WO2003036731A1 - Light emitting or light receiving semiconductor module and method for manufacturing the same - Google Patents

Light emitting or light receiving semiconductor module and method for manufacturing the same Download PDF

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Publication number
WO2003036731A1
WO2003036731A1 PCT/JP2001/009234 JP0109234W WO03036731A1 WO 2003036731 A1 WO2003036731 A1 WO 2003036731A1 JP 0109234 W JP0109234 W JP 0109234W WO 03036731 A1 WO03036731 A1 WO 03036731A1
Authority
WO
WIPO (PCT)
Prior art keywords
solar cells
manufacturing
same
semiconductor module
spherical solar
Prior art date
Application number
PCT/JP2001/009234
Other languages
English (en)
French (fr)
Inventor
Josuke Nakata
Original Assignee
Josuke Nakata
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Josuke Nakata filed Critical Josuke Nakata
Priority to JP2003539112A priority Critical patent/JP3904559B2/ja
Priority to PCT/JP2001/009234 priority patent/WO2003036731A1/ja
Priority to AU2001295987A priority patent/AU2001295987B2/en
Priority to US10/492,561 priority patent/US7602035B2/en
Priority to KR1020037005224A priority patent/KR100619614B1/ko
Priority to CA2463981A priority patent/CA2463981C/en
Priority to CNB018202713A priority patent/CN1220277C/zh
Priority to EP01976788A priority patent/EP1445804A4/en
Priority to TW090126553A priority patent/TW512542B/zh
Publication of WO2003036731A1 publication Critical patent/WO2003036731A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
    • B32B17/10005—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
    • B32B17/10009—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the number, the constitution or treatment of glass sheets
    • B32B17/10036—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the number, the constitution or treatment of glass sheets comprising two outer glass sheets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
    • H02S40/20—Optical components
    • H02S40/22—Light-reflecting or light-concentrating means
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2105/00—Planar light sources
    • F21Y2105/10—Planar light sources comprising a two-dimensional array of point-like light-generating elements
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/1017—Shape being a sphere
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Photovoltaic Devices (AREA)
PCT/JP2001/009234 2001-10-19 2001-10-19 Light emitting or light receiving semiconductor module and method for manufacturing the same WO2003036731A1 (en)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP2003539112A JP3904559B2 (ja) 2001-10-19 2001-10-19 発光又は受光用半導体モジュールおよびその製造方法
PCT/JP2001/009234 WO2003036731A1 (en) 2001-10-19 2001-10-19 Light emitting or light receiving semiconductor module and method for manufacturing the same
AU2001295987A AU2001295987B2 (en) 2001-10-19 2001-10-19 Light emitting or light receiving semiconductor module and method for manufacturing the same
US10/492,561 US7602035B2 (en) 2001-10-19 2001-10-19 Light emitting or light receiving semiconductor module and method for manufacturing same
KR1020037005224A KR100619614B1 (ko) 2001-10-19 2001-10-19 발광 또는 수광용 반도체 모듈 및 그 제조 방법
CA2463981A CA2463981C (en) 2001-10-19 2001-10-19 Light-emitting or light-receiving semiconductor module, and method for manufacturing the same
CNB018202713A CN1220277C (zh) 2001-10-19 2001-10-19 发光或感光半导体组件及其制造方法
EP01976788A EP1445804A4 (en) 2001-10-19 2001-10-19 LIGHT EMISSION OR LIGHT RECEPTACLE SEMICONDUCTOR MODULE AND METHOD FOR THE PRODUCTION THEREOF
TW090126553A TW512542B (en) 2001-10-19 2001-10-26 Semiconductor module for light emitting or light receiving, and the manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2001/009234 WO2003036731A1 (en) 2001-10-19 2001-10-19 Light emitting or light receiving semiconductor module and method for manufacturing the same

Publications (1)

Publication Number Publication Date
WO2003036731A1 true WO2003036731A1 (en) 2003-05-01

Family

ID=11737855

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2001/009234 WO2003036731A1 (en) 2001-10-19 2001-10-19 Light emitting or light receiving semiconductor module and method for manufacturing the same

Country Status (9)

Country Link
US (1) US7602035B2 (ja)
EP (1) EP1445804A4 (ja)
JP (1) JP3904559B2 (ja)
KR (1) KR100619614B1 (ja)
CN (1) CN1220277C (ja)
AU (1) AU2001295987B2 (ja)
CA (1) CA2463981C (ja)
TW (1) TW512542B (ja)
WO (1) WO2003036731A1 (ja)

Cited By (19)

