WO2003085710A1 - Equipement de traitement thermique vertical - Google Patents
Equipement de traitement thermique vertical Download PDFInfo
- Publication number
- WO2003085710A1 WO2003085710A1 PCT/JP2003/003862 JP0303862W WO03085710A1 WO 2003085710 A1 WO2003085710 A1 WO 2003085710A1 JP 0303862 W JP0303862 W JP 0303862W WO 03085710 A1 WO03085710 A1 WO 03085710A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- rotating shaft
- heat treatment
- vertical heat
- treatment apparatus
- cooling
- Prior art date
Links
- 238000001816 cooling Methods 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000000112 cooling gas Substances 0.000 claims abstract description 12
- 239000003507 refrigerant Substances 0.000 claims abstract description 11
- 238000010438 heat treatment Methods 0.000 claims description 52
- 239000007789 gas Substances 0.000 claims description 49
- 238000005192 partition Methods 0.000 claims description 29
- 238000012545 processing Methods 0.000 claims description 28
- 239000011261 inert gas Substances 0.000 claims description 18
- 239000002826 coolant Substances 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 230000005855 radiation Effects 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 19
- 238000006243 chemical reaction Methods 0.000 description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 229910001873 dinitrogen Inorganic materials 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 7
- 239000000498 cooling water Substances 0.000 description 6
- 238000007789 sealing Methods 0.000 description 5
- 238000000638 solvent extraction Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- -1 for example Substances 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910001026 inconel Inorganic materials 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Definitions
- the present invention relates to a vertical heat treatment apparatus for performing heat treatment on a plurality of substrates to be processed together. More specifically, the present invention relates to a vertical heat treatment apparatus having an improved rotation mechanism for rotating a holder on which a plurality of substrates to be processed are stacked.
- the vertical heat treatment apparatus is typically used by being incorporated in a semiconductor processing system.
- semiconductor processing refers to forming a semiconductor layer, an insulating layer, a conductive layer, and the like in a predetermined pattern on a substrate to be processed such as a semiconductor wafer or a glass substrate, and thereby forming a semiconductor on the substrate to be processed. It refers to various processes performed to manufacture structures including devices, wiring, electrodes, etc., connected to semiconductor devices.
- various types of processing equipment are used for performing processes such as film deposition, oxidation, diffusion, modification, annealing, and etching on a substrate to be processed, for example, a semiconductor wafer.
- a vertical heat processing apparatus that heat-treats a large number of wafers at once is known.
- FIG. 7 is a sectional view showing a conventional rotation mechanism for rotating a wafer port used in a vertical heat treatment apparatus.
- a rotary mechanism 115 is provided on a vertically movable lid 105 that opens and closes the furnace port (load port) of the vertical heat treatment furnace.
- the rotation mechanism 1 15 has a large number of wafers (substrates to be processed). Used to rotate the wafer boat (holding fixture).
- the rotation mechanism 115 has a rotation shaft 116 and a support portion 119 rotatably supporting the rotation shaft 116 via a bearing 117 and a seal member 118.
- a motor 128 is connected to the lower end of the rotating shaft 116 via a belt 130.
- a rotary table 120 is provided at the upper end of the rotary shaft 116 penetrating the lid 105.
- the turntable 120 includes a lower member 120a and an upper member 120b that are detachably fixed.
- a vibration structure 160 is formed.
- a structure for cooling the rotating shaft 116 is used.
- an inert gas for example, nitrogen gas N 2
- N 2 an inert gas flowing around the outer periphery of the rotating shaft 116 and a lid
- the rotating shaft 1 16 is cooled by the cooling water circulating through the cooling passage 13 formed near the center of 105.
- the inert gas is supplied to the seal member 1 in the gap between the support portion 119 and the rotating shaft 116.
- the cooling passages 13 2 are arranged in a substantially annular shape around the center of the lid 105 so as to surround the rotating shaft 116, and cooling water is supplied from one end thereof and discharged from the other end.
- the vertical heat treatment apparatus is designed to withstand heat treatment at a certain high temperature, for example, about 1000 ° C. Shika, and more When used for heat treatment at a higher temperature, for example, about 1200 ° C., the conventional cooling structure does not provide sufficient cooling. As a result, the bearing 111 and the seal member 118 are damaged, such as galling and seizure between the rotating shaft 116 and the bearing 117 due to thermal expansion. May be caused.
- the rotating shaft 116 is made of a zirconia shaft that is difficult to conduct heat, heat transmitted from the inside of the furnace is easily accumulated and is difficult to cool.
