TWI264079B - Method and system for adjusting a chemical oxide removal process using partial pressure - Google Patents

Abstract

A method and system for trimming a feature on a substrate. During a chemical treatment of the substrate, the substrate is exposed to a reactive gaseous chemistry, such as HF/NH3, under controlled conditions. An inert gas can also be introduced with the reactant gaseous chemistry. A process model is developed for an aspect of the first reactant, an aspect of the second reactant, and an aspect of the optional inert gas. Upon specifying a target trim amount, the process model is utilized to determine a process recipe for achieving the specified target.

Description

1264079 IX. Description of invention: [Reference to relevant cases] The application system and method of the substrate related to the following patents and the following patents are used to deal with bribes, No. 5, 201; 12曰提^, the processing system and method for the chemical treatment of the substrate in the application" and "for the national patent application No. 10/705, 200; fine 3 years! f^f please the beauty of the name, the name is " Processing System for Heat Treatment of Substrates and Applications, Patent Application No. 1G/7G4, 969; Wu Guo, "Methods and Equipment for Adjacent Temperature Control Room", November 12, 2003 No. 10/705,397; 77=Bao 558 from the agent Wu’s special essay on the same day (4), the invention name is = 糸 糸 与 方法 方法 方法 而 而 发明 发明 美国 美国 美国 美国 美国 美国 美国 美国 美国 美国I am referring to xxx #u. (4) The compatibility of the application is included in the patent [Technical Field] The present invention relates to a method and system for processing a substrate, and more particularly to a system for chemically processing a substrate And method. [Prior Art] During semiconductor processing, a (dry) plasma etching process can be utilized to remove or etch material along the fine lines or vias or contacts that form patterns on the germanium substrate. The plasma nomenclature "程通#" includes a semiconductor substrate having an upper patterned protective layer (e.g., a photoresist layer) disposed in the processing chamber. Once the substrate has been placed in the processing chamber, the ionizable dissociated gas mixture is introduced into the chamber at a predetermined flow rate while the vacuum pump is adjusted to achieve ambient processing pressure. Thereafter, a plasma is formed when a portion of the gas species present is ionized by electrons, wherein the electrons are transferred by inductive or capacitive radio frequency (RF) power, or by microwaves such as electron cyclotron resonance To heat; then 6 8 1264079 ί to cover the desired reactant concentration and ion distribution, so that in the ^ ^ = financial characteristics (such as the trench, through hole, flip ^ ^ ^ ^ ^ The substrate material to be etched contains _] specialized). The court awarded the material, the polylithic compound and the nitrite.匕3有—Wei Shixi (3) 〇 2), low-k dielectric during the material processing period, the pattern formed by the features of the side is transferred to the inside to form individual features, containing photosensitivity such as (positive or negative) photoresist Material, cover = multiple layers of the column coating (ARC), or a hard mask layer ~ (for example, photoresist) formed by the first layer of the first reed and the anti-reflective hard mask layer [Summary of the Invention] In the middle of the process, the target of the feature on the substrate is achieved; when the compound is removed to at least the constant parameter material, a process including the process of maintaining and a process pressure is used. One, the reactant, the younger one-reactant has to be a function of the -variable parameter:: learn to remove the process 'to get the parameter group among them, the beike, wherein the variable parameter is the first - The amount of reactants and the treatment pressure, including the number of the first reactants, and the second second parameter group: the number of the at least-constant parameters is the number of the second reactants and the processing group includes the first reaction Quantity, system; use of the target trim amount between the repair volume data and the variable The target is trimmed by the process of chemically treating the substrate by f exposure of the substrate to the substrate, and the target trimming amount is removed by the process of at least one constant parameter. Shift 1264079 In another embodiment of the present invention, a chemical oxide removal is proposed, which uses a process recipe to enforce the law, and includes a prescription for the target trimming of the features on the substrate. The trimming amount and the partial pressure of the gas species; the magnitude of the square pressure determined by using the relationship with the target trimming amount; and the target value of the partial pressure of the gas species On the substrate, the _ special = # (4) job substrate is exposed in the process recipe to the chemistry department, and then in the sample, proposed - in the chemical oxide removal system 1 ί ί ΐϋ target trim amount m contains: - Chemistry As the surface =, ΐ exposed in the process recipe to change the exposure on the substrate 曰ό 耘 耘 prescription has the first amount of treatment gas, the number of second treatment gas, the amount of inert gas and the time of exposure - Force; - the target trimming amount on the substrate , which comprises: - a chemical treatment system I, Laotian / -, , • eight it will f sj ms: to heat treat the chemical surface layer on the substrate; and - control the i-round system 'and use it - or more The second parameter of the constant parameter 'Γ海第—the parameter group contains the number of the first reactants, the number of the inert gases selected by the second anti-repository, and the processing pressure, and the constant parameters of the one or more Then, in the second parameter group, the group includes the number of the first reactants, the number of the second reactants, and the amount of the inert gas and the processing pressure. The free method is to prevent the method from being patterned. The paste contains a thin layer of photosensitive material (such as the upper surface of the two-two earth plate =, then patterned to set the spoon A during the (four) period) to the mask used for the next film. The photographic material is usually patterned = soil! 1 using a lithography system to expose the radiation source through the exposure mask (and the sub-component) of the photosensitive material, and then using a developing solvent to shift the irradiated region of the photosensitive material (as in the case of a positive photoresist) or Unradiated area (as in the case of negative photoresist). Additionally, a plurality of layers and a hard mask may be provided to etch features in the film. Example 1264079 Moves to the hard mask layer. And (4) two 1 = step 'to transfer the mask pattern in the photosensitive layer, the cover can be 4, for example, from the materials used in the treatment of the Si Xi compound, 祜 虱 S S (Sl 〇 2), tantalum nitride (& shame) with carbon and so on. It can be used (tTOmf is the feature size in the film, so for example, a two-step mask can be used to laterally trim the hard mask. The two-step process includes chemical treatment with hard masking (in order to change the hard mask layer). Surface chemistry) The exposed surface of the more favorable layer is post-treated (in order to release the chemical properties of the modified surface). At the point of view, the 施 表示 表示 表示 表示 表示 表示 表示 表示 表示 表示 表示 表示 表示 表示 表示 表示 表示 表示 表示 表示 表示 表示 表示 遮 遮 遮 遮 遮 遮 遮 遮 遮The processing system! Including - the first processing system 1G and the connection system 1 1 匕 糸 processing system, and the second processing system 20 can include a heat treatment 又 又 糸 糸 糸 糸 20 可 20 can include a substrate rinsing system, such as water washing system, 2, as shown in FIG. 1A, in order to transfer the substrate into and out of the first processing system 1 and the processing system 20, and exchange the substrate with the multi-component manufacturing system 4, a transfer & Connected to the first processing system 10. The first and second processing systems 1 , 20 and 20 may include processing elements, for example, within the multi-component manufacturing system 40. 2 multi-element fabrication system 40 can permit substrate transport to process the piece back and forth, and the element includes devices such as etching systems, deposition systems, coating systems, patterning systems, systems, and the like. In order to isolate the processes occurring in the first and second systems, the isolation component 50 is coupled to each system. For example, the isolation assembly 5 can include at least one of a thermally insulating component that provides insulation and a gate valve assembly that provides vacuum isolation. Of course, the processing systems 10, 20 and the delivery system 30 can be arranged in any order. Alternatively, in another embodiment, the graph represents a processing system 100 that processes a substrate using, for example, a mask layer trim. The processing system 100 includes a first processing system 110 and a second processing system 12A. For example, the first processing system 11() can include a chemical processing system, and the second processing system 120 can include a heat treatment system 1264079; or the system i2G can include a substrate processing system. f. As shown in Fig. 1B, in order to transfer the substrate into and out of the first place, the system can be connected to the processing system 130 in order to transfer the substrate into the output-processing line 12G. In addition, the transport system 13 can be combined with one or more of the younger brothers = two ' although in the (four) cap system, but the other uses the communication system 130 'includes, for example, the surname system, the deposition system, the measurement System and other devices. In order for the isolation to occur in the first process, an isolation component 15_ can be used to connect each system. To: In addition, this may include a thermally insulated component that provides insulation and a gate that provides vacuum isolation. Additionally, for example, transporting pure 13G may be part of the isolation assembly 150. Alternatively, in another embodiment, Fig. 1C shows a processing system for processing a substrate using, for example, occlusion. The processing system _ 】 Γ = = the first production system 62 °, where the first processing system = 61 Xiaoyi chemical processing system, and the second processing system = package j example. Alternatively, the second processing system 620 can include a substrate rinsing system, (iv) in another as shown in FIG. 51 1C, in order to transfer the substrate into and out of the first processing system, the transfer system 630 can be coupled to the first processing system 610; And in order to connect the "second processing system, system 620" to the second system, the transmission system 630 can be coupled to one or more substrates (not shown). Li Green® 1C touch-processing system 'but other processing systems are patterned' including devices such as side secrets, deposition systems, coating systems, internal systems, and systems. For isolation, the first and the third The second system uses the isolation component to connect each system. For example, the gate valve phase H can include one of the thermal insulation components that provide insulation and provide vacuum isolation. In addition, for example, the thin 630 can be used as an isolation group. 1264079 Generally, at least one of the first processing system 1 and the second processing system 20 in the processing system 1 as depicted in FIG. 1A includes at least two transfer openings to allow the substrate to pass therethrough. For example, as shown in FIG. 1Α, second The system 2 includes two transfer openings that allow the substrate to pass between the second processing system 2 and the transfer system 30, and the second transfer opening allows the substrate to be between the first processing system and the second processing system However, with respect to the processing system i〇Q shown in FIG. 1A and the processing system 600 shown in FIG. 1, each of the processing systems 110, 120 and 610, 620 respectively includes at least one transfer opening to allow the substrate to pass therethrough.

