WO2004064141A1 - Jointing method for electronic components, and jointing device used for the method - Google Patents

Jointing method for electronic components, and jointing device used for the method Download PDF

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Publication number
WO2004064141A1
WO2004064141A1 PCT/JP2003/000293 JP0300293W WO2004064141A1 WO 2004064141 A1 WO2004064141 A1 WO 2004064141A1 JP 0300293 W JP0300293 W JP 0300293W WO 2004064141 A1 WO2004064141 A1 WO 2004064141A1
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WO
WIPO (PCT)
Prior art keywords
bonding
joining
ultrasonic vibration
load
chip
Prior art date
Application number
PCT/JP2003/000293
Other languages
French (fr)
Japanese (ja)
Inventor
Hidehiko Kira
Kenji Kobae
Norio Kainuma
Hiroshi Kobayashi
Shuichi Takeuchi
Takayoshi Matsumura
Original Assignee
Fujitsu Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Limited filed Critical Fujitsu Limited
Priority to JP2004566271A priority Critical patent/JP4044559B2/en
Priority to AU2003201895A priority patent/AU2003201895A1/en
Priority to PCT/JP2003/000293 priority patent/WO2004064141A1/en
Priority to TW092100911A priority patent/TWI223859B/en
Publication of WO2004064141A1 publication Critical patent/WO2004064141A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/10—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating making use of vibrations, e.g. ultrasonic welding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05568—Disposition the whole external layer protruding from the surface
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
    • H01L2224/1133—Manufacturing methods by local deposition of the material of the bump connector in solid form
    • H01L2224/1134—Stud bumping, i.e. using a wire-bonding apparatus
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/75343—Means for applying energy, e.g. heating means by means of pressure by ultrasonic vibrations
    • H01L2224/75353—Ultrasonic horns
    • H01L2224/75354—Ultrasonic horns in the lower part of the bonding apparatus, e.g. in the apparatus chuck
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    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/757—Means for aligning
    • H01L2224/75743—Suction holding means
    • H01L2224/75744—Suction holding means in the lower part of the bonding apparatus, e.g. in the apparatus chuck
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
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    • H01L2224/757—Means for aligning
    • H01L2224/75743—Suction holding means
    • H01L2224/75745—Suction holding means in the upper part of the bonding apparatus, e.g. in the bonding head
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    • H01L2224/75981—Apparatus chuck
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
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    • H01L2224/818—Bonding techniques
    • H01L2224/81801—Soldering or alloying
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    • H01L2924/0001—Technical content checked by a classifier
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Definitions

  • the present invention relates to a joining method and a joining apparatus for joining two different joining objects (for example, electronic components and circuit boards) having a joining portion made of a conductor while applying ultrasonic vibration.
  • the size of the bonding pad of a high-density mounted semiconductor integrated circuit is about 1 ⁇ 0 ⁇ or less, and the distance between adjacent pads is about 20 Aim or less. Therefore, in the conventional solder bonding, there is a high possibility that the solder of the adjacent bonding portion is melted and integrated and short-circuited, so that the demand for high-density mounting cannot be met.
  • a joining method using ultrasonic energy has been adopted.
  • this bonding method for example, gold bumps are formed on each bonding pad of a semiconductor chip, and ultrasonic vibration is applied while pressing the gold bumps on the corresponding bonding pads of the substrate.
  • Such a bonding method is disclosed in, for example, JP-A-5-136205, JP-A-7-115009, and JP-A-2000-650. It is disclosed in the gazette.
  • FIG. 3 is an overall view of the stage where the IC chip and the circuit board are brought into contact.
  • Figs. 4 (a) to (c) are enlarged cross-sectional views showing the bonding interface between the IC chip and the circuit board. It is.
  • an IC chip 100 and a circuit board 110 are joined using ultrasonic vibration.
  • the IC chip 100 has a bonding pad 101, and a gold bump 102 is formed on the bonding pad 101.
  • Circuit board 1 1 0 It has a bonding pad 111 corresponding to the bonding pad 101 of the C chip 100.
  • the bump 102 is brought into contact with the bonding pad 111, and then the IC chip 100 is applied with a load f applied.
  • Ultrasonic vibration is supplied to one or both of the circuit boards 110.
  • FIG. 4A is an enlarged cross-sectional view of the interface between each bump 102 and the corresponding bonding pad 111 just after the load f is applied.
  • Both the bonding target surface 102 a of the bump 102 crushed by the application of the load f and the bonding target surface 111 a of the bonding pad 111 have fine irregularities. Therefore, the surface to be welded 102a and the surface to be welded 111a are microscopically only point-contacted at a plurality of locations.
  • reference numeral 120 indicates that the surface 102a to be bonded of the bump 102 is in contact with the surface 111a to be bonded of the bonding pad 111, but is still in contact A portion that has not been joined (a non-joined contact portion) is shown, and reference numeral 130 denotes a gap generated between the surfaces to be joined 102a and 111a.
  • the ultrasonic vibration is applied only in a direction orthogonal to the direction of the load f. Therefore, the energy transmitted in the direction parallel to the direction of the load is relatively small, and the depth at which plastic flow occurs is small. Therefore, if the amount of movement due to plastic flow is small and the application time of the ultrasonic vibration is not sufficiently long, voids and uncompleted portions remain at the interface between the bump and the bonding pad, and there is a high possibility that bonding failure will occur. In order to avoid the above problems, it is conceivable to increase the load f itself or the application time (joining time) of the load f.
  • the amount of crushing deformation of the bump 102 is increased, and the distance between the adjacent bumps 102 is increased. If the distance between the bumps is small (the mounting density is high), the bumps 102 may come into contact with each other. Further, there is a possibility that the IC chip 100 or the circuit board 110 may be damaged due to the increase in the load f itself or the application time of the load f. Disclosure of the invention
  • an object of the present invention is to provide a joining method and a joining apparatus which are excellent in working efficiency and joining reliability by reducing joining defective portions in a shorter time and more reliably. .
