WO2005122395A1 - 電気機械信号選択素子 - Google Patents
電気機械信号選択素子 Download PDFInfo
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- WO2005122395A1 WO2005122395A1 PCT/JP2005/010790 JP2005010790W WO2005122395A1 WO 2005122395 A1 WO2005122395 A1 WO 2005122395A1 JP 2005010790 W JP2005010790 W JP 2005010790W WO 2005122395 A1 WO2005122395 A1 WO 2005122395A1
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- Prior art keywords
- signal selection
- micro
- selection device
- oscillator
- electromechanical
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
- H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
- H03H9/2447—Beam resonators
- H03H9/2463—Clamped-clamped beam resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/0072—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H9/02259—Driving or detection means
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H2009/02488—Vibration modes
- H03H2009/02496—Horizontal, i.e. parallel to the substrate plane
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H2009/02488—Vibration modes
- H03H2009/02511—Vertical, i.e. perpendicular to the substrate plane
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H2009/02488—Vibration modes
- H03H2009/02527—Combined
Definitions
- the present invention relates to an electromechanical signal selection device including an electromechanical filter, and in particular, the physical property changes due to a structural change in a micro-oscillator serving as a resonator, a mechanism for exciting the same, or a micro-oscillator.
- the present invention relates to an electromechanical signal selection device in which the characteristics of the signal selection device can be adjusted using the following materials.
- the RF-MEMS signal selection element is an electromechanical signal selection element using mechanical vibration of a micro-oscillator.
- the electrical vibration of the high frequency signal is converted to the mechanical vibration of the micro-oscillator and the output signal is taken out again as the electrical vibration, the size of the resonator does not depend on the electrical length. It is mentioned that the device can be miniaturized.
- it can be manufactured in a process that is compatible with RF-IC, it is possible to incorporate a signal selection element in RF-IC, and it is expected as a technology that will greatly contribute to the miniaturization of the wireless unit. .
- Non-Patent Document 1 is an electromechanical signal selection device using a micro-oscillator of GHz band.
- a disk-shaped micro-oscillator is formed on a silicon substrate, and An electromechanical resonator with a center frequency of 1.14 GHz is realized using the mechanical resonance phenomenon of a small oscillator.
- a high frequency signal input from the signal input port to the drive electrode applies an electrostatic force between the drive electrode and the micro oscillator, and the micro oscillator is excited at the frequency of the high frequency signal.
- the micro-oscillator When a signal of the mechanical self-resonant frequency of the micro-oscillator is input, the micro-oscillator is greatly excited and a change in the capacitance due to a change in the distance between the micro-oscillator and the detection electrode occurs. Then, since a voltage is applied to the micro-oscillator, the mechanical vibration of the micro-oscillator is extracted as an electrical vibration by the detection electrode, and a signal is output to the detection electrode force signal output port. That is, it is possible to selectively output only the signal of the frequency set by the self-resonant frequency of the micro-oscillator.
- Non-Patent Document 1 J. Wang, et al, IEEE RFIC Symp., 8-10 June, pp. 335-338, 2003. Disclosure of the Invention
- Non-Patent Document 1 a disk-shaped micro-oscillator having a radius of 20 ⁇ m and a thickness of 2 m is provided between the micro-oscillator and the detection electrode.
- the distance is 10 O nm and is formed by high aspect ratio etching of 3 m depth.
- the voltage applied to the micro-oscillator is 12.9 V to 30.54 V, and at present, the voltage is high for application to wireless terminals.
- the present invention has been made in view of the above situation, and an electromechanical signal selection device capable of selecting and outputting only a signal of a predetermined frequency without providing a high sensitivity vibration detection mechanism and the same Purpose is to provide the same electrical equipment.
- a micro vibrator that is generated when the micro vibrator vibrates at a self-resonant frequency. Changes in physical properties resulting from structural changes in are used in the mechanism of signal selection.
- the electromechanical signal selection device comprises a micro-oscillator which can be excited by an input signal, and a post for holding the micro-oscillator.
- the vibrator is characterized in that the excitation causes a change in physical property, and the selection signal can be changed.
- the micro-oscillator to be a resonator can be excited by an external force, and the use of a material whose physical property changes due to structural change enables signal selection, which is conventionally difficult to realize.
- An electromechanical signal selection device having a signal selection function is realized without providing a highly sensitive vibration detection mechanism.
- the micro-oscillator is not particularly limited in size, but refers to a micrometer-to-nanometer-order vibrator formed by MEMS technology.
- the micro-oscillator includes one made of a material whose physical property changes due to a structural change.
- the physical property includes an electrical conduction characteristic.
- the micro-vibrator includes one held by an electrode placed on the post.
- the bonding surface between the electrode and the micro-oscillator includes one located at a distance from the post.
- the rigidity of the post is lower than the rigidity of the micro-oscillator.
- the micro-oscillator includes a multi-layered structure of at least two layers of a material layer causing a change in the physical property, and a conductor layer.
- the high frequency signal flowing through the conductor layer mainly serves to excite the micro-oscillator, and the high frequency signal flowing through the phase change material layer is responsible for signal selection due to changes in physical properties including electrical conductivity.
- the conductive layer is formed in a linear shape, and the material causing the change in the physical property includes one formed around the linear conductive layer.
- the outside of the micro-oscillator has a larger free surface and is more likely to cause a phase change, and the high-frequency signal flowing through the central conductor layer mainly excites the micro-oscillator.
- the high frequency signal flowing through the phase change material layer may be responsible for signal selection due to changes in physical properties including electrical conduction characteristics.
- the electromechanical signal selection device of the present invention includes one formed on the side where the electric field of the material layer force signal where the change of the physical property occurs is concentrated.
- phase change material layer by forming the phase change material layer on the side where the electric field of the high frequency signal is concentrated, it is possible to increase the signal selection effect due to the change in the electrical conductivity of the phase change material layer.
- the electromechanical signal selection device of the present invention includes a material layer which causes the change of the physical property to be formed below the substrate side of the conductor layer.
- phase change material layer on the substrate ground side where the electric field of the high frequency signal is concentrated, it is possible to enhance the signal selection effect due to the change in the electrical conductivity of the phase change material layer.
