JP6866255B2 - プラズマ処理装置 - Google Patents
プラズマ処理装置 Download PDFInfo
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- JP6866255B2 JP6866255B2 JP2017154746A JP2017154746A JP6866255B2 JP 6866255 B2 JP6866255 B2 JP 6866255B2 JP 2017154746 A JP2017154746 A JP 2017154746A JP 2017154746 A JP2017154746 A JP 2017154746A JP 6866255 B2 JP6866255 B2 JP 6866255B2
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- 239000003507 refrigerant Substances 0.000 claims description 19
- 230000002093 peripheral effect Effects 0.000 claims description 8
- 238000009832 plasma treatment Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 34
- 239000012212 insulator Substances 0.000 description 11
- 230000007246 mechanism Effects 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/002—Cooling arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2001—Maintaining constant desired temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Plasma Technology (AREA)
Description
最初に、実施形態に係るプラズマ処理装置10の概略的な構成を説明する。図1は、実施形態に係るプラズマ処理装置の概略的な構成の一例を示す概略断面図である。プラズマ処理装置10は、気密に構成され、電気的に接地電位とされた処理容器1を有している。この処理容器1は、円筒状とされ、例えば表面に陽極酸化被膜が形成されたアルミニウム等から構成されている。処理容器1は、プラズマが生成される処理空間を画成する。処理容器1内には、被処理体(work-piece)である半導体ウエハ(以下、単に「ウエハ」という。)Wを水平に支持する第1の載置台2が収容されている。
次に、第1の載置台2及び第2の載置台7の要部構成について説明する。図2は、第1の載置台及び第2の載置台の要部構成の一例を示す概略断面図である。
次に、本実施形態に係るプラズマ処理装置10の作用及び効果について説明する。エッチングなどのプラズマ処理では、ウエハWの面内の加工精度の均一性を実現するため、ウエハWの温度のみならず、ウエハWの外周領域に設置されているフォーカスリング5の温度を調整することが要求されている。
2 第1の載置台
2a 載置面
4 RFプレート
5 フォーカスリング
7 第2の載置台
9 フォーカスリングヒータ
9a ヒータ
9b 絶縁体
9d 載置面
10 プラズマ処理装置
20 第1の部材
20a 絶縁体
20b 電極
20c 平面部
20d フランジ部
21 シート部材
21a 円形部分
21b 配線部
21c ヒータ
21c1 ベースヒータ
21c2 トリムヒータ
21d 引き出し配線
22 第2の部材
22d 冷媒流路
22e 面
22f 貫通穴
24 凹部
24a 底面
24b 側面
W ウエハ
Claims (5)
- プラズマ処理の対象となる被処理体が載置される載置面に対する裏面側の前記載置面に対応する範囲に凹部が形成された第1の部材と、
シート状に形成され、ヒータおよび当該ヒータに電力を供給するための引き出し配線が設けられ、前記ヒータが前記凹部の内部の載置面に対応する領域に位置し、前記引き出し配線が前記凹部の側面に位置するように前記凹部内に配置されたシート部材と、
前記シート部材を配置した前記凹部に嵌合された第2の部材と、
を有することを特徴とするプラズマ処理装置。 - 前記第2の部材は、前記凹部の側面と対向する面に、前記凹部に対する裏面側へ連通する溝または貫通穴が形成され、
前記シート部材は、前記ヒータが設けられ、前記凹部の内部の前記載置面に対応する領域のサイズに形成されたヒータ部分と、前記引き出し配線が設けられ、当該ヒータ部分から延びた配線部とが形成され、前記配線部が前記第2の部材の前記溝または前記貫通穴を通過するように配置された
ことを特徴とする請求項1に記載のプラズマ処理装置。 - 前記第1の部材は、前記載置面を底面とした円筒状に形成され、
前記第1の部材の外周面に沿って、フォーカスリングが載置される載置台をさらに有することを特徴とする請求項1に記載のプラズマ処理装置。 - 前記載置台は、前記フォーカスリングが載置される載置面にヒータが設けられている
ことを特徴とする請求項3に記載のプラズマ処理装置。 - 前記第2の部材は、内部に、冷媒流路が形成されている
ことを特徴とする請求項1から3の何れか1つに記載のプラズマ処理装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017154746A JP6866255B2 (ja) | 2017-08-09 | 2017-08-09 | プラズマ処理装置 |
TW107126805A TW201921485A (zh) | 2017-08-09 | 2018-08-02 | 電漿處理裝置 |
KR1020180091215A KR20190016912A (ko) | 2017-08-09 | 2018-08-06 | 플라즈마 처리 장치 |
US16/057,548 US20190051501A1 (en) | 2017-08-09 | 2018-08-07 | Plasma processing apparatus |
CN202110439990.9A CN113178375A (zh) | 2017-08-09 | 2018-08-09 | 载置台和等离子体处理装置 |
CN201810901047.3A CN109390200B (zh) | 2017-08-09 | 2018-08-09 | 等离子体处理装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017154746A JP6866255B2 (ja) | 2017-08-09 | 2017-08-09 | プラズマ処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019033231A JP2019033231A (ja) | 2019-02-28 |
JP6866255B2 true JP6866255B2 (ja) | 2021-04-28 |
