TW200532795A - Method for operating a system for chemical oxide removal - Google Patents

Abstract

A processing system and method for chemical oxide removal (COR) is presented, wherein the processing system comprises a first treatment chamber and a second treatment chamber, wherein the first and second treatment chambers are coupled to one another. The first treatment chamber comprises a chemical treatment chamber that provides a temperature controlled chamber, and an independently temperature controlled substrate holder for supporting a substrate for chemical treatment. The substrate is exposed to a gaseous chemistry, such as HF/NH3, under controlled conditions including surface temperature and gas pressure. The second treatment chamber comprises a heat treatment chamber that provides a temperature controlled chamber, thermally insulated from the chemical treatment chamber. The heat treatment chamber provides a substrate holder for controlling the temperature of the substrate to thermally process the chemically treated surfaces on the substrate.

Description

200532795 IX. Description of the invention: [Cross-reference materials of related applications] This application is related to the US patent application 60 / 454,597, which is also in the process of patent examination. For Treating a Substrate) " 'Agent Case No. 071469 / G3G1G73', please refer to the recommendation date 3, 7 7 7 Wu Guo Patent Application No. 60 / 454,642, which is in the process of exclusive trial, 'The name is, chemical Processing system and method for processing substrates (Processing SyStem and Meth〇d F〇r ❿ 响 卿 丁 ⑽㈣ a Substrate) ',' Agent Case No. 071469 / 〇3〇〇〇087, the application is dated 2003 Month, π, and Day; US Patent Application No. 60 / 454,64i, also in the process of patent examination, and its name is Process System and Method of Heat Treatment Substrate (Prcessing System and Chest Vice)

For Thermally Treating a Substrate), Agent Case No. 071469/0301088, filed March 17, 2003; and US Patent Application Serial No. 60 / 454,644, which is also in the process of patent examination, and is entitled "Near the Temperature Control Room" Method and Apparatus For Thermally Insulating Adjacent Temperature Controlled Chambers ", the agent is Dr. Lin Linkui 07 Li 0292055, and the application is March 17, 2003. The entire content of all the cases is here It is included in the reference materials. [Technical field to which the invention belongs] The present invention relates to a system and method for processing a substrate, and more particularly to a system and method for chemical and heat treatment of a substrate. 2. [Previous Technology] During semiconductor processing, A (dry) plasma etching process can be used to remove or etch materials along thin lines or within vias or contacts patterned on a silicon substrate. Plasma etching processes generally involve A semiconductor substrate having an overlying patterned protective layer (such as a photoresist layer) is disposed in a processing chamber. Once The substrate is placed in the container, and a pre-specified flow rate can be used to introduce a separable 200532795 body mixture into the container. At the same time, the vacuum pump is throttled to achieve penetration. Electrons that are heated by induction or capacitance, or electrons that are heated by the use of microwave power from electronic vibration (ECR), and ions. In addition, 'heated electrons are used to decompose a variety of environmental gas species and establish suitable etching chemistry for exposed surfaces. Types of reactants. One or two can select the surface of the substrate by plasma. This process is achieved by ^ 1 to achieve the appropriate strips containing the appropriate concentrations of the desired reactants and ion groups to etch in the selected area of the substrate Various features (such as trenches, samarium contacts, gates, etc.) This substrate material on the demand side includes silicon dioxide (SiO2), low-k dielectric materials, polycrystalline silicon, and silicon nitride. During material processing Etching such a feature generally includes forming a pattern in a photomask, and inner = a pattern is transmitted to a lower layer film with various features formed inside. This photomask may include, for example, ( Or positive) one of photoresist, a photosensitive material, multiple layers including layers such as photoresist and anti-reflective coating (application :), or one of the first layer of scale (e.g. photoresist), the pattern is transferred to the lower rigid photomask A rigid photomask formed by layers. [Abstract] The present invention relates to a system and method for processing a substrate, and a system and method for chemically and thermally processing a substrate.-In one embodiment of the present invention, A processing system is used to perform material removal on a substrate including a first processing system and a second processing system, wherein one and the second processing system are connected to each other. The first processing system includes a chemical processing system, wherein the chemical processing system includes a chemical processing chamber, a substrate support, a vacuum pumping system connected to the chemical processing chamber, and a chemical processing system for conducting a processing gas. One of the chambers is a gas distribution system. The second processing system includes a heat treatment system, wherein the heat treatment system includes a temperature-controlled heat treatment chamber, a substrate supporting portion installed in the heat treatment chamber, and a vacuum extraction system connected to the heat treatment chamber. The selection element for any one chamber may be temperature controlled. 200532795 In addition, it also describes an operation method of a processing system for processing a substrate. This method includes: transferring the substrate to the human-chemical department; performing setting, monitoring, and adjustment: at least one of one or more chemical guard parameters of the processing system, one of which includes chemical processing parameters Processing pressure, a chemical processing capacity room temperature i: if 温度 gas distribution system temperature, a chemical processing substrate temperature,-: temperature of the sub-processing substrate support, and-at least one of the chemical department's Wei Cheng moving rate 'use- Add one or more chemical revolutions to enhance the beauty of the chemical department n. Introduce the base into the heat treatment system; perform at least one of setting, monitoring, and adjusting mathematical processing parameters, including one or more thermal treatments: ίί: At least the processing pressure, the temperature of the processing room, and the heat treatment rate: two: one support = degrees, and-the substrate or multi-heated guard parameters in the heat treatment gas flow rate system to read the processing system IV. [Implementation] (Such as photoresist) coating ν substrate science: a 'top image, transfer to the underlying material. Photosensitive material (when in the state of positive photoresistance = except for the outside, delete the feature part of the material with a dagger. By using it before the step-separately, the figure is not according to one embodiment of the invention. An example of a processing system 200532795. In the illustrated embodiment, the processing system lake includes a manufacturing equipment system (MES) 110, a tool layer (TL) controller m, which is connected to the MES. 110 processing tool 130 'and a batch (WTo), controller 190, its TT UTL controller 120 and processing tool ⑽. In addition, at least one of the MES 110, the input module J12, the processing tool 130, and the R2R controller 19 can include a database component (not shown). In other embodiments, GUI components and / or database components are not required. f: 疋 ^ or configuration information can be obtained by * TL control 11 120 and / or jump control system. Factory-level business rules can be used to establish independence: transport two people ::: In terms of 'TL controller 120 and / or jump controller 190 can control 11G control to some extent. In addition, you can use the process to suspend and / or suspend the production process, and when the suspension and / or system replenishment rules are used to determine the project, the project, the service, the initial model, Pre-etching amount it ;: ^^, W / B) Business rules can be defined in a control strategy layer and a protection layer. Whenever encounters-special sentiment _ontext === layer or f ^ related business_. Axis execution can be compared with higher-level chapters. Rules can be implemented; and maintenance of business rules can provide building case management and help screens. Only the relevant database is empty 120 and 'or coffee controller 190 business rules to determine what' 'TL controller 120 and / or coffee control is considered to be negligible = material] 200532795 The data collection process can be controlled by the factory system 110 to a certain In addition, industrial and business rules can be used to determine how to manage data when the process is changed, suspended and / or suspended. In addition, MES 110 can provide operating time configuration information to the TL controller 12 or R2R control 190. For example, the settings, goals, limits, and rules can be downloaded from the factory to the TL controller 12 and / or the ruler controller 19 to lead the process control (APC) recipe, A, "Apc system rules", and APC recipe parameters at operating time ". Certain settings and / or configuration information can be controlled by the TL controller 120 and / or R2R controller 190 before they are used by this system. The configuration rules (system rules) are used to establish a control level. For example, the R2R controller 19 can operate independently, or the TL controller 120 can be controlled by the controller 1% to a certain training level. Also, system rules can be used to decide when to suspend ^ And / or suspending a process, and what to do when suspending and / or suspending a process. In this way, system rules can be used to decide when to change a process and how to change the process, and then '-TL controller 120 The security layer rules can be used to control certain tool layers to change. Generally, the rules allow the system and / or tools to operate based on the dynamic state of the system. In Figure 1, an R2R controller 190 and a processing tool are shown. 13〇 and such a TL machine tool, but this is not required for the present invention. In addition to independent process tools and modules, the semiconductor processing system can include many processing subsystems, and the f system has many Related magic ruler controllers. In addition to the independent pelleting tools and modules at midnight, you can use the TL controller Do to place many Jiawei jade, and Jiayu jade has many and ^ J; TL 120. 4ίΙ ,; 祜 processing and processing tools, security systems, shop groups and TL control, 120 may include some applications' which includes at least one application, to the application related to the 松 -pine group, at least one sensor Related Application, at least one 2005327952: phase "with at least one database-related application, at least one application, and the application at least. 'Thunder controller m and E controller 190 can support -APC system from τ_ο Electric Co., Ltd., which can include-single-(Unity) tools, Tei ^ =-Trias tools and their associated processing subsystems and The process mold, and TL controller 120 can support other process tools and other shop groups. The binocular element can provide a simple user interface, which allows the user to make the following dynamics and the state of the shop group; create and edit the summary xy chart and start (tracking) parameter data; view the tool alarm record; match疋 ^ 疋 It is used to collect the information of the status of the writer from the writer to the database or the output I I 22 people to the statistical system control Na Pc) drawing, model test and trial calculation process Information 'and review are currently being saved to the asset mapping board ^, create and edit SPC charts of process parameters, and set to generate electronic field SPC alarms; perform multi-variable principal component analysis (PCA) and / or parts Remuneration reports and reports that the original data and tracking data from the tool can be stored as integrated measurement (IM) data and main measurement data in the database 122 can be stored in the database i.c. Xia Xia's position in the collection of data collection and execution processes and operations, plus the shellfish obtained from processing tools, processing chambers, sensors and operating systems can be stored in the database. In the embodiment illustrated in FIG. 1, a single client η is shown, but this is not required by the present invention. This system can support a plurality of customers. The “client workstation 112” allows a user to implement tools, controllers, processes, and processes in a state of imagination I; jU history data; performing model tests and Mapping functions; and / or control 11. For example, a user may be provided with management rights to allow other controls to control the process performed by an R2R controller. ㈣Control H 19〇 To connect to at least one other R2R controller related to a process that has been performed before one of the 2005 2005 795 processes, and to connect to at least one other related to one process that has been performed after this process Controller link 194. Link 192 and link 194 can be used for feedforward and / or feedback information0

The R2R controller 190 is connected to the MES 110 and may be part of an electronic diagnostic system. The R2R controller 190 can exchange information with a factory system. In addition, the MES 110 may transmit commands and / or do not accept information to the R2R controller 190. For example, the MES 110 can feed forward the downloadable recipes for many process modules, tools and measuring devices to the magic scale controller with variable parameters for each recipe. Variable parameters Yes, including final critical dimension (CD) targets, limits, compensations, and variables in the tool layer system that must be adjusted according to batch. In addition, factory lithography CD measurement data can be fed forward to the R2R controller 190. Furthermore, the MES 110 can be used to provide, for example, a CD scanning electron microscope (fEM) data to the controller. Alternatively, sEjyj information can be provided manually. The adjustment factor is used to compensate for any compensation between IM and CD SEM measurements. The manual and automated input of CD SEM data includes, for example, a date and time stamp for proper insertion into the history of the _ (FB) control loop of the R2R control H towel.

