WO2003021666A1 - Nonvolatile storage device and semiconductor integrated circuit - Google Patents

Nonvolatile storage device and semiconductor integrated circuit Download PDF

Info

Publication number
WO2003021666A1
WO2003021666A1 PCT/JP2002/006710 JP0206710W WO03021666A1 WO 2003021666 A1 WO2003021666 A1 WO 2003021666A1 JP 0206710 W JP0206710 W JP 0206710W WO 03021666 A1 WO03021666 A1 WO 03021666A1
Authority
WO
WIPO (PCT)
Prior art keywords
film
silicon nitride
oxide film
nitride film
storage device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2002/006710
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
Shoji Shukuri
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
Hitachi Ltd
Original Assignee
Renesas Technology Corp
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp, Hitachi Ltd filed Critical Renesas Technology Corp
Publication of WO2003021666A1 publication Critical patent/WO2003021666A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0413—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having charge-trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
    • H10D30/685—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection from the channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/037—Manufacture or treatment of data-storage electrodes comprising charge-trapping insulators

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
PCT/JP2002/006710 2001-08-28 2002-07-03 Nonvolatile storage device and semiconductor integrated circuit Ceased WO2003021666A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001-257698 2001-08-28
JP2001257698A JP2003068893A (ja) 2001-08-28 2001-08-28 不揮発性記憶素子及び半導体集積回路

Publications (1)

Publication Number Publication Date
WO2003021666A1 true WO2003021666A1 (en) 2003-03-13

Family

ID=19085320

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/006710 Ceased WO2003021666A1 (en) 2001-08-28 2002-07-03 Nonvolatile storage device and semiconductor integrated circuit

Country Status (3)

Country Link
JP (1) JP2003068893A (enExample)
TW (1) TW584943B (enExample)
WO (1) WO2003021666A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7045848B2 (en) 2002-04-18 2006-05-16 Renesas Technology Corp. Semiconductor integrated circuit device and a method of manufacturing the same
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100446632B1 (ko) * 2002-10-14 2004-09-04 삼성전자주식회사 비휘발성 ｓｏｎｓｎｏｓ 메모리
KR100474850B1 (ko) * 2002-11-15 2005-03-11 삼성전자주식회사 수직 채널을 가지는 비휘발성 ｓｏｎｏｓ 메모리 및 그 제조방법
US7133313B2 (en) * 2004-04-26 2006-11-07 Macronix International Co., Ltd. Operation scheme with charge balancing for charge trapping non-volatile memory
US7075828B2 (en) * 2004-04-26 2006-07-11 Macronix International Co., Intl. Operation scheme with charge balancing erase for charge trapping non-volatile memory
JP2006196643A (ja) * 2005-01-13 2006-07-27 Renesas Technology Corp 不揮発性半導体記憶装置
JP2006245415A (ja) 2005-03-04 2006-09-14 Sharp Corp 半導体記憶装置及びその製造方法、並びに携帯電子機器
US7612403B2 (en) * 2005-05-17 2009-11-03 Micron Technology, Inc. Low power non-volatile memory and gate stack
US8101989B2 (en) * 2006-11-20 2012-01-24 Macronix International Co., Ltd. Charge trapping devices with field distribution layer over tunneling barrier
KR100815968B1 (ko) * 2007-05-17 2008-03-24 주식회사 동부하이텍 반도체 소자 제조 방법
US8252653B2 (en) 2008-10-21 2012-08-28 Applied Materials, Inc. Method of forming a non-volatile memory having a silicon nitride charge trap layer
US8198671B2 (en) 2009-04-22 2012-06-12 Applied Materials, Inc. Modification of charge trap silicon nitride with oxygen plasma
US8987098B2 (en) 2012-06-19 2015-03-24 Macronix International Co., Ltd. Damascene word line
JP5586666B2 (ja) 2012-08-01 2014-09-10 力晶科技股▲ふん▼有限公司 不揮発性半導体記憶装置とその読み出し方法
US9379126B2 (en) 2013-03-14 2016-06-28 Macronix International Co., Ltd. Damascene conductor for a 3D device
US9099538B2 (en) 2013-09-17 2015-08-04 Macronix International Co., Ltd. Conductor with a plurality of vertical extensions for a 3D device
US9559113B2 (en) 2014-05-01 2017-01-31 Macronix International Co., Ltd. SSL/GSL gate oxide in 3D vertical channel NAND

