WO2005015647A1 - Micro-diode electroluminescente au nitrure a haute brillance et son procede de fabrication - Google Patents

Micro-diode electroluminescente au nitrure a haute brillance et son procede de fabrication Download PDF

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Publication number
WO2005015647A1
WO2005015647A1 PCT/KR2003/001600 KR0301600W WO2005015647A1 WO 2005015647 A1 WO2005015647 A1 WO 2005015647A1 KR 0301600 W KR0301600 W KR 0301600W WO 2005015647 A1 WO2005015647 A1 WO 2005015647A1
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Prior art keywords
pillars
high brightness
luminous
type gan
micro led
Prior art date
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PCT/KR2003/001600
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English (en)
Inventor
Sang-Kyu Kang
Original Assignee
Vichel Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vichel Inc. filed Critical Vichel Inc.
Priority to AU2003257713A priority Critical patent/AU2003257713A1/en
Priority to JP2005507595A priority patent/JP4755901B2/ja
Priority to EP03818003A priority patent/EP1652238B1/fr
Priority to AT03818003T priority patent/ATE486374T1/de
Priority to CNB038268892A priority patent/CN100459180C/zh
Priority to DE60334745T priority patent/DE60334745D1/de
Priority to PCT/KR2003/001600 priority patent/WO2005015647A1/fr
Priority to US10/567,482 priority patent/US7595511B2/en
Priority to ES03818003T priority patent/ES2356606T3/es
Publication of WO2005015647A1 publication Critical patent/WO2005015647A1/fr
Priority to US12/545,795 priority patent/US7906787B2/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

