TW584943B - Nonvolatile storage device and semiconductor integrated circuit - Google Patents

Nonvolatile storage device and semiconductor integrated circuit Download PDF

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Publication number
TW584943B
TW584943B TW091117013A TW91117013A TW584943B TW 584943 B TW584943 B TW 584943B TW 091117013 A TW091117013 A TW 091117013A TW 91117013 A TW91117013 A TW 91117013A TW 584943 B TW584943 B TW 584943B
Authority
TW
Taiwan
Prior art keywords
film
insulating film
semiconductor
region
volatile memory
Prior art date
Application number
TW091117013A
Other languages
English (en)
Chinese (zh)
Inventor
Shoji Shukuri
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of TW584943B publication Critical patent/TW584943B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0413—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having charge-trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
    • H10D30/685—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection from the channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/037—Manufacture or treatment of data-storage electrodes comprising charge-trapping insulators

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
TW091117013A 2001-08-28 2002-07-30 Nonvolatile storage device and semiconductor integrated circuit TW584943B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001257698A JP2003068893A (ja) 2001-08-28 2001-08-28 不揮発性記憶素子及び半導体集積回路

Publications (1)

Publication Number Publication Date
TW584943B true TW584943B (en) 2004-04-21

Family

ID=19085320

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091117013A TW584943B (en) 2001-08-28 2002-07-30 Nonvolatile storage device and semiconductor integrated circuit

Country Status (3)

Country Link
JP (1) JP2003068893A (enExample)
TW (1) TW584943B (enExample)
WO (1) WO2003021666A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8198671B2 (en) 2009-04-22 2012-06-12 Applied Materials, Inc. Modification of charge trap silicon nitride with oxygen plasma
US9190158B2 (en) 2012-08-01 2015-11-17 Powerchip Technology Corp. Non-volatile semiconductor memory device and reading-out method therefore

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4647175B2 (ja) 2002-04-18 2011-03-09 ルネサスエレクトロニクス株式会社 半導体集積回路装置
KR100446632B1 (ko) * 2002-10-14 2004-09-04 삼성전자주식회사 비휘발성 ｓｏｎｓｎｏｓ 메모리
KR100474850B1 (ko) * 2002-11-15 2005-03-11 삼성전자주식회사 수직 채널을 가지는 비휘발성 ｓｏｎｏｓ 메모리 및 그 제조방법
US7133313B2 (en) * 2004-04-26 2006-11-07 Macronix International Co., Ltd. Operation scheme with charge balancing for charge trapping non-volatile memory
US7075828B2 (en) * 2004-04-26 2006-07-11 Macronix International Co., Intl. Operation scheme with charge balancing erase for charge trapping non-volatile memory
JP2006196643A (ja) * 2005-01-13 2006-07-27 Renesas Technology Corp 不揮発性半導体記憶装置
JP2006245415A (ja) 2005-03-04 2006-09-14 Sharp Corp 半導体記憶装置及びその製造方法、並びに携帯電子機器
US7612403B2 (en) * 2005-05-17 2009-11-03 Micron Technology, Inc. Low power non-volatile memory and gate stack
US8101989B2 (en) * 2006-11-20 2012-01-24 Macronix International Co., Ltd. Charge trapping devices with field distribution layer over tunneling barrier
KR100815968B1 (ko) * 2007-05-17 2008-03-24 주식회사 동부하이텍 반도체 소자 제조 방법
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
US8252653B2 (en) 2008-10-21 2012-08-28 Applied Materials, Inc. Method of forming a non-volatile memory having a silicon nitride charge trap layer
US8987098B2 (en) 2012-06-19 2015-03-24 Macronix International Co., Ltd. Damascene word line
US9379126B2 (en) 2013-03-14 2016-06-28 Macronix International Co., Ltd. Damascene conductor for a 3D device
US9099538B2 (en) 2013-09-17 2015-08-04 Macronix International Co., Ltd. Conductor with a plurality of vertical extensions for a 3D device
US9559113B2 (en) 2014-05-01 2017-01-31 Macronix International Co., Ltd. SSL/GSL gate oxide in 3D vertical channel NAND

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4913118B1 (enExample) * 1970-02-05 1974-03-29
JPS4886485A (enExample) * 1972-02-17 1973-11-15
JPS5924547B2 (ja) * 1976-11-04 1984-06-09 ソニー株式会社 不揮発性メモリトランジスタ
JP2901493B2 (ja) * 1994-06-27 1999-06-07 日本電気株式会社 半導体記憶装置及びその製造方法
JPH09205155A (ja) * 1996-01-25 1997-08-05 Sony Corp 半導体記憶装置の製造方法
JP2000030471A (ja) * 1998-07-14 2000-01-28 Toshiba Microelectronics Corp 不揮発性半導体メモリ
JP2000049241A (ja) * 1998-07-28 2000-02-18 Matsushita Electron Corp 半導体メモリ装置およびその製造方法
JP2000349175A (ja) * 1999-06-03 2000-12-15 Mitsubishi Electric Corp 半導体装置の製造方法
JP3464955B2 (ja) * 1999-12-03 2003-11-10 Ｎｅｃエレクトロニクス株式会社 半導体記憶装置及び記憶方法
JP2002184873A (ja) * 2000-10-03 2002-06-28 Sony Corp 不揮発性半導体記憶装置及びその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8198671B2 (en) 2009-04-22 2012-06-12 Applied Materials, Inc. Modification of charge trap silicon nitride with oxygen plasma
US9190158B2 (en) 2012-08-01 2015-11-17 Powerchip Technology Corp. Non-volatile semiconductor memory device and reading-out method therefore

Also Published As

Publication number Publication date
JP2003068893A (ja) 2003-03-07
WO2003021666A1 (en) 2003-03-13

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