WO2005062382A2 - Light emitting diode based illumination assembly - Google Patents

Light emitting diode based illumination assembly Download PDF

Info

Publication number
WO2005062382A2
WO2005062382A2 PCT/US2004/037522 US2004037522W WO2005062382A2 WO 2005062382 A2 WO2005062382 A2 WO 2005062382A2 US 2004037522 W US2004037522 W US 2004037522W WO 2005062382 A2 WO2005062382 A2 WO 2005062382A2
Authority
WO
WIPO (PCT)
Prior art keywords
electrically
layer
illumination
light emitting
heat spreading
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2004/037522
Other languages
English (en)
French (fr)
Other versions
WO2005062382A3 (en
Inventor
John C. Schultz
Donald K. Larson
Michael N. Miller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Innovative Properties Co
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Priority to EP04800966A priority Critical patent/EP1692722A2/en
Priority to JP2006542591A priority patent/JP2007513520A/ja
Publication of WO2005062382A2 publication Critical patent/WO2005062382A2/en
Publication of WO2005062382A3 publication Critical patent/WO2005062382A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20—Light sources comprising attachment means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H01L2224/48228—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item the bond pad being disposed in a recess of the surface of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48471—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H01L2924/07811—Extrinsic, i.e. with electrical conductive fillers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
    • H05K1/056—Insulated conductive substrates, e.g. insulated metal substrate the metal substrate being covered by an organic insulating layer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
    • H05K1/183—Components mounted in and supported by recessed areas of the printed circuit board

