WO2005041285A1 - シャワーヘッド及びこれを用いた成膜装置 - Google Patents

シャワーヘッド及びこれを用いた成膜装置 Download PDF

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Publication number
WO2005041285A1
WO2005041285A1 PCT/JP2004/015716 JP2004015716W WO2005041285A1 WO 2005041285 A1 WO2005041285 A1 WO 2005041285A1 JP 2004015716 W JP2004015716 W JP 2004015716W WO 2005041285 A1 WO2005041285 A1 WO 2005041285A1
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WO
WIPO (PCT)
Prior art keywords
gas injection
shower head
gas
support
injection ports
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2004/015716
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English (en)
French (fr)
Japanese (ja)
Inventor
Manabu Amikura
Teruo Iwata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to US10/574,531 priority Critical patent/US7931749B2/en
Publication of WO2005041285A1 publication Critical patent/WO2005041285A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles

Definitions

  • the present invention relates to a shower head used to supply a gas into a processing container for depositing a thin film on a surface of a processing target such as a semiconductor wafer, and a film forming apparatus using such a shower head. .
  • an object to be processed such as a semiconductor wafer is subjected to various single-wafer processes such as a film forming process, an etching process, a heat treatment, a reforming process, and a crystallization process.
  • various single-wafer processes such as a film forming process, an etching process, a heat treatment, a reforming process, and a crystallization process.
  • the necessary processing gas corresponding to the type of processing is introduced into the processing container.
  • a raw material gas and supporting gases such as an oxidizing gas and a reducing gas are supplied from a shower head provided on a ceiling portion of a vacuum-evacuable processing container into the processing container.
  • a thin film is deposited on the surface of a semiconductor wafer or the like heated in the processing vessel (Japanese Patent Laid-Open No. 10-321613).
  • an unnecessary thin film having a diameter centering on the source gas injection port is formed on the gas injection surface of the shower head facing the inside of the processing container.
  • the deposits were several mm to several cm in size. Unnecessary thin film adhered to the gas injection surface in this way will peel off if left untreated, causing particles, The cleaning process that removes this must be performed at a high frequency. In this case, there is not much problem if a so-called dry cleaning process for removing an unnecessary thin film by flowing a cleaning gas without removing the shower head can be performed.
  • An object of the present invention is to provide a shower head capable of preventing an unnecessary thin film from being deposited near a source gas injection port on a gas injection surface and a film forming apparatus using the same.
  • the present invention provides a method for supplying a raw material gas and a supporting gas into a vacuum atmosphere in a processing container in order to deposit a thin film on the surface of an object to be processed in the processing container.
  • a shower head body having a gas injection surface facing the inside of the processing container; a first diffusion chamber formed in the shower head body to receive and diffuse the source gas; A second diffusion chamber formed in the shower head main body for receiving and diffusing the support gas, and a plurality of source gas injection ports formed on the gas injection surface in communication with the first diffusion chamber; A plurality of first support gas injection ports formed on the gas injection surface in communication with the second diffusion chamber, each of the first support gas injection ports being adjacent to the source gas injection port. Formed in a ring shape It is intended to provide a shower head characterized by.
  • the present invention relates to a shower head for supplying a raw material gas and a supporting gas into a vacuum atmosphere in the processing container in order to deposit a thin film on the surface of the processing object in the processing container,
  • a shower head body having a gas injection surface facing the processing vessel; a first diffusion chamber formed in the shower head body for receiving and diffusing the source gas; formed in the shower head body; Second to receive and diffuse the support gas
  • a first support gas injection port wherein each raw material gas injection port is surrounded by a plurality of the first support gas injection ports in close proximity to each other. Things.
  • the raw material gas immediately after being injected into the processing vessel from the raw material gas injection port is temporarily surrounded by the support gas injected from the first support gas injection port. It flows downward in the inserted state.
  • the activated raw material gas does not stay near the raw material gas injection port. Therefore, it is possible to prevent an unnecessary film from being deposited on the gas injection surface centered on the source gas injection port. Therefore, the frequency of the cleaning process can be reduced by lengthening the interval of the cleaning process, and the operating rate of the apparatus can be improved accordingly.
