WO2006006370A1 - 水質評価方法、該方法を用いる超純水評価装置及び超純水製造システム - Google Patents
水質評価方法、該方法を用いる超純水評価装置及び超純水製造システム Download PDFInfo
- Publication number
- WO2006006370A1 WO2006006370A1 PCT/JP2005/011566 JP2005011566W WO2006006370A1 WO 2006006370 A1 WO2006006370 A1 WO 2006006370A1 JP 2005011566 W JP2005011566 W JP 2005011566W WO 2006006370 A1 WO2006006370 A1 WO 2006006370A1
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- Prior art keywords
- water
- ultrapure water
- contact
- ultrapure
- sample
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
- G01N33/18—Water
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F2103/00—Nature of the water, waste water, sewage or sludge to be treated
- C02F2103/02—Non-contaminated water, e.g. for industrial water supply
- C02F2103/04—Non-contaminated water, e.g. for industrial water supply for obtaining ultra-pure water
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F2209/00—Controlling or monitoring parameters in water treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
Definitions
- the present invention relates to a water quality evaluation method. More specifically, a water quality evaluation method for evaluating water quality such as etching properties of ultrapure water used as cleaning water for manufacturing semiconductors and liquid crystals in a simple and highly sensitive manner using the influence on high-purity silicon substances as an index,
- the present invention relates to an ultrapure water evaluation apparatus and an ultrapure water production system using the method.
- Ultrapure water used for semiconductor and liquid crystal manufacturing needs to stably supply water with extremely low impurity concentration.
- sample water is collected and the concentration of impurities is measured using a highly sensitive analyzer to confirm the water quality.
- impurities in ultrapure water can be measured by electrical methods. Items that can be indexed and a water quality monitor that can analyze impurities directly have been installed at the outlet of ultrapure water production equipment to monitor the water quality. Yes. For example, measuring instruments such as resistivity meters (resistivity meters), TOC meters, and silica meters have been used.
- resistivity meters resistivity meters
- TOC meters TOC meters
- silica meters silica meters
- concentration of impurities contained in extremely low water as in recent ultrapure water
- conventional water quality monitoring is insufficient, and high-sensitivity analysis by sampling is essential.
- the concentration of metallic elements, such as N a Ya F e must be measured extremely low concentration of 1 ppt, for which the water quality monitor that can respond not present, unless the high sensitivity analysis by sampling It must be.
- amines eluted from ion exchange resins and separation membranes may be mixed during the production process. It is known that when a silicon wafer is cleaned using ultrapure water mixed with amines, an undesirable etching action is caused in the rinsing process. Conventionally, in order to confirm this etching action, for example, a method of observing the surface of a silicon wafer with a scanning electron microscope after being immersed in ultrapure water to be evaluated has been used. However, in this method, There were problems such as the need for advanced techniques for handling scanning electron microscopes, and the time required for measurement being too long.
- Japanese Patent Application Laid-Open No. 2 0 0 1-2 0 8 7 4 8 describes a method for evaluating the quality of ultrapure water used for cleaning silicon wafers by contacting a silicon wafer with sample water and introducing impurities in the sample water.
- a water quality evaluation method has been proposed in which water is attached to a wafer, the adhering impurities are eluted, and the impurities are analyzed.
- this method is intended to measure fine particles and metal impurities in the sample water, and cannot evaluate the etchability of the sample water.
- the present invention is simple with the degree of influence on high-purity silicon substances as an index, especially for the quality of water such as etching properties of ultrapure water used as cleaning water for semiconductors and liquid crystal manufacturing.
- the objective is to provide a water quality evaluation method for highly sensitive evaluation.
- the present invention is made for the purpose of providing an ultrapure water evaluation apparatus using the water quality evaluation method and an ultrapure water production system including the ultrapure water evaluation apparatus.
- the water quality evaluation method comprises contacting sample water with a high-purity silicon substance, measuring a physical property value correlated with the silica concentration contained in the sample water after contact with the high-purity silicon substance, The water quality of the sample water is evaluated based on a physical property value that correlates with the silica concentration, which is changed by contact with the substance.