Definitions

  • the present invention generally relates to a lighting or illumination assembly. More particularly, the present invention relates to a package for light emitting elements. Illumination systems are used in a variety of diverse applications. Traditional illumination systems have used lighting sources such as incandescent or fluorescent lights, for example. More recently, other types of light emitting elements, and LEDs in particular, have been used in illumination systems. LEDs have the advantages of small size, long life and low power consumption. These advantages of LEDs make them useful in many diverse applications. As the light intensity of LEDs increases, LEDs are more frequently replacing other lighting sources. For many lighting applications, it is generally necessary to have a plurality of LEDs to supply the required light intensity.
  • a plurality of LEDs can be assembled in arrays having small dimensions and a high illuminance or irradiance. It is possible to achieve an increase in the light intensity of an array of LEDs by increasing the packing density of the individual diodes within the array. An increase in packing density can be achieved by increasing the number of diodes within the array without increasing the space occupied by the array, or by maintaining the number of diodes within the array and decreasing the array dimensions.
  • An increase in packing density can be achieved by increasing the number of diodes within the array without increasing the space occupied by the array, or by maintaining the number of diodes within the array and decreasing the array dimensions.
  • tightly packing large numbers of LEDs in an array is a long-term reliability concern since local heating, even with a globally efficient thermal conduction mechanism, can reduce the lifespan of the LEDs. Therefore, dissipating the heat generated by the array of LEDs becomes more important as the packing density of the LEDs increases.
  • Conventional LED mounting techniques use packages like that illustrated in United
  • the substrates whether they are inorganic material such as ceramic or organic material such as F 4 epoxy, have limited thermal conductivity and the thermal resistance from the heat generating LED to the heat dissipating part of the assembly limits the maximum power dissipation in the LED, and thus the density of the LEDs within the array.
  • thermal vias in organic materials to transfer heat from the LED to the opposite side of the substrate and then to a heat dissipation assembly.
  • thermal vias cannot be plated shut due to the potential for trapping plating chemicals in the thermal vias. Therefore, relatively large diameter vias are needed to achieve a low thermal resistance from the LED to the back of the substrate.
  • thermal vias thus limits the minimum pitch of the LEDs, and the thermal via diameter limits the amount of heat that can be transported by a single via.
  • both organic and inorganic substrates have a coefficient of thermal expansion (CTE) associated with the material.
  • CTE coefficient of thermal expansion
  • the choice of other component materials is limited, particularly in the case of a low CTE material such a ceramic that is difficult to match with polymeric materials. Accordingly, there is a need for a LED package with improved thermal properties.
  • the present invention provides an illumination assembly having improved thermal properties.
  • the assembly includes a substrate having an electrically insulative layer on a first side of the substrate and an electrically conductive layer on a second side of the substrate.
  • a plurality of LEDs are disposed on the substrate. Each LED is disposed in a via extending through the electrically insulative layer on the first side of the substrate to the electrically conductive layer on the second side of the substrate. Each LED is operatively connected through the via to the electrically conductive layer.
  • the substrate is flexible, and the electrically conductive layer on the second side of the substrate is thermally conductive.
  • the electrically conductive layer is patterned to define a plurality of electrically isolated heat spreading elements, where each LED is electrically and thermally coupled to an associated heat spreading element.
  • a heat dissipation assembly is disposed adjacent the heat spreading elements, and separated therefrom by a layer of material that is thermally conductive and electrically insulative.
  • Figure 1 schematically illustrates a perspective view of an embodiment of an illumination assembly according to the invention.
  • Figure 2 schematically illustrates a top plan view of the substrate used in the assembly of FIG. 1.
  • Figure 3 A schematically illustrates a cross-sectional view taken along line 3-3 of FIG. 2.
  • Figure 3B schematically illustrates a cross-sectional view of another embodiment of an illumination assembly according to the invention.
  • Figure 3C schematically illustrates a cross-sectional view of another embodiment on an illumination assembly according to the invention.
  • Figure 4 schematically illustrates a top plan view of a substrate for use with flip-chiplike LEDs.
  • Figure 5 schematically illustrates a cross-sectional view taken along line 5-5 of FIG. 4.
  • Figure 6 schematically illustrates a top plan view of another substrate embodiment for use with wirebonded LEDs.
  • Figure 7 schematically illustrates a cross-sectional view taken along line 7-7 of FIG. 6.
  • Figure 8 schematically illustrates a top plan view of another embodiment of a substrate for use with an illumination assembly according to the invention.
  • Figure 9 schematically illustrates a cross-sectional view taken along line 9-9 of Fig 8.
  • Figures 10A-C schematically illustrate an embodiment of an illumination assembly using multilayer optical film.
  • Figures 11 A-C schematically illustrate an embodiment of a shaped illuinination assembly according to the invention.
  • LED dies include, but are not limited to, light emitting elements such as light emitting diodes (LEDs), laser diodes, and super-radiators, to name a few.
  • FIG. 1 shows a perspective view of one embodiment of a portion of an illumination assembly 20 according to the invention.
  • the illumination assembly 20 includes a two- dimensional configuration of LED dies 22 disposed in an array.
  • the LED dies 22 can be selected to emit a preferred wavelength, such as in the red, green, blue, ultraviolet, or infrared spectral regions.
  • the LED dies 22 can each emit in the same spectral region, or alternately can emit in different spectral regions.
  • the LED dies 22 are disposed within vias 30 on a substrate 32.
  • Substrate 32 is comprised of an electrically insulative dielectric layer 34 having a patterned layer 36 of electrically and thermally conductive material disposed on a surface thereof.
  • the vias 30 extend through the dielectric layer 34 to the patterned conductive layer 36, where the LED dies 22 are operatively connected to bond pads (not shown) of the conductive layer 36.
  • the conductive layer 36 of substrate 32 is disposed adjacent a heat sink or heat dissipation assembly 40, and is separated from heat dissipation assembly 40 by a layer 42 of thermally conductive material.
  • the material of layer 42 is also electrically insulative if the heat dissipation assembly 40 is electrically conductive.
  • Electrically insulative dielectric layer 34 may be comprised of a variety of suitable materials, including polyi ide, polyester, polyethyleneterephthalate (PET), multilayer optical film (as disclosed in United States Patent Nos. 5,882,774 and 5,808,794), polycarbonate, polysulfone, or FR4 epoxy composite, for example.
  • Electrically and thermally conductive layer 36 may be comprised of a variety of suitable materials, including copper, nickel, gold, aluminum, tin, lead, and combinations thereof, for example.
  • substrate 32 is flexible and deformable.
  • a suitable flexible substrate 32 having a polyimide insulative layer and copper conductive layer is 3MTM Flexible Circuitry, available from 3M Company of Saint Paul,
  • the heat dissipation assembly 40 can be, for example, a heat dissipation device, commonly called a heat sink, made of a thermally conductive metal such as aluminum or copper, or a thermally conductive polymer such as a carbon-filled polymer.
  • the material of layer 42 may be, for example a thermally conductive adhesive material such as a boron nitride loaded polymer, like that available as 3M 2810 from 3M Company, or a thermally conductive non-adhesive material such as a silver filled compound, like that available as Arctic Silver 5 from Arctic Silver Incorporated of Visalia, California, U.S.A.
  • heat dissipation assembly 40 has a thermal resistivity as small as possible, and preferably less than 1.0 C/W. h another embodiment, heat dissipation assembly 40 has a thermal resistivity in the range of 0.5 to 4.0 C/W.
  • the material of layer 42 has a thermal conductivity in the range of 0.2 W/m-K to 10 W/m-K, and preferably at least 1 W/m-K.
  • the LED dies 22 illustrated are of the type having one electrical contact on the base of the LED die and another electrical contact on the opposite (top) surface of the LED die.
  • each LED die 22 is electrically and thermally connected to a bond pad 46a at the bottom of via 30, while the contact on the top of each LED die 22 is electrically connected to the conductive layer 36 by a wirebond 38 extending from LED die 22 to a bond pad 46b at the bottom of via 44.
  • the vias 44 extend through insulative layer 32 to conductive layer 36.
  • vias 30, 44 can be chemically etched, plasma etched, or laser milled tlirough insulative layer 32.
  • vias 30 provide the advantage of a convenient alignment point for placing the LED dies 22.
  • the pattern of conductive layer 36 of FIG. 1 is best seen in FIG. 2.
  • Conductive layer 36 is patterned to define a plurality of electrically isolated heat spreading elements 50. Each heat spreading element 50 is positioned for electrical and thermal coupling to an associated LED die 22 through associated vias 30, 44. For example, for the LED dies illustrated in FIG. 1 having one electrical contact on the diode base and another electrical contact on the top of the diode, the positions of vias 30 and 44 are indicated by dashed lines in FIG. 2. Bonding pads 46a, 46b can be positioned within patterned conductive layer 36 such that LED dies 22 are electrically connected in series between power leads 48a, 48b, based on requirements of the particular application. As best seen in FIG.
  • conductive layer 36 is patterned to remove only as much conductive material as is necessary to electrically isolate heat spreading elements 50, leaving as much of conductive layer 36 as possible to act as a heat spreader for the heat generated by LED dies 22.
  • additional portions of layer 36 can be removed when forniing heat spreading elements 50, with a corresponding reduction in the ability of heat spreading elements 50 to conduct heat from the LED dies.
  • Each LED die 22 is therefore in direct contact with a relatively large area of thermally conductive material in layer 36.
  • Each heat spreading element 50 of layer 36 can then efficiently transfer heat from the LED die 22 because of the size of the heat spreading element 50 for each LED die 22.
  • thermally conductive, electrically insulating material in layer 42 between the conductive layer 36 and the heat dissipating assembly 40 allows an arbitrarily low thermal resistance of the assembly by simply adjusting the pitch of LED dies 22 (and consequently the size of heat spreading elements 50 per LED die 22).
  • the pitch of heat spreading elements 50 is at least the LED die size (typically on the order of 0.3 mm), but there is no practical upper limit to the pitch, depending upon the requirements of the specific application. In one embodiment, the pitch of heat spreading elements is 2.5 mm.
  • heat spreading elements 50 are illustrated in FIG. 2 as being generally square in shape, heat spreading elements 50 may be rectangular, triangular, or any other shape. Preferably heat spreading elements 50 are shaped to efficiently tile the surface of substrate 32.
  • 3 A is an enlarged sectional view taken along line 3-3 of Figure 2.
  • the LED die 22 is positioned within via 30 and electrically and thermally connected to the bond pad 46a of conductive layer 36 with a layer 60 of either isotropically conductive adhesive (for example, Metech 6144S, available from Metech Incorporated of Elverson, Pennsylvania, U.S.A.,), or an anisotropically conductive adhesive, or solder.
  • Solder typically has a lower thermal resistance than an adhesive, but not all LED dies have solderable base metallization.
  • Solder attachment also has the advantage of LED die 22 self-alignment, due to the surface tension of the molten solder during processing. However, some LED dies 22 may be sensitive to solder reflow temperatures, making an adhesive preferable.
  • the LED die 22 is nominally 250 micrometers tall, the insulative layer 34 is in the range of 25 to 50 micrometers thick, and the thickness of conductive layer 36 is in the range of 17 to 34 micrometers, but can be varied to more or less than that range based on the power requirements of LED die 22.
  • conductive layer 36 can include a surface metallization of nickel and gold. Vias 30 and
  • metal 52 can be electroplated up in the via 30 to adjust the height of the LED die 22.
  • the electroplated metal 52 can include or be composed of a plated layer of solder, thereby providing a precisely controlled thickness of solder as compared to typical solder paste deposition processes.
  • FIGS. 4 and 5 are enlarged sectional views of a wirebonded LED die 22' having both electrical contact pads 53 on the same side of the LED die, rather than on opposite sides of the diode as in the wirebonded embodiments of FIGS. 1-3B.
  • Light is emitted from the same side of the diode 22' that includes contact pads 53.
  • the conductive layer 36 is patterned similar to that in FIG. 2, with bond pad 43a being moved to the bottom of via 44' .
  • the LED die 22' is positioned within via 30 and thermally connected to conductive layer 36 by a thermally conductive adhesive or solder layer 60'.
  • Layer 60' is either electrically conductive or electrically insulative depending on the application and LED die 22' type.
  • FIGS. 4 and 5 Another embodiment of an illumination assembly according to the invention is illustrated in FIGS. 4 and 5.
  • FIGS. 4 and 5 The embodiment of FIGS. 4 and 5 is intended for use with LED dies 22" having both electrical contact pads 53 on the same side of the LED die, rather than on opposite sides of the diode as in the wirebonded embodiments of FIGS. 1-3B. Light is emitted from the side of the diode 22" that is opposite contact pads 53. As best seen in FIG. 4, the conductive layer 36 is patterned to define heat spreading elements 50 and bonding pads
  • FIG. 5 is an enlarged sectional view taken along line 5-5 of FIG. 4.
  • the LED die 22" is positioned within via 30 and electrically and thermally connected to bond pads 54a, 54b of conductive layer 36.
  • electrically conductive adhesives, anisotropically conductive adhesives, or solder re-flow are among the attachment methods that can be used to attach the LED die 22" to the conductive substrate 36.
  • the flip-chip-like embodiment allows two- dimensional wiring of LED die arrays while providing improved thermal transport through the relatively large heat spreader element 50 attached to the base of the LED die 22".
  • One advantage of the flip-chip-like embodiment is that the cantilevered bond pads 54a, 54b remain flat, while wirebond solutions may require a significant (100 micrometer) height in order to form the wire bond.
  • the flip-chip-like configuration adds robustness by eliminating the fragile wirebonds.
  • insulative layer 34 includes a second conductive layer 36' on its top surface.
  • the LED die 22 is positioned within via 30 and electrically and thermally connected to bond pads 56a, 56b of conductive layers 36 and 36', respectively.
  • Via 44 is filled with conductive material, such as metal, to establish an electrical connection between bond pad
  • FIGS. 8 and 9 Another embodiment of an illumination assembly 20 is illustrated in FIGS. 8 and 9. hi the embodiment of FIGS. 8 and 9, portions of insulative layer 34 are removed to expose conductive layer 36 in areas other than vias 30 and 44.
  • a thermally conductive encapsulant 70 (preferably having a thermal conductivity of greater than 1 W/m-K) is then placed in contact with the LED die and exposed portions of conductive layer 36 to provide an additional heat flow path from the LED die 22 to conductive layer 36.
  • the shape and areas of electrically insulative layer 34 that are removed is determined by manufacturing reliability issues.
  • the embodiment of FIGS. 8 and 9 is also particularly useful with LED dies that emit light from their sides when a transparent, thermally conductive encapsulant is used.
  • a fransparent thermally conductive encapsulant is also useful for encapsulating a phosphor layer (for color conversion) on or around the LED die without degrading the LED die light output.
  • the removal of insulation layer 34 and use of thermally conductive encapsulant 70 is useful for flip-chip-like embodiments like that shown in FIGS. 4 and 5.
  • a reflective or wavelength-selective material such as a metalized polymer or a multi-layer optical film (MOF) may be used as an insulative flexible substrate, with patterned electrical traces formed using traditional flexible circuit construction techniques.
  • layer 36' of the 2-metal substrate 32' of FIGS. 6 and 7 is a reflective material such as chrome or silver, and acts as a reflector, as well as (or instead of) a conductive circuit routing layer.
  • the reflective layer, with suitable vias may be laminated to the insulative substrate.
  • LED dies is also useful in a variety of applications.
  • the LED dies By mounting the LED dies on a reflective, flexible circuit, the utilization of the light is improved.
  • the arrays can be mounted to conform to the body of the lighting fixture, such as a parabolic shape to focus or direct light.
  • a LED die 22 can be attached to a planar MOF substrate in any of the manners described herein (FIG. 10A).
  • the multilayer optical film 80 that surrounds the LED die 22 is then folded to create a reflective concentrator 82 around the LED die 22.
  • Side and top views of reflective concentrator 82 are shown in FIGS 10B and 10C, respectively.
  • FIGS. 11 A-C the planar MOF substrate 80 with attached LED dies 22 (FIG.
  • FIGS. 1 IB and 11C Side and top views of tubular element 84 are shown in FIGS. 1 IB and 11C, respectively.
  • the various packages for LED dies described herein offer numerous advantages.
  • the primary advantage is excellent thermal transfer characteristics from the LED die to the conductive layer 36 of substrate 32 and thence to heat dissipation assembly 40.
  • An additional benefit of the described packages is the low CTE of the substrate material.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Led Device Packages (AREA)
  • Fastening Of Light Sources Or Lamp Holders (AREA)
  • Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
  • Structure Of Printed Boards (AREA)
PCT/US2004/037522 2003-12-02 2004-11-09 Light emitting diode based illumination assembly Ceased WO2005062382A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP04800966A EP1692722A2 (en) 2003-12-02 2004-11-09 Light emitting diode based illumination assembly
JP2006542591A JP2007513520A (ja) 2003-12-02 2004-11-09 発光ダイオードに基づく照明組立体

