EP1255303A4 - Light-emitting or light-detecting semiconductor module and method of manufacture thereof - Google Patents

Light-emitting or light-detecting semiconductor module and method of manufacture thereof

Info

Publication number
EP1255303A4
EP1255303A4 EP00969976A EP00969976A EP1255303A4 EP 1255303 A4 EP1255303 A4 EP 1255303A4 EP 00969976 A EP00969976 A EP 00969976A EP 00969976 A EP00969976 A EP 00969976A EP 1255303 A4 EP1255303 A4 EP 1255303A4
Authority
EP
European Patent Office
Prior art keywords
light
semiconductor module
emitting
manufacture
semiconductor devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP00969976A
Other languages
German (de)
French (fr)
Other versions
EP1255303B1 (en
EP1255303A1 (en
Inventor
Josuke Nakata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SPHELAR POWER Corp
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to EP06000575.8A priority Critical patent/EP1646089B1/en
Publication of EP1255303A1 publication Critical patent/EP1255303A1/en
Publication of EP1255303A4 publication Critical patent/EP1255303A4/en
Application granted granted Critical
Publication of EP1255303B1 publication Critical patent/EP1255303B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02002—Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
    • H01L31/0201—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising specially adapted module bus-bar structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Manufacturing & Machinery (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Light Receiving Elements (AREA)

Abstract

A semiconductor module (20) comprises 25 light-detecting semiconductor devices (10), for example, connected in a 5 5 matrix using a connecting member consisting of 6 conducting lead frames (29); a transparent material (31) in which the semiconductor devices and the connecting member are buried; and negative and positive terminals (33, 34). In the matrix, the semiconductor devices (10) in each column are connected in series and the semiconductor devices (10) in each row are connected in parallel. The semiconductor device (10) has first and second flat sides that are provided with negative and positive electrodes (9a, 9b), respectively.
EP00969976.0A 2000-10-20 2000-10-20 Light-emitting or light-detecting semiconductor module and method of manufacture thereof Expired - Lifetime EP1255303B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP06000575.8A EP1646089B1 (en) 2000-10-20 2000-10-20 Light-emitting or light-receiving semiconductor module and method for making the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2000/007360 WO2002035613A1 (en) 2000-10-20 2000-10-20 Light-emitting or light-detecting semiconductor module and method of manufacture thereof

Related Child Applications (2)

Application Number Title Priority Date Filing Date
EP06000575.8A Division EP1646089B1 (en) 2000-10-20 2000-10-20 Light-emitting or light-receiving semiconductor module and method for making the same
EP06000575.8A Division-Into EP1646089B1 (en) 2000-10-20 2000-10-20 Light-emitting or light-receiving semiconductor module and method for making the same

Publications (3)

Publication Number Publication Date
EP1255303A1 EP1255303A1 (en) 2002-11-06
EP1255303A4 true EP1255303A4 (en) 2005-11-16
EP1255303B1 EP1255303B1 (en) 2016-06-29

Family

ID=11736612

Family Applications (2)

Application Number Title Priority Date Filing Date
EP00969976.0A Expired - Lifetime EP1255303B1 (en) 2000-10-20 2000-10-20 Light-emitting or light-detecting semiconductor module and method of manufacture thereof
EP06000575.8A Expired - Lifetime EP1646089B1 (en) 2000-10-20 2000-10-20 Light-emitting or light-receiving semiconductor module and method for making the same

Family Applications After (1)

Application Number Title Priority Date Filing Date
EP06000575.8A Expired - Lifetime EP1646089B1 (en) 2000-10-20 2000-10-20 Light-emitting or light-receiving semiconductor module and method for making the same

Country Status (10)