- the water quality evaluation method according to the present invention is the water quality evaluation method described above, wherein the sample water is brought into contact with a high-purity silicon substance, and the silica concentration contained in the sample water after contact with the high-purity silicon substance is measured. Calculating an increase in the Siri force concentration relative to the silica concentration contained in the sample water before contact with the high-purity silicon substance, and evaluating the quality of the sample water based on the increase in the silica concentration It is characterized by.
- the water quality evaluation method according to the present invention is characterized in that, in the above water quality evaluation method, a silicon single crystal or a silicon polycrystal is used as the high-purity silicon substance.
- the water quality evaluation method according to the present invention is characterized in that, in the above water quality evaluation method, the sample water brought into contact with the high-purity silicon substance is ultrapure water.
- the ultrapure water evaluation apparatus is used in any of the above-described water quality evaluation methods, has a sample water passage port and a sample water discharge port, and contains a high-purity silicon substance therein. It is characterized by comprising a hornworm insect container to be loaded and a silica measuring device for measuring the concentration of siri force in the sample water discharged from the outlet.
- the ultrapure water production system includes an ultrapure water production device, an ultrapure water use point, an ultrapure water feed pipe from the ultrapure water production device to a use point and an ultrapure water return from the use point. It is constituted by piping, and the above-mentioned ultrapure water evaluation device is provided at any position of the final outlet of the ultrapure water production device, the ultrapure water feed piping, or the ultrapure water return piping. Yes.
- the water quality evaluation method of the present invention and the ultrapure water evaluation apparatus using the water quality evaluation method are provided by contacting sample water, particularly ultrapure water, with a high purity silicon substance and measuring the silica concentration in the ultrapure water. Since it is possible to easily determine whether or not this ultrapure water has the property of etching the surface of a silicon wafer, it is extremely useful for preventing problems in semiconductor manufacturing. It is effective.
- the ultrapure water evaluation device of the present invention is equipped with a sampling device at any position, such as immediately after the ultrapure water production device, in the production device, in the middle of supply piping to the factory, etc. Can be carried out quickly, helping to elucidate the causes of semiconductor manufacturing defects and their sources, and contribute greatly to the solution.
- the increase in silicon concentration in the ultrapure water is used as an index.
- semiconductor manufacturing can be maintained stably.
- an abnormality occurs in the water quality, it can be detected before the result is obtained in the actual process, and measures can be taken before damage increases.
- FIG. 1 shows an embodiment of a first embodiment of an ultrapure water production system using the ultrapure water evaluation apparatus of the present invention.
- FIG. 2 (A) is a cross-sectional view of a silicon hornworm container constituting the ultrapure water evaluation apparatus of the present invention used in the ultrapure water production system shown in FIG.
- FIG. 2 (B) is a perspective view of the bottom plate 20 of the silicon contact container of FIG. 2 (A).
- ionic silica gionate
- This ionic silica reacts with molybdate ions to form a key molybdate complex, and the complex absorbs light having a wavelength of about 4400 nm, or the reduced form of the complex is 8 8 0 It is known to absorb light of the order of nm, and the silica concentration is analyzed using this property.
- the above Siri force concentration analysis method and its analysis device it can be used after contact with high purity silicon materials such as silicon wafer fragments or high purity silicon crystals. If the silica concentration in ultrapure water is measured and compared with the siri force concentration before contact with the substance, the silica concentration increased by contact with the substance can be measured.
- a silicon polycrystal can be used as the high purity silicon material.
- a silicon wafer is preferably used as the high-purity silicon material.
- ICP-MS inductively coupled plasma-mass spectrometer
- GF-AA graphite furnace atomic absorption spectrometer
- physical quantities that can monitor changes in silica concentration can be used to analyze the silica concentration in the sample water. For example, even if it is a physical property value such as electrical resistance, it can be used as a parameter to detect changes in silica concentration by measuring the electrical resistance if other conditions such as ion concentration are constant. be able to.
- sample water particularly ultrapure water is brought into contact with a high-purity silicon substance, and the silica concentration in the ultrapure water is measured, so that the ultrapure water etches the silicon wafer surface. Therefore, it is very effective in preventing the occurrence of defects in semiconductor manufacturing.
