TWI259527B - Processing system and method for treating a substrate - Google Patents

Abstract

A method and system for trimming a feature on a substrate is described. During a chemical treatment of the substrate, the substrate is exposed to a gaseous chemistry, such as HF/NH3, under controlled conditions including surface temperature and gas pressure. An inert gas is also introduced, and the flow rate of the inert gas is selected in order to affect a target trim amount during the trimming of the feature.

Description

1259527 IX. INSTRUCTIONS: Interactive Spring Photographs of Related Applications This application is related to the copending U.S. Patent Application Serial No. 10/705,201, entitled "Processing System and Process for Processing Substrates" Method For Treating a Substrate), the application date is November 12, 2003; the US patent application serial number 10/705,200, entitled "Processing System and Method For Chemical Processing Substrate"

"Chemical Treating a Substrate"", application 11 November 12, 2003; US Patent Application Serial No. 10/704, 969, entitled "Processing System and Method For • Thermally Treating" a Substrate)", the filing date is November 12, 2003; the US patent application number 1〇/705,397, entitled "Methods and Apparatus for Insulating Adjacent Temperature Control Chambers" (Method and Apparatus F〇r

Thermally Insulating Adjacent Temperature Controlled Chambers)", the application date is 12th of the year of the continent; and the US patent application number 10/ΧΧΧ, ΠΧ, under the name "Use local pressure to adjust chemical oxidation and Syste, For Adjust"nTa hemical Oxide Removal Process Using Partial Pressure) 11 ^ : Part No. 46971469—__, the filing date is the same as the case. All the contents of the _ those applications are included in the reference materials. Technical field] The method and system are especially related to the kind of substrate [Prior Art] The wire or plate electro-engraving process is to follow the fine = stripping or scraping. The plasma side process is one "two turn substrate configuration" In the processing of the i-room - the substrate can be placed in m, the flow rate of 1259527 = seed = sub-dissociated gas (dlssociatlvegas) can be introduced into the chamber so that the - red pump section is added - the environmental clock force. The transmission of power by the infrasound F) is inductively or sub-decomposed to decompose certain types of environmental seam types. The range is adjusted to achieve the desired conditions for the reactants and ions, and the appropriate conditions for the ions. Used to etch various trenches in selected areas of the substrate: f-channels, contacts, gates, etc.). This requires etching of % 3 — Secret 1 () 2), low-k dielectric material, and polycrystalline silicon nitride. In contrast, the side features generally include a film that is formed by transferring the n pattern to the underside of various features. The reticle transfer is sufficient for the silk) + one of the patterns [invention] The method of cultivating in the form of a method for processing the substrate is processed in the following: chemical oxide removal The process towel is reached - on the substrate - the characteristic part - system = square =;: Γ ί side;, the process gas of the number; the middle: f: contains: set - the first - the beauty; te 卜 夕 &"; The hunting is performed by exposing the substrate using a 5 stencil formulation to chemically treat the soil; the "features; and substantially removing the trimming amount from the portion. Work method, it is another implementation example, the description - the processing of the substrate is added - using a chemical oxide removal process to trim a feature on a substrate 1259527 The following steps: decide on the feature - And the second process gas is one of the second process gases, and the first process gas is obtained by exposing the substrate to the number of the ports, and The target rod ^ private rolling body, the number of the feature portion, and "two to the chemical processing of the miscellaneous board plus 4i with s another:: implementation of the state" description - used to treat the substrate

Fossil eve feature - the amount of dressing, the method includes the following: 基板 成 : 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 西 西 西 西 西 西 西 西 西 西 西 西 西 西 西 西 西 西 西 西 西 西 西Process adjustment of the process recipe, with fresh Hit for chemical oxide removal 彳 部 借 借 借 配方 = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = The problem 3 of the measurement is introduced together; and substantially from the special 敕伊夕矛, 乡正里, wherein the amount of the argon gas system is increased to reduce the repair of another embodiment of the present invention In the state, a processing for processing a substrate is used to achieve a process on a substrate in a chemical oxide removal process, including a chemical processing system for The substrate is exposed to one second of the first process gas, one quantity of the second process gas, and one quantity of the blunt gas to change the plurality of exposed surface layers on the substrate; a heat treatment system for heat treating the substrate The chemically altered surface layer on the substrate; and a control , Which is coupled to the chemical treatment system and in particular to adjust the amount of formation of the noble gas, in order to achieve the trimming amount. [Embodiment] In the material processing methodology, pattern etching comprises applying a thin layer (for example, photoresist) of a photosensitive material to an upper surface of a substrate, which is then patterned to provide a light 1259527 (four) iculex and related The optical element V is used to charge the developing material to remove the photosensitive material. The exposure is followed by the lower or the unexposed area (when under the negative photoresist). In the case of the first resistance example, the reticle pattern in the optical layer is in the engraved feature, and the side step of the sensation is transferred to the chemical treatment of the exposed surface of the use-separate cover layer to change the hard light. The surface of the cover layer = the exposed surface of the hard mask layer is processed to release the change = chemistry - 2 Γ U1A appears to be trimmed by using, for example, a mask layer. The processing system 1 contains - The first-place coffee., contains -埶 processing in the f system, and the second processing system 20 can include two = ί ί, ί 弟 二 processing system 2g can include - substrate cleaning system, ΐΐ; 4 ίί ΐ. Also, as shown As shown in FIG. 1A, a transfer system 30 can be connected to Li: to transfer the substrate in and out. A processing system ι〇 exchanges the substrate with the second meeting, the first and second processes 10j 10, 2: 乂 and the transmission system % can be included in the multi-component manufacturing For example, 'multi-component manufacturing system 40 can allow substrate transfer system, deposition system, coating system, system, system metric 2; In order to isolate the occurrence of the first and second systems, the insulative assembly 50 may be utilized to connect each system. For example, the insulation 1259527, the member 50 may include an insulating component that provides insulation and provides vacuum insulation. At least one of the gate valve assemblies. Of course, the processing systems 1 and 2 can be disposed in any order and the delivery system 30. Alternatively, in another embodiment, FIG. 1B appears to be utilized by using, for example, a mask. Layer: One process to process a substrate processing system 100. The processing system 100 includes a first processing system 110 and a second processing system 120. For example, the first processing system 110 can include a chemical processing system. The second processing system 12A may include a heat treatment system. Alternatively, the second processing system 120 may include a substrate cleaning system, such as a water washing system. Also, as shown in FIG. 1B, a delivery system 130 may be coupled to Ludi. A processing system 11 is configured to transport the substrate into and out of the first processing system 110 and can be coupled to the processing system 120 for transporting the substrate into and out of the second processing system. Further, the delivery system 130 can be coupled to one or more substrates. The boat box (not shown) is transferred to the substrate. Although Figure 1B shows only two processing systems, other processing systems can access the package, such as surname system, deposition system, coating system, patterning system, metrology system, etc. A delivery system 130 of such a device. In order to isolate the processes occurring in the first and second systems, an insulating component 15 can be utilized to connect each system. For example, the insulating component 15A may include at least one of an insulating component that provides insulation and a gate valve component that provides vacuum insulation. Moreover, for example, delivery system 130 can be part of an insulated component 150. • Alternatively, in another embodiment, Figure 1C illustrates the processing of a substrate processing system 6 by using a process such as a mask layer b. The processing system 6 (9) includes a first processing system 610 and a second processing system 62, wherein the first processing system is stacked on the second processing system 62 in a vertical direction as shown. By way of example, the first processing system 610 can include a chemical processing system and the second processing system can include a thermal processing system. Alternatively, the second processing system 62 can include a substrate cleaning system, such as a water wash system. Also, as shown in FIG. 1C, a transport system 63A can be coupled to the first processing system 610 for transporting substrates into and out of the first processing system 610/ and can be coupled to the second processing system 62 to transport substrates into and out of the second processing. System 620. In addition, the transport system 63 can be combined with one or more substrate boat cassettes (the 1259527 does not display a clever substrate. Although Figure lc shows only two processing systems, it adds a system, a deposition system, a coating system, Patterning system ' ί's transport system 630. In order to isolate the first and the other, an insulating component 650 can be used to connect each of the insulating components 650 can include an insulating component that provides thermal insulation. And providing the direct as the insulation group. In addition, the "transport system 630 can be the first processing system 1 of the first green processing system - the processing system 10 and ^, : 2f4 delivery system 30 pass, and the second detailed door 〇 々 丄 4 ^ 丄 14 pass, between the two processing systems. Second eloTM ^ knife ^ ^ y - the output σ part to allow the substrate to pass through it. Now f test 2, provided to perform - substrate The chemical treatment of the coil processing is one of the processing systems 200. The processing system 2〇〇 contains a servant wind: ..., the heat treatment system "can be used by using - the absolute number and the parts 23G ^, t and the heat treatment chamber 221 pieces 2:= absolutely = the standard - the substrate 242; - straight ί f / 211 thermal insulation The gas is introduced into the chemical treatment chamber 211 by the evacuation chemical treatment chamber 211. The gas is introduced into the chemical treatment chamber for processing as shown in Figs. 2 and 5, and is processed in the chamber 262. Refining heat treatment chamber '2=and