Referring now to Figure 2, there is shown a processing system 200 that performs chemical processing and heat treatment of a substrate. The processing system 200 includes a chemical processing system 21 and a heat treatment system 220 coupled to the chemical processing system 210. The chemical processing system 2'1 includes a temperature-controlled chemical processing chamber 211, and the heat treatment system 220 includes A temperature controlled heat treatment chamber 221. The chemical processing chamber 211 and the heat treatment chamber 221 are thermally insulated from each other by the use of a thermal insulation module 230, and the chemical processing chamber 211 and the heat treatment chamber 221 are vacuum-isolated from each other by the use of a gate valve assembly 2 The following will be described in more detail. As shown in j 2 and 3, the chemical processing system 21 () further includes: a temperature control substrate holder 240 is assembled to substantially thermally insulate the red support substrate 242 from the chemical processing chamber 211, a vacuum pump system, 250, It is connected to the chemical processing chamber 211 to evacuate the chemistry 2? 2, 5: 12: the gas distribution system 26 〇 ' is used to introduce the processing gas into the processing space 262 within the chemical treatment 211. As illustrated in Figures 2 and 5, the heat treatment system 2 bracket 270 is placed in the heat treatment chamber 221 to handle the chamber chaos and m farming i9f: system =, used to evacuate the thermal lifting assembly 290 can be raised in -2 And (W), W., (line only) and the substrate holder 270 (dashed line) vertically transfer the substrate 242 ' or transfer at 221 may include - the upper component _. The heat treatment to another, the chemical treatment chamber 21 heat treatment chamber 221 and the thermal insulation assembly 23 〇 8 11 1264079 universal opening 294, the substrate can be transmitted through the universal opening 294. During the processing period, in order to let the two Since the processing chambers 211 and 221 are independently processed, the common opening 294 can be sealed by using the gate member f%. Further, in order to allow the substrate to be exchanged by the scooping system as shown in FIG. 1A, the heat treatment chamber 221 can be used. A transfer H98 is provided in the inside. For example, a second thermal insulation component 228 can be installed to thermally insulate the heat treatment chamber 221 ^ delivery system (not shown), although the opening Mg is divided into heat treatment chambers. For illustration (with Figure 1A), but the delivery opening 29 8 may be disposed within the chemistry 211 rather than the heat treatment to 221 (as opposed to the processing chamber as shown in FIG. 1A or the delivery opening 298 is disposed simultaneously in both the chemical processing chamber 211 and the thermal processing chamber 221 (see FIGS. 1B and 1C). As shown in FIGS. 2 and 3, in order to provide the functions of thermal control and processing of the substrate 242, the chemical processing system 210 includes a substrate holder 24 and a substrate assembly 244. In order to clamp the substrate 242 to the substrate support 240 by electric power (or mechanical force), the substrate support 240 and the substrate support assembly 244 may include a right-hand static clamp system (or a mechanical clamp system). The support 240^g includes a cooling system with a recirculating refrigerant flow. The recirculating cold weave receives thermal energy from the base anti-bracket 240 and transfers the thermal energy to a heat exchange system (not shown). The heat transfer from the heat exchange system is transferred. In addition, the heat transfer gas can be transported to the back side of the substrate 242 through, for example, a side gas system to modify the gas gap thermal conductivity between the substrate 242 and the board support 240. Gas can be packaged, such as ^ Gas, argon, helium, helium, gas, 'the treatment of the body, or other gases such as oxygen, nitrogen or hydrogen. When the temperature rises or falls and the temperature control of the substrate is required, that is, the back The side gas system may comprise, for example, a two-zone (central multi-zone gas distribution system in which the backside gas gap pressure may vary independently between the center and the edge of the substrate 242. In other solids wipes, such as repair heating elements or thermoelectric heating The heating/cooling element of the cooler/cooler is contained in the substrate holder 24 and the chamber wall of the chemical processing chamber 211. For example, Figure 7 shows a temperature 12 1264079 5 second board for performing several of the functions specified above. ^^fine. The substrate holder can include a temperature control element 314 that is coupled to the underside of the chemical processing chamber 211, the target element (10), and the insulating element 312 of the chamber element 31G. The chamber matching component and _ =, 314 can be made of a heat conductive material such as Ming, stainless steel, nickel, etc. iTi"! 312 can be made of a heat-resistant material such as quartz, oxidized, Teflon, etc. having extremely low conductivity. to make. ...,

The temperature control element 314 can include temperature control elements such as cooling channels, heating channels, heat resistant components, and the like. For example, as described in κ 7, the temperature control element 犯3 has a refrigerant inlet 32 and a refrigerant outlet 32 of a refrigerant outlet 324. To provide conduction convection cooling of the temperature control element 314, the refrigerant passage 32() can be a spiral passage located within the temperature controlled 7L member 314, which can tolerate refrigerant flow rates such as water, Flu〇rinert, GaldenHT-135, etc. . Alternatively, the temperature control element 314 may comprise an array of electrical components "f" capable of heating or illuminating the substrate according to the direction of current flowing through the individual components. The exemplary thermoelectric component is a commercial product model of Advanced Thermoelectric ST-127-1.4-8.5 M (40mm X 40mm X 3. 4mm thermoelectric device with a maximum heat transfer power of 72 watts). In addition, the substrate holder 300 may further include an electrostatic clamp (ESC) 328 including a ceramic layer 330, a clamp electrode 332 interposed therebetween, and a high voltage connected to the clamp electrode 332 by an electrical connection. HV) DC voltage supply 334. ESC 328 can be, for example, monopolar or bipolar. This type of clamp design and installation is known to those skilled in the art of electrostatic clamp systems. In addition, the substrate holder 300 may further include a back side gas supply system 34〇 for transmitting heat to the gas (for example, containing helium or argon gas) through at least one gas supply line 342 and at least one of the plurality of openings and channels. , helium, helium inert gas) First, the processing gas, or other gases (such as oxygen, nitrogen or hydrogen), supplied to the back side of the substrate 242. The backside gas supply system 340 can be a multi-zone gas supply system such as a two-zone (central-edge) system in which the backside pressure can vary radially from center to edge. In order to provide additional thermal insulation between the temperature control element 314 and the lower matching element 310, the insulating element 312 may further comprise - thermal insulation _ 35 。. In order to change the 250 ® system (not shown) or vacuum line to evacuate the thermal insulation gap 35 〇. The gas supply system can be, for example, used to connect the heat transfer gas to the base gas supply system 340. In order to allow the substrate 242 to be vertically transported back and forth to and from the upper surface of the substrate holder 300 in the processing system and a transport plane, the mating component 31 can further include a lift pin assembly 360 capable of lifting up and down three or more lift pins 362.