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/727,220 US20050116235A1 (en) 2003-12-02 2003-12-02 Illumination assembly
US10/727,220 2003-12-02

Publications (2)

Publication Number Publication Date
WO2005062382A2 true WO2005062382A2 (en) 2005-07-07
WO2005062382A3 WO2005062382A3 (en) 2005-12-08

Family

ID=34620577

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/037522 Ceased WO2005062382A2 (en) 2003-12-02 2004-11-09 Light emitting diode based illumination assembly

Country Status (7)

Country Link
US (1) US20050116235A1 (enExample)
EP (1) EP1692722A2 (enExample)
JP (1) JP2007513520A (enExample)
KR (1) KR20060121261A (enExample)
CN (1) CN1902757A (enExample)
TW (1) TW200528665A (enExample)
WO (1) WO2005062382A2 (enExample)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7163327B2 (en) 2002-12-02 2007-01-16 3M Innovative Properties Company Illumination system using a plurality of light sources
JP2007123160A (ja) * 2005-10-31 2007-05-17 Nichicon Corp 光源装置
JP2007287896A (ja) * 2006-04-17 2007-11-01 Nichia Chem Ind Ltd 半導体装置及びその製造方法
US7329887B2 (en) 2003-12-02 2008-02-12 3M Innovative Properties Company Solid state light device
US7403680B2 (en) 2003-12-02 2008-07-22 3M Innovative Properties Company Reflective light coupler
WO2008100298A1 (en) * 2007-02-14 2008-08-21 Lynk Labs, Inc. Led lighting device
JP2008282830A (ja) * 2007-05-08 2008-11-20 Opt Design:Kk プリント基板構造
US7456805B2 (en) 2003-12-18 2008-11-25 3M Innovative Properties Company Display including a solid state light device and method using same
JP2009533805A (ja) * 2006-04-14 2009-09-17 インティアー オートモーティヴ インコーポレイテッド 照明器
JP2010504645A (ja) * 2006-09-21 2010-02-12 スリーエム イノベイティブ プロパティズ カンパニー 熱伝導性ｌｅｄ組立体
KR100967206B1 (ko) * 2008-04-25 2010-07-05 서명덕 발광다이오드 발광소자
US9179510B2 (en) 2009-06-27 2015-11-03 Cooledge Lighting Inc. High efficiency LEDs and LED lamps
US9252373B2 (en) 2010-06-29 2016-02-02 Cooledge Lighting, Inc. Electronic devices with yielding substrates