Definitions

  • the present invention relates to a nitride micro light emitting diode (LED) with high brightness and a method of manufacturing the same, and specifically to a nitride micro light emitting diode (LED) with high brightness and a method of manufacturing the same, in which luminous efficiency is maximized by finely adjusting micro-sized nitride luminous elements and allowing an array of the elements to be driven at the same time.
  • LED nitride micro light emitting diode
  • a nitride semiconductor LED is widely studied. Specifically, in order to use the nitride LED for illumination as well as for display, the brightness limit of the commercialized LED should be overcome.
  • the nitride LED generally emits light in an element area having a diameter of 300 ⁇ m or more. The light emitted from a luminous layer may not get out of the element and be locked in the element, so that the nitride LED has a limit that its external luminous efficiency does not exceed 30%.
  • the internal luminous efficiency and the external luminous efficiency should be optimized, respectively.
  • Fig. 1 is a view illustrating a micro light emitting diode (LED) according to one embodiment of the present invention
  • Figs. 2 A to 2E are views illustrating a method of manufacturirig the micro LED shown in Fig. 1
  • Figs. 3 and 4 are views illustrating modifications of the micro LED according to one embodiment of the present invention
  • Fig. 5 is a view illustrating another modification of the micro LED according to one embodiment of the present invention
  • Figs. 6 A to 6D are views illustrating a method of manufacturing the micro LED using a selective re-growth method in place of a dry etching method in manufacturing the micro LED shown in Fig. 1.
  • the present invention is contrived to provided a nitride micro LED with high brightness improved using a nitride semiconductor having a previously-optimized and grown-into-thin-film structure. Therefore, it is an object of the present invention to provide a nitride micro LED with high brightness and a method of manufacturing the same, in which a luminous area is increased as large as possible to allow light emitted from an active layer to get out of an element, by controlling luminous elements in a micro size. It is another object of the present invention to provide a nitride micro LED with high brightness which consumes the same power as the conventional large-area LED and of which the luminous efficiency is more excellent, and a method for manufacturing the same.
  • a nitride micro LED with high brightness consuming the same power as the conventional large area LED but having more excellent luminous efficiency, and a method of manufacturing the same.
  • the present invention provides a nitride micro LED (Light Emitting Diode) with high brightness having a plurality of luminous pillars, the LED comprising: a plurality of micro-sized luminous pillars having an n-type GaN layer formed on a substrate, an active layer formed on the n-type GaN layer, and a p-type GaN layer formed on the active layer; a gap filling material filled between the luminous pillars to have substantially the same height as the luminous pillars; a p-type transparent electrode formed on a top surface of the gap filling material and the luminous pillars; a p-type electrode formed on the p-type transparent electrode; and an n-type electrode electrically connected to the a nitride micro LED (Light Emitting Diode) with high brightness having a pluralit
  • the gap filling material includes at least one selected from SiO 2 , Si N or a combination thereof, polyamide, and ZrO 2 /SiO 2 or HfO 2 /SiO 2 .
  • the gap filling material is formed to have substantially the same height as the luminous pillars through a CMP (Chemical Mechanical Polishing) process.
  • a top surface of the p-type GaN layer of the luminous pillars may have convex surfaces formed through the CMP process. In this case, the convex surfaces serve as lenses.
  • the transparent electrode comprises a combination of oxidized Ni/Au(NiO/Au) or an ITO (Indium Tin Oxide).
  • the nitride micro LED further comprises a pair of DBR (Distributed Bragg Reflectors) layers formed on a top surface of the transparent electrode and a bottom surface of the substrate, respectively.
  • the nitride micro LED may further comprise an AR (Anti- reflection) layer coated on a top surface of the transparent electrode or a bottom surface of the substrate.
  • the luminous pillars may have side surfaces formed obliquely.
  • the nitride micro LED further comprises a DBR layer made of ZrO 2 /SiO 2 or HfO 2 /SiO 2 and formed below the gap filling material within gaps between the luminous pillars.
  • the present invention provides a nitride micro LED with high brightness which is mounted through a flip-chip method, the nitride micro LED comprising: a sapphire substrate; a plurality of micro-sized luminous pillars having an n- type GaN layer grown on the sapphire substrate, an active layer formed on the n-type GaN layer and a p-type GaN layer formed on the active layer; a gap filling material filled between the luminous pillars to have substantially the same height as the luminous pillars; a metal electrode formed on a top surface of the gap filling material and the luminous pillars; a p-type electrode formed on the metal electrode; and an n-type electrode electrically connected to the n-type GaN layer, wherein an array of the luminous pillars is driven at the same time.
  • the present invention provides a method of manufacturing a nitride micro LED with high brightness having a plurality of micro luminous pillars, the method comprising: (a) a step of sequentially growing an n-type GaN layer, an active layer, and a p-type GaN layer on a wafer or substrate; (b) a step of dry-etching the processed wafer to form the luminous pillars having the n-type GaN layer, the active layer and the p-type GaN layer on the substrate; (c) a step of depositing a gap filling material in gaps between the luminous pillars; (d) a step of planarizing a top surface of an array of luminous pillars and a top surface of the gap filling material using a CMP process; and (e) a step of depositing a transparent electrode on all of the top surfaces of the array of luminous pillars and the gap filling material, depositing a p-type electrode and an n-type electrode at predetermined positions, respectively
