WO2004082337A1 - 表示パネル及びその製造方法 - Google Patents
表示パネル及びその製造方法 Download PDFInfo
- Publication number
- WO2004082337A1 WO2004082337A1 PCT/JP2004/003093 JP2004003093W WO2004082337A1 WO 2004082337 A1 WO2004082337 A1 WO 2004082337A1 JP 2004003093 W JP2004003093 W JP 2004003093W WO 2004082337 A1 WO2004082337 A1 WO 2004082337A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- display panel
- sealing plate
- solder
- sealing
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 31
- 230000008569 process Effects 0.000 title description 2
- 238000007789 sealing Methods 0.000 claims abstract description 120
- 229910000679 solder Inorganic materials 0.000 claims abstract description 85
- 230000002093 peripheral effect Effects 0.000 claims abstract description 36
- 238000004519 manufacturing process Methods 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims description 118
- 239000007769 metal material Substances 0.000 claims description 40
- 238000003466 welding Methods 0.000 claims description 28
- 229910052718 tin Inorganic materials 0.000 claims description 25
- 229910052719 titanium Inorganic materials 0.000 claims description 23
- 229910052738 indium Inorganic materials 0.000 claims description 21
- 229910052725 zinc Inorganic materials 0.000 claims description 21
- 238000005304 joining Methods 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 15
- 230000005496 eutectics Effects 0.000 claims description 14
- 238000009826 distribution Methods 0.000 claims description 13
- 239000011248 coating agent Substances 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 11
- 239000012298 atmosphere Substances 0.000 claims description 7
- 238000002844 melting Methods 0.000 claims description 7
- 230000008018 melting Effects 0.000 claims description 5
- 229910052797 bismuth Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052745 lead Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
- 239000011521 glass Substances 0.000 abstract description 19
- 239000002585 base Substances 0.000 abstract description 5
- 239000003513 alkali Substances 0.000 abstract description 3
- 238000000605 extraction Methods 0.000 abstract description 2
- 230000000994 depressogenic effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 34
- 239000010408 film Substances 0.000 description 16
- 239000000203 mixture Substances 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 239000012790 adhesive layer Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000035699 permeability Effects 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 229910002056 binary alloy Inorganic materials 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000007711 solidification Methods 0.000 description 3
- 230000008023 solidification Effects 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- NPMDZXVUGYSEMH-UHFFFAOYSA-N 4-(2h-triazol-4-yl)oxadiazole Chemical compound C1=NNN=C1C1=CON=N1 NPMDZXVUGYSEMH-UHFFFAOYSA-N 0.000 description 1
- 229910017944 Ag—Cu Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910020836 Sn-Ag Inorganic materials 0.000 description 1
- 229910020888 Sn-Cu Inorganic materials 0.000 description 1
- 229910020988 Sn—Ag Inorganic materials 0.000 description 1
- 229910019204 Sn—Cu Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- GVGUFUZHNYFZLC-UHFFFAOYSA-N dodecyl benzenesulfonate;sodium Chemical compound [Na].CCCCCCCCCCCCOS(=O)(=O)C1=CC=CC=C1 GVGUFUZHNYFZLC-UHFFFAOYSA-N 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 229940080264 sodium dodecylbenzenesulfonate Drugs 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
- H05B33/04—Sealing arrangements, e.g. against humidity
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8423—Metallic sealing arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
- H10K59/8721—Metallic sealing arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
- H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
Definitions
- the present invention relates to a display panel and a method for manufacturing the same.
- an EL element as an EL display panel selects the light emitting layer by selectively applying a voltage to the opposing electrode and the back electrode via the light emitting layer.
- the flash type can be used for flash display, and the passive type suitable for matrix display and the high-speed switching function can be used for high-speed switching display. Two types are known, namely the tibe type.
- the passive type EL element has a simple matrix structure, includes a substrate, an electrode disposed on the substrate, and a light emitting layer, and is an EL laminate stacked on an upper surface of the electrode. And a back electrode laminated on the upper surface of the EL laminate, and a concave central portion so as to define a peripheral ridge on the top surface of the substrate on which the EL laminate is laminated as a peripheral portion. And a glass sealing plate bonded to the substrate through a sealing portion on the top surface of the peripheral ridge.