Family
ID=65275389
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2017154746A Active JP6866255B2 (ja) | 2017-08-09 | 2017-08-09 | プラズマ処理装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20190051501A1 (ja) |
JP (1) | JP6866255B2 (ja) |
KR (1) | KR20190016912A (ja) |
CN (2) | CN113178375A (ja) |
TW (1) | TW201921485A (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7101055B2 (ja) * | 2018-06-12 | 2022-07-14 | 東京エレクトロン株式会社 | 静電チャック、フォーカスリング、支持台、プラズマ処理装置、及びプラズマ処理方法 |
US11894255B2 (en) * | 2019-07-30 | 2024-02-06 | Applied Materials, Inc. | Sheath and temperature control of process kit |
JP2021027152A (ja) * | 2019-08-05 | 2021-02-22 | キオクシア株式会社 | プラズマ処理装置およびプラズマ処理方法 |
CN112542370B (zh) * | 2019-09-23 | 2024-04-05 | 中微半导体设备(上海)股份有限公司 | 一种等离子体处理器及其加热器组件 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05136092A (ja) * | 1991-11-12 | 1993-06-01 | Sony Corp | プラズマ装置およびこれを用いたドライエツチング方法 |
JPH1064983A (ja) * | 1996-08-16 | 1998-03-06 | Sony Corp | ウエハステージ |
JPWO2002084717A1 (ja) * | 2001-04-11 | 2004-08-05 | イビデン株式会社 | 半導体製造・検査装置用セラミックヒータ |
JP2003273075A (ja) * | 2002-03-15 | 2003-09-26 | Tokyo Electron Ltd | プラズマ処理装置 |
JP4180637B2 (ja) * | 2004-03-26 | 2008-11-12 | 株式会社日立国際電気 | 半導体製造装置および半導体装置の製造方法 |
JP4736564B2 (ja) * | 2005-06-23 | 2011-07-27 | 東京エレクトロン株式会社 | 載置台装置の取付構造及び処理装置 |
KR20070110910A (ko) * | 2005-08-05 | 2007-11-20 | 동경 엘렉트론 주식회사 | 기판 처리 장치 및 기판 탑재대 |
JP2008078208A (ja) * | 2006-09-19 | 2008-04-03 | Tokyo Electron Ltd | フォーカスリング及びプラズマ処理装置 |
JP5249689B2 (ja) * | 2008-09-16 | 2013-07-31 | 東京エレクトロン株式会社 | プラズマ処理装置および基板載置台 |
JP2010157559A (ja) * | 2008-12-26 | 2010-07-15 | Hitachi High-Technologies Corp | プラズマ処置装置 |
JP2011061040A (ja) * | 2009-09-10 | 2011-03-24 | Tokyo Electron Ltd | 載置台構造及び処理装置 |
JP2011176161A (ja) * | 2010-02-25 | 2011-09-08 | Hitachi High-Technologies Corp | プラズマ処理装置及び処理方法 |
KR101897012B1 (ko) * | 2010-12-27 | 2018-09-10 | 가부시키가이샤 크리에이티브 테크놀러지 | 워크처리장치 |
JP6276919B2 (ja) * | 2013-02-01 | 2018-02-07 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置および試料台 |
JP6219229B2 (ja) * | 2014-05-19 | 2017-10-25 | 東京エレクトロン株式会社 | ヒータ給電機構 |
JP6378942B2 (ja) | 2014-06-12 | 2018-08-22 | 東京エレクトロン株式会社 | 載置台及びプラズマ処理装置 |
JP6442296B2 (ja) * | 2014-06-24 | 2018-12-19 | 東京エレクトロン株式会社 | 載置台及びプラズマ処理装置 |
JP6556046B2 (ja) * | 2015-12-17 | 2019-08-07 | 東京エレクトロン株式会社 | プラズマ処理方法およびプラズマ処理装置 |
-
2017
- 2017-08-09 JP JP2017154746A patent/JP6866255B2/ja active Active
-
2018
- 2018-08-02 TW TW107126805A patent/TW201921485A/zh unknown
- 2018-08-06 KR KR1020180091215A patent/KR20190016912A/ko not_active Application Discontinuation
- 2018-08-07 US US16/057,548 patent/US20190051501A1/en not_active Abandoned
- 2018-08-09 CN CN202110439990.9A patent/CN113178375A/zh active Pending
- 2018-08-09 CN CN201810901047.3A patent/CN109390200B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
US20190051501A1 (en) | 2019-02-14 |
CN113178375A (zh) | 2021-07-27 |
KR20190016912A (ko) | 2019-02-19 |
CN109390200A (zh) | 2019-02-26 |
JP2019033231A (ja) | 2019-02-28 |
TW201921485A (zh) | 2019-06-01 |
CN109390200B (zh) | 2021-05-14 |
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