- the gap S between the shaft hole provided in the lid 105 and the rotating shaft 1 16 is large, for example, 1 mm, the rotating shaft 1 16 is sufficiently cooled from the cooling passage 13 2 side. Difficult to do.
- An object of the present invention is to provide a vertical heat treatment apparatus that can sufficiently cool a rotating shaft, can improve the durability of a bearing and a seal member, and can cope with high-temperature heat treatment. And.
- a vertical type in which a rotating mechanism that rotates a holder holding a large number of substrates to be processed is disposed on a liftable lid that opens and closes a furnace port of a vertical heat treatment furnace.
- a heat treatment device is provided, which comprises:
- the rotation mechanism includes: a rotation shaft; and a support portion that rotatably supports the rotation shaft via a bearing and a seal member.
- the rotation shaft has a thin hollow structure and has inner and outer sides.
- the supporting portion has a cooling passage through which a coolant formed so as to surround the upper side of the rotating shaft flows through the cooling gas.
- An airtight processing chamber accommodating the substrate to be processed, and the processing chamber having a load port at a bottom portion,
- a lid for selectively opening and closing the load port of the processing chamber
- An exhaust system that exhausts the processing chamber
- An elevator that raises and lowers the lid while supporting the holder holding the substrate to be processed on the lid;
- An internal gas passage for cooling is formed inside the rotary shaft, and an external gas passage for cooling is formed between the rotary shaft and the support portion.
- An inert gas supply system that supplies an inert gas for cooling to the internal gas passage and the external gas passage;
- the inside of the rotation shaft is vertically divided via a partition wall
- the seal member is disposed outside the rotating shaft and near the partition wall, and the cooling gas flows inside and outside the rotary shaft above the partition wall, and
- the inside of the rotating shaft can be configured to be open to the outside below the wall.
- FIG. 1 is a longitudinal sectional view schematically showing a vertical heat treatment apparatus according to an embodiment of the present invention.
- FIG. 2 is a sectional view showing a rotation mechanism for rotating a wafer boat used in the apparatus shown in FIG.
- FIG. 3 is an enlarged sectional view showing the rotation mechanism shown in FIG.
- 4A, 4B, and 4C are a longitudinal sectional view, a top plan view, and a sectional view taken along the line IVC-IVC in FIG. 4A, showing the rotation axis of the rotation mechanism shown in FIG.
- FIG. 5 is an exploded perspective view showing a relationship between a rotary table and a rotary shaft in the rotary mechanism shown in FIG.
- FIG. 6 is an exploded perspective view showing a cooling passage of the rotation mechanism shown in FIG.
- FIG. 7 is a cross-sectional view showing a conventional rotation mechanism for rotating a wafer port used in a vertical heat treatment apparatus.
- FIG. 1 schematically shows a vertical heat treatment apparatus according to an embodiment of the present invention.
- FIG. 1 schematically shows a vertical heat treatment apparatus according to an embodiment of the present invention.
- FIG. 1 As shown in Fig. 1, vertical heat treatment equipment
- the heat treatment furnace 2 includes a vertically long processing chamber opened as a furnace port (load port) 3 at a lower portion, for example, a single-tube quartz reaction tube 4.
- the furnace B 3 of the reaction tube (processing chamber) 4 is selectively opened and closed by a lid 5 made of e.g.
- the lid 5 is configured to abut the opening end of the furnace B 3 to seal the furnace B 3.
- a heater 6 having a heating resistor is provided on a heater base 8. The heater 6 is controlled so as to heat the inside of the reaction tube (furnace) 4 to a predetermined temperature, for example, 300 to 120 ° C.
- An outward flange 4 a is formed at the lower end of the reaction tube 4.
- the flange portion 4 a is held by the heater base 8 via the flange holding member 7.
- the heater base 8 is provided on the base plate 9 via a support frame 10. An opening is formed in the base plate 9 so that the reaction tube 4 can pass through from below.
- a gas supply system GS including a plurality of gas introduction pipes 11 is connected to a lower portion of the reaction pipe 4 for introducing a processing gas or an inert gas for purging into the reaction pipe 4.
- An exhaust system ES for exhausting the inside of the reaction tube 4 is connected to the lower side of the reaction tube 4 via an exhaust tube 12.
- the wafer port (holding tool) is stacked in a horizontal state and at a distance from each other. It is kept at 1 3.
- the boat 13 has a quartz port main body that holds a large number of wafers W, for example, about 300 mm in diameter, for example, about 25 to 150 wafers W.