10 1259527 it to Tata hot and configured to support a substrate 242; a vacuum pumping system hollow heat treatment chamber 221; and a substrate lifting rod assembly 290, which can be used in the chamber 22 Support plane (solid line) / its two %9, 27〇 (dashed line) or vertically move between the transfer planes in between one I M2. The heat treatment chamber 221 may further include an upper assembly 284. 1 ^ processing chamber 211, heat treatment chamber 221 and heat insulating member 23 〇 =, : /, with the opening portion 294, - the substrate can be transported through the common opening portion 294, the common opening portion 294 can be used A gate valve assembly 296 is sealed to allow for independent processing in the two chambers, 221. Further, the delivery opening portion 298 is formed in the heat treatment chamber 221 to allow the substrate to be exchanged as shown in Fig. 1A. For example, a second thermal insulation group M is now used to terminate the heat treatment chamber 221 with a delivery system (not shown). Although the opening portion 298 is shown as a portion of the heat treatment chamber 221 (not shown in FIG. 1A), the delivery opening portion 298 may be formed in the chemical processing chamber 211 instead of in the heat (as shown in FIG. 1 (d)). Position), or the delivery opening I 8 may be formed in both the chemical processing chamber 211 and the heat treatment chamber 221 (as shown in Fig. 1C1C). As shown in Figures 2 and 3, the chemical processing system 21A includes a substrate support portion 24, a substrate support portion assembly 244, to provide a plurality of thermal control and processing substrates 242 = operational functions. The substrate support portion 240 and the substrate support assembly 244 can include a static, clamping system (or mechanical clamping system) to electrically (or mechanically) clamp the substrate 2 to the substrate support portion 240. Furthermore, the substrate support portion 24 may further comprise a cooling system having a recirculating coolant flow that receives heat from the substrate support portion to transfer heat to the hot parent converter system (not shown). Or when heating, transfer the crucible from the heat exchanger. In addition, the heat transfer gas can be transported to the back surface of the substrate 242 via a back-side gas system, for example, to improve the gas-gap thermal conduction between the substrate 242 and the substrate support portion 24b. For example, a hot emulsion provided to the back side of the substrate Mg is packaged, for example? Helium, argon, helium, thieves, process gases, or other gases such as oxygen, nitrogen or hydrogen. When the temperature is raised or lowered, the temperature control base is required. 11 1259527 Areas Hr are, and _3 types are f:. For example, a backside gas system can include, for example, two inter-system gas distribution systems in which the backside gas can be independently varied between the center and the edge of the substrate 242. In the heating/cooling of the gas-curing member, the heating device is cooled, and the chamber 24 of the chemical processing chamber 211 is used to perform a plurality of the above functions. The control substrate L substrate support portion includes: a chamber engagement member 31〇 connected to the lower wall of the chamber 211; an insulating member 312 connected to the chamber, and a temperature control member 314 connected To the insulating member 312. The temperature control reads 310, 314 can be fabricated, for example, from electrically and thermally conductive materials such as Sho, stainless steel, and the like. The insulating member 312 can be heat resistant, such as quartz, alumina, Teflon, etc.; the temperature control element 314 can include, for example, a cooling channel, a heating channel, a resistor plus, a component, or a thermoelectric component. Temperature control element. For example, as illustrated, blood control element 314 includes a coolant inlet 322 and a coolant outlet 324, a coolant passage 320. The coolant passage 32 can be spirally passed through, for example, within the temperature control element, which allows for a flow rate of one of the coolants such as water, Fiu〇rinert (trade name), and Lu Galden HT 135 (trade name), in order to Conduction-convection cooling of the west control element 314. Alternatively, temperature control component 314 can include an array of /, thermoelectric elements that can heat or cool a substrate depending on the direction of current flow through the various components. An exemplary thermoelectric element is commercially available from Advancd.

One component of Thermoelectric, model ST-127-i· 4-8· 5M (4 〇 X 40诵X 3· 4 mm thermoelectric device with a maximum thermal energy transfer of 72 f). In addition, the substrate support portion 300 may further include an electrostatic chuck (esc) 328 including a ceramic layer 330, one of the clamping electrodes 332 embedded therein, and connected by using an electrical connection portion 336. To a high voltage (HV) DC voltage source 334 of the clamping electrode 332. Both 3& can be unipolar or bipolar. The design and implementation of this electrostatic clamp is familiar with electrostatic clamps 12 1259527

This technique is well known to those skilled in the art. In addition, the substrate supporting portion 300 may further include a back surface gas supply system 340 for transferring a heat transfer gas (for example, helium, argon, or neon via at least one gas supply line 342 and at least one of the plurality of holes and the channel). The blunt gas, process gas, or other gas containing oxygen, nitrogen or hydrogen is supplied to the back side of the substrate 242. The backside gas supply 340 can be, for example, a multi-zone supply system of one of two zone (center-edge) systems where the backside pressure can vary radially from the center to the edge. The insulating member 312 can further include an insulating gap 350 to provide additional thermal insulation between the temperature control element 314. The adiabatic gap 350 can be evacuated by using an exhaust system (not shown) or as part of the vacuum pumping system 25 or connected to a vacuum line of a gas supply (not shown) to change its heat transfer coefficient. . The gas supply portion can be utilized, for example, to connect the heat transfer gas to the back surface gas supply portion 34 of the back surface of the substrate 242. The engaging element 310 can further include a lift pin assembly 36〇 that can lift and lower three or more lift pins 362 to vertically move the substrate 242 back and forth to one of the upper surface of the substrate support 30 and the processing system. Transfer plane. Each of the elements 310-, 312, and 314 further includes a fastening device (e.g., a bolt and a thread - a member is fastened to the other member, and the substrate support portion 300 is fixed to the chemical processing chamber 2). Each element 310, 312 and 314 helps