- the ultrapure water evaluation apparatus using the water quality evaluation method of the present invention described above has a sample water inlet and a sample water outlet, a contact container in which high-purity silicon material is loaded, and a discharge from the outlet. And a silica measuring device for measuring the silica concentration in the sample water.
- the ultrapure water evaluation apparatus of the present invention described above includes, as one embodiment, an ultrapure water feed pipe from an ultrapure water production apparatus to a useboy ⁇ and an ultrapure water return pipe from a usepoin ⁇ .
- a silicon contact vessel for water quality evaluation and a silica measuring device can be connected.
- the silica measuring device may be connected to a silicon contact vessel, and sample water contacted with silicon in the silicon contact vessel may be introduced into the silica measuring device to measure the silica concentration. It may be prepared in a separate place from the container, and the sample water that has come into contact with the silicon in the silicon contact container may be collected in a water collection container, transported to a place with a silica measuring device, and measured with the silica measuring device. When measuring the silica concentration before contacting with silicon, the sample water upstream of the silicon contact vessel may be introduced and supplied to the siri force measuring device.
- the silicon contact container constituting the ultrapure water evaluation apparatus is configured to detect or measure impurities in the sample water by contacting the sample water with the semiconductor substrate and then analyzing the surface of the substrate.
- a holding substrate for a semiconductor substrate used in the evaluation method, in which the semiconductor substrate is detachably accommodated and held, a sample water supply port, a sample water discharge port, and a surface of the semiconductor substrate Use a device equipped with a cleaning solution supply means to clean the
- the ultrapure water evaluation apparatus of the present invention is suitably used in an ultrapure water production processing apparatus provided with a subsystem that further purifies pure water supplied from a primary pure water production apparatus and supplies it to a use point.
- the primary pure water production apparatus constituting the ultrapure water production treatment apparatus includes a condensation precipitation apparatus, a sand filter, an activated carbon filter, a reverse osmosis membrane apparatus, an ultraviolet irradiation apparatus, a degassing that performs vacuum degassing or nitrogen gas degassing.
- a device, a catalyst degassing device, a non-regenerative ion exchange device, etc. are appropriately selected according to the quality of the raw water and are arranged in an arbitrary order.
- the subsystem is formed by appropriately combining an ultraviolet sterilizer, a mixed bed desalinator, an ultrafiltration membrane (UF) device, and the like.
- branch pipes are installed in advance at necessary locations.For example, immediately after the exit of the ultrapure water production equipment, in the vicinity of the use point, or at a position where the use point returns to the ultra pure water production equipment. Install one or more branch pipes. In order to sufficiently exhibit the effects of the present invention, the branch pipes are preferably provided at three locations. Further, the ultrapure water evaluation apparatus of the present invention can be attached to the branch pipe every time the water quality is evaluated, but it is preferable to install it permanently so that the water quality can be immediately evaluated in an emergency.
- the contact between the sample water and the high-purity silicon substance is, for example, by continuously supplying the sample water into the contact container loaded with the high-purity silicon substance, and then supplying the supplied sample water to the silica connected to the contact container. It can be carried out by supplying continuously or intermittently to a measuring device or a water sampling container.
- the contact conditions in this case can be set arbitrarily, and set specific conditions such as the amount of high-purity silicon material or the number of silicon wafers to be filled, the surface area of the silicon, the amount of water per unit time, and the contact time. can do. For example, it is preferable to supply sample water such as ultrapure water at 1 L / min to one 6-inch silicon wafer.
- the water quality evaluation should be possible or take some countermeasures by measuring the increase in the squeezing force concentration of the sample water based on the preset contact conditions and comparing it with a predetermined allowable increase. Determine whether. For example, in the evaluation of the quality of ultrapure water produced by a certain ultrapure water production system, conditions are first set as described above, and ultrapure water as standard water with acceptable water quality under the same conditions. After that, the silica concentration of the sample water is measured every time, and if there is a case where the silica concentration rises above the allowable value, it is not considered as ultrapure water. Judge as eligible. In addition, by making the contact conditions between the sample water and the high-purity silicon substance constant, it is possible to evaluate each of the ultrapure water supplied from the ultrapure water production equipment provided at different locations. .