Country Link
US (1) US7205626B1 (en)
EP (2) EP1255303B1 (en)
JP (1) JP4307834B2 (en)
KR (1) KR100549250B1 (en)
CN (1) CN1182589C (en)
AU (1) AU773471B2 (en)
CA (2) CA2393222C (en)
HK (1) HK1083706A1 (en)
TW (1) TW466786B (en)
WO (1) WO2002035613A1 (en)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003017382A1 (en) * 2001-08-13 2003-02-27 Josuke Nakata Light-emitting or light-receiving semiconductor module and method of its manufacture
AU2001277779B2 (en) 2001-08-13 2005-04-07 Sphelar Power Corporation Semiconductor device and method of its manufacture
AU2001295987B2 (en) 2001-10-19 2005-10-20 Sphelar Power Corporation Light emitting or light receiving semiconductor module and method for manufacturing the same
WO2003056633A1 (en) * 2001-12-25 2003-07-10 Josuke Nakata Light receiving or emitting semiconductor apparatus
US7238966B2 (en) 2002-05-02 2007-07-03 Josuke Nakata Light-receiving panel or light-emitting panel, and manufacturing method thereof
CN100380685C (en) * 2002-06-21 2008-04-09 中田仗祐 Light-emitting device and its prodn. method
US6897085B2 (en) * 2003-01-21 2005-05-24 Spheral Solar Power, Inc. Method of fabricating an optical concentrator for a photovoltaic solar cell
US7387400B2 (en) 2003-04-21 2008-06-17 Kyosemi Corporation Light-emitting device with spherical photoelectric converting element
AU2003242109A1 (en) 2003-06-09 2005-01-04 Kyosemi Corporation Generator system
JP4510532B2 (en) * 2003-07-01 2010-07-28 パナソニック株式会社 Mounted body, optical transmission line and photoelectric circuit board
WO2005041312A1 (en) 2003-10-24 2005-05-06 Kyosemi Corporation Light receiving or light emitting modular sheet and process for producing the same
CN100358161C (en) * 2003-11-01 2007-12-26 鸿富锦精密工业（深圳）有限公司 Dye sensitized solar cell and its battery
JP2005191530A (en) * 2003-12-03 2005-07-14 Sumitomo Electric Ind Ltd Light emitting device
AU2006335660B2 (en) 2006-01-11 2012-01-19 Sphelar Power Corporation Semiconductor module for light reception or light emission
AU2006337843B2 (en) * 2006-02-06 2011-06-23 Sphelar Power Corporation Light receiving or emitting semiconductor module
CA2657964C (en) * 2006-06-14 2014-09-23 Kyosemi Corporation Rod-shaped semiconductor device
KR100996048B1 (en) * 2006-07-04 2010-11-22 교세미 가부시키가이샤 Panel-shaped semiconductor module
US8053663B2 (en) 2006-07-07 2011-11-08 Kyosemi Corporation Panel-shaped semiconductor module
KR101217039B1 (en) 2006-08-07 2013-01-11 교세미 가부시키가이샤 Semiconductor module for power generation or light emission
EP2083450A1 (en) 2006-11-17 2009-07-29 Kyosemi Corporation Stacked solar cell device
JP5138976B2 (en) * 2007-05-23 2013-02-06 京セミ株式会社 Light receiving or light emitting device
JP4758976B2 (en) * 2007-12-03 2011-08-31 日立ケーブルプレシジョン株式会社 Lead frame for mounting semiconductor light emitting device, method for manufacturing the same, and light emitting device
US8212139B2 (en) 2008-01-18 2012-07-03 Tenksolar, Inc. Thin-film photovoltaic module
US8748727B2 (en) * 2008-01-18 2014-06-10 Tenksolar, Inc. Flat-plate photovoltaic module
US8933320B2 (en) 2008-01-18 2015-01-13 Tenksolar, Inc. Redundant electrical architecture for photovoltaic modules
JP5180306B2 (en) * 2008-08-08 2013-04-10 京セミ株式会社 Daylighting type solar cell module
EP2320471A4 (en) * 2008-08-08 2015-11-04 Sphelar Power Corp Daylighting solar battery module
US9608149B2 (en) 2008-12-19 2017-03-28 Sphelar Power Corporation Solar cell module and method for producing the same
WO2010148009A2 (en) 2009-06-15 2010-12-23 Tenksolar, Inc. Illumination agnostic solar panel
EP2474045A4 (en) * 2009-08-31 2013-06-12 Byd Co Ltd Solar battery assembly
US9773933B2 (en) 2010-02-23 2017-09-26 Tenksolar, Inc. Space and energy efficient photovoltaic array
US8829330B2 (en) 2010-02-23 2014-09-09 Tenksolar, Inc. Highly efficient solar arrays
US9299861B2 (en) 2010-06-15 2016-03-29 Tenksolar, Inc. Cell-to-grid redundandt photovoltaic system
WO2013053052A1 (en) * 2011-10-14 2013-04-18 Diftek Lasers, Inc. Planarized semiconductor particles positioned on a substrate
US9209019B2 (en) 2013-09-05 2015-12-08 Diftek Lasers, Inc. Method and system for manufacturing a semi-conducting backplane
US9455307B2 (en) 2011-10-14 2016-09-27 Diftek Lasers, Inc. Active matrix electro-optical device and method of making thereof
WO2013066998A1 (en) * 2011-10-31 2013-05-10 Tenksolar Inc. Cell-to-grid redundant photovoltaic system
US9593053B1 (en) 2011-11-14 2017-03-14 Hypersolar, Inc. Photoelectrosynthetically active heterostructures
US10100415B2 (en) 2014-03-21 2018-10-16 Hypersolar, Inc. Multi-junction artificial photosynthetic cell with enhanced photovoltages
JP6582187B2 (en) * 2015-03-12 2019-10-02 松文産業株式会社 Fiber structure with semiconductor element
US10312310B2 (en) 2016-01-19 2019-06-04 Diftek Lasers, Inc. OLED display and method of fabrication thereof
JP6857517B2 (en) * 2016-06-16 2021-04-14 ディフテック レーザーズ インコーポレイテッド How to make crystalline islands on a substrate
KR102500233B1 (en) 2021-11-12 2023-02-16 (주)소프트피브이 Semiconductor packaging including photovoltaic particles having a core-shell structure