  • the shower head further includes a plurality of second support gas injection ports formed on the gas injection surface in communication with the second diffusion chamber. It is preferable to be arranged between two adjacent source gas injection ports, respectively.
  • the source gas is a gas containing a high melting point metal, particularly an organometallic material gas containing a high melting point metal.
  • the present invention provides a film forming apparatus for depositing a thin film on a surface of a processing object, a processing container, an exhaust unit for evacuating the processing container, and a processing device provided in the processing container.
  • a film forming apparatus comprising: a mounting table on which the body is mounted; a heating unit configured to heat the object to be processed on the mounting table; and the shower head provided on a ceiling of the processing container. Is provided.
  • FIG. 1 is a sectional configuration diagram showing a film forming apparatus according to a first embodiment of the present invention.
  • FIG. 2 is a plan view showing a part of a gas ejection surface of the shower head shown in FIG.
  • FIG. 3 is a sectional view taken along line A1-A1 in FIG.
  • FIG. 4 is a view showing a part of an assembly process of the shower head shown in FIG. 3.
  • FIG. 5 is a graph showing the relationship between the distance of the central force of the gas injection port and the film formation rate on the showerhead surface.
  • FIG. 6 is a plan view showing a part of a gas ejection surface of a shower head according to a second embodiment of the present invention.
  • FIG. 7 is a sectional view taken along line A2-A2 in FIG.
  • the film forming apparatus 2 shown in FIG. 1 has a cylindrical processing container 4 made of, for example, aluminum.
  • a shower head 6 for introducing a source gas for film formation and a supporting gas is provided at a ceiling portion in the processing container 4.
  • the shower head 6 is configured to inject gas from a number of gas injection ports 10 provided on the gas injection surface 8 toward the processing space S in the processing container 4. Details of the shower head 6 will be described later.
  • a loading / unloading port 12 for loading / unloading a semiconductor wafer / W as an object to be processed into / from the processing container 4 is provided on a side wall of the processing container 4.
  • the carry-in / out port 12 is provided with a gate valve 14 which can be opened and closed in an airtight manner.
  • An exhaust chamber 18 is formed below the processing container 4.
  • the exhaust chamber 18 is defined by a cylindrical side wall 22 and a bottom wall 24 and communicates with the inside of the processing container 4 via an opening 20 formed in the center of the bottom 16 of the processing container 4.
  • a cylindrical support 26 made of quartz glass or the like also has a force on the bottom wall 24 extending upward into the processing vessel 4.
  • a mounting table 28 is fixed to the upper end of the support 26 by welding. Note that the support 26 and the mounting table 28 may be formed of ceramic such as A1N.
  • the opening 20 of the processing container bottom 16 is formed to have a smaller diameter than the mounting table 28.
  • the processing gas force flowing down the outer periphery of the mounting table 28 is wrapped under the mounting table 28 and flows into the opening 20.
  • An exhaust port 30 to which an exhaust pipe 34 of a vacuum exhaust system 32 is connected is formed below the side wall 22.
  • the evacuation system 32 is connected to the exhaust pipe 34 Don't show it! ⁇
  • a vacuum pump is provided so that the atmosphere in the processing vessel 4 and the exhaust chamber 18 can be evacuated through the exhaust pipe 34.
  • the vacuum evacuation system 32 has a pressure adjusting valve (not shown) provided in the middle of the exhaust pipe 34, and by adjusting the opening of the valve, the pressure in the processing chamber 4 is kept at a constant value. It can be maintained or quickly changed to the desired pressure.
  • a resistance heater (heating means) 36 such as a carbon wire is embedded.
  • the heater 36 can heat the semiconductor nano (object) W mounted on the upper surface of the mounting table 28. It is possible to supply controlled electric power to the heater 36 through a power supply line 38 disposed in the support 26! / ⁇ .
