Classifications

• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
  • C09D9/00—Chemical paint or ink removers
  • C09D9/005—Chemical paint or ink removers containing organic solvents
• • C—CHEMISTRY; METALLURGY
  • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
  • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
  • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
  • C11D7/22—Organic compounds
  • C11D7/26—Organic compounds containing oxygen
  • C11D7/267—Heterocyclic compounds
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/26—Processing photosensitive materials; Apparatus therefor
  • G03F7/34—Imagewise removal by selective transfer, e.g. peeling away
  • G03F7/343—Lamination or delamination methods or apparatus for photolitographic photosensitive material
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/26—Processing photosensitive materials; Apparatus therefor
  • G03F7/42—Stripping or agents therefor
  • G03F7/422—Stripping or agents therefor using liquids only
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02041—Cleaning
  • H01L21/02057—Cleaning during device manufacture
• • C—CHEMISTRY; METALLURGY
  • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
  • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
  • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
  • C11D2111/10—Objects to be cleaned
  • C11D2111/14—Hard surfaces
  • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Definitions

• the present invention relates to a release agent for removing an organic film adhering to a substrate for surface cleaning of a substrate for an electronic device, a method for removing an organic film using the release agent, and a removal method. Relates to the device.
• the present invention particularly relates to a release agent useful for removing a photoresist film used in processing of a semiconductor wafer or a liquid crystal substrate, a method for removing a photoresist film using the release agent, and a removal method. Relates to the device.
• Patent Document 1 Japanese Patent Application Laid-Open No. 2003-203856
• Patent Document 2 Japanese Patent Laid-Open No. 2003-305418
• Patent Document 3 Japanese Patent Laid-Open No. 2003-330206
• An object of the present invention is to provide a release agent that is easy to handle and excellent in release performance. Specifically, it is a release agent that is liquid at room temperature, and it can remove the resist film at a high release rate, and it is sufficiently productive even if it is a resist film that has been altered by ion implantation and is difficult to peel off. Providing a stripping agent that can be removed at a high speed and with a high stripping rate, and that does not degrade the stripping performance of the resist film even after repeated use, and a resist film stripping method and stripping device. There is to do.
• an organic coating release agent characterized by containing 20 wt% or more of ⁇ -petit-mouthed rataton.
• the present invention also provides a method for removing an organic film, characterized in that the organic film is removed by bringing the organic film remover into contact with a substrate having an organic film on the surface.
• a mixed release agent storage tank for introducing a new release agent solution and introducing a treated release agent
• F. means for discharging the release agent that dissolves the organic coating from the contact tank;
• G. A device for removing an organic film on a substrate surface having an organic film is also provided, characterized in that it has means for circulating the release agent discharged from the contact tank and returning it to the mixed release agent storage tank.
• FIG. 1 shows an example of an organic coating film removal apparatus of the present invention, and is an overall view when no ozone-containing gas is used.
• FIG. 2 shows an example of the organic coating film removing apparatus of the present invention, and is an overall view when an ozone-containing gas is used.
• the release agent of the present invention is a release agent that uses ⁇ -petit-mouth rataton, which has not been attempted to be used for stripping and removing a resist film, and ⁇ -petit-mouth rataton alone, Alternatively, it is a mixed solvent of ⁇ _petit-mouth rataton and a compatible liquid.
• the mixed solvent of the petit-mouthed ratataton and the liquid compatible with the y-petit-mouthed ratataton contains at least 20% by weight of the petit-mouthed rataton.
• y-Buchiguchi Rataton is a colorless liquid at room temperature with a melting point of _45 ° C, a boiling point of 204 ° C, and a flash point of 98 ° C. It is water-soluble and can be used as an aprotic polar solvent.
• the liquid compatible with y-petit-mouth rataton preferably has a boiling point of 60 ° C or higher.
• liquids include alcohols such as ethanol and isopropanol, ethers such as polyethylene glycol, alkylene carbonates such as ethylene carbonate, propylene carbonate and vinylene carbonate, and aromatic hydrocarbons such as toluene and xylene.
• ethers such as polyethylene glycol
• alkylene carbonates such as ethylene carbonate, propylene carbonate and vinylene carbonate
• aromatic hydrocarbons such as toluene and xylene.
• ethylene carbonate melting point 36.4 ° C, boiling point 238 ° C, flash point 160 ° C
• propylene carbonate melting point— 48 ⁇ 8 ° C, boiling point 242 ° C, flash point 160 ° C or higher.
• water can also be used.
