WO2010013586A1 - ケイ素濃度測定装置 - Google Patents
ケイ素濃度測定装置 Download PDFInfo
- Publication number
- WO2010013586A1 WO2010013586A1 PCT/JP2009/062321 JP2009062321W WO2010013586A1 WO 2010013586 A1 WO2010013586 A1 WO 2010013586A1 JP 2009062321 W JP2009062321 W JP 2009062321W WO 2010013586 A1 WO2010013586 A1 WO 2010013586A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- light
- phosphoric acid
- silicon
- concentrated phosphoric
- hot concentrated
- Prior art date
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/645—Specially adapted constructive features of fluorimeters
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N21/49—Scattering, i.e. diffuse reflection within a body or fluid
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N21/49—Scattering, i.e. diffuse reflection within a body or fluid
- G01N21/53—Scattering, i.e. diffuse reflection within a body or fluid within a flowing fluid, e.g. smoke
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N2021/4704—Angular selective
- G01N2021/4707—Forward scatter; Low angle scatter
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N2021/4704—Angular selective
- G01N2021/4709—Backscatter
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N2021/6417—Spectrofluorimetric devices
- G01N2021/6421—Measuring at two or more wavelengths
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N2021/6491—Measuring fluorescence and transmission; Correcting inner filter effect
- G01N2021/6493—Measuring fluorescence and transmission; Correcting inner filter effect by alternating fluorescence/transmission or fluorescence/reflection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/85—Investigating moving fluids or granular solids
- G01N2021/8557—Special shaping of flow, e.g. using a by-pass line, jet flow, curtain flow
Definitions
- the present invention relates to a silicon concentration measuring apparatus that detects a small amount of silicon contained in a test solution by a simple means.
- a nitride film (Si 3 N 4 film) is used as a mask for forming an element isolation oxide film (SiO 2 film) by a LOCOS (LoCal Oxidation of Silicon) method on a silicon semiconductor wafer.
- LOCOS LiCal Oxidation of Silicon
- a so-called wet etching method using heated concentrated phosphoric acid is generally used.
- wet etching is performed by immersing a silicon semiconductor wafer on which a nitride film and an oxide film are patterned in a cleaning tank in which hot concentrated phosphoric acid is circulated, and dissolving and removing only the nitride film.
- the device is known.
- silica silicon compound
- Silica remains dissolved in hot concentrated phosphoric acid at a low concentration, but is thought to precipitate when the silica concentration increases and becomes supersaturated by repeatedly using hot concentrated phosphoric acid for the nitride film removal treatment. Then, the silica deposited in the hot concentrated phosphoric acid is deposited on the inner wall of the hot concentrated phosphoric acid circulation system pipe including a pump, a filter and the like, thereby causing a problem of inhibiting the circulation.
- atomic absorption spectrometry Inductively coupled plasma (ICP) emission spectrometry, and ICP mass spectrometry are used as direct quantitative methods.
- ICP inductively coupled plasma
- mass spectrometry In general, in order to measure such trace components with high sensitivity, atomic absorption spectrometry, inductively coupled plasma (ICP) emission spectrometry, and ICP mass spectrometry are used as direct quantitative methods.
- these analyzers are large and expensive, and are not suitable for simple measurement.
- the molybdenum blue method is known as a chemical analysis method for trace components, but it is not appropriate because phosphoric acid becomes an interfering substance when trying to measure the silica concentration in hot concentrated phosphoric acid.
- hot concentrated phosphoric acid has a concentration of 85% and a temperature of 160 ° C.
- the hot concentrated phosphoric acid is sampled from a wet etching apparatus and is brought to near room temperature. Although it is necessary to cool, there is a problem that the temperature condition is greatly different from that of an actual process, and a long time is required for measurement.
- the present invention is intended to provide a silicon concentration measuring device that detects a small amount of silicon contained in a test solution by a simple means.
- the silicon concentration measuring apparatus is an apparatus for measuring a silicon concentration in a test solution, wherein the test solution is irradiated with an excitation light irradiation unit that irradiates excitation light for silicon, and the excitation light is irradiated.
- a light detection unit that detects fluorescence and / or scattered light emitted from silicon in the test solution, and a calculation unit that calculates the silicon concentration in the test solution from the intensity of the fluorescence and / or scattered light. It is characterized by having.
- silicon that is a measurement target of the present invention is considered to exist as a compound of silicon and oxygen in a test solution, and in particular, may exist as an oxide of silicon such as silicon dioxide. It is thought that there are many.