  • the mounting table 28 is formed with a plurality of (for example, three) pin through holes 40 penetrating vertically (only two are shown in FIG. 1).
  • a push-up pin 42 is inserted into each pin through-hole 40 so as to be vertically movable.
  • the lower end of each push-up pin 42 is supported in a non-fixed state by a push-up ring 44 made of a ceramic such as alumina.
  • the arm portion 46 extending from the push-up ring 44 is connected to an infestation port 48 provided through the container bottom 16.
  • the retractable rod 48 can be moved up and down by an actuator 50.
  • each push-up pin 42 is made to protrude and retract from the pin ⁇ through hole 40.
  • An extendable bellows 52 is interposed so that the retractable rod 48 can move up and down while maintaining the airtightness in the processing container 4.
  • the showerhead 6 has a bottomed cylindrical showerhead body 56 joined to the lower surface of a ceiling plate 54 closing the upper end of the processing container 4.
  • a seal member 58 such as an O-ring is provided between the peripheral portion of the ceiling plate 54 and the upper end of the processing container 4 to maintain airtightness in the processing container 4.
  • the shower head 6 is made of, for example, nickel, nickel alloy such as Hastelloy (registered trademark), aluminum, or aluminum alloy.
  • a first diffusion chamber 60 for receiving and diffusing the source gas and a second diffusion chamber 62 for receiving and diffusing the supporting gas are formed separately from each other.
  • the partition plate 64 horizontally arranged in the shower head body 56
  • the first diffusion chamber 60 and the second diffusion chamber 62 are formed so as to be vertically separated from each other.
  • the first diffusion chamber 60 communicates with a source gas inlet 66A provided in the ceiling plate 54 for introducing a source gas.
  • the second diffusion chamber 62 communicates with a support gas inlet 66B provided in the ceiling plate 54 for introducing a support gas.
  • a plurality of gas injection ports 10 are arranged in a grid on the gas injection surface 8 which is the lower surface of the shower head main body 56 as shown in FIG. More specifically, the gas injection port 10 includes a source gas injection port 10A for injecting the source gas, and first and second support gas injection ports 10B and 10C for injecting the support gas. .
  • Each of the first support gas injection ports 10B is formed in a ring shape that closely surrounds the source gas injection port 10A.
  • each second support gas injection port 10C is disposed at an intermediate position between two adjacent source gas injection ports 10A (and first support gas injection ports 10B). In addition, if the supply amount of the support gas from the first support gas injection port 10B is sufficient, or if the installation density of the source gas injection port 10A is higher than a certain level, the second support gas injection port 10C is provided. It is not necessary.
  • the raw material gas injection port 10A is communicated with the first diffusion chamber 60 via a gas flow path 68A formed in a nozzle 68 extending downward from the partition plate 64. ing. The tip of the nozzle 68 is reduced in diameter in the form of a step. Further, the first support gas injection port 10B is communicated with the second diffusion chamber 62 via a gas flow path 72 penetrating the bottom plate 70 of the shear head body 56.
  • a stepped opening 74 slightly larger than the tip of the nozzle 68 is formed in the bottom plate 70 in advance corresponding to each nozzle 68. Then, the partition plate 64 and the bottom 70 may be joined and fixed so that the tip of the nozzle 68 corresponding to each of the openings 74 fits in a non-contact state.
  • the second support gas injection port 10C is communicated with the second diffusion chamber 62 via a gas flow path 76 penetrating the bottom plate 70.
  • the number of source gas injection ports 10A is about 300 to 400.
  • the dimensions of each gas injection port 10 are as follows: the inner diameter L1 of the raw material gas injection port 1OA (Fig. 3) is about lmm, the inner diameter L2 of the first support gas injection port 10B (Fig. 3) is about 2mm, and the outer diameter L3 (Fig. 2 and Fig. 3) are about 2.4 mm.
  • the inner diameter L4 of the second support gas injection port 10C (Fig. 3) is about 0.5mm.