- the one half of the diameter of the conductor layer is equal to or less than the skin depth of a high frequency signal.
- the material in which the change in physical property occurs to flow a high frequency signal for exciting the micro-oscillator even in the state of the insulator.
- the frequency increases, there is a property called skin effect that flows near the surface, so even if the diameter of the conductor layer is half that of the diameter of the conductor layer, it has a large signal power attenuation rate less than the skin depth of high frequency signals.
- the micro-oscillator vibrates, and the whole micro-oscillator including the phase change material layer has low resistance!
- the signal may be passed when it is in a crawling state. In this case, at least the size of the radius of the micro-oscillator, and the shape with a small signal power attenuation rate greater than the skin depth of the high frequency signal may be used.
- the micro-oscillator includes a velovskite-type transition metal oxide.
- the porthole buskite type transition metal oxide includes PrNiO exhibiting a metal-insulator transition.
- the micro-oscillator includes one formed of a piezoresistive effect material. Further, in the electromechanical signal selection device according to the present invention, the micro-oscillators are made of Si, La Sr MnO
- It comprises at least one of 1-X X 3 or BaTiO.
- the micro-oscillator includes one composed of a superconductor.
- the superconductor is made of Al, Pb, La Sr CuO
- the micro-oscillator includes one made of a carbon-based material.
- the electromechanical signal selection device of the present invention includes one in which the input signal is covered from an electrode provided on the micro-oscillator.
- the electromechanical signal selection device of the present invention includes one in which the input signal is applied from a drive electrode disposed adjacent to the micro-oscillator.
- the electromechanical signal selection device of the present invention includes one in which the external force applied to the drive electrode is an electrostatic force.
- the electromechanical signal selection device of the present invention includes a mechanism for applying an external magnetic field to the micro-oscillator, and includes one for exciting the micro-oscillator by Lorentz force.
- the electromechanical signal selection device of the present invention further comprises a mechanism for applying an external magnetic field to a drive electrode or a signal input electrode disposed adjacent to the micro-oscillator, and the micro-vibration in a desired direction. Including those that excite the vibration of the child.
- the micro-vibrator is provided with a drive electrode arranged adjacent to the micro-vibrator or a mechanism for applying an external magnetic field to the micro-vibrator, and the drive electrode or a mechanism for applying an external magnetic field is arranged in a desired direction.
- An external force that excites the vibration of the micro-oscillator can be imprinted.
- the change in the physical property includes that due to a piezoelectric effect.
- the micro-vibrator includes one configured to generate a signal by the piezoelectric effect when excited to cause structural change.
- the micro-oscillator includes one made of a ceramic.
- the micro-oscillator includes one constituted of PZT.
- This configuration can be easily formed by sputtering or the like, and manufacture is easy.
- the change in physical property caused by the structural change of the micro-oscillator which occurs when the micro-oscillator vibrates at the self-resonant frequency, is used for the mechanism of signal selection. By doing this, it is possible to select and output only a signal of a predetermined frequency.
- an electromechanical signal selection device having a high frequency signal selection function which has a simple structure and can be manufactured at low cost is provided.
- a mechanism for applying an external force for exciting the vibration to the micro-oscillator is not necessary, and the structure is further simplified, which enables low-cost manufacturing.
- the electromechanical signal selection device of the present invention is applicable not only to an electric circuit for wireless communication but also to electric circuits for various applications.
- the electromechanical signal selection device of the present invention can be used as a resonator, it can be used for an oscillator, or in a block of an electric circuit such as a mixer or an amplifier.
- FIG. 1 (a) is a perspective view showing a configuration of an electromechanical signal selection device according to Embodiment 1 of the present invention, and (b) is a modification of the electromechanical signal selection device of FIG. 1 (a).
- FIG. 1 (a) is a perspective view showing a configuration of an electromechanical signal selection device according to Embodiment 1 of the present invention, and (b) is a modification of the electromechanical signal selection device of FIG. 1 (a).
- FIG. 2 is a diagram showing a structural modification of the micro-oscillator of the electromechanical signal selection device according to the first embodiment, the second embodiment and the third embodiment of the present invention
- FIG. 8B is a view showing the vibration state of the micro-oscillator.
- FIG. 3 is a view showing an electronic band structure of a micro-oscillator of the electromechanical signal selection device according to the first embodiment of the present invention, where (a) is a diagram showing the stationary state of the micro-oscillator, (b) is a micro Shaking It is a figure which shows the vibration state of a mover.
- FIG. 4 is a diagram showing a signal selection element ring characteristic of the electromechanical signal selection element in the embodiment 1 and the embodiment 2 and the embodiment 3 of the present invention, wherein (a) shows a bandstop signal selection element characteristic
- FIG. 6B is a diagram showing band stop signal selection device characteristics.
- FIG. 5 is a cross-sectional view for stepwise illustrating a manufacturing process of the electromechanical signal selection device in FIG. 1 in the first embodiment of the present invention.
- FIG. 6 (a) is a perspective view showing a modification of the electromechanical signal selection device of FIG. 1 in Embodiment 1 of the present invention
- FIG. 6 (b) is a modification of the electromechanical signal selection device of FIG. FIG.
- FIG. 7 is a cross-sectional view for stepwise illustrating a manufacturing process of the electromechanical signal selection device in FIG. 6 in the first embodiment of the present invention.
- FIG. 8 is a cross-sectional view for stepwise illustrating a manufacturing process of the electromechanical signal selection device in FIG. 6 in the first embodiment of the present invention.
- FIG. 9 (a) is a perspective view showing the configuration of an electromechanical signal selection device according to Embodiment 2 of the present invention, (b) is a modification of the electromechanical signal selection device of FIG. 9 (a).
- FIG. 9 (a) is a perspective view showing the configuration of an electromechanical signal selection device according to Embodiment 2 of the present invention, (b) is a modification of the electromechanical signal selection device of FIG. 9 (a).