- Silica emits fluorescence in the ultraviolet to visible light region in either an ionic or colloidal state.
- wet etching equipment that uses hot concentrated phosphoric acid generally uses piping made of fluororesin or quartz piping with high light transmission in the ultraviolet to visible light region as piping for supply or circulation. Is done.
- silica is fluorescent or various scattered light such as forward scattered light and back scattered light with respect to hot concentrated phosphoric acid flowing inside the pipe from the outside of these pipes.
- the silica in hot concentrated phosphoric acid emits fluorescence by irradiating light with a wavelength that emits as excitation light, and the concentration of silica present in the hot concentrated phosphoric acid is quantified by measuring the intensity of the fluorescence. be able to.
- hot concentrated phosphoric acid flowing in the pipe of the wet etching apparatus can be used as a test solution, so that measurement can be performed under conditions (temperature, etc.) closer to the actual process. Therefore, accurate and quick measurement is possible. Furthermore, according to the present invention, it is possible to manage the concentration of hot concentrated phosphoric acid continuously in real time, so that it is possible to perform appropriate operation management such as etching rate and regeneration management of hot concentrated phosphoric acid.
- the excitation light irradiating unit or the light detecting unit includes a waveguide such as an optical fiber and a light reflecting unit such as a prism. It is preferable to provide a container. In such a case, it is only necessary to install a light reflector directly on the pipe, and light can be transmitted from the light reflector to the light reflector using a waveguide.
- the light source or the light receiver (including the spectroscope) may be installed at a place away from the pipe, and the installation place of the light source or the light receiver can be freely selected.
- the equipment block diagram of the silica concentration measuring apparatus which concerns on one Embodiment of this invention.
- the flowchart which shows the measuring method of the silica density
- the silica concentration measuring apparatus 1 is installed in a pipe L made of a light-transmitting material connected to a chemical tank T that stores hot concentrated phosphoric acid, and the silica concentration in the hot concentrated phosphoric acid is determined.
- an excitation light irradiation unit 2 that irradiates hot concentrated phosphoric acid with excitation light
- a light detection unit 3 that receives light emitted from silica in the hot concentrated phosphoric acid
- an information processing device 4 that functions as a calculation unit 41 or the like that calculates the silica concentration in the hot concentrated phosphoric acid from the intensity of light.
- the excitation light irradiation unit 2 includes a light source 21 including a xenon lamp or an ultraviolet LED, an optical fiber 22, and a prism 23, and transmits light emitted from the light source 21 to the pipe L through the optical fiber 22. Then, the transmitted excitation light is totally reflected by the prism 23 and irradiated to the hot concentrated phosphoric acid flowing through the pipe L.
- the excitation light is, for example, light having a wavelength of 180 to 1200 nm, and preferably light having a wavelength of 180 to 460 nm.
- the light detection unit 3 includes a light receiver 31, a spectroscope 32, an optical fiber 33, and a prism 34, and totally reflects fluorescence and various scattered light emitted from the silica in hot concentrated phosphoric acid. Then, light transmitted through the optical fiber 33 and spectrally separated by the spectroscope 32, for example, light having a wavelength of 180 to 720 nm, preferably 180 to 500 nm, is received by the light receiver 31 to detect the light emission amount. is there.
- the wavelength which detects fluorescence and various scattered light is not limited to this range, It fluctuates depending on the wavelength of excitation light.
- the information processing apparatus 4 is a general-purpose or dedicated device including a memory 402, an input / output channel 403, an input unit 404 such as a keyboard, an output unit 405 such as a display, etc. in addition to the CPU 401.
- the input / output channel 403 is connected to an analog-digital conversion circuit such as an A / D converter 406, a D / A converter 407, and an amplifier (not shown).
- the information processing apparatus 4 stores a predetermined program in the memory 402, and operates the CPU 401 and its peripheral devices in cooperation with each other according to the program so that the functions as the calculation unit 41, the concentration display unit 42, and the like are exhibited. It is configured.
- the calculation unit 41 calculates the silica concentration in the hot concentrated phosphoric acid by performing a predetermined calculation process on the light emission amount of 180 to 720 nm emitted from the silica.
- the concentration display unit 42 acquires the silica concentration data calculated by the calculation unit 41 and displays it as characters or images.
- the emitted excitation light is introduced into the optical fiber 22 and transmitted to the prism 23 provided at the tip of the optical fiber 22 (step S1).