  • a first joining object having a first joining portion made of a conductor, and a second joining object having a second joining portion made of a conductor there is provided a joining method for joining the second joining portion so as to be in contact with the joining surface.
  • this bonding method ultrasonic vibration is applied to the first bonding object in a first direction intersecting the bonding surface, and at the same time, the ultrasonic vibration is applied to the second bonding object in the first direction.
  • a second direction of sound wave vibration is applied.
  • the first joining portion and the second joining portion can be joined more securely in a shorter time.
  • a void formed at the interface between the first bonding portion and the second bonding portion is applied.
  • the depth of the plastic flow generated at the interface increases.
  • the ultrasonic vibration in the first direction also promotes the growth of adhesion nuclei, thereby shortening the time required for bonding. Therefore, the time for applying the load applied to the joining object is shortened, and the damage to the joining object is reduced.
  • the first direction is orthogonal to the bonding surface
  • the second direction is parallel to the bonding surface
  • the first joint or the second joint has a bump made of a conductor, The joining between the first joining object and the second joining object is performed via the bump.
  • the bump is made of, for example, gold.
  • the ultrasonic vibration in the first direction and the ultrasonic vibration in the second direction may have the same frequency or different frequencies.
  • the vibration frequency of the ultrasonic vibration in the first direction is 20 to 500 kHz
  • the vibration frequency of the ultrasonic vibration in the second direction is 20 to 500 kHz. It is.
  • the amplitude of the ultrasonic vibration in the first direction is 0.1 to 5 m
  • the amplitude of the ultrasonic vibration in the second direction is 0.1 to 5 ⁇ .
  • the application time of the first and second ultrasonic vibrations is 0.1 to 1 sec. If the application time is less than 0.1 sec, it is not possible to apply ultrasonic vibration energy sufficient to cause plastic flow at the interface, resulting in insufficient bonding. On the other hand, if the application time exceeds 1 sec, sufficient ultrasonic vibration energy is already applied to the interface to achieve good bonding, so that energy is wasted, which is not desirable.
  • a first joining object having a first joining portion made of a conductor, and a second joining object having a second joining portion made of a conductor there is provided a bonding device for bonding so that the second bonding portion is in contact with a bonding surface.
  • the bonding apparatus includes: first ultrasonic vibration applying means for applying ultrasonic vibration to the first bonding object in a first direction intersecting the bonding surface; On the other hand, there is provided second ultrasonic vibration applying means for applying ultrasonic vibration in a second direction crossing the first direction.
  • FIG. 1 is a schematic configuration diagram of a joining device according to an embodiment of the present invention.
  • FIGS. 2a to 2c are schematic diagrams showing a change state of an interface between an IC chip and a circuit board when the IC chip and the circuit board are joined by using the joining apparatus.
  • Fig. 3 shows the state immediately before bonding the IC chip and the circuit board by the conventional bonding method. Is connected to the support tool 4 via an ultrasonic horn 80 so that ultrasonic vibration can be applied in a second direction parallel to the load direction f. The first direction and the second direction of the ultrasonic vibration with respect to both IC chips 1 and 2 by the ultrasonic oscillators 7 and 8 may be interchanged.
  • a bump 9 is formed on each bonding pad 10 of the first IC chip 1 by using a conventional wire bonding method.
  • the bump 9 is formed by sparking a gold wire (diameter 10-25 ⁇ ⁇ ) with a high voltage of 3000-500 OV to form a gold ball, and then ultrasonic vibration (vibration frequency: 60-: 110 kHz, amplitude : 0.3 to 0.6 im) for 0.005 to 0.004 seconds and a load of about 8 to 25 g per bump under heating at 200 to 300 ° C.
  • the method for forming the bump 9 is not limited to the method using the wire bonding method, and the constituent material of the bump 9 is not limited to gold.
  • the first IC chip 1 on which the bumps 9 are formed as described above is suction-fixed to the bonding tool 3 via the suction path 30. Further, the second IC chip 2 is suction-fixed to the support tool 4 via the suction path 40.
  • the bonding tool 3 is moved in the direction parallel to the load direction f at a speed of 0.1 to 1 Omm sec. In the right direction (below Fig. 1). This downward movement is performed until the bump 9 formed on the first IC chip 1 contacts the bonding pad 20 of the second IC chip 2. Since a known mechanism is used as the movement mechanism of the bonding tool 2, it is not illustrated here.
  • a pressing device 6 applies a load of 0.5 to 20 g per bump between the bump 9 and the bonding pad 20, which are bonding portions. This applied state of the load is maintained even when an ultrasonic vibration described later is applied.
  • the first IC chip 1 and the second IC chip 2 are joined via the bumps 9.
  • the ultrasonic vibration is applied to the first IC chip 1 by the first ultrasonic oscillator 7 via the ultrasonic horn 70 and the bonding tool 3 in the first direction orthogonal to the load direction f.
  • an ultrasonic Ultrasonic vibration is applied to the second IC chip 2 via the pin 80 and the support tool 4 in the second direction parallel to the load direction f.
  • the ultrasonic vibration applied to the first IC chip 1 has a frequency of 40 to 200 kHz and an amplitude of 0.1 to 5 ⁇ .
  • the ultrasonic vibration applied to the 1C chip 2 has a frequency of 20 to 40 kHz and an amplitude of 0:!
  • the application time of the ultrasonic vibration applied to both IC chips 1 and 2 is 0.1 to 1 sec, more preferably 0.2 to 0.6 sec.
  • the IC chip 1 can be joined to the IC chip 2.
  • both the bonding target surface 9a of the bump 9 crushed by the application of the load f and the bonding target surface 20a of the bonding pad 20 have fine irregularities. Have. Therefore, both surfaces 9a and 20a to be welded are microscopically only point-contact at a plurality of locations.