- a work area (loading area) LA for transferring the wafer W to the wafer boat 13 is provided below the heat treatment furnace 2.
- An elevating mechanism (elevator) 14 for raising and lowering the lid 6 is provided in the work area LA (only the arm of the elevator 14 supporting the lid 5 is shown in FIG. 1).
- the boat 13 is transported between the work area LA and the reaction tube 4 by the elevator 14 while being supported on the lid 5. That is, the boat 13 is loaded and unloaded to the reaction tube 4 by the elevator 14.
- the cover 5 is provided with a rotation mechanism 15 for rotating the wafer boat 13.
- FIG. 2 is a sectional view showing the rotation mechanism 15.
- FIG. 3 is an enlarged sectional view showing the rotation mechanism 15.
- 4A, 4B, and 4C are a longitudinal sectional view, a top plan view, and a sectional view taken along a line IVC—IVC in FIG. 4A, showing the rotation axis of the rotation mechanism 15.
- FIG. 5 is an exploded perspective view showing the relationship between the rotating table and the rotating shaft in the rotating mechanism 15.
- the rotating mechanism 15 has a rotating shaft 16 and a support (also referred to as a bearing housing) 19 that rotatably supports the rotating shaft 16 via a bearing 17 and a seal member 18.
- the upper end of the rotating shaft 16 penetrates the lid 5 from below and protrudes from the lid 5.
- a rotary table 20 that rotates on the lid 5 is fixed to the upper end of the rotary shaft 16.
- the rotary table 20 is detachably fixed to the lower side It consists of a member 20a and an upper member 20b.
- the boat 13 is placed on the rotary table 20 via a heat insulating cylinder 21 which is a heat insulating means for the furnace B 3.
- the turntable 20 is made of, for example, Inconel. It is desirable that the rotating shaft 16 and the supporting portion 19 are made of, for example, SUS having good heat conductivity.
- the support portion 19 is formed in a cylindrical shape, and its upper end is airtightly fitted into a fitting hole 22 formed vertically through a substantially central portion of the lid 5 and is fixed with screws 23.
- a bearing 17, for example, a ball bearing is disposed between the rotation shaft 16 and the support portion 19 from below a substantially middle portion in the vertical direction.
- An end plate 24 for fixing the bearing 17 is fixed to the lower end of the support portion 19 with a screw 25.
- a nut 26 for fixing the bearing 17, for example, a U-nut (trade name) having a locking function is screwed to the lower side of the rotating shaft 16.
- a sealing member 18 for sealing a gap between the rotating shaft 16 and the support portion 19, for example, an omni-seal (product name) having heat resistance and rotational wear resistance is provided above the bearing 17. Is established.
- This omni-seal is formed by covering a ring-shaped spring having a U-shaped cross section with a cover made of Tefpan (registered trademark).
- Tefpan registered trademark
- the seal member 18 may be an O-ring.
- a driven pulley 27 is attached to the lower end of the rotating shaft 16 that protrudes from the support portion 19 in order to drive the rotating shaft 16 to rotate.
- a timing belt 30 is wound around a driven pulley 27 and a drive pulley 29 attached to a rotating shaft of a motor 28 arranged on the side.
- a sensor 31 for detecting the rotational position of the rotary shaft 16 is provided near the driven pulley 27.
- a structure that cools the rotating shaft 16 is used in order to suppress the thermal effect on the bearing 17 and the sealing member 18 from the inside of the furnace via the rotating shaft 16 and the supporting portion 19.
- the rotating shaft 16 has a thin-walled hollow, and an internal gas passage for cooling is formed inside the rotating shaft 16, while the rotating shaft 16 and the supporting portion 19 are provided between the rotating shaft 16 and the supporting portion 19.
- An external gas passage for cooling is formed.
- the cooling gas flowing through these gas passages is made of, for example, an inert gas such as nitrogen gas N 2 .
- a cooling passage 32 through which a refrigerant such as water or a cooling gas flows is formed in the support portion 19 so as to surround the upper end side of the rotating shaft 16.
- the lid 5 is provided with a cooling passage 58 for cooling the lid 5 itself.
- the inside of the rotary shaft 16 is vertically partitioned via a partition wall 33, and a seal member 18 is provided outside the rotary shaft 16 and near the partition wall 33. Is arranged. Above the partition wall 33, the above-described internal gas passage and external gas passage are formed. Below the partition wall 33, the inside of the rotating shaft 16 is opened to the outside, so that the heat of the rotating shaft 16 is radiated to the outside.