- the increase in silica concentration can be determined as the increase in silica concentration from the difference in silica concentration before and after measuring the silica concentration before and after the hornworm with silicon. In this case, if the silica concentration of normal ultrapure water is known, the measurement of the silica concentration before contact can be omitted. The allowable value of the silica concentration varies depending on the contact conditions and the purpose of use of ultrapure water, but if the increase in the silica concentration exceeds 0.5 PP b, measures should be taken.
- the increase in the silica concentration exceeds the allowable value, a warning is issued and then the use of the ultrapure water is stopped to eliminate the cause of water quality deterioration in the ultrapure water production system.
- ammine mixed in ultrapure water is considered to have been dissolved from ion exchange resin, etc., so water quality can be recovered by replacing it with ion exchange resin that has been prevented from elution.
- the quality of ultrapure water can be evaluated not only periodically, for example once every Z month, but also at any time, such as when a problem occurs.
- FIG. 1 shows an embodiment of an ultrapure water production system using the ultrapure water evaluation apparatus of the present invention.
- the ultrapure water production system 1 includes an ultrapure water production apparatus comprising a primary pure water production apparatus and subsystems, a use point for ultrapure water, and ultrapure water from the ultrapure water production apparatus to a point of use. It consists of feed piping and ultrapure water return piping from the use point.
- sample water outlets are attached to the final outlet of the subsystem and three places before and after the use point, and clean branch pipes 4 a, Connect the ultrapure water evaluation device 2a, 2b, 2c consisting of the silicon contact container of the present invention and the silica measurement device at 4b and 4c, and always supply sample water to each ultrapure water evaluation device. It was possible to supply.
- a known pure water production apparatus is used as the primary pure water production apparatus constituting the ultrapure water production system.
- the subsystem in FIG. It consists of an outer filtration membrane device and an ion exchange resin tower in sequence.
- the silicon contact containers constituting the ultrapure water evaluation devices 2a, 2b, 2c of the present invention used in the ultrapure water production system 1 of FIG. 1 are shown in FIGS. 2 (A) and (B). Show.
- the silicon contact container of FIG. 2 includes an upper lid 10 and a bottom plate 20 in which a circular depression 21 on the upper surface is closed by the upper lid.
- the outer shape of the upper lid 10 and the bottom plate 20 is circular, for example, and a water supply port 11 is provided at the center of the upper lid, and a drainage port 2 2 is provided at the center of the bottom plate 20.
- Positioning protrusions 23 are provided on the peripheral edge of the upper surface of the bottom plate 20 at equal intervals in the circumferential direction.
- a recess for receiving the positioning protrusions is provided on the peripheral edge of the lower surface of the upper lid. . Therefore, when the upper lid is placed on the upper surface of the bottom plate and the concave portion of the upper lid is fitted into the positioning protrusion 23, the upper lid correctly overlaps the bottom plate and closes the upper surface of the circular recess 21 of the bottom plate.
- the inner diameter of the circular depression 21 on the bottom plate is sufficiently larger than the diameter of the wafer W to be held, and the upper end of the drainage opening 22 is opened at the center of the bottom of the depression.
- Bottom of dent 2 1 On the surface, a plurality of radial ridges 24 in the circumferential direction are protruded at equal intervals in the circumferential direction.
- the inner end of this paraboloid bowl 24 is located around the drain port 22, and the outer end is spaced apart from the inner peripheral surface of the recess 21 inward.
- the wafer W is held horizontally on the plurality of radial ridges 24. Therefore, a step-like support base 25 having a step 26 on which the peripheral edge of the wafer is placed is provided on the outer end portion of each ridge.
- the step in step 26 corresponds to the thickness of the wafer (approximately 0.6 mm).
- a support portion 27 that supports the lower surface of the wafer in the radial direction is provided on the intermediate portion of each rod
- a Mt. Fuji-shaped water passage recess 12 connected to the lower end of the water supply port 11.
- the inner diameter of the water-passing recess 12 is equal to the inner diameter of the circular recess 21 in the bottom plate.