In order to secure one component to another and to secure the substrate holder 3 to the chemical processing chamber 211, each of the components 310, 312 and 314 further includes fastening means (such as bolts and tapped holes). Moreover, elements 31A, and 314 facilitate the passage of the above components to individual components, while utilizing a vacuum seal such as a resilient O-ring when it is desired to maintain the vacuum integrity of the processing system. The temperature of the temperature controlled substrate holder 24 can be monitored using a temperature sensing device 344 such as a thermocouple (e.g., a K-type thermocouple, a platinum sensor, etc.). Moreover, to control the temperature of the substrate holder 240, the controller can feed back to the substrate holder assembly 244 using temperature measurements. For example, in order to change the temperature of the substrate holder 24 and/or the temperature of the substrate 42, the fluid flow rate, fluid temperature, heat transfer gas type, heat transfer gas pressure, clamping force, and resistive heater element current can be adjusted. Or at least one of voltage, current or polarity of the thermoelectric device. μ Referring again to Figures 2 and 3, the chemical processing system 210 includes a gas distribution system 260. In the embodiment shown in FIG. 8, a gas distribution system includes a showerhead gas injection system having a gas gas distribution assembly 402 coupled to a gas distribution assembly 402 and assembled to form a gas distribution plenum 406. Board 4〇4. Although not shown, the gas distribution plenum 406 can include one or more gas distribution jaws. The gas distribution plate 404 further includes one or more gas distribution holes 4〇8 for distributing the process gas from the gas distribution plenum 406 to the process space within the chemical processing chamber 211. In addition, in order to supply a process gas containing one or more gases, one or more gas supply lines 41, 410, etc. may be connected, for example, by a gas distribution assembly, 14 1264079, gas, $, 406, and The process gas may include, for example, ammonia, hydrogen fluoride, hydrogen, oxygen, carbon monoxide, carbon dioxide, argon, helium, and the like. In another embodiment, as shown in Figures 9A and 9B (enlarged view of Figure 9A), a gas distribution system 42A for dividing a process gas comprising at least two gases, comprising: a gas distribution assembly 422, One or more elements 424, 426 and 428; a first gas distribution plate 430 coupled to the gas distribution assembly 422 and assembled to connect a first gas body to the processing space of the processing chamber 211; The two gas distribution plates are 2' connected to the first gas distribution plate 43 and assembled to connect a second gas to the processing space. When the first gas distribution plate 430 is connected to the gas component, the component 422, a first gas distribution plenum 440 is formed; further, when the second gas distribution plate 432 is connected to the first gas distribution plate 430, The -th gas distribution inflator 442 is formed. Although not shown, the gas distribution plenums 44A, _ 442 may include one or more gas distribution baffles. The second gas distribution plate 432 may further include a first array 444 of one or more openings and a second array of one or more openings, wherein the first array is connected to the first gas distribution plate. One or more of the arrays of gamma 446 are compliant with each other. - or a plurality of first arrays of open cells - an array 446 of one or more channels for distributing the first gas from the first gas to the gas, and the portion 44 to the processing space of the chemical processing chamber g11 . And one or more second _ 448 ribs distribute the second gas from the second gas distribution plenum to the processing space of the chemical processing chamber 211. The treatment gas may include, for example, ammonia, hydrogen, hydrogen, oxygen, carbon monoxide, carbon dioxide, argon, helium, etc. • Due to this arrangement, the first gas and the second gas may be treated without interaction. Workplaces will not interact until they enter the processing space. For example, the first gas may be connected to the first gas distribution inflator 44 via the gas distribution channel 422; for example, 1 GB, the second gas may be (4) The second gas distribution plenum is connected to the second gas distribution plenum in the gas distribution assembly. Referring to Figures 2 and 3, the chemical treatment system 21 further includes a tweezers-controlled chemical processing chamber 211 maintained in a warmed state. For example, the chamber wall heating element 266 can connect 8 15 1264079 to the chamber wall temperature control unit 268 and can assemble the chamber wall heating element 266 to connect to the chemical processing chamber 211. The heating element may, for example, comprise a resistive heater element such as a tungsten wire, a nickel-iron alloy wire, an aluminum-iron alloy wire, an aluminum nitride wire or the like. Examples of commercial materials used to make resistive heating elements include metal alloys registered under the trade names Kanthal', Nikrothal, Akrothal, etc., all produced by Kanthal Corporation of Bethel, CT. The Kanthal family contains ferrous alloys (FeCrA1), and the Nlkrothal family contains austenitic alloys (Nicr, NiCrFe). When current flows through the filament, the power is dissipated as thermal energy, so the chamber wall temperature control unit 268 can, for example, include a controllable DC power source. For example, the chamber wall heating element 266 can include at least one Firerod cartridge heater, which is a commercial product of the Wa1:i〇w (i3l® KingslandDr., Batavia, IL, 60510) company. It is also possible to use the components in the chemical processing chamber 211. The /JHL degree of the chemical processing chamber 211 can be monitored using a temperature sensing device such as a thermocouple (e.g., a κ type thermocouple, a platinum sensor, etc.). Furthermore, to control the temperature of the chemical processing chamber 211, the controller can feed back to the chamber wall temperature control unit 268 using a • temperature measurement. Referring again to Figure 3, the chemical processing system 210 can further include a temperature controlled gas distribution system 260 that can be maintained at any selected temperature. For example, a gas distribution heating element 267 can be coupled to a gas distribution system temperature control unit 269 and the gas distribution heating element 267 can be assembled to connect to the gas distribution system 26A. The heating element may, for example, comprise a resistive heating element such as a tungsten wire, a nichrome wire, an aluminum-iron alloy wire, a nitrogen wire, an aluminum wire or the like. Examples of commercial materials used to make resistive heating elements include metal alloys registered under the trade names Kanthal, Nikrothal, Akrothal, etc., all produced by Kanthal Corporation of Bethel, CT. The Kanthal family contains iron alloys (FeCrAl), while the Nikrothal family contains Vostian alloys (NiCr, NiCrFe). When the electric current flows through the filament, the power is dissipated as heat energy, so the gas system temperature control unit 269 can include, for example, a controllable DC power source. For example, the gas distribution heating element 267 can comprise a dual zone polyoxyethylene rubber heater (about 1 mm thick) having a power of about 0 (/ (or a power density of about 5 W/in). Using, for example, a thermocouple ( Temperature sensing device such as κ type thermocouple, platinum sensor, etc.);]: Monitoring 8 16 1264079 In addition, in order to control the gas distribution system 260 叩Γ ^ can use temperature measurement _ to gas distribution The gas distribution system of the temperature control unit back to 10B can also accommodate a temperature control system. Alternatively, the cooling element can be used in any embodiment. 