- the excitation light transmitted to the prism 23 is totally reflected by the prism 23, changes its traveling direction, and is irradiated to the hot concentrated phosphoric acid that passes through the light-transmitting pipe L wall and circulates through the inside (step). S2).
- the fluorescent light and various scattered light are transmitted through the wall of the pipe L, totally reflected by the prism 34, introduced into the optical fiber 33, transmitted to the spectroscope 32, and split by the spectroscope 32 (step S4).
- the light receiver 31 receives the dispersed fluorescence and various scattered lights, and transmits an electrical signal corresponding to the light emission amount (step S5).
- the calculation unit 41 receives an electric signal from the light receiver 31, performs a predetermined calculation process based on the electric signal data, and calculates the silica concentration in the hot concentrated phosphoric acid (step S6).
- the concentration display unit 42 acquires the silica concentration data from the calculation unit 41 and displays it as characters or images (step S7).
- the silica concentration measuring apparatus 1 configured as described above, it is not necessary to collect hot concentrated phosphoric acid as a test solution when quantifying the silica concentration in the hot concentrated phosphoric acid. As a result, it is possible to avoid the risk of coming into contact with hot concentrated phosphoric acid, which is a high temperature and strong acid, and it is possible to reduce hot concentrated phosphoric acid and associated waste liquid consumed for measurement.
- hot concentrated phosphoric acid flowing in the pipe L can be used as a test solution, it becomes possible to measure under conditions (temperature, etc.) closer to the actual process. Accurate and quick measurement is possible.
- concentration management of hot concentrated phosphoric acid can be continuously performed in real time, appropriate operation management such as etching rate and regeneration management of hot concentrated phosphoric acid can be performed.
- the prisms 23 and 34 are directly installed in the pipe L, and light can be transmitted to or from the prism 23 using the optical fibers 22 and 33.
- the installation location of the light source 21 or the light receiver 31 can be freely selected, and even when a sufficient space around the pipe L cannot be secured, the silica concentration measuring device 1 can be installed.
- the present invention is not limited to the above embodiment.
- test solution is not limited to hot concentrated phosphoric acid, and can be appropriately selected.
- the waveguide is not limited to an optical fiber, and the light reflector is not limited to a prism.
- One or both of the light source 21 and the light receiver 31 may be installed in the pipe L without the optical fibers 22 and 33 and the prisms 23 and 34 interposed therebetween.
- the optical fibers 22 and 33 are included.
- the space may be further wirelessly connected.
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- Health & Medical Sciences (AREA)
- Biochemistry (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
Description
2・・・励起光照射部
3・・・光検出部
4・・・情報処理装置
41・・・演算部
Claims (3)
- 被検液中のケイ素濃度を測定する装置であって、
前記被検液にケイ素に対する励起光を照射する励起光照射部と、
前記励起光が照射された前記被検液中のケイ素から発する蛍光及び/又は散乱光を検出する光検出部と、
前記蛍光及び/又は散乱光の強度から前記被検液中のケイ素濃度を算出する演算部と、を備えているケイ素濃度測定装置。 - 前記被検液は、リン酸溶液である請求項1記載のケイ素濃度測定装置。
- 前記励起光照射部又は前記光検出部は、導波管と、光反射器と、を備えている請求項1記載のケイ素濃度測定装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/056,801 US20110133099A1 (en) | 2008-07-30 | 2009-07-06 | Silicon concentration measuring instrument |
JP2009533411A JPWO2010013586A1 (ja) | 2008-07-30 | 2009-07-06 | ケイ素濃度測定装置 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008196092 | 2008-07-30 | ||
JP2008-196092 | 2008-07-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2010013586A1 true WO2010013586A1 (ja) | 2010-02-04 |