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EP1496381A2 (en) * 2003-07-01 2005-01-12 Matsushita Electric Industrial Co., Ltd. Mount assembly, optical transmission line and photoelectric circuit board
JP2005057073A (ja) * 2003-08-05 2005-03-03 Nichia Chem Ind Ltd 発光装置及びその製造方法
EP1553638A1 (en) * 2002-06-21 2005-07-13 Josuke Nakata Light receiving or light emitting device and its production method
US7214557B2 (en) 2003-10-24 2007-05-08 Kyosemi Corporation Light receiving or light emitting modular sheet and process for producing the same
WO2007080631A1 (ja) * 2006-01-11 2007-07-19 Kyosemi Corporation 受光又は発光用半導体モジュール
WO2007144944A1 (ja) * 2006-06-14 2007-12-21 Kyosemi Corporation ロッド形半導体デバイス
WO2008004304A1 (en) * 2006-07-07 2008-01-10 Kyosemi Corporation Panel-shaped semiconductor module
WO2008004277A1 (en) * 2006-07-04 2008-01-10 Kyosemi Corporation Panel-shaped semiconductor module
WO2008018116A1 (en) 2006-08-07 2008-02-14 Kyosemi Corporation Semiconductor module for power generation or light emission
EP1901419A2 (en) 2003-06-09 2008-03-19 Kyosemi Corporation Generator system
WO2008059593A1 (fr) 2006-11-17 2008-05-22 Kyosemi Corporation Dispositif de cellule solaire superposée
US20080198584A1 (en) * 2005-05-17 2008-08-21 Nervecorp Limited Building Structures Having Electrically Functional Architectural Surfaces
JP2008270084A (ja) * 2007-04-24 2008-11-06 Sankyo Denki:Kk 照明装置
WO2010016099A1 (ja) * 2008-08-08 2010-02-11 京セミ株式会社 採光型太陽電池モジュール
WO2010016098A1 (ja) 2008-08-08 2010-02-11 京セミ株式会社 採光型太陽電池モジュール
WO2010070714A1 (ja) * 2008-12-19 2010-06-24 京セミ株式会社 太陽電池モジュール及びその製造方法
JP2011096987A (ja) * 2009-11-02 2011-05-12 Taisei Komu Kk 太陽光発電パネルの診断装置、遮音壁、建造物用の窓ガラス及び乗物用の窓ガラス
US7947894B2 (en) 2006-02-06 2011-05-24 Kyosemi Corporation Light receiving or light emitting semiconductor module
US8154031B2 (en) * 2005-02-28 2012-04-10 Osram Opto Semiconductors Gmbh Module comprising radiation-emitting semiconductor bodies

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WO2003017383A1 (en) * 2001-08-13 2003-02-27 Josuke Nakata Semiconductor device and method of its manufacture
CA2456671C (en) * 2001-08-13 2009-09-22 Josuke Nakata Light emitting or light receiving semiconductor module and making method thereof
AU2001295987B2 (en) 2001-10-19 2005-10-20 Sphelar Power Corporation Light emitting or light receiving semiconductor module and method for manufacturing the same
KR100652916B1 (ko) * 2002-05-02 2006-12-01 죠스케 나카다 수광 또는 발광용 패널 및 그 제조 방법
US7387400B2 (en) * 2003-04-21 2008-06-17 Kyosemi Corporation Light-emitting device with spherical photoelectric converting element
US7858994B2 (en) * 2006-06-16 2010-12-28 Articulated Technologies, Llc Solid state light sheet and bare die semiconductor circuits with series connected bare die circuit elements
AU2006297870B2 (en) * 2005-03-01 2009-04-30 Georgia Tech Research Corporation Three dimensional multi-junction photovoltaic device
JP5171001B2 (ja) * 2005-09-30 2013-03-27 三洋電機株式会社 太陽電池モジュールの製造方法、太陽電池セルおよび太陽電池モジュール
US20070243820A1 (en) 2006-04-18 2007-10-18 O'hagin Carolina Automatic roof ventilation system
US8607510B2 (en) * 2006-10-25 2013-12-17 Gregory S. Daniels Form-fitting solar panel for roofs and roof vents
EP1947693B1 (en) 2007-01-18 2015-03-25 Polytron Technologies, Inc. Plane structure of light-emitting diode lighting apparatus
US8456392B2 (en) * 2007-05-31 2013-06-04 Nthdegree Technologies Worldwide Inc Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system
US20090078303A1 (en) * 2007-09-24 2009-03-26 Solyndra, Inc. Encapsulated Photovoltaic Device Used With A Reflector And A Method of Use for the Same
DE102008005935A1 (de) * 2007-11-29 2009-06-04 Osram Opto Semiconductors Gmbh Halbleiteranordnung sowie Verfahren zur Herstellung einer Halbleiteranordnung
US8153888B2 (en) * 2008-05-01 2012-04-10 Northrop Grumman Systems Corporation Lateral ultra-high efficiency solar cell
DE102008040147A1 (de) * 2008-07-03 2010-01-28 Crystalsol Og Verfahren zur Herstellung einer Monokornmembran für eine Solarzelle sowie Monokornmembran nebst Solarzelle
US20100018567A1 (en) * 2008-07-28 2010-01-28 Toshihiko Sakurai Solar power generating system employing a solar battery
DE102008059728A1 (de) * 2008-12-01 2010-06-02 Fachhochschule Köln Photovoltaik-Schichtanordnung
JP2010287795A (ja) * 2009-06-12 2010-12-24 Sharp Corp 太陽電池モジュールおよびこれを搭載した電子部品、電気部品、電子機器
CN101854133A (zh) * 2010-03-29 2010-10-06 罗宇浩 交流光伏模块以及使用该交流光伏模块的建筑幕墙单元
CN101950772B (zh) * 2010-08-05 2013-01-23 中山大学 一种具有旁路二极管的晶体硅太阳电池的制备方法
US9455307B2 (en) * 2011-10-14 2016-09-27 Diftek Lasers, Inc. Active matrix electro-optical device and method of making thereof
CN103165694B (zh) * 2011-12-09 2016-11-23 聚日（苏州）科技有限公司 一种太阳能电池组件及其制造方法
CN103187456B (zh) * 2011-12-29 2015-08-26 清华大学 太阳能电池
CN103187453B (zh) * 2011-12-29 2016-04-13 清华大学 太阳能电池
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US7602035B2 (en) 2009-10-13
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EP1445804A4 (en) 2008-03-05
JP3904559B2 (ja) 2007-04-11

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