  • a source gas and a supporting gas are used as the processing gas. Then, using an organic metal material gas containing Hf (hafnium) as a raw material gas and O gas as a supporting gas,
  • a solvent for example, octane
  • an unprocessed semiconductor wafer W is loaded into the processing container 4 by the transfer arm (not shown) through the loading / unloading port 12 with the gate valve 14 opened, and delivered to the raised push-up pins 42. Thereafter, the wafer W is mounted on the upper surface of the mounting table 28 by lowering the push-up pins 42.
  • the organometallic material gas is decomposed in a relatively short time when introduced into the processing space S where the activity is extremely high.
  • the organometallic material itself contains oxygen atoms. From these facts, mainly the contained oxygen atoms and Hf atoms are combined, and the HfO film is deposited on the surfaces of the Ueno and W by CVD (Chemical Vapor Deposition). Also support
  • the gas, o-gas will support such a reaction.
  • the raw material gas injection port and the support gas injection port are provided at a distance of more than ten mm from each other. Therefore, the organic metal material gas activated by the thermal decomposition stays for a certain period of time immediately below the gas injection surface near the source gas injection port. For this reason, as described above, a phenomenon has occurred in which an unnecessary adhesion film (HfO) is deposited on the gas injection surface centered on the source gas injection port.
  • HfO unnecessary adhesion film
  • the first support gas injection port 10B is provided so as to surround the source gas injection port 1OA. For this reason, the raw material gas injection port The Hf-containing organometallic material gas released downward from 10A is temporarily surrounded by the O gas released downward from the first support gas injection port 10B,
  • a second support gas injection port 10C for injecting a support gas is provided between adjacent source gas injection ports 10A, and the second support gas injection port 10C is provided with a second support gas injection port 10C. Also injected O gas as support gas. According to this, an unnecessary adhesion film (
  • the number of the source gas injection ports 10 A is about 340, and the total area is about 267 mm 2 .
  • the total area of the first support gas injection port 10B is about 2 470 mm.
  • the number of the second support gas injection port 10C is about 340 pieces, and the total area is about 70 mm 2 .
  • the gap of the processing space S (the distance between the gas injection surface 8 and the upper surface of the mounting table 28) is about 40 mm.
  • the distance between adjacent raw material gas injection ports 10A is about 17 mm.
  • the flow rate of the source gas is about 1500 sccm
  • the flow rate of oxygen is about 1500 sccm
  • the process pressure is about 40 Pa
  • the process temperature is about 500 ° C.
  • the gas flow rate of O which is the supporting gas
  • FIG. 5 is a graph showing the relationship between the distance from the center of the gas injection port on the gas injection surface of the shower head and the deposition rate.
  • the distance Omm on the horizontal axis indicates the center position of one source gas injection port 10A.
  • the vertical axis indicates an arbitrary unit (arb. Unit arbitrary unit).
  • the flow rate of O gas is 0-1500sc
  • the supply amount of the O gas is set to 500 sccm.
  • each ring-shaped first support gas injection port 10B instead of each ring-shaped first support gas injection port 10B, a plurality of circular first support gas injection nozzles surrounding the source gas injection ports 10A in close proximity to each other. It is designed to form an outlet 10D.
  • first support gas injection ports 10D are arranged at 90 ° intervals around source gas injection port 10A for each source gas injection port 10A. . Then, one injection port unit 80 is formed by combining one source gas injection port 10A and four first support gas injection ports 10D.
  • the number of first support gas injection ports 10D for each source gas injection port 10A is not limited to four.However, to surround the source gas injected from source gas injection port 10A with support gas, two or more Are preferably provided at equal intervals.
  • the inner diameter L5 (Fig. 7) of the first support gas injection port 10D is about 0.5 mm
  • the distance between the two first support gas injection ports 10D that face each other across the source gas injection port 10A (external method) L6 (Fig. 7) is about 5.5mm.
  • the force of providing the second support gas injection port 1 OC at the intermediate position between the adjacent injection port units 80 can be omitted as in the case of the first embodiment described above.
  • the source gas injected from the source gas injection port 10A is surrounded by the support gas injected from the plurality of first support gas injection ports 10D.