  • ultrasonic vibrations are applied not only in the second direction orthogonal to the load f but also in the first direction parallel to the load f. Is remarkably fast. This is because the ultrasonic vibration in the first direction has a phase in which the surfaces 9a and 20a to be welded instantaneously approach each other, so that the gap 13 is crushed and the depth of the plastic flow increases. is there. As a result, as shown in FIG. 2c, the adhesion nucleus 14 grows in a short time, and the void 13 disappears. When joining is completed, both surfaces to be joined 9 a,
  • defective bonding portions such as voids and unbonded contact portions generated at the interface can be more reliably reduced in a shorter time.
  • a delicate bonding target such as a delicate IC chip is less likely to be damaged.

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Wire Bonding (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)

Abstract

A jointing method, comprising the steps of pressing, by a load, a first jointed object (1) having first joint parts (10) formed of conductors and a second jointed object (2) having second jointing parts (20) formed of conductors so that the first joint parts (10) can be jointed to the second joint parts (20) by applying ultrasonic vibration to the first jointed object (1) in a first direction orthogonal to the direction (arrow f) of the load and to the second jointed object (2) in a second direction parallel with the direction (arrow f) of the load.

Description

明細書 電子部品等の接合方法、 およびそれに用いる接合装置 技術分野  Description Method for joining electronic parts and the like, and joining device used for the method
本発明は、 導体からなる接合部を有する異なる 2つの接合対象物 （例えば、 電 子部品や回路基板） を超音波振動を付与しながら接合する接合方法、 および接合 装置に関する。 背景技術  The present invention relates to a joining method and a joining apparatus for joining two different joining objects (for example, electronic components and circuit boards) having a joining portion made of a conductor while applying ultrasonic vibration. Background art
近年、 電子機器に対する高性能化および小型化などの要求に伴い、 電子機器に 組み込まれる電子部品の高密度実装化が急速に進んでいる。 例えば、 高密度実装 された半導体集積回路の接合パッドのサイズは、 1◦ 0 μ πι角程度またはこれ以 下であり、 加えて隣接パッド間距離は、 2 0 Ai m程度またはこれ以下である。 そ のため、 従来の半田接合では、 隣接する接合部の半田が溶融一体化して短絡する 可能性が高いので、 高密度実装化の要望に対応できない。  In recent years, with the demand for higher performance and smaller size of electronic devices, high-density mounting of electronic components incorporated in electronic devices is rapidly progressing. For example, the size of the bonding pad of a high-density mounted semiconductor integrated circuit is about 1◦0 μππ or less, and the distance between adjacent pads is about 20 Aim or less. Therefore, in the conventional solder bonding, there is a high possibility that the solder of the adjacent bonding portion is melted and integrated and short-circuited, so that the demand for high-density mounting cannot be met.
そこで、 高密度実装化の要請に対応するために、 超音波エネルギを利用した接 合方法が採用されている。 この接合方法では、 例えば、 半導体チップの各接合パ ッドに金バンプを形成し、 基板の対応する接合パッドにこれら金バンプを押し付 けながら超音波振動を印加するのである。 このような接合方法は、 例えば、 特開 平 5— 1 3 6 2 0 5号公報、 特開平 7— 1 1 5 1 0 9号公報および特開 2 0 0 0 - 2 0 8 5 6 0号公報に開示されている。  In order to respond to the demand for high-density mounting, a joining method using ultrasonic energy has been adopted. In this bonding method, for example, gold bumps are formed on each bonding pad of a semiconductor chip, and ultrasonic vibration is applied while pressing the gold bumps on the corresponding bonding pads of the substrate. Such a bonding method is disclosed in, for example, JP-A-5-136205, JP-A-7-115009, and JP-A-2000-650. It is disclosed in the gazette.
超音波振動を利用した従来の接合方法をより具体的に説明するために、 添付図 面の図 3および図 4 a〜4 cを参照する。 図 3は、 I Cチップと回路基板とを接 触させた段階での全体図であり、 図 4 ( a ) 〜 （c ) は、 I Cチップと回路基板 との間の接合界面を表す拡大断面図である。  In order to more specifically explain the conventional joining method using ultrasonic vibration, reference is made to FIG. 3 and FIGS. 4a to 4c in the attached drawings. Fig. 3 is an overall view of the stage where the IC chip and the circuit board are brought into contact. Figs. 4 (a) to (c) are enlarged cross-sectional views showing the bonding interface between the IC chip and the circuit board. It is.
図 3に示すように、 超音波振動を利用して例えば I Cチップ 1 0 0と回路基板 1 1 0とが接合される。 I Cチップ 1 0 0は接合パッド 1 0 1を有しており、 当 該接合パッド 1 0 1に金バンプ 1 0 2が形成されている。 回路基板 1 1 0は、 I Cチップ 1 0 0の接合パッド 1 0 1に対応する接合パッド 1 1 1を有している。 上記 I Cチップ 1 0 0と回路基板 1 1 0とを接合するに際しては、 バンプ 1 0 2 と接合パッド 1 1 1とを接触させた上で、 荷重 f を印加した状態で I Cチップ 1 0 0と回路基板 1 1 0の一方または両方に超音波振動を供給する。 As shown in FIG. 3, for example, an IC chip 100 and a circuit board 110 are joined using ultrasonic vibration. The IC chip 100 has a bonding pad 101, and a gold bump 102 is formed on the bonding pad 101. Circuit board 1 1 0 It has a bonding pad 111 corresponding to the bonding pad 101 of the C chip 100. When bonding the IC chip 100 and the circuit board 110, the bump 102 is brought into contact with the bonding pad 111, and then the IC chip 100 is applied with a load f applied. Ultrasonic vibration is supplied to one or both of the circuit boards 110.