- the above-mentioned active EL element has an active matrix structure, and like the structure of a TFT liquid crystal element, a substrate and a thin film transistor formed for each pixel on the substrate.
- An EL multilayer body including a transistor circuit or a diode and a light emitting layer, stacked on the upper surface of the thin film transistor circuit or the diode, and a substrate on which the EL multilayer body is stacked
- a glass sealing plate whose central part is concave so that the peripheral ridge to which the top surface is adhered is defined as the peripheral part Become a character.
- the top-emitting three-type EL element is configured such that a portion from the light-emitting layer to the sealing plate side is formed of a transparent member. Thus, light from the light emitting layer is extracted from the sealing plate side.
- the sealing property of the sealing plate is reduced, and water or the like is mixed in the EL devices, and as a result, the EL laminated film may be deteriorated.
- the inside of the EL element must be shielded from moisture and oxygen, and the substrate and the sealing plate are bonded to each other at the sealing portion between the substrate and the peripheral ridge of the sealing plate. It is adhered via an adhesive layer made of an agent.
- a resin, a low-melting glass, or the like is generally used. (For example, Tokugi 2002-2 3 1 4 4 2 public announcement).
- EL elements as EL display panels use resin as a material of an adhesive layer disposed at a sealing portion between a substrate and a peripheral ridge of a sealing plate.
- resin a material of an adhesive layer disposed at a sealing portion between a substrate and a peripheral ridge of a sealing plate.
- an adhesive made of a resin moisture penetrates into the EL element through the resin because the resin has moisture permeability, so that the characteristics of the EL element, particularly the organic EL element, are deteriorated.
- the weather resistance is reduced.
- a low-melting glass is used as the material of the adhesive layer, the temperature of the EL element becomes high during the bonding process, so that the characteristics of the EL element, particularly the organic EL element, are deteriorated.
- the substrate is warped.
- the substrate and the sealing plate are sealed and joined via the welding layer made of a metal material, it is possible to prevent the display panel from being exposed to a high temperature during manufacturing.
- the airtightness of the concave portion of the sealing plate is improved, the moisture permeability of the concave portion is reduced, and the weather resistance of the display panel can be improved.
- said metallic material is at least one material selected from the group consisting of Sn, Cu, In, Bi, Zn, Pb, Sb, Ga, and Ag. Consisting of hangs.
- the solder further comprises at least one material selected from the group consisting of Ti, A1, and Cr.
- the solder further includes at least one material selected from the group consisting of T i, A 1, and C r, so that the solder layer and the glass component of the substrate are combined with each other. It can improve the adhesiveness of the steel.
- the metal material has a eutectic point temperature or a melting point of 250 ° C. or lower.
- the solder substantially consists of In and Sn, and has a liquidus temperature of 150 or less.
- the solder is substantially composed of In and Sn and has a liquidus temperature of 150 or less, so that the adhesion to the substrate is further improved, and It is possible to achieve sealing bonding at a low temperature.
- the solder consists essentially of In and Sn, wherein the weight distribution of In / (In + Sn) is in the range of 50-65%, and The liquidus temperature is 125 ° C or less.
- the solder is substantially composed of In and Sn, the weight distribution ratio of I / (In + Sn) is in the range of 50 to 65%, and Since the phase line temperature is 125 or lower, the adhesion to the substrate is further improved, and the microstructure after solidification is fine and rich in flexibility, has excellent mechanical properties, and is sealed at a lower temperature. Can be realized.
- the solder is substantially composed of In, Sn, Zn, and Ti, and the weight distribution ratio of In / (In + Sn) is 50 to 65. %, Zn is 0, 1 to 7.0%, Ti is 0.001 to 0.1%, and the liquidus temperature is 150 ° C. or less.
- the binder is substantially composed of In, Sn, and Zn, and the weight distribution ratio of InZ (In + Sn) is in the range of 50 to 65%. Since Zn is 0.1 to 7.0%, Ti is 0.0001 to 0.1%, and the liquidus temperature is 150 ° C or lower, the adhesiveness to the substrate is improved. And the coexistence of Ti and Zn allows Ti to be contained more uniformly, thereby reducing the weather resistance at the interface between the hang and the substrate. Can be improved.