  • the support gas injected from the plurality of first support gas injection ports 10D it is possible to prevent an unnecessary adhesion film from being deposited on the gas injection surface 8. You can do it.
  • the O gas was used as the support gas, but the present invention is not limited to this.
  • An inert gas such as 22 gas, He gas, or Ar gas may be used.
  • the raw material gas is, for example, an organic metal material gas containing W (tungsten), Ti (titanium), Ta (tantalum) or the like, which is a high melting point metal other than Hf, or ⁇ an organic metal containing no high melting point metal It may be a material gas, or a gas other than the organometallic material gas.
  • the force described in the case of using the resistance heater as the heating means of the film forming apparatus is used as an example.
  • a heating lamp may be used instead.
  • a semiconductor wafer has been described as an example of an object to be processed, the present invention is not limited to this, and can be applied to an LCD substrate, a glass substrate, and the like.

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
PCT/JP2004/015716 2003-10-23 2004-10-22 シャワーヘッド及びこれを用いた成膜装置 Ceased WO2005041285A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US10/574,531 US7931749B2 (en) 2003-10-23 2004-10-22 Shower head and film-forming device using the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003363448A JP4306403B2 (ja) 2003-10-23 2003-10-23 シャワーヘッド構造及びこれを用いた成膜装置
JP2003-363448 2003-10-23

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US (1) US7931749B2 (enExample)
JP (1) JP4306403B2 (enExample)
KR (1) KR100728401B1 (enExample)
CN (1) CN100517598C (enExample)
WO (1) WO2005041285A1 (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006322074A (ja) * 2005-05-19 2006-11-30 Piezonics Co Ltd シャワーヘッドを用いた化学気相蒸着方法及びその装置
WO2008032910A1 (en) * 2006-09-16 2008-03-20 Piezonics Co. Ltd. Apparatus of chemical vapor deposition with a showerhead regulating injection velocity of reactive gases positively and method thereof
US20090061646A1 (en) * 2007-09-05 2009-03-05 Chiang Tony P Vapor based combinatorial processing
US20090169744A1 (en) * 2006-09-16 2009-07-02 Piezonics Co., Ltd Apparatus of chemical vapor deposition with a showerhead regulating injection velocity of reactive gases postively and method thereof
US20090178615A1 (en) * 2008-01-15 2009-07-16 Samsung Electro-Mechanics Co., Ltd. Showerhead and chemical vapor deposition apparatus having the same

Families Citing this family (81)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4306403B2 (ja) * 2003-10-23 2009-08-05 東京エレクトロン株式会社 シャワーヘッド構造及びこれを用いた成膜装置
JP4451684B2 (ja) 2004-03-17 2010-04-14 キヤノンアネルバ株式会社 真空処理装置
KR101153161B1 (ko) * 2005-04-01 2012-06-18 주성엔지니어링(주) 가스분사장치 및 이를 포함하는 액정표시소자의 제조장치
DE102005055468A1 (de) * 2005-11-22 2007-05-24 Aixtron Ag Verfahren zum Abscheiden von Schichten in einem CVD-Reaktor sowie Gaseinlassorgan für einen CVD-Reaktor
KR100646017B1 (ko) 2006-01-19 2006-11-15 주식회사 아토 가스 분리형의 다수의 공동 전극을 이용한 샤워헤드
JP4879693B2 (ja) * 2006-10-02 2012-02-22 シャープ株式会社 Ｍｏｃｖｄ装置およびｍｏｃｖｄ法
