WO2002084717A1 - Dispositif ceramique chauffant pour installation de fabrication/inspection de semi-conducteurs - Google Patents

Dispositif ceramique chauffant pour installation de fabrication/inspection de semi-conducteurs Download PDF

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Publication number
WO2002084717A1
WO2002084717A1 PCT/JP2002/003608 JP0203608W WO02084717A1 WO 2002084717 A1 WO2002084717 A1 WO 2002084717A1 JP 0203608 W JP0203608 W JP 0203608W WO 02084717 A1 WO02084717 A1 WO 02084717A1
Authority
WO
WIPO (PCT)
Prior art keywords
ceramic heater
semiconductor
inspecting apparatus
manufactring
semiconductor manufacturing
Prior art date
Application number
PCT/JP2002/003608
Other languages
English (en)
French (fr)
Inventor
Yasutaka Ito
Original Assignee
Ibiden Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibiden Co., Ltd. filed Critical Ibiden Co., Ltd.
Priority to US10/473,585 priority Critical patent/US20040206747A1/en
Priority to JP2002581569A priority patent/JPWO2002084717A1/ja
Priority to EP02718530A priority patent/EP1391919A1/en
Publication of WO2002084717A1 publication Critical patent/WO2002084717A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
    • H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
    • H05B3/141—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
    • H05B3/143—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds applied to semiconductors, e.g. wafers heating

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Resistance Heating (AREA)
  • Surface Heating Bodies (AREA)
PCT/JP2002/003608 2001-04-11 2002-04-11 Dispositif ceramique chauffant pour installation de fabrication/inspection de semi-conducteurs WO2002084717A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US10/473,585 US20040206747A1 (en) 2001-04-11 2002-04-11 Ceramic heater for semiconductor manufacturing/inspecting apparatus
JP2002581569A JPWO2002084717A1 (ja) 2001-04-11 2002-04-11 半導体製造・検査装置用セラミックヒータ
EP02718530A EP1391919A1 (en) 2001-04-11 2002-04-11 Ceramic heater for semiconductor manufactring/inspecting apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001-113247 2001-04-11
JP2001113247 2001-04-11

Publications (1)

Publication Number Publication Date
WO2002084717A1 true WO2002084717A1 (fr) 2002-10-24

Family

ID=18964497

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/003608 WO2002084717A1 (fr) 2001-04-11 2002-04-11 Dispositif ceramique chauffant pour installation de fabrication/inspection de semi-conducteurs

Country Status (4)

Country Link
US (1) US20040206747A1 (ja)
EP (1) EP1391919A1 (ja)
JP (1) JPWO2002084717A1 (ja)
WO (1) WO2002084717A1 (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007515778A (ja) * 2003-05-08 2007-06-14 ワットロー・エレクトリック・マニュファクチャリング・カンパニー 多数領域セラミック加熱システム及びその製造方法
WO2017029876A1 (ja) * 2015-08-20 2017-02-23 日本碍子株式会社 静電チャックヒータ
JP2018032571A (ja) * 2016-08-26 2018-03-01 京セラ株式会社 ヒータ
KR20190045688A (ko) * 2017-10-24 2019-05-03 (주)티티에스 세라믹 플레이트 제조 방법
KR20190045669A (ko) * 2017-10-24 2019-05-03 (주)티티에스 열전대 삽입 홈을 구비한 히터
CN115172231A (zh) * 2022-09-08 2022-10-11 西北电子装备技术研究所(中国电子科技集团公司第二研究所) 一种带有气氛保护的快速升降温共晶加热台