Components, and where f is to maintain the vacuum integrity of the jade system = off the vacuum seal of the synthetic rubber ring.埶^ control pf Ϊ 卩 卩 仙 仙 仙 temperature can be used by using, for example, a thermocouple (such as K-type plus ..., 7G pieces of flow or voltage 敎 驻 罢 罢 影响 影响 影响 影响 影响 影响 影响 影响 影响 影响 影响 影响 影响A change in the temperature of the U and/or the temperature of the substrate 242. The tea treatments 02 and 3, the chemical processing system 210 includes a gas distribution system 260. 13 1259527 In one embodiment, As shown in Fig. 8, a gas distribution system 400 includes a showerhead gas injection system having a gas distribution assembly 402 and a gas distribution plate 404 coupled to the gas distribution assembly 402 and specifically formed to form a gas distribution plenum 406. The gas distribution plenum 406 can include one or more gas distribution baffles. The gas distribution plate 404 further includes one or more gas distribution holes 408 for distributing a process gas from the gas distribution plenum 406 to the chemical processing chamber. Process space within 211. Additionally, one or more gas supply lines 410, 410', etc., may be coupled to gas distribution plenum 406 via a gas distribution assembly, for example, to supply one or more gases The process gas may, for example, comprise NH3, HF, H2, 〇2, CO, C〇2, Ar, He, etc. In another embodiment, as shown in Figures 9A and 9B (expanded view of Figure 9A), A gas distribution system 420 for dispensing a process gas comprising at least two gases comprises: a gas distribution assembly 422 having one or more components 424, 426 and 428; a first gas distribution plate 430 coupled to the gas distribution The assembly 422 is specifically formed to connect a process space of the first gas and the chemical processing chamber 211; and a second gas distribution plate 432 is coupled to the first gas distribution plate 430 and specifically formed to connect a second gas and chemistry The process space of the chamber 211 is processed. The first gas distribution plate 430 forms a first gas distribution plenum 440 when connected to the gas distribution assembly 422. Further, the second gas distribution plate 432 is coupled to the first gas distribution plate 430. A φ second gas distribution plenum 442 is formed. Although not shown, the gas distribution plenums 440, 442 may include one or more gas distribution baffles. The second gas distribution plate 432 further includes: a first array A plurality of apertures 444 coupled to and co-produced with one or more channels 446 formed in an array within the first gas distribution plate 430; and one or more apertures 448 of a second array. One or more One or more apertures 444 of the first array associated with the array of channels 446 are specifically formed to distribute the first gas from the first gas distribution plenum 440 to the process chamber 211. One or more apertures 448 are specifically formed to distribute the second gas from the second gas distribution plenum 442 to the process space of the chemical processing chamber 211. ‘Private gases may include, for example, MN3, HF, H2, 〇2, CO, C〇2, Ar, He, and the like. because

14 1259527 ίί Ζΐϊί a gas ί second gas system is independently introduced into the process space 示 shows that it will not change from each other outside the clothing space. One of the bodies can be connected to the first gas distribution plenum 44 经由 via the =: supply passage formed in the gas ageing component 422. The second gas, a gas, can be coupled to the second gas distribution plenum 442 via a supply 452 formed in the gas distribution assembly 422. The processing system 210 further comprises: maintaining at - one of the high temperature, 7 I I to 211 °, for example, 'the wall heating element 2 can be connected to the Ϊ;; ίίίίίί 266 织 ^ 70 parts of recording alloy and brick 4 resistance heater, such as filament. Shangyu Shangke ^ «Ιι 二Akrotha is made by Bethel, (the name of the "manufactured by the company". The Kanthal family contains ferrite

Nikrothal > NiCrFe) 〇, two scatters as heat, therefore, wall face (four) unit 268 1 ^ ° ^ two f power supply. For example, the wall heating element includes an -cooling element: two jit; in the processing; the processing chamber 211 is also a thermocouple (for example, a K-type galvanic couple, Pt ^ ^ cocoa by using, for example, an aging face. The temperature sensing device of the $4 sense sensor is subjected to the temperature measurement by the temperature control unit to control the temperature of the chemical processing chamber 211. The warm-production 3 processing system 21 G may further comprise a heating element element 267 that can be maintained in any selected fit, and the gas distribution enthalpy, for example, a heating element, such as Examples of materials which are commercially available for the manufacture of resistive heating elements include 1259527 K=haL, Chi Rththal and Akr〇thal, which are named by Kanthal Gold of Bethel, CT: - The family contains ferrites. The second f) 〇_ family contains austenitic alloys (NiCr, 1 rFe). When the current flows through the filament, the power is dissipated as heat: the second temperature is controlled by the unit lake, for example, the controllable power supply for the body ii 2S H is the heating element 267 can contain about 1 qing W (or approximately 5 = power density) One of the double-interval paste rubber heaters (approx. thickness). Gas = the temperature of the secret 260 can be made by making _ such as thermoelectricity

The temperature sensing device of Pt sensing II, etc. is monitored. In addition, the control and the amount of gas are used to control the temperature of the gas distribution system: system = temperature of the distribution system. Figure δ, the gas distribution system ^ degree: degree control system. Alternatively or additionally, cooling may be employed in any of the embodiments. Still, the vacuum pumping system 25 and the vacuum evacuation system 25 can be used to suppress the chamber pressure. The vacuum pump 252 can comprise, for example, I: 4 2 f, about 5 liters (and greater than) the vacuum rate* - turbomolecular direct pump = MP). For example, the TMp can be a touch-sensitive STp-de-vacuum pump, or a beta vacuum pump. Cao is useful for machining (generally less than about 5 () mT〇 = €)). For high pressure (i.e., greater than about (10) rainbow (also I can't use it - mechanical pressurization pump and dry low vacuum cultivator. Right Fig. 3, chemical treatment system 210 can further include a controller 218, 苴And the 11' memory, and the digit 1/(3埠, which is capable of generating a control voltage sufficient to 'pass' the system 210 and monitor the output from, for example, temperature and pressure: ίίΐ: ΐίί. In addition, the controller 218

