WO2004064141A1 - 電子部品等の接合方法、およびそれに用いる接合装置 - Google Patents
電子部品等の接合方法、およびそれに用いる接合装置 Download PDFInfo
- Publication number
- WO2004064141A1 WO2004064141A1 PCT/JP2003/000293 JP0300293W WO2004064141A1 WO 2004064141 A1 WO2004064141 A1 WO 2004064141A1 JP 0300293 W JP0300293 W JP 0300293W WO 2004064141 A1 WO2004064141 A1 WO 2004064141A1
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- WIPO (PCT)
- Prior art keywords
- bonding
- joining
- ultrasonic vibration
- load
- chip
- Prior art date
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/10—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating making use of vibrations, e.g. ultrasonic welding
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- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05568—Disposition the whole external layer protruding from the surface
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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- H01L2224/05573—Single external layer
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
- H01L2224/1133—Manufacturing methods by local deposition of the material of the bump connector in solid form
- H01L2224/1134—Stud bumping, i.e. using a wire-bonding apparatus
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/7525—Means for applying energy, e.g. heating means
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- H01L2224/75343—Means for applying energy, e.g. heating means by means of pressure by ultrasonic vibrations
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- H01L2224/757—Means for aligning
- H01L2224/75743—Suction holding means
- H01L2224/75744—Suction holding means in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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- H01L2224/757—Means for aligning
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- H01L2224/75745—Suction holding means in the upper part of the bonding apparatus, e.g. in the bonding head
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- H01L2224/818—Bonding techniques
- H01L2224/81801—Soldering or alloying
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- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00013—Fully indexed content
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Definitions
- the present invention relates to a joining method and a joining apparatus for joining two different joining objects (for example, electronic components and circuit boards) having a joining portion made of a conductor while applying ultrasonic vibration.
- the size of the bonding pad of a high-density mounted semiconductor integrated circuit is about 1 ⁇ 0 ⁇ or less, and the distance between adjacent pads is about 20 Aim or less. Therefore, in the conventional solder bonding, there is a high possibility that the solder of the adjacent bonding portion is melted and integrated and short-circuited, so that the demand for high-density mounting cannot be met.
- a joining method using ultrasonic energy has been adopted.
- this bonding method for example, gold bumps are formed on each bonding pad of a semiconductor chip, and ultrasonic vibration is applied while pressing the gold bumps on the corresponding bonding pads of the substrate.
- Such a bonding method is disclosed in, for example, JP-A-5-136205, JP-A-7-115009, and JP-A-2000-650. It is disclosed in the gazette.
- FIG. 3 is an overall view of the stage where the IC chip and the circuit board are brought into contact.
- Figs. 4 (a) to (c) are enlarged cross-sectional views showing the bonding interface between the IC chip and the circuit board. It is.
- an IC chip 100 and a circuit board 110 are joined using ultrasonic vibration.
- the IC chip 100 has a bonding pad 101, and a gold bump 102 is formed on the bonding pad 101.
- Circuit board 1 1 0 It has a bonding pad 111 corresponding to the bonding pad 101 of the C chip 100.
- the bump 102 is brought into contact with the bonding pad 111, and then the IC chip 100 is applied with a load f applied.
- Ultrasonic vibration is supplied to one or both of the circuit boards 110.
- FIG. 4A is an enlarged cross-sectional view of the interface between each bump 102 and the corresponding bonding pad 111 just after the load f is applied.
- Both the bonding target surface 102 a of the bump 102 crushed by the application of the load f and the bonding target surface 111 a of the bonding pad 111 have fine irregularities. Therefore, the surface to be welded 102a and the surface to be welded 111a are microscopically only point-contacted at a plurality of locations.
- reference numeral 120 indicates that the surface 102a to be bonded of the bump 102 is in contact with the surface 111a to be bonded of the bonding pad 111, but is still in contact A portion that has not been joined (a non-joined contact portion) is shown, and reference numeral 130 denotes a gap generated between the surfaces to be joined 102a and 111a.
- the ultrasonic vibration is applied only in a direction orthogonal to the direction of the load f. Therefore, the energy transmitted in the direction parallel to the direction of the load is relatively small, and the depth at which plastic flow occurs is small. Therefore, if the amount of movement due to plastic flow is small and the application time of the ultrasonic vibration is not sufficiently long, voids and uncompleted portions remain at the interface between the bump and the bonding pad, and there is a high possibility that bonding failure will occur. In order to avoid the above problems, it is conceivable to increase the load f itself or the application time (joining time) of the load f.
- the amount of crushing deformation of the bump 102 is increased, and the distance between the adjacent bumps 102 is increased. If the distance between the bumps is small (the mounting density is high), the bumps 102 may come into contact with each other. Further, there is a possibility that the IC chip 100 or the circuit board 110 may be damaged due to the increase in the load f itself or the application time of the load f. Disclosure of the invention
- an object of the present invention is to provide a joining method and a joining apparatus which are excellent in working efficiency and joining reliability by reducing joining defective portions in a shorter time and more reliably. .