4 Referring again to Figures 2 and 3, the true "Pu Chun 25Q can contain - True = 'with a valve condition used to adjust the chamber pressure. Vacuum pump can be included, for example, up to liters (fine) - hybrid vacuum pump T / w II said 'sound can be New Zealand STP - fine True, or this W vacuum pump. TMP is typically low pressure treatment for less than 5 〇 rainbow steps and for high pressure (ie greater than about 100 mT 〇rr) or low production (secondary flow) In other words, you can use mechanical pressure pump and dry low straight air to refer to @ 3 again. The processing system 21G may further include a controller 229 having a microprocessor, and a digital 1/0槔, and the controller 229 is capable of generating enough input to the chemistry unit (T) 210 and monitoring from the chemical processing system. The control voltage of the output of 210 (such as temperature and pressure sensing device). This 33 is 5 connected to the substrate holder assembly 244, the gas distribution system 26, the real table pump system 250, the gate valve assembly 296, the chamber wall temperature control The unit 268 is associated with the gas distribution vehicle, the control unit 269, and the above devices. For example, the program stored in the body can be used to initiate input to the chemical processing system 21〇= according to a processing prescription. The commercialization product DELL pRECIS W0RKSTATI0N _TM at the Texas company in Texas is a controller 229. In one case, Figure 4 shows a chemical processing system 21〇, which further includes a handle 213 At least one buckle 214 and at least one hinge 217 above the 二212 two optical viewing apertures 215; and at least one pressure sensing device 216. 1 , as described in Figures 2 and 5, the thermal processing system 220 can further include The substrate holder 270 is temperature-controlled. The substrate holder 270 includes a base 272 which is insulated from the heat treatment chamber 221 by an insulating layer. For example, the substrate holder can be made from Ming, stainless steel or nickel temple. 270, and the insulating layer 274 can be made from an 8 17 1264079 thermal insulator such as Teflon, alumina, quartz, etc. The substrate holder 270 can further include a heating element 276 embedded therein and - and The substrate holder temperature control unit connected to the substrate holder 270 is 278. Heating element 276 can, for example, comprise a resistive heater element such as a tungsten wire, an f-chromium wire, an aluminum-iron alloy wire, an aluminum nitride wire, or the like. Commercially available materials used to make resistive heating elements include metal alloys registered under the trade names Kanthal, 1 rothal, Akrothal, etc., all produced by -anthal, located in Bethel, CT. The Kanthal family contains ferroalloys (FeCrAi), and the Nikrothal family contains Vostian alloys (NiCr, NiCrFe). When the current flows through, and the wire is dissipated, the power is dissipated in the form of thermal energy. Therefore, the substrate holder temperature control unit 278 can include a controllable DC power source. Alternatively, the temperature-controlled substrate holder can be a commercial cast-in heater of at least 100 () Kingsland Dr., Batavia, IL, 6G51G), with a maximum operating temperature of about sen to 45. 〇〇c ; ^ The same as Watlow's commercial film heater, which contains aluminum nitride material, operating temperature up to 300 ° C and power density up to about 23W / cm2. Alternatively, the cooling element can be incorporated into the substrate holder 270. By using a temperature sensing device such as a thermocouple (for example, a K-type thermocouple), it is possible to monitor the temperature of the base 270; further, in order to control the temperature of the substrate holder 27, the system can measure the temperature. Feedback to the substrate holder temperature control unit 278. In addition, the substrate temperature can be monitored by a temperature sensing device, such as the Advanced Spring nergies Inc. (1625 Sharp Point Drive, Fort Collins, CO, 80525) model 〇R2〇〇〇F commercial product, the measurement range is up to 2 Hey.且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 约为 约为 约为 约为 约为 约为 约为 约为 约为 约为Measurement system. 1. Referring again to Figure 5, the heat treatment system 220 further includes a two temperature controlled heat treatment chamber 221 maintained at a selected temperature. For example, a hot wall heating element 283 can be coupled to a wall temperature control unit 281 and the hot wall heating element 283 can be assembled to connect to the heat treatment chamber 221. The heating element may, for example, comprise a resistive heater element such as a tungsten wire, a nickel-chromium wire, an aluminum-iron alloy wire, an aluminum nitride wire or the like. Commercially available materials used to make resistive heating elements 8 18 1264079 include metal alloys registered under the trade names Kanthal, Nikrothal, Akrothal, etc., all produced by Kanthal Corporation of Bethel, CT. The Kanthal family contains ferroalloys (FecrAl) and the Nikrothal family contains Vostian alloys (NiCr, NiCrFe). When current flows through the filament, the power is dissipated as thermal energy, so the hot wall temperature control unit 281 can, for example, include a controllable DC power source. For example, the hot wall heating element 283 can comprise a Firerod cassette heater, which is a commercial product of the Watlow (1310 Kingsland Dr., Batavia, IL, 60510) company. Alternatively, or in addition, a cooling element can be used in the heat treatment chamber 221. The temperature of the heat treatment chamber 221 can be monitored by a temperature sensing device such as a thermocouple (e.g., a K-type thermocouple, a platinum sensor, etc.). Furthermore, in order to control the temperature of the heat treatment chamber 221, the controller can feed back to the hot wall temperature control unit 281 using the temperature measurement. Referring again to Figures 2 and 5, the heat treatment system 220 further includes an upper assembly 284. The upper assembly 284 can, for example, comprise a gas injection system for passing purge gas, process gas or cleaning gas into the heat treatment chamber 221; or the heat treatment chamber 221 can enclose a gas injection system separate from the upper assembly, for example The purge gas, the process gas or the cleaning gas can be introduced into the process chamber 4 through the side wall of the heat treatment chamber 221. The heat treatment system 220 can further include an upper cover having at least one hinge, a handle and a buckle for latching the upper cover in a closed position. In the other two embodiments, the upper assembly 284 can include, for example, an array of halogen lamps, radiation, and, for heating the substrate lifting assembly 29, resting above the blade 5 (see white = anti-242). In this case, the substrate holder may not be included in the heat treatment ΖΖ 1 τ. Referring again to Figure 5, the heat treatment system 220 may further comprise a selectable 2-control upper assembly 284. For example, the upper assembly may be twisted. Yuan ί : iff Γ upper component temperature control single ★ 286, and can add the upper component to the ί ί 上 。 。. The heating element can include, for example, 4 ί, pieces, _ alloy wire, nitrided Mingsi, etc. - Commercialized materials for resistive 敎 敎 俨 俨 加热 加热 加热 加热 包含 包含 包含 包含 包含 包含 K K K K K K K K K K K K K K K K K K K K K K K K K K K K K K K K K K K K K K K K K K K Kanthal family alloy (FeGrAl), NikiOthal family contains Worthite alloy ^ ”

