KR20050074930A - 가열 장치 - Google Patents
가열 장치 Download PDFInfo
- Publication number
- KR20050074930A KR20050074930A KR1020050003836A KR20050003836A KR20050074930A KR 20050074930 A KR20050074930 A KR 20050074930A KR 1020050003836 A KR1020050003836 A KR 1020050003836A KR 20050003836 A KR20050003836 A KR 20050003836A KR 20050074930 A KR20050074930 A KR 20050074930A
- Authority
- KR
- South Korea
- Prior art keywords
- wafer
- side wall
- heating
- heating apparatus
- wall portion
- Prior art date
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 68
- 235000012431 wafers Nutrition 0.000 title description 56
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 230000020169 heat generation Effects 0.000 claims 2
- 239000000919 ceramic Substances 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 238000009826 distribution Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910000856 hastalloy Inorganic materials 0.000 description 1
- 229910001293 incoloy Inorganic materials 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F27/00—Mixers with rotary stirring devices in fixed receptacles; Kneaders
- B01F27/80—Mixers with rotary stirring devices in fixed receptacles; Kneaders with stirrers rotating about a substantially vertical axis
- B01F27/90—Mixers with rotary stirring devices in fixed receptacles; Kneaders with stirrers rotating about a substantially vertical axis with paddles or arms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F27/00—Mixers with rotary stirring devices in fixed receptacles; Kneaders
- B01F27/80—Mixers with rotary stirring devices in fixed receptacles; Kneaders with stirrers rotating about a substantially vertical axis
- B01F27/808—Mixers with rotary stirring devices in fixed receptacles; Kneaders with stirrers rotating about a substantially vertical axis with stirrers driven from the bottom of the receptacle
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F35/00—Accessories for mixers; Auxiliary operations or auxiliary devices; Parts or details of general application
- B01F35/75—Discharge mechanisms
- B01F35/754—Discharge mechanisms characterised by the means for discharging the components from the mixer
- B01F35/7544—Discharge mechanisms characterised by the means for discharging the components from the mixer using pumps
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
- H05B3/141—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
- H05B3/143—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds applied to semiconductors, e.g. wafers heating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F2101/00—Mixing characterised by the nature of the mixed materials or by the application field
- B01F2101/36—Mixing of ingredients for adhesives or glues; Mixing adhesives and gas
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Resistance Heating (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
설정 온도 | D = 8 mm | D = 0.5 mm |
200℃ | 4.4℃ | 5.2℃ |
300℃ | 3.6℃ | 4.1℃ |
400℃ | 2.6℃ | 2.6℃ |
500℃ | 3.8℃ | 4.6℃ |
600℃ | 5.2℃ | 7.4℃ |
범위 | 2.6℃~5.2℃ | 2.6℃~7.4℃ |
Claims (9)
- 웨이퍼를 지지 및 가열하기 위한 지지면을 구비하고 있는 기판부와, 상기 웨이퍼의 측둘레면을 포위하도록 설치되는 측벽부를 구비하고 있고, 상기 기판부와 측벽부는 상기 기판부 또는 측벽부에 설치된 발열체에 의해 가열되며, 상기 측벽부의 상기 지지면으로부터의 높이(D)가 상기 웨이퍼의 두께(C) 이상인 것을 특징으로 하는 웨이퍼 가열 장치.
- 제1항에 있어서, 상기 측벽부에 상기 발열체가 설치되어 있는 것을 특징으로 하는 웨이퍼 가열 장치.
- 제2항에 있어서, 상기 측벽부 내에 상기 발열체가 매설되어 있는 것을 특징으로 하는 웨이퍼 가열 장치.
- 제2항에 있어서, 상기 측벽부에 설치된 발열체의 발열 밀도가 기판부에 설치된 발열체의 발열 밀도보다 큰 것을 특징으로 하는 웨이퍼 가열 장치.
- 제1항 내지 제4항 중 어느 한 항에 있어서, 상기 웨이퍼의 상면을 피복하고, 관통 구멍을 갖는 덮개를 구비하고 있는 것을 특징으로 하는 웨이퍼 가열 장치.
- 제1항 내지 제4항 중 어느 한 항에 있어서, 상기 기판부와 측벽부가 각각 다른 기체(基體)로 이루어지는 것을 특징으로 하는 웨이퍼 가열 장치.
- 제1항 내지 제4항 중 어느 한 항에 있어서, 상기 기판부와 측벽부가 일체로 되어 있는 것을 특징으로 하는 웨이퍼 가열 장치.
- 제1항 내지 제4항 중 어느 한 항에 있어서, 상기 기판부 또는 측벽부가 고주파 전극이나 정전 척 전극을 갖는 것을 특징으로 하는 웨이퍼 가열 장치.