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3433676A (en) * 1964-10-21 1969-03-18 Gen Motors Corp Thermophotovoltaic energy convertor with photocell mount
US3616528A (en) * 1968-11-15 1971-11-02 Nasa Solid state matrices
US3984256A (en) * 1975-04-25 1976-10-05 Nasa Photovoltaic cell array
JPS55149978A (en) * 1979-05-11 1980-11-21 Tokyo Shibaura Electric Co Display unit
JPS5895889A (en) * 1981-12-02 1983-06-07 Mitsubishi Electric Corp Semiconductor light emitting element array
JPS6175567A (en) * 1984-09-20 1986-04-17 Sanyo Electric Co Ltd Photovoltaic device
US4836861A (en) * 1987-04-24 1989-06-06 Tactical Fabs, Inc. Solar cell and cell mount
US4913744A (en) * 1987-01-13 1990-04-03 Helmut Hoegl Solar cell arrangement
US5469020A (en) * 1994-03-14 1995-11-21 Massachusetts Institute Of Technology Flexible large screen display having multiple light emitting elements sandwiched between crossed electrodes
US5538902A (en) * 1993-06-29 1996-07-23 Sanyo Electric Co., Ltd. Method of fabricating a photovoltaic device having a three-dimensional shape
WO1997041605A1 (en) * 1996-04-30 1997-11-06 Schueren Julian Solar generator
WO1998036461A1 (en) * 1997-02-14 1998-08-20 David Oberman Optoelectronic semiconductor diodes and devices comprising same
EP0982780A1 (en) * 1998-01-23 2000-03-01 NAKATA, Josuke Solar battery module for optical electrolysis device and optical electrolysis device

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3038952A (en) * 1959-05-20 1962-06-12 Hoffman Electronics Corp Method of making a solar cell panel
US3350775A (en) * 1963-10-03 1967-11-07 Hoffman Electronics Corp Process of making solar cells or the like
US3849880A (en) * 1969-12-12 1974-11-26 Communications Satellite Corp Solar cell array
US3998659A (en) 1974-01-28 1976-12-21 Texas Instruments Incorporated Solar cell with semiconductor particles and method of fabrication
JPS516686A (en) * 1974-07-08 1976-01-20 Hitachi Ltd
JPS5328751B2 (en) * 1974-11-27 1978-08-16
US4021323A (en) 1975-07-28 1977-05-03 Texas Instruments Incorporated Solar energy conversion
JPS59500690A (en) * 1982-04-27 1984-04-19 ジ・オ−ストラリアン・ナシヨナル・ユニバ−シテイ Polarized energy generating element array
US4691076A (en) * 1984-09-04 1987-09-01 Texas Instruments Incorporated Solar array with aluminum foil matrix
JPH0671062B2 (en) * 1989-08-30 1994-09-07 株式会社東芝 Resin-sealed semiconductor device
JPH04293261A (en) * 1991-03-22 1992-10-16 Fuji Electric Co Ltd Semiconductor device
JPH0536997A (en) * 1991-07-26 1993-02-12 Sanyo Electric Co Ltd Photovoltaic device
US5428249A (en) * 1992-07-15 1995-06-27 Canon Kabushiki Kaisha Photovoltaic device with improved collector electrode
JPH09162434A (en) * 1995-12-05 1997-06-20 Hitachi Ltd Solar battery and its manufacture
JP3231244B2 (en) 1996-07-22 2001-11-19 仗祐 中田 Method for producing spherical material made of inorganic material and apparatus for producing the same
CA2239626C (en) 1996-10-09 2003-09-02 Josuke Nakata Semiconductor device
EP0940860B1 (en) 1997-08-27 2003-10-15 Josuke Nakata Spheric semiconductor device, method for manufacturing the same, and spheric semiconductor device material
US6355873B1 (en) * 2000-06-21 2002-03-12 Ball Semiconductor, Inc. Spherical shaped solar cell fabrication and panel assembly