NiCrFe). When current flows through the filament, the power can dissipate as thermal energy, since the component temperature control unit 286 can, for example, include a controllable DC power source. ,: The component heating element 285 may comprise a power of about 14 _ (or a power density of about - a two-zone oxy oxygen rubber heating | | (about 丨 wire thickness). _ such as a K-type thermocouple, a platinum sensor, etc.) The temperature sensing device can monitor the temperature of the component 284. Moreover, in order to control the temperature of the upper component sink 4, it can be fed back to the upper component temperature control unit 286 by using a temperature system. = ^ Additional or additional cooling element. Thousand

Referring to Figures 2 and 5, the heat treatment system 220 further includes a substrate lifting assembly 2. The substrate lifting assembly is assembled to lower a substrate 242 to the upper surface of the substrate holder 27 while a substrate 242" is removed from the substrate holder 27. The upper surface of the crucible is raised to a support plate or a transfer plate therebetween. The transfer plate can be used to transfer the substrate 242" to a transfer system for transferring the substrate into and out of the chemical and thermal chamber. 211, 221. At the support plate, the substrate 242 is allowed to cool, and the other substrate is exchanged between the transfer system and the chemical and thermal processing chambers 211, 221. As shown, the substrate lifting assembly 290 includes a blade 500; wherein the blade 5 has three or more tabs 510 for connecting the substrate lifting assembly 290 to the heat treatment chamber 221 ^ flange 520, and the permissible blade 5 A drive system 530 that is vertically transported within the thermal processing chamber 221. The tab 510 is a substrate 242 that is assembled to grip in the raised position and forms a recess in the receiving aperture 540 formed in the substrate holder 270 in the lowered position. The drive system 530 can be, for example, a pneumatic drive system designed to meet various specifications including cylinder stroke length, cylinder stroke speed, position accuracy, non-rotation accuracy, etc., and is designed to be familiar with pneumatic actuation. Those skilled in the art of system design are well known. Referring again to Figures 2 and 5, the heat treatment system 220 further includes a vacuum pump system 280. Vacuum pump system 280 can, for example, include a vacuum pump, with a regulating valve such as a gate valve or a butterfly valve. The vacuum pump may, for example, comprise a thirsty wheel molecular vacuum pump (TMp) with a pumping speed of up to 5 liters per second 8 20 1264079 (and above). TMp is quite useful for low pressure processing, which is typically less than mTorr, and for high pressure (i.e., greater than about work, there is no doubt that Wei used two mechanical plus again with reference to Figure 5, heat treatment system 2 2 〇 can be more included - has one Microcontrol the crying, memory and digital I/O controller 275, and the controller can control the voltage of the output (such as temperature and pressure sensing device). This = air 275 connection To the substrate holder temperature control unit (10), the upper component temperature control unit Π, the upper miscellaneous piece 284, the hot wall temperature control unit 28, the vacuum pump system, the unified disk base and exchange information with the above devices. For example, according to The prescription is stored, and the program stored in the memory can be used to initiate the input to the component. The manufacturer of the Texas-based Alpha Corporation cuts the CIS face KSTATI0N 61〇TM, which is the controller 275. In one embodiment, the controllers 229 and 275 can be the same controller. In one example, FIG. 6 shows a heat treatment system 22, 1 further comprising a handle 223 and an upper cover 222 of the at least one hinge 224, One & observation observation hole = = = - pressure sensing The device 226. In addition, in order to identify whether the substrate is disposed in the support surface, the heat treatment system 220 further includes a substrate detection system 227; the substrate detection system may include, for example, a Keyence digital laser sensor. 13 and 14 respectively depict a side view, a top view and a side cross-sectional view of the thermal insulation assembly 230. Similar components may also be used as the thermal insulation component 5 (), and the 156 rim 230 may include a dielectric panel 231 and an insulating plate I. The "panel 231" is connected to the chemical processing chamber 211 as shown in FIG. 12 and assembled to form a point between the heat treatment chamber 221 (see FIG. 14) and the chemical processing chamber 211; and the insulating plate 232 is connected to the interface panel. 231, and assembled to reduce thermal contact between the thermal processing chamber 221 and the chemical processing chamber 211. Again, in Figure 12, the dielectric panel 231 includes - or more structural contact members 233, wherein the structural contact members 233 have - The mating surface 21 1264079 234 for connecting with the mating surface on the heat treatment chamber 221 is formed to form a hard joint between the two processing chambers 211, 221, so that the interface panel 231 can be made of metal such as As for the insulation board, it can be used, for example. Iron, dragon, oxidized! s,; 5 inches of low thermal conductivity materials. In Nana N 】 12 曰 application, the invention name is "adjacent temperature control room thermal insulation method and design", application The ferrule assembly is described in more detail in U.S. Patent Application Serial No. 1/7,5,397, the entire disclosure of which is incorporated herein by reference. The gate valve 297 is vertically mobilized by the gate valve and the member 296. The gate valve assembly 2% can further include a gate

Fj, the plate 239 is provided, and the gate valve adapter plate 239 provides a vacuum seal with the dielectric panel 231 and provides a seal with the gate valve 297. 211, 221 may be terminated with - or more alignment devices 235 and terminated in one or more = normal ms' (as shown in Figure 6), and extended through the first location = (e.g., chemical processing chamber 211) The convex, the edge 237 and in the second processing chamber (for example, the heat, the chamber 221) - or more, the internal termination (as shown in Figure 6) (^ screw hole} one or more A plurality of fastening devices 236 (i.e., bolts) are connected to each other. As shown in Fig. 14, for example, an elastomeric ring-shaped ring gasket is used, which can be used in the insulating plate 232, the dielectric plate 231, the gate valve adapter plate 239, and the chemical treatment. A direct seal is formed between the chambers 211 and a vacuum seal is formed through the serpentine seal 238. One of the components including the chemical treatment chamber 211 and the heat treatment chamber 221 Or a surface may be coated with a protective barrier layer, and the protective barrier layer may include at least one of DuPont Kapt〇n imine, Teflon, surface anodization, such as oxidation | g and oxygen coating, plasma electrolytic oxidation, and the like. U. Fig. 15 shows the operation of the process f 200 including the chemical treatment system 21 and the heat treatment system 22〇. The flow chart is started by step 81, wherein a substrate is transferred to the chemical processing system 21 using a substrate transfer system. The substrate is received by a lift pin located in the substrate holder, and the substrate is lowered to the base frame. Thereafter, the substrate holder is mounted using a clamp system such as an electrostatic clamp system, and then a heat transfer gas is supplied to the back side of the substrate. 22 1264079 ^ At step 820, the required chemical processing for the substrate is set. One or more chemical processing parameters. For example, one or more chemical processing parameters include at least one chemical processing pressure, one chemical processing wall temperature, one chemically treated substrate holder temperature, one chemically treated substrate temperature, and one chemical processing gas distribution. System temperature and a chemical department = in -. For example, more than one of the following conditions may occur; raw to the chamber wall temperature control unit and the first temperature sensing device controller to set the chemical, chamber chemistry Processing chamber temperature; 2) setting the chemical processing gas of the chemical processing chamber by using a controller connected to the gas distribution system temperature control unit and the second temperature sensing device Body distribution system temperature; 3) using a controller connected to at least one of the temperature control element and the third temperature sensing device to set the temperature of the chemical processing substrate holder; 4) utilizing the connection to the temperature control element, the back side gas supply system and At least one of the clamping system and a controller of the fourth temperature sensing device in the substrate holder to set the temperature of the chemical processing substrate; 5) utilizing at least one of the vacuum pumping system and the gas distribution system and the pressure sense a controller of the measuring device to set a processing pressure within the chemical processing chamber; and/or 6) setting a mass of one or more process gases using a controller coupled to one or more mass flow controllers within the gas distribution system flow. At step 830, the substrate is subjected to chemical treatment for a first period of time under the conditions described in step 820; for example, the first period of time may fall within the range of about 1 () to about seconds. Where at step 840, the substrate is transferred from the chemical processing chamber to the thermal processing chamber. During this time, the clamp of the substrate is removed and the flow of heat transfer gas on the back side of the substrate is interrupted. The substrate is lifted vertically from the substrate holder to the transfer plane using a lift pin assembly located within the substrate holder. The conveyor system receives the substrate from the lift pins and places the substrate in the heat treatment system. Here, the substrate lifting assembly receives the substrate from the transport system and then lowers the substrate to the substrate holder. At step 850, the heat treatment parameters for the substrate heat treatment are set. For example, the one or more heat treatment mics comprise at least one of a heat treatment wall temperature, a heat treatment upper component temperature, a heat treated substrate temperature, a heat treated substrate support temperature, and a heat treatment pressure. For example, more than one of the following may occur: (S) 23 1264079 The heat treatment wall temperature is set by a controller connected to the hot wall zm control unit and the first temperature sensing device located in the heat treatment chamber; 2) The heat treatment upper group temperature is set by using a controller connected to the upper component temperature control unit and the second temperature sensing device in the upper component; 3) connecting to the substrate holder temperature control unit and the second in the heated substrate holder The temperature control device controls n to set the heat treatment substrate holder temperature; 4) sets the heat treatment substrate temperature by using the fourth temperature sensing-measuring and substrate controller connected to the substrate holder temperature control unit and the heated substrate holder And/or 5) using a controller connected to the vacuum pump system, the gas distribution system and the pressure sensing device, to set the heat treatment pressure in the heat treatment chamber. At step 860, the substrate is in step, and the heat is received under the conditions of the household.