The configurable items can be configured as a set of indispensables sent from the factory system by using the common equipment model / SEM] equipment communication protocol (fEM SECS) protocol. For example, the variable parameter can be regarded as an "Apc formula," one of them. The distribution village contains a sub-property, and each sub-property can include a complex number ^ = controller, 19 series connected to the processing tool 13〇 and τ information can include _ and feedforward data. For example, # —internal reset ^^ ^ When the ▲ is generated, the 'R2R controller 19〇 can send a message (for example, an alarm = με < 110 ° Allows the factory system to make the necessary changes ^ Far = the number of elephants in a dangerous state _, 2 ^ changes that occur during positive or preventive maintenance. 2 in Continued 12 200532795 In the embodiment shown, the display shows a Processing tool 130, which includes a first integrated measurement module (IMM) 132, a processing sub-system 15 and a first: IMM m, but this is not required for the present invention. * Everyone can use other configurations Configuration. Single-R2R control stomach 190 is also shown in Figure i, but this is not what the present invention requires 2. Or 'an additional ruler controller can be used. For example, the magic ruler control f 190 can include- Feedforward ㈣ controller, process model controller, feedback (FB) control state, and process controller (all (Shown in Figure 丨) at least one. In the embodiment shown, a start event 102 provides an input to a first-= 32. For example, a start event can be from a host including a第 第 —IMM132 series is connected to one-leg control Ξ 二 2nd time, system 15G. Processing sub-system 150 series is connected to leg control σ /, one lm134 ° second lm134 series is connected to R2R controller iyu ° "processing times The 15G may include a first buffer group 152, a chemical oxide module 154, a post-heat treatment (me) chamber 156, and a first sub-module: = and =, the module performs the first step of the COR process. The first step A reverse reaction between a mixture of one of the treatment gas of α and ammonia gas and silicon dioxide. A solid reaction product is formed on the round surface. When it is located in the CO mode, the module executes C. The second step of the 〇R process = the evaporation of solid reaction products caused by square edges. The heating of the straw field 0 times system 15G can include-process transport (p ss shiP), which can include-using two PHT Module and a buffer) module. The processing system can catch the processing formula of Liaolanglang by making the amount of PTH, === round system ^ The processing system can use the -C0R formula to start this processing, and a Corr with 13 200532795 square y Begins when a substrate is transferred to the COR module. For example, the substrate may be received by liftpins stored in a substrate supporting portion, and the substrate may be lowered to the base and supporting portion. Then, the substrate may be fixed to the substrate supporting portion S1 by using, for example, an electrostatic clamping system, and a heat transfer gas may be supplied to the back surface of the substrate. Next, the COR formula can be used to set one or more chemical processing parameters for chemical processing of the substrate, and these parameters can include a chemical processing pressure, a chemical processing wall temperature, a chemical processing substrate support temperature, a chemical At least one of the temperature of a processing substrate, the temperature of a chemical processing gas distribution system, and the temperature of a chemical processing process chemistry (in a word, gas and fluid). The substrate can then be chemically processed for a second period of time. For example, the first period of time may range from 30 to 36 seconds. Then, the substrate can be transferred to the PHT module along with the chemical processing chamber. During this time, the substrate clamp is removed, and the heat transfer gas flow can be stopped to the back of the substrate. The substrate can be vertically raised from the substrate supporting portion to the transfer plane by using a lifting pin assembly stored in the substrate supporting portion. The conveying system can receive the substrate from the lifting pin, and the substrate can be arranged in the PHT module. Among them, the substrate lifting rod assembly can receive the substrate from the conveying system, and can lower the substrate to the substrate supporting portion. Then, the PHT recipe can be used to set one or more thermal processing parameters for performing thermal processing on the substrate by the pht module, and the substrate can be thermally treated for a second period of time. For example, one or more thermal processing parameters may include a heat treatment wall temperature, a heat treatment upper component temperature, a heat treatment substrate temperature, a heat treatment substrate support temperature, a heat treatment substrate temperature, a heat treatment processing pressure, and a heat treatment processing chemistry. (Including processing gas and fluid). For example, the second period can range from 30 to 360 seconds. In an exemplary process, the processing subsystem 15 may be a chemical oxide removal (COR) system for trimming an oxide hard mask. In another exemplary process, a COR process can be used to trim an oxidized tunable anti-reflective coating (TERA) film. The processing sub-system 15 includes a COR module 154 for chemically processing an exposed surface layer such as an oxide surface layer on a substrate, thereby exposing the surface of the surface to the chemical change of the surface layer by the adsorption of the process chemistry of 200532795. In addition, the processing sub-system 150 includes a -J > HT mold and a group 156 for heat-treating the substrate, thereby raising the temperature of the substrate so as to release (or vapor-deposit) a chemically changed exposed surface layer on the substrate. For example, the COR module can use one of the packages to process the gas, and the processing pressure can range from about 丨 to about 100 mTorr, for example, from about 2 to about 25 mTorr. The process gas flow rate for each category can range from about 1 to about 200 seem and, for example, from about 10 to about 100 sccm. In addition, a uniform (three-dimensional) pressure field can be achieved. In addition, the COR module compartment can be heated to a temperature ranging from 30 ° C to ^ 00 ° C. For example, the temperature can be approximately 4 (rc. In addition, the gas distribution system can be heated to a range from approximately 4 (rc). The temperature may range from about 100 ° C to about 100 ° C. For example, the temperature may be about 50 ° C. The substrate may be maintained at a temperature ranging from about 10 ° C to about 50 ° C, such as The temperature of the substrate may be about another. In addition, in the PHT module, the heat treatment chamber may be heated to a temperature ranging from about 50C to about 100C, for example, the temperature may be about 80. 〇. In addition, the upper component can be heated to a temperature ranging from about 5 (rc to about 100), for example, the temperature can be about 80 ° C. The substrate can be heated to more than about 100 π / summer Alternatively, the substrate may be heated in a range from about 10.0 to about 20.0. For example, the temperature may be about 135 ° C. The COR and PHT processes described herein may produce the following Etching amount: Chemical treatment of thermal oxides exposes oxides more than about 10 nm every 60 seconds One of the surface layers, the amount of etching; the chemical treatment of the thermal oxide exceeds approximately 25 nm every 180 seconds ^ an etching amount of one of the oxide surface layers is exposed; and the chemical treatment of TE0s exceeds approximately every 18 seconds An etching amount of 10 nm of the exposed oxide surface layer. These processes can also produce an instant change across a substrate that is less than about 2.5%. • Start event 102 can be one of the wafers in the event, and the start event can be Contains data related to in_coming wafers. This data can include batch data, batch / quantity data, operational data (nmdata), composition data, and wafer history data. Alternatively, the start event can be a different and Process-related events. The first IMM 132 can provide a pre-processing 15 200532795 to measure the shell material used to establish an input state of a wafer. The -IMM 132 can provide (feedforward) and read one of the measurement data. One part is for the R2R controller, touch, and can provide one of the pre-processing measurement data. The second part is for the processing system, 150. Or, the _ part may contain the same data. The -imm 132 may include f-IMM or multiple weights. Section.—IMM132 Contains module-related measurement devices, tool-related measurement devices, and external measurement devices. For example, s'f materials can be connected to one or more process modules and connected to processing tools In addition, the data can be obtained from an external device such as an SEM tool and an optical digital contour detection (ODP) tool. The 10 Dp tool can be obtained from —The patented technology of the contour of the characteristic part was obtained by Timbre Technology Company (TEL Company). ≫ The R2R control system can be used to measure the input shirt material (input status> one of the measurement, measurement, size and a target critical size (desired State) to predict, select, or calculate a set of process parameters to achieve the desired result of changing the state of the wafer from the state of input to the state of hope. For example, the process parameters of this test group may be a first estimate of a recipe used based on an input state and a desired state. In an embodiment, information such as input status and / or desired status data may be obtained from a host. &Amp; Under one condition, the R2R controller 19 knew the input state and expectations of the wafer, and the R2R controller 19 decided to execute a set of recipes on the wafer to transfer the wafer from the input state Change to the desired state. For example, this set of recipes can illustrate a multi-step process that includes one of a set of process modules. The R2R controller 190 can use tabular technology to determine when to make technical conversions. The rules are based on-input range, one output range, one wafer type, one process type,-module type,-tool type, one crystal. The f-term of the round state and a process state is based. For example, the recipe may be in a table, and the leg controller 190 performs a table query to decide which recipe to use. ^ When the R2R controller uses tabular format technology, the feedforward control variable can be configurable ^ = For example, a variable can be a constant or coefficient in the table. In addition, there may be multiple tables, and a rule that determines when to convert tables can be based on an input range or an output range. 16 200532795 Time constant of R2R controller ♦ Density The time between when it is available after completion-batch. Equivalent measurement time. When the measurement data can be based on the time constant of the batcher, it can be based on the wafer ', take the slope, and the inspection control is provided immediately, the time & number of the R2R controller is the processing step during processing. When the measurement data is obtained within one wafer ^^ 3 within one wafer or after completing this batch, the number 1 can be based on the second step of the process step =-个 二 === 可:, What time to operate. For example, the controller can be used as soil; Single, = out_〇) device, a multiple input single output early: and-multiple input multiple output (MIM0) split. In addition ^ Lose within a salt controller and / or between one or more ba controllers 2 = $ 1 When using multiple inputs such as CD and side wall angles, two modes can be used, while Lu 'and backward Feed people and output, (ie, one for CD control and ° wall angle control). Alternatively, you can also use-mask to open and control relay. The package processing sub-system 150 may include at least one of the following: an etching module, an integrated module, a polishing module, a coating module, a developing module, and a heat treatment ^ group 0, when a processing tool And / or the process module sends data to the database, the material can be accessed by the R2R controller. For example, this data may include the data of workday 17 200532795 and the EPD data of maintenance and repair. Tracing can be mentioned in Canada, or in completion—the addition of wafers. The controller 19G can be based on the input status and process characteristics.

= Wafer-Predicted status. For example, the -trim rate 'model J is used to calculate a predicted trim amount. Alternatively, = ”is used to calculate the side depth from the calculation time, and ^ rate can be used with a processing time to calculate the thickness of the deposition. Also: ίΐΐ diagram, PLS model, PCA model, appropriate distance phase and more Variable analysis (MVA) model. Shu, 曙 C) board type is controlled by fR, which can receive and provide information about the process module 2 number limit. For example, 'Prison controller Gu 1 In addition, the layer controller can The model (PLS, PCA, etc.) constructed and sent to the controller. The second IMM 134 can provide measurement data after processing, which can be used to output the state of one crystal. The second IMM 134 can provide ( Feedback) The first post-processing measurement data is allocated to the R2R controller 19, and a portion of the post-processing measurement data can be provided to the poor warehouse and waferout event 104. Or, two ^ Includes the same data. The second IMM 134 can include a single-IMM or multiple. Set. The second IMM 134 can include a measurement device related to the process module, a fish tool two-level measurement device, and an external measurement. Test device. For example, data can be Sensors of multiple process modules and sensors connected to processing tools. In addition, data can be obtained from an external device such as a SEM tool, a light emission spectrum, and an 0DP tool. / R2R control The processor 19 can use the processed measurement data from the second IMMM 134 to calculate the process deviation of a first group. The process deviation of such a calculation group can be based on the addition of 18 200532795 = θ, followed by 19G Known Control-190 Determine the difference between the expected state and the output state ^ difference 式 式 式 'Formula 1 The actual production of the healthy fruit system and the chick's process results are compared, and 4: Chief ^ process formula-correction. In another state T, 11211 controller 190 ίίί ^ ΐΙΪΪΐίίΓΪΐ Compare the predicted process results so that the mosquito-to-process model of the fruit system and the mesh sugar do not need to be used-look-up table method to adjust the target CD. For example, §, the target CD provided by a factory and One is filtered

A simple Wei increment between CD + can be applied as a correction: The model update is another form of feedback, which can change the process by bridging the mosquitoes and bribes, and then rely on the type ^^ 片 一 ^ Model updates can be produced by measuring-monitoring the front and back film characteristics of the wafer for each solid-processed leaflet. By changing these settings over time to check different operating areas, we can confirm over time that the space is completely dependent, and we will execute several f controller chips with different recipe settings. Model updates can be generated in a tool or factory controller, allowing factory control and management to monitor wafers and model updates.

Prison Control II 19G calculates and updates the formula for the next wafer. In one situation, the R2R_H can enable the age information, model test information, and feedback to determine whether to change the current formula before executing the current system. In another situation, the R2R controller 190 can use feedforward information, model test information, and feedback lean information to decide whether to change the current recipe while the next wafer is being executed. Or t R2R, ^ 19. Feedforward information, model test information, and feedback information can be used to decide whether to change the current recipe before executing the next batch. An R2R control unit 190 may include one or more filters | (not shown) to filter the measurement material in order to remove random noise. For example, a filter can be applied to the input or output of a controller. In one case, the filter can be applied to the input used to filter without having to care about the control method (that is, using a lookup table independently). This can also enable the control to change the output variable within the control range, for example, to change the flow scale in small steps, and then complete the change to make a flow rate change gradually.