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4886485A (enExample) * 1972-02-17 1973-11-15
JPS4913118B1 (enExample) * 1970-02-05 1974-03-29
JPS5357771A (en) * 1976-11-04 1978-05-25 Sony Corp Non-volatile memory transistor
US5619051A (en) * 1994-06-27 1997-04-08 Nec Corporation Semiconductor nonvolatile memory cell
JPH09205155A (ja) * 1996-01-25 1997-08-05 Sony Corp 半導体記憶装置の製造方法
JP2000030471A (ja) * 1998-07-14 2000-01-28 Toshiba Microelectronics Corp 不揮発性半導体メモリ
JP2000049241A (ja) * 1998-07-28 2000-02-18 Matsushita Electron Corp 半導体メモリ装置およびその製造方法
EP1058298A1 (en) * 1999-06-03 2000-12-06 Mitsubishi Denki K.K. Method of manufacturing a semiconductor memory device having a capacitor
US6278635B1 (en) * 1999-12-03 2001-08-21 Nec Corporation Storage method of semiconductor storage apparatus
JP2002184873A (ja) * 2000-10-03 2002-06-28 Sony Corp 不揮発性半導体記憶装置及びその製造方法

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4913118B1 (enExample) * 1970-02-05 1974-03-29
JPS4886485A (enExample) * 1972-02-17 1973-11-15
JPS5357771A (en) * 1976-11-04 1978-05-25 Sony Corp Non-volatile memory transistor
US5619051A (en) * 1994-06-27 1997-04-08 Nec Corporation Semiconductor nonvolatile memory cell
JPH09205155A (ja) * 1996-01-25 1997-08-05 Sony Corp 半導体記憶装置の製造方法
JP2000030471A (ja) * 1998-07-14 2000-01-28 Toshiba Microelectronics Corp 不揮発性半導体メモリ
JP2000049241A (ja) * 1998-07-28 2000-02-18 Matsushita Electron Corp 半導体メモリ装置およびその製造方法
EP1058298A1 (en) * 1999-06-03 2000-12-06 Mitsubishi Denki K.K. Method of manufacturing a semiconductor memory device having a capacitor
US6278635B1 (en) * 1999-12-03 2001-08-21 Nec Corporation Storage method of semiconductor storage apparatus
JP2002184873A (ja) * 2000-10-03 2002-06-28 Sony Corp 不揮発性半導体記憶装置及びその製造方法