Hold, the second time. For example, the second period of time may fall within the range of about 1 〇 to about. V In the case, the processing secret as depicted in Figure 2 is the seed removal system. The treatment system _ contains the chemical treatment of the surface of the exposed surface layer (such as the oxide surface layer) on the chemical treatment substrate, which affects the chemical layer of the surface layer. The 〇, degree is increased, and the chemically modified λ 匕Ϊ processing system 210 on the 峨 (or New) substrate is first evacuated to the processing space 262 (see FIG. 2).

The first processing gas of hydrogen and the second processing gas such as ammonia may further comprise a carrier gas. The carrier gas may, for example, comprise an inert gas of i τ3, Wei. As for the treatment pressure, it can fall within the range of 1 to ιοί mTojr, for example, it can fall within the range of about 2 to about the penalty, and the body is in the range of about 1 to _ of each species, for example, can be dropped, 1U to, in the range of 100 sccm. In addition, the chemical treatment chamber 211 can be heated to about 10. The crucible falls within the range of about 35 ° C to about 5. The other two will be heated by the chaotic knife. A temperature range of from about 赃 to about C. 24 1264079 The temperature can be in the range of from about 4 G ° C to about 6 ° C. The substrate can be rotated in a temperature range of about 50 ° C, such as temperature. It may fall within the range of about 25. 〇 to about 3 〇r. In the heat treatment system 220, the heat treatment chamber 221 may be heated to a temperature ranging from about 耽 to about 200 ° C, for example, to about the muscle to about In the immediate temperature range, in addition, the upper assembly can be heated to about 2 (rc to about 2 〇〇. 〇 about hunger to about. The boot of the fan (four); the substrate can be heated In the temperature range of more than 00C to about 200C, for example, it may fall within a temperature range of about 1 〇〇〇c to about 150 C. As described above, the first and second hydrogen hydrazine used in the chemical treatment system 21 〇 Gas: Using the piece p depicted in Figures 9Α, 9β, 1〇A, and (10), the first process gas, hydrogen fluoride, can be conflated with the second process gas, and the processing space in the processing system can be used. The treatment gas is fed to the treatment space and passed into the treatment space as a gas mixture. Figure 6 is a trimming amount of nanometers as a function of the molar fraction of (tear) T hydrogen at a treatment pressure of 15 rnTorr; The ratio of the number of moles of hydrogen to the total number of moles of process gas.'

It corresponds to the flow rate of hydrogen fluoride, the flow rate of ammonia gas, the production of iL in the processing space, the temperature of the substrate holder in the system 210, and the temperature of the chemical processing chamber. For example, when the ratio of hydrogen fluoride gas is from fluorination to fluorination, only hydrogen fluoride is introduced. As shown in Fig. 16, the ugly second 虱 虱 氧 氧 为 为 。 。 。 。 。 。 。 。 。. In addition, the following equation (solid line) has a y-yield (ι-X)(1) as a table trimming amount, X represents a hydrogen fluoride gas, and A is a constant. In H, it means the predicted 95% confidence and limit. Although = the ratio of the amount of trimming to the gas (mole) of the process gas (or the molar fraction of 6 = 2 25 1264079, the amount of process gas can include the mass turbulence rate, the first - and the second treatment Gas between gases (than the 'rate, — or the gas between the second process gas and the inert gas (mass or mole) 1), and the other person's 'mesh 17' for the treatment pressure of about 1〇mT〇rr (grass ^ gas * body = or ^: ϊ rate) of the function of the trim; chemical representation), again, the trimming material can be fitted with the equation _ +, recognized = equation represented by equation (1). (1) to fit as shown in Figures 16 and 17; the effect of the material is proportional to the hydrogen fluoride gas ratio and ammonia gas y = Ax (lx) = Ba (HF) a (NHs) (2) where a (HF) represents the molar hydrogen fluoride gas ratio (or molar fraction), represents the molar ammonia gas ratio (or molar fraction), and B is a constant. Alternatively, it can be rewritten as (2) Contains the species that exist in the chemical process. You are like: y-Ax(lx)-BF2p(HF)p(NH3) (3) where p(HF) represents the hydrogen fluoride partial pressure and p(NH3) represents Ammonia partial pressure, p represents treatment pressure And B is a constant. The partial pressure of each species is expressed as, p(HF)={n(HF)/[n(HF)+n(NH3)]}P (4a) p(NH3)={n (NH3)/[n(HF)+n(NH3)]}P (4b) p(HFH(m(HF)/丽(HF))/[m(HF)/MW(HF)+m(hop) /MW(NH3)]}P (4c) 26 1264079 P(NH3):{(in(NH3)/MW(NH3))/[m(HF)/MW(HF)+m(NH3)/MW(NH3 )]}P(4d) where n(HF) represents the hydrogen fluoride molar number, m(HF) represents the hydrogen fluoride mass, 丽 (ie) represents the molecular weight of cesium fluoride, n(NH3) represents the mole number of ammonia gas, m(NH3 ) represents the mass of ammonia, MW (NH3) represents the molecular weight of ammonia, and the treatment pressure P is the sum of partial pressures, that is, P two (p) (HF) + p (NH3) (4e) when simultaneously introduced into the inertia such as argon In the case of gas, the equations (4a-d) become XXI/ ΛΙ/ ab C 5 5 5 Γν Γχ Γν

p(HF)={n(HF)/[n(HF)+n(NH3)+n(Ar)]}P p(NH3)={n(NH3)/[n(HF)+n(NH3) +n(Ar)] }P p(Ar)-{n(Ar)/ [n(HF)+n(NH3)+n(Ar) ] }P p(HF)={(m(HF)/MW (HF))/[m(HF)/MW(HF)+m(NH3)/MW(leg)+m(Ar)/MW(Ar)]}P (5d) p(NH3H(m(NH3)/ MW(NH3))/[m(HF)/MW(HF)+m(NH3)/MW(NH3)+ m(Ar)/MW(Ar)]}P (5e) p(Ar):{(m (Ar)/MW(Ar))/[m(HF)/MW(HF)+m(NH3)/MW(NH3)+m(

Ar) / MW (Ar)]} P (5f) where n (Ar) represents the argon molar number, m (Ar) represents the argon mass, MW (Ar) represents the argon molecular weight, and the treatment pressure is equal to P = p (HF)+p(NH3)+p(Ar) (5g) Note: In the above equations, any mass m can be replaced by the corresponding mass flow, and any mole number η can be obtained by the molar flow. To replace. 27 8 1264079 Using the above equations', it is possible to deduce the formula or formula for setting the parameters of the process recipe in the chemical oxide removal process; the t-course prescription contains the flow and treatment pressure of two or more species. For example, the chemical oxide removal process recipe includes a first reactant reactant lion flow, a second reactant species flow f and a 5 pressure. By way of example, the process recipe contains the flow of the first-reactive species, the flow of the species, the flow of the inert gas, and the processing pressure. In the front i kind of ί; ί should? The flow rate of the second reactant clock is the flow rate of the hydrogen. In the latter case, the first reactant reactant 氢 hydrogen flow rate, the second reactant material _ flow rate may be in the ammonia gas flow, and the t-shaped rolling body flow rate may be the argon gas flow rate. When at least one constant parameter is maintained fixed, the process mode Si is repaired, and the result is determined by the chemical method and the /1 fitting method: '· or the process recipe contains two The number of reactions, the case t of the force, can be accompanied by two constant parameters; ^ go, treatment pressure: === such as the first - treatment gas * or the reactants of the force. Give "say r' variable; the amount of gas, etc.) and handle the ear fraction, the quality of any species!, the Mo=number of any species, the constant parameter can contain any species number parameter and can be any species of Moer Number or mass of any species ^1, mass flow of any species, then ' 尔 目 目 目 目 (10), that is, using the process 28 1264079 杈 来 疋 疋 疋 。 。 。 。 。 。 。 。 。 。 。 。 。 。 Values and one or more constant reductions, which can contain two species and the formula 4 (a, b, e) or 4 (c, d, e) of the miscellaneous prescription, and contain three species and a treatment pressure The equation 5 (=-c, g) or 5 (df, g) of the process recipe is used to determine the remaining parameters. Referring now to Figure 18, a case of using the process based on partial pressure to complete the target processing results is provided. In Figure 18, the amount of trimming data (nm) is obtained by exposing the base with the oxidized limpet coating to the process recipe. The process recipe includes processing pressure and gas chemicals containing hydrogen fluoride, ammonia, and argon. Figure 18, • The molar ratio of hydrogen to ammonia (the - constant reference) When the processing pressure (the second constant parameter) is kept fixed, the trimming data is related to the partial pressure of the protonated hydrogen (variable parameter). The mass ratio is the mass ratio of each species as defined above, and the ratio has the following relationship. : 〃, 开 ti ra(HF)/m(NH3)=f(HF)/f(NH3)=[n(HF)MW(HF)]/[n(NH3)MW(NH3)](6) (HF) represents the mass flow rate of hydrogen fluoride (kg/s or _), and f represents the mass flow rate of ammonia (kg/sec or sccm). The re-entry of 18' trimming data is based on the relationship of polynomial equations. For example, the solid line is equivalent to the cubic polynomial fit of the trim amount data, and the dashed line represents the 95% confidence limit of the predicted curve fit. # Therefore 'we can select the target trim amount, and use Figure 18 The relationship (or process nucleus) determines the partial pressure of hydrogen that can achieve the target dressing amount. The known treatment pressure from Dunhua's chlorine partial pressure and the molar ratio of hydrogen fluoride to ammonia can be obtained from equation group 5 (ac, g) to determine the corresponding partial pressure of ammonia and argon partial pressure. ..., now with reference to ® 1 19, a use of partial pressure is provided. Another example of the processing result of the process is the target processing result. In this case, the trim amount data (nm) of the substrate having the oxidized oxide patterned layer can be obtained. During the passage of hydrogen fluoride, ammonia gas and argon gas, The substrate is exposed to a processing environment maintained at a processing pressure. Figure 19 shows the trim amount data (nm) as a function of hydrogen fluoride (variable parameter) partial pressure, wherein I ^ 8 29 1264079 is based on the hydrogen fluoride to ammonia Mohr ratio (the relationship of the curve fitting to the digest: as for a number of: boasting 4' minus η, the traverse line is equivalent to the trimming data = comming, and the curve fitting of the dotted line _ In the heart of the world, the deaf person can choose the target trimming amount, and use the relationship of Figure 19 (or the system to process the pressing surface. For example, the partial pressure of hydrogen fluoride is used to determine the corresponding ammonia gas ratio and the ratio, that is, the flow rate of the inert gas of the argon group 5 (the r process ^ 篁 body = 篁, for example, argon gas. Determining the result of the intended target treatment, in step 940, exposing the substrate to the chemical processing system, wherein the process recipe is based on variable parameters and/or iii1 plate to substantially m-substrate the substrate temperature in the heat treatment system Or a rinsing base, although only certain embodiments of the present invention have been described in detail above, it will be readily apparent to those skilled in the art that the invention is not limited to the scope of the present invention. All such modifications shall be included in the [Simple Description of the Drawings] in the drawings: The transmission of this (four)-Shiguan Deke material system of financial management system - the chemical treatment of the actual customs (four) and the heat treatment system (four) - real customs Chemical treatment and heat treatment system ΐ 23^^^^~ implementation _ treatment _ _ surface schematic; diagram; Μ A according to the embodiment of the chemical treatment system of the embodiment of the cross section schematic = tlr 祀 I according to the invention Chemical treatment system of an embodiment BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view showing a heat treatment system according to an embodiment of the present invention. FIG. 2 is a perspective view showing a heat treatment system according to another embodiment of the present invention; A cross-sectional schematic view of a gas distribution system according to an embodiment of the present invention. FIG. 9A shows a cross-sectional view of a gas distribution system according to another embodiment of the present invention. The gas distribution system ❻i i0A and 10β shown in FIG. 9A according to an embodiment of the present invention shows a perspective view of the gas knife arranging system shown in FIG. 9A according to an embodiment of the present invention; a substrate lifting assembly of an embodiment;

(S 1264079 Figure 12 shows a side view of a thermal insulation assembly in accordance with an embodiment of the present invention; Figure 13 shows a top view of a thermal insulation assembly in accordance with an embodiment of the present invention; and Figure 14 shows a thermal insulation assembly in accordance with an embodiment of the present invention. Cross-sectional view; Figure 5 shows a flow chart for processing the substrate; gas = 6 indicates the amount of trimming data as a function of the ratio of the emulsion forging in the chemical oxide removal process; Under another pressure-reaction, one of the chemical oxygen removal processes according to the present (four)-the actual chemical vapor removal process in the chemical oxide removal process according to another embodiment of the present invention The process mode of the knife press; and, Fig. 20 shows a method of achieving the target dressing amount by chemical oxide removal according to an embodiment of the present invention. [Main element symbol description] Bu 100, 600~ processing system 10, 110 610 to first processing system 20, 120, 620 to second processing system 30, 130, 630 to transmission system 40 to multi-component manufacturing system 50, 150, 230, 650 to thermal insulation assembly 200 to processing system 210, 210' ~Chemistry System 220, 220'~heat treatment system 211~chemical processing chamber 212, 222~ upper cover 213, 223~ handle 214, 224~ buckle 1264079 215, 225~ optical observation hole 216, 226~ pressure sensing device 217~ mirror key 221 ~ Heat treatment chamber 227 ~ substrate debt measurement system 228 ~ second thermal insulation component 229 ~ controller 231 ~ interface panel 232 ~ insulation plate 233 ~ structural contact member 234 ~ structural contact member matching surface 235 ~ alignment device 235' ~ Aligning receptacle 236 ~ fastening device (ie bolt) 236' ~ receiving device (ie screw hole) 237 ~ thermal insulation assembly flange 238 ~ 0 ring seal 239 ~ gate valve adapter plate 240, 270, 300 ~ Temperature control substrate holder 242, 242', 242" ~ substrate 244 ~ substrate holder assembly 250, 280 ~ vacuum pump system 252 ~ vacuum pump 254, 297 ~ gate valve 260 ~ gas distribution system 262 ~ processing space 266 ~ chamber wall Temperature control element 267 ~ gas distribution heating element 268 ~ chamber wall temperature control unit 33 1264079 269 ~ gas distribution system temperature control unit 272 ~ base 274 ~ insulation layer 275 ~ controller 276 ~ embedded heating element 2 78 ~ Substrate holder temperature control unit 281~hot wall temperature control unit 283~hot wall heating element 284~upper assembly 285~upper assembly heating element 286~upper assembly temperature control unit 290~substrate lifting unit 294~general opening 296~gate valve assembly 298~ Delivery opening 310 - processing chamber matching element 312 ~ isolation element 314 ~ temperature control element 320 ~ coolant channel 322 ~ coolant inlet 324 ~ coolant outlet 328 ~ electrostatic clamp 330 ~ ceramic layer 332 ~ clamp electrode 334 ~ high voltage DC Voltage supply 336 to electric wiring 340 to back side gas supply system 342 to gas supply line 344 to temperature sensing device 34 1264079 350 to thermal insulation gap 3 6 0 to lift pin assembly 362 to lift pin 400, 420 to gas distribution system 402, 422 to gas distribution unit 404 to gas distribution plate 406 to gas distribution plenum 408 to gas distribution holes 410, 410' to gas supply lines 424, 426, 428 to gas distribution assembly element 430 to first gas distribution plate 432 The second gas distribution plate 440 to the first gas distribution inflating portion 442 to the second gas distribution inflating portion 444 to the first array of openings 446~ The second array 450 of the channel 448~the opening 450~the first gas supply channel 452~the second gas supply channel 500~the blade 510~the adjustment piece 520~the flange 530 of the substrate lifting assembly~the driving system 540~the receiving hole of the substrate lifting assembly 35