JP5059371B2 (ja) * 2006-10-18 2012-10-24 東京エレクトロン株式会社 気化器および成膜装置
CN101657565A (zh) 2007-04-17 2010-02-24 株式会社爱发科 成膜装置
US7976631B2 (en) 2007-10-16 2011-07-12 Applied Materials, Inc. Multi-gas straight channel showerhead
US8668775B2 (en) * 2007-10-31 2014-03-11 Toshiba Techno Center Inc. Machine CVD shower head
KR101173645B1 (ko) 2007-12-31 2012-08-20 (주)에이디에스 가스 분사 유닛 및 이를 구비하는 박막 증착 장치
KR101004927B1 (ko) * 2008-04-24 2010-12-29 삼성엘이디 주식회사 Ｃｖｄ용 샤워 헤드 및 이를 구비하는 화학 기상 증착 장치
CN100568453C (zh) * 2008-08-22 2009-12-09 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体处理设备、气体分配装置以及气体输送方法
EP2359392A2 (en) * 2008-10-10 2011-08-24 Alta Devices, Inc. Concentric showerhead for vapor deposition
KR101064210B1 (ko) * 2009-06-01 2011-09-14 한국생산기술연구원 막증착 진공장비용 샤워헤드
KR101110080B1 (ko) * 2009-07-08 2012-03-13 주식회사 유진테크 확산판을 선택적으로 삽입설치하는 기판처리방법
DE102009043840A1 (de) * 2009-08-24 2011-03-03 Aixtron Ag CVD-Reaktor mit streifenförmig verlaufenden Gaseintrittszonen sowie Verfahren zum Abscheiden einer Schicht auf einem Substrat in einem derartigen CVD-Reaktor
TWI385272B (zh) * 2009-09-25 2013-02-11 Ind Tech Res Inst 氣體分佈板及其裝置
WO2011044451A2 (en) * 2009-10-09 2011-04-14 Applied Materials, Inc. Multi-gas centrally cooled showerhead design
US20120052216A1 (en) * 2010-08-27 2012-03-01 Applied Materials, Inc. Gas distribution showerhead with high emissivity surface
JP5524152B2 (ja) * 2010-12-06 2014-06-18 株式会社東芝 基板処理装置、及び成膜システム
DE102011056589A1 (de) * 2011-07-12 2013-01-17 Aixtron Se Gaseinlassorgan eines CVD-Reaktors
KR20140038070A (ko) * 2012-09-20 2014-03-28 삼성코닝정밀소재 주식회사 가스 분사 장치 및 이에 사용되는 인젝터 파이프
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US10316409B2 (en) 2012-12-21 2019-06-11 Novellus Systems, Inc. Radical source design for remote plasma atomic layer deposition
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
JP6199619B2 (ja) * 2013-06-13 2017-09-20 株式会社ニューフレアテクノロジー 気相成長装置
CN103320852A (zh) * 2013-06-14 2013-09-25 光垒光电科技（上海）有限公司 用于外延沉积的反应腔
JP6153401B2 (ja) * 2013-07-02 2017-06-28 株式会社ニューフレアテクノロジー 気相成長装置および気相成長方法
US9677176B2 (en) * 2013-07-03 2017-06-13 Novellus Systems, Inc. Multi-plenum, dual-temperature showerhead
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US10023959B2 (en) 2015-05-26 2018-07-17 Lam Research Corporation Anti-transient showerhead
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10546729B2 (en) * 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US10604841B2 (en) 2016-12-14 2020-03-31 Lam Research Corporation Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
JP7176860B6 (ja) 2017-05-17 2022-12-16 アプライド マテリアルズ インコーポレイテッド 前駆体の流れを改善する半導体処理チャンバ
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10712005B2 (en) 2017-07-14 2020-07-14 Goodrich Corporation Ceramic matrix composite manufacturing
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10480065B2 (en) * 2017-09-19 2019-11-19 Goodrich Corporation Gas distribution for chemical vapor deposition/infiltration
US11015247B2 (en) 2017-12-08 2021-05-25 Lam Research Corporation Integrated showerhead with improved hole pattern for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US11222771B2 (en) * 2018-02-05 2022-01-11 Applied Materials, Inc. Chemical control features in wafer process equipment