図 4 aは、 荷重 f を印加した直後における各バンプ 1 0 2と対応する接合パッ ド 1 1 1との界面の拡大断面図である。 荷重 f の印加により押し潰されたバンプ 1 0 2の接合対象面 1 0 2 aと、 接合パッド 1 1 1の接合対象面 1 1 1 aとは、 いずれも微細な凹凸を有している。 そのため、 接合対象面 1 0 2 aと接合対象面 1 1 1 aとは、 微視的には、 複数箇所で点接触しているに過ぎない。  FIG. 4A is an enlarged cross-sectional view of the interface between each bump 102 and the corresponding bonding pad 111 just after the load f is applied. Both the bonding target surface 102 a of the bump 102 crushed by the application of the load f and the bonding target surface 111 a of the bonding pad 111 have fine irregularities. Therefore, the surface to be welded 102a and the surface to be welded 111a are microscopically only point-contacted at a plurality of locations.
この状態で荷重 f に直交する方向に超音波振動を印加すると、 図 4 bに示すよ うに、 当初点接触していた複数箇所で凝着核 1 4 0 (接合の基点となる合金化部 分） が生じ、 これら凝着核 1 4 0が接合界面に沿って広がってゆく。 図 4 b中に おいて、 符号 1 2 0は、 バンプ 1 0 2の接合対象面 1 0 2 aと接合パッド 1 1 1 の接合対象面 1 1 1 aとが接触はしているが、 未だ接合していない部分 （未接合 接触部分） を表し、 符号 1 3 0は両接合対象面 1 0 2 a , 1 1 1 a間に生じた空 隙を表している。  In this state, when ultrasonic vibration is applied in the direction perpendicular to the load f, as shown in Fig. 4b, the adhesion nuclei 140 ) Occurs, and these adhesion nuclei 140 spread along the bonding interface. In FIG. 4b, reference numeral 120 indicates that the surface 102a to be bonded of the bump 102 is in contact with the surface 111a to be bonded of the bonding pad 111, but is still in contact A portion that has not been joined (a non-joined contact portion) is shown, and reference numeral 130 denotes a gap generated between the surfaces to be joined 102a and 111a.
さらに、 超音波振動に伴う摩擦によって金属が塑性流動するため、 図 4 cに示 すように、 界面において凝着核 1 4 0の成長が進むとともに、 空隙 1 3 0が縮小 あるいは消滅する。 これにより、 当初に未接合接触部分 1 2 0であったものは接 合に至る。 しかしながら、 空隙 1 3 0が存在した部分では、 未だ接合するまでに は至らず、 縮小した空隙 1 3 0や未接合接触部分 1 2 0として残っている割合が 高い。 なお、 図面上の点線で示した部分は、 バンプ 1 0 2や接合パッド 1 1 1の 表面に当初存在していた酸化物の残留部分を示す。  Furthermore, since the metal plastically flows due to friction caused by the ultrasonic vibration, as shown in FIG. 4c, the growth of the adhesion nucleus 140 at the interface progresses, and the voids 130 shrink or disappear. As a result, what was initially an unjoined contact portion 120 is joined. However, in the portion where the voids 130 existed, bonding was not yet completed, and the proportion of the reduced voids 130 and unbonded contact portions 120 remained high. The portions indicated by the dotted lines in the drawing indicate the remaining portions of the oxide originally present on the surfaces of the bumps 102 and the bonding pads 111.
このように、 上記日本国特許公報に開示されている技術において、 超音波振動 は、 荷重 f の向きに対して直交する方向にのみ印可されている。 そのため、 荷重 の向きに対して平行な方向へ伝わるエネルギは比較的小さく、 塑性流動を起こす 深さは小さい。 したがって、 塑性流動による移動量が少なく、 超音波振動の印加 時間を十分に長くしないとバンプと接合パッドとの間の界面に空隙部や接合未完 部が残り、 接合不良を起こす可能性が高い。 以上の不具合を避けるために、 荷重 f 自体や荷重 f の印加時間 （接合時間） を 増加させることが考えられるが、 バンプ 1 0 2の押し潰し変形量が大きくなり、 隣接するバンプ 1 0 2間の間隔が小さい場合 （実装密度が高い） には、 バンプ 1 0 2が相互に接触するおそれがある。 また、 荷重 f 自体や荷重 f の印加時間の増 大により、 I Cチップ 1 0 0や回路基板 1 1 0にダメージを与える可能性もある。 発明の開示 As described above, in the technology disclosed in the Japanese Patent Publication, the ultrasonic vibration is applied only in a direction orthogonal to the direction of the load f. Therefore, the energy transmitted in the direction parallel to the direction of the load is relatively small, and the depth at which plastic flow occurs is small. Therefore, if the amount of movement due to plastic flow is small and the application time of the ultrasonic vibration is not sufficiently long, voids and uncompleted portions remain at the interface between the bump and the bonding pad, and there is a high possibility that bonding failure will occur. In order to avoid the above problems, it is conceivable to increase the load f itself or the application time (joining time) of the load f. However, the amount of crushing deformation of the bump 102 is increased, and the distance between the adjacent bumps 102 is increased. If the distance between the bumps is small (the mounting density is high), the bumps 102 may come into contact with each other. Further, there is a possibility that the IC chip 100 or the circuit board 110 may be damaged due to the increase in the load f itself or the application time of the load f. Disclosure of the invention
そこで、 本発明は、 より短時間で、 より確実に接合不良部位を減少させること によって、 作業効率およぴ接合信頼性に優れた接合方法およぴ接合装置を提供す ることを目的としている。  Therefore, an object of the present invention is to provide a joining method and a joining apparatus which are excellent in working efficiency and joining reliability by reducing joining defective portions in a shorter time and more reliably. .