- a flat portion 35 for fixing the rotating table 20 horizontally is formed.
- a shallow insertion hole 36 is formed to insert the upper end of the rotary shaft 16 into the shallow hole.
- a substantially trilobal concave portion 37 is formed to reduce the contact area between the rotary shaft 16 and the rotary table 20.
- the rotary table 20 has screws 3 8 on the flat portions 3 5 at the upper end of the rotary shaft 16. Fixed at.
- the concave portion 37 may be provided in the flat portion 35 at the upper end of the rotating shaft 16.
- the flat part 35 at the upper end of the rotating shaft 16 is formed by the upper end of the upper part 39 welded to the rotating shaft 16.
- a hollow portion 40 is formed above the rotary shaft 16 by the partition wall 33 and the upper part 39 of the hollow rotary shaft 16.
- a concave portion 41 having the same shape as the concave portion 37 of the turntable 20 is provided on a top surface of the hollow portion 40.
- the recess 41 is formed in order to reduce the amount of heat transferred to the rotating shaft 16 via the rotating table 20.
- the upper part 39 may be provided at the upper end of the rotating shaft by a joining means other than welding, for example, by fitting and screwing.
- a plurality of, for example, six gas inlet holes 42 are formed in a portion corresponding to a lower portion of the hollow portion 40 on the outer peripheral portion of the rotating shaft 16.
- a plurality of, for example, three gas outlet holes 43 are respectively provided in a portion corresponding to the upper portion (preferably the concave portion 41) of the hollow portion 40.
- the cooling gas introduced from the gas inlet 45 flows through the hollow portion 40 of the rotating shaft 16 from the inlet hole 42 to the outlet hole 43.
- An annular groove 44 corresponding to the gas inlet hole 42 is formed in the inner peripheral portion of the support portion 19.
- the support portion 19 is provided with one gas inlet 45 for introducing an inert gas, for example, nitrogen gas as a cooling gas into the annular groove 44.
- a gas supply system CGS for supplying nitrogen gas is connected to the gas inlet ports 45 through a gas supply pipe.
- the gap Sa between the rotating shaft 16 and the support portion 19 is ⁇ .1 to 2 mm, Desirably, it is formed as small as 0.2 to 0.8 mm, for example, about 0.42 mm.
- Screws 46 and 47 functioning as convex portions and / or concave portions for heat radiation are formed on opposing surfaces of the cooling passages 32 provided in the rotating shaft 16 and the support portion 19. .
- the screw 46 on the outer periphery of the rotating shaft 16 is, for example, an M30 ⁇ 1.5 male screw.
- the screw 47 on the inner periphery of the holder 19 is made of, for example, an M33 ⁇ 2 female screw. In this way, by using a so-called heat radiation fin as a screw thread, the cooling effect of the rotating shaft 16 is further improved.
- FIG. 6 is a developed perspective view showing the cooling passage 32.
- the cooling passage 32 is desirably formed in a multi-layer structure, for example, a three-layer structure as shown in FIG. That is, the annular passage 3 2 a, which forms the cooling passage 32, 32b and 32c are arranged vertically through a plurality of stages or a plurality of layers, for example, a lower layer, a middle layer, and an upper layer via partitioning portions 62 and 63.
- the lower and middle passages 3 2a and 3 2b are respectively connected to the left passage 32 ax, 32 bx and the right passage 32 ay, 32 by the two front and rear partition walls 49, 50. Divided.
- the upper passage 32c is partitioned by one front partition wall 61 to form a C-shaped passage.
- the upper-layer and middle-layer partitioning portions 63 communicate with the refrigerant by passing the upper-layer passageway 32c and the middle-layer left and right passageways 32bx and 32by near the upper-layer partitioning portion 61.
- the flow holes 51 and 52 for flowing are formed.
- an inlet 55 and an outlet 56 for a coolant are formed. These are connected to the supply pipe and the drain pipe (return pipe) of the refrigerant supply system CLS, respectively. Through the inlet 55 and the outlet 56, cooling water (normal temperature water) is supplied and circulated to the cooling passage 32 as shown by an arrow.
- a small gap S b is formed between the upper surface of the lid 5 and the lower surface of the turntable 20 to allow the inert gas to flow from the center side to the peripheral side.
- An annular gas reservoir 57 is formed between the upper surface of the lid 5 and the lower surface of the rotating tape 20 in the circumferential direction.