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US11189502B2 (en) * 2018-04-08 2021-11-30 Applied Materials, Inc. Showerhead with interlaced gas feed and removal and methods of use
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10943768B2 (en) * 2018-04-20 2021-03-09 Applied Materials, Inc. Modular high-frequency source with integrated gas distribution
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US20200087788A1 (en) * 2018-09-17 2020-03-19 Applied Materials, Inc. Multiple channel showerheads
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
KR102856220B1 (ko) * 2020-01-31 2025-09-09 주성엔지니어링(주) 기판처리장치 및 기판처리방법
TW202147492A (zh) * 2020-06-03 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 噴淋板、基板處理裝置、基板處理方法
US12282256B2 (en) * 2020-11-17 2025-04-22 Applied Materials, Inc. Photoresist deposition using independent multichannel showerhead
DE102021114868A1 (de) 2021-06-09 2022-12-15 Aixtron Se Gaseinlassorgan für einen CVD-Reaktor
CN115537765B (zh) * 2022-09-27 2024-07-12 盛吉盛(宁波)半导体科技有限公司 等离子体化学气相沉积装置和小尺寸沟槽填充方法
CN118653135B (zh) * 2024-08-20 2025-05-27 新美光(苏州)半导体科技有限公司 一种化学气相沉积设备的进气结构及化学气相沉积设备

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5737821A (en) * 1980-08-20 1982-03-02 Kokusai Electric Co Ltd Vapor phase reaction device
JPH03122281A (ja) * 1989-10-06 1991-05-24 Anelva Corp Ｃｖｄ装置
JP2000144432A (ja) * 1998-11-04 2000-05-26 Ebara Corp ガス噴射ヘッド

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL147412B (nl) * 1964-12-15 1975-10-15 Mobil Oil Corp Werkwijze voor het zuiveren van tereftaalzuur door sublimatie.
US5031571A (en) * 1988-02-01 1991-07-16 Mitsui Toatsu Chemicals, Inc. Apparatus for forming a thin film on a substrate
KR950020993A (ko) * 1993-12-22 1995-07-26 김광호 반도체 제조장치
JP3360098B2 (ja) * 1995-04-20 2002-12-24 東京エレクトロン株式会社 処理装置のシャワーヘッド構造
JP3403550B2 (ja) * 1995-06-29 2003-05-06 松下電器産業株式会社 スパッタリング装置とスパッタリング方法
US6070551A (en) 1996-05-13 2000-06-06 Applied Materials, Inc. Deposition chamber and method for depositing low dielectric constant films
JP3027968B2 (ja) * 1998-01-29 2000-04-04 日新電機株式会社 成膜装置
US6126753A (en) * 1998-05-13 2000-10-03 Tokyo Electron Limited Single-substrate-processing CVD apparatus and method
US6086677A (en) * 1998-06-16 2000-07-11 Applied Materials, Inc. Dual gas faceplate for a showerhead in a semiconductor wafer processing system
US6302964B1 (en) * 1998-06-16 2001-10-16 Applied Materials, Inc. One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system
US6148761A (en) * 1998-06-16 2000-11-21 Applied Materials, Inc. Dual channel gas distribution plate
JP4487338B2 (ja) * 1999-08-31 2010-06-23 東京エレクトロン株式会社 成膜処理装置及び成膜処理方法
JP3366301B2 (ja) * 1999-11-10 2003-01-14 日本電気株式会社 プラズマｃｖｄ装置
JPWO2002048427A1 (ja) * 2000-12-12 2004-04-15 東京エレクトロン株式会社 薄膜の形成方法及び薄膜の形成装置
DE60231601D1 (de) * 2001-01-22 2009-04-30 Tokio Electron Ltd Einrichtung und verfahren zur behandlung
KR100427996B1 (ko) * 2001-07-19 2004-04-28 주식회사 아이피에스 박막증착용 반응용기 및 그를 이용한 박막증착방법
JP4074461B2 (ja) * 2002-02-06 2008-04-09 東京エレクトロン株式会社 成膜方法および成膜装置、半導体装置の製造方法
