JP2007515778A - 多数領域セラミック加熱システム及びその製造方法 - Google Patents
多数領域セラミック加熱システム及びその製造方法 Download PDFInfo
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- 239000000919 ceramic Substances 0.000 title claims abstract description 188
- 238000010438 heat treatment Methods 0.000 title claims abstract description 152
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 62
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 45
- 239000002131 composite material Substances 0.000 claims abstract description 45
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 45
- 239000011733 molybdenum Substances 0.000 claims abstract description 45
- 239000004065 semiconductor Substances 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 238000009826 distribution Methods 0.000 claims abstract description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 15
- 239000004020 conductor Substances 0.000 claims description 11
- 238000003486 chemical etching Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- 230000001747 exhibiting effect Effects 0.000 claims description 4
- 238000001514 detection method Methods 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 33
- 239000000976 ink Substances 0.000 description 10
- 239000007789 gas Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- 239000000112 cooling gas Substances 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000003870 refractory metal Substances 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 238000011088 calibration curve Methods 0.000 description 2
- 230000001627 detrimental effect Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000001513 hot isostatic pressing Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002893 slag Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H01L21/67248—Temperature monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
- H05B3/141—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
- H05B3/283—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
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Abstract
【選択図】 図1
Description
Claims (33)
- セラミックヒータ(12)であって、
(a)セラミック基板(16)と、
(b)前記セラミックヒータ(12)内部に直接埋め込まれた加熱素子配置(44)と、
(c)前記加熱素子配置(44)と作動的に関連付けられた温度センサ配置(38)であって、前記セラミック基板(16)内に直接埋め込まれている前記温度センサ配置(38)と、
を備えたセラミックヒータ(12)。 - 前記セラミック基板(16)に取り付けられた中空軸(18)をさらに備えた請求項1記載のセラミックヒータ(12)。
- 前記セラミック基板(16)が多数の材料の層(26,28,30,32,34,36)を備えている請求項1記載のセラミックヒータ(12)。
- 前記多数の材料の層(26,28,30,32,34,36)が、窒化アルミニウムのセラミック複合体から成る請求項3記載のセラミックヒータ(12)。
- 前記加熱素子配置(44)が、モリブデンと窒化アルミニウムの複合体から成る請求項1記載のセラミックヒータ(12)。
- 前記温度センサ配置(38)が、モリブデンと窒化アルミニウムの複合体から成る請求項1記載のセラミックヒータ(12)。
- 前記加熱素子配置(44)と前記温度センサ配置(38)に結合された伝導路(40,41)をさらに備えた請求項1記載のセラミックヒータ(12)。
- 前記伝導路(40,41)は、モリブデンと窒化アルミニウムの複合体を含んでいる請求項7記載のセラミックヒータ(12)。
- 前記伝導路(40,41)に接続された導線(42)をさらに備えた請求項7記載のセラミックヒータ(12)。
- 前記温度センサ配置(38)は前記加熱素子配置(44)とマイクロプロセッサー(14)によって作動的に関連付けられている請求項1記載のセラミックヒータ(12)。
- 前記導線(42)はニッケルから構成されている請求項9記載のセラミックヒータ(12)。
- セラミックヒータ(12)であって、
(a)多数のセラミック層(26,28,30,32,34,36)と、
(b)前記多数のセラミック層(26,28,30,32,34,36)内部に直接埋め込まれ、少なくとも2つの個別で別個の加熱領域(28A、28B)を形成する加熱素子配置(44)と、
(c)前記多数のセラミック層(26,28,30,32,34,36)間に直接埋め込まれ、前記加熱素子配置(44)と作動的に関連付けられている温度センサ配置(38)と、
を備えたセラミックヒータ(12)。 - 前記加熱素子配置(44)は、低い温度抵抗係数を示す材料から製造されている請求項12記載のセラミックヒータ(12)。
- 前記加熱素子配置(44)は、モリブデンと窒化アルミニウムの複合体から製造されている請求項12記載のセラミックヒータ(12)。