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1193961C (zh) * 1999-09-06 2005-03-23 Ibiden股份有限公司 含碳的氮化铝烧结体,用于半导体制造/检测设备的基材
US6888106B2 (en) * 2000-04-07 2005-05-03 Ibiden Co., Ltd. Ceramic heater
US7071551B2 (en) * 2000-05-26 2006-07-04 Ibiden Co., Ltd. Device used to produce or examine semiconductors
WO2002003435A1 (fr) * 2000-07-04 2002-01-10 Ibiden Co., Ltd. Plaque chaude destinee a la fabrication et aux essais de semiconducteurs
WO2002047129A1 (fr) 2000-12-05 2002-06-13 Ibiden Co., Ltd. Substrat ceramique pour dispositifs de production et de controle de semi-conducteurs et procede de production dudit substrat ceramique
US20060088692A1 (en) * 2004-10-22 2006-04-27 Ibiden Co., Ltd. Ceramic plate for a semiconductor producing/examining device
US7645342B2 (en) 2004-11-15 2010-01-12 Cree, Inc. Restricted radiated heating assembly for high temperature processing
US7730737B2 (en) * 2004-12-21 2010-06-08 Taiwan Semiconductor Manufacturing Co., Ltd. Cooling station lifter pins
US8709162B2 (en) * 2005-08-16 2014-04-29 Applied Materials, Inc. Active cooling substrate support
US9100992B2 (en) 2012-10-08 2015-08-04 Minco Products, Inc. Heater assembly
US10543549B2 (en) 2013-07-16 2020-01-28 Illinois Tool Works Inc. Additive manufacturing system for joining and surface overlay
DE102013113052A1 (de) * 2013-11-26 2015-05-28 Aixtron Se Heizeinrichtung für einen CVD-Reaktor
JP6219227B2 (ja) * 2014-05-12 2017-10-25 東京エレクトロン株式会社 ヒータ給電機構及びステージの温度制御方法
JP6219229B2 (ja) * 2014-05-19 2017-10-25 東京エレクトロン株式会社 ヒータ給電機構
JP6378942B2 (ja) * 2014-06-12 2018-08-22 東京エレクトロン株式会社 載置台及びプラズマ処理装置
US20170145586A1 (en) * 2015-11-23 2017-05-25 Hobart Brothers Company System and method for single crystal growth with additive manufacturing
US10852261B2 (en) * 2016-10-29 2020-12-01 Sendsor Gmbh Sensor and method for measuring respiratory gas properties
DE102017124256A1 (de) 2016-10-29 2018-05-03 Sendsor Gmbh Sensor und Verfahren zum Messen der Eigenschaften des Atemgas
JP6866255B2 (ja) * 2017-08-09 2021-04-28 東京エレクトロン株式会社 プラズマ処理装置
US11371748B2 (en) 2019-08-05 2022-06-28 The Merchant Of Tennis, Inc. Portable heater with ceramic substrate
JP2022042379A (ja) * 2020-09-02 2022-03-14 東京エレクトロン株式会社 載置台及びプラズマ処理装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0669137A (ja) * 1992-08-14 1994-03-11 Ngk Insulators Ltd セラミックスヒーター