- FIG. 10 is a view showing the electronic band structure of the micro-oscillator of the electromechanical signal selection device according to the first embodiment of the present invention, where (a) is a diagram showing the stationary state of the micro-oscillator, (b) is a micro It is a figure which shows the vibration state of a vibrator.
- FIG. 11 (a) is a perspective view showing the configuration of an electromechanical signal selection device according to Embodiment 3 of the present invention
- FIG. 11 (b) is a perspective view showing a modification of the electromechanical signal selection device shown in FIG. It is.
- FIG. 13 is a perspective view showing a configuration of an electromechanical signal selection device in a fifth embodiment of the present invention.
- FIG. 14 (a) is a perspective view showing a structure of a micro-oscillator according to Embodiment 6 of the present invention
- FIG. 14 (b) is a perspective view showing a structure of a micro-resonator according to a modification of Embodiment 6 of the present invention. .
- FIG. 15 A diagram showing the signal selection characteristic in the seventh embodiment of the present invention.
- (A) is a case where the material of the micro oscillator 101 exhibits a change in linear or non-linear electric conduction characteristic with respect to strain.
- FIG. 7B is a view in the case where the material of the micro-oscillator 101 shows a change in the ON / OFF-type electric conduction characteristic with respect to strain.
- Electromechanical signal selection device 100, 200, 300, 400, 500, 600, 700, 800, 2000, 2001, 2002 Electromechanical signal selection device
- FIG. 1 (a) is a perspective view showing the configuration of the electromechanical signal selection device according to the first embodiment of the present invention, and PrNiO is used as the micro-oscillator 101.
- the micro-vibrator 101 stretched between the posts 103 is provided on the surface of the substrate 106 on which the insulating layer 105 is formed and grounded.
- the micro-vibrator 101 is connected to a signal input port IN for inputting a signal and a signal output port OUT for outputting a signal.
- the minute oscillator 10 A potential difference is generated between the substrate 1 and the substrate 106, and an electrostatic force is applied to the micro-vibrator 101 at the same frequency as the high frequency signal.
- the signal input from the signal input port IN is transmitted to the micro-oscillator 101 and excites the micro-oscillator 101 at the frequency of the high frequency signal. Only when a signal corresponding to the self-resonant frequency of the micro-oscillator 101 is input, the micro-oscillator 101 is excited with a large amplitude, and structural deformation of the micro-oscillator 101 occurs.
- the vibration of the micro-oscillator 101 can be used up to the high-order mode of its self-resonant frequency, and the vibration direction of the micro-oscillator 101 changes according to the excited vibration mode.
- the vibration direction of the micro-oscillator 101 is indicated by V. In this structure, as shown in FIG. 1, the vibration direction V is multidirectional.
- the micro-vibrator 101 is extremely fine and its vibration amplitude is smaller, it is more difficult to take out a signal in the conventional vibration detection method of the electromechanical signal selection device which electrically detects the amount of change. Therefore, in the electromechanical signal selection device 100 of the present invention, when the micro-oscillator 101 vibrates at the self-resonant frequency, the physical property changes due to the structural change of the micro-oscillator 101, and a new method of selecting a signal is introduced. Do. In the first embodiment, the change of the physical property is configured to cause the change of the electric conduction characteristic.
- FIG. 2 is a view showing a structural deformation of the micro-oscillator of the electromechanical signal selection device according to the first embodiment of the present invention.
- the structure of the micro-oscillator 101 is in a linear static state, and the crystal structure is also latticed with the lattice constant (a, b). 107 are regularly arranged without distortion.
- the micro-oscillator 101 is excited by the self-resonant frequency, as shown in FIG. 2 (b), the structure of the micro-oscillator 101 is in a curvilinear vibration state, and the crystal structure is also defective. It will be in the state of distortion that is in line with the rules.
- the lattice constants are locally different values (a ', b'), and irregular at some places such as b 'and at some places b ".
- FIG. 3 shows the electronic band structure of the material constituting the micro-oscillator of the electromechanical signal selection device according to the first embodiment of the present invention.
- FIG. 3A shows the electronic band structure of the micro-vibrator 101 in a stationary state in which the micro-vibrator 101 is not vibrating.
- the energy band E has a large open energy band structure between the valence band and the conduction band.
- FIG. 3B shows the electronic band structure of the micro-oscillator 101 in a vibrating state in which the micro-oscillator 101 is excited by the self-resonant frequency.
- the micro-oscillator 101 When a signal that is not the self-resonant frequency of the micro-oscillator 101 is input from the signal input port IN, the micro-oscillator 101 is in a non-vibrating static state and has an electronic band structure as an insulator. And their electrical conductivity is insulating. In this case, the signal can not flow through the micro-oscillator 101 and no signal is output to the signal output port OUT.
- the micro-oscillator 101 when a signal of the self-resonant frequency of the micro-oscillator 101 is input from the signal input port IN, the micro-oscillator 101 is in an excited vibration state, and its electric conduction characteristic is metal.
- the signal can flow through the micro-vibrator 101, and the signal is output to the signal output port OUT. That is, signals of the same frequency can be selectively passed to the signal output port OUT only when the signal of the self-resonant frequency of the micro-oscillator 101 is input from the signal input port IN.
- FIG. 4 (a) is a diagram showing signal selection characteristics of the electromechanical signal selection device in the first embodiment of the present invention.
- Can have band-pass signal selection element characteristics with center frequency f
- the center frequency f and Q value depend on the design of the micro mechanical oscillator 101, and micro mechanical vibration
- PrNi03 is used as a material in which the electronic band structure changes due to the structural change used for the micro-oscillator 101.
- PrNiO is a ceramic and has a crystalline structure
- Perovskite type transition metal oxide PrNiO is an insulator to metal
- the band gap can also be increased by substituting Pr with a smaller ion radius! /, And increasing distortion.
- a change in the electrical conduction characteristic occurs due to a change in the electronic band structure.
- micro-oscillator 101 while a double-supported beam is used as the micro-oscillator 101, as shown in FIG. 1 (b), a micro-oscillator 101 having a disc 101C at the center as shown in a modified example is shown. It may be used.
- FIG. 1 (b) is a perspective view showing a modification of the electromechanical signal selection device of FIG. 1 (a).