Families Citing this family (123)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050103200A (ko) * 2003-01-27 2005-10-27 쓰리엠 이노베이티브 프로퍼티즈 컴파니 인광계 광원 요소와 제조 방법
EP2400566B1 (en) * 2003-11-04 2014-02-26 Panasonic Corporation Semiconductor light emitting device, lighting module, lighting apparatus
KR100583252B1 (ko) * 2003-12-29 2006-05-24 엘지.필립스 엘시디 주식회사 유기전계 발광소자와 그 제조방법
WO2011143510A1 (en) 2010-05-12 2011-11-17 Lynk Labs, Inc. Led lighting system
US10575376B2 (en) 2004-02-25 2020-02-25 Lynk Labs, Inc. AC light emitting diode and AC LED drive methods and apparatus
US10499465B2 (en) 2004-02-25 2019-12-03 Lynk Labs, Inc. High frequency multi-voltage and multi-brightness LED lighting devices and systems and methods of using same
US7255469B2 (en) * 2004-06-30 2007-08-14 3M Innovative Properties Company Phosphor based illumination system having a light guide and an interference reflector
US7204631B2 (en) * 2004-06-30 2007-04-17 3M Innovative Properties Company Phosphor based illumination system having a plurality of light guides and an interference reflector
US7182498B2 (en) * 2004-06-30 2007-02-27 3M Innovative Properties Company Phosphor based illumination system having a plurality of light guides and an interference reflector
US7204630B2 (en) * 2004-06-30 2007-04-17 3M Innovative Properties Company Phosphor based illumination system having a plurality of light guides and an interference reflector
US7213958B2 (en) * 2004-06-30 2007-05-08 3M Innovative Properties Company Phosphor based illumination system having light guide and an interference reflector
JP4031784B2 (ja) * 2004-07-28 2008-01-09 シャープ株式会社 発光モジュールおよびその製造方法
US20060038485A1 (en) * 2004-08-18 2006-02-23 Harvatek Corporation Laminated light-emitting diode display device and manufacturing method thereof
US7390097B2 (en) * 2004-08-23 2008-06-24 3M Innovative Properties Company Multiple channel illumination system
US20060086945A1 (en) * 2004-10-27 2006-04-27 Harvatek Corporation Package structure for optical-electrical semiconductor
US7303315B2 (en) * 2004-11-05 2007-12-04 3M Innovative Properties Company Illumination assembly using circuitized strips
US7285802B2 (en) * 2004-12-21 2007-10-23 3M Innovative Properties Company Illumination assembly and method of making same
US20080278954A1 (en) * 2005-04-05 2008-11-13 Tir Systems Ltd. Mounting Assembly for Optoelectronic Devices
US7293906B2 (en) * 2005-05-23 2007-11-13 Avago Technologies Ecbu Ip (Singapore) Pte Ltd Light source adapted for LCD back-lit displays
US7505275B2 (en) * 2005-11-04 2009-03-17 Graftech International Holdings Inc. LED with integral via
US7889502B1 (en) * 2005-11-04 2011-02-15 Graftech International Holdings Inc. Heat spreading circuit assembly
EP1996860A2 (en) * 2006-01-31 2008-12-03 3M Innovative Properties Company Led illumination assembly with compliant foil construction
SM200600005A (it) * 2006-02-15 2007-08-22 Idealed.It S R L Unita' luminosa led ad alta potenza, nonche' apparato di illuminazione comprendente tale unita'
US7710045B2 (en) 2006-03-17 2010-05-04 3M Innovative Properties Company Illumination assembly with enhanced thermal conductivity
KR100764388B1 (ko) * 2006-03-17 2007-10-05 삼성전기주식회사 양극산화 금속기판 모듈
TWI289947B (en) * 2006-03-17 2007-11-11 Ind Tech Res Inst Bendable solid state planar light source, a flexible substrate therefor, and a manufacturing method therewith
EP1999800A1 (en) * 2006-03-21 2008-12-10 Koninklijke Philips Electronics N.V. Light emitting diode module and method for the manufacturing of such an led module
US20070252161A1 (en) * 2006-03-31 2007-11-01 3M Innovative Properties Company Led mounting structures
TWI314366B (en) * 2006-04-28 2009-09-01 Delta Electronics Inc Light emitting apparatus
US20070257271A1 (en) * 2006-05-02 2007-11-08 3M Innovative Properties Company Led package with encapsulated converging optical element
US20070257270A1 (en) * 2006-05-02 2007-11-08 3M Innovative Properties Company Led package with wedge-shaped optical element
US7525126B2 (en) 2006-05-02 2009-04-28 3M Innovative Properties Company LED package with converging optical element
US7390117B2 (en) * 2006-05-02 2008-06-24 3M Innovative Properties Company LED package with compound converging optical element
US7953293B2 (en) * 2006-05-02 2011-05-31 Ati Technologies Ulc Field sequence detector, method and video device
TWI350409B (en) * 2006-07-06 2011-10-11 Nat Univ Chung Hsing Flexible and could be rolling-up area lights module and the method of producing thereof
US20080012034A1 (en) * 2006-07-17 2008-01-17 3M Innovative Properties Company Led package with converging extractor
JP2008053693A (ja) * 2006-07-28 2008-03-06 Sanyo Electric Co Ltd 半導体モジュール、携帯機器、および半導体モジュールの製造方法
DE102007004303A1 (de) * 2006-08-04 2008-02-07 Osram Opto Semiconductors Gmbh Dünnfilm-Halbleiterbauelement und Bauelement-Verbund
US20080074884A1 (en) * 2006-09-25 2008-03-27 Thye Linn Mok Compact high-intensty LED-based light source and method for making the same
US20080117619A1 (en) * 2006-11-21 2008-05-22 Siew It Pang Light source utilizing a flexible circuit carrier and flexible reflectors
US20080158886A1 (en) * 2006-12-29 2008-07-03 Siew It Pang Compact High-Intensity LED Based Light Source
DE102007004304A1 (de) * 2007-01-29 2008-07-31 Osram Opto Semiconductors Gmbh Dünnfilm-Leuchtdioden-Chip und Verfahren zur Herstellung eines Dünnfilm-Leuchtdioden-Chips
US7806560B2 (en) * 2007-01-31 2010-10-05 3M Innovative Properties Company LED illumination assembly with compliant foil construction
US7535030B2 (en) * 2007-05-22 2009-05-19 Hsiang-Chou Lin LED lamp with exposed heat-conductive fins
EP1998101B2 (en) * 2007-05-30 2019-09-25 OSRAM GmbH Lighting device
TWI337783B (en) * 2007-07-06 2011-02-21 Harvatek Corp Through hole type led chip package structure using ceramic material as a substrate and method of the same
US11317495B2 (en) 2007-10-06 2022-04-26 Lynk Labs, Inc. LED circuits and assemblies
US11297705B2 (en) 2007-10-06 2022-04-05 Lynk Labs, Inc. Multi-voltage and multi-brightness LED lighting devices and methods of using same
JP2009099715A (ja) * 2007-10-16 2009-05-07 Fujikura Ltd 発光装置
DE102008021618A1 (de) * 2007-11-28 2009-06-04 Osram Opto Semiconductors Gmbh Chipanordnung, Anschlussanordnung, LED sowie Verfahren zur Herstellung einer Chipanordnung
EP2700867B1 (en) * 2007-12-21 2016-08-31 3M Innovative Properties Company Low profile flexible cable lighting assemblies and methods of making same
KR101418374B1 (ko) * 2008-01-29 2014-07-11 삼성디스플레이 주식회사 인쇄 회로 기판 및 이를 포함하는 백라이트 유니트, 액정표시 장치
CN101572990B (zh) * 2008-04-28 2012-12-19 鸿富锦精密工业（深圳）有限公司 电路板原板
US7845829B2 (en) * 2008-05-20 2010-12-07 Abl Ip Holding Llc Enclosures for LED circuit boards
JP5391767B2 (ja) 2008-05-30 2014-01-15 東芝ライテック株式会社 発光装置及び照明器具
DE102008035471B4 (de) * 2008-07-30 2010-06-10 Novaled Ag Lichtemittierende Vorrichtung