The element 244, the gas distribution system 260, the true miscellaneous system degree control 2 = β, the wall temperature f" unit 268, and the gas distribution system temperature 5 can exchange information with them. For example, 'can be stored in The if t type starts the input to the chemical processing system according to a process recipe, and the controller 218 is a DELL PRECISION 16 1259527 WORKSTA-T(10)(10) ", which can be obtained from Dirk _'丨Austin's _ public in "in the case, Figure 4 shows - chemical processing system 2, at least one buckle 214 and at least one drum chain 2" dense light to the window 215 and at least one pressure sensing Device 216. , Feng Ji Qiu Qi _ 'The heat treatment secret 220 more includes - temperature control substrate support room 221 r? part i7G contains hunting system - scale 274 heat treatment capacity =: stainless steel or nickel made 'and thermal barrier 274 can be: Or it is made by Shiyang. The substrate supporting portion 27 () further includes a substrate supporting portion temperature control unit 278 which is buried therein. Adding a ^ element ^ such as tungsten, nickel-chromium alloy, _ alloy, nitriding, etc., such as filament. Examples of the manufactured resistance-twisting elements that are available on the top include Kan_, Nikn)thal and Akrothal, and A is a metal alloy made by et=l £kKanthal. j ^ „ Nikrothal ^ ^ ^ 3 body 5 * (10) Cr, hCrFe). When a current flows through the filament, the power is dissipated as: ,, therefore, the substrate support temperature control unit 278 can include, for example, a controllable source supply portion, or the 'temperature-controlled substrate support portion 27Q can be It is commercially available from $40 to approximately 45 (TC's maximum operating temperature of Watl〇w (131() eight)

Kn^land Dr., Batavia' IL, 60510) obtained - casting heater, or ^ 3 mouse material material - film heater, which can also be taken from Wati〇w company and has a like 〇 (Tc-like high operating temperature with power up to about 23 w/cm2 read: or 'can be-cooled element incorporated into the substrate support 27〇. The temperature of the substrate support 270 can be used as a thermocouple (5) For example, the thermal inductance i is monitored and monitored. In addition, a controller can utilize the feedback of the temperature & temperature control unit, the substrate, and, in addition, the substrate temperature can be obtained by using, for example, a fiber optic thermometer. - Temperature sensing device or - Band edge temperature measurement system rides to the surveillance, where the fiber thermometer supplier 1259527 is available from Advanced Energies (1625 Sharp point drive, Fort)

Collms, CO, 80525), model OR2000F, with a measurement range from about 5 〇 to J about 20, :C, and an accuracy of about plus or minus 15 t, while the band edge measurement system is as in the US patent under trial. The application number 丨〇/168544's “Shen Qing 曰 is July 2, 2002, the contents of which are hereby incorporated by reference. Further, the heat treatment system 220 further includes one of the selected temperatures, and the w degree = heat treatment. For example, a hot wall surface is heated by two to: a soil surface control unit 281, and the hot wall surface heating element 283 can be formed into a processing chamber 22, for example, containing tungsten, nickel, for example A resistive heater element such as a chrome alloy, an aluminum-iron alloy, or an aluminum nitride, such as a filament. The material of the commercially available resistive heating element contains Kantha Bux 0 ga 1 and the parent IU is the metal w°H manufactured by Bethe1, CT^Kanthal Company. The Kanthal family contains ferrite alloys (FeCrA1), while the upper:0:bis family contains austenitic alloys (Nicr, NicrFe). When the current flows through the lamp j ' power is dissipated, the acid surface temperature control unit 281 can be learned as a DC power supply. For example, the hot wall heating element 28°3 can be 6^53lf)iir^Watl〇WM〇31〇KingSlandDr.'Batavia,IL, collet heater° or 'or in addition, in heat=each to 221 can be used Cooling element. The temperature of the heat treatment chamber 221 is controlled by the temperature measurement as a feedback to the hot wall temperature & 281 to control the temperature production of the heat treatment chamber 221 . The upper portion and the 5' heat treatment system 220 further comprise an upper member 284. The member 284 can include, for example, a gas injection system for guiding a blown body to the heat treatment chamber 22 or heat treatment chamber #^7卩Component separation - gas injection system. _ _, - blowing / 3 = cleaning gas can be led to the heat treatment chamber through it" and more including at least - hinge, - handle and - buckle 1259527 The ΐΐ member is latched in the - closed position. In an alternative embodiment, η 2 弋 can be packaged as "one of the array of tungsten elements of the array, and the radiation of the tungsten lamp tube, if t, leans against the blade 5 of the substrate lifting rod assembly 290 (see Figure ϋ 容 容In this case, the substrate support portion 270 may be excluded from the heat treatment unit 220 and may further include an assembly 284 that may be maintained at a selected temperature. For example, t, the upper assembly heating element 28 ίίΓ unit 286, and the upper assembly heating element 285 An example of a material that can be made of a ferroelectric heater, such as a filament ik, a resistor, and a 35-component material, includes Kanthal, α, =roi nn ai 'which is made by this, ct Kay her company's ief t ΐΐΐ (four) standard name ° Kanthal family contains ferrite alloy (FeCrAl), while section 1 family contains austenitic alloy (ship, age 3, power is dissipated as heat, so the upper component temperature The control ^ f Z = 31 can control the DC power supply. For example, the upper group = heating element 285 can comprise a double interval stone smoke rubber heater having about w (or about 5 dragons 2 degrees) (about i Ugly thick. Upper part 28^ temperature can be turned off A thermocouple (e.g., a κ-type thermoelectric iif ϊ, is monitored. Further, the woven control is controlled by the temperature control of the upper 286 to control the temperature of the upper assembly 284. The upper assembly 284 may or additionally include a cooling element. _ If H2 and 5, the heat treatment system 220 further includes a substrate lifting rod assembly f Γ 90 is specifically formed to lower the substrate 242 to the substrate ' surface ' and the substrate 242, 'from the substrate branch portion 270 - 1 = :, from - to the support plane 'or the transfer plane between them. On the transfer plane, the substrate 242 can be used interchangeably with the substrate to be used to transport the substrate into and out of the chemical and thermal processing chambers 2ii, 221. On the support plane, the substrate 242, , can be cooled while another substrate is exchanged between the transport system and the chemical and heat treatment chamber 21 221 . For example, 19 1259527 three soil plate lifting rod assemblies 290 comprise a blade 500 having three or a tab 510 for coupling the substrate lifter assembly 290 to the heat treatment volume φ@@- flange 520 and for allowing the blade 500 to be within the heat treatment chamber 221, a drive system 530. 510 series specific shape In order to record the substrate, the recess is in the receiving cavity 540 in the substrate support (see Figure 5). The drive system 530 can be driven by two kinds of oxygen. The system 'is designed to meet a variety of different specifications, including package, steam red stroke speed, positional accuracy, non-rotational accuracy, etc., which is well known to those skilled in the art of designing a pneumatic drive system. 2 and 5, the heat treatment system 220 further includes a vacuum pumping system. The rolling system 280 can include, for example, a vacuum pump and a valve such as a butterfly or a butterfly (10). Vacuum pumps can be useful, for example, to have a turbomolecular vacuum pump (TMP) of up to about 5000 liters per second (and one of the evacuation rates. TMP is typically about 50 raTorr for low pressure processing). For high pressure machining (i.e., greater than about U mTcfr), a mechanical pressurizing pump and a dry low vacuum pump can be used. Tea Test Figure 5 'The heat treatment system 22Q may further comprise a controller 275, 1 and have = treatment H, record (four), and - digit 1 / () 埠 can be sufficient to transfer and enter into the heat treatment system 22 〇 and monitor the heat treatment The control voltage of the output of system (10). In addition, the controller 275 can be coupled to the substrate support temperature control unit =, upper, component temperature control unit Na, upper assembly 284, hot wall temperature control 1-3, vacuum pumping system 280, and substrate lifter assembly 29q. Can exchange information with their parents. For example, one of the programs stored in the memory can be used to initiate these inputs to the aforementioned components of the thermal processing system 220 in accordance with a process recipe. One of the control circles 275 is a DELL PRECISI〇N w〇RKSTATI〇N 61〇TM, two = obtained by Dell Company of Austin, Sas. In an alternate embodiment, controllers 218 and 275 can be the same controller. In one example, FIG. 6 shows a heat treatment system 22 that further includes a sealing cover 222, an optical inspection window, 225, and at least one pressure sensing device 226 in the form of one of m22i3 and at least one of the keys 224. In addition, the heat treatment system 22〇 further includes a 20 1259527 substrate detecting system 227 to confirm whether a substrate is in a supporting singulation system, for example, including a Keyence digital laser sensor. Figures 12, 13 and 14 illustrate side, side and side cross-sectional views, respectively, of the thermal insulation assembly 230. A similar assembly can also be used as the thermal insulation component 5〇- or 650. The heat insulating assembly 230 can include: an interface plate 231 coupled to the processing and processing chamber 211 (shown in FIG. 12) and specifically formed to be formed in the 221 (see FIG. 14) and the chemical processing chamber. A structural contact edge plate 232 between 211 is coupled to the interface plate 231 and is specifically formed to reduce thermal contact between the heat treatment -221 and the chemical processing chamber 211. Further, in Fig. 12, the interface 231 includes one or more structural contact elements 233 having an engagement surface that is specifically formed to interface with one of the bonding surfaces of the heat treatment chamber 221. The interface ^ 231 may be made of a metal such as aluminum, stainless steel or the like to form a rigid contact between the two chambers 211, 221. The insulating plate 232 may be made of a material having a low heat transfer coefficient such as Teflon, alumina, quartz, or the like. An insulating component is described in more detail in the U.S. Application Serial No. 1/7,5,397, filed on November 12, 2003, entitled "Method and Apparatus For Thermally Insulating Temperature Control Room" (Method and Apparatus For Thermally Insulating Adjacent Temperature Controlled Chambers)", and its full range of people's references. - As shown in Figures 2 and 14, the gate valve assembly 296 is utilized to vertically move a gate valve % 297 to open and close the common opening portion 294. The gate valve assembly 296 can further include a gate valve adapter plate 239 that provides a vacuum seal with one of the interface plates 231 and provides a seal with one of the gate valves 297. The two valleys 211, 221 can be connected to each other by using one or more alignment devices 235 and terminating one or more alignment receptors 235 in FIG. 6, and by using One or more fastening devices 236 (ie, bolts) extending over one of the chambers (eg, chemical processing chamber 211) and ending in a second volume (eg, heat treatment chamber 221) They are connected to one another as in one or more receiving devices 236' (i.e., threaded holes) in FIG. As shown in FIG. 14, a vacuum sealing portion can be formed between the insulating plate 21 1259527 Z, the true Hit 1, the closed mating plate 239, and the chemical processing chamber 211 by using, for example, a synthetic rubber ring-shaped ring seal portion 238. 22^1= these elements formed on the interface plate 231 and the multi-processing chamber 211 and the heat treatment chamber 221 by the 〇-ring seal portion 238