- the center of the micro-oscillator is used as the micro-oscillator 101 in this manner.
- the sensitivity can be improved by arranging the disk 101C on the In addition to this, it is possible to change the shape as appropriate, such as a cantilever or a square plate.
- the same components as those of the electromechanical signal selection device 100 shown in FIG. 1 (a) are given the same names and reference numerals and the description thereof is omitted. Do.
- the micro-vibrator 101 is a material in which the relationship between the structural change and the electrical conduction characteristic is reversed, that is, a semiconductor of metal or low resistance in the stationary state.
- a material with high impedance such as insulator or semi-conductor or high-resistance metal in the low impedance state, vibration state, etc., as shown in Fig. 4 (b), Having band stop signal selection element characteristics Is also possible.
- electromechanical signal selection device of the present invention can be configured in a multistage signal selection device connected in parallel or in series.
- FIG. 7 is a cross-sectional view for explaining First, as shown in FIG. 5A, an insulating layer 105 such as SiO or Si N is formed on a substrate 106 which also has Si force by thermal oxidation method or sputtering method. Next,
- Insulating materials such as SiO and Si N, which are
- a material (PrNi03 in this case) to be the micro-vibrator 101 is deposited thereon by a sputtering method, a CVD method, or the like.
- a photoresist 108 is formed on the material to be the micro-oscillator 101, and patterned by electron beam lithography or photolithography to dry the pattern of the micro-oscillator 101. It forms by etching.
- the insulating material below the micro-oscillator 101 which also serves as a sacrificial layer, is removed by selective wet etching with the material to be the micro-oscillator 101, etc.
- the hollow structure of the micro-oscillator 101 as shown in FIG. 5 (c) is manufactured. Use HF etc. as etchant. Also, after selective wet etching, CO is avoided to avoid contact with the hollow substrate.
- PrNiO is used as the micro-oscillator 101 in the above embodiment, it is preferable to use PrNiO.
- semiconductors such as Si (poly Si, single crystal Si, doped Si (P-type, N-type)), Ga, GaAs, GaAsP, InGaAs, GaN, AlGaN, SiC, etc. are also applicable.
- compound semiconductors such as GaAs, GaAsP, InGaAs, GaN and AlGaN, which are not limited to Si, are also applicable.
- the electronic band structure In semiconductors, it is possible to change the electronic band structure and change the electrical conduction characteristics by applying crystal distortion. For example, it is possible to adjust the resistivity and the Young's modulus by doping an impurity such as boron or phosphorus into Si. Furthermore, in the case of a compound semiconductor, it is possible to adjust the desired band gap and the amount of change in electrical conductivity by adjusting the composition ratio and adjusting the dopant. In the case of SiC, by providing crystal strain, the drift speed is increased as compared with the case without strain, and there is a property that the electrical conductivity is improved. In addition, in the case of nanowires in which the electronic band structure is a one-dimensional system in Si, crystal distortion occurs when SiO forms around the material and a huge stress is applied, resulting in an electronic band structure.
- the difference in the structure causes a change in electrical conductivity.
- the electrical conductivity becomes metal or semiconductor depending on the winding method (chirality) of the graph sheet.
- Semiconductor power In one carbon nanotube, an electronic band structure with a very small energy gap (2, 3 meV) and a medium energy gap (0.2 to 0.3 eV) can also be seen.
- peabots in which various substances are injected into carbon nanotubes.
- the substance to be injected is an atom such as cesium (Cs), or a molecule such as fullerene C60, heterohedral fullerene, or an organic substance.
- the band gap force is .42 eV in the portion where Gd @ C 82 is absent, while in the portion where Gd @ C 82 is present, the band gap is It becomes narrow locally at 0.17 eV.
- Carbon-based materials such as carbon nanotubes, are materials whose electronic band structure changes significantly depending on their structure. When crystal strain is mechanically excited in such a material by an external force, electrical conduction is caused by the change in the electronic band structure. Changes in the characteristics occur.
- superconductors such as Al, Pb, La Sr CuO and (BEDTTTF) I are also effective.
- Al, Pb, La Sr CuO and (BEDTTTF) I are also effective.
- a complex phase diagram including a transition from an insulator to a superconductor can be seen, and its electrical conductivity can be controlled by mechanically giving distortion of a crystal structure.
- composite materials in which quantum dots and the like are embedded are also effective.
- the electronic band structure of the quantum dot can be changed to change the electrical conductivity by applying crystal distortion.
- bending of the double-supported beam fabricated by MEMS technology with an external force and excitation of crystal distortion causes a change in the electronic band structure due to the quantum dot distortion.
- materials shown below are also applicable because they exhibit changes in the electrical conductivity due to crystal strain.
- Insulating materials such as Ni, dielectric materials such as PZT, etc. are also applicable.
- FIG. 6 is a perspective view showing a modification of the electromechanical signal selection device of FIG. 1 in the first embodiment of the present invention.
- the micro-vibrator 101 stretched between the posts 103 and the spacer 104 is stretched on the substrate 106 on the surface of which the insulating layer 105 is formed.
- a drive electrode 102 is provided on the The micro-oscillator 101 is connected to a signal input port IN for inputting a signal and a signal output port OUT for outputting a signal, and when a high frequency signal is input, the micro-oscillator 101 and the drive electrode 102 are connected. A potential difference is generated between them, and electrostatic force is applied to the micro-oscillator 101 at the same frequency as the high frequency signal.
- the vibration direction of the micro-oscillator 101 is indicated by V.
- FIG. 6A shows the case where the vibration direction V of the micro mechanical oscillator 101 is in the horizontal direction with respect to the substrate, the vibration direction can be various directions including the vertical direction, and is desired It is possible to arrange the drive electrode 102 so that the excitation force is applied to the micro-oscillator in the direction shown in FIG.
- FIG. 6 (b) is a perspective view showing a modification of the electromechanical signal selection device of FIG. 6 (a).
- the electromechanical signal selection device 400 shown in FIG. 6 (b) while a double-supported beam is used as the micro-oscillator 101 in the electromechanical signal selection device 300, this is an example using a disk. As described above, it is possible to use various shapes such as a cantilever, a square plate, etc. as the micro-oscillator 101.