  • the step (c) is carried out such that the gaps between the luminous pillars are completely filled with the gap filling material, and the step (d) is carried out such that the top surface of the luminous pillars and the top surface of the gap filling material have the same height as each other.
  • the step (c) may be carried out such that the gaps between the luminous pillars are completely filled with the gap filling material, and the step (d) may be carried out such that the top surface of the p-type GaN layer in the luminous pillars is formed to have convex surfaces.
  • the gap filling material includes at least one selected from SiO 2 , Si N 4 or a combination thereof, polyamide, and ZrO 2 /SiO 2 or HfO 2 /SiO 2 .
  • the transparent electrode comprises a combination of oxidized Ni/Au(NiO/Au) or an ITO (Indium Tin Oxide).
  • the method further comprises, after the step (e), a step of depositing a pair of DBR (Distributed Bragg Reflectors) layers on a top surface of the transparent electrode and a bottom surface of the substrate.
  • DBR Distributed Bragg Reflectors
  • the method further comprises, after the step (e), a step of coating an AR (Anti-reflection) layer on a top surface of the transparent electrode or a bottom surface of the substrate.
  • process variables may be controlled such that side surfaces of the luminous pillars are formed into oblique portions.
  • the method further comprises, between the step (b) and the step (c), a step of depositing a DBR layer within the gaps between the luminous pillars.
  • the present invention provides a method of manufacturing a nitride micro LED with high brightness having a plurality of micro luminous pillars, the method comprising: (a) a step of sequentially growing an n-type GaN layer, an active layer and a p- type GaN layer on a sapphire wafer or substrate; (b) a step of dry-etching the processed wafer to form the luminous pillars having the n-type GaN layer, the active layer and the p- type GaN layer on the substrate; (c) a step of depositing a gap filling material in gaps between the luminous pillars; (d) a step of planarizing a top surface of an array of luminous pillars and a top surface of the gap filling material using a CMP process; and (e) a step of depositing a metal electrode on the overall top surface of the array of luminous pillars, depositing a p-type electrode and an n-type electrode thereon, respectively, and heating the resultant structure
  • the present invention provides a method of manufacturing a nitride micro LED with high brightness having a plurality of micro luminous pillars, the method comprising: (a) a step of growing an n-type GaN buffer layer on a wafer or substrate; (b) a step of depositing an oxide film on the n-type GaN buffer layer; (c) a step of wet-etching and patterning the oxide film such that the oxide film has the plurality of pillars and gaps therebetween; (d) a step of sequentially re-growing an n-type GaN layer, an active layer and a p-type GaN layer up to a height of the oxide film pillars using the n-type GaN buffer layer exposed in a bottom surface of the gaps; and (e) a step of depositing a transparent electrode on the overall top surface of the array of luminous pillars re-grown, depositing a p-type electrode at a predetermined position, depositing an n-type electrode on the n-type
  • the method further comprises, after the step (e), a step of depositing a pair of DBR (Distributed Bragg Reflectors) layers on a top surface of the transparent electrode and a bottom surface of the substrate.
  • the method may further comprises, after the step (e), a step- of coating an AR (Anti-reflection) layer on a top surface of the transparent electrode or a bottom surface of the substrate.
  • the present invention as described above, by filling gaps between the luminous pillars in the nitride micro luminous pillar array with the gap filling material, planarizing the resultant structure using the CMP process, and forming the transparent electrode on the surface thereof, it is possible to maximize the luminous area and thus to externally use the light emitted from the active layer with a high efficiency.
  • by using the nitride micro LED with high brightness having an improved structure it is expected to promote demands of LEDs for display and illumination.
  • the present invention can apply to a method of manufacturing a micro LED for micro display.
  • Fig. 1 is a view illustrating a micro LED according to one embodiment of the present invention
  • Figs. 2A to 2E are views illustrating a method of manufacturing the micro LED shown in Fig. 1.
  • a nitride micro LED with high brightness according to the present invention comprises a substrate 1, a n-type GaN layer 2, an active layer 3, a p-type GaN layer 4, a gap filling material 5, a transparent electrode 6, a p-type electrode 7, an n- type electrode, and a DBR (Distributed Bragg Reflectors) layer 9.
  • the reference numeral 10 in Fig. 1 denotes micro-sized luminous pillars.
  • the n-type GaN layer 2, the InGaN/GaN active layer 3, the p-type GaN layer 4 sequentially grown and disposed on the sapphire (Al 2 O 3 ) substrate 1 grown in a predetermined direction constitutes a plurality of micro-sized luminous pillars or luminous element pillars 10.
  • the luminous element pillars 10 are formed to be a circular cylinder shape in order to maximize the area for emitting light.
  • the luminous element pillars 10 of the present invention may be formed to be a polygonal pillar shape other than the circular cylinder shape.
  • the diameter of the luminous element pillars 10 can be adjusted from 0.5 ⁇ m close to the wavelength of emitted light to several tens ⁇ m.
  • the height of the pillars 10 can be adjusted such that the active layer, the n-type doped layer and the p-type doped layer all are included in the pillars.
