WO2005000765A2 - ダミーウェハ及びその製造方法 - Google Patents
ダミーウェハ及びその製造方法 Download PDFInfo
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- WO2005000765A2 WO2005000765A2 PCT/JP2004/008978 JP2004008978W WO2005000765A2 WO 2005000765 A2 WO2005000765 A2 WO 2005000765A2 JP 2004008978 W JP2004008978 W JP 2004008978W WO 2005000765 A2 WO2005000765 A2 WO 2005000765A2
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- dummy wafer
- silicon carbide
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- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
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Definitions
- the present invention relates to a dummy wafer used in a process for manufacturing a semiconductor such as an LSI.
- the present invention relates to a dummy wafer provided with a coating layer containing silicon carbide on the surface of a dummy wafer.
- a dummy wafer has been used for improving the yield of products and manufacturing highly integrated devices while keeping processing conditions constant in a wafer surface processing step.
- a dummy wafer whose entire wafer is CVD-SiC is widely used.
- SiC Silicon carbide
- the filling of a wafer into a device manufacturing apparatus or the like is automatically carried by a robot designed based on the standard size of a silicon wafer, and therefore, warping of a dummy wafer may cause a carrying trouble.
- PB_S dummy wafer
- PB_S dummy wafer
- Patent Document 1 Japanese Patent Application Laid-Open No. 10-163079
- a coating layer containing carbide Kei containing below 70 beta m or more coating thickness 20 mu m Manufacturing method of dummy wafer comprising the step of providing by chemical vapor deposition a coating layer containing carbide Kei containing below 70 beta m or more coating thickness 20 mu m Manufacturing method of dummy wafer.
- the method of producing da Miweha according to the coating thickness of the coating layer described above is not more than 20 beta m or 40 beta m above (4).
- the present inventors have conducted intensive studies and have found that the surface of a dummy wafer formed by sintering a mixture containing silicon carbide powder and a nonmetallic sintering aid contains silicon carbide. It has been found that the above-mentioned problems can be solved by providing a coating layer.
- the present invention will be described with reference to embodiments of the present invention, but the present invention is not limited to the following embodiments.
- a dummy wafer as an embodiment of the present invention includes a step of obtaining a silicon carbide sintered body by sintering a mixture containing a silicon carbide powder and a nonmetallic sintering aid; Processing and polishing a silicon sintered body to obtain a dummy wafer; forming a SiC film on the surface of the obtained dummy wafer by chemical vapor deposition (CVD); and polishing the surface of the CVD-processed dummy wafer And a treating step.
- CVD chemical vapor deposition
- Examples of the silicon carbide powder used as a raw material of the silicon carbide dummy wafer include a cast, a / 3 type, an amorphous material, and a mixture thereof.
- a cast a cast, a / 3 type, an amorphous material, and a mixture thereof.
- a / 3 type silicon carbide powder is preferably used.
- the grade of this type silicon carbide powder is no particular limitation on the grade of this type silicon carbide powder.
- generally available type silicon carbide powder can be used.
- the particle size of the silicon carbide powder is preferably small from the viewpoint of high density, and is preferably about 0.01 to 5 m, more preferably about 0.05 to 3 / im. If the particle size force is less than 0.01 / m, it is difficult to handle in processing steps such as weighing and mixing, and if it exceeds 5 ⁇ m, the specific surface area is small, that is, the contact area with the adjacent powder becomes small. However, it is not preferable because it is difficult to increase the density.
- suitable hydrocarbon Kei MotoHara Ryoko body a particle size of 0. 05- 1 ⁇ m, a specific surface area of 5 m 2 / g or more, free carbon than 1%, the oxygen content of 1% or less are preferably used.
- the particle size distribution of the silicon carbide powder used is not particularly limited, and the production density of the silicon carbide sintered body may be reduced from the viewpoint of improving the packing density of the powder and the reactivity of the silicon carbide. Those having two or more maxima can also be used.