Kapton (trademark ί) has a protective barrier. The protective barrier may comprise at least one of ceramic crucible + squirrel, surface anodized, such as alumina, cerium oxide c, plasma electrolytic oxidation, and the like. As shown in Fig. _, the method is based on one of the steps of the process board to support the riding of the pin and accept the base: ί, t substrate support. Then, the substrate is fixed to the substrate support portion by using, for example, an electrostatic gas supply, and the heat transfer is used to set one or more chemical processing parameters for the chemical dust of the substrate. The chemical protection parameters include - chemical processing degree, - chemical processing gas temperature and chemical treatment; f = rate at least - term. For example, the following one or more of the following may be generated by connecting to a wall surface temperature control unit and a first temperature sensing device, Nantian, = pull state, for chemical processing capacity. One of the chambers is used to chemically treat the chamber temperature; 2) the temperature distribution unit of the joint distribution system and the second temperature sensing device are controlled by the slave to the chemical processing chamber - the chemical processing gas distribution system / the dish Controlling H by setting to at least one temperature control element and a third temperature sensing device to set-chemically treat the temperature of the substrate support portion; 4) utilizing a temperature control element connected to the base, the floor, the back gas supply system At least one with a refreshing system f, and - a fourth temperature sensing device - the controller sets the substrate temperature to be processed; 5) utilizes at least one connected to a vacuum pumping system and a gas distribution system And - the pressure system - control is set to the chemical treatment 22 1259527 1 - plus reading force; and / or the squall is connected to the domain of the two kinds of quality control - (four) H to set - a The remaining gas flow rate. The system is chemically treated under the conditions set forth in step 820 to hold the Bell-Di-(4). For example, paragraph -

