrate 10, showing bottom metal layer 26, also comprising copper with plated NVAu.
  • the cross sectional figures follow line F-F' shown in Fig. 6B and Fig. 8.
  • solder mask or solder resist 28 is now formed OR the metal surfaces 22 and 26.
  • the patterned solder resist will prevent soldering on this area.
  • the solder resist may be a coverlay or photosensitive epoxy and have a thickness of about 10-40 ⁇ m.
  • the patterned solder resist is shown on the top side in Fig, 7A and on the bottom side in Fig. 7B.
  • the patterned solder resist is not shown in the cross-seclionaJ view, but it is understood to be there as shown in Figs, 7A and 7B.
  • vias 30, plated and plugged as interlayer interconnects, as shown in Fig. 6B The vias will be connected to surface mount pads that are later connected to an external printed circuit board, for example, as described hereinafter. Openings 32 in the metal layer are also shown in Figs. 1 and 6B. It is critical to the inveoation that the surface mount pads will be positioned on the opposite side of the package from The environment hole 1 1. Note that the hole 11 also serves as a via to interconnect layer 22 and layer 26.
  • the passive components, the MEMS devices and the IC devices are mounted onto the flexible substrate 10.
  • one MEMS device 40, one integrated circuit device 42, and one passive device 48 are illustrated.
  • the MEMS package of the invention comprises at least one MEMS device, but that more than one MEMS device may be included.
  • One or more electronic components, such as 1C 42, typically, an application specific IC (ASIC) and one or more passive components such as a capacitor, resistor, inductor, or other passive device may be included in the package.
  • Fig. 8 shows a Cop view of the flexible substrate w ⁇ th assembled components.
  • the MEMS device 40 is attached to the flexible substrate 10 with an adhesive 36.
  • a low modulus adhesive would be preferred for stress relaxation such as a silicone based adhesive.
  • Any IC device 42 is attached to the flexible substrate 10 using an adhesive in a die-attach process.
  • Any passive device 48 is attached to the flexible substrate by a surface mounting technique (SMT).
  • SMT surface mounting technique
  • the TC device 42 is then wire-bonded by wires 44 and 46 to a bond pad 45 on the MEMS device 40 and to pad 47, respectively.
  • pad 47 may be for connection of the IC to VDD or OUT.
  • an adhesive layer 52 is placed on the elongated portion 12 of the flexible substrate.
  • the adhesive 52 may be a film, tape, or liquid paste.
  • a metal cap 54 is attached to the flexible substrate by a conductive adhesive or solder 50.
  • the metal cap 54 is attached to the flexible substrate by a conductive adhesive or solder 50.
  • the adhesive layer 52 is placed on top of the metal cap 54.
  • the metal cap may comprise copper, a copper alloy, an aluminum alloy, an iron alloy with solderable metal finish, a plastic with a metal finish formed by either eleciroless plating or painting, or a conductive composite formed by either injection molding or transfer molding.
  • the metal cap 54 may be attached to the flexible substrate with a conductive adhesive, a solder (eutectic PbSn or any lead-free SnAg, SnAgCu), or a combination of a conductive adhesive or solder with a non-conductive adhesive .
  • the soldering attachment may be done by using a solder reflow or hot bar method.
  • the metal cap encapsulates all the devices on the flexible substrate.
  • the metal cap 54 and the metal layer 26 on the flexible substrate 10 are electrically connected to form a Faraday cage for EMI/RF shielding.
  • the elongated portion 12 of the flexible substrate 10 is folded over the metal cap 54 and attached to the metal cap by the adhesive 52. It can be seen that the OUT pad 60;, VDD pad 62, and GND pad 64 are located on an opposite side of the package from the environment hole 11. This is important in the next step in which the packaged MEMS device is surface mounted to an application PCB, for example.
  • Fig. 5 illustrates the packaged MEMS device 70.
  • An application PCB 80 is shown having pads 82 for connection with the MEMS package 70.