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7045848B2 (en) 2002-04-18 2006-05-16 Renesas Technology Corp. Semiconductor integrated circuit device and a method of manufacturing the same
US8507975B2 (en) 2002-04-18 2013-08-13 Renesas Electronics Corporation Semiconductor integrated circuit device and a method of manufacturing the same
US7326616B2 (en) 2002-04-18 2008-02-05 Renesas Technology Corp. Semiconductor integrated circuit device and a method of manufacturing the same
US7525145B2 (en) 2002-04-18 2009-04-28 Renesas Technology Corp. Semiconductor integrated circuit device and a method of manufacturing the same
US7544988B2 (en) 2002-04-18 2009-06-09 Renesas Technology Corp. Semiconductor integrated circuit device and a method of manufacturing the same
US7807530B2 (en) 2002-04-18 2010-10-05 Renesas Electronics Corporation Semiconductor integrated circuit device and a method of manufacturing the same
US7952135B2 (en) 2002-04-18 2011-05-31 Renesas Electronics Corporation Semiconductor integrated circuit device and a method of manufacturing the same
US8222686B2 (en) 2002-04-18 2012-07-17 Renesas Electronics Corporation Semiconductor integrated circuit device and a method of manufacturing the same
US7067373B2 (en) 2002-04-18 2006-06-27 Renesas Technology Corp. Semiconductor integrated circuit device and a method of manufacturing the same
US8674432B2 (en) 2002-04-18 2014-03-18 Renesas Electronics Corporation Semiconductor integrated circuit device and a method of manufacturing the same
US10014312B2 (en) 2002-04-18 2018-07-03 Renesas Electronics Corporation Semiconductor integrated circuit device and a method of manufacturing the same
US8907404B2 (en) 2002-04-18 2014-12-09 Renesas Electronics Corporation Semiconductor integrated circuit device and a method of manufacturing the same
US10332901B2 (en) 2002-04-18 2019-06-25 Renesas Electronics Corporation Semiconductor integrated circuit device and a method of manufacturing the same
US9093320B2 (en) 2002-04-18 2015-07-28 Renesas Electronic Corporation Semiconductor integrated circuit device and a method of manufacturing the same
US9324723B2 (en) 2002-04-18 2016-04-26 Renesas Electronics Corporation Semiconductor integrated circuit device and a method of manufacturing the same
US9502430B2 (en) 2002-04-18 2016-11-22 Renesas Electronics Corporation Semiconductor integrated circuit device and a method of manufacturing the same
US9735168B2 (en) 2002-04-18 2017-08-15 Renesas Electronics Corporation Semiconductor integrated circuit device and a method of manufacturing the same
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
US9030877B2 (en) 2007-08-30 2015-05-12 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device

Also Published As

Publication number Publication date
TW584943B (en) 2004-04-21
JP2003068893A (ja) 2003-03-07

Similar Documents

Publication Publication Date Title
WO2003021666A1 (en) Nonvolatile storage device and semiconductor integrated circuit
US6462372B1 (en) Scaled stack-gate flash memory device
TWI462277B (zh) 非揮發性半導體記憶元件、非揮發性記憶體串列及非揮發性記憶體陣列
US6204126B1 (en) Method to fabricate a new structure with multi-self-aligned for split-gate flash
US7960792B2 (en) Non-volatile memory with a stable threshold voltage on SOI substrate
US7626226B2 (en) Method for improving erase saturation in non-volatile memory devices and devices obtained thereof
TW495977B (en) Erasing method for p-channel silicon nitride read only memory
US8466505B2 (en) Multi-level flash memory cell capable of fast programming
US20100155858A1 (en) Asymmetric extension device
TW200304698A (en) SONOS component having high dielectric property
JP2005537662A (ja) 高誘電率の上部誘電体を有する誘電体蓄積メモリセル（ｍｏｎｏｓ）およびそのための方法
US8278169B2 (en) Semiconductor device and a method of manufacturing the same
WO2004019373A3 (en) Nanocrystal electron device
CN100533772C (zh) 耦合率增大的浮栅存储单元
US20030062567A1 (en) Non volatile dielectric memory cell structure with high dielectric constant capacitive coupling layer
US6809374B2 (en) Nonvolatile memory device
JPH06302828A (ja) 半導体不揮発性記憶装置
EP1369926A3 (en) Ferroelectric memory transistor and method for forming the same
US8295094B2 (en) Method of operating non-volatile memory cell
EP1191604A3 (en) Semiconductor memory device
Han et al. A bulk FinFET unified-RAM (URAM) cell for multifunctioning NVM and capacitorless 1T-DRAM
US7262992B2 (en) Hearing aid
JP2004221448A (ja) 不揮発性半導体記憶装置およびその製造方法
TW519734B (en) Programming and erasing methods of non-volatile memory having nitride tunneling layer
US6274418B1 (en) Method of manufacturing flash memory cell

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): CN KR SG US

Kind code of ref document: A1

Designated state(s): CN KR SG

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FR GB GR IE IT LU MC NL PT SE SK TR

Kind code of ref document: A1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LU MC NL PT SE SK TR

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
121 Ep: the epo has been informed by wipo that ep was designated in this application
122 Ep: pct application non-entry in european phase