An outlier fllter can be used to remove outliers that are statically incorrect and should not be considered in the calculation of the average value of a wafer 1 measurement. You can filter out groups to remove high and low outliers from the average. For example, the -box X and whisker) method can be applied to field measurement data. This method is effective, and it is easy to maintain without absolute limits, allowing a set of transition limits to be applied to the group's input CD average data (with the extreme limit of age limit, this goal can be changed. About an outlier The filter 'extra rule needs to be maintained (a small number of points in -0 is used to represent wafers statically, and wafers are used to represent a batch).-Noise filtering n can be used to remove randomness Noise and stable control loop, can be used-exponentially weighted moving average (EWM · Kalman filter. When using a ^ over number must be set (in the case of EWMA, λ is the day hanging number). For example, s 'EWMA calculation can be completed each time by using the complete history, in order to hunt for the data points that are out of order by processing date and time. R2R control can receive and feed forward data. For example, coffee can receive information about all Input materials to be processed and desired process results (Provided by objective g—the parameters of the listener to achieve the results of the Weiwei process. The R2IU system β can receive feedback data. For example, the controller can Information on the materials of the Guardian Side process model. R2R control can receive and watch later, make the data and miscellaneous # riding plus k reverse order touched, ^ receivable. Information that has been viewed by Lijiang is recorded in the model. The controller can receive And use manual input controller. For example, R2RM 丨 $ Γτττ-manual input and manual input-^. 70 pieces provide controller configuration information R2R control, can send and receive notification of exceptions .For example, prison 20 200532795 pass = to use the e-mail of the waste level controller or-tool level controller, or call ^ was sent ^ exception status via the electronic diagnostic network, cry can be The simulation mode is executed. For example, the action of the betting can be recorded in the secret. In this situation, the simulation action. T is in the leg & system & recorded and historical database, instead of taking an immediate cold action. Provides input parameters for gas flow rate, and provides input parameters for gas ΐίίί 举例. For example, the post controller can count 1 body ~ kinetic rate 'and adjust the total flow of the combined gas. ”Establish ancient, 3 = ίί Materials To choose a process model. And ί. Select the process mold with the system button. And two- "have already confirmed that this system can calculate a correct leg setting hand = 定 i 丰 # The controller can include confirmation of the recipe parameters before the start of the batch The second-run controller may include a hand that uses the preset settings of the recipe set points. The i. + ® r controller cannot provide-when the recipe parameters of a specific wafer, the recipe parameters in the recipe can be used. Contains a lean library element to reduce the input and output data. For example, the R2R controller can archive the input received, the output sent, and it can be taken by the controller in a searchable database. In addition, the hidden controller can include means of data backup and recovery. In addition, the searchable database can contain ^, poor information, configuration information, and historical information, and the control can use database components to back up and rewrite historical and current model information and model configuration information. The R2R controller may include a web-based user interface. For example, the H-controller may include information that causes the GUI component to start. The R2R controller may include a secure element that provides multiple levels of access based on permissions granted by the security administrator. The R2R controller can include a set of preset models set in Ang, so that the R2R controller can not be reset to the preset condition. Based on the nature of the exception, the R2R controller can take a variety of different actions in response to 21 200532795. For example, t •, the exception status> may include: missing the measured error, exceeding the recipe parameter limit, exceeding the process module parameter ^, and ΐϊίίΙΙ. For example, if the action taken in accordance with the exception can be it square, process recipe, module type, mold_type number, ft_P0rt) number, wafer box number, batch number, control job ID, process worker- The number of sound and detailed descriptions of the business rules established by the situation. This can be configured as pure to the lowest level with; ^ person. Matching a case with a higher view matches a case with a lower layer. If no match is found, the leg controller input can include instructions, substrate status, and module objects.

, And / or controller parameters. In addition, the prison controller can input the time constant of the previous J feedback private channel, the reset event accumulated by Chen, the IMMM step, and offset compensation by ODP). Instructions can include goals, tolerances, calculation orders, data collection plans, variants, models, coefficients, and / or recipes. The substrate status may include information (field, wafer, batch, batch status), profile, and / or physical, electrical measurement characteristics from the substrate being processed. The physical state of the module can include the current or last known recorded state of the module and components that will be used to process the substrate.

Day, wafer number, and 7 or consumable status. The process status may include the current or last known measurement status from the sensor of the processing ring, including tracking data and / or summary statistics. The controller parameters may include the final settings of the recipe / controller setpoints and the process targets of the structure substrate state, module physical state, and / or process state. The output of the R2R controller may include the following items: export parameters, settings, an event or A message, interpolation, derived context, log A message, and / or history. For example, data can be transmitted to an offline system for analysis. Derived parameters can include information generated by a controller that can represent the status of the controller, process, materials, and / or equipment. The settings may include the process tool parameters' calculated by the R2R controller and are typically downloaded to the tool during run time. For example, these parameters may include the time, pressure, temperature, gas flow rate, and / or power of the step. An event or message may contain information indicating that an exception has occurred in the system being controlled. Plug 22 200532795 Off:: 2 J Suggested (or adopted) by the post controller-use the material to touch the green-Ant domain can R2R controller can contain at least one of the at least one of the data to support at least one controller application Storage device. For example, under various conditions, the operating software can perform the following to ^ = management, fault management, solution _, and through-^ to form the interface between the computer and the I component ,, The screen of the material management GUI can be ingenious, (group, sensor, etc.), and how to determine where and where to store = ㈣, which is used as an example according to the present invention-the embodiment of the-processing system No.—Operating method data Force Γ before measurement data. The measurement data may include on-site measurement Λ For example, the 'on-site measurement data may include: the results of a moderate consultation and the current% of results, and / or the number of sites. Wafer Beco can include: CD test flags, number of measurement sites, formula round material 2: force? Scattered cd data on the elephant corpse and the J 'set feature, and can be compared by insulation CD data and nested CD data are refreshing: the first trimming can be performed based on the insulation CD data; and the second trimming process is based on embedding ^ ;; rr °-*-* ά * ^^ Determined by the difference between the CD poor material and the target CD data; a second variable 23 200532795 The difference between the CD data of the recruiting department and the target CD data is determined; 0 Wang Yicheng can be increased based on the first variable Between the amount and the second variable increment. t / 、 ”The measurement data before processing can be used for feedforward control. In addition, on-site measurement is summarized as the statistical value of the control wafer according to certain industry rules. The data of Gongli measurement can be filtered. For example, an outlier suppression can be used to remove outliers on L that are statically non-positive data points. Zhong Luzhi, those unreliable sites can be discarded and not used for wafer average calculation under various conditions. The average / σ comparison method can be used before processing i Shiping. For a σ multiplier, Specify χ; all data points can be summarized, thousand sentence values /, one σ, two limits can be calculated (mean +: χ ^^ σ and all ancestor points outside the f limit can be removed; check Can be recalculated and IM measured after it is taken. Or 'outliers can be obtained by using a box-and-whisker method = 215. One or more can be used to determine the desired state of a substrate. Output parameters. You can provide the target CD and the CD you want to control in other words. In other words, the identification of the system must be the same as that of the target CD. Because the system CD is made by The desired control system 3 ′ target ⑶ can also be defined by the desired control process room. Therefore, each ϋΐΓ &quot; is related to each control room 'and the target CD value related to each control room can be before the start of the batch Specified. $ Also, the source of the target CD can be identified in advance. For example, there can be ΪKnowledge-type goals ③, external read target CD and internal target CD, Yu said H 3 series, provided by the hall through the hole controller ⑶, and internal 'CD is provided by using input from a GUI . In mind, L can determine the desired process results. For example, the target CD can be = 刖 里 测 # material for comparison. # When the measured data before adding jade is smaller than the target CD, you can make a wrong cloth. When before processing When the measurement data is approximately equal to the target CD, 24 200532795 nfiNuiinm can be announced. When the power measurement is greater than the target cd, trimming can be built 1. If the relationship between the trimming amount and the formulation parameters is included, the private model ' Then-the trimming amount to be removed during the process can be regarded as expected to be formed in 225, which can determine the formula to be used. For example, a process model can be provided.-The process model shows the results (output) Confirmation relationship with the variables that must be achieved / received. The process model can include tabular ^ type 0, and the tabular model can include segmented links between expected results and formula variables based on experimental data based on certain evaluations. Form.One process Type may be linear or non-linear as shown in. FIG. 3 field, the present invention can be used to control the trimming etch specification control 〇1) and reach the target in the CD within the tolerance. For example, the controller (TL and R2R) can use a simple box algorithm (control recipe selection method) based on trimming the last name. First, a control formula containing information about the quantity to be trimmed must be evaluated and qualified in advance. Table 1 shows an example of the evaluation results. A nominal formula is a basic reference process formula with modified narrative (TA). This example shows four control recipes (control recipes i, 2, 3, 4) with respective associated trim etch amounts (TAL · TA2, TA3, TA4), but this is not required for the present invention. Different numbers of recipes and multi-dimensional recipes can be used (i.e. target CD and target depth). Table 1 Example control recipe look-up table Control recipe trimming amount Rated recipe (NR) Trimming amount (TA) Control recipe 1 (CR1) Trimming amount 1 (TA1) Control recipe 2 (CR2) Trimming amount 2 (TA2) Control recipe 3 (CR3 ) ^ Integer 3 (TA3) Control recipe 4 (CR4) Trim 4 (TA4) Based on the recipe look-up table (Table 1) example, the conceptual diagram of recipe selection is shown in Figure 4. Although only one side is shown in the chart, each box represents a bilateral dimension (double the size). Box boundaries (BB1-BB5) are also displayed. 25 200532795 — In one case, the user can configure control variable settings for each control recipe; link each control recipe with each trimming amount; and enter the upper bound of the trimming amount. The upper boundary can be used to establish a -upper limit that can be trimmed by prequalified controls. For example, when an upper boundary is exceeded, a == condition can be declared or a multi-step process can be performed. The lower boundary can be used to establish a trimming system—the lower limit—that can be achieved through prequalified control recipes. After the user confirms this configuration: the TL controller (ingenio) divides the & trimming space between the upper and lower borders into several box areas based on the trimming input (TAs). The lower and upper boundary system of each shop is determined by the median of two adjacent trimming amounts, and each connection of the control recipe and the trimming amount is allocated to a box. Alternatively, you can download control recipes and trim variable settings from the MES. ^ Each box has its own trim amount boundary. Once the desired CD has been determined, the Ingenio controller can decide which box contains the desired trim amount. For example, the futures CD may be a measurement CD, a calculation CD, and / or a designated CD. This means that "the closest trimming amount in the control formula is selected. The simple box algorithm for this example is shown in Figure 5. In this example, control recipe 3 is selected and the substrate is to be trimmed by using D3. Certain differences between the desired trimming amount of the control recipe and the selected trimming amount (that is, the trimming amount error) must be configured within the target CD tolerance. A control failure can occur, and a TL controller (ingenio) or a tool (Telius) can detect a control failure. The measurement data failure and recipe selection failure are the types of control failures that can be detected by the TL controller (Ingenio). The types of control of missing persons t that can be detected by tools are suspension of recipe reception, integration communication failure, and synchronization failure. When control failures occur (receiving recipes or failing to integrate communications), one of the following options can be used to control the TL controller (ingenio): use the tooling process to avoid them without processing; and stop the R2R control program. When control failure occurs, one of the following options can be used to control the action of the tool (Telius): batch ^ continue and batch interruption. The control meter can be regarded as a separate batch (mn_t0_mn) control unit. In this unit, the configuration settings include integrated control with a process tool, control process, control failure action and / 26 200532795. The independent control unit contains the control room and associated circles. ^ The determined formula is used to process the crystal. A trimming procedure can be performed by using a processing subsystem (processshiP) that can include a COR module, a completion, and at least one buffer module. Move the Γ wafer into a first buffer (load interlocking chamber (Load ··, and.) The first buffer (load interlocking chamber) module pumps air to reach the passive-to-second buffer (PHT) module; the wafer in the GUI status screen）). Then, the tool can move the wafer into a first tf t; TL controller (FDC component) can choose the material listed in a control strategy Collect (DC) strategy and set sensors; status screen can be updated; and, can be changed; the tool executes one of the first process modules, the recipe starts, and the status screen can be updated (module status Can become, wafer processing "). Then, the sensor can start recording, recipes go through the processing steps; the first process module can send one, and the recipe ends" event, it feels like the I device has stopped 5 already recorded The tool moves the wafer to a second buffer (ρητ), group. Then the 'TL controller (FDC element Software) can collect data files from the tool, and start processing data based on the data collection day filter; TL controller (FDC component) can choose one of the analysis strategies defined in the control strategy; processing module and processing status data; And update the database (that is, the module status and process status). Then, the status glory can be updated (the module status can display wafers in LL / PTT; one of the second buffer (PHT) modules' 'Recipe start'; status screen can be updated (module status can be changed &quot; wafer processing). Then, it can be sensed to start recording; recipe cycle through processing steps; second retarder (PHT) module can be transmitted A "end of recipe" event; the sensor can stop recording; the tool moves the wafer to the first buffer (loading interlock chamber) module; the vacuum state changes from vacuum to atmospheric pressure, and the tool moves the wafer away from the first buffer (Loading interlocking room) module; updated with status screen. ^ In 235, post-processing measurement data can be obtained. Post-processing measurement data can be obtained after a time delay ', and this time delay can be obtained from Minutes to days Etc. The measurement data after processing 27 200532795 can be used as a part of feedback control. In addition, the material can be summarized as the value of the wafer according to certain commercial rewards. Service / Institute = Pre-measurement data and a non-controller 4 Detecting poor materials. X, the measurement data can be filtered after adding ji. For example,-^ suppression filter, the device can be used to remove a wafer It is an outlier. In other words, those unreliable sites can be used in the average calculation of wafers. A + will use the last name u in two situations. An average / <7 comparison method can be used for measurement after processing "Information" can refer to a multiplier; all data points can be summarized into 2,000 sentences. One (7, two limits can be counted (average ten times and ^ and average Ϊ) All data except the limit Point; the average value can be recalculated and ^ identified = take 4 6UM measurement. Alternatively, outliers can be determined by using a box-and-whisker plot method. The post-processing measurement data is compared with the pre-processing measurement data. After that, the data can be expressed from a process or a process step. In addition, the amount of trimming measured during a process can be regarded as a system check and a query is performed to determine whether the process has been completed. For example, when the second has been reached. When this process has been completed, the procedure 200; and ends. When this process is not completed, the program 200 branches to step ZZZ °, the key point is, the machine is faced with the w !! Once you apply the example, you can use the control strategy. For example, the control strategy can be selected based on each combination of control strategies can be implemented. The control strategy is evaluated on a wafer-by-wafer basis. A control strategy may contain one or more controls. * Control system may include a control model. When multiple control models are executed at the same time, the round-robin of the two may be used as the input of the next model. There is at least one control meter for the parent process module being controlled. 28 200532795 Complementary Li Bao ί One or more control strategies. The control strategy includes waiting for control ==== quasi. A control strategy consists of one or more systems for each process module. At least one of them must be under control. For example, the control model can be expressed as ^ 朿. All configuration information can be stored in the database. Storm jiff is used to download system recipes from tools. The user can view this group of system recipes and select one or more to download from the tool ^^^ ϋ ϋϋ ϊϊϊ system recipe name, transmission path, and module recipe name: a disk-carry file can be stored in In the library. w, the leg controller-configuration f screen can contain-display control strategy, a tree view of off. Users can create, transfer, export, approve, remove, record, connect and unlink control strategies, and control book patterns. If you choose-Object and create-a new child type, the child ϋ 2 二 ίΐί is related. For example, 'If a control strategy is selected and a 4k centering is established, the control plan can be related to the control strategy. The tree diagram can show the system recipe name of the control strategy and the module configuration of the control plan. Gamma ^ In some cases, some coffee screens can be associated with a controller, each having a side function. For example, — a batch of untGRun) controller camps can allow users to switch to other screens; — the formula range screen allows users to view the number of health age predicates at an early stage, and some Weis are used as control machines And enter the control process of the lower and upper process; -㈣The formula wire can be used to view the selected process recipe variables of the tool to be controlled and enter the settings of each control variable of each recipe step; -Control plan screen It can make the integration of process tools, control ports, control loops, false information and control algorithm information. The configuration of control signals is easy, so that a user can input the trimming corrosion associated with each control recipe. Enter a simple box list; and a control status screen allows the user to view the status information related to the selected batch (run to run) control meter and control wafer. 29 200532795 An example of a run-to-run control configuration process can be as follows: l = recipe range screen and configure it based on preset values. 2 • Switch to the control recipe screen, and set it based on the recipe range configuration. 3 · Switch to the control meter screen. Set integration tags (tags), control tags, and algorithm tags. 4 • From the Control Meter Day_Alternative Method tab page, switch to the Packing Table window and set and configure this phase table based on the control recipe configuration. 5 · Switch to the control status screen and view the selected historical or operating inhibited day status and control wafer status. Quot &quot; An example recipe range screen is shown in Figure 6. This screen allows the user to view the tool process recipe variables in units, select control variables and enter the lower and upper process limits of the ^ process variable. The description of each variable is editable. The recipe range screen can contain configuration items. Table 2 shows an example view of some configuration items on the recipe range screen. Table 2 Display items of recipe range configuration Display items Description Name Name of the recipe range. The user can enter the recipe range name after selecting a new or copy button. After selecting the Edit button, the recipe range name cannot be changed. Null, Nominal, and Default are not allowed as recipe range names. Description A description of the recipe range. The formula pillow screen may include at least one check box, such as a protection check box. Table 3 shows an example view of some checkbox items on the recipe range screen. Table 3 Recipe Range Configuration Only Description Checkbox __ Description '-The Protection GUI only allows the user to enter and store limits that are more precise than the tool preset limits. For the control formula, there is only protection with Zuo Hanwei; ^^ 0 spoon. If you do n’t choose to protect, you can write 30. 200532795 Table 4 shows the recipe in Table 4 above. Item Control (Yes or process recipe variables. Design format LowerLimit (lower limit) tool process value. -—-___________ The upper limit of the recipe variable of the tool process. Enter the value by clicking in the cell. Description (Description). The default value is based on the recipe variable '.

