WO2004085313A1 - 二酸化ケイ素薄膜とその製造法 - Google Patents
二酸化ケイ素薄膜とその製造法 Download PDFInfo
- Publication number
- WO2004085313A1 WO2004085313A1 PCT/JP2004/004142 JP2004004142W WO2004085313A1 WO 2004085313 A1 WO2004085313 A1 WO 2004085313A1 JP 2004004142 W JP2004004142 W JP 2004004142W WO 2004085313 A1 WO2004085313 A1 WO 2004085313A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- thin film
- silicon dioxide
- derivative
- sol
- amorphous silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C11/00—Multi-cellular glass ; Porous or hollow glass or glass particles
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/06—Glass compositions containing silica with more than 90% silica by weight, e.g. quartz
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2201/00—Glass compositions
- C03C2201/80—Glass compositions containing bubbles or microbubbles, e.g. opaque quartz glass
Definitions
- the present invention relates to a transparent amorphous silicon dioxide thin film having a low refractive index, which is useful as an optical thin film attached to an optical product.
- Thin films of metal oxides such as aluminum are used for applications such as multilayer reflective films, antireflective films, and photonic crystals in various optical products.
- transparent metal oxide thin films have been manufactured using a vapor deposition method typified by a vapor deposition method or a sputtering method.
- the method for producing a transparent metal oxide thin film by the vapor deposition method requires complicated adjustment of the production equipment, requires fine adjustment for the production operation, and requires relatively long operation time.
- this is not an industrially advantageous production method.
- the sol-gel method is a method for producing a metal oxide which comprises hydrolyzing a metal alkoxide dissolved in a solvent and subjecting it to condensation polymerization in the next step. Since high quality metal oxide thin films can be obtained, they are widely used especially as a method of manufacturing optical thin films formed on the surface of optical products.
- Anti-reflection film using ultrafine particles written by Atsumi Wakabayashi, ⁇ Plus E, Vol. 24, No. 11, p. 1 2 3 1-1 2 3 5 (January 2002) , Tin oxide containing antimony It describes an antireflection film formed using nanometer-sized fine particles such as tin-containing indium oxide, so-called ultrafine particles, as a thin film.
- 91-L 293 introduces a technique for manufacturing photonic crystals by using a method in which a mold is immersed in titanium dioxide gel formed from a high concentration of alkoxide, followed by drying and firing.
- Metal oxide thin films that can be used as high-quality optical thin films with relatively simple manufacturing equipment and manufacturing processes by using the sol-gel method developed as an industrially advantageous thin film manufacturing method that replaces the vapor deposition method Can be obtained.
- sol-gel method known so far, an optical thin film having a sufficiently low refractive index has not been obtained even with a silicon dioxide thin film.
- the silicon dioxide thin film can be manufactured as an optical thin film having a desired low refractive index by using the air-gel method. Has not yet been sufficiently studied as a production method that can be used industrially.
- the production of the optical thin film by the sol-gel method and the production of the optical thin film by the air-port gel method which have been known so far, have not reached a sufficiently satisfactory level in terms of industrial production.
- optical thin films manufactured by these methods have a problem that sufficient physical strength and surface hardness cannot be obtained.
- the anti-reflective coating formed on the surface of electroluminescent (EL) elements especially optical products such as organic electroluminescent elements, optical lenses, and displays such as CRTs, comes into contact with human hands and external equipment. Because they often do Scratch resistance is required.
- the optical thin film obtained by the sol-gel method or the air-gel method which is a method of adjusting the refractive index by allowing a large number of air bubbles to exist inside, has the problem that it is difficult to have sufficiently high scratch resistance due to the presence of the air bubbles. is there. For the same reason, there is also a problem that the mechanical strength such as the bending resistance of the thin film and the heat resistance are low.
- An object of the present invention is to provide a silicon dioxide transparent thin film exhibiting a low refractive index, high scratch resistance, physical strength, and heat resistance.
- the porosity is 50% or more.
- the diameter of the fine voids occupying 80% by volume or more of the entire fine voids is 2 nm or less.
- the diameter of the fine voids occupying 90% by volume or more of the entire fine voids is 2 nm or less.
- the method according to (5) further comprising, during the hydrolysis and condensation polymerization of the silicon alkoxide, a salt of a weak acid and a weak base, a salt of a hydrazine derivative, a salt of a hydroxylamine derivative, and a salt of an amidine derivative.