CN101673789B (zh) * 2008-09-12 2011-08-17 光海科技股份有限公司 发光二极管封装基板结构、制法及其封装结构
GB2464668A (en) * 2008-10-20 2010-04-28 Sensitive Electronic Co Ltd Thin light emitting diode circuit substrate and lamp strip
US8791471B2 (en) * 2008-11-07 2014-07-29 Cree Hong Kong Limited Multi-chip light emitting diode modules
DE102009006184A1 (de) 2009-01-27 2010-07-29 Vishay Electronic Gmbh Beleuchtungseinheit
US8587014B2 (en) * 2009-03-02 2013-11-19 Kingbright Electronic Co., Ltd. LED packaging structure with blind hole welding device
US8955580B2 (en) * 2009-08-14 2015-02-17 Wah Hong Industrial Corp. Use of a graphite heat-dissipation device including a plating metal layer
TW201035513A (en) * 2009-03-25 2010-10-01 Wah Hong Ind Corp Method for manufacturing heat dissipation interface device and product thereof
KR20110003792A (ko) * 2009-07-06 2011-01-13 주식회사 디지아이 칼라 인쇄회로기판의 제조방법
US8235549B2 (en) * 2009-12-09 2012-08-07 Tyco Electronics Corporation Solid state lighting assembly
US12279345B2 (en) 2009-12-28 2025-04-15 Lynk Labs, Inc. Light emitting diode and LED drive apparatus
US8653539B2 (en) 2010-01-04 2014-02-18 Cooledge Lighting, Inc. Failure mitigation in arrays of light-emitting devices
US9480133B2 (en) 2010-01-04 2016-10-25 Cooledge Lighting Inc. Light-emitting element repair in array-based lighting devices
EP2346100B1 (en) * 2010-01-15 2019-05-22 LG Innotek Co., Ltd. Light emitting apparatus and lighting system
US20110062482A1 (en) * 2010-01-20 2011-03-17 Bridgelux, Inc. Apparatus And Method For Enhancing Connectability In LED Array Using Metal Traces
US8519426B2 (en) 2010-08-09 2013-08-27 Lg Innotek Co., Ltd. Light emitting device and lighting system having the same
KR101114719B1 (ko) * 2010-08-09 2012-02-29 엘지이노텍 주식회사 발광 소자 및 이를 구비한 조명 시스템
KR20120015651A (ko) * 2010-08-12 2012-02-22 서울옵토디바이스주식회사 개선된 광 추출 효율을 갖는 발광 다이오드
US9179543B2 (en) 2010-11-03 2015-11-03 3M Innovative Properties Company Flexible LED device with wire bond free die
TWM401207U (en) * 2010-11-03 2011-04-01 Harvatek Corp Light-emitting diode packaging structure
JP5638922B2 (ja) * 2010-11-17 2014-12-10 パナソニック株式会社 発光装置および発光装置を備える照明装置
JP6104174B2 (ja) 2010-12-29 2017-03-29 スリーエム イノベイティブ プロパティズ カンパニー リモート蛍光体ｌｅｄ構造
JP6109076B2 (ja) * 2010-12-29 2017-04-05 スリーエム イノベイティブ プロパティズ カンパニー Ｌｅｄ色結合器
US9232634B2 (en) 2011-01-17 2016-01-05 Canon Components, Inc. Flexible circuit board for mounting light emitting element, illumination apparatus, and vehicle lighting apparatus
JP5274586B2 (ja) 2011-01-17 2013-08-28 キヤノン・コンポーネンツ株式会社 フレキシブル回路基板
WO2012112666A2 (en) * 2011-02-18 2012-08-23 3M Innovate Properties Company Light emitting semiconductor device having multi-level substrate
RU2605757C2 (ru) 2011-03-03 2016-12-27 Филипс Лайтинг Холдинг Б.В. Сборка монтажной платы
JP2012191114A (ja) 2011-03-14 2012-10-04 Sharp Corp Ｌｅｄ実装用基板及びｌｅｄモジュールの製造方法
KR101357583B1 (ko) * 2011-07-29 2014-02-05 엘지이노텍 주식회사 조명장치 및 이를 이용한 액정표시장치
WO2013026053A1 (en) 2011-08-18 2013-02-21 Lynk Labs, Inc. Devices and systems having ac led circuits and methods of driving the same
CN102354720A (zh) * 2011-10-26 2012-02-15 苏州东山精密制造股份有限公司 一种led的封装方法及led封装结构
US9247597B2 (en) 2011-12-02 2016-01-26 Lynk Labs, Inc. Color temperature controlled and low THD LED lighting devices and systems and methods of driving the same
CN102437148A (zh) * 2011-12-16 2012-05-02 苏州晶品光电科技有限公司 柔性电路基板led二维阵列光源
JP2013157341A (ja) * 2012-01-05 2013-08-15 Canon Components Inc Ｌｅｄ照明装置
EP2834559B1 (en) * 2012-04-05 2016-03-30 Koninklijke Philips N.V. Led light structure
USD711585S1 (en) 2012-05-23 2014-08-19 Paul Jabra LED strip with flexible support
US9231178B2 (en) 2012-06-07 2016-01-05 Cooledge Lighting, Inc. Wafer-level flip chip device packages and related methods
CN103629557B (zh) * 2012-08-20 2016-12-21 苏州璨宇光学有限公司 光源模块及其制作方法
DE102012214887A1 (de) * 2012-08-22 2014-02-27 Ridi - Leuchten Gmbh LED-Flächenstrahler
CN103929883B (zh) * 2013-01-15 2017-01-25 南京尚孚电子电路有限公司 一种单晶cob封装碗杯孔状铝基板的制作方法
KR102085870B1 (ko) * 2013-08-21 2020-03-09 엘지이노텍 주식회사 칩 패키지
TW201511347A (zh) * 2013-09-10 2015-03-16 菱生精密工業股份有限公司 發光二極體封裝結構及其製造方法
JP5987804B2 (ja) * 2013-09-10 2016-09-07 ウシオ電機株式会社 発光モジュール装置
US10692843B2 (en) 2013-12-04 2020-06-23 3M Innovative Properties Company Flexible light emitting semiconductor device with large area conduit
KR20160100359A (ko) * 2013-12-18 2016-08-23 플렉스브라이트 오와이 발광 필름 구조
JP2015153981A (ja) * 2014-02-18 2015-08-24 日亜化学工業株式会社 発光装置
US9812625B2 (en) 2014-02-18 2017-11-07 Nichia Corporation Light-emitting device having resin member with conductive particles
SG11201609088VA (en) * 2014-05-15 2016-11-29 3M Innovative Properties Co Flexible circuit on reflective substrate
CN104105348A (zh) * 2014-06-16 2014-10-15 张龙 一种铝基板加工工艺
KR101529934B1 (ko) 2014-07-01 2015-06-18 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치
JP2016122815A (ja) * 2014-12-25 2016-07-07 大日本印刷株式会社 Ｌｅｄ素子用基板
WO2016104609A1 (ja) * 2014-12-25 2016-06-30 大日本印刷株式会社 Ｌｅｄ素子用基板、ｌｅｄ実装モジュール、及び、それらを用いたｌｅｄ表示装置
US10622785B2 (en) * 2015-01-30 2020-04-14 University Of Southern California Micro-VCSELs in thermally engineered flexible composite assemblies
CN104716081B (zh) * 2015-03-26 2017-09-15 京东方科技集团股份有限公司 柔性装置及其制作方法
US11167310B2 (en) * 2015-05-13 2021-11-09 The Boeing Company Sealing assembly for forming sealant coating on a fastener, the sealing assembly comprising a light generator and a forming cup associated with the light generator
DE102015109876A1 (de) * 2015-06-19 2016-12-22 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Bauelements und optoelektronisches Bauelement
JP6728676B2 (ja) * 2015-12-26 2020-07-22 日亜化学工業株式会社 発光装置
US10257932B2 (en) * 2016-02-16 2019-04-09 Microsoft Technology Licensing, Llc. Laser diode chip on printed circuit board
US9872379B2 (en) 2016-03-16 2018-01-16 Microsoft Technology Licensing Llc Flexible printed circuit with radio frequency choke
US9839117B2 (en) 2016-04-11 2017-12-05 Microsoft Technology Licensing, Llc Flexible printed circuit with enhanced ground plane connectivity
TWI616616B (zh) 2017-03-20 2018-03-01 蔡高德 發光二極體面光源燈具
US11079077B2 (en) 2017-08-31 2021-08-03 Lynk Labs, Inc. LED lighting system and installation methods
EP3714203B1 (en) * 2017-11-30 2022-02-16 Corvi Led Private Limited Light assembly module and light assembly module system
EP3503694B1 (de) * 2017-12-21 2024-07-03 ZKW Group GmbH Verfahren zum herstellen einer wärmeleitenden verbindung zwischen einem leistungsbauteil und einer metallischen schicht eines schaltungsträgers
US10957832B2 (en) * 2018-10-22 2021-03-23 General Electric Company Electronics package for light emitting semiconductor devices and method of manufacturing thereof
CN109630910A (zh) * 2018-12-26 2019-04-16 江门市品而亮照明有限公司 一种发光体及led灯
CN113450653B (zh) * 2021-06-30 2023-03-24 武汉天马微电子有限公司 可拉伸显示面板及其控制方法、显示装置
WO2025147433A1 (en) * 2024-01-02 2025-07-10 Worcester Polytechnic Institute Multilayer stretchable printed circuit board