- the same components as those of the electromechanical signal selection device 300 shown in FIG. 6 (a) are given the same names and reference numerals and the description thereof is omitted.
- FIGS. 7 (a) to (c) and FIGS. 8 (a) to (b) show the electrical cross section of the electromechanical signal selection device of FIG. 6 (a), which is a modification of the embodiment 1 of the present invention.
- FIG. 7 is a cross-sectional view for explaining the manufacturing process of the mechanical signal selection element in a stepwise manner.
- an insulating layer 105 such as SiO or Si N is thermally oxidized or sputtered on a substrate 106 such as Si.
- a compound semiconductor such as GaAs can be applied as the substrate 1.
- the insulating material such as SiO, Si N, etc., will be used as post 103 and spacer 104.
- Si to be the drive electrode 102 is deposited thereon by the CVD method or the like.
- Semiconductor materials such as Si and GaAs can be doped and used for low resistance by P-type or N-type conversion. In the case of Si, it is possible to dope boron if it is P-type, or phosphorus if it is N-type. Doping has the effect of lowering the resistance of the oscillator, ie, the impedance, and controlling the Young's modulus.
- a photoresist 108 patterned by electron beam lithography, photolithography or the like is formed on the doped silicon to be the drive electrode 102, and this photoresist 108 is formed. It shape
- the micro-oscillator 101 is formed. As shown in FIG. 7C, after the photoresist 108 is removed by ashing, a material to be the micro-vibrator 101 is deposited by a sputtering method, a CVD method, or the like. Next, a photoresist 108 patterned by electron beam lithography or photolithography is formed on the material to be the micro-vibrator 101, and is formed by dry etching as shown in FIG. 8A.
- the insulating material under the micro-vibrator 101 which also serves as a sacrificial layer, is removed by selective wet etching with the material to be the micro-vibrator 101, etc. 8
- the hollow structure of the micro-oscillator 101 as shown in 8 (b) is manufactured. Use HF etc. as etchant.
- C02 supercritical drying is performed after selective wet etching to avoid contact with the hollow structure substrate.
- the material of the micro-oscillator 101 is the same as that of the first embodiment.
- the drive electrode 102 is made of a semiconductor material, it is formed in the same process as the micro-vibrator 101, and after forming the pattern or before forming the pattern, the drive electrode 102 is formed by doping. Alternatively, the resistance may be selectively reduced. This reduces the number of masks and makes it possible to simplify the process.
- modification process there is, for example, a process of forming a crystal strain by ion implantation of a material having a large ion radius.
- a metal material such as aluminum, gold, copper or the like can be deposited and formed by sputtering or vapor deposition.
- the insulating layer 105 may not be formed if it is ensured that the influence of the loss of the high frequency signal by the substrate 106 is not required.
- the electromechanical signal selection device 100, 200, 300, 400 only the signal of a predetermined frequency is selected and output without providing the high sensitivity vibration detection mechanism which has been difficult to realize in the past. make it possible to In addition, since it is not necessary to provide a high sensitivity vibration detection mechanism, an electromechanical signal selection device having a high frequency signal selection function which has a simple structure and can be manufactured at low cost is provided. Furthermore, according to the electromechanical signal selection device 100, 200, there is no need to provide a mechanism for applying an external force to excite the micro-oscillator according to the electromechanical signal selection device 100, and furthermore, the structure can be simplified and manufacturing can be performed at low cost. Do.
- the electromechanical signal selection device can be applied as a filter device, sampling device, or switch device.
- the size of the micro-oscillator through which the high-frequency signal propagates may be on the order of micrometers in order to reduce the insertion loss.
- the high-order mode resonance of the micro-oscillator is used.
- a plurality of electromechanical signal selection elements of the present invention may be connected in parallel.
- electromechanical signal selection device of the present invention is applicable not only to wireless communication terminals, but also to electrical devices for various applications.
- the electromechanical signal selection device of the present invention is applicable not only to an electric circuit for wireless communication, but also to electric circuits for various applications.
- the electromechanical signal selection device of the present invention can be used in other applications such as a resonator, and can be used in a block of an electrical circuit such as an oscillator, a mixer, or an amplifier.
- FIG. 9 (a) is a perspective view showing the configuration of the electromechanical signal selection device in the second embodiment of the present invention.
- the micro-oscillator 101 stretched between the posts 103 is provided on the substrate 106 on the surface of which the insulating layer 105 is formed.
- a mechanism for applying an external magnetic field H to 101 is provided.
- the micro-vibrator 101 is connected to a signal input port IN for inputting a signal and a signal output port OUT for outputting a signal.
- the mechanism for applying the external magnetic field H can be a mechanism for generating a magnetic field such as a magnetic substance or a coil.
- the micro-vibrator 101 is excited by electrostatic force, while in the electromechanical signal selection device 500 according to the second embodiment, the excitation method is different.
- the micro-oscillator 101 is excited by the force.
- a method of exciting the micro-oscillator in the electromechanical signal selection device 500 will be described.
- An external magnetic field H is applied to the micro-oscillator 101 so that the Lorentz force is applied in a direction in which the micro-oscillator 101 is vibrated.
- Force showing the vibration direction of the micro-oscillator 101 by V In this case, the vector direction of the external magnetic field H is perpendicular to the substrate.
- Lorentz force is applied to the micro-oscillator 101 by the alternating current and the external magnetic field H.
- the direction of the Lorentz force alternates with the direction of the alternating current and its frequency is the frequency of the high frequency signal.
- the Lorentz force is applied to the micro-oscillator 101 by the high frequency signal to excite the micro-oscillator 101.
- the signal input from the signal input port IN is transmitted to the micro-oscillator 101 and excites the micro-oscillator 101 at the frequency of the high frequency signal. Only when a signal of the self-resonant frequency of the micro-oscillator 101 is input, the micro-oscillator 101 is excited with a large amplitude, and structural deformation of the micro-oscillator 101 occurs.