- 前記温度センサ配置(38)は、モリブデンと窒化アルミニウムの複合体を含んでいる請求項12記載のセラミックヒータ(12)。
- 前記多数のセラミック層(26,28,30,32,34,36)を貫通して横切る伝導路(40,41)をさらに備えた請求項12記載のセラミックヒータ(12)。
- 前記伝導路(40,41)は、モリブデンと窒化アルミニウムの複合体を含んでいる請求項16記載のセラミックヒータ(12)。
- 前記伝導路(40,41)に結合された導線(42)をさらに備えた請求項16記載のセラミックヒータ(12)。
- 半導体ウェハーに渡って一様な温度を維持するための加熱システム(10)であって、
(a)(i)セラミック基板を形成する多数のセラミック層(26,28,30,32,34,36)と、
(ii)前記多数のセラミック層(26,28,30,32,34,36)の内部に直接埋め込まれた加熱素子配置(44)と、
(iii)前記多数のセラミック層(26,28,30,32,34,36)の内部に直接埋め込まれた温度検出配置(38)であって、前記加熱素子配置(44)と作動的に関連付けられた温度検出配置(38)と、
を備えたセラミックヒータ(12)と、
(b)前記半導体ウェハーの表面に渡って一様な温度分布を維持するために、前記加熱素子配置(44)と前記温度検出配置(38)とに作動的に関連付けられているマイクロプロセッサー(14)と、
を備えた加熱システム(10)。 - 前記加熱素子配置(44)が、モリブデンと窒化アルミニウムの複合体から製造されている請求項19記載の加熱システム(10)。
- 前記温度検出配置(38)が前記多数のセラミック層(26,28,30,32,34,36)の2つの間に適用されている請求項19記載の加熱システム(10)。
- 前記加熱素子配置(44)は、前記多数のセラミック層(26,28,30,32,34,36)の1つの内部に相互に重ね継がれている請求項19記載の加熱システム(10)。
- 低い温度抵抗係数を示すモリブデンと窒化アルミニウムの複合体を備えたセラミック基板(16)に用いられる加熱素子(10)。
- 前記加熱素子配置(44)は、0.0015/℃よりも低い温度抵抗係数を経験する請求項23記載の加熱素子(10)。
- 窒化アルミニウムの割合に関してモリブデンの割合は20%〜50%である請求項23記載の加熱素子(10)。
- モリブデンの割合に関して窒化アルミニウムの割合は80%〜45%である請求項23記載の加熱素子(10)。
- 半導体ウェハーを化学蒸着法及びエッチング環境で加熱するためのセラミックヒータ(12)を製造する方法であって、
(a)多数の窒化アルミニウムの複合体を含んだテープの層(26,28,30,32,34,36)を準備する工程と、
(b)前記多数のテープの層の1つ(28)内部に加熱素子(44)を配置する工程と、
(c)前記多数のテープの層の1つ(32)に温度検出配置(38)を適用する工程と、
(d)前記多数のテープの層を共に配置する工程と、
(e)前記多数のテープの層(26,28,30,32,34,36)からセラミック複合体(16)を形成する工程と、
を備えたセラミックヒータ(12)を製造する方法。 - 前記加熱素子配置(44)と前記温度検出配置(38)への伝導路(40,41)を前記セラミック複合体(16)の内部に提供する工程をさらに備えた請求項27記載のセラミックヒータ(12)を製造する方法。
- 前記伝導路(40,41)に導線(42)を取り付ける工程をさらに備えた請求項28記載のセラミックヒータ(12)を製造する方法。
- 物体に一定で一様な熱源を付与する方法であって、
(a)(i)多数のセラミック層(26,28,30,32,34,36)と、
(ii)少なくとも2つの個別で別個の加熱領域(28A、28B)を形成している前記多数のセラミック層(26,28,30,32,34,36)の内部に直接埋め込まれた加熱素子配置(44)と、
(iii)前記多数のセラミック層(26,28,30,32,34,36)の内部に直接埋め込まれ、前記加熱素子配置(44)と作動的に関連付けられている温度検出配置(38)と、
を備えたセラミックヒータ(12)準備する工程と、
(b)前記物体を前記セラミックヒータ(12)と伝達するように配置する工程と、
(c)前記物体の表面に渡って異なっている温度を検出する前記温度検出配置(38)を可能ならしめる工程と、
(d)前記物体に渡っての前記異なっている温度を除去するために前記加熱素子配置(44)を調整する工程と、
を備えた物体に一定で一様な熱源を付与する方法。 - 前記物体が半導体ウェハーである請求項31記載の方法。
- 前記加熱素子配置(44)を調整する工程は前記加熱素子配置(44)の作動的制御を管理するマイクロプロセッサー(14)によって達成される請求項31記載の方法。
- 前記異なっている温度を除去するための前記工程は、前記物体のより冷たい領域により多くの熱を供給し、より熱い領域により少ない熱を供給する前記加熱素子配置(44)により達成される請求項30記載の方法。
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US10/431,758 US20040222210A1 (en) | 2003-05-08 | 2003-05-08 | Multi-zone ceramic heating system and method of manufacture thereof |
US10/431,758 | 2003-05-08 | ||
PCT/US2004/004251 WO2004102076A2 (en) | 2003-05-08 | 2004-02-13 | Multi-zone ceramic heating system and method of manufacture thereof |
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JP6084906B2 (ja) * | 2013-07-11 | 2017-02-22 | 日本碍子株式会社 | セラミックヒータ |
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- 2004-02-13 WO PCT/US2004/004251 patent/WO2004102076A2/en active Application Filing
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Also Published As
Publication number | Publication date |
---|---|
EP1621048B1 (en) | 2008-10-08 |
DE602004016985D1 (de) | 2008-11-20 |
US20040222210A1 (en) | 2004-11-11 |
ATE410905T1 (de) | 2008-10-15 |
WO2004102076A2 (en) | 2004-11-25 |
EP1621048A2 (en) | 2006-02-01 |
EP1621048A4 (en) | 2007-04-11 |
WO2004102076A3 (en) | 2005-06-16 |
JP4908217B2 (ja) | 2012-04-04 |
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