It takes about 480 seconds. #冈"1疋8,"丄U In step 840, the substrate is transferred from the chemical processing chamber to the heat treatment chamber. In this period =, the substrate holder is removed and the heat transfer gas is stopped to flow to the back side of the substrate. The substrate is vertically raised from the support portion to the conveying plane by the clever miscellaneous pieces in the substrate support. The transport system accepts the substrate from the lift pins and places the substrate in a heat treatment system, _. In the shot, the substrate lifter assembly accepts the substrate from the transfer system and lowers the substrate to the substrate support. In step 850, a plurality of thermal processing parameters are set for heat treatment of the substrate. For example, a, the one or more thermal processing parameters include at least one of a heat treatment wall temperature, a heat treatment upper component temperature, a heat treatment substrate temperature, a heat treatment substrate support temperature, a heat treatment substrate temperature, and a heat treatment process pressure. For example, one or more of the following phenomena may be generated: 1) using a thermal wall temperature control unit connected to one of the heat treatment chambers and a controller of a first temperature sensing device to set a heat treatment wall temperature 2) using a controller connected to one of the upper component temperature control unit and a second temperature sensing device to set a heat treatment = component temperature, 3) using a substrate connected to the thermal substrate support portion a temperature control unit of the branch building and a controller of a third temperature sensing device to set a heat treatment substrate support temperature; 4) using a substrate support portion temperature connected to the thermal substrate support portion, the unit and a fourth a temperature sensing device and a controller coupled to the substrate to determine a heat treated substrate temperature; and/or 5) utilizing a controller coupled to a vacuum pumping system and a pressure sensing device The heat treatment processing pressure is set in the heat treatment chamber. The substrate is heat treated for a second period of time in the step 860' under the conditions set forth in step 850. For example, the second period of time can range from approximately 1 〇 to 23 1259527 approximately 480 seconds. In one example, as shown in Figure 2, the processing system 2 can be a chemical oxidation f-removal system for trimming the dioxide hard mask. The processing system includes a treatment system 210' for chemically treating the exposed surface layer of the surface layer of the oxide, for example, on the -1 surface to expose the surface chemical chemistry of the surface to affect the surface layer. In addition, processing system 200 includes a thermal processing system 22 for heat treating the substrate to thereby raise the substrate temperature to release (or vapor) the chemically altered exposed surface layer on the substrate. . ^ In the chemical processing system 210, the process space 2β2 is evacuated (see Figure 2) and the HF and Excise-Process gases are included. Alternatively, the process gas may further comprise a carrier gas. The carrier gas may, for example, comprise an inert gas such as argon, helium or the like. The processing pressure can range from about 1 to about 1 〇〇 mT rr, and for example, the general range can range from about 2 to about 25 mTorr. Each type of process gas flow rate can range from about 1 to about 200 seem, and can range from about 10 to about 1 seem. Although the vacuum pumping system 250 is shown in Figures 2 and 3 to access the chemical processing chamber 211 from this side, a uniform (three-dimensional) pressure field can be achieved. The gauge shows the percentage change in pressure on the surface of the substrate as a function of the processing pressure and the spacing between the gas distribution system 260 and the upper surface of the substrate 242. Table 1 (%) h (pitch) Moment 50 mm 62 75 100 200 20 mTorr 9 7 4 3 [6 ΝΑ ΝΑ ΝΑ ΝΑ ΝΑ ΝΑ 0.75 0.42 ΝΑ 3.1 1· 6 1.2 ΝΑ ΝΑ 5. 9 2.8 ΝΑ ΝΑ ΝΑ ΝΑ 3.5 3.1 1.7 0.33 Further, the chemical processing chamber 211 can be heated to a temperature ranging from about 10 ° C to about 200 ° C, and for example, the temperature can range from about 35. (: to approximately 55. (:. This 24 1259527 external 'gas distribution system can be heated to a temperature ranging from 1 〇. 匸 to 2 (10). c, and such as temperature can range from about 4 〇. (: to about 6) (rC. The substrate can be maintained at a temperature ranging from $==_, and the substrate temperature can range from approximately to the heat treatment system 220, and the heat treatment chamber 221 can be heated to a range from about 20C to about 20 (TC The temperature, for example, the temperature can range from about 75 〇 to ioo ° C. In addition, the upper component can be heated to a temperature ranging from about 2 (rc to about 2 〇 oc, and for example, the temperature can range from about 75 〇 to about 1 〇〇艽. _, can be heated beyond the range from about l〇 (TC to about 20 (rc of about 1 〇〇 ^ / m degrees. For example, the temperature can range from about 1〇〇艺至约1邡.^.1化=====Processing nowhere to be under the enchantment of the ship. ················································· The chemical treatment of the emulsion exceeds about 25 exposures per pass;" and the chemical treatment of the ozone problem every (10) seconds It is less than 1 moment. These treatments can also produce: £β tear:, ====: to the chemical and Jiuli ^: outside the body, the first process gas system is imported into the process space as one of the gases The two garments of the mixture "the system is mixed and #_ again, as described above, for example, one of the inert gases can be made of a chemically inert gas, the body is HF-, and the second process gas is excited by the second process and the second process gas. Other than, or any of the two 立立^弟7, if it contains argon. Any 17, and the mouth is > into. The inert gas can be 譬, and the six middle 'chlorine gas system is introduced into the second process gas leg 3, And as the gas-gas rate increases, the observed amount of trimming mouse milk Figure 16 shows a reduction in the amount of meal 詈 炎 & 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 The substrate support temperature is about 2 (TC, CCmJ pressure is about 15 fflTorr, °C, and the wall surface temperature of the door chamber exposed to the HF/Nfib chemical agent is about 40 B between the plates, about 56 B, , for 60 shifts, in the gas distribution plate with a base of about 40 sccm. For example, you can use Tua from about 〇 Change to (oirve fits) to define a relationship between the amount of trimming and the flow rate of one curve of Beca and the flow rate of the blunt gas to define a relationship between the amount of repair and the rate of blunt gas. In the case of the second process gas, the relationship between the process gas and the process gas. For example, the gas flow rate of a few deniers and a blunt gas, the gas flow rate, the inclusion-mass flow rate, - Moore In another example, Figure 17 shows the use of the non-process diagrams provided in Table 2. Figure 17 shows the flow rate of argon as a function of the trimming amount of the case. For example, in the experimental data in Figure 17 (an emulsification 3 is used to define 4 or more between the trimming amount and the flow rate of pure gas: in Figure P, it shows several processing ranges. In a _ f 吉; (trimming amount) changed from about 2 nm to about 6 in 1 dry f in two systems: process results (dressing amount) changed from about 6 nm to about 1 in the third processing range The process result (trimming amount) is from about 17.3 nm = a 23 nm. In an alternative embodiment, there may be some = approximately different. Work circumference, and the limit may be 26 1259527 Table 2