- the vibration of the micro-oscillator 101 is It is possible to use up to higher order modes of vibration frequency, and the vibration direction of the micro-oscillator 101 changes depending on the excited vibration mode.
- the micro-vibrator 101 is extremely fine and its vibration amplitude is smaller, it is more difficult to take out a signal by the conventional vibration detection method of the electromechanical signal selection device which electrically detects the amount of change. Therefore, in the electromechanical signal selection device 300 of the present invention, when the micro-oscillator 101 vibrates at a self-resonant frequency, the physical property is changed due to the structural change of the micro-oscillator 101, and a new method of selecting a signal is introduced. Do. In the second embodiment, a case where a change in electrical conductivity is applied as a change in physical property is shown.
- FIG. 2 is a diagram showing a structural deformation of the micro-oscillator of the electromechanical signal selection device according to the second embodiment of the present invention.
- the structure of the micro-oscillator 101 is in a linear stationary state, and the crystal structure is also a lattice constant (a, b). 107 are regularly arranged without distortion.
- the structure of the micro-oscillator 101 becomes a curvilinear vibration state as shown in FIG. It is in a distorted state.
- the lattice constants have locally different values (a ', b') and become irregular such as b 'in some places and b "in some places.
- the electronic band structure is changed due to the structural change in the micro-oscillator 101, because the change in the electrical conduction characteristic due to the structural change in the micro-oscillator 101 is used for the mechanism of signal selection. Use the material.
- the micro-vibrator 101 vibrates in a static state, to a certain extent. You need to have sex.
- FIG. 10 is a diagram showing an electronic band structure of the micro-oscillator of the electromechanical signal selection device in the second embodiment of the present invention.
- the electric conduction characteristic of the micro-oscillator 101 is a semiconductor or a metal with high resistance.
- the energy gap EG is opened between the valence band and the conduction band to form an electronic band structure, and the Fermi energy EF contributing to electrical conduction is located in the energy gap EG. .
- the energy gap EG is small, it becomes a semiconductor-like electronic band structure in which carriers (electrons or holes) can move.
- FIG. 10 (b) shows the electronic band structure of the micro-oscillator 101 in a vibrating state in which the micro-oscillator 101 is excited by the self-resonant frequency.
- the distortion changes the electronic band structure of the micro-oscillator 101, causing electric conduction.
- the characteristics are metal. There is no energy gap EG between the valence band and the conduction band, and the electron band of the conduction band is converted to a metallic electronic band structure by having many electron bands in the conduction band on the Fermi energy EF contributing to the electric conduction.
- the micro-oscillator 101 When a signal that is not the self-resonant frequency of the micro-oscillator 101 is input from the signal input port IN, the micro-oscillator 101 is in a stationary state where it is not vibrating, and its electrical conductivity is semiconductor or It is a metal of high resistance. In this case, a sufficient signal can not flow through the high-impedance micro-oscillator 101, and no signal is output to the signal output port OUT.
- the vibration of the self-resonant frequency of the micro-oscillator 101 is input from the signal input port IN, the micro-oscillator 101 is in an excited vibration state, and its electric conduction characteristic is metal.
- the signal can flow through the micro-vibrator 101, and the signal output port OUT outputs a signal. That is, only when the signal of the self-resonant frequency of the micro-oscillator 101 is input from the signal input port IN, a signal of the same frequency can be selectively passed to the signal output port OUT.
- FIG. 4 (a) is a diagram showing signal selection characteristics of the electromechanical signal selection device in the second embodiment of the present invention.
- Can have band-pass signal selection element characteristics with center frequency f
- the center frequency f and Q value depend on the design of the micro mechanical oscillator 101, and micro mechanical vibration
- the material whose electronic band structure changes due to the structural change used for the micro-oscillator 101 is the same as that of the first embodiment.
- FIG. 9 (b) is a perspective view showing a modification of the electromechanical signal selection device of FIG. 9 (a).
- a disk is used in the electromechanical signal selection device 600 shown in FIG. 9 (b).
- various shapes such as a cantilever, a square plate, etc. as the micro-oscillator 101.
- the electromechanical signal selection device 600 of FIG. 9B the same components as those of the electromechanical signal selection device 500 shown in FIG.
- the micro-vibrator 101 is a material in which the relation between the structural change and the electrical conductivity is reversed, that is, a semiconductor of metal or low resistance in the stationary state.
- a material with high impedance such as semiconductor or high resistance metal in low impedance state, vibration state, etc.
- band stop signal selection of center frequency fC as shown in Fig. 4 (b) It is also possible to have element characteristics
- the electromechanical signal selection device of the present invention can be configured in a multistage signal selection device configuration in which the electromechanical signal selection devices are connected in parallel or in series.
- the vibration direction of the micro mechanical vibrator is horizontal to the substrate
- the vibration direction can be various directions including the vertical direction
- the electromechanical signal selection device 500, 600 can be manufactured by the same manufacturing method as the method of manufacturing the electromechanical signal selection device 100, 200 according to the first embodiment of the present invention.
- the electromechanical signal selection elements 500 and 600 it is possible to select and output only a signal of a predetermined frequency which can not be provided with the high sensitivity vibration detection mechanism which has been difficult to realize conventionally.
- an electromechanical signal selection device having a high frequency signal selection function which has a simple structure and can be manufactured at low cost is provided.
- FIG. 11 (a) is a perspective view showing the configuration of the electromechanical signal selection device in the third embodiment of the present invention.
- a PZT micro-resonator 10 and a micro-vibrator 10 stretched between posts 103 on a substrate 106 on the surface of which an insulating layer 105 is formed;
- a signal input electrode 109 provided on the server 104 is provided.
- a signal input port IN for inputting a signal is connected to the signal input electrode 109, and a signal output port OUT for outputting a signal is connected to the micro vibrator 101.
- the vibration direction of the micro-oscillator 101 is indicated by V.
- the vibration direction V of the micro mechanical oscillator 101 is shown in the case of a horizontal direction with respect to the substrate.
- the force vibration direction can be various directions including the vertical direction, It is possible to arrange the signal input electrode 109 so that the excitation force is generated on the micro-oscillator in a desired direction.