- high-purity silicon carbide sintered body which is preferably a high-purity silicon carbide sintered body used for a dummy wafer
- high-purity silicon carbide powder must be used as a raw material of silicon carbide powder. Powder may be used.
- the high-purity silicon carbide powder includes, for example, a silicon source containing at least one liquid silicon compound, and at least one liquid organic compound that generates carbon by heating. And a baking step of baking a solid obtained by homogeneously mixing a carbon source containing the above and a polymerization or crosslinking catalyst in a non-oxidizing atmosphere.
- a silicon compound used for producing a high-purity silicon carbide powder
- a polymer of alkoxysilane (mono-, di-, tri-, tetra-) and tetraalkoxysilane is used as the liquid.
- alkoxysilanes tetraalkoxysilane is preferably used, and specific examples include methoxysilane, ethoxysilane, propoxysilane, butoxysilane and the like.
- ethoxysilane is preferred in terms of handling.
- polymer of the tetraalkoxysilane examples include a low molecular weight polymer (oligomer) having a degree of polymerization of about 2 to 15 and a liquid polymer of a high-polymerization-based keic acid polymer.
- Solid oxides that can be used in combination with these include silicon oxide.
- silicon oxide means, in addition to Si ⁇ , silica sol (colloidal ultrafine silica-containing liquid, containing OH groups and alkoxy groups), silicon dioxide (silica gel, fine silica, quartz powder), etc. including.
- an oligomer of tetraethoxysilane and a mixture of an oligomer of tetraethoxysilane and fine powder silica are preferred from the viewpoint of good homogeneity and handling properties.
- a high-purity substance is used for these silicon sources, and the initial impurity content is preferably 20 ppm or less, more preferably 5 ppm or less.
- a liquid compound or a combination of a liquid compound and a solid compound can be used as the organic compound that generates carbon by heating used in the production of high-purity silicon carbide powder.
- Organic compounds which have a high rate and are polymerized or cross-linked by a catalyst or heating are exemplified.
- phenolic resins, furan resins, polyimides, polyurethanes, resin monomers such as polyvinyl alcohol, and prepolymers are preferred, and liquid substances such as cellulose, sucrose, pitch, and tar are also used. preferable.
- the purity can be appropriately controlled and selected depending on the purpose. However, in particular, when high-purity silicon carbide powder is required, it is desirable to use an organic compound containing no more than 5 ppm of each metal.
- C / Si ratio is defined by elemental analysis of a carbide intermediate obtained by carbonizing the mixture at 1000 ° C. Stoichiometrically, when the C / Si ratio is 3.0, the free carbon in the generated silicon carbide should be 0%, but in practice, low C / Si Free carbon is evolved in the ratio. It is important to determine the blending in advance so that the amount of free carbon in the resulting silicon carbide powder does not become an unsuitable amount for the production use of a sintered body or the like. Usually, in the case of baking at 1600 ° C.
- free carbon can be suppressed by setting the C / Si ratio to 2.0-2.5, and this range can be suitably used.
- the C / Si ratio is set to 2.5 or more, free carbon increases remarkably.
- this free carbon since this free carbon has an effect of suppressing grain growth, it may be appropriately selected depending on the purpose of forming particles.
- the CZSi ratio for obtaining pure silicon carbide fluctuates. In this case, the ratio is not necessarily limited to the above range of the CZSi ratio.
- the curing method include a method of crosslinking by heating, a method of curing with a curing catalyst, and a method of electron beam or radiation.
- the curing catalyst can be appropriately selected according to the carbon source.
- acids such as toluenesulfonic acid, toluenecarboxylic acid, acetic acid, oxalic acid, hydrochloric acid, and sulfuric acid, and hexamine and the like are used. Use amines and the like.
- the raw material mixture solid is heated and carbonized as necessary. This is carried out by heating the solid at 800 ° C-1000 ° C for 30 minutes to 120 minutes in a non-oxidizing atmosphere such as nitrogen or argon.