US6884296B2 (en) * 2002-08-23 2005-04-26 Micron Technology, Inc. Reactors having gas distributors and methods for depositing materials onto micro-device workpieces
JP3991315B2 (ja) * 2002-09-17 2007-10-17 キヤノンアネルバ株式会社 薄膜形成装置及び方法
JP3574651B2 (ja) * 2002-12-05 2004-10-06 東京エレクトロン株式会社 成膜方法および成膜装置
KR100509231B1 (ko) * 2003-01-03 2005-08-22 주식회사 아이피에스 박막증착용 반응용기
DE10320597A1 (de) * 2003-04-30 2004-12-02 Aixtron Ag Verfahren und Vorrichtung zum Abscheiden von Halbleiterschichten mit zwei Prozessgasen, von denen das eine vorkonditioniert ist
JP4306403B2 (ja) * 2003-10-23 2009-08-05 東京エレクトロン株式会社 シャワーヘッド構造及びこれを用いた成膜装置
KR100513920B1 (ko) * 2003-10-31 2005-09-08 주식회사 시스넥스 화학기상증착 반응기
KR100591762B1 (ko) * 2004-01-19 2006-06-22 삼성전자주식회사 증착 장치 및 증착 방법
US7273526B2 (en) * 2004-04-15 2007-09-25 Asm Japan K.K. Thin-film deposition apparatus
US20060021703A1 (en) * 2004-07-29 2006-02-02 Applied Materials, Inc. Dual gas faceplate for a showerhead in a semiconductor wafer processing system

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5737821A (en) * 1980-08-20 1982-03-02 Kokusai Electric Co Ltd Vapor phase reaction device
JPH03122281A (ja) * 1989-10-06 1991-05-24 Anelva Corp Ｃｖｄ装置
JP2000144432A (ja) * 1998-11-04 2000-05-26 Ebara Corp ガス噴射ヘッド

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006322074A (ja) * 2005-05-19 2006-11-30 Piezonics Co Ltd シャワーヘッドを用いた化学気相蒸着方法及びその装置
US8298370B2 (en) 2005-05-19 2012-10-30 Piezonics Co., Ltd. Apparatus for chemical vapor deposition (CVD) with showerhead
WO2008032910A1 (en) * 2006-09-16 2008-03-20 Piezonics Co. Ltd. Apparatus of chemical vapor deposition with a showerhead regulating injection velocity of reactive gases positively and method thereof
US20090169744A1 (en) * 2006-09-16 2009-07-02 Piezonics Co., Ltd Apparatus of chemical vapor deposition with a showerhead regulating injection velocity of reactive gases postively and method thereof
JP2010503768A (ja) * 2006-09-16 2010-02-04 ピエゾニックス カンパニー リミテッド 反応気体の噴射速度を積極的に調節するシャワーヘッドを備えた化学気相蒸着装置およびその方法
CN101517704B (zh) * 2006-09-16 2013-04-17 韩国生产技术研究院 使用主动调节反应性气体的注入速度的喷头的化学气相沉积设备及其方法
JP2013174023A (ja) * 2006-09-16 2013-09-05 Piezonics Co Ltd 反応気体の噴射速度を積極的に調節するシャワーヘッドを備えた化学気相蒸着装置およびその方法
US8882913B2 (en) 2006-09-16 2014-11-11 Piezonics Co., Ltd Apparatus of chemical vapor deposition with a showerhead regulating injection velocity of reactive gases positively and method thereof
US9469900B2 (en) 2006-09-16 2016-10-18 PIEZONICS Co., Ltd.; Korea Institute of Industrial Technology Apparatus of chemical vapor deposition with a showerhead regulating injection velocity of reactive gases positively and method thereof
US9476121B2 (en) 2006-09-16 2016-10-25 Piezonics Co., Ltd. Apparatus of chemical vapor deposition with a showerhead regulating injection velocity of reactive gases positively and method thereof
US20090061646A1 (en) * 2007-09-05 2009-03-05 Chiang Tony P Vapor based combinatorial processing
US20090178615A1 (en) * 2008-01-15 2009-07-16 Samsung Electro-Mechanics Co., Ltd. Showerhead and chemical vapor deposition apparatus having the same

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