Family Cites Families (110)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3825335A (en) * 1973-01-04 1974-07-23 Polaroid Corp Variable color photographic lighting system
US3902059A (en) * 1974-02-15 1975-08-26 Esquire Inc Light reflector system
US4254453A (en) * 1978-08-25 1981-03-03 General Instrument Corporation Alpha-numeric display array and method of manufacture
DE3069386D1 (en) * 1979-12-22 1984-11-08 Lucas Ind Plc Motor vehicle lamp reflector
JPS6019564A (ja) * 1983-07-13 1985-01-31 Fuji Photo Film Co Ltd サイドプリント装置
US5693043A (en) * 1985-03-22 1997-12-02 Massachusetts Institute Of Technology Catheter for laser angiosurgery
US4755918A (en) * 1987-04-06 1988-07-05 Lumitex, Inc. Reflector system
US4897771A (en) * 1987-11-24 1990-01-30 Lumitex, Inc. Reflector and light system
US5146248A (en) * 1987-12-23 1992-09-08 North American Philips Corporation Light valve projection system with improved illumination
US5140248A (en) * 1987-12-23 1992-08-18 Allen-Bradley Company, Inc. Open loop motor control with both voltage and current regulation
FR2630550A1 (fr) * 1988-04-22 1989-10-27 Radiotechnique Compelec Procede de montage d'elements optiques sur un support et circuit optique ainsi obtenu
US4964025A (en) * 1988-10-05 1990-10-16 Hewlett-Packard Company Nonimaging light source
JPH081964B2 (ja) * 1989-01-18 1996-01-10 株式会社小糸製作所 可撓性を有する表示装置
US5155336A (en) * 1990-01-19 1992-10-13 Applied Materials, Inc. Rapid thermal heating apparatus and method
JPH0437596A (ja) * 1990-06-01 1992-02-07 Toshiba Corp 配線基板装置
US5227008A (en) * 1992-01-23 1993-07-13 Minnesota Mining And Manufacturing Company Method for making flexible circuits
US5299222A (en) * 1992-03-11 1994-03-29 Lightwave Electronics Multiple diode laser stack for pumping a solid-state laser
US5301090A (en) * 1992-03-16 1994-04-05 Aharon Z. Hed Luminaire
US5226723A (en) * 1992-05-11 1993-07-13 Chen Der Jong Light emitting diode display
US5293437A (en) * 1992-06-03 1994-03-08 Visual Optics, Inc. Fiber optic display with direct driven optical fibers
US5265792A (en) * 1992-08-20 1993-11-30 Hewlett-Packard Company Light source and technique for mounting light emitting diodes
US5317484A (en) * 1993-02-01 1994-05-31 General Electric Company Collection optics for high brightness discharge light source
US5810469A (en) * 1993-03-26 1998-09-22 Weinreich; Steve Combination light concentrating and collimating device and light fixture and display screen employing the same
US5534718A (en) * 1993-04-12 1996-07-09 Hsi-Huang Lin LED package structure of LED display
US5420768A (en) * 1993-09-13 1995-05-30 Kennedy; John Portable led photocuring device
DE4341234C2 (de) * 1993-12-03 2002-09-12 Bosch Gmbh Robert Beleuchtungseinrichtung für Fahrzeuge
US5882774A (en) * 1993-12-21 1999-03-16 Minnesota Mining And Manufacturing Company Optical film
US5580471A (en) * 1994-03-30 1996-12-03 Panasonic Technologies, Inc. Apparatus and method for material treatment and inspection using fiber-coupled laser diode
JPH088463A (ja) * 1994-06-21 1996-01-12 Sharp Corp 薄型ｌｅｄドットマトリックスユニット
DE4429913C1 (de) * 1994-08-23 1996-03-21 Fraunhofer Ges Forschung Vorrichtung und Verfahren zum Plattieren
DE4430778C2 (de) * 1994-08-30 2000-01-27 Sick Ag Tubus
US5713654A (en) * 1994-09-28 1998-02-03 Sdl, Inc. Addressable laser vehicle lights
US5574817A (en) * 1995-06-01 1996-11-12 Minnesota Mining And Manufacturing Company Fiber optic ribbon cable assembly and method of manufacturing same
US5611017A (en) * 1995-06-01 1997-03-11 Minnesota Mining And Manufacturing Co. Fiber optic ribbon cable with pre-installed locations for subsequent connectorization
US5629996A (en) * 1995-11-29 1997-05-13 Physical Optics Corporation Universal remote lighting system with nonimaging total internal reflection beam transformer
US6239868B1 (en) * 1996-01-02 2001-05-29 Lj Laboratories, L.L.C. Apparatus and method for measuring optical characteristics of an object
US5661839A (en) * 1996-03-22 1997-08-26 The University Of British Columbia Light guide employing multilayer optical film
US6045240A (en) * 1996-06-27 2000-04-04 Relume Corporation LED lamp assembly with means to conduct heat away from the LEDS
US5816694A (en) * 1996-06-28 1998-10-06 General Electric Company Square distribution reflector
US6608332B2 (en) * 1996-07-29 2003-08-19 Nichia Kagaku Kogyo Kabushiki Kaisha Light emitting device and display
US5808794A (en) * 1996-07-31 1998-09-15 Weber; Michael F. Reflective polarizers having extended red band edge for controlled off axis color
US5709463A (en) * 1996-08-13 1998-01-20 Delco Electronics Corporation Backlighting for bright liquid crystal display
US5727108A (en) * 1996-09-30 1998-03-10 Troy Investments, Inc. High efficiency compound parabolic concentrators and optical fiber powered spot luminaire
US6104446A (en) * 1996-12-18 2000-08-15 Blankenbecler; Richard Color separation optical plate for use with LCD panels
JP3894613B2 (ja) * 1997-03-14 2007-03-22 株式会社フジクラ フレキシブルプリント配線板
CN1217130C (zh) * 1997-06-30 2005-08-31 株式会社丰臣 操作机器用面板
US6952504B2 (en) * 2001-12-21 2005-10-04 Neophotonics Corporation Three dimensional engineering of planar optical structures
US5967653A (en) * 1997-08-06 1999-10-19 Miller; Jack V. Light projector with parabolic transition format coupler
US6340824B1 (en) * 1997-09-01 2002-01-22 Kabushiki Kaisha Toshiba Semiconductor light emitting device including a fluorescent material
US5909037A (en) * 1998-01-12 1999-06-01 Hewlett-Packard Company Bi-level injection molded leadframe
US6200134B1 (en) * 1998-01-20 2001-03-13 Kerr Corporation Apparatus and method for curing materials with radiation
CH689339A5 (de) * 1998-02-12 1999-02-26 Staufert Gerhard Konfektionierbares LED-Leuchpaneel.
JPH11284233A (ja) * 1998-03-27 1999-10-15 Stanley Electric Co Ltd 平面実装型ｌｅｄ素子
US5959316A (en) * 1998-09-01 1999-09-28 Hewlett-Packard Company Multiple encapsulation of phosphor-LED devices
WO2000036336A1 (en) * 1998-12-17 2000-06-22 Koninklijke Philips Electronics N.V. Light engine
US6414801B1 (en) * 1999-01-14 2002-07-02 Truck-Lite Co., Inc. Catadioptric light emitting diode assembly
EP1031326A1 (fr) * 1999-02-05 2000-08-30 Jean-Michel Decaudin Dispositif permettant la photo-activation de matériaux composites photosensibles utilisés notamment dans le domaine dentaire
US6172810B1 (en) * 1999-02-26 2001-01-09 3M Innovative Properties Company Retroreflective articles having polymer multilayer reflective coatings
US6155699A (en) * 1999-03-15 2000-12-05 Agilent Technologies, Inc. Efficient phosphor-conversion led structure
US6556734B1 (en) * 1999-04-19 2003-04-29 Gemfire Corporation Electrical connection scheme for optical devices
US6193392B1 (en) * 1999-05-27 2001-02-27 Pervaiz Lodhie Led array with a multi-directional, multi-functional light reflector
TW493054B (en) * 1999-06-25 2002-07-01 Koninkl Philips Electronics Nv Vehicle headlamp and a vehicle
JP4517271B2 (ja) * 1999-09-10 2010-08-04 株式会社ニコン レーザ装置を備えた露光装置
ES2205755T3 (es) * 1999-10-15 2004-05-01 Automotive Lighting Italia Spa Dispositivo de alumbrado para vehiculos automoviles con una superficie reflectante altamente discontinua.
US6784982B1 (en) * 1999-11-04 2004-08-31 Regents Of The University Of Minnesota Direct mapping of DNA chips to detector arrays
US6350041B1 (en) * 1999-12-03 2002-02-26 Cree Lighting Company High output radial dispersing lamp using a solid state light source
TW465123B (en) * 2000-02-02 2001-11-21 Ind Tech Res Inst High power white light LED
US6318886B1 (en) * 2000-02-11 2001-11-20 Whelen Engineering Company High flux led assembly
DE10006738C2 (de) * 2000-02-15 2002-01-17 Osram Opto Semiconductors Gmbh Lichtemittierendes Bauelement mit verbesserter Lichtauskopplung und Verfahren zu seiner Herstellung
US6224216B1 (en) * 2000-02-18 2001-05-01 Infocus Corporation System and method employing LED light sources for a projection display
JP4406490B2 (ja) * 2000-03-14 2010-01-27 株式会社朝日ラバー 発光ダイオード
US6603258B1 (en) * 2000-04-24 2003-08-05 Lumileds Lighting, U.S. Llc Light emitting diode device that emits white light
US6570186B1 (en) * 2000-05-10 2003-05-27 Toyoda Gosei Co., Ltd. Light emitting device using group III nitride compound semiconductor
DE10025563B4 (de) * 2000-05-24 2005-12-01 Osram Opto Semiconductors Gmbh Modul für die Anordnung von elektrischen lichtemittierenden Elementen,integrierbar in ein Leuchtengehäuse,und Verfahren zur Herstellung eines derartigen Moduls
DE10033502A1 (de) * 2000-07-10 2002-01-31 Osram Opto Semiconductors Gmbh Optoelektronisches Modul, Verfahren zu dessen Herstellung und dessen Verwendung
US6527411B1 (en) * 2000-08-01 2003-03-04 Visteon Corporation Collimating lamp
US6614103B1 (en) * 2000-09-01 2003-09-02 General Electric Company Plastic packaging of LED arrays
DE10051159C2 (de) * 2000-10-16 2002-09-19 Osram Opto Semiconductors Gmbh LED-Modul, z.B. Weißlichtquelle
AT410266B (de) * 2000-12-28 2003-03-25 Tridonic Optoelectronics Gmbh Lichtquelle mit einem lichtemittierenden element
DE10065624C2 (de) * 2000-12-29 2002-11-14 Hans Kragl Kopplungsanordnung zum optischen Koppeln eines Lichtwellenleiters mit einem elektro-optischen oder opto-elektrischen Halbleiterwandler
US6541800B2 (en) * 2001-02-22 2003-04-01 Weldon Technologies, Inc. High power LED
US20020126479A1 (en) * 2001-03-08 2002-09-12 Ball Semiconductor, Inc. High power incoherent light source with laser array
US20020171047A1 (en) * 2001-03-28 2002-11-21 Chan Kin Foeng Integrated laser diode array and applications
CN1212676C (zh) * 2001-04-12 2005-07-27 松下电工株式会社 使用led的光源装置及其制造方法
JP3962219B2 (ja) * 2001-04-26 2007-08-22 貴志 山田 偏光を用いた光治療器
US7001057B2 (en) * 2001-05-23 2006-02-21 Ivoclar Vivadent A.G. Lighting apparatus for guiding light onto a light polymerizable piece to effect hardening thereof
DE10127542C2 (de) * 2001-05-31 2003-06-18 Infineon Technologies Ag Kopplungsanordnung zur optischen Kopplung eines Lichtleiters an einen Lichtempfänger
US6777870B2 (en) * 2001-06-29 2004-08-17 Intel Corporation Array of thermally conductive elements in an oled display
TW567619B (en) * 2001-08-09 2003-12-21 Matsushita Electric Industrial Co Ltd LED lighting apparatus and card-type LED light source
US6921920B2 (en) * 2001-08-31 2005-07-26 Smith & Nephew, Inc. Solid-state light source
US20030068113A1 (en) * 2001-09-12 2003-04-10 Siegfried Janz Method for polarization birefringence compensation in a waveguide demultiplexer using a compensator with a high refractive index capping layer.
EP1451872B1 (de) * 2001-09-13 2007-03-07 Lucea AG Leuchtdioden-leuchtpaneel und leiterplatte
JP4067801B2 (ja) * 2001-09-18 2008-03-26 松下電器産業株式会社 照明装置
US20030057421A1 (en) * 2001-09-27 2003-03-27 Tzer-Perng Chen High flux light emitting diode having flip-chip type light emitting diode chip with a transparent substrate
EP1438627A1 (de) * 2001-10-10 2004-07-21 Siemens Aktiengesellschaft Anzeigevorrichtung
US7144248B2 (en) * 2001-10-18 2006-12-05 Irwin Dean S Device for oral UV photo-therapy
US20030091277A1 (en) * 2001-11-15 2003-05-15 Wenhui Mei Flattened laser scanning system
US6560038B1 (en) * 2001-12-10 2003-05-06 Teledyne Lighting And Display Products, Inc. Light extraction from LEDs with light pipes
US6960035B2 (en) * 2002-04-10 2005-11-01 Fuji Photo Film Co., Ltd. Laser apparatus, exposure head, exposure apparatus, and optical fiber connection method
CN1659479A (zh) * 2002-04-10 2005-08-24 富士胶片株式会社 曝光头及曝光装置和它的应用
FR2840151B1 (fr) * 2002-05-27 2006-09-01 Valeo Vision Dispositif support de diode electroluminescente pour systeme de signalisation automobile, et procede de fabrication d'un tel dispositif
JP3707688B2 (ja) * 2002-05-31 2005-10-19 スタンレー電気株式会社 発光装置およびその製造方法
US20030235800A1 (en) * 2002-06-24 2003-12-25 Qadar Steven Abdel LED curing light
DE10228634A1 (de) * 2002-06-26 2004-01-22 Osram Opto Semiconductors Gmbh Oberflächenmontierbare Miniatur-Lumineszenz-und/oder Photo-Diode und Verfahren zu deren Herstellung
US7029277B2 (en) * 2002-10-17 2006-04-18 Coltene / Whaledent Inc. Curing light with engineered spectrum and power compressor guide
US7211299B2 (en) * 2003-01-09 2007-05-01 Con-Trol-Cure, Inc. UV curing method and apparatus
US20040164325A1 (en) * 2003-01-09 2004-08-26 Con-Trol-Cure, Inc. UV curing for ink jet printer
CN101789482B (zh) * 2003-03-10 2013-04-17 丰田合成株式会社 固体元件装置及其制造方法
US6950454B2 (en) * 2003-03-24 2005-09-27 Eastman Kodak Company Electronic imaging system using organic laser array illuminating an area light valve
US7300164B2 (en) * 2004-08-26 2007-11-27 Hewlett-Packard Development Company, L.P. Morphing light guide