- silicon carbide is generated.
- the firing temperature and time can be selected appropriately according to the characteristics such as the desired particle size. For more efficient production, the temperature at 1600 ° C-1900 ° C Firing is desirable.
- impurities can be further removed by performing a heat treatment at 2000 to 2100 ° C. for 5 to 20 minutes during the above-mentioned firing.
- the method for producing a raw material powder described in the method for producing a single crystal previously filed by the present applicant as Japanese Patent Application No. 7-241856 is filed.
- at least one selected from high-purity tetraalkoxysilane, tetraalkoxysilane polymer, and silicon oxide is used as a silicon source, and a high-purity organic compound that generates carbon by heating is used as a carbon source.
- the mixture obtained by homogenously mixing the mixture is placed in a non-oxidizing atmosphere, and then heated and fired to produce a silicon carbide powder.
- the nonmetallic sintering aid used by mixing with the above-mentioned silicon carbide powder a substance called a carbon source that generates carbon by heating is used. Or a silicon carbide powder whose surface is coated with these (particle size: about 0.1 Ol-1 / im). The former is preferred from the viewpoint of the effect.
- a substance used in place of a conventional sintering aid is used.
- substances having a function of accelerating the reaction by being added as a nonmetallic sintering aid can be cited. Specific examples include coal tar pitch, phenolic resin, furan resin, epoxy resin, phenolic resin, monosaccharides such as glucose, oligosaccharides such as sucrose, and polysaccharides such as cellulose and starch, etc. Sugars.
- liquid at room temperature soluble in a solvent, softened by heating such as thermoplastic or heat-meltable or liquid, for the purpose of being homogeneously mixed with silicon carbide powder.
- a phenolic resin having a high strength of the obtained molded article particularly a resol-type phenolic resin is preferable.
- this organic compound When this organic compound is heated, it forms an inorganic carbon-based compound such as carbohydrate on the particle surface (near), and efficiently removes the surface oxide film of silicon carbide during sintering. It is thought that it works effectively as a sintering aid.
- carbon black and graphite powder which are conventionally known as carbon-based sintering aids, may be added as the sintering aid, or may be obtained by adding the above non-metallic sintering aid. It cannot achieve the desired effect.
- the nonmetallic sintering aid be dissolved or dispersed in a solvent and mixed.
- Solvents are suitable for the compound used as the nonmetallic sintering aid, specifically, ethyl alcohol for phenolic resin, which is an organic compound that generates carbon by suitable heating. And lower alcohols, ethyl ether, acetone, and the like. Also, it is preferable to use a non-metallic sintering aid and a solvent having a low impurity content.
- the amount of the nonmetallic sintering aid mixed with the silicon carbide powder is too small, the density of the sintered body will not increase, and if it is too large, the amount of free carbon contained in the sintered body will increase. It tends to hinder densification. Therefore, although it depends on the type of the nonmetallic sintering aid to be used, it is generally preferable to adjust the amount of the additive pulp to be 10% by weight or less, preferably 2 to 5% by weight. . This amount can be determined by previously quantifying the amount of silica (silicon oxide) on the surface of the silicon carbide powder using hydrofluoric acid and calculating the amount stoichiometrically sufficient for its reduction. .
- the amount of carbon added here means that the silica determined by the above method is carbon derived from the nonmetallic sintering aid and is reduced by the following chemical reaction formula. This value is obtained in consideration of the residual carbon ratio of the nonmetallic sintering aid after thermal decomposition (the ratio of carbon generated in the nonmetallic sintering aid).
- the total of carbon atoms derived from the silicon carbide and carbon atoms derived from the nonmetallic sintering aid contained in the silicon carbide sintered body exceeds 30% by weight, and It is preferable that the content is not more than% by weight. If the content is 30% by weight or less, The proportion of impurities contained in the sintered body increases, and if it exceeds 40% by weight, the carbon content increases, the density of the obtained sintered body decreases, and various properties such as the strength and oxidation resistance of the sintered body are obtained. It is not preferable because the characteristics are deteriorated.