  • Such elements are formed using a dry etching method or a selective re-growth method.
  • a manufacturing method using the dry etching method will be first described, and then a manufacturing method using the selective re-growth method will be described in detail in an embodiment with reference to Figs. 6 A to 6D.
  • the gap filling material 5 is a material for filling in the gaps formed between the luminous element pillars 10, and facilitates the formation of electrodes of the respective pillars 10 through the planarization process.
  • Materials usable for the gap filling material include SiO , Si 3 N 4 , a combination of SiO and Si 3 N 4 , polyamide, ZrO 2 /SiO 2 , HfO 2 /SiO 2 and so on.
  • the method such as plasma enhanced chemical vapor deposition (PECVD), evaporation and sputtering is used for depositing the gap filling material.
  • PECVD plasma enhanced chemical vapor deposition
  • evaporation and sputtering is used for depositing the gap filling material.
  • a combination of oxidized Ni/Au(NiO/Au) or ITO (Indium Tin Oxide) is used for the transparent electrode 6.
  • the transparent electrode 6 is formed on a surface of the upper p-type GaN layer 4 of the luminous element pillars 10 and a top surface 11 of the gap filling material 5 to drive all the pillars 10 at the same time with the electrical pumping of the respective luminous element pillars 10.
  • the surface of the upper p-type GaN layer 4 of the luminous element pillars 10 and the top surface 11 of the gap filling material 5 should be planarized through a predetermined process in advance.
  • the p-type electrode 7 and the n-type electrode 8 are made of at least one conductive material selected from gold (Au), aluminum (Al), copper (Cu) or alloys thereof.
  • the DBR layer 9 is formed on the transparent electrode 6 and a back surface of the substrate 1 as a layer having a high reflectivity for formation of the micro LED having a resonant cavity.
  • the micro-sized nitride luminous element of the present invention basically comprises the micro-sized luminous pillars, the gap filling material to be filled in the gaps between the pillars, DBR layers for formation of the resonant cavity LED (RCLED), and electrodes for the electrical pumping.
  • RCLED resonant cavity LED
  • a point most different from the commercialized large-area LED is that the area for emitting light is enhanced by means of an array of micro-sized luminous elements in place of the large area as a plane.
  • a material such as silica is filled between the pillars, a structure having the transparent electrode is efficiently formed through a planarization process. More specifically, a method of manufacturing the nitride micro LED will be described with reference to Figs. 2A to 2E. First, as shown in Fig. 2A, a luminous layer excellent in an internal luminous efficiency is grown using a metal organic chemical vapor deposition (MOCND) method.
  • MOCND metal organic chemical vapor deposition
  • the n-type Ga ⁇ layer 2 is formed on a sapphire wafer or substrate 1 having a predetermined crystal direction, the InGa ⁇ /Ga ⁇ quantum well (QW) active layer 3 is formed thereon, and then the p-type Ga ⁇ layer 4 is formed thereon.
  • the wafer on which the semiconductor luminous element structure is formed like above is dry-etched into pillar shapes as shown in Fig. 2B. This etching is carried out by means of an ICP (Inductive Coupled Plasma) process using a reactive gas such as Cl 2 , BC1 2 or the like.
  • ICP Inductive Coupled Plasma
  • a reactive gas such as Cl 2 , BC1 2 or the like.
  • a shape of the luminous pillars 10 a polygonal shape may be selected in addition to a circular shape expected to be excellent in the luminous efficiency.
  • the height of the luminous pillars 10 is about l ⁇ m more or less such that the QW structure, the n-type GaN layer and the p-type GaN layer are all included in the pillars, and the diameter of the luminous pillars 10 is about 0.4 ⁇ m to several tens ⁇ m for forming photonic crystals.
  • the gap filling material 5 is deposited in the gaps 12 between the luminous pillars 10. At that time, the filling material 5 is generally deposited in the same shape as shown in Fig. 2C.
  • the first deposition thickness of the gap filling material 5 should be at least the height of the luminous pillars 10 or more, and an accurate process selection and an accurate process control are required not to finally form voids in the gap filling layer due to deposition of the gap filling material.
  • the process of depositing the gap filling material 5 employs a high-density plasma enhanced deposition method.
  • the gap filling material 5 SiO 2 , Si N , a combination of SiO 2 and Si 3 N 4 , polyamide, ZrO 2 /SiO 2 , HfO 2 /SiO 2 and so on can be used.
  • the raw materials of the gap filling material 5 can surely provide insulation between the respective luminous pillars 10 and can be thermally stable for the heat treatment in later processes, and in addition the refraction indx thereof is higher than that of air to decrease a fresnel loss of the emitted light.
  • ZrO 2 or HfO 2 / is used for the first layer on side surfaces of the GaN layer, compared with a case of using only SiO2, difference in refraction index from the GaN is further decreased, thereby further decreasing the total reflection and the fresnel loss. As shown in Fig.
  • the deposited gap filling material 5 is subjected to a planarization process for providing the uniform transparent electrode all over the top surface of the array of luminous pillars 10.
  • the planarization process can include various methods, the CMP process is suggested as a most effective method in the present invention. Specifically, in order to make the heights of the luminous pillars 10 and the deposited gap filling material 5 equal to each other, the planarization process is carried out in the present invention.
  • the planarization process is carried out by depositing a thick photo resist (PR) film, and performing a dry etching method in which the oxide film and the PR film are etched at the same speed or the CMP (Chemical Mechanical Polishing) method.