- FIG. 7 is a longitudinal sectional view showing the configuration of an electromechanical signal selection device using PZT as a micro-oscillator.
- the signal input from the signal input port IN propagates to the signal input electrode 109 and excites the micro-oscillator 101 at the frequency of the high frequency signal. Only when a signal of the self-resonant frequency of the micro-oscillator 101 is input, the micro-oscillator 101 is excited with a large amplitude, and structural deformation of the micro-oscillator 101 occurs.
- the vibration of the micro-oscillator 101 can be used up to a higher mode of its self-resonant frequency. The direction changes according to the excited vibration mode.
- the micro-vibrator 101 is extremely fine and its vibration amplitude is smaller, it is more difficult to take out a signal in the conventional vibration detection method of the electromechanical signal selection device which electrically detects the amount of change. Therefore, in the electromechanical signal selection device 700 of the present invention, when the micro-oscillator 101 vibrates at the self-resonant frequency, the physical property changes due to the structural change of the micro-oscillator 101, and a new method for selecting a signal is introduced. Do.
- the third embodiment shows the case where the piezoelectric effect is applied as a change in physical property.
- the phenomenon shown in FIG. 2 also occurs in the structural deformation of the micro-oscillator of the electromechanical signal selection device according to the third embodiment of the present invention.
- the structure of the micro-oscillator 101 is in a linear static state, and the crystal structure is also determined by the lattice constants (a, b).
- the grid 107 is regularly arranged in an undistorted state.
- the micro-oscillator 101 is excited by the self-resonant frequency, as shown in FIG.
- the structure of the micro-oscillator 101 becomes a curvilinear vibration state, and the crystal structure is also It will be in the state of distortion that is lined up irregularly.
- the lattice constant is locally different values (a ', b'), and irregular in some places such as b 'and not in some places.
- a piezoelectric material is used for the micro-oscillator 101 in order to use the piezoelectric effect due to the structural change of the micro-oscillator 101 in the mechanism of signal selection.
- the micro-oscillator 101 When a signal that is not the self-resonant frequency of the micro-oscillator 101 is input from the signal input port IN, the micro-oscillator 101 is not vibrating and is in a stationary state.
- the vibration of the self-resonant frequency of the micro-oscillator 101 is input from the signal input port IN, the micro-oscillator 101 is in an excited vibration state, and the piezoelectric effect due to the distortion of the micro-oscillator 101 occurs.
- an alternating voltage of the self-resonant frequency of the micro-vibrator 101 is generated by the piezoelectric effect, and a signal is output to the signal output port OUT. That is, only when the signal of the self-resonant frequency of the micro-oscillator 101 is input from the signal input port IN, the signal of the same frequency is selectively output to the signal output port OUT.
- the electromechanical signal selection device also has a bandpass signal selection device characteristic with a center frequency f, as shown by the signal selection characteristic in FIG. 4 (a). Is possible. Again, the center frequency f and Q values are used to design the micromechanical oscillator 101
- piezoelectric material used for the micro-oscillator 101 in addition to piezoelectric materials such as PZT, dielectric materials, carbon materials such as carbon nanotubes, insulating materials such as SiO and Si N, La
- Ceramics such as Sr MnO, PrNiO, organic substances such as (DMe- DCNQI) Cu, quantum dots
- a material that exhibits a piezoelectric effect due to crystal distortion such as a composite material embedded with a material, a superlattice material in which a plurality of materials are laminated, or the like.
- FIG. 11 (b) is a perspective view showing a modification of the electromechanical signal selection device of FIG. 11 (a).
- a double-supported beam is used as the micro-oscillator 101 in the electromechanical signal selection device 700, while a disk is used.
- various shapes such as a cantilever, a square plate, etc. as the micro-oscillator 101.
- the same components as those of the electromechanical signal selection device 700 shown in FIG. 11 (a) are given the same names and reference numerals and the description thereof is omitted. .
- electromechanical signal selection device of the present invention can be configured in a multistage signal selection device connected in parallel or in series.
- the electromechanical signal selection devices 700 and 800 can be manufactured by the same manufacturing method as the method for manufacturing the electromechanical signal selection devices 100 and 200 in the first embodiment of the present invention.
- the electromechanical signal selection device 700, 800 it is possible to select and output only a signal of a predetermined frequency which can not be provided with the high sensitivity vibration detection mechanism which has been difficult to realize conventionally. Do.
- an electromechanical signal selection device having a high frequency signal selection function which has a simple structure and can be manufactured at low cost is provided.
- FIG. 12 (a) is a perspective view showing the configuration of the electromechanical signal selection device in the fourth embodiment of the present invention.
- a micro-vibrator 101 stretched between electrodes 201 formed on the post 103 is provided in the electromechanical signal selection device 2000 shown in FIG. 12 (a).
- a minute oscillator 101 is connected to a signal input port IN for inputting a signal and a signal output port OUT for outputting a signal.
- the minute oscillator 101 is connected.
- a potential difference is generated between the substrate 106 and the grounded substrate 106, and electrostatic force is applied to the micro-oscillator 101 at the same frequency as the high frequency signal.
- the micro-oscillator 101 is hollow and entirely movable since it has no fixed portion on the post 103, and changes in physical properties including structural deformation and electrical conduction characteristics due to vibration can be It becomes possible to give over the whole child 101.
- This structure can be manufactured only by adding the material deposition and patterning steps of the electrode 201 to the manufacturing process shown in the first embodiment, and the material of the electrode 201 is a metal material containing Al and Au. And conductive material containing doped silicon.
- FIG. 12 (b) is a perspective view showing the configuration of a modification of the electromechanical signal selection device according to the fourth embodiment of the present invention.
- a micro-oscillator 101 stretched between the bosses 103 is provided in the electromechanical signal selection device 2001 shown in FIG. 12 (b).
- the structure of the post 103 has a thin columnar shape, and the area of the fixed portion in contact with the micro-oscillator 101 is reduced.
- micro-oscillator 101 Since the micro-oscillator 101 is flexibly fixed on the post 103, the micro-oscillator 101 is movable throughout, and changes in physical properties including structural deformation and electrical conduction characteristics due to vibration can be made throughout the micro-oscillator 101. It becomes possible to give.