本発明の第 1の側面によれば、 導体からなる第 1接合部を有する第 1接合対象 物と、 導体からなる第 2接合部を有する第 2接合対象物とを、 前記第 1接合部と 前記第 2接合部とが接合面にて接するように接合する接合方法が提供される。 こ の接合方法では、 前記第 1接合対象物に対して前記接合面に交差する第 1の方向 に超音波振動を印加すると同時に、 前記第 2接合対象物に対して前記第 1の方向 に交差する第 2の方向の釋音波振動を印加する。  According to the first aspect of the present invention, a first joining object having a first joining portion made of a conductor, and a second joining object having a second joining portion made of a conductor, There is provided a joining method for joining the second joining portion so as to be in contact with the joining surface. In this bonding method, ultrasonic vibration is applied to the first bonding object in a first direction intersecting the bonding surface, and at the same time, the ultrasonic vibration is applied to the second bonding object in the first direction. A second direction of sound wave vibration is applied.
以上の接合方法によれば、 第 1接合部と第 2接合部とは、 より短時間で、 より 確実に接合させることができる。 具体的には、 第 2の方向のみならず、 接合面に 交差する第 1の方向にも超音波振動を印加することにより、 第 1接合部と第 2接 合部との界面において生じる空隙部を押し潰すとともに、 当該界面において生じ る塑性流動の深さが拡大する。 これにより、 空隙部がより短時間でより確実に消 滅するため.、 接合信頼性に優れた接合を行うことができる。 また、 第 1の方向の 超音波振動により、 凝着核の成長も促進されるので、 それによつて接合に要する 時間を短縮できる。 したがって、 接合対象物にかかる荷重の印加時間が短くなる ので、 接合対象物へのダメージも少なくなる。 しかも、 本発明では、 荷重自体を 増加させる必要はないので、 荷重の増加による接合対象物へのダメージもない。 好ましくは、 前記第 1の方向は前記接合面に直交しており、 前記第 2の方向は 前記接合面に平行である。  According to the above joining method, the first joining portion and the second joining portion can be joined more securely in a shorter time. Specifically, by applying the ultrasonic vibration not only in the second direction but also in the first direction intersecting the bonding surface, a void formed at the interface between the first bonding portion and the second bonding portion is applied. And the depth of the plastic flow generated at the interface increases. As a result, the void portion is more reliably erased in a shorter time, so that it is possible to perform joining with excellent joining reliability. In addition, the ultrasonic vibration in the first direction also promotes the growth of adhesion nuclei, thereby shortening the time required for bonding. Therefore, the time for applying the load applied to the joining object is shortened, and the damage to the joining object is reduced. Moreover, according to the present invention, it is not necessary to increase the load itself, so that there is no damage to the joining object due to the increase in the load. Preferably, the first direction is orthogonal to the bonding surface, and the second direction is parallel to the bonding surface.
好ましくは、 第 1接合部または第 2接合部は、 導体からなるバンプを有し、 第 1接合対象物と第 2接合対象物との接合は、 当該バンプを介して行われる。 バン プは例えば金からなる。 Preferably, the first joint or the second joint has a bump made of a conductor, The joining between the first joining object and the second joining object is performed via the bump. The bump is made of, for example, gold.
好ましくは、 第 1の方向の超音波振動と第 2の方向の超音波振動とは、 同一の 周波数であってもよいし、 異なる周波数であつてもよい。  Preferably, the ultrasonic vibration in the first direction and the ultrasonic vibration in the second direction may have the same frequency or different frequencies.
好ましくは、 第 1の方向の超音波振動の振動周波数は、 2 0〜 5 0 0 k H zで あり、 第 2の方向の超音波振動の振動周波数は、 2 0〜5 0 0 k H zである。 ま た、 第 1の方向の超音波振動の振幅は、 0 . l〜5 mであり、 第 2の方向の超 音波振動の振幅は、 0 . 1〜5 μ πιであるのが好ましい。  Preferably, the vibration frequency of the ultrasonic vibration in the first direction is 20 to 500 kHz, and the vibration frequency of the ultrasonic vibration in the second direction is 20 to 500 kHz. It is. Preferably, the amplitude of the ultrasonic vibration in the first direction is 0.1 to 5 m, and the amplitude of the ultrasonic vibration in the second direction is 0.1 to 5 μπι.
本発明の好ましい実施形態においては、 第 1および第 2超音波振動の印加時間 は、 0 . 1〜1 s e cである。 印加時間が 0 . 1 s e c未満では界面にて塑性流 動を起こすのに十分な超音波振動エネルギを付与できず、 接合が不十分となる。 また、 印加時間が 1 s e cを超えると、 すでに良好な接合を行うのに十分な超音 波振動エネルギが界面に付与されているので、 エネルギの無駄になり好ましくな レ、。  In a preferred embodiment of the present invention, the application time of the first and second ultrasonic vibrations is 0.1 to 1 sec. If the application time is less than 0.1 sec, it is not possible to apply ultrasonic vibration energy sufficient to cause plastic flow at the interface, resulting in insufficient bonding. On the other hand, if the application time exceeds 1 sec, sufficient ultrasonic vibration energy is already applied to the interface to achieve good bonding, so that energy is wasted, which is not desirable.
本発明の第 2の側面によれば、 導体からなる第 1接合部を有する第 1接合対象 物と、 導体からなる第 2接合部を有する第 2接合対象物とを、 前記第 1接合部と 前記第 2接合部とが接合面にて接するように接合するための接合装置が提供され る。 この接合装置は、 前記第 1接合対象物に対して前記接合面に交差する第 1の 方向に超音波振動を印加するための第 1超音波振動印加手段と、 前記第 2接合対 象物に対して前記第 1の方向に交差する第 2の方向に超音波振動を印加するため の第 2超音波振動印加手段とを備えている。  According to the second aspect of the present invention, a first joining object having a first joining portion made of a conductor, and a second joining object having a second joining portion made of a conductor, There is provided a bonding device for bonding so that the second bonding portion is in contact with a bonding surface. The bonding apparatus includes: first ultrasonic vibration applying means for applying ultrasonic vibration to the first bonding object in a first direction intersecting the bonding surface; On the other hand, there is provided second ultrasonic vibration applying means for applying ultrasonic vibration in a second direction crossing the first direction.