  • the MEMS package 70 is surface mounted on the PCB 80 by solder bumps 72, for example. Flux generated by the solder reflow process would he detrimental to the MEMS device. Since the environment hole is located on the opposite side of the package 70 from the pads 60, 62, and 64, the flux will have much less chance to enter the environment hole to damage the MEMS device.
  • the second embodiment of the present invention will be described with reference to Figs. 9- 10. The second embodiment begins in the same way as illustrated io Figs. 1 and 2.
  • the MEMS devices and other electronic devices are m ⁇ urjled onto the flexible substrate 10.
  • a metal ring 56 is placed on the flexible substrate 10 to surround the devices 40, 42, and 48.
  • the metal ring 56 is attached to the flexible substrate with a conductive adhesive, a solder (e ⁇ tectic PbSn or any lead-free SnAg, SnAgCu), or a combination of a conductive adhesive or solder with a non-conductive adhesive.
  • the soldering attachment may be done by using a solder reflow or hot bar method.
  • the elongated portion. 12 of the flexible substrate 10 is folded over the metal ring 56 and attached to the metal ring by an adhesive 55.
  • all vias are made in the sidewall to interconnect the electrical Ieadouts on the frontside metal 22 to the VDD and OUT pads on the backside metal layer 26.
  • via 36 and the openings on the metal layers 34 and 35 are shown.
  • the packaged MEMS device is surface mounted to an application PCB, for example.
  • the metal ring 56 along with the metal layers 22 and 26 on the top and bottom of the flexible substrate are electrically connected to form a Faraday cage for EM1/RF shielding.
  • Fig. 11 illustrates the packaged MEMS device 71.
  • An application PCB 80 is shown having pads 82 for connection with the MEMS package 71.
  • the MEMS package 71 is surface mounted on the PCB 80 by solder bumps 72, for example. Flux generated by the solder reflow process would be detrimental to the MEMS device. Since the environment hole is located on the opposite side of the package 7 ) from the pads 60, 62, and 64, the flux will have much less chance to enter the environment hole to damage the MEMS device.
  • the package structure 70 or 71 of the present invention also offers further miniaturization feasibility. This is because its thickness in the z-axis (Le. the up-down direction in Figs. 4 and 10) is reduced by the use of the flexible substrate !0 which typically has a substrate thickness of about 0.1mm or smaller.
  • a rigid substrate is combined with the flexible substrate of the invention.
  • a rigid FR-4 substrate is used, "FR" weans Flame Retardant and Type "4" indicates woven glass reinforced epoxy resin.
  • Fig. 12 illustrates rigid FR-4 layer 100 laminated to portions of the flexible substrate 10 underlying the components and at the portion of the substrate that will overlie the components after folding.
  • Fig. 13 shows the package after folding. MeIaJ ring 56 Is shown, A metal cap could alternatively be used in this embodiment.
  • Fig. 15 shows the top view of the top side of the substrate
  • Fig. 16 shows the top view of the bottom side of the substrate
  • the flexible substrate is folded at two sides.
  • the metal cap or metal ring is used in this embodiment.
  • Fig. 17 shows the package after folding.
  • the present invention provides MEMS packages using flexible substrates and methods of manufacturing these packages.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Micromachines (AREA)
  • Gyroscopes (AREA)
  • Structure Of Printed Boards (AREA)
PCT/IB2006/001966 2005-07-15 2006-07-17 A mems package using flexible substrates, and method thereof Ceased WO2007010361A2 (en)

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KR1020087003563A KR101295979B1 (ko) 2005-07-15 2006-07-17 Ｍｅｍｓ 패키지 및 ｍｅｍｓ 패키지 제조 방법

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US7692288B2 (en) 2010-04-06
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US7202552B2 (en) 2007-04-10
KR101295979B1 (ko) 2013-08-13
US20070013052A1 (en) 2007-01-18
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WO2007010361A8 (en) 2008-03-06
US20070013036A1 (en) 2007-01-18

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