- a first joining object having a first joining portion made of a conductor, and a second joining object having a second joining portion made of a conductor there is provided a joining method for joining the second joining portion so as to be in contact with the joining surface.
- this bonding method ultrasonic vibration is applied to the first bonding object in a first direction intersecting the bonding surface, and at the same time, the ultrasonic vibration is applied to the second bonding object in the first direction.
- a second direction of sound wave vibration is applied.
- the first joining portion and the second joining portion can be joined more securely in a shorter time.
- a void formed at the interface between the first bonding portion and the second bonding portion is applied.
- the depth of the plastic flow generated at the interface increases.
- the ultrasonic vibration in the first direction also promotes the growth of adhesion nuclei, thereby shortening the time required for bonding. Therefore, the time for applying the load applied to the joining object is shortened, and the damage to the joining object is reduced.
- the first direction is orthogonal to the bonding surface
- the second direction is parallel to the bonding surface
- the first joint or the second joint has a bump made of a conductor, The joining between the first joining object and the second joining object is performed via the bump.
- the bump is made of, for example, gold.
- the ultrasonic vibration in the first direction and the ultrasonic vibration in the second direction may have the same frequency or different frequencies.
- the vibration frequency of the ultrasonic vibration in the first direction is 20 to 500 kHz
- the vibration frequency of the ultrasonic vibration in the second direction is 20 to 500 kHz. It is.
- the amplitude of the ultrasonic vibration in the first direction is 0.1 to 5 m
- the amplitude of the ultrasonic vibration in the second direction is 0.1 to 5 ⁇ .
- the application time of the first and second ultrasonic vibrations is 0.1 to 1 sec. If the application time is less than 0.1 sec, it is not possible to apply ultrasonic vibration energy sufficient to cause plastic flow at the interface, resulting in insufficient bonding. On the other hand, if the application time exceeds 1 sec, sufficient ultrasonic vibration energy is already applied to the interface to achieve good bonding, so that energy is wasted, which is not desirable.
- a first joining object having a first joining portion made of a conductor, and a second joining object having a second joining portion made of a conductor there is provided a bonding device for bonding so that the second bonding portion is in contact with a bonding surface.
- the bonding apparatus includes: first ultrasonic vibration applying means for applying ultrasonic vibration to the first bonding object in a first direction intersecting the bonding surface; On the other hand, there is provided second ultrasonic vibration applying means for applying ultrasonic vibration in a second direction crossing the first direction.
- FIG. 1 is a schematic configuration diagram of a joining device according to an embodiment of the present invention.
- FIGS. 2a to 2c are schematic diagrams showing a change state of an interface between an IC chip and a circuit board when the IC chip and the circuit board are joined by using the joining apparatus.
- Fig. 3 shows the state immediately before bonding the IC chip and the circuit board by the conventional bonding method. Is connected to the support tool 4 via an ultrasonic horn 80 so that ultrasonic vibration can be applied in a second direction parallel to the load direction f. The first direction and the second direction of the ultrasonic vibration with respect to both IC chips 1 and 2 by the ultrasonic oscillators 7 and 8 may be interchanged.
- a bump 9 is formed on each bonding pad 10 of the first IC chip 1 by using a conventional wire bonding method.
- the bump 9 is formed by sparking a gold wire (diameter 10-25 ⁇ ⁇ ) with a high voltage of 3000-500 OV to form a gold ball, and then ultrasonic vibration (vibration frequency: 60-: 110 kHz, amplitude : 0.3 to 0.6 im) for 0.005 to 0.004 seconds and a load of about 8 to 25 g per bump under heating at 200 to 300 ° C.
- the method for forming the bump 9 is not limited to the method using the wire bonding method, and the constituent material of the bump 9 is not limited to gold.
- the first IC chip 1 on which the bumps 9 are formed as described above is suction-fixed to the bonding tool 3 via the suction path 30. Further, the second IC chip 2 is suction-fixed to the support tool 4 via the suction path 40.
- the bonding tool 3 is moved in the direction parallel to the load direction f at a speed of 0.1 to 1 Omm sec. In the right direction (below Fig. 1). This downward movement is performed until the bump 9 formed on the first IC chip 1 contacts the bonding pad 20 of the second IC chip 2. Since a known mechanism is used as the movement mechanism of the bonding tool 2, it is not illustrated here.
- a pressing device 6 applies a load of 0.5 to 20 g per bump between the bump 9 and the bonding pad 20, which are bonding portions. This applied state of the load is maintained even when an ultrasonic vibration described later is applied.