本発明の他の目的、 特徴および利点は、 以下に添付図面に基づいて説明する好 適な実施形態から明らかとなろ'う。 図面の簡単な説明  Other objects, features and advantages of the present invention will become apparent from the preferred embodiments described below with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE FIGURES
図 1は、 本発明の実施の形態に係る接合装置の概略構成図である。  FIG. 1 is a schematic configuration diagram of a joining device according to an embodiment of the present invention.
図 2 a〜2 cは、 同接合装置を用いて I Cチップと回路基板とを接合する場合 の両者の界面の変化状態を示す模式図である。  2a to 2c are schematic diagrams showing a change state of an interface between an IC chip and a circuit board when the IC chip and the circuit board are joined by using the joining apparatus.
図 3は、 従来の接合方法による I Cチップと回路基板との接合直前の状態を示 に対して荷重方向 f に平行な第 2の方向に超音波振動を印加することができるよ うに、 超音波ホーン 80を介して支持ツール 4に結合されている。 なお、 超音波 発振器 7， 8による両 I Cチップ 1， 2に対する超音波振動の第 1の方向と第 2 の方向とを入れ替えてもよい。 Fig. 3 shows the state immediately before bonding the IC chip and the circuit board by the conventional bonding method. Is connected to the support tool 4 via an ultrasonic horn 80 so that ultrasonic vibration can be applied in a second direction parallel to the load direction f. The first direction and the second direction of the ultrasonic vibration with respect to both IC chips 1 and 2 by the ultrasonic oscillators 7 and 8 may be interchanged.
次に、 以上の構成の接合装置を用いた接合方法について説明する。 まず、 第 1 の I Cチップ 1の各接合パッド 10に従来のワイヤボンディング方法を利用して バンプ 9を形成する。 バンプ 9は、 金線 （直径 10〜25 ^ηι) を 3000〜 5 00 OVの高電圧でスパークして金ボールを形成した後、 超音波振動 （振動周波 数： 60〜： 1 10 kHz、 振幅： 0. 3〜0. 6 im) を 0. 005〜0. 04 秒間付与しつつ、 200〜300°Cの加熱下で 1バンプ当り 8〜25 g程度の荷 重をかけることにより各接合パッド 1 0上に形成する。 なお、 バンプ 9の形成方 法は、 ワイヤボンディング方法を利用したものに限られず、 バンプ 9の構成材料 も、 金に限られない。  Next, a joining method using the joining apparatus having the above configuration will be described. First, a bump 9 is formed on each bonding pad 10 of the first IC chip 1 by using a conventional wire bonding method. The bump 9 is formed by sparking a gold wire (diameter 10-25 ^ ηι) with a high voltage of 3000-500 OV to form a gold ball, and then ultrasonic vibration (vibration frequency: 60-: 110 kHz, amplitude : 0.3 to 0.6 im) for 0.005 to 0.004 seconds and a load of about 8 to 25 g per bump under heating at 200 to 300 ° C. Formed on 10 The method for forming the bump 9 is not limited to the method using the wire bonding method, and the constituent material of the bump 9 is not limited to gold.
次に、 このようにバンプ 9を形成した第 1の I Cチップ 1を、 吸引路 30を介 してボンディングツール 3に吸着固定する。 また、 第 2の I Cチップ 2を、 吸引 路 40を介して支持ツール 4に吸着固定する。  Next, the first IC chip 1 on which the bumps 9 are formed as described above is suction-fixed to the bonding tool 3 via the suction path 30. Further, the second IC chip 2 is suction-fixed to the support tool 4 via the suction path 40.
次に、 第 1の I Cチップ 1のバンプ 9を第 2の I Cチップ 2の接合パッド 20 に対して位置合わせした後、 ボンディングツール 3を 0. 1〜1 Omm s e c の速度で荷重方向 f に平行な方向（図 1の下方）に移動させる。この下方移動は、 第 1の I Cチップ 1に形成されたバンプ 9が第 2の I Cチップ 2の接合パッド 2 0に接触するまで行われる。 ボンディングツール 2の移動メカニズムとしては、 公知のものが用いられるため、 ここでは図示を省略する。  Next, after aligning the bumps 9 of the first IC chip 1 with the bonding pads 20 of the second IC chip 2, the bonding tool 3 is moved in the direction parallel to the load direction f at a speed of 0.1 to 1 Omm sec. In the right direction (below Fig. 1). This downward movement is performed until the bump 9 formed on the first IC chip 1 contacts the bonding pad 20 of the second IC chip 2. Since a known mechanism is used as the movement mechanism of the bonding tool 2, it is not illustrated here.
次に、 加圧装置 6により、 接合部位であるバンプ 9と接合パッド 20との間に 1バンプ当り 0. 5〜20 gの荷重を印加する。 この荷重の印加状態は、 後述す る超音波振動の印加時も保持される。  Next, a pressing device 6 applies a load of 0.5 to 20 g per bump between the bump 9 and the bonding pad 20, which are bonding portions. This applied state of the load is maintained even when an ultrasonic vibration described later is applied.