  • PR photo resist
  • the controllability and the reproducibility are excellent.
  • GaN is very stable chemically and mechanically
  • the CMP method of removing the gap filling layer 5 deposited on the top surface of the luminous pillars 10 does not damage the GaN layer. That is, since the array of luminous pillars 10 themselves can be used as the end point layer of planarization, the reproducibility and the reliability of the planarization process can be considerably enhanced.
  • a solution used for the CMP process a general alkaline solution of softening the oxide film is used.
  • a commercialized product of the alkaline solution can be include Syton, in which the softness of oxide film can be controlled by adjusting the acidity (pH) of the alkaline solution.
  • Fine SiO2 or A12O3 can be used as the polishing particles, and in order to decrease difference in height between the top surface of the luminous pillars and the top surface of the gap filling material after finishing the planarization process, finer particles are more advantageous.
  • a hard polishing pad such as a glass is used and force applied to a sample is small.
  • the uppermost layer of the GaN layer (the top surface of the p-type GaN layer) can be processed into a lens shape 11a as shown in Fig. 3.
  • the lens shape 11a shown in Fig. 3 enhances the luminous efficiency and the straightness of light.
  • the transparent electrode 6 is formed.
  • the transparent electrode 6 is formed in a large area on the p-type GaN which is the top surface of the luminous pillars 10 exposed after finishing the planarization process, thereby forming a structure in which the respective luminous pillars are electrically pumped and all the pillars 10 are driven at the same time.
  • a material of the transparent electrode 6 a thin Ni/Au or ITO is used.
  • the p-type electrode 7 ad the n-type electrode 8 is formed and then the resultant structure is heated.
  • the slope of the side surfaces can be controlled.
  • an etching process without an oblique slope and with an excellent verticality can be preferred, but it may be necessary to form an oblique side surface, depending upon the selection of gap filling material. That is, when the DBR material is selected as the gap filling material, the oblique side surface is more advantageous than the vertical side surface from the point of view of process. For example, by forming the side surfaces of the luminous pillars 10 obliquely and filling the gaps therebetween with the gap filling material of DBR material, the shape shown in Fig. 4 can be obtained.
  • the DBR layer 9a is first formed in the internal side surfaces 10a and the bottom portion of the gaps 12 using ZrO 2 /SiO or HfO 2 /SiO 2 , and then the gap filling material comprising other material can be further filled therein. Then, although not shown in Fig. 4, the transparent electrode 6, the p-type electrode 7 and the n-type electrode 8 can be formed as described above. Furthermore, in the present invention, when the luminous element is used to have a flip-chip structure in which the substrate 1 of the semiconductor element is directed upward, a metal electrode 6a which allows the flip-chip mounting may be deposited in place of the transparent electrode.
  • the present invention is not limited to such structure, but may include a flip-chip structure in which light is emitted toward the substrate.
  • the flip-chip structure prevent a local discontinuity of the thin transparent electrode which may be generated due to a fine difference in height of the top surface of the gap filling material (the bottom surface of the gap filling material in Fig. 5) and the luminous pillars 10.
  • the luminous pillars are prevent from not being driven at the same time due to the local discontinuity.
  • the aforementioned problems can be completely solved, thereby obtaining a high light efficiency.
  • the emitted light necessarily passes through the substrate in the flip-chip structure, and thus it is possible to obtain a higher luminous efficiency compared with a structure in which the emitted light is directly discharged in air.
  • an AR (Anti-reflection) layer may be coated, or the DBR layers may be deposited on the top and bottom surfaces of the element, thereby obtain an RCLED (Resonant Cavity LED) structure.
  • the DBR layer having a proper reflectivity can enhance re-cyclability of the emitted light and thus is effective for improving quality of the emitted light.
  • FIG. 6A to 6D are views illustrating a method of manufacturing the micro LED using a selective re-growth method in place of a dry etching method in manufacturing the micro LED in the first embodiment.
  • the second embodiment employs a selective re-growth method, unlike the first embodiment employing the dry etching method for formation of the luminous pillars 10. In this case, the second embodiment does not require the CMP process.
  • a Ga ⁇ buffer layer 2a for re-growing the luminous pillars 10 is grown on the substrate 1, and then the oxide film 5 is deposited thereon in a thickness of the luminous pillars desired to obtain.
  • the oxide film 5 By patterning the oxide film 5 using a wet etching method, the shape shown in Fig.
  • the re- growth is carried out using the exposed Ga ⁇ buffer layer 2a (see Fig. 6C).
  • the n-type Ga ⁇ layer 2, the InGa ⁇ /Ga ⁇ QW active layer 3 and the p-type Ga ⁇ layer 4 are grown on the n-type Ga ⁇ buffer layer 2a (see Fig. 6D).
  • the thickness of the re-grown layer constituting the luminous pillars 10 is equal to that of the oxide film.
  • a pair of DBR layers may be formed on the substrate and the uppermost layer of the completed element to form a resonant cavity LED, or the substrate and the uppermost layer may be coated with the AR layer to further enhance the light efficiency.
  • the micro-sized nitride semiconductor LED is described in the above embodiments, the present invention may easily apply to all types of micro-sized light emitting diodes.

