JP2022042379A - 載置台及びプラズマ処理装置 - Google Patents
載置台及びプラズマ処理装置 Download PDFInfo
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- H—ELECTRICITY
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- H01J37/32—Gas-filled discharge tubes
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- H01J37/32—Gas-filled discharge tubes
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- H01J37/32—Gas-filled discharge tubes
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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Abstract
Description
<プラズマ処理装置>
実施形態について説明する。最初に、第1実施形態に係るプラズマ処理装置1の概略的な構成を説明する。図1は、第1実施形態に係るプラズマ処理装置1の構成の概略を模式的に示す縦断面図である。なお、本実施形態ではプラズマ処理装置1として、容量結合型平行平板プラズマエッチング装置を例に説明する。
次に、第2実施形態について説明する。第2実施形態に係るプラズマ処理装置1は、図1に示した第1実施形態に係るプラズマ処理装置1と同様の構成であるため、説明を省略する。
次に、第3実施形態について説明する。第2実施形態に係るプラズマ処理装置1は、図1に示した第1実施形態に係るプラズマ処理装置1と同様の構成であるため、説明を省略する。
次に、第4実施形態について説明する。第4実施形態に係るプラズマ処理装置1は、図1に示した第1実施形態に係るプラズマ処理装置1と同様の構成であるため、説明を省略する。
11 載置台
12 基台
12a 基体部
12b 第1の載置部
12c 第2の載置部
12d、12e 載置面
13 エッジリング
15d 第1の吸着電極
15e 第2の吸着電極
15g、15h 凹部
17、18 ヒータ
60 デポ
70 溝
71、72 ペルチェ素子
W 基板
Claims (11)
- 基板を載置する第1の載置部と、
前記基板の周囲に配置されるリング状のエッジリングを載置する第2の載置部を有する載置台であって、
前記第2の載置部は、
電圧が印加されることにより前記エッジリングを吸着する吸着電極と、
前記吸着電極に対して前記エッジリングの内周側及び外周側の少なくとも一方に設けられた温度調整機構と、
を有する載置台。 - 前記温度調整機構は、前記エッジリングを載置する載置面側から見て、配置された領域が前記吸着電極の領域と重ならないように第2の載置部に設けられた
請求項1に記載の載置台。 - 前記温度調整機構は、前記吸着電極が配置された配置面と同一面、又は前記配置面よりも上部に設けられた
請求項1又は2に記載の載置台。 - 前記温度調整機構は、前記第2の載置部の全周に設けられた
請求項1~3の何れか1つに記載の載置台。 - 前記温度調整機構は、ヒータである
請求項1~4の何れか1つに記載の載置台。 - 前記ヒータは、前記エッジリングを載置する載置面に設けられた
請求項5に記載の載置台。 - 前記ヒータは、前記吸着電極と同一面に設けられ、一方の端部が前記吸着電極の一方の端部と接続されている
請求項5又は6に記載の載置台。 - 前記温度調整機構は、ペルチェ素子である
請求項1~5の何れか1つに記載の載置台。 - 前記ペルチェ素子は、前記第1の載置部と前記第2の載置部との間に環状に形成された溝、及び前記第2の載置部の外周に沿って形成された凹部の少なくとも一方に設けられた
請求項8に記載の載置台。 - 請求項1~9の何れか1つに記載の載置台
を有するプラズマ処理装置。 - 請求項9に記載の載置台と、
前記ペルチェ素子に電力を供給する電源と、
プラズマ処理の際、前記ペルチェ素子が冷却を行い、プラズマクリーニングの際、前記ペルチェ素子が加熱を行うよう前記電源を制御する制御部と、
を有するプラズマ処理装置。
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JP2020147793A JP2022042379A (ja) | 2020-09-02 | 2020-09-02 | 載置台及びプラズマ処理装置 |
KR1020210112291A KR20220030173A (ko) | 2020-09-02 | 2021-08-25 | 적재대 및 플라스마 처리 장치 |
US17/462,787 US20220068615A1 (en) | 2020-09-02 | 2021-08-31 | Stage and plasma processing apparatus |
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CN117612921B (zh) * | 2024-01-23 | 2024-04-09 | 上海邦芯半导体科技有限公司 | 限制环及其应用的等离子体处理装置和控制方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6035101A (en) * | 1997-02-12 | 2000-03-07 | Applied Materials, Inc. | High temperature multi-layered alloy heater assembly and related methods |
JP3650248B2 (ja) * | 1997-03-19 | 2005-05-18 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP3477062B2 (ja) * | 1997-12-26 | 2003-12-10 | 京セラ株式会社 | ウエハ加熱装置 |
US20040206747A1 (en) * | 2001-04-11 | 2004-10-21 | Yasutaka Ito | Ceramic heater for semiconductor manufacturing/inspecting apparatus |
US20040261946A1 (en) * | 2003-04-24 | 2004-12-30 | Tokyo Electron Limited | Plasma processing apparatus, focus ring, and susceptor |
US7645342B2 (en) * | 2004-11-15 | 2010-01-12 | Cree, Inc. | Restricted radiated heating assembly for high temperature processing |
US20110185969A1 (en) * | 2009-08-21 | 2011-08-04 | Varian Semiconductor Equipment Associates, Inc. | Dual heating for precise wafer temperature control |
US20120148760A1 (en) * | 2010-12-08 | 2012-06-14 | Glen Eric Egami | Induction Heating for Substrate Processing |
JP6080571B2 (ja) * | 2013-01-31 | 2017-02-15 | 東京エレクトロン株式会社 | 載置台及びプラズマ処理装置 |
JP6346855B2 (ja) * | 2014-12-25 | 2018-06-20 | 東京エレクトロン株式会社 | 静電吸着方法及び基板処理装置 |
JP6452449B2 (ja) * | 2015-01-06 | 2019-01-16 | 東京エレクトロン株式会社 | 載置台及び基板処理装置 |
US10345802B2 (en) * | 2016-02-17 | 2019-07-09 | Lam Research Corporation | Common terminal heater for ceramic pedestals used in semiconductor fabrication |
KR20170127724A (ko) * | 2016-05-12 | 2017-11-22 | 삼성전자주식회사 | 플라즈마 처리 장치 |
JP6767826B2 (ja) * | 2016-09-23 | 2020-10-14 | 日本特殊陶業株式会社 | 加熱装置 |
US20180233321A1 (en) * | 2017-02-16 | 2018-08-16 | Lam Research Corporation | Ion directionality esc |
KR102039969B1 (ko) * | 2017-05-12 | 2019-11-05 | 세메스 주식회사 | 지지 유닛 및 이를 포함하는 기판 처리 장치 |
JP6924618B2 (ja) * | 2017-05-30 | 2021-08-25 | 東京エレクトロン株式会社 | 静電チャック及びプラズマ処理装置 |
JP6861579B2 (ja) * | 2017-06-02 | 2021-04-21 | 東京エレクトロン株式会社 | プラズマ処理装置、静電吸着方法および静電吸着プログラム |
JP6966286B2 (ja) * | 2017-10-11 | 2021-11-10 | 東京エレクトロン株式会社 | プラズマ処理装置、フォーカスリングの昇降制御方法およびフォーカスリングの昇降制御プログラム |
JP2019220497A (ja) | 2018-06-15 | 2019-12-26 | 東京エレクトロン株式会社 | 載置台及びプラズマ処理装置 |
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