• ⁇ -petit-mouth rataton When ⁇ -petit-mouth rataton is used alone as a release agent, it has excellent resist film solubility and low-temperature release performance, but its flash point is slightly lower, so handle with care when using it. is required. If the processing temperature is likely to exceed the flash point of ⁇ — Petit Mouth Rataton, use a mixture of ⁇ — Petit Mouth Rataton and a liquid compatible with ⁇ — Petit Mouth Rataton. Thus, the boiling point and flash point of the mixed liquid can be increased. It is preferable that ⁇ petit rataton in the mixture is 20% by weight or more.
• the ratio of monolatato ratatones in the release agent is less than 20% by weight, the performance of removing the resist film is reduced. If it exceeds 90% by weight, the effect of increasing the boiling point and flash point is reduced.
• the ratio of ⁇ _petit-mouth rataton in the release agent is more preferably 50% by weight or more and 80% by weight or less.
• the release agent of the present invention is effective for removing a photoresist at a high temperature, and the effective temperature range is 0 to 200 ° C (y_100 to 100 ° C in the case of using petit petit rataton alone). In consideration of the use below the flash point, it is preferably 30 to 150 ° C. (30 to 90 ° C. in the case of using y_petit-mouth rataton alone).
• the release agent can be safely operated in the atmosphere if the temperature at the time of treatment is below the flash point, or it can be wet treated at about 200 ° C if it is in an inert gas. There is no problem. When processing at high temperature, the amount of evaporation of the release agent is slightly increased. The toxicity of the steam is low, so this is not a problem. If necessary, the steam can be discharged using a draft.
• a release agent comprising a liquid mixture of ⁇ -butyrolatatone, ⁇ -butyrolatatane and ethylene carbonate and / or propylene carbonate, or a liquid mixture of ⁇ -petit-latataton and water is excellent in wide use temperature range. It has an organic film removal performance.
• the photoresist stripping ability of the stripping agent of the present invention is a modified resist film in which ions are implanted at 1 ⁇ 10 15 / cm 2 or more, which has been very difficult with the conventional wet stripping method, which is larger as the processing temperature is higher. However, it can be peeled off in a short time.
• a liquid mixture of ⁇ -petit-mouth rataton and ethylene carbonate (1: 1 by weight) for example, even a 2 ⁇ m-thick modified resist film can be removed by treatment at 120 ° C for 2 minutes. .
• the above-described peeling mechanism of the resist film is considered to be mainly due to dissolution of the resist main component.
• the release agent of the present invention has a very high dissolving power at a high temperature, but has a sufficiently practical dissolving power even at a low temperature of 30 ° C. Dissolution is a diffusion phenomenon and becomes faster as the concentration difference is larger. Therefore, when a liquid film is formed on the surface of the object to be treated and a new release agent is supplied to the liquid film and moved continuously, the liquid film is moved. Therefore, the dissolution effect can be further improved.
• the release agent of the present invention can easily remove an oil film such as dioctyl phthalate (D0P), which is an organic contamination film on the substrate surface, and at the same time adheres to the surface with these oil films. Contaminated particulates can also be removed. In addition, it is also suitable for removing the oil film of the processing oil on the substrate surface after machining or the coating film on the metal surface.
• D0P dioctyl phthalate
• the release agent of the present invention is usually removed by heating the release agent, but it should also be used when it is necessary to carry out the treatment under room temperature or slight heating conditions due to the nature of the substrate. Is possible. In particular, it can be suitably used at a temperature of 35 ° C or lower at which ethylene carbonate solidifies.
• ⁇ petit mouth rataton alone or a mixture of ⁇ petit mouth rataton and a liquid compatible with ⁇ petit mouth rattan effectively removes and removes an organic film such as a photoresist film.
• the release agent after the treatment contains dissolved (and dispersed) components derived from the organic film.
• the organic film is peeled off visually.
• ⁇ -Butyrolatatone has better solubility of this organic coating than ethylene carbonate or propylene carbonate, which is conventionally known as a release agent. Therefore, the treated release agent is peeled off without any treatment. It can be reused as an agent.
• the conventional release agent causes problems such as generation of a residue when used repeatedly several times or more.
• the release agent of the present invention hardly generates a residue even when used repeatedly 20 times or more. Can be reused. Therefore, the release agent of the present invention does not need to be subjected to ozone treatment in order to be reused after treatment, but it is preferable to perform ozone treatment because it has the following advantages.
• the dissolved resist in the release agent after the above treatment is decomposed into a low molecular weight substance in a short time by passing ozone gas of 50 ° C or lower.
