TWI223859B - Method of bonding electronic component or the like, and bonding apparatus used therefor - Google Patents

Method of bonding electronic component or the like, and bonding apparatus used therefor Download PDF

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Publication number
TWI223859B
TWI223859B TW092100911A TW92100911A TWI223859B TW I223859 B TWI223859 B TW I223859B TW 092100911 A TW092100911 A TW 092100911A TW 92100911 A TW92100911 A TW 92100911A TW I223859 B TWI223859 B TW I223859B
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Taiwan
Prior art keywords
bonding
joint
ultrasonic vibration
joining
ultrasonic
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TW092100911A
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English (en)
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TW200414388A (en
Inventor
Hidehiko Kira
Kenji Kobae
Norio Kainuma
Hiroshi Kobayashi
Shuichi Takeuchi
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Fujitsu Ltd
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Publication of TW200414388A publication Critical patent/TW200414388A/zh
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Publication of TWI223859B publication Critical patent/TWI223859B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/10—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating making use of vibrations, e.g. ultrasonic welding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L2224/7525—Means for applying energy, e.g. heating means
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    • H01L2224/75354—Ultrasonic horns in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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    • H01L2224/757—Means for aligning
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    • H01L2224/75745—Suction holding means in the upper part of the bonding apparatus, e.g. in the bonding head
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    • H01L2924/14—Integrated circuits

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Wire Bonding (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)