- the gas reservoir 57 is formed in a hollow chamber shape by forming corresponding annular grooves on the upper surface of the lid 5 and the lower surface of the turntable 20.
- Rotating shaft 1 6 Inside and outside After passing through the gas passage and the external gas passage, the nitrogen gas flows into the gas reservoir 57 through the gap Sb. Since the nitrogen gas is stored in the gas storage part 57, the processing gas from the furnace is rotated by the rotating shaft 1.
- the vertical heat treatment apparatus 1 rotates a boat 13 in which a large number of wafers W are mounted on a vertically movable lid 5 that opens and closes a furnace 3 of a vertical heat treatment furnace 2. Equipped with a rotation mechanism 15.
- the rotating mechanism 15 has a rotating shaft 16 and a support portion 19 that rotatably supports the rotating shaft 16 via a bearing 17 and a seal member 18.
- the rotating shaft 16 has a thin hollow structure and is configured such that a cooling gas flows inside and outside thereof.
- the support portion 19 has a cooling passage 32 formed so as to surround the upper side of the rotating shaft 16 and through which a coolant, for example, water flows.
- the rotating shaft 16 can be sufficiently cooled, the durability of the bearing 17 and the sealing member 18 can be improved, and it is possible to cope with a heat treatment at a high temperature, for example, about 1200 ° C.
- a heat treatment at a high temperature for example, about 1200 ° C.
- a cooling gas for example, a nitrogen gas, flows inside and outside of the rotary shaft 16 above the partition wall 33.
- the inside of the rotating shaft 16 is opened to the outside below the partition wall 33. Thereby, the rotating shaft 16 can be sufficiently cooled.
- the clearance S a between the rotating shaft 16 and the supporting portion 19 is reduced, and screws 4 which are convex portions and / or concave portions for heat dissipation are provided on the opposing surfaces of the rotating shaft 16 and the supporting portion 19. 6 and 4 7 will be provided. This Therefore, the rotating shaft 16 can be sufficiently cooled from the cooling passage 32 side.
- the cooling passage 32 is arranged in a substantially spiral shape so as to go around the rotating shaft 16. For this reason, the cooling water can be circulated without dripping, and the rotating shaft 16 and the supporting portion 19 can be cooled in a wide range along the longitudinal direction of the rotating shaft 16.
- the cooling passage 32 is divided into a plurality of upper and lower stages, and through holes 51, 52, 53, and 54 for allowing the refrigerant to flow through the partitioning portions 62, 63 of each stage are provided. For this reason, the substantially spiral cooling passage 32 can be easily formed.
- a flat portion 35 for fixing the rotary table 20 is formed at the upper end of the rotary shaft 16. At least one of the flat portion 35 and the rotary table 20 is provided with a concave portion 37 for reducing the contact area. Therefore, heat conduction from the rotary table 20 to the rotary shaft 16 can be suppressed.
- a rotating table 20 that rotates on the lid 5 is connected to the upper end of the rotating shaft 16.
- a part 57 is formed. Therefore, it is possible to prevent the processing gas from being circulated from the furnace with a simple structure, eliminate the need for a complicated labyrinth structure, and reduce the cost.
- wafer boat 13 is made of material other than quartz Material, for example, silicon carbide or polysilicon (Si).
- the reaction tube 4 may have a double tube structure of an inner tube and an outer tube.
- An inert gas is desirable as the cooling gas, but a gas other than the inert gas may be used.
- water is desirable, but a liquid or fluid other than water may be used.
- the vertical heat treatment apparatus is an example to which the present invention is applied, and the present invention can be similarly applied to other types of vertical heat treatment apparatuses.
- the vertical heat treatment apparatus can be configured to perform a process other than the diffusion process, for example, a CVD process (including a reduced pressure type), an oxidation process, and an annealing process.
- a semiconductor wafer has been described as an example of a substrate to be processed, but the present invention can also be applied to an apparatus for processing another substrate such as an LCD substrate. .