- the concave portion for water flow 1 2 is called Mt. Fuji in the cross-sectional shape, with the bottom surface of the concave portion 1 2 facing outward in the radial direction, on the upper surface of the wafer W supported horizontally on the stepped support base 25. It gradually approaches.
- the water that has reached the peripheral edge 2 1 ′ of the bottom of the recess flows through the gap between the bottom of the recess 2 1 and the lower surface of the wafer lifted by the radial ridge toward the central drain port 2 2, It flows out from the outlet 2 2.
- the water supply port 1 1 on the top lid and the drain port 2 2 on the bottom panel are screwed in to shut off the outside air and the inside of the container.When carrying the container outside the clean room, the valve is closed, and Open only when making contact. It is preferable to use a three-way valve (switching between raw water—inside container and raw water—discharge) 1 3 as the valve provided at the water supply port 1 1.
- valve 13 Before contacting the container with water, the valve 13 can be switched to “Raw water—Drain” so that water can flow without putting water into the container. There is an effect that the road can be washed.
- the valve 28 provided at the drain outlet 2 2 may be a two-way valve for opening and closing.
- synthetic resin that is relatively easy to process and durable is used.
- An example of such a synthetic resin is an acrylic resin.
- a column-type contact container may be used as the silicon contact container.
- a predetermined amount of silicon material is filled on the water collecting plate in the power ram, sample water is supplied from above the packing, and sample water that has been contacted is discharged from below the packing.
- Constituent material is water and Any material can be used as long as it is extremely small even if it comes into contact, and acrylic resin is preferred.
- the quality of ultrapure water was evaluated by the following method to determine whether or not the ultrapure water produced by the ultrapure water production system in Fig. 1 has the property of etching the silicon wafer surface.
- one 6-inch silicon wafer manufactured by a semiconductor manufacturing apparatus is prepared, and the silicon wafer is cleaned with a dilute hydrofluoric acid aqueous solution having a concentration of 0.5 o / o and formed on the surface of the silicon wafer.
- the natural oxide film was removed.
- ultrapure water produced by the ultrapure water production system shown in FIG. 1 is flowed at a flow rate of 1 L Zm ⁇ . Water was passed through the contact container for 60 minutes.
- Ultrapure water hereinafter referred to as the “silicon contact vessel” in Fig. 2
- sample water for analysis (sample water for analysis”. ) was collected in the water collection container from the outlet of the silicon contact container. The sample water for analysis was concentrated by ion chromatography, and the silica concentration was measured by measuring the absorbance of the molybdenum complex in the sample water after the concentration.
- the siri force concentration contained in the sample water for analysis was 0.8 p pb.
- the silica concentration was measured in the same manner as in the above measurement method, and found to be 0.3 ppb. From this result, it can be seen that the produced ultrapure water has an increase in silica concentration of 0.5 ppb due to silicon wafer contact.
- a silicon wafer washed with a dilute hydrofluoric acid aqueous solution having a concentration of 0.5 ⁇ 1 ⁇ 2 was placed in the silicon contact container shown in FIG.
- tetramethylammonium hydroxide is added to the ultrapure water produced by the ultrapure water production system shown in Fig. 1, and the sample water is prepared so that the tetramethylammonium hydroxide concentration becomes 10 ppb. did.
- This sample water was passed through the silicon contact container for 60 minutes and collected in the collection container as sample water for analysis.
- the silica concentration was measured in the same manner as in the water quality evaluation test 1 described above. As a result, it was found that the silica concentration increased by 3.5 ppb due to the silicon wafer contact.
- the silicon wafers used in each of the above water quality evaluation tests 1 to 3 were observed at a magnification of 300,000 using a scanning electron microscope (SEM).
- the finished silicon wafer surface was flat.
- the silicon wafer surface used in the water quality evaluation tests 2 and 3 had irregularities and the surface was considerably rough.
- the allowable range for the etching properties is the range where the increase in silica concentration is 0.5 ppb or less, and the silica after contact with high-purity silicon material It was confirmed that measures should be taken when the increase in concentration exceeds 0.5 ppb.
- a silica measuring device for measuring the silica concentration in the sample water discharged from the sample water outlet of the acrylic column is connected to the acrylic column as a silicon contact vessel. It is constituted by.