Description

1223859 玖、發明說明 (發明說明應敘明：發明所屬之技術領域、先前技術、内容、實施方式及圖式簡單說明） 【發明戶斤屬之技術領域3 技術領域 本發明係有關於一種一面將超音波振動施予具有由導 5 體形成之接合部之2個接合對象物（例如電子零件或電路基 板），一面將該等對象物接合之接合方法及接合裝置。 【先前技術】 背景技術 φ 近年來，隨著對電子機器之高性能化及小型化等之要 10求，安裝於電子機器之電子零件之高密度封裝化乃急速發 展。舉例言之，經高密度安裝之半導體積體電路之接合焊 墊的尺寸為邊長l〇0/zm左右或以下之正方形，且相鄰焊 墊間之距離在20# m左右或以下。因此，在習知之焊接接 合中，由於相鄰之接合部之焊接熔融成一體化而短路之可 15能性高，故無法因應高密度封裝化之要求。 因此，為因應高密度封裝化之要求，採用了利用超音 鲁 波能源之接合方法。在此接合方法中，舉例言之，於半導 體晶片之各接合焊墊形成金凸塊，一面將該等金凸塊按^ - 於基板所對應之接合焊墊，_面施加超音波振動。此種# 2〇合方法揭示於諸如日本專利公開公報特開平卜 號、特開平7—115109號及特開2000-208560號。 、為更具體說明利用超音波振動之習知接合方法，參照 添附圖式之第3圖及第4a圖〜第4〇圖。第3圖係K晶片 與電路基板接觸之階段之全體圖，第4(a)圖〜第4((〇 6 1223859 玖、發明說明 圖為顯示ic晶片與電路基板間之接合界面之擴大截面圖。 如第3圖所示，利用超音波振動將1C晶片100與電路 基板110接合。1C晶片100具有接合焊墊101，並於該接 合墊片101形成有金凸塊102。電路基板110具有對應於 5 iC晶片100之接合焊墊1〇1的接合焊墊ui。當上述IC晶 片100與電路基板11〇接合時，不但使凸塊1〇2與接合焊 墊111接觸，且在施加重力f之狀態下，對IC晶片1〇〇與 電路基板110其中之一或兩者施加超音波振動。 第4a圖係施加重力f後之各凸塊1〇2與相對應之接合 10焊墊Π1之界面之擴大截面圖。因重力f之施加而受擠壓 之凸塊102之接合對象面102a與接合焊墊lu之接合對象 面111a皆具有細微之凹凸。因此，接合對象面l〇2a與接 合對象面111a在微觀上僅是在多處點接觸而已。 15 20
在此狀態下，當於與重力f垂直相交之方向施加超音 波振動時，如第4b圖所示，在當初點接觸之多處產生凝聚 核140 (為接合之原點之合金化部份），且該等;疑聚核 沿接合界面逐漸擴大。在第4b圖中，標號12()係表示凸塊 1〇2之接合對象面與接合焊塾lu之接合對象面心 有接觸，但尚未接合之部份（未接合接觸部份)，而標號 130係表示兩接合對象面102a、llla間所產生之空隙。 進-步，因隨著超音波振動產生之摩擦，金屬產幻 性流動，故如第4C圖所示’在界面中凝聚核14〇不斷成長 而使空隙130縮小或消失。藉此，當初未接合接觸部们2 達到接合。_，在空隙13G存在之部份並未達到接合 7 1223859 玖、發明說明 而使縮小之空隙130或未接合接觸部份12〇所剩之比例 高。此外，圖式上之虛線所示之部份顯示當初存在於凸塊 102或接合焊墊111之表面之氧化物的殘餘部份。 如此，在上述日本專利公報所揭示之技術中，超音波 5振動僅施加於相對於重力f之方向垂直相交之方向。因此， 傳运至相對於重力f之方向平行之方向的能量較小，而產 生塑性流動之深度小。因此，一旦塑性流動之移動量少， 而使超音波振動之施加時間不夠時，則於與接合焊墊間之 · 界面殘留空隙部或接合未完成部，而產生接合不良之可能 10 性高。 為避免以上之缺點，乃考慮增加重力f本身或重力f之 鈀加日寸間（接合時間），但當凸塊102之擠壓變形量增大或 相鄰之凸塊102間之間隔小時（封裝密度高），則有凸塊1〇2 相互接觸之虞。且，因重力f本身或重力k施加時間之增 15加，有對1C晶片議或電路基板ιι〇造成損壞之可能性。 【發明内容】 籲 發明之揭示 因此，本發明之目的在於提供一種藉在較短之時間， · 更確實地減少接合不良部位，而具有優異之作業效率及接 2〇合^賴性之接合方法及接合裝置。 依本發明之第1觀點，提供一種接合方法，係將具有 由‘體形成之第1接合部之第1接合對象物與具有由導體 成之第2接合部之第2接合對象物接合，而使前述第1 3 P >、第2接合部以接合面相接者。在此接合方法中， 8 玖、發明說明 對前述第1接合對象物於與前述接合面相交之第J方向施 加超音波振動，同時，對前述第2接合對象物於與前述第 1方向相交之第2方向施加超音波振動。 藉以上之接合方法，可在較短之時間，更確實地接合 第1接合部與第2接合部。具體而言，不僅於第2方向， =於與接σ面相父之第丨方向施加超音波振動，藉此，擠 壓在第1接合部與第2接合部之界面產生之空隙部，同時， 使該界面產生之塑性流動之深度擴大。藉此，由於空隙部 在較短時間更確實地消失，故可進行接合信賴性優異之接 又由於藉第1方向之超音波振動，亦促進凝聚核之 I長’因此可縮短接合所需之時間。因此，由於施加於接 合對象物之重力之施加時_短，故對接合對象物之損傷 亦減少。a’在本發日种，由於無增加重力本身之必要， 亦就無因重力之增加造成對接合對象物之損傷。 更佳為前述第1方向與前述接合面垂直相交，前述第 2方向則與前述接合面平行。 更佳為第1接合部或第2接合部具有由導體形成之凸 塊，第1接合對象物與第2接合對象物之接合係經由該凸 塊進行。凸塊由諸如金構成。 更佳為第1方向之超音波振動與第2方向之超音波振 動為相同之頻率亦可，為不同之頻率亦可。 ^更佳為第1方向之超音波振動之頻率為秦別刪z， 第2方向之超音波振動之頻率為2()〜5GQkHz。又，第^方 向之超音波振動之振幅宜為，第2方向之超音波 玖、發明說明 振動之振幅宜為01〜5/zm。 在本發明之較佳實施形態中，第i及第2超音波振動 也力時間為0.1〜lsec。若施加時間不到〇1 sec，則無法 、。予在界面產生塑性流動足夠之超音波振動能源，而使接 &不π王。又，若施加時間超過“Μ，則由於已給予界面 進灯良好接合足夠之超音波振動能源，反而造成能源之浪 費而不佳。 依本發明之第2觀點，提供一種接合裝置，係將具有 由導體形成之第i接合部之第！接合對象物與具有由導體 形成之第2接合部之第2接合對象物接合，而使前述第1 接口邛與第2接合部以接合面相接者。此接合裝置具有一 第1超θ波振動施加機構及一第2超音波振動施加機構， 該第1超音波振動施加機構係用以對前述第i接合對象物 於與别述接合面相3C之第丨方向施加超音波振動者，而該 第2超音波振動施加機構係用以對前述第2接合對象物於 與刚述第1方向相交之第2方向施加超音波振動者。 圖式簡單說明 第1圖係本發明實施形態之接合裝置之概略構造圖。 第2a圖〜第2c圖係顯示使用同一接合裝置將冗晶片 與電路基板接合時之兩者界面變化狀態之模式圖。 第3圖係顯示習知接合方法之IC晶片與電路基板接合 前之狀態之正視圖。 第4a圖〜第4c圖係顯示習知接合方法之Ic晶片與電路 基板之界面變化狀態之模式圖。 