- silicon carbide powder and a nonmetallic sintering aid are mixed homogeneously.
- a solvent such as ethyl alcohol
- the mixing is preferably carried out for 10-30 hours, especially for 16-24 hours.
- the solvent is removed at a temperature compatible with the physical properties of the solvent, for example, at a temperature of 50 to 60 ° C in the case of the above-mentioned ethyl alcohol, and the mixture is evaporated to dryness, and then sieved.
- the material of the ball mill container and the ball be a synthetic resin containing no metal.
- a granulating device such as a spray dryer may be used.
- a powder mixture or a powder mixture obtained by the molding step described below is molded at a temperature of 2000 to 2400 ° C and a pressure of 300 ° C. — This is a process of hot-pressing, placed in a molding die under a non-oxidizing atmosphere of 700 kgf / cm 2 .
- the molding die used here is partially or entirely made of graphite or the like so that the molded body and the metal part of the die do not come into direct contact with each other. It is preferable to use a material or to interpose a polytetrafluoroethylene sheet (trade name “Teflon sheet”) or the like in the mold.
- force may be pressurized by the pressure in the hot pressing is 300- 700 kgf / cm 2 conditions S, in particular, when the pressure 400 kgf / cm 2 or more pressurized, the hot press parts used here, for example, It is necessary to select a die, a punch and the like having good pressure resistance.
- heating and heating are performed under the following conditions to sufficiently remove impurities and to reduce the carbon source. It is preferable to perform hot pressing under the above conditions after completely carbonizing the carbon.
- the furnace Heat slowly to 700 ° C when the temperature control of the high-temperature furnace difficult, may be carried out heating continuously until 700 ° C, preferably to the inside of the furnace to 10- 4 torr, until 200 ° C from room temperature The temperature is gradually increased and maintained at the above-mentioned temperature for a certain time. After that, the temperature is further increased gradually and heated to 700 ° C. Furthermore, it is kept at a temperature around 700 ° C for a certain period of time.
- the adsorbed moisture and the binder are decomposed, and carbonization is performed by thermal decomposition of the carbon source.
- a suitable range of the time for maintaining the temperature at around 200 ° C or around 700 ° C is selected depending on the type of the binder and the size of the sintered body. Whether the holding time is sufficient or not can be indicated by the point at which the decrease in the degree of vacuum is reduced to some extent. If rapid heating is performed at this stage, the removal of impurities and the carbonization of the carbon source will not be sufficiently performed, which may cause cracks or voids in the molded body, which is not desirable.
- the temperature is raised from 700 ° C to 1500 ° C over about 6 to 9 hours under the above conditions, and held at a temperature of 1500 ° C for about 15 hours. I do.
- this step it is considered that a reduction reaction of silicon dioxide and silicon oxide is performed. It is important to complete this reduction reaction sufficiently to remove oxygen bonded with silicon, and the holding time at a temperature of 1500 ° C depends on the generation of carbon monoxide, a by-product of the reduction reaction. It is necessary to perform the process until the completion of the reaction, that is, until the degree of vacuum decreases and the degree of vacuum recovers to around 1300 ° C, which is the temperature before the start of the reduction reaction.
- the temperature 2000- 2400 ° C After the non-oxidizing atmosphere within the furnace, the temperature 2000- 2400 ° C, heated so as to be pressure 300- 700kgfZc m 2, performs pressurization.
- the pressure at the time of pressing can be selected according to the particle size of the raw material powder, and when the raw material powder has a small particle size, a suitable sintered body can be obtained even if the pressure at the time of pressing is relatively small.
- the temperature rise from 1500 ° C to the maximum temperature of 2000 2400 ° C takes 2-4 hours, but sintering proceeds rapidly at 1850-1900 ° C. Furthermore, the sintering is completed by holding at this maximum temperature for 1 to 3 hours.