- the solder substantially consists of In, Sn, Zn, and Ti, and the weight distribution of InZ (In + Sn) is 50 to 65%.
- Z n is 0. Up to 5.0%, T i is 0.001 to 0.05%, and the liquidus temperature is 125 or less.
- the solder is substantially composed of I ⁇ , Sn, Zn, and Ti, and the weight distribution ratio of I (In + Sn) is in the range of 50-65696.
- Zn is 0.1 to 5.0%
- Ti is 0.0000 :! ⁇ 0.05% and the liquidus temperature is 125 or lower, so that the adhesion to the substrate can be further improved and the coexistence of Ti and Zn can be achieved. Therefore, Ti can be more uniformly contained, and the weather resistance at the interface between the hang and the substrate can be further improved.
- the display panel is an organic EL display panel.
- a method for manufacturing a display panel comprising: a substrate; and a sealing plate sealingly bonded to the substrate.
- a method for manufacturing a display panel comprising: sealingly joining the sealing plate to the sealing plate by a friction joining method using a molten metal material.
- the substrate and the sealing plate are sealed and joined by the friction joining method using the molten metal material, so that the adhesion of the metal material to the substrate is improved. It is possible to realize the sealed bonding that has been performed.
- a method for manufacturing a display panel comprising: a substrate; and a sealing plate sealingly joined to the substrate.
- a molten metal material is applied to at least one of the outer peripheral green portions on one main surface of the substrate and one main surface of the sealing plate, Since the main surface and one main surface of the sealing plate are aligned with each other, and the applied metal material is welded, the substrate and the sealing plate are sealed and joined.
- the metal material can be applied in a desired width and thickness, and the weather resistance of the display panel can be further improved.
- the applying step activates an interface between at least one of an outer peripheral portion of one main surface of the substrate and one main surface of the sealing plate and the molten metal material.
- the metal material is applied.
- the metal material is applied by activating the interface between at least one of the outer peripheral edges of the one main surface of the substrate and the one main surface of the sealing plate and the molten metal material. Strength between the metal and the metal material or between the sealing plate and the metal material can be improved.
- At least one of the applying step and the sealing joining step is performed in an inert atmosphere.
- FIG. 1 is a cross-sectional view of an EL display panel as a display panel according to an embodiment of the present invention.
- FIG. 2 is a cross-sectional view of a welding device for welding the substrate and the peripheral projection of the sealing plate in FIG.
- FIG. 3 is a view showing a modification of the introduction plate in FIG.
- FIGS. 4A, 4B, and 4C are partial cross-sectional views showing a modification of the organic EL element shown in FIG. 1.
- FIG. 4A shows a stepped portion on the outer periphery of the substrate and the sealing plate.
- Fig. 4B shows the case where beveling was applied to the outer periphery of the board and the sealing plate
- Fig. 4C shows the outer frame using solder on the outer periphery of the board and the sealing plate.
- FIG. 4 is a diagram showing a case where the welding is performed.
- 5A, 5B, and 5C are views used to explain a modification of the method of manufacturing the display panel according to the embodiment of the present invention.
- FIG. 6 is a view used to explain a modification of the method of manufacturing the display panel according to the embodiment of the present invention.
- FIG. 1 is a cross-sectional view of an EL display panel as a display panel according to an embodiment of the present invention.
- the top emission type organic EL element 100 as an EL display panel has a passive structure, a size of 7.0 cm square and a thickness of 1.0 mm.
- the sealing plate 30 is processed from a plate-shaped transparent glass substrate made of transparent non-alkali glass having a size of 5.0 ⁇ 111 square and a thickness of 1.1 mm, and has a concave central portion on the surface.
- a peripheral ridge 31 having a width of 2. O mm is formed at the periphery of the central recess 32, and the bottom has a thickness of 0.8 mm.
- the concave portions 32 of the sealing plate 30 are formed by forming the glass plate into a concave shape by a later described etching method.
- the etching depth of the glass base plate etched by this wet etching method was 300 m when measured.
- the concave portion 32 had a curved portion at the bottom corner, and the radius of curvature was about 300 m.
- the thickness of the bottom of the recess 32 of the sealing plate 30 is preferably 0.3 to 1.1 mm. When the thickness is less than 0.3 mm, the strength of the sealing plate 30 is insufficient, and when the thickness is 1.1 mm, the strength of the sealing plate 30 is sufficiently obtained.
- the masked glass plate is masked with an acid-resistant tape, that is, a resist so that a 4.5 cm square central portion of the glass plate is exposed, and then the masked glass plate is removed.
- an acid-resistant tape that is, a resist so that a 4.5 cm square central portion of the glass plate is exposed.
- it is made of a mixture of 20% by mass of hydrofluoric acid and 1% by mass of sodium dodecylbenzenesulfonate, and is immersed in an etching solution kept at 25 ° C.
- the organic EL laminate 20 includes a conductive film 21 formed of an ITO film having a thickness of 300 nm and a light-emitting layer described later, which is formed on the substrate 10, and is laminated on the upper surface of the conductive film 21.
- the upper transparent electrode 23 formed of an ITO film having a thickness of 500 nm, which is formed on the upper surface of the organic EL laminated film 22 and the organic EL laminated film 22, and the upper transparent electrode 23.
- an extraction electrode 24 made of an ITO film having a thickness of 300 nm.
- the organic EL laminated film 22 is composed of a tri-phenyldiamine-having hole-transporting layer having a height of 7 O n ⁇ 3 ⁇ 4 disposed on the conductive film 21 side, and a quinoline formed on the upper surface of the hole-transporting layer.
- a transparent electron transport layer made of triazolyloxadiazole may be further disposed between the upper transparent electrode 23 and the light emitting layer.
- the substrate 10 and the peripheral protruding portion 31 of the sealing plate 30 are connected to each other by a device shown in FIG. 2 to be described later via a welding layer 40 made of solder disposed in a sealing portion formed therebetween. Sealed and joined. Specifically, after disposing the sealing plate 30 at a predetermined position with respect to the substrate 10, the composition becomes 91.2 Sn -8.8 Zn (eutectic point temperature: 1980 C) The peripheral ridge 31 of the sealing plate 30 is welded to the tomb plate 10 using the molten solder a.
- FIG. 2 is a cross-sectional view of a welding device that performs the method of manufacturing a display panel according to the embodiment of the present invention.
- the welding apparatus A is provided between the substrate 10 and the sealing plate 30 in FIG. It is configured as follows so as to perform sealing joining with the peripheral projection 31. That is, the welding device A is a high-level substrate of the organic EL element 100 via the mounting table 50. It has a stepped platen 52 that holds the supply tower 51 in the lower part while holding the 10 and the sealing plate 30. At the bottom of the stepped platen 52, two rail members 53 are arranged along the organic EL display panel 100, and the supply tower 51 moves on the rail member 53. It is placed on 5 4. .
- the supply tower 51 has a rectangular cross-section crucible 55 for storing liquid or solid phase solder a, a crucible 55 built in the side wall of the crucible 55, and a crucible 55 stored in the crucible 55.
- An electric heating heater 56 for heating the solder a and a bottom portion of the crucible portion 55 and a sealing portion (a gap portion 5 7) of the substrate 10 of the organic EL element 100 and the sealing plate 30.
- an introduction section 58 having an elongated cross section, and an introduction plate 59 arranged horizontally in the middle of the introduction section 58.
- the introduction plate 59 extends from the introduction portion 58 and fits into the gap portion 57, whereby the solder a enters the gap portion 57 together with the surface tension.
- the gravitational force of the solder a at the liquid level ⁇ H in the crucible part 55 is applied to the hang a at the position of the introduction plate 59, whereby the solder a enters the gap part 57 of the solder a. Promote intrusion.
- the moving mechanism 54 moves at a constant speed on the rail member 53 along the gap 57.
- the solder a moves through the introduction portion 58 to the gap portion 5.
- the insert plate 59 has two corrugated sections along the gap 57.
- the corrugated portion 60 slides on the top surface of the protruding portion 31 around the sealing plate 30, and the valley slides on the substrate 10. Thereby, the adhesion of the solder a to the substrate 10 is further improved, Sealed joining by the friction joining method can be realized.
- the substrate 10 and the peripheral ridge portion 31 of the sealing plate 30 are sealed and joined via the welding layer 40 composed of the hang a.
- the airtightness of the concave portion 32 is improved, and the moisture permeability of the concave portion 32 is reduced, so that the weather resistance of the organic EL element 100 can be improved.
- the sealing plate 30 can be welded to the substrate 10 without increasing the temperature of the organic EL element 100, the organic EL element 100 may be deteriorated due to heat at the time of welding. It is possible to prevent the substrate 10 from warping due to heat.
- the substrate 10 and the sealing plate 30 are sealed and joined by the friction welding method using the molten solder a, so that the adhesion of the solder a to the substrate 10 is reduced. Improved sealing bonding can be realized.
- the welding layer 40 is formed by using the welding apparatus A, but is not limited thereto, and may be formed by anodic bonding, bonding using ultrasonic waves, multi-step bonding, pressure bonding, or the like. It may be formed using a joining method.
- the substrate 10 and the peripheral ridges 31 of the sealing plate 30 are sealed and joined by the welding layer 40 made of solder a, but the present invention is not limited to this.
- the outer peripheral edges of the substrate 10 and the sealing plate 30 may be stepped (FIG. 4A) or beveled.
- the substrate 10 and the sealing plate 30 may be formed on the outer periphery of the substrate 10 and the sealing plate 30 as shown in FIG. 4C.
- the substrate I 0 and the sealing plate 30 may be sealed to each other by welding the outer frame 70 to the outer peripheral edge thereof using a welding layer 40 made of solder a.
- a modified example of the method for manufacturing a display panel according to the embodiment of the present invention is as follows. Then, a sealing plate 30 having the same shape and the same size as the substrate 10 is prepared, and then, as shown in FIG. 6, the substrate 10 is placed in an inert atmosphere such as N 2 or Ar. Using a dispenser 90 with an inner diameter of 1.5 mm and an outer diameter of 2.0 mm at the tip of the tubular injection port 91 at the outer peripheral edge of one main surface, By sliding the tip on one main surface of the substrate 10, the interface between the substrate 10 and the solder a is activated by friction, and the molten solder a is applied linearly and solidified.
- a solder portion 81 is formed directly on the entire outer peripheral edge of the substrate 10 (FIG. 5C), and a solder plate 81 is formed on one main surface of the sealing plate 30.
- a dispenser 90 the interface between the sealing plate 30 and the solder a is activated by friction on the outer peripheral portion, and the molten solder a is linearly applied and solidified.
- a solder portion 82 is formed over the entire outer peripheral portion of the "0".
- the dispenser 90 is the amount of the solder a injected from the dispenser 90, the friction width at the interface between the substrate 10 and the solder a, that is, the outer diameter of the injection port 91, and the feed speed of the dispenser 90.
- the method further includes aligning one main surface of the substrate 10 on which the solder portion 81 is formed and one main surface of the sealing plate 30 on which the solder portion 82 is formed (alignment). (FIG. 5B). Further, the substrate 10 and the sealing plate 30 are placed near an eutectic point of solder a in an inert atmosphere such as N 2 or Ar, for example.
- solder portion 81 and the solder portion 82 are fused together to form a welded layer 83 (FIG. 5C), and the substrate 10 and the sealing plate are interposed via the welded layer 83.
- the substrate 10 and the sealing plate 30 are sealed and joined by welding 30 and. (Sealing joint step) o
- molten solder a is applied to the outer peripheral edge of one main surface of substrate 10, and is further melted to the outer peripheral edge of one main surface of sealing plate 30.
- the solder a is applied, the one main surface of the substrate 10 and the one main surface of the sealing plate 30 are aligned with each other, and the solder portion 81 and the hang portion 82 are welded to each other. Since the sealing member 10 and the sealing plate 30 are bonded together, the solder portions 81 and the solder portions 82 can have desired widths and thicknesses. The weather resistance can be further improved.
- the substrate 10 and the solder a and the interface between the sealing plate 30 and the hang a are activated and the molten solder a is applied, the substrate 10 and the solder a And the adhesive strength between the sealing plate 30 and the hang a can be improved.
- At least one of the coating and the sealing is performed in an inert atmosphere such as N 2 or Ar, and the oxide on the surface of the solder portion 81 and the solder portion 82 is formed. Can be suppressed.
- the tip of the dispenser 90 is slid on one main surface of the substrate 10 to activate the interface between the substrate 10 and the solder a by friction to melt.
- the solder a was applied, the present invention is not limited to this.
- the solder a is applied to the T solder a using a vibration generator (not shown) which is connected to the dispenser 90 and generates minute vibration.
- the interface between one main surface of substrate 10 and solder a may be activated, and solder a may be applied to one main surface of substrate 10.
- molten solder a is applied to the outer peripheral edge of one main surface of substrate 10 and solidified, and the outer peripheral edge of one main surface of sealing plate 30 is further reduced.
- the melted solder a was applied to the part and solidified by coating, but not limited to this, but it was applied to one main surface of the substrate 10 and one raw surface of the sealing plate 30.
- the molten solder a may be applied to at least one of the outer peripheral edges to be solidified. Specifically, when the hang a is applied only to the outer periphery of the one main surface of the substrate 10, vibration is applied to the sealing plate 30 by using a vibration generator (not shown).
- the interface between one of the main surfaces of the sealing plate 30 and the solder portion 81 is activated, and one of the main surface of the substrate 10 on which the solder portion 81 is formed and the one of the sealing plate 30 are formed.
- the surfaces may be aligned with each other.
- vibration is applied to the substrate 10 using a vibration generator (not shown).
- the interface between one main surface of the substrate 10 and the solder portion 82 is activated, and one main surface of the sealing plate 30 on which the hang portion 82 is formed and one raw surface of the substrate 10 are formed. May be combined with each other.
- solder a having a temperature of 91.2 Sn-8.8 Zn (eutectic point temperature: 198 ° C.) is used.
- the present invention is not limited to this.
- a solder having a eutectic point temperature or a melting point of 250 or less may be used.
- the metal material may further include at least one material selected from the group consisting of Ti, Al, and Cr. Thereby, the adhesion between the welding layer 40 and the glass component of the substrate 10 can be improved.
- the solder is substantially composed of In and Sn, and has a liquidus temperature of 150 ° C or lower.
- the adhesion to the substrate 10 can be further improved, and the sealing bonding at a low temperature can be realized.
- the solder consists essentially of In and Sn, where In / (In + Sn) is in the range of 50 to 65%, and the liquidus temperature is less than 125 Is more preferable. This further improves the adhesiveness to the substrate 10 and improves the adhesion.
- the solidified structure is fine, rich in flexibility, excellent in mechanical properties, and can achieve sealed bonding at a lower temperature.
- the cylinder is substantially composed of In, Sn ⁇ Zn, and Ti, and the weight distribution ratio of In / (In + Sn) is in the range of 50 to 65%.
- Z n force? 7.0%
- T i is preferably 0.001% to 0.1%
- the liquidus temperature is preferably 150 ° C. or less. More preferably 0.1 to 5.0%
- T i is 0.001 to 0.05% and the liquidus temperature is 125 or less.
- T i When T i is less than the above range, the adhesion to the substrate 10 is not improved, while when T i is more than the above range, the liquidus temperature of the solder increases. This increases the temperature required for bonding, which is inconvenient. In particular, in the molten state of the solder, the compound of Ti and other components precipitates and is not preferable.
- the solder is closer to the eutectic composition of the In-Sn binary system of In 52% and Sn 48%, especially the In-Sn binary system.
- the solder composed of the eutectic composition of In 52% and Sn 48% (at the eutectic temperature of 117) has a very fine structure after solidification, and has high flexibility. Preferred because of its excellent mechanical properties.
- the eutectic composition of the binary system In—Sn is In 52%
- a hang composed of Sn 48% (eutectic temperature 1 17 ° C) with Zn and Ti added, for example, In 51%, Sn 47%, Zn 2.0 %, T i 0.002% hangs are preferred.
- the adhesiveness to the substrate 10 is extremely good, and the weather resistance at the interface between the solder and the substrate 10 is also extremely good.
- solder examples include Sn-Ag, Sn-Cu, Sn-Ag-Cu, Sn-Ag-Bi, and Sn-A.
- a solder of g-Cu-Bi system or the like having a eutectic point of 250 ° C or less may be used. .
- the method of forming the recesses 32 in the glass base plate uses the wet etching method.
- the dry etching method may be used, and the dry etching method and the wet etching method may be used.
- alkali-free glass is used as the material of the sealing plate 30.
- a low alkali glass or an alkaline elution after etching is performed. Soda lime glass or quartz glass that has been subjected to a prevention treatment can be used.
- a metal material may be used as the material of the sealing plate 30, and Al, Cu, and Fe are preferably used as the metal material.
- SUS, ceramic, Pt, or Au may be used.
- the shape of the sealing plate 30 is not limited to the shape shown in FIG. 1, but is formed by the substrate 10 and the welding layer 40 in order to protect the organic EL laminate 20. Any material can be used as long as it can be sealed.
- the organic EL laminated film 22 has a passive structure. However, the organic EL laminated film 22 may have an active structure. Further, in the present embodiment, organic EL element 100 has a top emission structure, but may have a bottom emission structure. Further, the EL laminated film may be an inorganic EL laminated film instead of the organic EL laminated film 22. In this case, a layer composed of an insulating layer, a light emitting layer, and an insulating layer, and a layer composed of an electron barrier layer, a light emitting layer, and a current limiting layer are used in this order from the transparent conductive film side.
- the organic EL element 100 is used as the EL display panel.
- the present invention is not limited to this, and a display panel such as a CRT or PDP may be used. . Industrial applicability
- the substrate and the sealing plate are sealed and joined via the welding layer made of a metal material, it is possible to prevent the display panel from being exposed to a high temperature during manufacturing.
- the airtightness of the concave portion of the sealing plate is improved, and the moisture permeability of the concave portion is reduced, so that the weather resistance of the display panel can be improved.
- the binder further includes at least one material selected from the group consisting of Ti, Al, and Cr, so that the welding layer and the substrate Adhesion with glass components can be improved.
- the eutectic point temperature or melting point of the metal material is 250 ° C. or less, deterioration of the display panel due to heat during welding and warpage of the substrate due to heat are prevented. It can be prevented reliably.
- the solder is substantially composed of In and Sn, and has a liquidus temperature of 150C or less, so that the adhesion to the substrate is further improved, In addition, sealing bonding at a low temperature can be realized.
- the solder is substantially composed of In and Sn, and the weight distribution ratio of In / (In + Sn) is in the range of 50 to 65%.
- the liquidus temperature is below 125 at 125, further improving the adhesion to the substrate.
- the structure after solidification is fine and rich in flexibility, excellent in mechanical properties, and it is possible to realize sealing bonding at a lower temperature.
- the hang substantially consists of In, Sn, Zn, and Ti, and the weight distribution ratio of In / (In + Sn) is 50 to 65. %, Zn is 0.1 to 7.0%, T i is 0.001 to 0.1%, and the liquidus temperature is 150 or less.
- the adhesion can be further improved, and the coexistence of Ti and Zn allows Ti to be contained more homogeneously, and thus the interface between the hang and the substrate. It can improve the weather resistance of the steel. .
- the binder is substantially composed of In, Sn, Zn, and Ti, and the weight distribution ratio of In / (In + Sn) is 50 to 6. 5%, where Zn is 0.;! To 5.0%, Ti is 0.00001 to 0.05%, and the liquidus temperature is 125 ° C or lower. Therefore, the adhesion to the substrate can be further improved, and the coexistence of Ti and Zn can make Ti more homogeneously contained. Thus, the weather resistance at the interface between the solder and the substrate can be further improved.
- the substrate and the sealing plate are sealed and joined by a friction joining method using a molten metal material.
- a molten metal material is applied to at least one of the outer peripheral edges of one main surface of the substrate and one main surface of the sealing plate.
- the substrate and the sealing plate are sealed and joined by aligning the main surface of the substrate and one main surface of the sealing plate with each other and welding the applied metal material. It can be applied in a thickness, which can further improve the weather resistance of the display panel.
- the adhesive strength between the substrate and the metal material or sealing is achieved.
- the bonding strength between the plate and the metal material can be improved.
- At least one of the coating and the sealing is performed in an inert atmosphere, so that the generation of oxide on the surface of the metal material is suppressed. It can be.
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0518956A GB2416320A (en) | 2003-03-10 | 2004-03-10 | Display panel and process for producing the same |
US11/222,568 US20060061271A1 (en) | 2003-03-10 | 2005-09-09 | Display panel and method of manufacturing the same |
Applications Claiming Priority (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003063220 | 2003-03-10 | ||
JP2003-063220 | 2003-03-10 | ||
JP2003317114 | 2003-09-09 | ||
JP2003-317114 | 2003-09-09 | ||
JP2003-328805 | 2003-09-19 | ||
JP2003328805 | 2003-09-19 | ||
JP2003-422679 | 2003-12-19 | ||
JP2003422679A JP2005116497A (ja) | 2003-03-10 | 2003-12-19 | 表示パネル及びその製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/222,568 Continuation US20060061271A1 (en) | 2003-03-10 | 2005-09-09 | Display panel and method of manufacturing the same |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2004082337A1 true WO2004082337A1 (ja) | 2004-09-23 |
Family
ID=32996198
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2004/003093 WO2004082337A1 (ja) | 2003-03-10 | 2004-03-10 | 表示パネル及びその製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20060061271A1 (ja) |
JP (1) | JP2005116497A (ja) |
KR (1) | KR20050104423A (ja) |
GB (1) | GB2416320A (ja) |
TW (1) | TW200501808A (ja) |
WO (1) | WO2004082337A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7659659B2 (en) | 2003-06-04 | 2010-02-09 | Idemitsu Kosan Co., Ltd. | Organic electroluminescent device and display using same |
WO2018003865A1 (ja) * | 2016-06-28 | 2018-01-04 | 京セラ株式会社 | 封止体、太陽電池モジュールおよび封止体の製造方法 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007250455A (ja) * | 2006-03-17 | 2007-09-27 | Hitachi Displays Ltd | 画像表示装置 |
JP4816357B2 (ja) * | 2006-09-19 | 2011-11-16 | コニカミノルタホールディングス株式会社 | 有機エレクトロルミネッセンスパネル、有機エレクトロルミネッセンスパネルの製造方法 |
JP2008089634A (ja) * | 2006-09-29 | 2008-04-17 | Seiko Epson Corp | 電気光学装置及び電子機器 |
DE102013110174A1 (de) * | 2013-09-16 | 2015-03-19 | Osram Oled Gmbh | Elektronisches Bauelement und Verfahren zur Herstellung eines elektronischen Bauelements |
US10243165B2 (en) * | 2014-11-28 | 2019-03-26 | Pioneer Corporation | Light-emitting device |
JP6833385B2 (ja) * | 2016-07-29 | 2021-02-24 | エルジー ディスプレイ カンパニー リミテッド | 表示装置の製造方法および製造装置 |
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-
2004
- 2004-03-10 KR KR1020057016942A patent/KR20050104423A/ko not_active Application Discontinuation
- 2004-03-10 WO PCT/JP2004/003093 patent/WO2004082337A1/ja active Application Filing
- 2004-03-10 TW TW093106312A patent/TW200501808A/zh unknown
- 2004-03-10 GB GB0518956A patent/GB2416320A/en not_active Withdrawn
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- 2005-09-09 US US11/222,568 patent/US20060061271A1/en not_active Abandoned
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JPH07227690A (ja) * | 1994-02-21 | 1995-08-29 | Asahi Glass Co Ltd | はんだ合金及びターゲット構造体 |
JPH10125463A (ja) * | 1995-12-28 | 1998-05-15 | Matsushita Electric Ind Co Ltd | 有機エレクトロルミネセンス素子、液晶照明装置、表示デバイス装置、および、有機エレクトロルミネセンス素子の製造方法 |
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WO2018003865A1 (ja) * | 2016-06-28 | 2018-01-04 | 京セラ株式会社 | 封止体、太陽電池モジュールおよび封止体の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20050104423A (ko) | 2005-11-02 |
GB2416320A (en) | 2006-01-25 |
JP2005116497A (ja) | 2005-04-28 |
US20060061271A1 (en) | 2006-03-23 |
TW200501808A (en) | 2005-01-01 |
GB0518956D0 (en) | 2005-10-26 |
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