• ozone gas of 50 ° C or lower.
• the y-petit-mouth rataton alone or a mixture of ⁇ _petit-mouth rataton and a liquid compatible with ⁇ _petit-mouthed ratataton is substantially chemically unaffected by this ozone gas flow, and It has been found that the removal and removal performance of resist and the like does not deteriorate. Therefore, if ozone gas is passed through the stripping agent after the organic film removal treatment, it can be reused as a stripping stripper for removing resist or the like by removing it as it is or by filtering it as necessary.
• the liquid compatible with ⁇ -petit rataton is preferably ethylene carbonate and / or propylene carbonate. Removing the resist after stripping the resist with ozone to decompose the resist components and micro-filtering to remove the decomposed material can increase the number of times that the stripper can be used repeatedly without replacing it with a new one. Become.
• the ventilation rate and the ventilation time of ozone gas are not particularly limited, but vary depending on the type of resist to be peeled off and the process conditions. In reality, it is determined by judging the degree of decomposition of the organic film based on the point that the resist is visually decomposed and the color disappears, conductivity, transmittance, UV absorption, and CPC analysis.
• the release agent after the organic film removal treatment described above is treated with ozone gas to regenerate and recycle the release agent.
• ozone gas is preferably used for stripping after the ozone gas concentration in the liquid is dissolved to the upper limit, that is, the saturated dissolution amount.
• the release agent consisting of a liquid mixture of y-buchi-mouth rataton or ⁇ _butyrolataton and ethylene carbonate or propylene carbonate has a high boiling point, so it is rinsed with a new release agent, a release agent, and spin-dried.
• a new release agent a release agent
• spin-dried there is a high possibility that these molecular films will remain adsorbed on the wafer surface. If the release agent remains on the wafer, the physical properties (especially electrical properties) of the processed substrate will be adversely affected. There is a possibility of drowning. Therefore, it is desirable to continue rinsing with ultrapure water.
• the organic film to be peeled in the present invention is a photoresist film which is unnecessary at the end of the photolithographic process of the electronic material substrate.
• positive resists such as phenol novolac resists, talesol novolac resists, burphenol derivative resists, polymetatalylate resists, cyclized polyisoprene derivative resist negative resists, and the like.
• a positive resist that is not three-dimensionally crosslinked is preferred.
• the release agent of the present invention is optionally used by dissolving ozone gas, whereby an organic film on the surface of the substrate, for example, an ion-implanted resist film that conventionally required ashing, etc. Can be removed in a very short time and efficiently.
• the stripping agent of the present invention is easy to handle because it is a liquid at room temperature, and it can be applied even in processing under high temperature conditions because of its high boiling point and flash point resist solubility at low temperatures. There are few environmental problems with high nature.
• the present invention can be applied to remove a general organic film such as an oil film or a paint film on a substrate.
• a release agent in order to remove the organic coating on the substrate surface, a release agent is brought into contact with the organic coating.
• a method of contact such as a method in which a substrate with an organic coating is dissolved by immersing it in a stripping solution, a method in which a stripping solution is sprayed on the organic coating on the substrate, a method of washing and flowing, a stripping solution It is possible to exemplify the method of applying an organic coating in the vapor of the water and exposing the substrate. In addition, it is advantageous to increase the removal rate of the organic coating by acting on the organic coating on the substrate by stirring, vibrating, shaking, or publishing the release agent solution.
• the release agent of the present invention is circulated using a circulation device and re-applied. It is economically preferable to use it.
• Example [0029] An outline of the organic film removing apparatus and the removing method in the present embodiment will be described below. First, an apparatus for removing the organic film on the substrate surface by circulating the release agent of the present invention will be described with reference to the accompanying drawings. .
• FIG. 1 shows a case where no ozone-containing gas is used, and the release agent of the present invention is prepared and stored in a new solution storage tank 1 for the release agent.
• the release agent is supplied from the mixed release agent storage tank 2 to the contact tank 4 via the pipe 3.
• the release agent accumulates in the contact tank 4, the substrate having the organic film is taken out from the substrate holder 5 and is put into the contact tank 4, and the substrate is immersed in the release agent.
• the substrate is lifted from the release agent and taken out from the contact tank 4.
• a means for taking out the substrate having the organic coating from the substrate holder 5 and immersing it in the release agent, and lifting the substrate from the release agent in the next step manually using an instrument that can sandwich the substrate, for example, tweezers or the like. Can be done. It can also be performed manually or automatically using a device capable of performing such an operation, for example, a robot arm as described in JP-A-2003-203856.
