WO2003012872A1 - Dispositif a circuit integre a semi-conducteur - Google Patents

Dispositif a circuit integre a semi-conducteur Download PDF

Info

Publication number
WO2003012872A1
WO2003012872A1 PCT/JP2002/002065 JP0202065W WO03012872A1 WO 2003012872 A1 WO2003012872 A1 WO 2003012872A1 JP 0202065 W JP0202065 W JP 0202065W WO 03012872 A1 WO03012872 A1 WO 03012872A1
Authority
WO
WIPO (PCT)
Prior art keywords
flip
mos transistor
flop circuits
insulating film
logic
Prior art date
Application number
PCT/JP2002/002065
Other languages
English (en)
French (fr)
Inventor
Takeo Yamashita
Original Assignee
Hitachi, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi, Ltd. filed Critical Hitachi, Ltd.
Publication of WO2003012872A1 publication Critical patent/WO2003012872A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823857—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0922—Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
PCT/JP2002/002065 2001-07-31 2002-03-06 Dispositif a circuit integre a semi-conducteur WO2003012872A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001230745A JP4492837B2 (ja) 2001-07-31 2001-07-31 半導体集積回路装置
JP2001-230745 2001-07-31

Publications (1)

Publication Number Publication Date
WO2003012872A1 true WO2003012872A1 (fr) 2003-02-13

Family

ID=19062902

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/002065 WO2003012872A1 (fr) 2001-07-31 2002-03-06 Dispositif a circuit integre a semi-conducteur

Country Status (2)

Country Link
JP (1) JP4492837B2 (ja)
WO (1) WO2003012872A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010098325A (ja) * 2003-03-28 2010-04-30 Hitachi Ltd 半導体集積回路装置とｃｍｏｓ回路の高速化方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4979186A (ja) * 1972-12-04 1974-07-31
JPH07240471A (ja) * 1994-02-28 1995-09-12 Sanyo Electric Co Ltd 半導体集積回路装置
JPH08139589A (ja) * 1994-11-15 1996-05-31 Toshiba Corp Ｃ−ｍｏｓ論理回路及びその設計方法
JPH09285109A (ja) * 1996-04-09 1997-10-31 Toshiba Corp 半導体装置
JPH11195976A (ja) * 1997-12-26 1999-07-21 Hitachi Ltd 半導体集積回路装置およびセルライブラリを記憶した記憶媒体および半導体集積回路の設計方法
EP0951072A1 (en) * 1996-04-08 1999-10-20 Hitachi, Ltd. Semiconductor integrated circuit device
JP2001085625A (ja) * 1999-09-13 2001-03-30 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP2001203325A (ja) * 2000-01-19 2001-07-27 Hitachi Ltd 半導体集積回路装置とデジタル集積回路の設計方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4979186A (ja) * 1972-12-04 1974-07-31
JPH07240471A (ja) * 1994-02-28 1995-09-12 Sanyo Electric Co Ltd 半導体集積回路装置
JPH08139589A (ja) * 1994-11-15 1996-05-31 Toshiba Corp Ｃ−ｍｏｓ論理回路及びその設計方法
EP0951072A1 (en) * 1996-04-08 1999-10-20 Hitachi, Ltd. Semiconductor integrated circuit device
JPH09285109A (ja) * 1996-04-09 1997-10-31 Toshiba Corp 半導体装置
JPH11195976A (ja) * 1997-12-26 1999-07-21 Hitachi Ltd 半導体集積回路装置およびセルライブラリを記憶した記憶媒体および半導体集積回路の設計方法
JP2001085625A (ja) * 1999-09-13 2001-03-30 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP2001203325A (ja) * 2000-01-19 2001-07-27 Hitachi Ltd 半導体集積回路装置とデジタル集積回路の設計方法

Also Published As

Publication number Publication date
JP4492837B2 (ja) 2010-06-30
JP2003045997A (ja) 2003-02-14

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