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7163327B2 (en) 2002-12-02 2007-01-16 3M Innovative Properties Company Illumination system using a plurality of light sources
US7329887B2 (en) 2003-12-02 2008-02-12 3M Innovative Properties Company Solid state light device
US7403680B2 (en) 2003-12-02 2008-07-22 3M Innovative Properties Company Reflective light coupler
US7456805B2 (en) 2003-12-18 2008-11-25 3M Innovative Properties Company Display including a solid state light device and method using same
JP2007123160A (ja) * 2005-10-31 2007-05-17 Nichicon Corp 光源装置
JP2009533805A (ja) * 2006-04-14 2009-09-17 インティアー オートモーティヴ インコーポレイテッド 照明器
JP2007287896A (ja) * 2006-04-17 2007-11-01 Nichia Chem Ind Ltd 半導体装置及びその製造方法
JP2010504645A (ja) * 2006-09-21 2010-02-12 スリーエム イノベイティブ プロパティズ カンパニー 熱伝導性ｌｅｄ組立体
WO2008100298A1 (en) * 2007-02-14 2008-08-21 Lynk Labs, Inc. Led lighting device
JP2008282830A (ja) * 2007-05-08 2008-11-20 Opt Design:Kk プリント基板構造
KR100967206B1 (ko) * 2008-04-25 2010-07-05 서명덕 발광다이오드 발광소자
US9179510B2 (en) 2009-06-27 2015-11-03 Cooledge Lighting Inc. High efficiency LEDs and LED lamps
US9431462B2 (en) 2009-06-27 2016-08-30 Cooledge Lighting, Inc. High efficiency LEDs and LED lamps
US9559150B2 (en) 2009-06-27 2017-01-31 Cooledge Lighting Inc. High efficiency LEDs and LED lamps
US9765936B2 (en) 2009-06-27 2017-09-19 Cooledge Lighting Inc. High efficiency LEDs and LED lamps
US9966414B2 (en) 2009-06-27 2018-05-08 Cooledge Lighting Inc. High efficiency LEDs and LED lamps
US10281091B2 (en) 2009-06-27 2019-05-07 Cooledge Lighting Inc. High efficiency LEDs and LED lamps
US10910522B2 (en) 2009-06-27 2021-02-02 Cooledge Lighting Inc. High efficiency LEDs and LED lamps
US11415272B2 (en) 2009-06-27 2022-08-16 Cooledge Lighting, Inc. High efficiency LEDs and LED lamps
US9252373B2 (en) 2010-06-29 2016-02-02 Cooledge Lighting, Inc. Electronic devices with yielding substrates
US9426860B2 (en) 2010-06-29 2016-08-23 Cooledge Lighting, Inc. Electronic devices with yielding substrates