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3433676A (en) * 1964-10-21 1969-03-18 Gen Motors Corp Thermophotovoltaic energy convertor with photocell mount
US3616528A (en) * 1968-11-15 1971-11-02 Nasa Solid state matrices
US3984256A (en) * 1975-04-25 1976-10-05 Nasa Photovoltaic cell array
JPS55149978A (en) * 1979-05-11 1980-11-21 Tokyo Shibaura Electric Co Display unit
JPS5895889A (en) * 1981-12-02 1983-06-07 Mitsubishi Electric Corp Semiconductor light emitting element array
JPS6175567A (en) * 1984-09-20 1986-04-17 Sanyo Electric Co Ltd Photovoltaic device
US4913744A (en) * 1987-01-13 1990-04-03 Helmut Hoegl Solar cell arrangement
US4836861A (en) * 1987-04-24 1989-06-06 Tactical Fabs, Inc. Solar cell and cell mount
US5538902A (en) * 1993-06-29 1996-07-23 Sanyo Electric Co., Ltd. Method of fabricating a photovoltaic device having a three-dimensional shape
US5469020A (en) * 1994-03-14 1995-11-21 Massachusetts Institute Of Technology Flexible large screen display having multiple light emitting elements sandwiched between crossed electrodes
WO1997041605A1 (en) * 1996-04-30 1997-11-06 Schueren Julian Solar generator
WO1998036461A1 (en) * 1997-02-14 1998-08-20 David Oberman Optoelectronic semiconductor diodes and devices comprising same
EP0982780A1 (en) * 1998-01-23 2000-03-01 NAKATA, Josuke Solar battery module for optical electrolysis device and optical electrolysis device

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 0071, no. 94 (E - 195) 24 August 1983 (1983-08-24) *
PATENT ABSTRACTS OF JAPAN vol. 0102, no. 44 (E - 430) 22 August 1986 (1986-08-22) *
See also references of WO0235613A1 *

Also Published As

Publication number Publication date
CN1182589C (en) 2004-12-29
TW466786B (en) 2001-12-01
KR100549250B1 (en) 2006-02-03
EP1646089A3 (en) 2006-04-26
KR20020069350A (en) 2002-08-30
CA2671924A1 (en) 2002-05-02
AU7953400A (en) 2002-05-06
AU773471B2 (en) 2004-05-27
US7205626B1 (en) 2007-04-17
CN1373906A (en) 2002-10-09
EP1646089A2 (en) 2006-04-12
JP4307834B2 (en) 2009-08-05
EP1646089B1 (en) 2016-06-29
CA2671924C (en) 2013-06-11
WO2002035613A1 (en) 2002-05-02
CA2393222C (en) 2010-03-09
EP1255303B1 (en) 2016-06-29
CA2393222A1 (en) 2002-05-02
JPWO2002035613A1 (en) 2004-03-04
HK1083706A1 (en) 2006-07-07
EP1255303A1 (en) 2002-11-06