• the stripping agent containing the organic film-derived component is discharged from the pipeline 6 and circulated back to the storage tank 2 for the mixed stripping agent.
• Organic in the release agent that circulates by removing a part of the release agent containing components derived from the organic coating continuously or intermittently from the pipeline 6 and supplying new solution from the new release agent storage tank 1 Do not increase the concentration of ingredients derived from the coating.
• Fig. 2 shows a case where an ozone-containing gas is used.
• ozone may be introduced into the release agent from the pipe 7 in some cases.
• the stripping agent containing the component derived from the organic film discharged from the pipe 6 is sent to the ozone-containing gas contact tank 8.
• Ozone-containing gas contact tank 8 is supplied with ozone-containing gas from line 9, and is bunched in a release agent containing components derived from the discharged organic film, and is contained in the release agent. Is decomposed into low molecular weight substances.
• Stripping agent containing degraded low molecular weight material is discharged from line 10. Remove and circulate back to storage tank 2 for mixed release agent.
• a stripping agent containing a component derived from an organic coating is continuously or intermittently withdrawn from the pipeline 6 to the outside of the system. Avoid increasing the concentration of low molecular weight substances.
• the ozone gas used in the examples has an ozone concentration of about 250 mgZL obtained by flowing oxygen containing 0.4% nitrogen in a discharge-type ozone generator for about 2 to 10LZ.
• ⁇ ⁇ -Platinata Lataton and propylene carbonate were of a reagent-grade purity, and ethylene carbonate was a high-purity product manufactured by Toagosei Co., Ltd.
• a quartz glass cassette containing five 10 cm square glass substrates was immersed in a quartz glass release agent tank (hereinafter referred to as tank jar) filled with 3 L of ⁇ -petit-mouth rataton. After soaking for a certain period of time, it was then soaked for a certain period of time in a spray rinse bath (hereinafter referred to as bath ⁇ ) filled with fresh ⁇ _butyrolatatatone. Furthermore, it was immersed in an overflow rinse tank (hereinafter referred to as tank C) with ultrapure water to complete the resist stripping.
• tank jar quartz glass release agent tank
• tank C overflow rinse tank
• the resist peeling effect of ⁇ -petit-mouth rataton with a liquid temperature of 60 ° C was investigated.
• the sample used was a novolac resin-based positive resist for I-line (trade name: PR-200, manufactured by Shipley) with a film thickness of 4 ⁇ m on the surface of a 10 cm square glass substrate, and beta for 140 seconds at 140 ° C. It is a thing. First, one of these was placed in a cassette, and 250 mg / L high-concentration ozone gas was published at 2 L / min for 5 minutes in ⁇ -butyrolatatone in tank A, and ozone was dissolved in a 60 ° C solution.
• the cassette was immersed in the liquid, and the resist peeling state was observed with the naked eye. As a result, it was confirmed that peeling was completed within 10 seconds after immersion. The peel rate was 24 x m / min.
• the cassette is pulled up and sprayed with ⁇ -Buchiguchi Rataton spray rinsing for 2 seconds in tank B, followed by 3 minutes of overflow rinsing with ultrapure water in tank C, followed by spin drying and observation of the surface with a microscope. As a result, no part was peeled off. In the examples and comparative examples, the cassette was dipped and pulled up manually.
• Example 2 When a cassette of one sample was immersed in the tank A without venting ozone in the same manner as in Example 1, peeling was completed with the naked eye in 15 seconds (peeling speed: 16 ⁇ m / min). It was shown that resist stripping can be performed in a sufficiently short time even without passing high ozone gas at 60 ° C. The solution after resist removal turned pale yellow.
• Exfoliation performance was examined in the same manner as in the case of ozone gas ventilation described in Example 1, except that the temperature of the tank tub—the small- mouth rataton was changed to 80 ° C. under the same processing conditions as in Example 1. As a result, it was confirmed by the naked eye that peeling was completed in 6 seconds. The peeling speed at this time was 40 xm / min. Immediately after that, the cassette is pulled up, and ⁇ -petit-mouth rataton spray rinsing is performed in a tank ⁇ for 2 seconds, then an overflow rinse of ultrapure water is performed in tank C for 3 minutes, spin dried, and the surface is observed with a microscope. As a result, the part that was not peeled off was not observed.