- the maximum temperature is less than 2000 ° C.
- the densification becomes insufficient, and if it exceeds 2400 ° C., there is a possibility that the raw material of the molded article may sublime (decompose), which is not preferable.
- the pressure condition is insufficient is the density less than 500k gf / cm 2, exceeds 700 kgf / cm 2 become a cause of graphitic of any mold damage, unfavorable from the production efficiency.
- the molding step means that the raw material powder obtained by homogeneously mixing the silicon carbide powder and the carbon source is placed in a molding die, and the temperature is 80 to 300 ° C, and the temperature is 5 to 60 ° C. This is a step of preparing a compact in advance by heating and pressurizing for a minute.
- the raw material powder be filled into the mold as closely as possible from the viewpoint of increasing the density of the final sintered body.
- a bulky powder can be made compact beforehand when filling a sample for hot pressing, so that it is easy to repeatedly produce a high-density molded article or a thick molded article.
- the calorie heat temperature is 80-300. C, preferably 120-140. C range, the range of pressure 60- LOOkgfZc, the density of the filled raw material powder 1. 5gZcm d or more, 5 preferably to a 1. 9 g / cm 3 or more and pressed under pressure After holding for 60 minutes, preferably for 20 minutes, a molded body composed of the raw material powder is obtained.
- a method such as vibration filling when disposing the compact in a molding die in order to increase the density.
- the average particle size density is lzm about powder is 1.
- density of the average particle size of about 0. 5 zm powder is 1. 5 g / cm 3 or more Is more preferable.
- density of the average particle size of about 0. 5 zm powder is 1. 5 g / cm 3 or more Is more preferable.
- this molded body Before being subjected to the next sintering step, this molded body can be subjected to cutting processing so as to be compatible with a hot press die used in advance.
- This compact is placed in a mold at a temperature of 2000 to 2400 ° C. and a pressure of 300 to 700 kgf / cm 2 under a non-oxidizing atmosphere, and subjected to a hot pressing process, that is, a firing process. It is intended to obtain a silicon carbide sintered body of high density and high purity.
- Carbide Kei sintered body produced by the [0055] above is well densified, density 2. is 9 g / cm 3 or more. If the density of the obtained sintered body is less than 2.9 g / cm 3 , the mechanical properties such as bending strength and breaking strength and the electrical properties are reduced, and the number of particles is increased, and the pollution is deteriorated. Is not preferred.
- the density of the silicon carbide sintered body is more preferably 3. Og / cm 3 or more.
- the obtained sintered body is a porous body, it is inferior in heat resistance, oxidation resistance, chemical resistance and mechanical strength, is difficult to clean, has micro cracks, and contaminates micro pieces.
- the material has inferior physical properties such as being a substance and having gas permeability, and also has problems such as limited use.
- the total content of impurity elements in the silicon carbide sintered body obtained as described above is 5 ppm or less, preferably 3 ppm or less, more preferably 1 ppm or less. From the viewpoint of the application of, the impurity contents obtained by these chemical analyzes are only meaningful as reference values. Practically, the evaluation also differs depending on whether the impurities are uniformly distributed or locally unevenly distributed. Therefore, those skilled in the art generally evaluate the extent to which impurities contaminate a wafer under predetermined heating conditions by using a practical apparatus by various means.
- the solid obtained by homogeneously mixing the liquid silicon compound, the liquid organic compound that generates carbon by heating, and the polymerization or cross-linking catalyst is heated and carbonized in a non-oxidizing atmosphere.
- the total content of impurity elements contained in the silicon carbide sintered body can be reduced to lppm or less.
- the impurity element refers to an element belonging to Group 1 to Group 16 in the periodic table of the revised edition of the IUPAC Inorganic Chemical Nomenclature 1989 and having an atomic number of 3 or more, and an atomic number of 6-8 and 14 Excluding elements.