Abstract

L'invention concerne une micro-diode électroluminescente (DEL) au nitrure à haute brillance ainsi qu'un procédé permettant de la fabriquer. Elle concerne une micro DEL au nitrure et un procédé de fabrication de cette micro DEL. Plusieurs colonnes (10) lumineuses de l'ordre du micron sont formées sur un substrat. Un matériau de remplissage d'espaces, tel que SiO2, Si3N4, DBR(ZrO2/SiO2 HfO2/SiO2), polyamide ou analogue est versé dans les espaces entre lesdites colonnes. Une surface supérieure (11) du réseau de colonnes et le matériau de remplissage sont planarisés par un traitement CMP, sur lesquels on forme ensuite une électrode transparente (6) présentant une grande surface. ; Ainsi, toutes les colonnes lumineuses peuvent être entraînées simultanément. De plus, l'invention concerne une micro DEL au nitrure à haute brillance, où l'uniformité au niveau de la formation des électrodes sur le réseau de colonnes lumineuses de l'ordre du micron est renforcée par l'utilisation d'une structure par puce à protubérances.
PCT/KR2003/001600 2003-08-08 2003-08-08 Micro-diode electroluminescente au nitrure a haute brillance et son procede de fabrication WO2005015647A1 (fr)

Priority Applications (10)

Application Number Priority Date Filing Date Title
AU2003257713A AU2003257713A1 (en) 2003-08-08 2003-08-08 Nitride micro light emitting diode with high brightness and method of manufacturing the same
JP2005507595A JP4755901B2 (ja) 2003-08-08 2003-08-08 高輝度の窒化物マイクロ発光ダイオード及びその製造方法
EP03818003A EP1652238B1 (fr) 2003-08-08 2003-08-08 Micro-diode electroluminescente au nitrure a haute brillance et son procede de fabrication
AT03818003T ATE486374T1 (de) 2003-08-08 2003-08-08 Nitrid-mikrolicht-emissionsdiode mit grosser helligkeit und herstellungsverfahren dafür
CNB038268892A CN100459180C (zh) 2003-08-08 2003-08-08 高亮度氮化物微发光二极管及其制造方法
DE60334745T DE60334745D1 (de) 2003-08-08 2003-08-08 Nitrid-mikrolicht-emissionsdiode mit grosser helligkeit und herstellungsverfahren dafür
PCT/KR2003/001600 WO2005015647A1 (fr) 2003-08-08 2003-08-08 Micro-diode electroluminescente au nitrure a haute brillance et son procede de fabrication
US10/567,482 US7595511B2 (en) 2003-08-08 2003-08-08 Nitride micro light emitting diode with high brightness and method of manufacturing the same
ES03818003T ES2356606T3 (es) 2003-08-08 2003-08-08 Microdiodo emisor de luz de nitruro con alto brillo y procedimiento de fabricación del mismo.
US12/545,795 US7906787B2 (en) 2003-08-08 2009-08-21 Nitride micro light emitting diode with high brightness and method for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/KR2003/001600 WO2005015647A1 (fr) 2003-08-08 2003-08-08 Micro-diode electroluminescente au nitrure a haute brillance et son procede de fabrication

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US10/567,482 A-371-Of-International US7595511B2 (en) 2003-08-08 2003-08-08 Nitride micro light emitting diode with high brightness and method of manufacturing the same
US12/545,795 Division US7906787B2 (en) 2003-08-08 2009-08-21 Nitride micro light emitting diode with high brightness and method for manufacturing the same

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US (2) US7595511B2 (fr)
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EP1652238A1 (fr) 2006-05-03
ES2356606T3 (es) 2011-04-11
JP2007519214A (ja) 2007-07-12
US20060208273A1 (en) 2006-09-21
US20090309107A1 (en) 2009-12-17
CN1820376A (zh) 2006-08-16
EP1652238A4 (fr) 2007-03-21
JP4755901B2 (ja) 2011-08-24
EP1652238B1 (fr) 2010-10-27
DE60334745D1 (de) 2010-12-09
US7595511B2 (en) 2009-09-29
CN100459180C (zh) 2009-02-04
US7906787B2 (en) 2011-03-15
AU2003257713A1 (en) 2005-02-25

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