- a process comprising the presence of at least one salt catalyst selected from the group.
- the thickness of the thin film is in the range of 10 nm to 20 m.
- the volume of the entire fine void and the ratio (% by volume) of the fine void having a specific diameter mean a value measured by the following method.
- the pore volume per mass per specific diameter is determined by a nitrogen adsorption device. Multiplying this by the density determined by the density measuring device gives the pore volume per volume per specific diameter. When this is expressed as a percentage, it is the ratio of the fine voids per specific diameter.
- the silicon dioxide thin film of the present invention has a large number of voids (bubbles) at the nanometer level as compared with a silicon dioxide thin film obtained by a conventionally known sol-gel method.
- the main feature is that the gap is remarkably small. That is, in the silicon dioxide thin film of the present invention, a large number of voids are present as very fine voids in the thin film. Therefore, the silicon dioxide thin film of the present invention not only exhibits high transparency but also has a desired low level. Refractive index and high mechanical strength (especially ⁇ ⁇ scratch resistance and high bending resistance) and heat resistance (heat deformation resistance) are exhibited.
- the silicon dioxide thin film of the present invention is obtained by hydrolyzing a silicon alkoxide in an alcohol solvent in the presence of water and at least one compound selected from the group consisting of a hydroxyaldehyde derivative, a hydroxyacetic acid derivative and a hydroxynitrile derivative.
- a step of obtaining a sol (a low-viscosity liquid mixture) by condensation polymerization, a step of forming the sol into a thin film, and a step of heating and firing the sol thin film. can be manufactured.
- a catalyst is present.
- the method for producing a silicon dioxide thin film according to the above process is already known as a method for producing a silicon dioxide thin film by a sol-gel method, and has been put to practical use.
- a lower aliphatic alcohol solvent such as methanol, ethanol, n-propanol, isopropanol, n-butanol or isobutanol.
- the hydrolysis and condensation polymerization of the silicon alkoxide are carried out from a hydroxyaldehyde derivative (or a hydroxyketone derivative), a hydroxycarboxylic acid derivative, an aryl alcohol derivative and a hydroxynitrile derivative.
- a hydroxyaldehyde derivative or a hydroxyketone derivative
- a hydroxycarboxylic acid derivative or a hydroxycarboxylic acid derivative
- an aryl alcohol derivative a hydroxynitrile derivative.
- hydroxyaldehyde derivatives include hydroxyacetone, acetoin, 3-hydroxy-3-methyl-2-butanone, and fructo-1-one
- hydroxycarboxylic acid derivatives examples include glycolic acid, lactic acid, hydroxyisobutyric acid, thioglycolic acid, glycolic acid ester, lactic acid ester, 2-hydroxy-isobutyric acid ester, thioglycolic acid ester, malic acid, tartaric acid, citric acid, lingoic acid Esters, tartaric esters, and citrate esters;
- examples of aryl alcohol derivatives include 1-buten-3-ol, 2-methyl-3-buten-2-ol, 1-penten-3-ol, 1— Hexene-3-ol, crotyl alcohol, 3-methyl-2-butene_1 Monool, and tinamyl alcohol; and examples of hydroxynitrile derivatives include
- At the time of hydrolysis and condensation polymerization of silicon alkoxide at least one salt selected from the group consisting of a salt of a weak acid and a weak base, a salt of a hydrazine derivative, a salt of an amidine derivative, and a salt of a hydroxylamine derivative.
- a salt of a weak acid and a weak base Preferably, two compounds (salt catalysts) are present.
- the salt of a weak acid and a weak base include ammonium carbonate (eg, ammonium acetate, ammonium formate), ammonium carbonate, and ammonium hydrogencarbonate.
- At least one salt catalyst selected from the group consisting of salts of hydrazine derivatives, salts of amidine derivatives and salts of hydroxylamine derivatives, and the function thereof are described in JP-A-2000-26849.
- the publication describes a titanium oxide gel having photochromic properties and a salt catalyst used in the production of glass products.
- the hydrolysis of silicon alkoxide is promoted by the presence of a hydrolysis accelerator during the hydrolysis and condensation polymerization of silicon alkoxide, and a plurality of alkoxides of each silicon alkoxide are promoted.