- the bending strength at room temperature is 50.0-65. Okgf / mm 2 , 1500.
- the flexural strength at C is 55. 0-80. Okgf / mm 2 , yank, rate 3.5 ⁇ 10 4 — 4.5 X 10 4 , Vickers hardness 2000 2000 kgf / mm 2 or more, Poisson's ratio is . 0. 14-0 21, the thermal expansion coefficient of 3. 8 X 10- 6 - 4. 2 X 10 - 6 (.C-, thermal conductivity 150W / m'k above, the specific heat is 0. 15-0 18 cal / g'.C, heat shock resistance is preferably 500-700 AT ° C, and specific resistance is preferably 1 ⁇ 'cm or less.
- a dummy wafer is obtained by subjecting the silicon carbide sintered body obtained by the above-described manufacturing method to processing, polishing, cleaning, and the like.
- the dummy wafer can be manufactured by forming a columnar sample (sintered body) by hot pressing or the like and slicing the sample in the radial direction.
- electric discharge machining is suitably used as a processing method.
- a dummy wafer having a diameter of 00 400 mm and a thickness of 0.5-1. Omm can be manufactured.
- the center line average roughness (Ra) can be adjusted in the range of 0.01 to 10 zm.
- the purity of the silicon carbide powder as the raw material powder, the silicon source and the carbon source for producing the raw material powder, and the inert gas used to make the non-oxidizing atmosphere are:
- the content of each impurity element is preferably 5 ppm or less, but it is not necessarily limited to this as long as it is within the allowable range of purification in the heating and sintering steps.
- the impurity element belongs to Group 1 to 16 elements in the Periodic Table of the revised IUPAC Inorganic Chemical Nomenclature 1989, and has an atomic number of 3 or more, and atomic numbers 6 to 8 and the same. Exclude 14 elements.
- a coating layer containing silicon carbide is provided on the surface of the dummy wafer by a chemical vapor deposition method (CVD).
- CVD chemical vapor deposition method
- the coating layer is provided on a surface including at least one of the upper and lower main surfaces of the dummy wafer. From the viewpoint of eliminating the restriction on the use, it is more preferable to provide the dummy wafer on both the upper and lower main surfaces, and it is more preferable to provide the dummy wafer on the entire surface including the side surface of the dummy wafer.
- the coating layer is polished under polishing conditions according to the use of the dummy wafer.
- the total thickness of the dummy wafer needs to be a value according to the standard size of the Si wafer.
- the coating layer is too thick, the base material must be thinned, and as a result, the dummy wafer tends to be warped. Therefore, in order to eliminate the warpage of the dummy wafer, it is preferable to keep the thickness of the base material to some extent and to reduce the thickness of the coating layer so that the base material is not exposed in the polishing step.
- the thickness of the coating layer such that the thickness of the coating layer after polishing the coating layer is 70 ⁇ m at the maximum. If the thickness of the coating layer exceeds 70 xm, the thickness of the base material must be reduced, so that the warpage tends to occur. At this time, it is preferable to adjust the thickness of the coating layer to 20 ⁇ m or more and 70 ⁇ m or less by controlling the CVD processing conditions and the polishing conditions of the coating layer to 20 ⁇ m or more and 40 ⁇ m or less. To adjust I like it. It is convenient that the surface roughness (Ra) is 10 nm or less, preferably 1 nm or less. The lower limit of the surface roughness (Ra) is particularly preferably Onm, but the lower limit is about 0.2 nm.
- a very high-purity dummy wafer is obtained. Also, by adjusting the polishing conditions after CVD processing, a high-purity dummy wafer that can be used as a monitor wafer can be obtained.
- This compact was placed in a graphite mold and hot-pressed under the following conditions.