- the ultrapure water production system of the second embodiment is configured by connecting the ultrapure water evaluation device of the second embodiment in the ultrapure water production system shown in FIG.
- the acryl column as the silicon contact vessel is a column made of acrylic resin having an inner diameter of 25 mm and provided with a sample water passage and a sample water outlet.
- the outlet of the acrylic column is connected to a silica measuring device, and the silica concentration in the sample water that has passed through the inside of the acrylic column is measured by this silica measuring device.
- the silica measuring device concentrates the sample water by ion chromatography, This is a device having a function of measuring the silica concentration by measuring the absorbance of the molybdenum complex in the concentrated sample water.
- a silicon wafer fragment crushed to about 1 mm to 1 O mm was packed into an acrylic column as a silicon contact container to a thickness of about 5 O mm.
- a dilute hydrofluoric acid aqueous solution having a concentration of 0.5 ⁇ 1 ⁇ 2 is passed through the acryl column to wash the filled silicon wafer fragments, and the natural oxidation formed on the surface of the silicon wafer fragments
- the inside of the acrylic column was thoroughly washed by removing the membrane and passing ultrapure water through the acrylic column.
- ultrapure water is produced using the ultrapure water production system of the second embodiment, and the produced ultrapure water is used.
- the Siri force concentration was continuously measured by using the ultrapure water evaluation apparatus constituting the ultrapure water production system.
- the produced ultrapure water has a high silica concentration of 1.5 to 2. O ppb.
- the increase in silica concentration after contact with high-purity silicon material is 0.5 PP b or less, but the lower limit of the silica concentration is large, so it is desirable to take measures.
- ultra pure water was produced by replacing the ion exchange resin of the ultra pure water production system of the second example with a new one.
- the silica concentration of the produced ultrapure water was 0. It was found to be stable at a low level of 5 to 1. O ppb. In this case, the upper limit of the siri force concentration was small, and the increase in the silica concentration after contact with the high-purity silicon material was also less than 0.5 ppb.
- the water quality evaluation method of the present invention and the ultrapure water evaluation apparatus that uses the water quality evaluation method include contacting sample water, particularly ultrapure water, with high-purity silicon material, and silica in the ultrapure water. By measuring the concentration, it can be easily determined whether or not this ultrapure water has the property of etching the surface of the silicon wafer, which is extremely effective in preventing problems in semiconductor manufacturing.
- the increase in silicon concentration in the ultrapure water is used as an index.
- semiconductor manufacturing can be maintained stably.
- an abnormality occurs in the water quality, it can be detected before the result is obtained in the actual process, and measures can be taken before damage increases.
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JP7054995B2 (ja) * | 2017-07-12 | 2022-04-15 | オルガノ株式会社 | 超純水の評価方法、超純水製造用膜モジュールの評価方法及び超純水製造用イオン交換樹脂の評価方法 |
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JP2001208748A (ja) * | 2000-01-25 | 2001-08-03 | Kurita Water Ind Ltd | 半導体基板の保持容器 |
JP2003098092A (ja) * | 2001-09-27 | 2003-04-03 | Suga Test Instr Co Ltd | シリカ濃度自動測定装置 |
Cited By (4)
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AU2010247151B2 (en) * | 2009-05-14 | 2015-10-22 | Thornton & Ross Limited | A method and composition for the control of ectoparasites |
US9862534B2 (en) | 2013-07-15 | 2018-01-09 | Bbbprojects B.V. | Dispenser and method for dispensing prismatic tablets |
CN104597045A (zh) * | 2015-01-09 | 2015-05-06 | 上海绿帝环保科技有限公司 | 一种水质重金属检测剂的制备和使用方法 |
CN104597045B (zh) * | 2015-01-09 | 2017-07-21 | 上海绿帝环保科技有限公司 | 一种水质总重金属检测剂的制备和使用方法 |
Also Published As
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JP2006029880A (ja) | 2006-02-02 |
JP4543799B2 (ja) | 2010-09-15 |
TW200602636A (en) | 2006-01-16 |
TWI372864B (en) | 2012-09-21 |
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