Trimming (nm) Ar(sccm) Formulation 2 219 A 3 156 A 4 107 A 5 73.8 A 6 53.2 A 7 100 B 8 74.5 B 9 56.6 B 10 44.3 B 11 36.1 B 12 30.6 B 13 26.8 B 14 24 B 15 21.8 B 16 19.9 B 17 18.2 B 18 16.5 B 19 14 9 B 20 13.3 B 21 11.9 B 22 10.6 B 23 9.5 B In each machining range, a program can be used to calculate the process results (dressing amount) and process parameters ( The relationship between gas flow). The process recipe can include at least one of the following: a nominal formulation component, a static formulation component, and a prescription model component. 27 1259527 Alternatively, some different ingredients and/or different types of ingredients may be used. As shown in the illustrated embodiment, the process recipe used in the first processing range may include a nominal formulation component, a static formulation A component, and a prescription model A component; the process recipe used in the second processing range may include a The rated formulation component, a static formulation B component, and a prescription model B1 component; and the process recipe used in the third processing range, may include a nominal formulation component, a static formulation B component, and a prescription model B2 component. For example, the nominal formulation component spans the entire range of trim data, that is, one trim from 2 nm to 23 nm, as shown in Figure 17. In addition, for example, the nominal formulation component can be divided into two or more static formulation components, that is, the static formulation A component and the static formulation B component, as shown in FIG. It can be a range of trimming _ quantity (ie, component A spanning one of 2 nm to 6 nm, and component ^ B spanning one of 6 nm to 23 nm, see Figure 17) to design each static formula Ingredients (for example, ingredients A and B). Furthermore, each static formulation component can comprise a different amount of the first reactant, a different amount of the second reactant, and a different process pressure (eg, the amount of the first reactant, the amount of the second reactant) The process pressure is fixed for the full range of the static formulation A component, and the amount of the first reactant, the amount of the second reactant, and the process pressure are all for the entire range of the static component. stable). Further, for example, each static formulation. component (ie, components A and B) can be represented by one or more prescription model components. For example, as shown in Fig. 17, the static formula A component is represented by a prescription model component (in other words, the prescription model A component), and the static formula B component is represented by two prescription model components (in other words, the prescription model B1) Composition and prescription model β2 component). The use of more than two prescription model components may, for example, allow for the use of different model fits = columns such as 'using a polynomial, a power law, an exponential law, etc." to obtain the best The data is fitted to different regions of the static formulation component with 0. For example, Figure 18 shows a control surface type 9〇〇, which shows the flow of argon gas between j(sccm) and trimming amount (nm). a relationship. The control model 9 shows that there is a first process recipe for a first processing range of 91〇, and a second process recipe for a second 28 1259527. Formulation 91 corresponds to a flow rate of HF of about 14 seem, a flow rate of NH3 of about 7 sccm, and a pressure of about 14 mTo. The second process recipe 920 corresponds to one of HF of about 5 〇seem. The flow rate, a flow rate of about 25 sccq12NH3, and a pressure of about 10 mTorr. ' ^ Use the multiple curve fit of the experimental data in Figure 18 to define the trim and buff gas in each processing range. The relationship between the flow rates. Alternatively, the interpolation and extrapolation methods of the experimental data in Figure 18 can be used to define a relationship between the amount of trimming and the flow rate of the blunt gas. One or more multiple curves The combination may include a polyf〇minal fit. For example, one of the first process recipes 91〇 is a sixth-order polynomial, and the second process recipe is - a second curve fitting system display A sixth-order polynomial. In addition, the number or order (多项rder) of the polynomial curve fit can be changed to optimize the accuracy and r强bustness of each process recipe. For example, can, polynomial The number of fits to maximize the range of trimming (or argon flow rate) of a physically correct model. For example, use at high trim (ie, greater than 23 in Figure 18) In the second process recipe, the flow rate of argon is zero, which may lead to the occurrence of two roots; see Figure 19. In addition, for example, the curve fit of the formula may be the wrong direction. Figure 20 shows the trimming i sensitivity to changes in the flow rate of argon gas, for example, for a portion of the first process recipe 910 and the second process recipe 920 used for a trim amount less than about -10^, trimming the argon gas The change or error in flow rate is less sensitive. However, the second process recipe 920 exhibits a highly sensitive trimming amount to a change in the flow rate of argon when used for a trim amount in excess of about 10 nm (i.e., in A change of about 2 seem in the flow rate of gas can result in a change in the amount of trimming of about 1). Therefore, a small error in the control of the mass flow rate can be shown as a large error in the amount of trimming. Therefore, a separate mass flow controller is used for each process recipe, so that the resolution of the mass flow rate of each processing range is maximized. Moreover, as shown in the figure, when the trimming amount exceeds about 23.5 At nm, the curve fits up in the wrong direction. 29 1259527 By making the _ 18 material, Figure 21 is shown as the first-curve fit of the second multiple-process recipe 910, and the display is - A second curve fit of the five multi-process recipe 920. Referring to the second process recipe, the amount of trimming of the argon gas in the curve fitting of Fig. 21 is no longer in the wrong direction. The change of the sheep, the long-term phase 23 Α, the argon rate _ rate of the difference (Qing, data disk ^ curve fitting difference) is the function of age is a function of health (nm). Fig. ^ ^ The error of the health of the error corresponding to the flow rate of argon is shown to be fitted with the respective curves in Fig. 23A to convert the flow rate error into /敫 = ^. The error in the amount of trimming associated with the first formulation is less than about 〇. The error of the trimming amount associated with the 2nm coating process is less than about 〇. 5 nm. "Brother 1 now refers to ® 24' to take Figure 22: the amount of trimming of the function of the money of the miscellaneous ship (seem). Figure 24 shows the display species: Erxi = reverse: process recipe The first curve is fitted to the second curve of the inverse second process recipe of the polynomial. Figure 25 tS is less than about 〇1, and the second process recipe is 1> The difference is less than about 〇·4 nm. Therefore, according to another embodiment of the present invention, at least one process recipe containing the fit can be optimized to make the trimming amount π. When using a polynomial curve In the meantime, the optimization may include the optimization of the number of polynomials. The skills and advantages of the present invention are all the same. Although only some embodiments of the present invention are described in detail above, those skilled in the art will readily understand that there is no In the course of the novel teachings of the present invention, the majority of the modifications may be within the scope of the present embodiment. Therefore, the modifications are intended to be included in the scope of the present invention. [Simplified Schematic] ~ In the drawings : 30 1259527 Treatment of a heat supply - Chemistry FIG. 4 shows a schematic view of a chemical processing system according to another embodiment of the present invention. FIG. 1 shows a schematic cross section of a heat treatment system according to an embodiment of the present invention. 6 shows a heat treatment system according to another embodiment of the present invention. FIG. 7 shows a schematic sectional view of a substrate support portion according to an embodiment of the present invention. FIG. 8 shows a gas distribution system according to an embodiment of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 9B showing a gas distribution system according to another embodiment of the present invention shows an unfolded view of a lying system according to an embodiment of the present invention; FIG. 9 is a perspective view showing a body distribution system according to an embodiment of the present invention; FIG. 5 shows a substrate lifting rod assembly according to an embodiment of the present invention; Side view of an insulating component according to one embodiment of the present invention. FIG. 14 is a cross-sectional side view of a heat insulating component according to an embodiment of the present invention. FIG sided FIG fluid distribution 311,259,527

And _j 3 shows a flow chart for processing a substrate; an exemplary material for a chemical oxide removal process; (4) a process for removing the process-control model; and an exploded view of the relationship between the structures described in FIG. The sensitivity of the relationship between the traces in Figure 20 i tm8; the sensitivity of the change in the phantom capture rate; Figure 23A The sensitivity of the fish you & η _ system; Figure 24 shows that the relationship between the squama and oxygen is best Method of merging; another control model for multiple divisions; f 25 shows a method for optimizing the relationship between the processing of the main component symbols in Fig. 21