次に、 第 1の I Cチップ 1と第 2の I Cチップ 2をバンプ 9を介して接合させ る。 具体的には、 第 1の超音波発振器 7により超音波ホーン 70およびボンディ ングツール 3を介して、 第 1の I Cチップ 1に対して荷重方向 f に直交する第 1 の方向に超音波振動を印加し、 これと同時に、 超音波発振器 8により超音波ホー ン 8 0および支持ツール 4を介して、 第 2の I Cチップ 2に対して荷重方向 f に 平行な第 2の方向に超音波振動を印加する。 第 1の I Cチップ 1に印加される超 音波振動は、 周波数が 4 0〜 2 0 0 k H z、 振幅 0 . 1〜5 μ πιであり、 第 2のNext, the first IC chip 1 and the second IC chip 2 are joined via the bumps 9. Specifically, the ultrasonic vibration is applied to the first IC chip 1 by the first ultrasonic oscillator 7 via the ultrasonic horn 70 and the bonding tool 3 in the first direction orthogonal to the load direction f. And at the same time, an ultrasonic Ultrasonic vibration is applied to the second IC chip 2 via the pin 80 and the support tool 4 in the second direction parallel to the load direction f. The ultrasonic vibration applied to the first IC chip 1 has a frequency of 40 to 200 kHz and an amplitude of 0.1 to 5 μπι.
1 Cチップ 2に印加される超音波振動は、 周波数が 2 0〜 4 0 k H z、 振幅 0 . ：!〜 5 μ mである。 また、 両 I Cチップ 1 , 2に印加される超音波振動の印加時 間は、 0 . 1〜 1 s e cであり、 より好ましくは 0 . 2〜0 . 6 s e cである。 これによつて、 I Cチップ 2に対して I Cチップ 1を接合することができる。 な お、 当該接合時において接合部位を加熱する必要はないが、 別途加熱手段を用い て加熱するようにしてもよレ、。 The ultrasonic vibration applied to the 1C chip 2 has a frequency of 20 to 40 kHz and an amplitude of 0:! The application time of the ultrasonic vibration applied to both IC chips 1 and 2 is 0.1 to 1 sec, more preferably 0.2 to 0.6 sec. Thus, the IC chip 1 can be joined to the IC chip 2. In addition, it is not necessary to heat the joining portion at the time of the joining, but it is also possible to heat the joining portion separately using a heating means.
以上の接合方法において、 第 1の I Cチップ 1の各バンプ 9と第 2の I Cチッ プ 2の接合パッド 2 0との界面では、 図 2 a〜2 cに示すような変化が生じる。 すなわち、 図 2 aに示すように、 荷重 f の印加により押し潰されたバンプ 9の 接合対象面 9 aと、 接合パッド 2 0の接合対象面 2 0 aとは、 いずれも微細な凹 凸を有している。 そのため、 両接合対象面 9 a , 2 0 aは、 微視的には、 複数箇 所で点接触しているに過ぎない。  In the bonding method described above, a change as shown in FIGS. 2A to 2C occurs at the interface between each bump 9 of the first IC chip 1 and the bonding pad 20 of the second IC chip 2. In other words, as shown in FIG. 2a, both the bonding target surface 9a of the bump 9 crushed by the application of the load f and the bonding target surface 20a of the bonding pad 20 have fine irregularities. Have. Therefore, both surfaces 9a and 20a to be welded are microscopically only point-contact at a plurality of locations.
この状態で荷重 f に平行な第 1の方向と荷重 f に直交する第 2の方向に超音波 振動を印加すると、 図 2 bに示すように、 当初は点接触していた複数箇所で凝着 核 1 4 (接合の基点となる合金化部分） が生じ、 これら凝着核 1 4が接合界面に 沿って広がってゆく。 このように、 接合開始の状態は、 図 4 bに示した従来の接 合方法と基本的に異なるものではない （図 4 b参照） 。 したがって、 接合開始時 においては、 未接合接触部分 1 2や空隙 1 3が存在している。  In this state, when ultrasonic vibration is applied in the first direction parallel to the load f and the second direction orthogonal to the load f, adhesion occurs at multiple points that were initially in point contact, as shown in Figure 2b. A nucleus 14 (the alloyed part that serves as a base point for joining) is generated, and these adhesion nuclei 14 spread along the joining interface. Thus, the state of the start of joining is not fundamentally different from the conventional joining method shown in FIG. 4b (see FIG. 4b). Therefore, at the start of joining, unjoined contact portions 12 and voids 13 are present.
しかしながら、 本発明の接合方法では、 荷重 f に直交する第 2の方向のみなら ず、 荷重 f に平行な第 1の方向にも超音波振動を印加しているので、 凝着核 1 4 の成長が著しく速い。これは第 1の方向の超音波振動により、両接合対象面 9 a， 2 0 aが瞬間的に近づく位相があるため、 空隙 1 3の押し潰しと塑性流動の深さ の増加が生じるからである。 この結果、 図 2 cに示すように、 短時間で凝着核 1 4が成長し、 空隙 1 3が消滅する。 接合完了時においては、 両接合対象面 9 a , However, in the joining method of the present invention, ultrasonic vibrations are applied not only in the second direction orthogonal to the load f but also in the first direction parallel to the load f. Is remarkably fast. This is because the ultrasonic vibration in the first direction has a phase in which the surfaces 9a and 20a to be welded instantaneously approach each other, so that the gap 13 is crushed and the depth of the plastic flow increases. is there. As a result, as shown in FIG. 2c, the adhesion nucleus 14 grows in a short time, and the void 13 disappears. When joining is completed, both surfaces to be joined 9 a,
2 0 aの界面であった部分には、 若干の酸化物 （図 2 cに点線で示す） が残存す るものの、未接合接触部分 1 2や空隙 1 3は残っていないため、両 I Cチップ 1， 2の電気的な接合状態は良好なものとなる。 しかも、 加重 f と平行な第 1の方向 に超音波振動させるものの、 加重 f 自体や加重 f の印加時間を増加させるわけで はないので、 これら I Cチップ 1 , 2へのダメージが問題となることもない。 上述の接合方法において、 I Cチップ 1 , 2に対して超音波振動を印加する前 に、 I Cチップ 2における接合パッド 2 0の形成面に封止用の絶縁性樹脂を配置 し、 超音波振動の印加終了後に、 当該絶縁性樹脂を 1 0 0〜2 0 0 °Cの加熱下で 3 0〜 1 2 0分間加熱硬化させるようにしてもよレ、。 Although a small amount of oxide (indicated by the dotted line in Fig. 2c) remains in the part that was the interface at 20a, the unbonded contact part 12 and the void 13 do not remain. 1, The electrical connection state of 2 is good. In addition, although ultrasonic vibration is performed in the first direction parallel to the load f, the load f itself and the application time of the load f are not increased, so that damage to the IC chips 1 and 2 becomes a problem. Nor. In the bonding method described above, before applying ultrasonic vibration to the IC chips 1 and 2, an insulating resin for sealing is arranged on the surface of the IC chip 2 where the bonding pads 20 are formed, and the ultrasonic vibration is applied. After the application is completed, the insulating resin may be cured by heating at 100 to 200 ° C. for 30 to 120 minutes.