- the physical properties of the sintered body obtained in Example 1 were measured in detail. As a result, the bending strength at room temperature was 50. Okgf / mm 2 and the bending strength at 1500 ° C. 50. Okgf / mm 2 , Young's modulus is 4.1 ⁇ 1 Poisson's ratio is 0.15, the thermal expansion coefficient of 3. 9 X 10- 6 ° C- 1 , thermal conductivity 200WZm'k above, the specific heat is 0. 16calZg '° C, heat shock ⁇ is 530 AT ° C It was confirmed that all of the above preferable physical properties were satisfied.
- the sintered body obtained as described above was sliced with an electric discharge machine, and the cut surface was polished with a grinder to obtain a dummy wafer having a diameter of 200 mm and a thickness of 0.6 mm. At that time, the upper and lower main surfaces of the dummy wafer were adjusted to a predetermined surface roughness (Ra).
- CVD treatment was performed on the obtained dummy wafer to form a silicon carbide film layer on the upper and lower main surfaces of the dummy wafer. Then, the coating layer was polished to obtain a double-coated dummy wafer having a film thickness after polishing of 42 ⁇ , a surface roughness (Ra) of 0.56 nm, and a maximum unevenness (Ry) of 28 nm.
- This compact was placed in a graphite mold and hot-pressed under the following conditions.
- the physical properties of the sintered body obtained in Example 2 were measured in detail. As other characteristics, the bending strength at room temperature was 50. Okgf / mm 2 , and the bending strength at 1500 ° C. 50. Okgf / mm 2, the Young's modulus is 4. 1 X 10 4, Poisson's ratio 0.15, the thermal expansion coefficient of 3. 9 X 10- 6 ° C- 1 , thermal conductivity 200WZm'k above, specific heat was 0.16 calZg '° C, and the thermal shock resistance was 530 AT ° C, confirming that all of the above preferable physical properties were satisfied.
- the sintered body obtained as described above was sliced by an electric discharge machine, and the cut surface was polished by a grinder to obtain a dummy wafer having a diameter of 200 mm and a thickness of 0.6 mm. At that time, the upper and lower main surfaces and side surfaces of the dummy wafer were adjusted to a predetermined surface roughness (Ra).
- Ra surface roughness
- CVD treatment was performed on the obtained dummy wafer to form a silicon carbide coating layer on the upper and lower main surfaces and side surfaces of the dummy wafer. Then, by polishing the coating layer, a dummy wafer having a coating thickness of 38 zm after polishing, a surface roughness (Ra) of 0.48 nm, and a maximum value of irregularities (Ry) of 22 nm was obtained.
- Measuring device 3D CNC image measuring device QUICK VISION, manufactured by Mitutoyo Corporation
- the surface roughness of the obtained dummy wafers of Examples 1 and 2 was confirmed under the following experimental conditions. As a result, it was confirmed that the surface roughness (Ra) force of pores as seen in the sintered body on the surface was less than SlOnm, and the maximum value of irregularities (Ry) was less than 50 nm.
- Measuring device Olympus Optical Co., Ltd., trade name "NV2000 scanning probe microscope", measuring field of view: 10 / im x 10 / im, magnifications of 500 times and 5000 times
- a dummy wafer having small warpage and having no pores on the surface is provided.
- a dummy wafer that can be used as a monitor wafer is provided.
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US10/561,952 US20060240287A1 (en) | 2003-06-27 | 2004-06-25 | Dummy wafer and method for manufacturing thereof |
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WO2006080423A1 (ja) * | 2005-01-31 | 2006-08-03 | Bridgestone Corporation | モニターウェハ及びウェハのモニター方法 |
US8288285B2 (en) | 2006-04-27 | 2012-10-16 | Solvay Fluor Gmbh | Reversible water-free process for the separation of acid-containing gas mixtures |
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US8573836B2 (en) * | 2006-10-26 | 2013-11-05 | Tokyo Electron Limited | Apparatus and method for evaluating a substrate mounting device |
JP2014196209A (ja) * | 2013-03-29 | 2014-10-16 | 株式会社ブリヂストン | 炭化ケイ素焼結体のアニール方法 |
JP2015173154A (ja) * | 2014-03-11 | 2015-10-01 | 東京エレクトロン株式会社 | 縦型熱処理装置、縦型熱処理装置の運転方法及び記憶媒体 |
JP2015207695A (ja) * | 2014-04-22 | 2015-11-19 | 住友電気工業株式会社 | エピタキシャルウエハの製造方法およびエピタキシャルウエハ |
KR102564984B1 (ko) * | 2021-10-05 | 2023-08-14 | 하나머티리얼즈(주) | 정전척 보호 플레이트 및 그의 제조 방법 |
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JP2000091171A (ja) * | 1998-09-09 | 2000-03-31 | Bridgestone Corp | ウェハ |
JP2000505043A (ja) * | 1997-03-03 | 2000-04-25 | サン―ゴバン インダストリアル セラミックス,インコーポレイティド | 高温圧縮炭化ケイ素ウェハー及びダミーウェハーとしてのその使用方法 |
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US4312954A (en) * | 1975-06-05 | 1982-01-26 | Kennecott Corporation | Sintered silicon carbide ceramic body |
US4856887A (en) * | 1987-04-01 | 1989-08-15 | Hughes Aircraft Company | Lightweight silicon carbide mirror |
JPH0774839B2 (ja) * | 1991-09-30 | 1995-08-09 | 東芝セラミックス株式会社 | Sor用ミラー |
JP3524679B2 (ja) * | 1996-06-21 | 2004-05-10 | 東芝セラミックス株式会社 | 高純度CVD−SiC質の半導体熱処理用部材及びその製造方法 |
JPH1012692A (ja) * | 1996-06-25 | 1998-01-16 | Nisshinbo Ind Inc | ダミーウエハ |
US5904778A (en) * | 1996-07-26 | 1999-05-18 | Applied Materials, Inc. | Silicon carbide composite article particularly useful for plasma reactors |
US6090733A (en) * | 1997-08-27 | 2000-07-18 | Bridgestone Corporation | Sintered silicon carbide and method for producing the same |
DE60118085T2 (de) * | 2000-12-27 | 2006-11-02 | Toshiba Ceramics Co., Ltd. | Silicium/Siliciumkarbid-Komposit und Verfahren zur Herstellung desselben |
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- 2004-05-12 JP JP2004142235A patent/JP2005039212A/ja active Pending
- 2004-06-25 WO PCT/JP2004/008978 patent/WO2005000765A2/ja active Application Filing
- 2004-06-25 US US10/561,952 patent/US20060240287A1/en not_active Abandoned
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JP2000513689A (ja) * | 1995-03-01 | 2000-10-17 | サン−ゴバン/ノートン インダストリアル セラミックス コーポレイション | 新規なシリコンカーバイドダミーウエハー |
JP2000505043A (ja) * | 1997-03-03 | 2000-04-25 | サン―ゴバン インダストリアル セラミックス,インコーポレイティド | 高温圧縮炭化ケイ素ウェハー及びダミーウェハーとしてのその使用方法 |
JP2000091171A (ja) * | 1998-09-09 | 2000-03-31 | Bridgestone Corp | ウェハ |
JP2003282664A (ja) * | 2002-03-27 | 2003-10-03 | Mitsui Eng & Shipbuild Co Ltd | SiCパーティクルモニタウェハ |
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WO2006080423A1 (ja) * | 2005-01-31 | 2006-08-03 | Bridgestone Corporation | モニターウェハ及びウェハのモニター方法 |
US8288285B2 (en) | 2006-04-27 | 2012-10-16 | Solvay Fluor Gmbh | Reversible water-free process for the separation of acid-containing gas mixtures |
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WO2005000765A3 (ja) | 2005-03-03 |
US20060240287A1 (en) | 2006-10-26 |
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