Variable (unit) __Memo. _ In addition, the recipe range screen can include some selection items, such as button items. Table 5 shows an example view of some button items on the recipe range screen. Table 5 Button descriptions in the recipe range configuration area Button Description Reset Reset to default settings. Prepare the preset settings according to the process tool settings. OK Saves the recipe range to the DB and sets the screen to view mode. At this time 'the formula range cancer cannot be edited. If a duplicate recipe range name is found, a message box window opens. Save Saves the recipe range to the DB. Editable range information is editable

31 200532795. If a duplicate recipe range name is found, a message box window opens. °

Cancel (Delete) In the situation of Cha Yu's father, Guan Fang licks the vision of the field. Table 6 shows an example view of some extra button items on the screen of the formula target. Table 6 Button descriptions on the recipe range screen Button Description '-Close Closes the recipe range screen and returns to the R2R controller screen. If clicked during editing, a message box opens. New Creates a new recipe range associated with a process room. Click on this process room to connect. The recipe range name must be entered. Copy Click the recipe range name as the copy source. Click Copy to copy the selected recipe range. By default, the copied recipe range is not protected and the recipe range name is blank. Edit View the recipe range and click Edit to change the existing recipe range setting. Do not select protection before editing. Once protection is not selected, the configuration table can be edited. Delete Click on Delete to delete an existing recipe range. Delete all related control recipes before deleting the recipe range. If protection is selected, the delete button has no effect. A recipe range Navigator panel is displayed on the left side of the recipe range screen. The recipe range is related to each process module. By clicking the formula range name on the tree table and any of the lower operation buttons, a user can operate the formula range.

Example ^ As shown in Figure 6, by using a recipe range screen, a user can perform a recipe range configuration, view an existing recipe range, create a new recipe range, duplicate an existing recipe, edit an Existing recipe range, and delete an existing recipe range. In addition, an R2R controller screen such as a recipe range screen may include a button to view software and tool version information. 32 200532795 Fig. 7 shows that according to the present invention-the screen enables the user to configure items on the screen. Table; display control _ Fang Wei, and edit each control allocation for each recipe step Display item 1 Name

Description Cell Edit Counter Control, recipe configuration τψ mesh Description t system recipe name. When clicking the new or copy button, the user must enter a unique control recipe name. When you click the edit button, you cannot change the control recipe name. Retain the names such as empty ⑽⑴) and the name of Default (Default) for special Zhu Shen to control the recipe description. The GUI counts the number of setting inputs in the variable stage and displays this information. This is a read-only chart 8 showing some display table items on the screen of the control recipe. Examples of visual items block description Variable (unit) [variable (unit η internal control variable with unit. Read-only display information comes from the recipe range configuration Setting. Lower limit of the tool process recipe variable. The value must be rotated. Upper (upper limit) The upper limit of the tool process recipe variable. The value must be entered. Description The description of the control variable comes from the recipe range configuration setting. This is read-only. 33 200532795

Step 1-24 (Step 1-24) The user enters the process recipe. The cell items entered in step 1-24 are counted and displayed under the cell edit counter by the calculated number. If the control variable is time, the user can enter it as shown in the following format, minute 仏 Control Force Display Control Gear: ¾ Table 9 Guarantee 1 ------------- yy ·) Contains at least one check box, such as a protected check box. Table 9 Illustrative view of some check box items on the screen. Protect the checkboxes Checkbox Explanation -— The Protection GUI checks whether the input value of the parent variable is within each of the lower and upper limits. If they are within limits, save this setting. If not, the user is prompted to change these settings. Protected control recipe settings are used to control day counting. If protection is not selected and these settings are saved, all control day protections using the control recipe will be removed. The control recipe configuration can be stored only when protection is not selected. In addition, the control recipe screen can include some selection items, such as button items. Table ίο shows an illustrative view of some button items on the control recipe screen. Table 10 Control recipe buttons Button Description Clear Clears all step settings. Open a message box before clearing the settings. Ok (OK) Save the recipe range to the DB and set the screen to view mode. In this case, the recipe range configuration cannot be edited. If you find a duplicate box window. Save Saves the recipe range to the DB. The recipe range information can be edited. If a duplicate recipe range name is found, a message box window opens. 200532795 Condition 〇 A control recipe Navigator panel is displayed. On the left side, under the wealth _ each shed side, the control recipe name on the button is used to operate the control recipe. One uses = to select the tree-like table and any lower simple silk on the silk line to operate with 1 from 1 ¾ ° as shown in Figure 7, by using-control the recipe screen,-using repair, state, view an existing Control recipe, create a new control recipe, control recipe, edit an existing control recipe, and delete-FIG. 8 shows a view of a control strategy according to one embodiment of the present invention. The control strategy includes benchmarks to be matched with other conditions. ;: The control strategy also contains several pieces of information, including the information needed to select the control model to be implemented. -The control plan can enable individuals to download system recipes with control room standards or manually enter system recipe names via the transmission path. Also, selectively establish certain case matching benchmarks. °-Control strategy glory can contain-some configuration items. Table u shows an example view of some configuration items on the control screen. Table 11 Control strategy screen feature description ^ Name Control strategy name Description Control strategy description 1 Enabled Start control strategy __ ~ Protection Protection control ~~~ — System Recipe ) Click the it button to download the system recipe from Telius and display the dagger. The general recipe name can be a direct name. The name of the system recipe is used to match the name of the system recipe. 35 200532795

36 200532795 (Wafer Type) Scribed Wafer ID (s) (Substrate ID (s)) (Substrate ID) Wafer ID 识别 (Wafer Identification) Time) In addition, the control strategy glory can include some selection items, such as button items. Table 13 shows an example view of some button items on the control strategy screen. Table 13 Control Strategy Press — Button Description Stomach OK Save the control recipe to the database and set the screen to view mode 2. At this time, you cannot edit the control strategy configuration. If a kingfish strategy name is found, a message box window opens. Save Saves the control strategy to the database. Control strategy information is editable. If a duplicate control strategy name is found, a message box window opens. Cancel Close the control strategy area window without changing. Also, the control strategy screen may contain some additional selection items, such as button items. Table 14 shows an example view of some additional button items on the control strategy screen. Table 14 Extra Control Strategy Buttons Press Sister Description Close Closes the control strategy screen and returns to the Run to Run controller 37 200532795

New (New L Copy)

Edit Deaf Screen __ Acquire a new control strategy. Enter the control strategy name difference and configuration. Select the control strategy and click Copy. By default, the copied dad strategy is not protected and the control strategy name is blank. The user views the control strategy and clicks "Edit" to edit an existing control strategy configuration. Do not select protection before editing Edit the configuration once protection is turned off.