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/506,688 US6957956B2 (en) | 2002-04-09 | 2003-03-27 | Vertical heat treating equipment |
EP03715534A EP1498937A1 (en) | 2002-04-09 | 2003-03-27 | Vertical heat treating equipment |
KR1020047009949A KR100668585B1 (ko) | 2002-04-09 | 2003-03-27 | 종형 열 처리 장치 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002107090A JP3369165B1 (ja) | 2002-04-09 | 2002-04-09 | 縦型熱処理装置 |
JP2002-107090 | 2002-04-09 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2003085710A1 true WO2003085710A1 (fr) | 2003-10-16 |
Family
ID=19193840
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2003/003862 WO2003085710A1 (fr) | 2002-04-09 | 2003-03-27 | Equipement de traitement thermique vertical |
Country Status (7)
Country | Link |
---|---|
US (1) | US6957956B2 (ja) |
EP (1) | EP1498937A1 (ja) |
JP (1) | JP3369165B1 (ja) |
KR (1) | KR100668585B1 (ja) |
CN (2) | CN100338735C (ja) |
TW (1) | TWI263281B (ja) |
WO (1) | WO2003085710A1 (ja) |
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CN100358098C (zh) | 2005-08-05 | 2007-12-26 | 中微半导体设备(上海)有限公司 | 半导体工艺件处理装置 |
JP2007251088A (ja) * | 2006-03-20 | 2007-09-27 | Tokyo Electron Ltd | 縦型熱処理装置及び縦型熱処理装置における移載機構の制御方法 |
JP4335908B2 (ja) * | 2006-12-22 | 2009-09-30 | 東京エレクトロン株式会社 | 縦型熱処理装置及び縦型熱処理方法 |
JP4930438B2 (ja) * | 2008-04-03 | 2012-05-16 | 東京エレクトロン株式会社 | 反応管及び熱処理装置 |
JP2010080922A (ja) | 2008-08-29 | 2010-04-08 | Hitachi Kokusai Electric Inc | 基板処理装置及び半導体装置の製造方法 |
JP5131094B2 (ja) * | 2008-08-29 | 2013-01-30 | 東京エレクトロン株式会社 | 熱処理装置及び熱処理方法並びに記憶媒体 |
JP5042950B2 (ja) * | 2008-09-05 | 2012-10-03 | 東京エレクトロン株式会社 | 縦型熱処理装置及び基板支持具 |
JP5134495B2 (ja) * | 2008-10-16 | 2013-01-30 | 東京エレクトロン株式会社 | 処理装置及び処理方法 |
JP5570359B2 (ja) * | 2010-09-10 | 2014-08-13 | キヤノンアネルバ株式会社 | ロータリージョイント、及びスパッタリング装置 |
JP2012204645A (ja) * | 2011-03-25 | 2012-10-22 | Tokyo Electron Ltd | 蓋体開閉装置 |
CN103212891B (zh) * | 2012-01-19 | 2015-11-25 | 昆山思拓机器有限公司 | 集成薄壁管材气动夹持机构的旋转轴装置 |
JP5922534B2 (ja) * | 2012-09-10 | 2016-05-24 | 光洋サーモシステム株式会社 | 熱処理装置 |
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- 2002-04-09 JP JP2002107090A patent/JP3369165B1/ja not_active Expired - Fee Related
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2003
- 2003-03-27 WO PCT/JP2003/003862 patent/WO2003085710A1/ja active Application Filing
- 2003-03-27 US US10/506,688 patent/US6957956B2/en not_active Expired - Lifetime
- 2003-03-27 EP EP03715534A patent/EP1498937A1/en not_active Withdrawn
- 2003-03-27 CN CNB038077493A patent/CN100338735C/zh not_active Expired - Fee Related
- 2003-03-27 KR KR1020047009949A patent/KR100668585B1/ko active IP Right Grant
- 2003-04-03 TW TW092107639A patent/TWI263281B/zh not_active IP Right Cessation
- 2003-04-08 CN CNU032432577U patent/CN2706861Y/zh not_active Expired - Fee Related
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US5324540A (en) * | 1992-08-17 | 1994-06-28 | Tokyo Electron Limited | System and method for supporting and rotating substrates in a process chamber |
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JP2001297987A (ja) * | 2000-04-17 | 2001-10-26 | Rigaku Corp | 軸封装置 |
Also Published As
Publication number | Publication date |
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JP2003303776A (ja) | 2003-10-24 |
TWI263281B (en) | 2006-10-01 |
TW200401377A (en) | 2004-01-16 |
KR100668585B1 (ko) | 2007-01-16 |
KR20040094670A (ko) | 2004-11-10 |
EP1498937A1 (en) | 2005-01-19 |
CN100338735C (zh) | 2007-09-19 |
CN1647250A (zh) | 2005-07-27 |
CN2706861Y (zh) | 2005-06-29 |
US20050175952A1 (en) | 2005-08-11 |
US6957956B2 (en) | 2005-10-25 |
JP3369165B1 (ja) | 2003-01-20 |
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