Also Published As

Publication number Publication date
TW200528665A (en) 2005-09-01
WO2005062382A3 (en) 2005-12-08
CN1902757A (zh) 2007-01-24
EP1692722A2 (en) 2006-08-23
US20050116235A1 (en) 2005-06-02
JP2007513520A (ja) 2007-05-24
KR20060121261A (ko) 2006-11-28

Similar Documents

Publication Publication Date Title
US20050116235A1 (en) Illumination assembly
US7728341B2 (en) Illumination device for providing directionally guided light
TWI295860B (enExample)
EP1680816B1 (en) Power surface mount light emitting die package
CN100414698C (zh) 表面安装电源的发光晶粒封装
KR101934075B1 (ko) Ｌｅｄ 적용을 위한 필름 시스템
US8047686B2 (en) Multiple light-emitting element heat pipe assembly
JP4675906B2 (ja) 発光素子搭載用基板、発光素子収納用パッケージ、発光装置および照明装置
US20120112215A1 (en) LED-Based Light Source Utilizing Asymmetric Conductors
US20060139932A1 (en) Light-emitting unit with enhanced thermal dissipation and method for fabricating the same
JP2005158957A (ja) 発光装置
US20110084612A1 (en) Hybrid chip-on-heatsink device and methods
WO2009139787A1 (en) Light-emitting diode package assembly
JP2013529370A (ja) Ｌｅｄ光モジュール
US20100301359A1 (en) Light Emitting Diode Package Structure
US20050047140A1 (en) Lighting device composed of a thin light emitting diode module
US20090309106A1 (en) Light-emitting device module with a substrate and methods of forming it
JP6030905B2 (ja) 発光半導体を相互接続するためのオーバーレイ回路構造
KR101123241B1 (ko) 고방열 특성을 갖는 발광 다이오드 모듈 및 그 제조 방법
CN100568558C (zh) 电致发光模块
KR102085649B1 (ko) 발광 반도체를 상호 접속하기 위한 오버레이 회로 구조체
KR101995538B1 (ko) 발광 반도체를 상호 접속하기 위한 오버레이 회로 구조체
EP2713396B1 (en) Overlay circuit structure for interconnecting semiconductor light emitting devices and method of manufacturing the same

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
DPEN Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed from 20040101)
WWE Wipo information: entry into national phase

Ref document number: 2006542591

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

WWW Wipo information: withdrawn in national office

Country of ref document: DE

WWE Wipo information: entry into national phase

Ref document number: 2004800966

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 1020067013164

Country of ref document: KR

WWE Wipo information: entry into national phase

Ref document number: 200480039911.X

Country of ref document: CN

WWP Wipo information: published in national office

Ref document number: 2004800966

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 1020067013164

Country of ref document: KR