- the groups are hydrolyzed at about the same time, and each is converted to an active hydroxyl group, so that the polymer chains are three-dimensionally oriented rather than extending the polymer chains in one dimension to form long-chain polymers. It is considered that the growing matrix structure is likely to be preferentially generated. It is presumed that, due to the formation of the matrix structure in which the polymer chains preferentially extend in the three-dimensional direction, the voids formed in the resulting condensed polymer become fine voids on the order of molecules.
- the sol obtained by hydrolysis and condensation polymerization of silicon alkoxide is then formed into a thin film.
- a well-known method such as a dip coating method in which the sol is uniformly applied to the substrate by a method such as spin coating or a method in which the substrate is immersed in the sol and then pulled up. It can be done using. It is desirable that the substrate used be subjected to a surface treatment such as a plasma treatment in the presence of oxygen gas.
- the sol thin film is then heated and fired to obtain an amorphous silicon dioxide thin film which is the object of the present invention.
- the heating and baking is usually performed at a temperature in the range of 100 to 110 ° C.
- the amorphous diacid generated by changing the conditions such as the mixing temperature and the stirring time during the formation of the sol, or by selecting the heating and firing temperature.
- the porosity of the silicon nitride thin film can be adjusted, and the refractive index can be adjusted at the same time.
- This mixture sol was applied to a silicon substrate using a spin coater to form a uniform coating film.
- the mixed sol coating film was heated and baked at 300 ° C. for 2 hours to obtain a silicon dioxide amorphous thin film having a thickness of 130 nm.
- the refractive index (500 nm) of this silicon dioxide thin film was 1.16.
- this silicon dioxide thin film contained a large number of fine voids.
- the porosity was 80%, and the diameter of the fine voids occupying 90% by volume or more of the entire fine voids was 2 nm or less. .
- the surface of the silicon dioxide thin film showed high scratch resistance.
- the amorphous silicon dioxide thin film of the present invention exhibits a low refractive index, a high physical strength (eg, scratch resistance), and a high heat resistance, it can be advantageously used as an optical thin film of an optical product used for various applications.
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- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Silicon Compounds (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/550,859 US20060194453A1 (en) | 2003-03-25 | 2004-03-25 | Silicon dioxide film and process for preparation of the same |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003083915A JP2004292190A (ja) | 2003-03-25 | 2003-03-25 | 二酸化ケイ素薄膜とその製造法 |
| JP2003-083915 | 2003-03-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2004085313A1 true WO2004085313A1 (ja) | 2004-10-07 |
Family
ID=33094977
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2004/004142 Ceased WO2004085313A1 (ja) | 2003-03-25 | 2004-03-25 | 二酸化ケイ素薄膜とその製造法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20060194453A1 (enExample) |
| JP (1) | JP2004292190A (enExample) |
| WO (1) | WO2004085313A1 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010189212A (ja) * | 2009-02-17 | 2010-09-02 | Shinshu Univ | 多孔質シリカ膜およびその製造方法 |
| TWI457586B (zh) * | 2011-06-30 | 2014-10-21 | Nat Univ Tsing Hua | 一種雙穩態光子晶體 |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006036598A (ja) * | 2004-07-28 | 2006-02-09 | Ube Nitto Kasei Co Ltd | 多孔質シリカ系薄膜の製造方法、多孔質シリカ系薄膜及び構造物 |
| JP2006342049A (ja) * | 2005-05-09 | 2006-12-21 | Hitachi Chem Co Ltd | シリカ系被膜、シリカ系被膜形成用組成物、シリカ系被膜の形成方法及び積層体 |
| JP2006342048A (ja) * | 2005-05-09 | 2006-12-21 | Hitachi Chem Co Ltd | シリカ系被膜、シリカ系被膜形成用組成物、シリカ系被膜の形成方法及び積層体 |
| JP2007279613A (ja) * | 2006-04-12 | 2007-10-25 | Totoku Electric Co Ltd | 光ファイバ耐熱固定方法およびレンズ付耐熱光ファイバ |
| JP2008174617A (ja) * | 2007-01-17 | 2008-07-31 | Shinshu Univ | 超親水性膜 |
| US7863579B2 (en) * | 2007-05-09 | 2011-01-04 | Avraham Suhami | Directional neutron detector |
| TWI493598B (zh) * | 2007-10-26 | 2015-07-21 | Applied Materials Inc | 利用光阻模板遮罩的倍頻方法 |
| JP5464480B2 (ja) * | 2009-07-06 | 2014-04-09 | 国立大学法人信州大学 | コーティング液及びハードコート構造 |
| JP5932652B2 (ja) | 2009-10-24 | 2016-06-08 | スリーエム イノベイティブ プロパティズ カンパニー | 光学構造物 |
| US10405044B1 (en) | 2014-09-30 | 2019-09-03 | Apple Inc. | Content notification system and method |
| US20160168035A1 (en) | 2014-12-15 | 2016-06-16 | Cpfilms Inc. | Abrasion-resistant optical product with improved gas permeability |
| KR20230019296A (ko) | 2021-07-29 | 2023-02-08 | 삼성디스플레이 주식회사 | 표시 장치 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1087316A (ja) * | 1995-11-16 | 1998-04-07 | Texas Instr Inc <Ti> | ナノ多孔質アエロゲル用の低揮発性溶剤基前駆物質 |
| JPH1129316A (ja) * | 1997-07-09 | 1999-02-02 | Teikoku Chem Ind Corp Ltd | シリカ膜作成用塗布液組成物およびシリカ膜形成方法 |
| JP2000026849A (ja) * | 1998-07-07 | 2000-01-25 | Yasushi Murakami | フォトクロミック性を有する酸化チタンゲルおよびガラス物品 |
| JP2004143029A (ja) * | 2002-08-27 | 2004-05-20 | Ulvac Japan Ltd | 多孔質シリカ膜の形成方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3301635A (en) * | 1965-07-01 | 1967-01-31 | Du Pont | Molded amorphous silica bodies and molding powders for manufacture of same |
| US4788164A (en) * | 1987-01-28 | 1988-11-29 | Hoechst Celanese Corporation | Inorganic-organic composite compositions with sustained release properties |
| US5256386A (en) * | 1987-06-29 | 1993-10-26 | Eka Nobel Ab | Method for preparation of silica particles |
| GB8721644D0 (en) * | 1987-09-15 | 1987-10-21 | Unilever Plc | Silicas |
| US4965091A (en) * | 1987-10-01 | 1990-10-23 | At&T Bell Laboratories | Sol gel method for forming thin luminescent films |
| US4979973A (en) * | 1988-09-13 | 1990-12-25 | Shin-Etsu Chemical Co., Ltd. | Preparation of fused silica glass by hydrolysis of methyl silicate |
| US5175027A (en) * | 1990-02-23 | 1992-12-29 | Lord Corporation | Ultra-thin, uniform sol-gel coatings |
| US5807430A (en) * | 1995-11-06 | 1998-09-15 | Chemat Technology, Inc. | Method and composition useful treating metal surfaces |
| US5869141A (en) * | 1996-11-04 | 1999-02-09 | The Boeing Company | Surface pretreatment for sol coating of metals |
-
2003
- 2003-03-25 JP JP2003083915A patent/JP2004292190A/ja active Pending
-
2004
- 2004-03-25 US US10/550,859 patent/US20060194453A1/en not_active Abandoned
- 2004-03-25 WO PCT/JP2004/004142 patent/WO2004085313A1/ja not_active Ceased
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1087316A (ja) * | 1995-11-16 | 1998-04-07 | Texas Instr Inc <Ti> | ナノ多孔質アエロゲル用の低揮発性溶剤基前駆物質 |
| JPH1129316A (ja) * | 1997-07-09 | 1999-02-02 | Teikoku Chem Ind Corp Ltd | シリカ膜作成用塗布液組成物およびシリカ膜形成方法 |
| JP2000026849A (ja) * | 1998-07-07 | 2000-01-25 | Yasushi Murakami | フォトクロミック性を有する酸化チタンゲルおよびガラス物品 |
| JP2004143029A (ja) * | 2002-08-27 | 2004-05-20 | Ulvac Japan Ltd | 多孔質シリカ膜の形成方法 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010189212A (ja) * | 2009-02-17 | 2010-09-02 | Shinshu Univ | 多孔質シリカ膜およびその製造方法 |
| TWI457586B (zh) * | 2011-06-30 | 2014-10-21 | Nat Univ Tsing Hua | 一種雙穩態光子晶體 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2004292190A (ja) | 2004-10-21 |
| US20060194453A1 (en) | 2006-08-31 |
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