- 제1항 내지 제4항 중 어느 한 항에 있어서, 상기 기판부 또는 측벽부에 2개 이상의 발열체가 설치되어 있어, 멀티 존 제어가 가능한 것을 특징으로 하는 웨이퍼 가열 장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004006247A JP4376070B2 (ja) | 2004-01-14 | 2004-01-14 | 加熱装置 |
JPJP-P-2004-00006247 | 2004-01-14 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20050074930A true KR20050074930A (ko) | 2005-07-19 |
KR100709536B1 KR100709536B1 (ko) | 2007-04-20 |
Family
ID=34820270
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020050003836A KR100709536B1 (ko) | 2004-01-14 | 2005-01-14 | 가열 장치 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20050173412A1 (ko) |
JP (1) | JP4376070B2 (ko) |
KR (1) | KR100709536B1 (ko) |
TW (1) | TWI251895B (ko) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006210467A (ja) * | 2005-01-26 | 2006-08-10 | Sumitomo Electric Ind Ltd | 半導体製造装置用加熱体 |
US20090277472A1 (en) * | 2008-05-06 | 2009-11-12 | Novellus Systems, Inc. | Photoresist Stripping Method and Apparatus |
US8033771B1 (en) | 2008-12-11 | 2011-10-11 | Novellus Systems, Inc. | Minimum contact area wafer clamping with gas flow for rapid wafer cooling |
JP5577652B2 (ja) * | 2009-09-01 | 2014-08-27 | 株式会社ニコン | 接合装置、接合方法および半導体装置の製造方法 |
JP5603055B2 (ja) * | 2009-12-01 | 2014-10-08 | 株式会社幸和電熱計器 | ホットプレートおよびそれを用いたホットプレートユニット |
WO2012056808A1 (ja) | 2010-10-25 | 2012-05-03 | 日本碍子株式会社 | セラミックス材料、半導体製造装置用部材、スパッタリングターゲット部材及びセラミックス材料の製造方法 |
WO2012056807A1 (ja) * | 2010-10-25 | 2012-05-03 | 日本碍子株式会社 | セラミックス材料、積層体、半導体製造装置用部材及びスパッタリングターゲット部材 |
US8371567B2 (en) | 2011-04-13 | 2013-02-12 | Novellus Systems, Inc. | Pedestal covers |
KR20190132561A (ko) | 2012-01-06 | 2019-11-27 | 노벨러스 시스템즈, 인코포레이티드 | 적응형 열 교환 방법 및 균일한 열 교환을 위한 시스템 |
CN104681462B (zh) * | 2013-11-29 | 2018-01-26 | 中微半导体设备(上海)有限公司 | 静电卡盘加热测温电路及等离子体反应装置 |
JP6378942B2 (ja) * | 2014-06-12 | 2018-08-22 | 東京エレクトロン株式会社 | 載置台及びプラズマ処理装置 |
JP2014197709A (ja) * | 2014-07-10 | 2014-10-16 | 株式会社ニコン | 接合装置、接合方法および半導体装置の製造方法 |
US10347547B2 (en) | 2016-08-09 | 2019-07-09 | Lam Research Corporation | Suppressing interfacial reactions by varying the wafer temperature throughout deposition |
JP2021125517A (ja) * | 2020-02-04 | 2021-08-30 | 日本碍子株式会社 | セラミックヒータ |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1120817B8 (en) * | 1991-03-26 | 2007-10-10 | Ngk Insulators, Ltd. | Use of a corrosion-resistant member |
US5616208A (en) * | 1993-09-17 | 1997-04-01 | Tokyo Electron Limited | Vacuum processing apparatus, vacuum processing method, and method for cleaning the vacuum processing apparatus |
US5471033A (en) * | 1994-04-15 | 1995-11-28 | International Business Machines Corporation | Process and apparatus for contamination-free processing of semiconductor parts |
US6133557A (en) * | 1995-01-31 | 2000-10-17 | Kyocera Corporation | Wafer holding member |
JP3901252B2 (ja) * | 1996-08-13 | 2007-04-04 | キヤノンアネルバ株式会社 | 化学蒸着装置 |
JP3559133B2 (ja) * | 1997-01-31 | 2004-08-25 | 大日本スクリーン製造株式会社 | 熱処理装置および基板処理装置 |
KR19990074937A (ko) * | 1998-03-16 | 1999-10-05 | 윤종용 | 웨이퍼의 균일한 온도 제어를 위하여 분할된 메인 히터를 가지는 증착 장치 |
JP2000114354A (ja) * | 1998-09-30 | 2000-04-21 | Kyocera Corp | ウエハ支持加熱用ヒータ |
JP2001118662A (ja) * | 1999-08-09 | 2001-04-27 | Ibiden Co Ltd | セラミックヒータ |
JP4209057B2 (ja) * | 1999-12-01 | 2009-01-14 | 東京エレクトロン株式会社 | セラミックスヒーターならびにそれを用いた基板処理装置および基板処理方法 |
JP2001298020A (ja) * | 2000-04-18 | 2001-10-26 | Nhk Spring Co Ltd | セラミックヒータ及びそれを用いた成膜処理装置 |
JP2002057079A (ja) * | 2000-06-26 | 2002-02-22 | Unisem Co Ltd | 半導体ウェーハベーク装置 |
JP4156788B2 (ja) * | 2000-10-23 | 2008-09-24 | 日本碍子株式会社 | 半導体製造装置用サセプター |
US6841342B2 (en) * | 2001-08-08 | 2005-01-11 | Tokyo Electron Limited | Substrate processing apparatus and substrate processing method |
US6808566B2 (en) * | 2001-09-19 | 2004-10-26 | Tokyo Electron Limited | Reduced-pressure drying unit and coating film forming method |
US6796054B2 (en) * | 2002-03-12 | 2004-09-28 | Tokyo Electron Limited | Low-pressure dryer and low-pressure drying method |
-
2004
- 2004-01-14 JP JP2004006247A patent/JP4376070B2/ja not_active Expired - Fee Related
- 2004-12-20 US US11/016,979 patent/US20050173412A1/en not_active Abandoned
-
2005
- 2005-01-10 TW TW094100602A patent/TWI251895B/zh active
- 2005-01-14 KR KR1020050003836A patent/KR100709536B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
JP2005203456A (ja) | 2005-07-28 |
JP4376070B2 (ja) | 2009-12-02 |
US20050173412A1 (en) | 2005-08-11 |
TW200527580A (en) | 2005-08-16 |
KR100709536B1 (ko) | 2007-04-20 |
TWI251895B (en) | 2006-03-21 |
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