Similar Documents

Publication Publication Date Title
EP1255303A4 (en) Light-emitting or light-detecting semiconductor module and method of manufacture thereof
EP1396676A3 (en) Serially connecting OLED devices for area illumination
CA2483645A1 (en) Light-receiving or light-emitting device and its production method
CA2483363A1 (en) Light-receiving or light-emitting panel, and manufacturing method thereof
EP1427026A4 (en) Light-emitting or light-receiving semiconductor module and method of its manufacture
EP1418609A3 (en) Display
WO2005050701A8 (en) Stressed semiconductor device structures having granular semiconductor material
EP1258922A3 (en) Organic electroluminescent display with integrated resistive touch screen
WO2001073735A3 (en) Matrix structure based led array
TW200731863A (en) Light emitting device with light emitting cells arrayed
EP0883191A3 (en) Electroluminescence device, electroluminescence apparatus, and production methods thereof
EP1427027A4 (en) Semiconductor device and method of its manufacture
EP0320089A3 (en) Interconnected semiconductor devices
WO2005021671A3 (en) Use of an adhesive film for implanting electric modules into a card body
EP1220278A3 (en) Flat panel display device
ATE444572T1 (en) GALVANIC ELEMENT WITH THIN ELECTRODES
AU2002252197A1 (en) Separating of optical integrated modules and structures formed thereby
WO2002076164A3 (en) Electronic module with fluid dissociation electrodes and methods
DE60231290D1 (en) PHOTOELECTRIC IMPLEMENTATION ELEMENT WITH PIGMENTSENSIBILIZATION
TW200638104A (en) Method for manufacturing liquid-crystal display device
EP1432036A3 (en) Semiconductor device and sustaining circuit
AU2003211282A1 (en) Plate-shaped silicon manufacturing method, substrate for manufacturing plate-shaped silicon, plate-shaped silicon, solar cell using the plate-shaped silicon, and solar cell module
TW200729204A (en) Semiconductor memory device and electronic apparatus
WO2009130164A3 (en) Photovoltaic device
EP1333461A3 (en) Method of manufacturing plasma display device

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20020619

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): DE FR GB IT NL SE

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: NAKATA, JOSUKE

RIN1 Information on inventor provided before grant (corrected)

Inventor name: NAKATA, JOSUKE

RIC1 Information provided on ipc code assigned before grant

Ipc: 7H 01L 25/075 B

Ipc: 7H 01L 31/042 A

Ipc: 7H 01L 25/04 B

Ipc: 7H 01L 33/00 B

A4 Supplementary search report drawn up and despatched

Effective date: 20051004

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: KYOSEMI CORPORATION

RIN1 Information on inventor provided before grant (corrected)

Inventor name: NAKATA, JOSUKE

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: SPHELAR POWER CORPORATION

REG Reference to a national code

Ref country code: DE

Ref legal event code: R079

Ref document number: 60049370

Country of ref document: DE

Free format text: PREVIOUS MAIN CLASS: H01L0031042000

Ipc: H01L0025075000

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

INTG Intention to grant announced

Effective date: 20160204

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 33/24 20100101ALN20160125BHEP

Ipc: H01L 31/042 20060101ALI20160125BHEP

Ipc: H01L 33/20 20100101ALN20160125BHEP

Ipc: H01L 33/62 20100101ALN20160125BHEP

Ipc: H01L 25/075 20060101AFI20160125BHEP

Ipc: H01L 31/05 20060101ALN20160125BHEP

Ipc: H01L 31/0352 20060101ALN20160125BHEP

GRAS Grant fee paid

Free format text: ORIGINAL CODE: EPIDOSNIGR3

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): DE FR GB IT NL SE

REG Reference to a national code

Ref country code: GB

Ref legal event code: FG4D

REG Reference to a national code

Ref country code: DE

Ref legal event code: R096

Ref document number: 60049370

Country of ref document: DE

REG Reference to a national code

Ref country code: NL

Ref legal event code: FP

REG Reference to a national code

Ref country code: FR

Ref legal event code: PLFP

Year of fee payment: 17

REG Reference to a national code

Ref country code: SE

Ref legal event code: TRGR

REG Reference to a national code

Ref country code: DE

Ref legal event code: R097

Ref document number: 60049370

Country of ref document: DE

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed

Effective date: 20170330

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

REG Reference to a national code

Ref country code: FR

Ref legal event code: PLFP

Year of fee payment: 18

REG Reference to a national code

Ref country code: FR

Ref legal event code: PLFP

Year of fee payment: 19

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: FR

Payment date: 20180913

Year of fee payment: 19

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: NL

Payment date: 20181017

Year of fee payment: 19

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: SE

Payment date: 20181011

Year of fee payment: 19

Ref country code: DE

Payment date: 20181009

Year of fee payment: 19

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: IT

Payment date: 20181018

Year of fee payment: 19

Ref country code: GB

Payment date: 20181017

Year of fee payment: 19

REG Reference to a national code

Ref country code: DE

Ref legal event code: R119

Ref document number: 60049370

Country of ref document: DE

REG Reference to a national code

Ref country code: NL

Ref legal event code: MM

Effective date: 20191101

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20200501

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: NL

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20191101

Ref country code: SE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20191021

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 20191020

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20191020

Ref country code: IT

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20191020

Ref country code: FR

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20191031