Delete the user to view the control strategy and click 仏 丨 to delete the existing control strategy. If the control strategy is protected, the delete button is active. The user reviews the control strategy and clicks Move to move to the user's specific destination folder and location. Standard control strategies can be moved to the simulation folder. If the simulation control strategies lack synchronization information with the system recipe of the process tool, they cannot be moved to the standard file A.: Try configuring the button. Click to select some historical measurement data to test the control strategy configuration. It is only used when the R2R controller is not connected to the factory. _ Control Strategy ^^^ Savigator) s; ^ i is displayed on the Control Strategy screen ϋThere are two types of folders: Standard and Analog. The standard type folder contains the tool's heart control and control strategy (configured for normal batch (mn to mn) integration control. This folder contains simulation control strategies. Each simulation control strategy and pseudo-day butterfly. Jiqi Lai type, the plan will be adjusted and can be ί 二 士 二 / 数 will be recorded on 1ngeili〇 'but will not be sent to the process tools. Simulation control strategy, but only-a standard type of control plan Du Zhiyi. Standard control strategy can be moved from Xianwen to the second simulation control strategy can be moved to-standard folder, as if the tool is downloaded. Protected control strategy has the control strategy riding side -Health number. Only the tilted controller can be executed. 38 200532795 For example, as shown in Figure 8, by using a control strategy screen, a user can execute a control strategy configuration, view an existing control strategy, create a New control strategies, copying an existing control strategy, editing an existing control strategy, and deleting an existing control strategy. 'Figures 9A-9C show exemplary views of a control meter screen according to an embodiment of the present invention. These firefly The screen allows the user to configure integrated control information for the process tool to input control process and control failure action information and control algorithm information. In a single box, a user can enter information related to each control recipe. The etched amount is trimmed for packing. In FIG. 9A, an integrated tab page is shown according to an embodiment of the present invention.

The screen can contain some configuration items. Table 15 shows an exemplary view of some groups of sad items on the control day screen. ^ _jg Statement Features Feature __ Description Control Plan Description

---_____________ = When you select I protection and click 〇κ or Save, the software logic checks this configuration. If this configuration fails, one of the message box windows opens stating the failure. Because only one standard control day at a time can be triggered due to the cooperation with the ㈣ formula, the software logic only executes the control day at the upper end of this table.

Name

Description Protection Edit this configuration.

System Recipe Module Nominal Rceipe 39 200532795

Data checkbox

Target The user enters a target CD value with a tolerance. The input target CD with the measured average value of the initial control CD is used to calculate $ 1 whole engraved volume for control recipe selection. If ° is selected, the target CD tolerance is compared with all trim etching amounts entered on the algorithm information tab. Target Calculation t = f (d5〇) (Target calculation t = f (d, 〇)) Source # Model Selection Table Table 16 shows some additional button items on the control plan screen Example view Table 16 Control meter day g Extra button Description of button Close Close the control meter day screen and return to the Run to Run controller screen. New Create a new control plan. Enter the control plan name and integration information to combine process tools to control CD information and control erroneous actions, while algorithm information is used to map the etch amount to each control recipe before it can be protected and stored. Copy Select the control day and click Copy. By default, the copied search is protected and the control account name is blank. Edit the control book in Edit (Edit) and click “Edit” to edit the existing control configuration. 200532795 Day and day configuration. You can edit the configuration without selecting protection before editing.

Delete (Book! 1) Move

Test (Test) User view control day and click Deete to delete an existing function. User view control Sets the target file. Fresh _ Ji day can be moved to the simulation folder. Unexpectedly, 4 missing, long process test configuration. Paste test control meter day field. There is a role in the difficult-to-connect interface. The tree system does not contain two types of folders. Standard and simulation. Standard ^ is the micro-control on process 4-^ 'is ^ 4 is irrelevant ^ required. The controller (TL and / or R2R) receives and processes the measurement data. The control recipe selected or calculated is recorded by the person instead of being sent to the process = multiple control days can be triggered simultaneously. Xixia control plan day display items may include the name of the control plan-name booth, description of the stop; and-protection box. When the protection is not selected, there are two standard irons in the label and the screen: integrated labels, control-some buttons are also displayed, which include:-confirm (οκ) button,-store ΓΓ a volume =? NCt Press / Ugly, One Close (C10Se) Button, One New Right_w) = One Copy Button, One Editor Button, and One Delete (De Button) to create, delete, View and edit control recipe items. The system recipe name block and related selection buttons provide a means to download system recipes from a job and (Telius) and display them. Also, a user / can directly: control can be edited 200532795 Enter the name of the system recipe. The name of the system recipe is used to trigger the control of the day counting by matching. Furthermore, 'select to open the load port selection window by pressing _, the user can select the load port, and then select from Rated recipes: The name of the recipe included in the selected recipe, the name of the first visitor, and the name of the first party. The rated recipe-2nd block brief package ^ ^ The leg of the selected secret party. The second visit to the f process recipe U. Cotai exhaustion according to the choice (Iv) equipped with feed / control room display order of the buttons. Divergent bonded to Fo

㈣ ^ 1 The leg control setting information is included in the system formula from the security device. If the silk contains the control 9 ^ _ 'control ^ tab is displayed according to an embodiment of the present invention. There may be three sections in the tab page; control and target CD, off: actions that failed with ribei, and actions that failed on recipe selection. As a result, the user of the watch box can refer to the Timbre ODP configuration to select the control CD from this table, and can enter a description about the selected control CD.

Ji Lei is used to choose the control method (step average or wafer average) of the CU calculation | St. The measurement steps set up and display the IM measurement steps. If the step Ping is selected, the 1m measurement step is set. If the wafer level- ^ button is selected, the measurement step of 5 out of 5 will fail and be in the target cp block. The person who enters the target will have one of the target CD values with tolerances. The input target CD of the average value of the initial control CD is used to calculate the selection of the common control recipe. If protection is selected, the input target CD tolerance is compared with all trimming quantities entered on the · Method tab. 42 200532795 If the measurement data fails to be generated or the variable setting selection fails to be generated, the user can choose one of the following options: υ use the guard to make the other (rated formula). The software logic sends instructions to the rainbow gear, and the rainbow gear uses the recipe of the health equipment process. 2) No processing SB circle (empty formula). The software logic sends wafer phase_empty recipe information to the process tool ’and the wafer enters and leaves the chamber without being processed. 3) Stop the batch (nm_t〇 control (None). As shown in FIG. 9C, a different method tab page is displayed according to an embodiment of the present invention. For example, a simple box algorithm may be The method of selecting the control recipe based on the trimming side. If the control formula of the noodle is the same as the &amp; process recipe on the manufacturing fixture, the name of the control value is preset to "敎".

The magnetic tool is the same as it is used in the recipe of the same tool process. There are two buttons on the Causarist #Calculation Algorithm tab. Bin button (Bin button) is used to open the packing table window (® 1_ for controlling the configuration of the connection between the recipe and the trimming amount, and the Clear button) can be used to clear the box table setting.

The smartwatch window can have three sections. Silk boundary input allows the user to enter a photographic boundary. The recipe range filter allows the user to view all protection control recipes related to the selected recipe range. Always select the control recipe square and the control recipe 2 cell to open the control recipe selection window. After selecting from this list for two visits, the trim etch amount for each displayed control recipe can be entered. Soft Total amount of visits. The control recipe viewer is located at the bottom of the screen. The Control Recipe Viewer allows the user to view the Gamma Reading Axis. The system is displayed based on information entered from the control recipe screen. When a user selects the control recipe 丨 or the cell of recipe 2, the control recipe selection window opens and allows the recipe. In the default state, "name ,, rated, and, and empty" appear before two m, and empty means that the selected visit is not processed. If-the new control recipe is appended to the range with the relevant recipe. The control recipe is returned. · The person who can open it! The recipe can be deleted. Then, the user chooses to control the new control recipe in his own remote selection window. 43 200532795 Fierce, * 2 Sit1 meter configuration, the software logic successively calculates the boundary based on the trimmed side quantity boundary of the table number given to the box name 屮 ^ side quantity input. Finally, the lower and upper borders of the box table are displayed on the algorithm's standard iron sheet. 〇 ^ T (LowerMi 榇 位 海-目 蛐 尤 f, the upper (UPPer) block shows the upper boundary of the box; Etch) 2 shows the total repair amount; the side i (touch position display first-visit trimming remaining = 'side 2 (Etch2) column shows the second visit trimming last name; control formula ontrc ^ e-l) column shows first The name of the visit control recipe; and the control recipe (〇ntrolRecipe2) block displays the name of the second visit control recipe. In FIG. 11, it shows a state according to an embodiment of the present invention: the camp screen allows the user to view the table ^^ π display control status screen The control status screen may contain an exemplified view of some groups of sad items on some configuration items. Table 17 Control Status 糌

44 200532795 node graph (Timing of the room order node graph) Some additional configuration items at Twilight Table 18 shows an example view of the control status screen for some additional group sad items. Table 18 Extra control status

lVlUUC ^^; quasi or simulation or test don't say!

CJID PJID

Slot ID Wafer Π (wafer identification code) The wafer identification code is displayed in the order of display priority. If there is a daylight wafer ID, it is displayed. If there is no ijji®, the substrate wafer identification code from the host is displayed. Init · CD (Initial CD) On-site control CD measures the average initial cd Etch (etching) of the total etch in the book. Mi 1 (etching 1) The first etch amount in the control room or chamber that is placed in the control day. Etch 2 Etch 2 The amount of money for the second control visit or chamber in the control day. Control Recipe 1 The control variable sets the name of the first control visit or room. Control Recipe 2 The control variable sets the name of the second control visit or room. Result Controls the result of the wafer. There can be four values. • Selected-Control recipe successfully selected • Selection error _ Control recipe selection failed • Link error _ Telius_Ingenio communication failure-Eryi Er measurement data error 45 200532795 In addition, the control status screen may contain some selection items, such as button items . Table 19 shows an example view of some button items on the control status screen. Table 19 Control status screen buttons Button Description Close Switch from the control status screen to the Run to Run controller screen. Select Opens the control status display selection window. In one, 12 shows a status screen according to an embodiment of the present invention. In the embodiment shown, a COR module, a PHT module, and an ODP module are shown in a group. • The sub-panel can be used to display the information of each process module. Information about the wafers currently in a system module can be displayed in the pM, RunID, and Plan locations t. For example, PM can be the name of the process module; RunID can be the identification code of the current wafer formula; and plan can be the name of the data collection plan performed on the current wafer. , ^ # For example, as shown in Figure 12, a user can view a status screen to ensure that a cOR switch set, a PHT module, and / or a 10dp module are using the correct data collection plan. For example, a user can confirm that appropriate measurement data is being collected. In 13, a configuration screen is displayed according to an embodiment of the present invention. In all cases, a cOR module, a pHT module and a 0Dp module are shown. -The navigation tree displays the sensors and maintenance counters associated with each module. In addition, Ϊ shows the data collection plan and strategy related to each module. In addition, the module pause group is whispered for each side group. —The user can configure the pause action by using the analyzer. A &amp; fOR, PHT, and ODP container can be configured during system installation, and the container group can be changed by using a GUI screen obtained from the configuration screen. Use drop-down tables. In FIG. 14, a configuration screen is displayed according to an embodiment of the present invention. In place 46 200532795

In the example shown, a co-R is associated with each fitness group. Again temporarily = thief riding. ， 者 领 __ 丨 Days and strategies come to match the plan, and the data collection plan

And day-to-day is about—combination of process modules and process recipes. Because the policy contains the same process recipe, coffee can allow multiple controls—different process module recipes may have different process module recipe limits. Therefore, the solid core needs to be able to set the recipe level to be used for recipe modification, and the recipe modification is to be transmitted to the tool through the R2R controller. The control meter can specify that the minimum and maximum of one control model to be used ^ The module range may overlap. If there is no roaming minimum and / or maximum turn, the scope of the legacy will not be limited.