- the first IC chip 1 and the second IC chip 2 are joined via the bumps 9.
- the ultrasonic vibration is applied to the first IC chip 1 by the first ultrasonic oscillator 7 via the ultrasonic horn 70 and the bonding tool 3 in the first direction orthogonal to the load direction f.
- an ultrasonic Ultrasonic vibration is applied to the second IC chip 2 via the pin 80 and the support tool 4 in the second direction parallel to the load direction f.
- the ultrasonic vibration applied to the first IC chip 1 has a frequency of 40 to 200 kHz and an amplitude of 0.1 to 5 ⁇ .
- the ultrasonic vibration applied to the 1C chip 2 has a frequency of 20 to 40 kHz and an amplitude of 0:!
- the application time of the ultrasonic vibration applied to both IC chips 1 and 2 is 0.1 to 1 sec, more preferably 0.2 to 0.6 sec.
- the IC chip 1 can be joined to the IC chip 2.
- both the bonding target surface 9a of the bump 9 crushed by the application of the load f and the bonding target surface 20a of the bonding pad 20 have fine irregularities. Have. Therefore, both surfaces 9a and 20a to be welded are microscopically only point-contact at a plurality of locations.
- ultrasonic vibrations are applied not only in the second direction orthogonal to the load f but also in the first direction parallel to the load f. Is remarkably fast. This is because the ultrasonic vibration in the first direction has a phase in which the surfaces 9a and 20a to be welded instantaneously approach each other, so that the gap 13 is crushed and the depth of the plastic flow increases. is there. As a result, as shown in FIG. 2c, the adhesion nucleus 14 grows in a short time, and the void 13 disappears. When joining is completed, both surfaces to be joined 9 a,
- defective bonding portions such as voids and unbonded contact portions generated at the interface can be more reliably reduced in a shorter time.
- a delicate bonding target such as a delicate IC chip is less likely to be damaged.
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Wire Bonding (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2003201895A AU2003201895A1 (en) | 2003-01-15 | 2003-01-15 | Jointing method for electronic components, and jointing device used for the method |
JP2004566271A JP4044559B2 (ja) | 2003-01-15 | 2003-01-15 | 電子部品等の接合方法、およびそれに用いる接合装置 |
PCT/JP2003/000293 WO2004064141A1 (ja) | 2003-01-15 | 2003-01-15 | 電子部品等の接合方法、およびそれに用いる接合装置 |
TW092100911A TWI223859B (en) | 2003-01-15 | 2003-01-16 | Method of bonding electronic component or the like, and bonding apparatus used therefor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2003/000293 WO2004064141A1 (ja) | 2003-01-15 | 2003-01-15 | 電子部品等の接合方法、およびそれに用いる接合装置 |
Publications (1)
Publication Number | Publication Date |
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WO2004064141A1 true WO2004064141A1 (ja) | 2004-07-29 |
Family
ID=32697380
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2003/000293 WO2004064141A1 (ja) | 2003-01-15 | 2003-01-15 | 電子部品等の接合方法、およびそれに用いる接合装置 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP4044559B2 (ja) |
AU (1) | AU2003201895A1 (ja) |
TW (1) | TWI223859B (ja) |
WO (1) | WO2004064141A1 (ja) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07115109A (ja) * | 1993-10-15 | 1995-05-02 | Nec Corp | フリップチップボンディング方法及び装置 |
JPH10178071A (ja) * | 1996-12-18 | 1998-06-30 | Sony Corp | チップボンディング装置及びチップボンディング方法 |
JPH11284028A (ja) * | 1998-03-27 | 1999-10-15 | Toshiba Corp | ボンディング方法及びその装置 |
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2003
- 2003-01-15 AU AU2003201895A patent/AU2003201895A1/en not_active Abandoned
- 2003-01-15 WO PCT/JP2003/000293 patent/WO2004064141A1/ja active Application Filing
- 2003-01-15 JP JP2004566271A patent/JP4044559B2/ja not_active Expired - Fee Related
- 2003-01-16 TW TW092100911A patent/TWI223859B/zh not_active IP Right Cessation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07115109A (ja) * | 1993-10-15 | 1995-05-02 | Nec Corp | フリップチップボンディング方法及び装置 |
JPH10178071A (ja) * | 1996-12-18 | 1998-06-30 | Sony Corp | チップボンディング装置及びチップボンディング方法 |
JPH11284028A (ja) * | 1998-03-27 | 1999-10-15 | Toshiba Corp | ボンディング方法及びその装置 |
Also Published As
Publication number | Publication date |
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JPWO2004064141A1 (ja) | 2006-05-18 |
JP4044559B2 (ja) | 2008-02-06 |
AU2003201895A1 (en) | 2004-08-10 |
TW200414388A (en) | 2004-08-01 |
TWI223859B (en) | 2004-11-11 |
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