1223859 玖、發明說明 L實施方式】 用以實施發明之最佳形態 第1圖係顯示本發明較佳實施形態之接合裝置χι之概 略構造的截面圖。又，在本實施形態中，使用具有接合焊 5墊1〇之第1IC晶片1與具有接合焊墊20之第2IC晶片2 作為具有由導體形成之接合部之接合對象物，但接合對象 物不在此限。 如第1圖所示，接合裝置X1具有打線具3、支撐具4、 打線台5、加壓裝置6與第1及第2超音波振動子7、8。 1〇 打線具3設置於後述之超音波喇队形幅射體7〇 (僅概 略地圖不）之前端部，並具有吸取路徑3〇。此吸取路徑％ 係為了將1C晶片1吸著固定於打線具3而設置。將^晶 片1固定於打線具3之方法不限於吸著方式。 支撐具4叹置於後述之超音波喇σ八形幅射體(僅概 15略地圖示）之刖端部，並具有吸取路徑4〇。此吸取路徑4〇 係為了將1C晶片2吸著固定於支撑具4而設置。將IC晶 片2固定於支撐具4之方法不限於吸著方式。 打線台5係為了支撐支撐具4而設置。打線台5之形 狀依支撐具4之形狀等隨意設定即可。 20 加U置6係用以將兩1C晶片1、2之接合部位加壓 者。此加壓之動作藉自打線具3之正上方將重力施加於打 線具3而進行’其重力之方向（重力方向）以箭頭f表示。 第1超音波振動子7以超音波喇u八形幅射體7〇為中介 而與打線具相結合’俾可對IC晶片1於與重力方向f垂直 11 玖、發明說明 相交之第1方向施加超音波振動。第2超音波振動子8以 超音波喇^八形幅射體80為中介而與支撐具4相結合，而可 對1C晶片2於與重力方向f平行之第2方向施加超音波振 動。且，超音波振動子7、8對兩1C晶片！、2施加超音波 振動之第1方向與第2方向可互換。 其次，說明使用以上構造之接合裝置之方法。首先， 利用習知之打線方法，於第1IC晶片丨之各接合焊墊1〇形 成凸塊9。凸塊9之形成係以3〇〇〇〜5〇〇〇¥之高電壓對金線 (直k 10〜25/z m)進行電火炬（spark)，形成金球後，每 • 005 〇.〇4 更靶加超音波振動（振動頻率：扣〜ii〇kHz、 振幅：0.3〜0.6#m)，且在200〜3〇〇它之加熱下，平均又凸 塊施加8〜25g之重量，而形成於各接合焊墊忉上。又凸 塊9之形成方法不限於利用方法，且凸塊9之構成材料亦 不限於金。 其次’將如此形成凸塊9之第1IC晶片！經由吸取路 徑3〇 ’吸著固定於打線具3。且，將第加晶片經由吸取 路徑40，吸著固定於支撐具4。 其次，將第uc晶片塊9相對於第2IC晶片2 之接合焊塾20 ^位後，使打線具3以Q㈣麵/咖之速 度移動至與重力方向f平行之方向（第^之下方）。此下 方移動進行至形成於第1IC晶片i之凸塊9與第2ic晶片 之接合焊塾20接觸為止。由於打線具2之移動結構係使用 眾所周知者，故在此省略圖示 其次，藉加壓裝置6,將相當每1〇 5〜2〇g之重力施加 玖、發明說明 於接合部位之凸塊9與接合焊塾2G間。此重力之施加狀態 於後述之超音波振動施加時仍維持。 其次，經由凸塊9使第1IC晶片1與第2IC晶片2接 合。具體而吕，以第1超音波振動子7 ,經由超音波味卜八 5形幅射體70及打線具3,對第1IC晶片1於與重力方向f 垂直相父之第1方向施加超音波振動，同時，以超音波振 動子8經由超音波喇叭形幅射體8〇及支撐具4 ,對第2IC 晶片2於與重力方向f平行之方向施加超音波振動。施加 於第lie晶片1之超音波振動頻率為4〇〜2〇〇kHz，振幅為 1〇 Μ〜5/Zm，施加於第2IC晶片2之超音波振動頻率為 20〜40kHz，振幅為（u〜5/zm。又，施加於兩ic晶片ι、2 之超音波振動之施加時間為〇1〜lsec，較佳為〇·2〜〇·6^。 藉此，可對1C晶片2接合ic晶片！。此外，在接合時不 須將接合部位加熱，亦可使用其他加熱構件予以加熱。 15 在以上之接合方法中，在第1IC晶片1之各凸塊9與 第2IC晶片2之接合焊墊2〇之界面產生如第圖〜第& 圖所示之變化。 即，如第2a圖所示，因重力f之施加而受擠壓之凸塊 9之接合對象面9a與接合焊墊20之接合對象面2〇a皆具有 20細微之凹凸。因此，兩接合對象面9a、20a在微觀上僅是 在多處點接觸而已。 在此狀態下，當於與重力f平行之第丨方向及與重力f 垂直相父之第2方向施加超音波振動時，如第2b圖所示， 在最初點接觸之多處產生凝聚核14 (成為接合之原點之合 13 1223859 玖、發明說明 金化部份），該等凝聚核14沿接合界面逐漸擴大。如此， 接合開始之狀態與第4b圖所示之習知接合方向並非基本 上不同者（參照第4b圖）。因此，在接合開始時，未接合 接觸部份12及空隙13業已存在。 5 然而，在本發明之接合方法中，由於不僅於與重力f 垂直相父之第2方向，亦於與重力f平行之第j方向施加 超音波振動，故凝聚核14之成長相當快速。這是由於藉第 1方向之超音波振動使兩接合對象面9a、2〇a在瞬間靠近之 參 位相，而產生空隙13之擠壓與塑性流動之深度增加之故。 10結果，如第2c圖所示，凝聚核14在短時間成長，而空隙 13則消失。在接合完成時，雖然於兩接合對象面％、2〇a 之界面之部份殘存若干氧化物（於第2c圖以虛線表示）， 但未接合接觸部份12及空隙13已不存在，故兩冗晶片卜 2之電性接合狀態良好。且，雖然於與重力f平行之方向進 15行超音波振動，但由於並非使重力f本身或重力f之施加時 間增加，故不致有對該等IC晶片i、2造成損傷之問題。 · 在上述之接合方法中，亦可於對IC晶片丨、2施加超 音波振動前，於1C晶片2之接合焊墊2〇之形成面配置密 封用之絕緣性樹脂，且於超音波振動之施加結束後，在 20 1〇〇〜200°C之加熱下，將該絕緣性樹脂加熱並使其硬化。 如以上所述，依本發明，在與接合焊塾之接合中，可在 較短之時間更確實地減少於界面產生之空隙部及未接觸部 份等接合不良處。且，由於不須增加重力f或重力f之施加 時間，故諸如精細之1C晶片等精細之接合對象物遭受損傷 14 1223859 玖、發明說明 之可能性降低。 【圖式簡單說明】 第1圖係本發明實施形態之接合裝置之概略構造圖。 第2a圖〜第2c圖係顯示使用同一接合裝置將1C晶片 5 與電路基板接合時之兩者界面變化狀態之模式圖。 第3圖係顯示習知接合方法之1C晶片與電路基板接合 前之狀態之正視圖。 第4a圖〜第4c圖係顯示習知接合方法之1C晶片與電路 基板之界面變化狀態之模式圖。 10 【囷式之主要元件代表符號表】 1.··第1IC晶片 20…接合焊墊 2...第2IC晶片 100…1C晶片 3...打線具 101…接合焊墊 30".吸取路徑 102...金凸塊 4...支撐具 102a...接合對象面 40···吸取路徑 110...電路基板 5...打線台 111…接合焊墊 6…加壓裝置 11 la...接合對象面 7...第1超音波振動子 120…未接部接觸部份 70...超音波喇^形幅射體 130.··空隙 8...第2超音波振動子 140...凝聚核 80...超音波喇叭形幅射體 XI...接合裝置 9.. .凸塊 10.. .接合焊墊 15