A method using an R2R controller requires the creation of a control strategy linked to a tool (Telius) recipe when a system recipe has been built on the tool. Users can enter data collection and analysis plans for each module. The user can enter a control plan for one of the specific chambers to be controlled (what chamber data to use and analyze the method). The module types of N, COR, PHT, ODP, and buffer chambers can be stored in the data. In the library. Therefore, a user can configure the module instance of COR, PHT, ODP, and buffer chamber after installation. For example, you can use a module instance that is part of the system to configure the screen. In addition, you can use the data manager screen to create strategies and schedules for CO, PH1, ODP, and buffer rooms. For example, a user can create a data collection strategy and analysis strategy for COR, PHT, 0Dp 47 200532795 chambers when this module instance is set on the screen of the module instance. Coro, PTZ, ODP and buffer rooms can also use chart screens. The data management system collects the track record files and processes the record files completed in the COR and PHT container rooms. The tracking record data selected according to the DC meter day will be stored in the database; the user can use the data selected according to the DC meter day for the analysis plan '. The user can use the data selected according to the DC meter day to make table. In addition, a GUI screen can be used to display necessary information about the COr and pHT processes during operation. The user can use the module pause feature to pause one and / or the PTZ chamber, if it is set. The TL controller can perform a module pause when it detects a spc alarm for a COR chamber parameter or when it detects an SPC alarm for a -PHT chamber parameter. Modular group pauses can be configured by using analysis strategies and analysis plans for each chamber. Fig. 15 shows a schematic sectional view of a processing system according to an embodiment of the present invention. In the embodiment shown, the chemical treatment and processing of the substrate-to-substrate is provided, and the reason-plus 4 system 丨 Lujiawei system 12 is provided. . Contains-heat treatment system 12, 0, a chemical treatment system 1220 connected to one of the thermal management systems 121. The heat treatment system 1210 includes a temperature-controllable heat treatment chamber 1211 2 and a temperature-controllable-chemical treatment chamber 1221. The heat treatment chamber α, the processing chambers 1221 can be insulated from each other by a heat-insulating component ㈣, and can be vacuum insulated from each other by using a gate valve assembly 1296. These will be described in more detail below, as shown in Figures 15 and 16, The chemical treatment system 122〇 further includes a one-temperature installation and a chemical treatment chamber 1221 that are insulated and "", cavitation, and a treatment chamber 1221; and-a gas distribution system ^ two g treatment! One of the process space in the chemical treatment chamber 1221. 1262. The supporting part 1270 is installed in the processing chamber 1911 ^: / dish control substrate support chamber 1211 and two ff: inside and configured to be substantially insulated from the heat treatment capacity ⑵i and configured to support the building-substrate ⑽; —Vacuum extraction is deleted by 48 200532795

Gu to 1211 ′ and a substrate lifting rod assembly ㈣ connected to the rail = t drop rod Γ 1290 can vertically move the substrate 1242 between the support plane_ and one of the transmission planes of the substrate S ΙΓΐί field. The heat treatment container 1211 may further include an upper component 1284. H ^ processing chamber 1211, chemical processing chamber 1221, and heat-insulating component 1230 曰 口 口 部 1294 'A substrate can be transported through this common opening 1294 During the lit, the common opening 1294 can be used by a gate valve assembly 1296 was sealed under seal to allow independent processing in two chambers 12u, 1221. again

Alternatively, a one-feed opening 1298 may be formed in the heat treatment chamber 1211 to allow the substrate to be exchanged with the transport system. To put it bluntly, a second heat-insulating component 1231 may be implemented to insulate the heat-treatment chamber mi from a conveying system (not shown). Although the opening 1298 is shown as a part of the heat treatment chamber 1211, the conveyance opening 1298 may be formed in the chemical treatment chamber 1221 instead of the heat treatment chamber 1211, or the conveyance opening 1298 may be formed in the chemical treatment chamber 1211. 1221 and the tritium processing chamber 1211. .

As shown in FIGS. 15 and 16, the chemical processing system 1220 includes a substrate support 1240 and a substrate support assembly 1244 that allows thermal control and processing of the substrate 1242. The substrate supporting portion 1240 and the substrate supporting portion assembly 1244 may include an electrostatic clamping system (or mechanical clamping system) to electrically (or mechanically) clamp the substrate 1242 to the substrate supporting portion 1240. In addition, the substrate support portion 124 may, for example, further include a multi-zone temperature control system, which may receive heat and transmit the heat to a heat exchanger system (not shown), or may transmit heat from the heat exchanger system during heating. . In addition, a heat-transporting gas may be transferred to the back surface of the substrate 1242, for example, via a back-surface gas system, to improve the thermal conductivity of the gas-gap between the substrate 1242 and the substrate support portion 1240. For example, the heat transfer gas to the back surface of the substrate 1242 may include, for example, helium, argon, xenon, krypton, such as CF4, QFS, QFs, (¾, etc.), or other processing gases such as oxygen, nitrogen, or Hydrogen gas. This system can be used when a temperature control substrate is required when raising or lowering the temperature. For example, the back gas system can include a multi-zone gas distribution system such as one of two zone (center-edge) systems, The back-to-back gas gap 49 200532795 can be independently changed between the center and the edge of the substrate 1242. In other embodiments, the multi-zone temperature control system may include heating / cooling elements (such as electric and heating elements), or thermoelectric heating Cooler / cooler. An exemplary thermoelectric element is available from Adva ^ ed

A component obtained by Themielectric Company, model ST-127-1.4-8.5M (40 mm X 40 mm X 3.4mm thermoelectric device with a maximum thermal energy transmission power of 72 w). Also, an additional heating / cooling element may be provided on the wall surface of the chemical processing chamber 1221. —The substrate supporting portion 1240 may include a connection unit (not shown) for connecting the substrate supporting part 124 to a chemical processing container, an insulating component (not shown), and a temperature

Degree of interference control component (not shown). The chamber junction and temperature control assembly may be made of, for example, a non-conductive material such as stainless steel, stainless steel, nickel, and the like. The edge device can be made of a thermal material, such as quartz, which has a relatively low thermal conductivity. κ 涵 尔 阴 寻 逢 支 # 部 124G may further include an insulation gap (not shown) in order to provide additional insulation between the pieces. For example, '-adiabatic gaps can be filled or drawn to change their thermal conductivity. The post may further include a lift pin assembly (not shown), which can lift

The temperature of the base can be monitored by using, for example, a temperature sensing split (not shown) of a thermocouple (e.g., K's, ‘, Ϊ, 感, 感). Then J can be used as the temperature measurement to control the temperature of the substrate support 124G. For example; = == ^ 度 #, gas_, heat transfer pressure, ^ less f ^ pressure, thermoelectric device current or polarity, etc. Refer to Figures V and V for further details. 4 =? ^^ 10 / CA 予The processing system 1220 packs ^ a teaching system g? In four cases, as shown in Figure 18, used to distribute a processing gas containing at least two gases 50 200532795 One of the gas distribution system 1260 contains ... Gas distribution assembly 1422 'having _ or more elements 1424, 1426, and 1428;-a first gas distribution plate 1430 connected to the gas distribution assembly 1422 and specifically formed to connect a first gas to a chemical processing chamber 1221 A space; and a second gas distribution plate 1432, which is connected to the first gas distribution plate 1430 and is specifically formed to connect a second gas with the processing space of the chemical processing chamber 1221. The first gas distribution plate 1430 forms a first gas distribution inflation cavity 1440 when connected to the gas distribution assembly 1422. In addition, the second gas distribution plate 1432 forms a second gas distribution inflation cavity 1442 when connected to the first gas distribution plate 1430. Although not shown, the gas distribution plenums 1440, 1442 may contain one or more gas distribution partitions. The second gas distribution plate 1432 further includes: one or more holes 1444 of a first array, and one or more channels 1446 formed in an array of the first gas distribution plate 1430 communicating and overlapping; and a first One or more holes 1448 of the two arrays. The one or more holes 1444 of the first array associated with the array of one or more channels 1446 are specifically formed to distribute the first gas from the first gas distribution plenum 1440 to the process space of the chemical processing chamber 1221. One or more holes 1448 of the second array are specifically formed to distribute the second gas from the second gas distribution inflation chamber 1442 to the process space of the chemical processing chamber 1221. The processing gas may include, for example, NH3, HF, H2, 02, co, CO2, Ar, He, and the like. Each hole 1444, 1448 includes a diameter and a length, wherein the diameter can range from about ϋ · 1 mm to about ι0 cm, and the length + degree can range from about 0.5 mm to about 5 cm. As a result of this configuration, the first gas and the second gas system are independently introduced into the process space without affecting each other outside the process space. The temple, the animal H body, is connected to the first gas distribution inflation chamber 1440 via the first gas master, which is formed in one of the gas distribution components 1422 a. In addition, the second gas distribution module 1422 a-the first Two gas supply channels (not shown) and lightly connected to the second gas distribution inflation chamber 1442., Temperature and processing capacity more included _ One control can be connected to-for example, a wall heating element 126 &lt; brewing degree The control unit 1268, and the wall heating element 1266 may be specifically formed toward 51 200532795 to connect the chemical processing chamber 1221. The heating element may include, for example, a resistance heater element such as tungsten, nickel chromium alloy, aluminum iron alloy, aluminum nitride, etc., Such as a filament. When current flows through this filament, the power is dissipated as heat. Therefore, the wall surface control unit U68 can, for example, include a controllable DC power supply unit. For example, the wall surface heating element 1 can include a commercial At least one Firerod collet heater is available from Watlw Corporation (131 ° King Siand Dr., Batavia, IL, 60510). In chemical and processing, a cooling element can also be used in the chamber 1221. Chemical treatment The temperature of the chamber 122m can be monitored by using a temperature sensing device such as a thermocouple (such as a K-type thermocouple, a pt sensor, etc.). Furthermore, a controller can use the temperature measurement as a wall surface temperature control unit. Feedback from 1268 to control the chemical processing chamber 1221

temperature. Considering FIG. 16 again, the chemical processing system 122 may further include a temperature-controlled gas distribution system 126 that can be maintained at any selectivity. . For example, a gas distribution heating element 4 12 ^ 7 is connected to the-gas distribution system temperature control unit 1 and a gas distribution heating element 1267 may be specifically formed to connect the gas distribution element 126. The heating element may be, for example, a resistance heater such as a filament, a nickel-chromium alloy, an iron alloy, a nitride nitride, or the like, such as a filament. When a current flows through the filament, the power is dissipated as 敎. Therefore, the temperature control unit 1269 of the rolling body distribution system may, for example, include a controllable dc power source. Alas. For example, s, gas distribution heating element 1267 can be

Or ^ power density) one of the dual section side rubber heaters (two thick). The temperature of the hole body / knife system, system 1260 can be monitored by using a temperature sensing device such as a thermocouple (such as a sensor, etc.). It is used to control the temperature of the gas distribution system and the system 1260 by measuring the / JEL degree as a response to the temperature distribution unit 1269 of the gas distribution system. Alternatively, or in addition, a cooling element may be used in any of the embodiments. Gan's spot-with 16, vacuum pumping pure 125G can include-vacuum pump 1252 A = suppression chamber pressure. The vacuum pump 1252 may contain a pump having two seconds per second. One turbo molecular vacuum pump () with a vacuum rate greater than). For example, the TMP can be a Seiko STP-A803 vacuum pump, or a 52 200532795 vacuum pump. For TMP for low pressure processing (generally less than 50mT㈣ is two pairs of south pressure (i.e., greater than HT—or low flux processing (i.e., no gas k)), a mechanical pressure pump Vacuum pump. 2 Referring to FIG. 16, the chemical processing system 1220 may further include a controller 1235, two: a microprocessor, a memory, and a digital 1/0 璋 capable of generating sufficient transmission = starting input to the chemical processing system 1220 and monitoring Control voltage output from, for example, temperature and pressure sensing chemical processing system 1220. In addition, the controller &amp; 35 can be connected to substrate support assembly 1244, gas distribution system 1260, vacuum extraction system 1250, gate valve assembly 1296, wall surface temperature control unit 1268, and gas distribution system temperature control fresh element 1269, and can exchange information with them. For example, you can use the program stored in the face towel-programming evidence-manufacturing wealth to record to The aforementioned components of the processing system 1220. * In an alternative embodiment, a chemical processing system 1220 may further include an optical inspection window (not shown), and at least one pressure sensing device (not shown). See Figure 15 and 17 It is clear that the heat treatment system 121 ° further includes a temperature-controlled substrate 127. The substrate support portion ㈣ includes a base 1272 fixed to one of the heat insulation valleys to 1211 by using a thermal barrier η%. For example, the substrate support The part i27〇 ^ r is made of aluminum, stainless steel, or nickel, and the thermal barrier 1274 can be made of a heat insulating material such as Teflon, alumina, or quartz. The substrate supporting part 1270 also includes one of the heating elements embedded therein. 1276 is connected to a temperature control unit of a substrate supporting part ^ 278. The thermal element 1276 may include, for example, a resistance heater element such as a crane, a nickel-chromium alloy, an iron alloy, or aluminum nitride, such as a filament. When the current flows When passing through the filament, the power is dissipated as heat. Therefore, the substrate support portion temperature control unit 1278 can control the DC power supply portion, for example, or the heated substrate support portion 1% can be commercially available from 400 A casting heater, or a thin film heater made of aluminum nitride material, obtained from Watlw (UjOKingsland Dr., Batavia, IL, 60510) to 45 (the maximum operating temperature of TC). Watlow Corporation has an operating temperature like 300 C-South and a power desire of up to 23.25 W / cm2. Alternatively, a cooling element can be incorporated into the substrate support 1270. 53 200532795 Temperature of the substrate support 1270 It can be monitored by using a temperature sensing device (not shown) such as a thermocouple (such as a κ-type thermocouple). Furthermore, a controller can &amp; use temperature measurement as a temperature control unit for the substrate support portion 1278 Feedback so that the temperature of the substrate supporting portion 1270 is pricked. 1 In addition, the substrate temperature can be monitored by using, for example, a temperature sensing device of a fiber optic thermometer or a band edge temperature measurement system, where the fiber optic thermometer is commercially available from Advanced Energies (1625 Sharp point drive, F〇rt ^

Colons, CO, 80525) ’. Acquired by model 〇R2_F, which has a measurement accuracy from 50 to 2,000 &lt; t, plus or minus 1.5 ° C, and the band edge temperature measurement system is the US special case number in the trial What 1G / 168544 relies on, the Chinese date is July 2 of the 2nd year, and all its inner valleys are incorporated here as a reference. Referring again to FIG. I7, the heat treatment system 1210 further includes a temperature-controlled heat treatment chamber mi maintained at a selected temperature. In terms of paste, the button surface heating element 1283 can be connected to the hot wall surface temperature control unit 1281, and the hot wall surface heating element 1283 can be formed integrally to connect the heat treatment container 1211. The heating element may include, for example, a resistance heater element such as a chromium alloy, an aluminum-iron alloy, or a nitride nitride. When a current flows through the filament, power is dissipated as heat. Therefore, the temperature of the hot wall surface is controlled. Early 70 1281 can include a controllable DC power supply, for example. For example, $ Heating τοpiece Π83 may include commercially available i3i〇Kings ^ d

Λ々Γν = ^ 6θ51 ()) at least -Firen) d collet heater. Alternatively, or otherwise, a cooling element may be used in the heat treatment chamber 1211. The temperature of the heat treatment chamber ΐ2m can be monitored by making it as hot as possible (e.g., κ-type thermocouple, pt = sensing device. Furthermore, the controller can use the amount of temperature ^) of the surface temperature control unit 1281, In order to control the heat treatment container, referring to FIGS. 15 and 17, the heat treatment system Ul 10 further includes an upper component 3. Part I ^ Niu 1284 can, for example, include a gas injection system 'to blow the rolling body, process gas, or purge gas into the heat treatment chamber 12 丨 1. ′, With reference to FIG. 2 again, the heat treatment system test may further include a piece that can be maintained at a selected temperature 54 200532795 and 1284. For example, a heating element 1285 of the upper component temperature control unit A 1286, and the heating element 85 of the sundries are specifically formed to control the temperature of the upper component 1284. ^ The thermal element can include, for example, tungsten, chromium alloys, iron alloys, nitrides, and other blocking elements, such as pro. Examples of commercially available materials that can be used to make resistors and resistors include Kanthal, Nikr〇thal, Akf〇thal, which are registered trademark names of metal alloys manufactured by Kanthal Corporation of = ethel, CT. The tnthal family contains ferrite alloys (FeCrAl), while the Nikrothal family contains austenite = gold (^ Cr, NiCrFe). When a current flows through the filament, the power is dissipated as chirp. Therefore, the upper component temperature control unit 1286 may, for example, include a controllable DC source supply unit 2. For example, the 'upper cymbal heating element 1285 may include a dual-zone silicone rubber heater (10 thickness) having a contact w (or, a power density of 5 W / m). The temperature of the upper component 1284 can be monitored by using, for example, a thermocouple (e.g., a κ-type thermocouple, a temperature sensing device of the grill). Furthermore, the controller can use the temperature measurement as the temperature of the upper component temperature control unit 1286. Feedback, part temperature. In an alternative embodiment, the upper component 1284 is an radiant heater of an array of tungsten halogen lamps. The upper component 1284 may additionally include a cooling element. Referring again to Figures 15 and 17, the heat treatment system 121〇 further includes a substrate lifting rod assembly 1290. The substrate lifting rod assembly 1290 is specifically formed to lower a substrate 1242 to the upper surface of the substrate supporting portion 1270, and to remove the substrate 1242 "from one of the substrate supporting portions 1270. The upper surface is lifted to a support plane, or one of the transport planes in between. Therefore, the transport plane 'substrate 1242' can be exchanged with a transport system used to transport substrates into and out of the chemical and heat treatment capacity to 1221, 1211. The plane, substrate 1242, can be cooled while another substrate is exchanged between the transport system and the chemical and heat treatment chamber 1221, mil. Still referring to Figures 15 and 17, hot place The management system 1210 further includes a vacuum pumping system 1280. The vacuum pumping system 280 may include a vacuum pump and a throttle valve such as a gate valve or butterfly valve. The vacuum pump may include a pump having a capacity of up to 5000 liters per second (and greater than ) Of 55 200532795 H 疋. For high-pressure processing (that is, greater than Li mTbrr) and t, a mechanical pressure pump and drying low-vacuum pump can be used. &Quot; Megumi Zai Er Η Figure Η 'Heat treatment system M0 can be more Contains-controller, 1275, its start and end pulse memory, and-digital 1/0 port can generate enough thunder / secondary system 1210 and monitor output control 11 1275 from heat treatment system 1250 can be connected to the substrate support Single temperature control, single temperature control, Yuan 1286, upper component 1284, hot wall surface temperature, industrial exhaust system 1280, and substrate lifter assembly 丨 29〇 ==! ^ For information, for example, it can be stored on the side One of the procedures ^ Based on the clothing process recipe to start the aforementioned elements imported into the heat treatment system 1210. The tool 2 of 5 7 is a DELL PRECISION workstation 610, which can be obtained from Austin, Texas. Made by Dell In-replacement, the control 1235 and 1275 can be the same control ασ temple. In addition, the heat treatment system, the system 1210, and a substrate detection system (not shown), in order to confirm whether the-substrate is located in the support plane. The substrate system can, for example, include a Keyence (headquartered in Osaka, Japan) digital laser sensor. Although some of the above detailed embodiments of the present invention are described, a skilled person will easily understand that: Without departing from the advantages of the teaching of the present invention, many modifications are possible in this embodiment. Therefore, all such modifications are intended to be included in the scope of the present invention. ° 5. Brief Description of Drawings Figure 1 shows an exemplary block diagram of a processing system according to one embodiment of the present invention; Figure 2 shows an exemplary flowchart of one of the processing systems according to one embodiment of the present invention; FIG. 3 shows an exemplary view of a trimming measurement according to an embodiment of the present invention; 56 200532795 FIG. 4 shows an exemplary view of a formulation according to an embodiment of the present invention; FIG. 5 shows an implementation according to one of the present invention An example view of a simple box algorithm, FIG. 6 shows an example view of a formula range screen according to an embodiment of the present invention; FIG. 7 shows an example view of a control formula screen according to an embodiment of the present invention, FIG. 8 shows an exemplary view of a control strategy screen according to an embodiment of the present invention, and FIGS. 9A-9C show an exemplary view of a control meter day screen according to an embodiment of the present invention; FIG. 10 shows an example of a control strategy screen according to an embodiment of the present invention An exemplary view of a packing meter screen; FIG. 11 shows an exemplary view of a control status screen according to an embodiment of the present invention; FIG. 12 shows an embodiment of the present invention An exemplary view of a status screen according to an example; FIG. 13 shows an exemplary view of a module configuration screen according to an embodiment of the present invention; FIG. 14 shows an example of a data collection meter configuration screen according to an embodiment of the present invention 15 is a schematic cross-sectional view of a processing system according to an embodiment of the present invention; FIG. 16 is a schematic cross-sectional view of a chemical processing system according to an embodiment of the present invention; A schematic cross-sectional view of a heat treatment system according to an embodiment; and FIG. 18 is a schematic cross-sectional view of a gas distribution system according to an embodiment of the present invention. Component symbol description: 200532795 100 ~ Processing system 102 ~ Start event 104 ~ Wafer out event 110 ~ Manufacturing equipment system (MES) 112 ~ Client workstation 120 ~ Tool level (TL) controller 122 ~ Data Library 130 ~ Likou Tool 132 ~ First Integrated Measurement Module (IMM) 134 ~ Second 1st 150 ~ Processing Subsystem 152 ~ First Buffer Module 154 ~ Chemical Oxide Removal (COR) Module 156 ~ Post heat treatment (pht) chamber 158 ~ Second buffer module 190 ~ R2R controller 192 ~ Chain 194 ~ Chain 200 ~ Program 210 ~ Receive measurement data before processing and define one of the input states of a substrate215 ~ Determine a desired state of one of the substrates 220 ~ Determine a desired process result 225 ~ Determine a process recipe 230 ~ Process this substrate 235 ~ Receive measured data after processing and define a round shape of a substrate Measurement data and measurement data before processing ^ 245 ~ Has the process been completed? 250 to end 1200 to system 58 200532795 1210 to heat treatment system 1210 'to heat treatment system 1211 to heat treatment chamber 1220 to chemical treatment system 1221 to chemical treatment chamber 1230 to heat insulation module 1231 to second heat insulation module 1235 to controller 1240 to substrate Support

1242 ~ Substrate I 1242, ~ Substrate · 1242 "~ Substrate 1244 ~ Substrate support unit 1250 ~ Vacuum extraction system 1252 ~ Vacuum pump 1254 ~ Gate valve 1260 ~ Gas distribution system 1262 ~ Process space 1266 ~ Wall heating element 1267 ~ Gas distribution heating Element call 1268 ~ wall temperature control unit 1269 ~ gas distribution system temperature control unit 1270 ~ substrate support 1272 ~ fixed base 1274 ~ thermal barrier 1275 ~ controller 1276 ~ heating element 1278 ~ substrate support temperature control unit 1280 ~ vacuum Air system 59 200532795 1281 ~ Hot wall surface temperature control unit 1283 ~ Hot wall surface heating element 1284 ~ Upper unit 1285 ~ Upper unit heating element 1286 ~ Upper unit temperature control unit 1290 ~ Lift lever unit 1294 ~ Common opening 1296 ~ Gate valve unit 1298 ~ Opening 1422 ~ gas distribution module 1424 ~ element 1426 ~ element 1428 ~ element 1430 ~ first gas distribution plate 1432 ~ second gas distribution plate 1440 ~ first gas distribution inflation chamber 1442 ~ second gas distribution inflation chamber 1444 ~ hole 1446 ~ Channel 1448 ~ Hole

Claims (1)

200532795 X. Scope of patent application: Green, «by chemical oxidation critical ==) _ expected state of the board, where the desired state includes at least-the target receives the pre-processing measurement data of the substrate, where the pre-processing measurement data determines The input status of the wafer and CD data before processing; Determine a process recipe by comparing the input state with the desired state; and ^ process the substrate by using the recipe, by chemically changing a plurality of exposed surface layers on the substrate, and then heat treating the substrate The surface layer of the chemical side. 2. If the substrate processing method by chemical oxide removal according to item 1 of the patent application scope further includes the following steps: receiving post-processing measurement data of the substrate, wherein the post-processing measurement data defines an output state and includes CD data of a processed substrate; determining whether the desired state has been achieved; ^ when a desired state of sadness has not been achieved, determining a new process recipe; and transmitting the substrate when the desired state has been achieved. 3. The substrate processing method by chemical oxide removal according to item 1 of the scope of patent application, wherein the measurement data before processing includes optical digital contour detection (〇Dp) data. 4. The substrate processing method by chemical oxide removal according to item 1 of the scope of patent application, wherein the post-processing measurement data includes optical digital contour detection (〇Dp) data. 5. The substrate processing method by chemical oxide removal according to item 4 of the scope of the patent application, wherein the post-processing measurement data includes scanning electron microscope (SEM) data. 6. The substrate processing method by chemical oxide removal according to item 1 of the patent application scope, wherein the pre-processing measurement data includes at least one desired CD, and the process formula is compared by comparing the at least one desired The control CD is determined by the target CD. 7. The substrate processing method by chemical oxide removal according to item 6 of the patent application scope, wherein the at least one desired control CD is larger than the target CD, and the processing 61 200532795 includes performing a trimming process. Seven / t ^ Please request the substrate processing method by chemical oxide removal in the scope of patent No. 7, wherein the trimming process includes: a chemical oxide removal (C0R) process formula for a COR module, = The plurality of exposed surfaces of the stabilizer plate are chemically treated by using a processing gas, and a solid reaction product is formed on at least the exposed surface; and W ΐ is performed by inspecting the reaction product of the shed body— The PKT module is used-^ The processing (PKT) process recipe 'the substrate processing method by chemical oxide removal, which has been chemically treated and exposed on the exposed surface of the patent scope, includes the following steps: The execution of the corporal OR process recipe and the execution of the PHT process recipe until | ~ V—the desired CD is approximately equal to the target CD. The method for processing a substrate by removing a chemical oxide according to item 9 of the patent 1 further includes the following steps: ^ 1 = post-measurement data, where the post-processing measurement data defines an output state of 4 g —The measured CD data of the processed substrate; determine whether the measured CD is approximately equal to the target CD; although the CD measured by δHai is not approximately equal to the target CD execution of the process recipe and the PHT Execution of process recipes, etc. ^ Wait for _ target Daiji, stop these execution steps. The method for processing a substrate by chemical oxide removal according to item 7 of the patent, ^ more deciding-the amount of trimming; wherein the trimming process includes: square, soybean ^^ 〇11 one of the chemical oxidation used in the module A solid reaction product having a thickness of a chemical removal (CO) process; and performing a post-heat treatment of a pHT module by evaporating the solid reaction product 62 200532795 (PHT) process At least one of the exposed surfaces chemically treated is trimmed by the trimming amount. The labor division divides the substrate plus the pre-requisite Puqi, and when shooting money, it has a pre-defined control formula for the pre-adjusted trimming value of the difference between the pre-processing CD data and the target CD. The substrate processing method by chemical oxide removal around item 11 further includes the following steps: 仏, standing -h table 'Each box contains-listen to the determined trimming value; of-; front: round the _ between The difference is that the pre-qualified control recipe is used as the process recipe. Method, more ^^: 11 substrate removal by ㈣ ㈣ ⑽ ⑽ ⑽ ㈣ build a look-up table containing one of the recipes; and perform a look-up table action to determine the process recipe. Method encircling the eighth step of the substrate processing by chemical oxide removal. The second step is to perform a COR process recipe. The steps include: ϊίίϊϋ Includes one of the modules of the chemical processing chamber; f ~ is placed in the installation_ The inside of the chemical processing chamber—the temperature-controlled substrate branch building—connects to the chemical processing chamber—vacuum reeling to change the processing chamber of the chamber and use it to introduce a processing gas into the chemical processing system; processing gas; And a vacuum pumping system and module, the temperature-controlled substrate supporting department, the pressure 63 200532795 patent scope No. 8 substrate processing method by chemical oxide removal, wherein the steps of executing the PHT process formula include: The substrate is transferred into a module containing a heat treatment chamber; the substrate is arranged in a temperature-controlled substrate support portion of Anxiang in the heat treatment chamber, and the capacity is changed using a temperature-controlled upper component connected to the miscellaneous processing chamber. Room temperature, = connected to the miscellaneous processing chamber—a vacuum pumping system to change the pressure in the chamber, and a recipe to control the PHT, vacuum reduction, and temperature control The temperature control system and a substrate support portion. The substrate processing method of removing the chemical oxide by the item No. 8 in the range of 17. == is used, wherein the surface includes a hard mask material. The 11th method of the 11th purely oxygen-based substrate processing method, wherein the surface contains an oxidized TERA material. The substrate 115 removed by the chemical oxide of the factory side plus the f0 processing bell includes-a fluorine-containing gas and-a nitrogen-containing gas. Gongfang, # 19 the method of substrate processing by chemical oxide removal, wherein the processing gas contains 111? And 1 ^ 113. Method gas 1 ·! 0 Erli 5 around item 8 of the substrate processing by chemical oxide removal ί The first gas contains independently introduced into the -processing space-the -the gas engineering side, as by chemical oxidation The substrate plus for material removal is to find the temperature of the recording board in the temperature range of about 10 m from the wrist. The substrate removed by the chemical oxide is added to the temperature of the substrate to 24 on the substrate supporting part of the room. · As stated in the patent scope No. 5 of the substrate removed by chemical oxide plus 200532795 i ^ nibrr where &amp; the pressure range of the chemical processing chamber ranges from about 1 mTorr to about 1500 square meters. The substrate is removed by chemical oxide removal to produce heat. The pulsation of the processing gas in the gas distribution system is controlled to be within a range of about 30C to about 10 (rc). The temperature of the substrate removed by the chemical oxide in the 15th item of the Fangli range plus the temperature of the wall of the chemical processing chamber from about 30 ° cf is controlled within a range from about 30C to about 100. 工 〇ίί f_16 Item #The substrate removed from the chemical oxide plus the temperature control from about to about $ The temperature range of the plate support is as follows: the substrate removed by the chemical oxide in the 16th item of ϋΐ1 range plus its ^, θ; tf the substrate on the temperature-controlled substrate support in the heat treatment chamber The degree of dryness of the plate is from about 1 (TC to about 50t :. τ Gully range of the substrate added by chemical oxide removal, and the pressure range of the processing chamber is from about lmT⑽ up to 100 mTorr 〇τ J The temperature range of the substrate plus the processing chamber removed by the chemical oxide according to item 16 is from about 10 ° C to about 50 °. The borrowing of item 16 of the patent range The substrate processing method for removing the chemical oxide further includes the following steps: arranging the substrate at a first distance from the substrate during the 帛 -time; and arranging the substrate at a distance from the substrate during the first time. Control the first component of the first distance. 32. For example, the method of substrate processing by chemical oxide removal according to item 16 of the patent application, further includes the following steps:-The temperature of the heat treatment chamber wall surface is controlled from about 1 to about 10 (within one of rc. 6 5 200532795 33 · :: Please specialize in the processing of the substrate by chemical oxide removal method ^ !, where the processing ^ measurement data contains about at least-insulation characteristics Γ / ;, at least: nested features Part of the nested cd data, and the manufacturing process is determined by the ratio of the insulation CD material and the nested CD data to the target cd. The oxidation method further includes the following steps: You knife performs a trimming process based on the difference between the insulated CD material and the target CD material; and performs two trimming based on the difference between the silk CD material and the target CD material. Process. 35. If the basic method for removing oxides by chemical oxides in the scope of application for item 33 includes the following steps: Based on the difference between the CD data of the -part-characteristics and the target CD data, a first A variable increment (delta); the difference between the CD data of the Ministry and the target CD data depends on a first variable increment, and based on the difference between the first-Wei increment and the second variable increment, perform a Trimming process. ^ 36. If you apply for a substrate processing method that specifically addresses the removal of chemical oxides at the age of item 33, the pre-processing measurement data includes the appropriateness (GOF) data and depth data. Engineering 37. For example, by applying the chemical oxide method of the scope of patent application, the method further includes the following steps: receiving post-processing measurement data of the substrate, wherein the post-processing quantity is an output state and includes CD data of the processed substrate; These process characteristics and process models calculate the predicted state of the wafer; determine whether the predicted state has been reached by comparing the output state with the predicted state; and ~ 66 200532795 = ^ state counties were reached Scale, calculation-repayment of the shop. In order to facilitate the first item, the substrate processing method of the substrate removal by chemical oxides, the "Haihai clothing process formula, is determined by the implementation of-control strategy and-control of the day." “The method of removing a substrate by a chemical oxide in the patent scope No. 8 further includes the following steps: transferring the substrate from the COR module to the PTT module. 40 · —A processing system for processing a substrate, including: '&gt; Level 7: Γΐί 人 糸 系 ’which contains a chemical oxidation removal (C0R) module for chemical formulas? A plurality of exposed surface layers on the substrate; a post-heat treatment (PHT) module 'for heat-treating the chemically-modified surface layer on the substrate; and two insulating components connected between the PHT module and the c〇R modules;: a first integrated measurement module (IMM), which is connected to the processing sub-system to provide pre-processing measurement data that determines an input state of the substrate; and a control device 'It is connected to the Guardian system and the -IMM, wherein the control device determines a process recipe to change the wafer from the input state to a desired state; and executes the process recipe. 41. The processing system for processing a substrate according to item 40 of the scope of patent application, wherein the COR module further includes: a temperature-controlled chemical processing chamber; a temperature-controlled substrate supporting portion, and a basin is installed in the chemical processing chamber and designed A vacuum extraction system connected to the chemical processing chamber; and a temperature-controlled gas distribution system for introducing one or more processing gases into the chemical processing chamber Capacitor chamber 42. For example, the processing system for processing substrates in the scope of patent application No. 40, wherein the PHT module further includes: a temperature-controlled thermal processing chamber; and a temperature-controlled substrate supporting portion installed in the thermal processing chamber and designed to To substantially insulate the heat treatment chamber; and a vacuum extraction system connected to the heat treatment chamber. 43. The processing system for processing a substrate according to item 40 of the patent application scope, wherein the control device further includes a temperature for controlling a chemical processing chamber, a temperature for a chemical processing gas distribution system, a temperature for a supporting part of the chemical processing substrate, a Temperature of Chemically Processed Substrate, 67 200532795 Division; Force 2 L Force :: Chemical Process Gas Flow Rate, -Heat Treatment Chamber: ==== Degrees, -Heat Treatment Substrate Temperature, and -Heat Treatment Center 3 Patent No. 4G Add H to the substrate, at least one of the absolute scale and the rotary button. 41. The security system for processing a substrate according to item 41, wherein the chemical processing valley is chemically processed to include a wall surface heating element. 46. A processing system for processing a substrate as claimed in item 41 of the patent, wherein the temperature system includes at least a gas distribution plate, and the gas contains one or more gas injection holes. And Λ7ΐ7 patent range of the processing substrate plus I system, in which the temperature-control substrate-like part of the ???? includes-electrostatic clamping secrets, a back gas supply system and one or more temperature control elements At least one of them. 48. The processing system for processing a substrate according to item 41 of the Rugao patent, wherein the temperature-controlled substrate branch in the chemical processing chamber includes one or more temperature-controlling elements. 49. The processing system for processing a substrate according to item 41 of the patent application, wherein the gas distribution system includes:-a gas distribution gas chamber and-a gas distribution plate having one or more holes in a first array And one or more holes of a second array for coupling the first gas to the process space through the one or more holes of the first array in the first gas distribution plate; and the second gas distribution The inflatable cavity and a second gas distribution plate 'have a plurality of channels therein for passing through the fourth-grade channels in the second gas distribution plate and one or more holes in the second array in the first gas distribution plate, The second gas is coupled to the process space. a 50. The processing system for processing a substrate according to item 49 of the scope of patent application, wherein the gas is independently introduced into the process space. 51. For example, the processing system for processing a substrate according to item 42 of the patent scope, wherein the PT module further includes a substrate lifting rod assembly connected to the heat treatment chamber for a transmission plane and the substrate supporting portion Vertically translate the substrate. 68 200532795 52. For example, the processing system for processing substrates in the scope of application for patent No. 40, wherein the processing subsystem is connected to a manufacturing system. 53. If a processing system for processing a substrate is applied for under item 40 of the patent scope, the control device also determines whether the desired state has been achieved. Eleven schemes: 69