Claims (1)

1264079 X. The scope of application for patents: 1. The target of the characteristic part on the substrate is trimmed except that the process is performed in the case of the chemical oxide removal process. Using a genius that contains a large number of private shackles to maintain pressure, the imaginary reagents, a second reactant, and a ♦ square are used to perform chemical oxide removal. Borrowing, owing to the material, the trimming amount is the variable parameter of the first parameter group, and the first parameter is the variable number of the first parameter : Uiiii and r process the pressure, and the amount of the second reactant is different from the variable parameter and the processing pressure; the step of correcting the relationship between the trimming and the variable parameter; using the target trimming amount and touch The county determines the target value of the variable parameter; the mduhua processing step of 'chemically treating the substrate by exposing the substrate to the target using the variable parameter and the at least-constant parameter dragon process recipe Feature section; and the target removal amount of the target a method of substantially removing the target trim amount of the feature on the substrate according to the second aspect of the patent application, wherein the method of performing the chemical oxide removal process using the process recipe is substantially The step includes: a variable tea number and at least one constant parameter different from the variable parameter; the variable number of turns is selected from a partial pressure including a first reactant, a partial pressure of a second reactant, and a treatment a group of pressure, a molar fraction of the first reactant, and a molar fraction of the second reactant; and the at least one constant parameter is selected from the partial pressure comprising the first reactant, the first The partial pressure of the second reactant, the treatment pressure, the molar fraction of the first reactant, the molar fraction of the second reactant, and the mass fraction of the first reactant to the second reactant a ratio, a molar ratio of the first reactant to the second reactant, a mass of the first reactant, a mass of the second reactant, a mass of the first reactant, a flow rate of 36 1264079, the second reaction Mass flow rate of the substance, the number of moles of the first reactant, the number Number of moles of reactant, the first group of the molar flow rate of reactants and molar flow rate of the second reactant. 3. The method for achieving a target trim amount of a feature on a substrate according to claim 1, wherein the first amount of the first reactant comprises a partial pressure of the first reactant, a partial pressure of the second reactant, a treatment pressure, a molar fraction of the first reactant, and a molar fraction of the second reactant; and the at least one constant parameter different from the variable parameter is selected from the second One of the parameter groups, the second parameter group comprising the partial pressure of the first reactant, the partial pressure of the second reactant, the treatment pressure, and the molar fraction of the first reactant Rate, the molar fraction of the second reactant, the mass fraction of the first reactant to the second reactant, the molar ratio of the first reactant to the second reactant, the first reaction The mass of the substance, the mass of the second reactant, the mass flow rate of the first reactant, the mass flow rate of the second reactant, the number of moles of the first reactant, the number of moles of the second reactant, The molar flow rate of the first reactant and the molar flow rate of the second reactant. 4·如卜, the achievement of the target trimming amount of the feature on the substrate of the Liwei item ΐ the target trimming amount substantial removal step comprises: after the chemical processing step, the heat treatment of the substrate is performed by raising the temperature of the substrate . The achievement of the target trimming amount of the feature on the substrate of the first item is included in the chemical removal step, i, such as Γί special 4; the target of the feature on the substrate of the range ^ item The trimming amount of the gas-removing system (4) includes the use of Weihua hydrogen 37 1264079 ^: the target trimming amount of the target gas on the substrate of the second item; recording = oxygen process 广 wide and tender ^ Partial pressure, (4) the first - ΐ ΐ — 茶 茶 茶 茶 茶 茶 茶 茶 茶 茶 茶 茶 茶 八 八 八 八 八 八 八 八 八 八 八 八 八 八 八 八 八 八 八 八 八 八 八 八 八 八 八 八 八 八 八 八 八The mass flow of the gas,: Ιίΐΐίϊί The molar ratio of the body. The molar ratio and the step of the second reactant to achieve the target trimming amount of the characteristic portion of the inert gas i such as the substrate include the use of a hydrogen fluoride containing body, 虱虱U and 虱Gas process recipe. The fly t is as special as 2, and the target trimming amount of the feature on the substrate of the eighth item is compensated for: the package is obtained as a function of the variable parameter by the constant parameter ', and the fixed value is The amount of trimming amount of hydrogen fluoride to ammonia mass ratio as a function of the fluorinated h pressure, and the processing pressure. $Target trimming of the features on the substrate as claimed in item i of the patent application ... wherein the warship processing step comprises a chemical treatment - oxygen cut feature. For example, please enter the target trimming amount of the feature on the substrate of the first item, and the step of the target trimming amount of the feature on the substrate of the 11th item of the patent application, Wherein the number dumping law comprises at least one of a polynomial fit and a power law fit. , with the evaluation of the 8 38 1264079 system; determining the relationship between the trimming amount and the partial pressure of the gas species at the process setting the target trim amount; the relationship of the pressure and the target trim amount (4) to determine the gas species Determining the process recipe based on the target value of the partial pressure of the gas species; chemically treating the substrate by exposing the substrate to the process recipe by a feature; The system comprises: in the sister, the target trimming amount on the substrate is changed to the system for exposing the substrate to a dream process, the amount of the processing gas, and the treatment of the milk body And a treatment pressure at an exposure time; a quantity of the rolled body and a heat treatment core for heat treating the chemically modified surface layer on the substrate; a controller connected to the chemically treated Li; The relationship between the variable parameters is the same as the younger one, the number of the first parameter group, the quantity, the quantity of the second reactant, the free choice, and the J. Stress; The different parameters of the at least one variable parameter or parameters, compared with the first group wherein ^ - A 'of the second group of parameters including the reactants of? The quantity, the quantity of the second reactant, the second of the free choices: the quantity and the treatment. 3 乳 乳 8 079 079 079 Ϊ Ϊ Ϊ Ϊ Ϊ Ϊ Ϊ Ϊ 079 079 079 079 079 079 Ϊ Ϊ 079 079 079 079 Ϊ Ϊ 079 079 079 079 079 079 079 079 079 079 079 079 079 079 079 079 079 079 079 079 Reaction, partial pressure, partial pressure of the second reactant, treatment pressure of the first reactant, the second reactant, the freely selected inert gas, the molar fraction of the first reactant, and the a group of mole fractions of the second reactant; and the one or more conventional moles are selected from the partial pressure comprising the first reactant, the partial pressure of the second reactant, The processing pressure of the first reactant, the second reactant, the freely selected inert gas, the molar fraction of the first reactant, the molar fraction of the second reactant, the a mass fraction of the first reactant to the second reactant, a molar ratio of the first anti-Φ reactant to the second reactant, a mass of the first reactant, a mass of the second reactant, Mass flow rate of the first reactant, mass flow rate of the second reactant, the first reactant The number of moles, the number of moles of the second reactant, the molar flow of the first reactant, and the mole flow of the second reactant. 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