- This structure is formed of an insulating material such as SiO or Si N, and the post 103 is
- It can be formed by performing etching by dry etching or dry etching and optimizing the etching time.
- FIG. 13 is a perspective view showing a configuration of an electromechanical signal selection device in the fifth embodiment of the present invention.
- the vibrating portion stretched between the posts 103 is composed of an electrode 201 and a micro-oscillator 101. Displacement possible floating in the hollow A portion of the active portion is a micro-oscillator 101 formed of a material that causes a change in electrical conductivity due to vibration.
- This structure is manufactured by changing the mask notions of the electrode 201 and the micro-oscillator 101 in the manufacturing process of FIG. 12 (a).
- FIG. 14 (a) is an enlarged perspective view of an essential part showing a configuration of a micro-oscillator according to a sixth embodiment of the present invention.
- the micro-oscillator 1011 shown in FIG. 14 (a) has a layered structure in which a phase change material layer 202 showing change in physical property due to structural change is formed on the surface of a linear conductor layer 203.
- the high frequency signal flowing through the conductor 203 is mainly responsible for the excitation of the micro-oscillator 1011.
- the high frequency signal flowing through the phase change material layer 202 is responsible for signal selection due to changes in physical properties including electrical conductivity. .
- the high frequency signal input to the micro-oscillator 1011 has a property called skin effect which flows near the surface as the frequency becomes higher.
- the minute oscillator 1011 vibrates so that the half of the diameter of the conductor layer 203 has a large signal power attenuation rate which is at least the skin depth of the high frequency signal or less, and includes the phase change material layer 202.
- the whole of the micro-oscillator 1011 may be configured to pass a signal when the resistance is low. In this case, at least the size of the radius of the micro-oscillator 1011 may be a shape having a small signal power attenuation rate greater than the skin depth of the high frequency signal.
- FIG. 14 (b) is a perspective view showing a configuration of a modification of the micro-oscillator according to Embodiment 6 of the present invention.
- the micro-oscillator 1012 shown in FIG. 14 (b) it has a layered structure in which a phase change material layer 202 showing change in physical property due to structural change is formed on the lower substrate side of the conductor layer 203.
- the high frequency signal flowing through the conductor layer 203 mainly serves to excite the micro-oscillator 1011, and the high frequency signal flowing through the phase change material layer 202 is caused by changes in physical properties including electrical conduction characteristics. Responsible for signal selection.
- phase change material layer 202 By forming the phase change material layer 202 on the substrate ground side where the electric field E of the high frequency signal is concentrated, it is possible to increase the signal selection effect due to the change in the electrical conductivity of the phase change material layer 202. Saru.
- the phase change material layer 202 can be formed arbitrarily on the side of the conductor layer 203 where the electric field of the high frequency signal is concentrated.
- the high frequency signal input to the micro-oscillator 1012 has a property called skin effect which flows near the surface as the frequency becomes higher.
- the micro-oscillator 1012 vibrates so that the half size of the diameter of the conductor 203 is at least a shape having a large signal power attenuation rate less than the skin depth of the high-frequency signal, and the micro-oscillator 1012 including the phase change material 202 The whole may be configured to pass the signal when the resistance is low.
- at least the size of the radius of the micro-oscillator 1012 may be a shape having a small signal power attenuation rate greater than the skin depth of the high frequency signal.
- the layered structure of the micro-oscillator 1011 can be a plurality of layered structures including two or more layers.
- the structures of the electromechanical signal selection device and the micro-oscillator in the sixth embodiment are the same as the electromechanical signal selection devices 100, 200, 300, 400, 500, 600 in the first, second and third embodiments. 700, 800 [Kooh! It is applicable even if it is.
- FIG. 15 is a diagram showing signal selection characteristics in the seventh embodiment of the present invention.
- the material of the micro-oscillator 101 exhibits a change in the linear or non-linear electric conduction characteristic with respect to strain. Insertion loss-O.ldB or less is achieved when the micro oscillator 101 is in a high-resistance state when not vibrating, and when the resistance of the micro oscillator is 1 ⁇ or less when isolation is 30 dB or more at mechanical resonance. It is possible. Such characteristics are exhibited when a piezoresistive material or the like is used as the material of the micro-oscillator 101.
- FIG. 15 (b) shows the case where the material of the micro-oscillator 101 exhibits a change in ON / OFF-type electric conduction characteristics with respect to strain. If the micro-oscillator 101 is an insulator when not vibrating, the isolation is large, and the micro-oscillator has a low metal at mechanical resonance. In the resistance state, an insertion loss of about OdB can be realized. Such characteristics are exhibited when a metal-insulator transition material containing Beguchi-Bussite transition metal oxide or the like is used as the material of the micro-oscillator 101.
- the electromechanical signal selection device enables signal selection by a change in physical property caused by a change in the structure of the micro-oscillator, which occurs when the micro-oscillator vibrates at a self-resonant frequency.
- the present invention is useful as an electromechanical signal selection device having a high frequency signal selection function and an electric device using the same, which has a simple structure and can be manufactured at low cost.
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Micromachines (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
Claims
Priority Applications (1)
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US10/598,844 US7551044B2 (en) | 2004-06-14 | 2005-06-13 | Electric machine signal selecting element |
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JP2004175123 | 2004-06-14 | ||
JP2004-175123 | 2004-06-14 | ||
JP2005-170756 | 2005-06-10 | ||
JP2005170756A JP4611127B2 (ja) | 2004-06-14 | 2005-06-10 | 電気機械信号選択素子 |
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PCT/JP2005/010790 WO2005122395A1 (ja) | 2004-06-14 | 2005-06-13 | 電気機械信号選択素子 |
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US (1) | US7551044B2 (ja) |
JP (1) | JP4611127B2 (ja) |
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JP4611127B2 (ja) | 2011-01-12 |
US20070164839A1 (en) | 2007-07-19 |
JP2006033813A (ja) | 2006-02-02 |
US7551044B2 (en) | 2009-06-23 |
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