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW444922U (en) * 1994-09-29 2001-07-01 Tokyo Electron Ltd Heating device and the processing device using the same
US6222161B1 (en) * 1998-01-12 2001-04-24 Tokyo Electron Limited Heat treatment apparatus
JP3434721B2 (ja) * 1998-11-30 2003-08-11 東芝セラミックス株式会社 封止端子
JP2001118664A (ja) * 1999-08-09 2001-04-27 Ibiden Co Ltd セラミックヒータ
US6835916B2 (en) * 1999-08-09 2004-12-28 Ibiden, Co., Ltd Ceramic heater
EP1120829A4 (en) * 1999-08-10 2009-05-27 Ibiden Co Ltd CERAMIC PLATE FOR DEVICE FOR PRODUCING SEMICONDUCTORS
EP1199908A4 (en) * 1999-10-22 2003-01-22 Ibiden Co Ltd CERAMIC HEATING PLATE
US6632512B1 (en) * 1999-11-10 2003-10-14 Ibiden Co., Ltd. Ceramic substrate
DE60021848T2 (de) * 1999-11-19 2006-06-08 Ibiden Co., Ltd. Keramisches heizgerät
JP2001297857A (ja) * 1999-11-24 2001-10-26 Ibiden Co Ltd 半導体製造・検査装置用セラミックヒータ
EP1137321A1 (en) * 1999-11-30 2001-09-26 Ibiden Co., Ltd. Ceramic heater
JP2001237053A (ja) * 1999-12-14 2001-08-31 Ibiden Co Ltd 半導体製造・検査装置用セラミックヒータおよび支持ピン
US20040222211A1 (en) * 1999-12-28 2004-11-11 Ibiden Co., Ltd. Carbon-containing aluminum nitride sintered body, and ceramic substrate for a semiconductor producing/examining device
US20040011781A1 (en) * 1999-12-29 2004-01-22 Ibiden Co., Ltd. Ceramic heater
JP3228923B2 (ja) * 2000-01-18 2001-11-12 イビデン株式会社 半導体製造・検査装置用セラミックヒータ
JP3228924B2 (ja) * 2000-01-21 2001-11-12 イビデン株式会社 半導体製造・検査装置用セラミックヒータ
EP1191002A4 (en) * 2000-02-24 2005-01-26 Ibiden Co Ltd SINTERED ALUMINUM NITRIDE PIECE, CERAMIC SUBSTRATE, CERAMIC HEATING BODY, AND ELECTROSTATIC CHUCK
JP2001244320A (ja) * 2000-02-25 2001-09-07 Ibiden Co Ltd セラミック基板およびその製造方法
US20030098299A1 (en) * 2000-03-06 2003-05-29 Ibiden Co., Ltd. Ceramic heater
JP2001253777A (ja) * 2000-03-13 2001-09-18 Ibiden Co Ltd セラミック基板
JP2001302330A (ja) * 2000-04-24 2001-10-31 Ibiden Co Ltd セラミック基板
EP1204299A1 (en) * 2000-04-29 2002-05-08 Ibiden Co., Ltd. Ceramic heater and method of controlling temperature of the ceramic heater
WO2001084886A1 (fr) * 2000-05-02 2001-11-08 Ibiden Co., Ltd. Dispositif de chauffage en ceramique
EP1211725A4 (en) * 2000-05-10 2003-02-26 Ibiden Co Ltd ELECTROSTATIC CHUCK
US7071551B2 (en) * 2000-05-26 2006-07-04 Ibiden Co., Ltd. Device used to produce or examine semiconductors
US20040035846A1 (en) * 2000-09-13 2004-02-26 Yasuji Hiramatsu Ceramic heater for semiconductor manufacturing and inspecting equipment

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0669137A (ja) * 1992-08-14 1994-03-11 Ngk Insulators Ltd セラミックスヒーター

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007515778A (ja) * 2003-05-08 2007-06-14 ワットロー・エレクトリック・マニュファクチャリング・カンパニー 多数領域セラミック加熱システム及びその製造方法
JP4908217B2 (ja) * 2003-05-08 2012-04-04 ワットロー・エレクトリック・マニュファクチャリング・カンパニー 多数領域セラミック加熱システム及びその製造方法
WO2017029876A1 (ja) * 2015-08-20 2017-02-23 日本碍子株式会社 静電チャックヒータ
JP6129451B1 (ja) * 2015-08-20 2017-05-17 日本碍子株式会社 静電チャックヒータ
US10292209B2 (en) 2015-08-20 2019-05-14 Ngk Insulators, Ltd. Electrostatic chuck heater
JP2018032571A (ja) * 2016-08-26 2018-03-01 京セラ株式会社 ヒータ
KR20190045688A (ko) * 2017-10-24 2019-05-03 (주)티티에스 세라믹 플레이트 제조 방법
KR20190045669A (ko) * 2017-10-24 2019-05-03 (주)티티에스 열전대 삽입 홈을 구비한 히터
KR102015643B1 (ko) * 2017-10-24 2019-08-28 (주)티티에스 열전대 삽입 홈을 구비한 히터
KR101994178B1 (ko) * 2017-10-24 2019-09-30 (주)티티에스 세라믹 플레이트 제조 방법
CN115172231A (zh) * 2022-09-08 2022-10-11 西北电子装备技术研究所(中国电子科技集团公司第二研究所) 一种带有气氛保护的快速升降温共晶加热台

Also Published As

Publication number Publication date
JPWO2002084717A1 (ja) 2004-08-05
EP1391919A1 (en) 2004-02-25
US20040206747A1 (en) 2004-10-21

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