Family
ID=41610285
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2009/062321 WO2010013586A1 (ja) | 2008-07-30 | 2009-07-06 | ケイ素濃度測定装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20110133099A1 (ja) |
JP (1) | JPWO2010013586A1 (ja) |
KR (1) | KR20110040851A (ja) |
TW (1) | TW201009318A (ja) |
WO (1) | WO2010013586A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011117748A (ja) * | 2009-12-01 | 2011-06-16 | Horiba Advanced Techno Co Ltd | シリカ濃度測定方法及びシリカ濃度測定装置 |
JP2011237227A (ja) * | 2010-05-07 | 2011-11-24 | Marktec Corp | 湿式蛍光磁粉探傷試験に用いる検査液における成分濃度の測定方法および測定装置 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6767442B2 (ja) * | 2018-08-24 | 2020-10-14 | 株式会社東芝 | 測定器、エッチングシステム、シリコン濃度測定方法、及びシリコン濃度測定プログラム |
KR102084044B1 (ko) * | 2018-12-24 | 2020-03-03 | 주식회사 세미부스터 | 인산용액 중의 실리콘 농도 분석방법 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2000088749A (ja) * | 1998-09-14 | 2000-03-31 | Kurabo Ind Ltd | 光学測定用プローブ |
JP2003034520A (ja) * | 2001-07-23 | 2003-02-07 | Dokai Chemical Industries Co Ltd | 結晶化過程を光学的に監視する結晶質シリカ粒子の製造方法 |
JP2003158116A (ja) * | 2001-10-18 | 2003-05-30 | Infineon Technologies Ag | 二酸化ケイ素の含有量を評価する装置 |
JP2004061312A (ja) * | 2002-07-29 | 2004-02-26 | Tohoku Techno Arch Co Ltd | 水中微量成分の測定方法及び装置 |
JP2006029880A (ja) * | 2004-07-14 | 2006-02-02 | Kurita Water Ind Ltd | 水質評価方法、該方法を用いる超純水評価装置及び超純水製造システム |
JP2007108156A (ja) * | 2005-09-14 | 2007-04-26 | Mitsui Chemical Analysis & Consulting Service Inc | 有機珪素化合物中の珪素の定量方法 |
Family Cites Families (5)
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US4708494A (en) * | 1982-08-06 | 1987-11-24 | Marcos Kleinerman | Methods and devices for the optical measurement of temperature with luminescent materials |
DE3688380T2 (de) * | 1985-06-25 | 1993-08-12 | Dow Chemical Co | Verfahren zur messung des lichtabsorptionsvermoegens eines fluessigkeitsmediums. |
DK66992D0 (da) * | 1992-05-21 | 1992-05-21 | Faxe Kalkbrud Aktieselskabet | Sensor |
US6255123B1 (en) * | 1998-11-17 | 2001-07-03 | Kenneth P. Reis | Methods of monitoring and maintaining concentrations of selected species in solutions during semiconductor processing |
EP1724824A3 (en) * | 2005-05-17 | 2010-08-25 | Apprecia Technology Inc. | Equipment and method for measuring silicon concentration in phosphoric acid solution |
-
2009
- 2009-07-06 WO PCT/JP2009/062321 patent/WO2010013586A1/ja active Application Filing
- 2009-07-06 KR KR1020117001524A patent/KR20110040851A/ko not_active Application Discontinuation
- 2009-07-06 JP JP2009533411A patent/JPWO2010013586A1/ja active Pending
- 2009-07-06 US US13/056,801 patent/US20110133099A1/en not_active Abandoned
- 2009-07-14 TW TW098123755A patent/TW201009318A/zh unknown
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000088749A (ja) * | 1998-09-14 | 2000-03-31 | Kurabo Ind Ltd | 光学測定用プローブ |
JP2003034520A (ja) * | 2001-07-23 | 2003-02-07 | Dokai Chemical Industries Co Ltd | 結晶化過程を光学的に監視する結晶質シリカ粒子の製造方法 |
JP2003158116A (ja) * | 2001-10-18 | 2003-05-30 | Infineon Technologies Ag | 二酸化ケイ素の含有量を評価する装置 |
JP2004061312A (ja) * | 2002-07-29 | 2004-02-26 | Tohoku Techno Arch Co Ltd | 水中微量成分の測定方法及び装置 |
JP2006029880A (ja) * | 2004-07-14 | 2006-02-02 | Kurita Water Ind Ltd | 水質評価方法、該方法を用いる超純水評価装置及び超純水製造システム |
JP2007108156A (ja) * | 2005-09-14 | 2007-04-26 | Mitsui Chemical Analysis & Consulting Service Inc | 有機珪素化合物中の珪素の定量方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011117748A (ja) * | 2009-12-01 | 2011-06-16 | Horiba Advanced Techno Co Ltd | シリカ濃度測定方法及びシリカ濃度測定装置 |
JP2011237227A (ja) * | 2010-05-07 | 2011-11-24 | Marktec Corp | 湿式蛍光磁粉探傷試験に用いる検査液における成分濃度の測定方法および測定装置 |
Also Published As
Publication number | Publication date |
---|---|
US20110133099A1 (en) | 2011-06-09 |
KR20110040851A (ko) | 2011-04-20 |
TW201009318A (en) | 2010-03-01 |
JPWO2010013586A1 (ja) | 2012-01-12 |
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