以上に説明したように、本発明によるとバンプと接合パッドとの接合において、 界面に生じる空隙部や未接合接触部などの接合不良箇所をより短時間で、 より確 実に減少することができる。 また、 荷重 f 自体や荷重 f の印加時間を増加させる 必要がないので、 繊細な I Cチップなどのような繊細な接合対象物がダメージを 受ける可能性が低くなる。  As described above, according to the present invention, in the bonding between the bump and the bonding pad, defective bonding portions such as voids and unbonded contact portions generated at the interface can be more reliably reduced in a shorter time. In addition, since it is not necessary to increase the load f itself or the application time of the load f, a delicate bonding target such as a delicate IC chip is less likely to be damaged.

Claims

請求の範囲 The scope of the claims
1 . .導体からなる第 1接合部を有する第 1接合対象物と、 導体からなる第 2接合 部を有する第 2接合対象物とを、 前記第 1接合部と前記第 2接合部とが接合面に て接するように接合する方法であって、 1. A first joining object having a first joining portion made of a conductor and a second joining object having a second joining portion made of a conductor are joined to the first joining portion and the second joining portion. It is a method of joining so that it touches the surface,
前記接合面に交差する第 1の方向の超音波振動を印加すると同時に、 前記第 1 の方向と交差する第 2の方向の超音波振動を印加する、 接合方法。  A bonding method, comprising: applying ultrasonic vibration in a first direction intersecting the bonding surface and simultaneously applying ultrasonic vibration in a second direction crossing the first direction.
2 . 前記第 1の方向は前記接合面に直交しており、 前記第 2の方向は前記接合面 に平行である、 請求項 1に記載の接合方法。 2. The bonding method according to claim 1, wherein the first direction is orthogonal to the bonding surface, and the second direction is parallel to the bonding surface.
3 . 前記第 1接合部または前記第 2接合部は、 導体からなるバンプを有し、 前記 第 1接合対象物と前記第 2接合対象物との接合は、当該バンプを介して行われる、 請求項 1に記載の接合方法。 3. The first bonding portion or the second bonding portion has a bump made of a conductor, and the bonding between the first bonding target and the second bonding target is performed via the bump. Item 1. The joining method according to Item 1.
4 . 前記第 1の方向の超音波振動の振動周波数は、 2 0〜5 0 0 k H z.であり、 前記第 2の方向の超音波振動の振動周波数は、 2 0〜 5 0 0 k H Zである、 請求 項 1に記載の接合方法。 4. The vibration frequency of the ultrasonic vibration in the first direction is 20 to 500 kHz, and the vibration frequency of the ultrasonic vibration in the second direction is 20 to 500 k. is H Z, bonding method according to claim 1.
5 . 導体からなる第 1接合部を有する第 1接合対象物と、 導体からなる第 2接合 部を有する第 2接合対象物とを、 前記第 1接合部と前記第 2接合部とが接合面に て接するように接合するための装置であって、 5. A first joint object having a first joint portion made of a conductor and a second joint object having a second joint portion made of a conductor are joined to each other at a joint surface between the first joint portion and the second joint portion. An apparatus for joining so as to be in contact with each other,
前記接合面に交差する第 1の方向の超音波振動を印加するための第 1超音波振 動印加手段と、 前記第 1の方向と交差する第 2の方向の超音波振動を印加するた めの第 2超音波振動印加手段とを備えることを特徴とする、 接合装置。  A first ultrasonic vibration applying means for applying ultrasonic vibration in a first direction intersecting the bonding surface, and an ultrasonic vibration in a second direction intersecting the first direction. And a second ultrasonic vibration applying means.
6 . 前記第 1の方向は前記接合面に直交しており、 前記第 2の方向は前記接合面 に平行である、 請求項 6に記載の接合装置。 6. The bonding apparatus according to claim 6, wherein the first direction is orthogonal to the bonding surface, and the second direction is parallel to the bonding surface.
PCT/JP2003/000293 2003-01-15 2003-01-15 Jointing method for electronic components, and jointing device used for the method WO2004064141A1 (en)

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PCT/JP2003/000293 WO2004064141A1 (en) 2003-01-15 2003-01-15 Jointing method for electronic components, and jointing device used for the method
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07115109A (en) * 1993-10-15 1995-05-02 Nec Corp Flip chip bonding method and device thereof
JPH10178071A (en) * 1996-12-18 1998-06-30 Sony Corp Chip-bonding device and its method
JPH11284028A (en) * 1998-03-27 1999-10-15 Toshiba Corp Bonding method and its device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07115109A (en) * 1993-10-15 1995-05-02 Nec Corp Flip chip bonding method and device thereof
JPH10178071A (en) * 1996-12-18 1998-06-30 Sony Corp Chip-bonding device and its method
JPH11284028A (en) * 1998-03-27 1999-10-15 Toshiba Corp Bonding method and its device

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AU2003201895A1 (en) 2004-08-10

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