Claims (1)

1223859 第092100911號專利申請案申請專利範圍修正本修正日期：拾、申請專利範塵
一種接合方法’係將具有由導體形成之第丨接合部 1接合物對象物與具有由導體形成之第2接合部之第2 接合對象物接合，較前述第1接合部與前述第2接合 部以接合面相接者； 而施加與前述接合面相交之第1方向之超音波振 動’同時，亦施加與前述第i方向平行之第2方向之超 音波振動。 10 2.如申請專圍第1項之接合方法，其中前述第^接人 部或前述第2接合部具有由導體形成之凸塊，而前述； 1接合對象物與前述第2接合對象之接合係藉由該凸塊 而進行。 15 如申請專利範圍第1項之接合方法，其中前述第i方向 之超音波振動之振動頻率為2G〜⑽kHz，而前述第。方 向之超音波振動之振動頻率為2〇〜5〇〇kHz。 -種接合裝置，係用以將具有由導體形成之第！接合部 之第1接合物對象物與具有由導㈣成之第2接合部之 第2接合對象物接合，而使前述第丨接合㈣前述第2 接合部以接合面相接者，包含有： 20 一第1超音波振動施加機構，係用以施加與前述接 合面相交之第1方向之超音波振動者；及 、 一第2超音波振動施加機構，係用以施加與前述第 1方向平行之第2方向之超音波振動者。 1
TW092100911A 2003-01-15 2003-01-16 Method of bonding electronic component or the like, and bonding apparatus used therefor TWI223859B (en)

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JPH07115109A (ja) * 1993-10-15 1995-05-02 Nec Corp フリップチップボンディング方法及び装置
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