• the experiment was performed in the same manner as in Example 2 except that the temperature of the ⁇ -petit-mouth rataton in the tank was 80 ° C. As a result of observing the resist peeling condition with the naked eye after immersing the cassette in the release agent, it was confirmed that the peeling was completed in 7 seconds. The peeling rate at this time was 34 ⁇ m / min. Immediately after that, the cassette is pulled up, and ⁇ -butyrorataton spray rinsing is performed for 2 seconds in tank B, then overflow rinsing is performed for 3 minutes in tank C, spin-dried, and the surface is observed with a microscope. As a result, the part which was not peeled was not recognized.
• Example 2 In the same treatment method as in Example 1, the liquid mixture of ⁇ -petit ratatone and ethylene carbonate (1: 1 by weight) was used as the treatment liquid at a liquid temperature of 100 ° C. Similarly, peeling performance was examined.
• the cassette was immersed in a stripping agent and the resist stripping condition was observed with the naked eye. As a result, it was confirmed that stripping was completed in 4 seconds. The peeling speed at this time was 60 xm / min. Then straight Next, the cassette is pulled up and spray rinsed with a liquid mixture of gamma-petite rataton and ethylene carbonate (1: 1 by weight) in tank B for 2 seconds, and then an overflow rinse of ultrapure water in tank C. After 3 minutes, spin drying and observing the surface with a microscope, no unpeeled part was observed.
• Example 5 An experiment was conducted in the same manner as in Example 5 except that ozone gas was not passed. As a result of observing the resist peeling condition with the naked eye by immersing the cassette in a release agent, it was confirmed that the peeling was completed in 3 seconds. The peeling speed at this time was 80 ⁇ m / min. Immediately after that, the cassette is pulled up and sprayed with a ⁇ _petit-mouth rataton liquid spray rinse for 2 seconds in a tank ⁇ , and then an ultrapure water overflow rinse is performed for 3 minutes in the tank C. As a result of observation, no unpeeled portion was observed.
• a novolac resin-based positive resist product name: PR-200, manufactured by Shipley
• PR-200 manufactured by Shipley
• Tank A was not ventilated with ozone, the temperature in tank A was increased to 120 ° C, and 1 x 10 14 / cm 2 and 1 x 10 15 / cm 2 injected samples were placed in each cassette. The resist was peeled off and observed with the naked eye. The resist film was completely removed in 1 minute for the former and 2 minutes for the latter. The stripping rates were 2 ⁇ mZ and 1 ⁇ mZ, respectively, which were practically usable.
• Example 7 the same release test as in Example 7 was performed using the regenerated release agent, and it was found that the resist film was completely removed in 1 minute and the release agent was reusable.
• Example 3 After applying a resist film to the substrate, an experiment similar to that in Example 3 was performed using a sample that was subjected to post-beta treatment at 140 ° C for about 3 minutes. As a result, the resist was a novolak resin-based positive resist, chemically amplified type. The stripping rate was 20 ⁇ m / min or more regardless of whether the polybutanol derivative positive resist or the cyclized polyisoprene negative resist was used.
• the release agent was neutral, the metal films for wiring such as Al, Mo, W, Ti, and IT ⁇ were not attacked.
• C1-based and Br-based gases are used for dry etching of aluminum films.
• these corrosive gases remain on the resist film and the altered film on the side wall of the force zone, and cannot be removed even by ashing. Therefore, subsequent wet processing is required.
• the resist When the aluminum film is dry-etched with a C1-based reactive gas, the resist is usually removed by ashing, and the target is a novolac resin-based positive resist, which is close to the actual device pattern.
• the formed TEG wafer was prepared as a sample.
• the film thickness of the resist is l z m.
• Example 2 20% by weight of propylene carbonate was added to y-petit-mouthed rataton, and the same procedure as in Example 1 was performed. Exfoliation was sufficient and the exfoliation rate was 23 x m / min.
• the present invention can be used to remove an organic coating adhering to a substrate in order to clean the surface of an electronic device substrate or the like.
• the present invention is useful for removing a photoresist film used for processing a semiconductor wafer or a liquid crystal substrate, and is particularly suitable for resist removal in an ultrafine pattern device.
• the present invention can be applied to the removal of general organic coatings such as oil films and coatings on a substrate.

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• 2006
  • 2006-02-21 WO PCT/JP2006/303019 patent/WO2006132008A1/ja active Application Filing
  • 2006-02-21 JP JP2007520027A patent/JPWO2006132008A1/ja active Pending
  • 2006-02-21 KR KR1020077030430A patent/KR20080016682A/ko not_active Application Discontinuation
  • 2006-03-16 TW TW095108924A patent/TW200643658A/zh unknown

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