1〇1 to 1st processing system 20 to 2nd processing system 3〇~transfer system 40~multi-component manufacturing system 50~insulation component/insulation component 100~processing system 110~first processing system 120~second processing system 130~ Transfer system 15 0~insulation unit/insulation unit 200~processing system 210~chemical processing system 210'~chemical processing system 211~chemical processing chamber 1259527 212~sealing cover 213~handle 214~ buckle 215~ optical inspection window 216~ Pressure sensing device 217 ~ drum button 218 ~ controller 220 ~ heat treatment system 220 ' ~ heat treatment system 221 ~ heat treatment chamber 222 ~ sealing cover 223 ~ handle 224 ~ hinge 225 ~ optical inspection window 226 ~ pressure sensing device 227 ~ substrate " (Measurement system 230 ~ insulation component 231 ~ interface plate 232 ~ insulation plate 233 ~ structure contact element 234 ~ engagement surface 235 ~ alignment device 235' ~ alignment receiver 236 ~ fastening device 236' ~ receiving device 237~Flange 238~0 ring seal portion 239~gate valve adapter plate 240~substrate support portion 1259527 242~substrate 242'~substrate 242''~substrate 244~substrate support Component 250 to vacuum pumping system 252 to vacuum pump 254 to gate valve 260 to gas distribution system 262 to process space 266 to wall heating element 267 to gas distribution heating element 268 to wall temperature control unit 269 to gas distribution system temperature control unit 270~ Substrate support portion 272 to fixed base 274 to thermal barrier 275 to controller 276 to heating element 278 to substrate support portion temperature control unit 280 to vacuum pumping system 281 to hot wall surface temperature control unit 283 to hot wall surface heating element 284 to upper portion Component 285 to upper component heating element 286 to upper component temperature control unit 290 to lifting lever assembly 294 to common opening portion 296 to gate valve assembly 297 to gate valve 34 1259527 298 to opening portion 300 to substrate supporting portion 310 to bonding member 312 to insulating member 314~temperature control element, 320~ coolant passage 322~ coolant inlet 324~ coolant outlet 328~ electrostatic clamp (ESC) 330~ ceramic layer 332~ clamping electrode 334~ high voltage (HV) DC voltage source 336 〜 Electrical connection portion 340 〜 back gas supply portion 342 〜 gas supply line 344 〜 temperature sensing device 350 ~ thermal insulation Gap 360~lift pin assembly, 362~lift pin ^400~gas distribution system* view~gas distribution assembly 404~gas distribution plate 406~gas distribution plenum 408~gas distribution hole 410~gas supply line 410'~gas supply line 420~gas distribution system 422~gas distribution component 424~element 35 1259527 426~element 428~element 430~first gas distribution plate 432~second gas distribution plate 440~first gas distribution plenum 442~second gas distribution charge Cavity 444 ~ hole 446 ~ channel 448 ~ hole 450 ~ first gas supply channel 452 ~ second gas supply channel 500 ~ blade 510 ~ tab 520 ~ flange 530 ~ drive system 540 ~ accept hole 600 ~ processing system 610 ~ A processing system 620 to a second processing system 630 to a transmission system 650 to an insulating component/insulation component 800 to a flowchart 810-860 to a step 900 to a control model 910 to a first process recipe 920 to a second process recipe 36

Claims (1)

I259527 X. Patent application scope: 1. The processing method for processing the substrate, which is used to adjust the amount of the 'component' in the middle of the substrate. The oxide shifts two:: upper. The 'process recipe setting step includes: setting the second garment to set the number of the second process gas; the sister (four) number i 'and the blunt gas quantity setting step, the domain chemical hiding side In order to achieve the step of the chemical processing feature by setting the amount of blunt gas, the feature on the substrate is processed by using the ;b; and the substrate is trimmed The amount is substantially removed and the trim amount is substantially removed from the feature. The temperature of the plate is used to heat the substrate. To < (4) The steps to set the number of the gambling gambling in the South include the number of settings. The blunt 5 gas number is as follows. The processing method of the substrate is used to process the substrate, wherein the number of steps includes: setting the amount of argon gas. The Lijiang method for processing a substrate, wherein the feature #subject comprises: introducing the 1259527 first process gas independently of the second process gas. 7. The substrate is processed according to the first item of the patent application. Adding the process recipe setting step further includes: setting _ ink force. Going, wherein 'the 8. The processing recipe setting step of applying the patent detail item further includes: setting a temperature of the substrate. π决9. As claimed in the scope of claim 1, the processing unit for processing the substrate, the process recipe setting step further comprises: setting a period for chemical processing to read the base ^ as in the patent application scope i The process recipe setting step for processing the substrate further comprises: a method of chemically treating the substrate. The sub-treatment garment is known as the temperature treatment of the substrate for processing the addition of U. The chemical treatment characteristic step comprises: a chemical treatment-oxidation method, which is formed by removing the chemical oxide shift from the process. , · Ma Diyi knows the quantity of gas and the number of second process gas selection steps, selects the target number of targets to trim the pure gas, selects the step to achieve the target number by using the relationship to chemically process the feature ^正, process gas, the amount of ^ ^ by exposing the substrate to the first amount of the chemical processing on-board (four), and the target number of the 5 Hai feature on the blunt gas; and 1259527 The target target trimming amount substantial removal step substantially removes the target-processing method for processing the substrate from the feature portion, and cleans the substrate in a vertical manner. In the relationship between the amount of the aqueous solution after the treatment, the relationship between the amount of the aqueous solution is = 3 ΐ ί 范围 第 第 第 用来 用来 用来 用来 用来 用来 用来 用来 用来 用来 用来 用来 用来 用来 用来 用来 用来 用来 用来 用来 用来 用来The relationship of the system 'contains _HF-number and NHH-body to establish a processing method for processing the substrate in the special item of the 12th item of the special ,ίίΐί range, and the relationship of the characteristic-trimming' The method for processing a substrate according to Item 12 of the patent scope, and the step of the -iiij breaking portion comprises: introducing the substrate independently of the second process gas: (2) the method for processing the substrate, The processing method of the 1st 9 series ^SSSin4:1, which is 39 1259527 20. If the relationship is further in the item a of the patent application, the processing method is the processing method of the chemical processing; 21. ^In the case of patents _12, the chemistry department _ _ contains: chemical treatment === method, which is used in the scope of the patent scope of the 12th _ board plus the following steps, More, the steps of the relationship are made so that the trimming amount is adjusted. The error is calculated by using the relationship between the two-line system and the subtraction into the trimming amount. The error is determined by the factory and the _23. The relationship determining step includes the method of the force of the Jiang 兮 敫曰 敫曰 敫曰 , , , , , , , Γ 修 修 修 修 修 修 修 修 修 修 曲线 曲线 曲线 曲线 曲线 曲线 曲线 曲线 曲线 曲线 曲线 曲线 曲线 曲线 曲线 曲线 曲线 曲线 曲线 曲线 曲线 曲线24. The curve fitting step of claim 23, wherein the curve fitting step comprises: fitting with a polynomial. The board adding method further comprises: a processing method for processing a substrate according to item 24 of the patent scope, wherein the error of the trimming amount is minimized, wherein the trimming of the door is performed by using the system The difference between the quantity data and the relationship is determined by the error of the variation. The processing method for processing a substrate according to item 25 of the Zhongli scope, wherein the step of extracting the bismuth telluride relationship comprises: adjusting the number of times of the polynomial. 1259527 The method for processing a substrate according to item 23 of the middle section, wherein the method comprises: fitting the trimming amount data to two or more processing ranges within the quantity of the pure gas . Flow control $卩 step contains · for each processing turn - separate quality The oxide removal process setting - the process recipe, wherein the process includes: setting the quantity of one of the settings, and setting the quantity of NH3; adjusting the process recipe for the oxide removal process to set the ammonia solution a number of 1 to achieve the trimming amount; a lesser 4 formula * method of deducting the substrate to chemically process the substrate on the top surface feature and wherein the amount of the HF is introduced independently of the number of the leg, and the number The argon gas is introduced with the amount of the crucible 3; and the trim amount is substantially removed from the feature, wherein increasing the amount of the argon gas system corresponds to reducing the trim amount. The seed processing system for processing a substrate for achieving a trimming amount on a substrate in a chemical oxide removal process, the system comprising: a chemical processing system for modifying a plurality of exposed surface layers by exposing the substrate to a quantity of the first gas, the second amount of the process gas, and the amount of blunt gas a heat treatment system for heat treating the chemically altered surface layer on the substrate; and a controller coupled to the chemical processing system for adjusting the amount of the insufficiency of the 41 1259527 to achieve the trim amount First, the schema: