WO2002063697A1 - Dispositif semi-conducteur et son procede de fabrication - Google Patents

Dispositif semi-conducteur et son procede de fabrication Download PDF

Info

Publication number
WO2002063697A1
WO2002063697A1 PCT/JP2002/000977 JP0200977W WO02063697A1 WO 2002063697 A1 WO2002063697 A1 WO 2002063697A1 JP 0200977 W JP0200977 W JP 0200977W WO 02063697 A1 WO02063697 A1 WO 02063697A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor device
complete
transistor
soi
channel forming
Prior art date
Application number
PCT/JP2002/000977
Other languages
English (en)
French (fr)
Inventor
Hiroshi Komatsu
Original Assignee
Sony Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corporation filed Critical Sony Corporation
Priority to US10/240,472 priority Critical patent/US7378714B2/en
Publication of WO2002063697A1 publication Critical patent/WO2002063697A1/ja
Priority to US10/832,562 priority patent/US7253033B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
    • H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
PCT/JP2002/000977 2001-02-07 2002-02-06 Dispositif semi-conducteur et son procede de fabrication WO2002063697A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US10/240,472 US7378714B2 (en) 2001-02-07 2002-02-07 Semiconductor device and its manufacturing method
US10/832,562 US7253033B2 (en) 2001-02-07 2004-04-26 Method of manufacturing a semiconductor device that includes implanting in multiple directions a high concentration region

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2001-030441 2001-02-07
JP2001030441 2001-02-07
JP2001257203A JP3982218B2 (ja) 2001-02-07 2001-08-28 半導体装置およびその製造方法
JP2001-257203 2001-08-28

Publications (1)

Publication Number Publication Date
WO2002063697A1 true WO2002063697A1 (fr) 2002-08-15

Family

ID=26609031

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/000977 WO2002063697A1 (fr) 2001-02-07 2002-02-06 Dispositif semi-conducteur et son procede de fabrication

Country Status (5)

Country Link
US (2) US7378714B2 (ja)
JP (1) JP3982218B2 (ja)
KR (1) KR100863921B1 (ja)
TW (1) TWI295087B (ja)
WO (1) WO2002063697A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007048176B3 (de) * 2007-10-02 2008-12-04 Nordischer Maschinenbau Rud. Baader Gmbh + Co Kg Vorrichtung zum Aufnehmen und Fixieren von Fischen innerhalb einer Einrichtung zum Verarbeiten von Fischen

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3653485B2 (ja) 2001-08-31 2005-05-25 株式会社半導体理工学研究センター ポケット注入ｍｏｓｆｅｔのしきい値電圧の計算方法
JP4044446B2 (ja) * 2002-02-19 2008-02-06 セイコーインスツル株式会社 半導体装置およびその製造方法
JP2004153081A (ja) * 2002-10-31 2004-05-27 Shin Etsu Handotai Co Ltd Ｓｏｉウエーハ及びｓｏｉウエーハの製造方法
JP2004311903A (ja) * 2003-04-10 2004-11-04 Oki Electric Ind Co Ltd 半導体装置及び製造方法
JP2005129672A (ja) * 2003-10-23 2005-05-19 Nec Electronics Corp 半導体装置及びその製造方法
GB0413133D0 (en) * 2004-06-12 2004-07-14 Koninkl Philips Electronics Nv Semiconductor on insulator semiconductor device and method of manufacture
JP2008526041A (ja) * 2004-12-28 2008-07-17 エヌエックスピー ビー ヴィ 半導体デバイスの製造方法およびこの方法で製造される半導体デバイス
US7253043B2 (en) * 2005-06-14 2007-08-07 Texas Instruments Incorporated Short channel semiconductor device fabrication
EP1742271A1 (en) * 2005-07-08 2007-01-10 STMicroelectronics S.r.l. Power field effect transistor and manufacturing method thereof
US7709313B2 (en) * 2005-07-19 2010-05-04 International Business Machines Corporation High performance capacitors in planar back gates CMOS
US7776725B2 (en) * 2005-09-12 2010-08-17 International Business Machines Corporation Anti-halo compensation
US7456095B2 (en) * 2005-10-03 2008-11-25 International Business Machines Corporation Method and apparatus for forming nickel silicide with low defect density in FET devices
US7351637B2 (en) * 2006-04-10 2008-04-01 General Electric Company Semiconductor transistors having reduced channel widths and methods of fabricating same
US20070257315A1 (en) * 2006-05-04 2007-11-08 International Business Machines Corporation Ion implantation combined with in situ or ex situ heat treatment for improved field effect transistors
US7517807B1 (en) 2006-07-26 2009-04-14 General Electric Company Methods for fabricating semiconductor structures
JP2008085253A (ja) * 2006-09-29 2008-04-10 Oki Electric Ind Co Ltd 半導体装置の製造方法
US7777268B2 (en) * 2006-10-10 2010-08-17 Schiltron Corp. Dual-gate device
CA2675147C (en) * 2007-01-10 2012-09-11 Hemoshear, Llc Use of an in vitro hemodynamic endothelial/smooth muscle cell co-culture model to identify new therapeutic targets for vascular disease
JP5264197B2 (ja) * 2008-01-23 2013-08-14 キヤノン株式会社 薄膜トランジスタ
JP2010232362A (ja) * 2009-03-26 2010-10-14 Oki Semiconductor Co Ltd 半導体素子およびその製造方法
EP2320454A1 (en) * 2009-11-05 2011-05-11 S.O.I.Tec Silicon on Insulator Technologies Substrate holder and clipping device
FR2953636B1 (fr) * 2009-12-08 2012-02-10 Soitec Silicon On Insulator Procede de commande d'une cellule memoire dram sur seoi disposant d'une seconde grille de controle enterree sous la couche isolante
FR2953643B1 (fr) * 2009-12-08 2012-07-27 Soitec Silicon On Insulator Cellule memoire flash sur seoi disposant d'une seconde grille de controle enterree sous la couche isolante
FR2957193B1 (fr) 2010-03-03 2012-04-20 Soitec Silicon On Insulator Cellule a chemin de donnees sur substrat seoi avec grille de controle arriere enterree sous la couche isolante
FR2953641B1 (fr) * 2009-12-08 2012-02-10 S O I Tec Silicon On Insulator Tech Circuit de transistors homogenes sur seoi avec grille de controle arriere enterree sous la couche isolante
US8508289B2 (en) * 2009-12-08 2013-08-13 Soitec Data-path cell on an SeOI substrate with a back control gate beneath the insulating layer
FR2955203B1 (fr) * 2010-01-14 2012-03-23 Soitec Silicon On Insulator Cellule memoire dont le canal traverse une couche dielectrique enterree
FR2955200B1 (fr) 2010-01-14 2012-07-20 Soitec Silicon On Insulator Dispositif, et son procede de fabrication, disposant d'un contact entre regions semi-conductrices a travers une couche isolante enterree
FR2955195B1 (fr) * 2010-01-14 2012-03-09 Soitec Silicon On Insulator Dispositif de comparaison de donnees dans une memoire adressable par contenu sur seoi
FR2955204B1 (fr) * 2010-01-14 2012-07-20 Soitec Silicon On Insulator Cellule memoire dram disposant d'un injecteur bipolaire vertical
FR2957186B1 (fr) * 2010-03-08 2012-09-28 Soitec Silicon On Insulator Cellule memoire de type sram
FR2957449B1 (fr) * 2010-03-11 2022-07-15 S O I Tec Silicon On Insulator Tech Micro-amplificateur de lecture pour memoire
FR2958441B1 (fr) 2010-04-02 2012-07-13 Soitec Silicon On Insulator Circuit pseudo-inverseur sur seoi
EP2378549A1 (en) 2010-04-06 2011-10-19 S.O.I.Tec Silicon on Insulator Technologies Method for manufacturing a semiconductor substrate
US20110241116A1 (en) * 2010-04-06 2011-10-06 International Business Machines Corporation FET with FUSI Gate and Reduced Source/Drain Contact Resistance
EP2381470B1 (en) 2010-04-22 2012-08-22 Soitec Semiconductor device comprising a field-effect transistor in a silicon-on-insulator structure
JP6024354B2 (ja) 2012-10-02 2016-11-16 富士通セミコンダクター株式会社 半導体集積回路装置及びその製造方法
US9786546B1 (en) 2016-04-06 2017-10-10 International Business Machines Corporation Bulk to silicon on insulator device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0521800A (ja) * 1991-07-11 1993-01-29 Victor Co Of Japan Ltd Ｓｏｉｍｏｓｆｅｔ
JPH06268215A (ja) * 1993-03-10 1994-09-22 Hitachi Ltd Ｍｉｓ型半導体装置
JPH11214686A (ja) * 1998-01-27 1999-08-06 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法

Family Cites Families (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02302044A (ja) * 1989-05-16 1990-12-14 Fujitsu Ltd 半導体装置の製造方法
US5185280A (en) * 1991-01-29 1993-02-09 Texas Instruments Incorporated Method of fabricating a soi transistor with pocket implant and body-to-source (bts) contact
US5166084A (en) * 1991-09-03 1992-11-24 Motorola, Inc. Process for fabricating a silicon on insulator field effect transistor
US5273921A (en) * 1991-12-27 1993-12-28 Purdue Research Foundation Methods for fabricating a dual-gated semiconductor-on-insulator field effect transistor
JP3253808B2 (ja) * 1994-07-07 2002-02-04 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP3409542B2 (ja) * 1995-11-21 2003-05-26 ソニー株式会社 半導体装置の製造方法
US5936278A (en) * 1996-03-13 1999-08-10 Texas Instruments Incorporated Semiconductor on silicon (SOI) transistor with a halo implant
JP3222380B2 (ja) * 1996-04-25 2001-10-29 シャープ株式会社 電界効果トランジスタ、および、ｃｍｏｓトランジスタ
US7195960B2 (en) * 1996-06-28 2007-03-27 Seiko Epson Corporation Thin film transistor, manufacturing method thereof, and circuit and liquid crystal display device using the thin film transistor
JP2877103B2 (ja) * 1996-10-21 1999-03-31 日本電気株式会社 不揮発性半導体記憶装置およびその製造方法
US5773331A (en) * 1996-12-17 1998-06-30 International Business Machines Corporation Method for making single and double gate field effect transistors with sidewall source-drain contacts
SG71094A1 (en) * 1997-03-26 2000-03-21 Canon Kk Thin film formation using laser beam heating to separate layers
JPH1131743A (ja) * 1997-05-14 1999-02-02 Sony Corp 半導体装置及びその製造方法
US5923987A (en) * 1997-06-30 1999-07-13 Sun Microsystems, Inc. Method for forming MOS devices with retrograde pocket regions and counter dopant regions at the substrate surface
US6043535A (en) * 1997-08-29 2000-03-28 Texas Instruments Incorporated Self-aligned implant under transistor gate
US6141699A (en) * 1998-05-11 2000-10-31 International Business Machines Corporation Interactive display system for sequential retrieval and display of a plurality of interrelated data sets
US6207530B1 (en) * 1998-06-19 2001-03-27 International Business Machines Corporation Dual gate FET and process
US20020036328A1 (en) * 1998-11-16 2002-03-28 William R. Richards, Jr. Offset drain fermi-threshold field effect transistors
JP4332925B2 (ja) * 1999-02-25 2009-09-16 ソニー株式会社 半導体装置およびその製造方法
US20030163329A1 (en) * 1999-09-21 2003-08-28 David Bolene Method for defining an executable business model
US7113959B1 (en) * 2000-01-10 2006-09-26 Imagex, Inc. System and method of using human resources data to generate printed products
JP2001216452A (ja) * 2000-02-04 2001-08-10 Fuji Xerox Co Ltd ドキュメントサービス統合システム
US20020059274A1 (en) * 2000-03-03 2002-05-16 Hartsell Neal D. Systems and methods for configuration of information management systems
US20020038217A1 (en) * 2000-04-07 2002-03-28 Alan Young System and method for integrated data analysis and management
US6982460B1 (en) * 2000-07-07 2006-01-03 International Business Machines Corporation Self-aligned gate MOSFET with separate gates
US6978247B1 (en) * 2000-06-07 2005-12-20 Avaya Technology Corp. Multimedia customer care center having a layered control architecture
AU2002239620A1 (en) * 2000-11-06 2002-05-27 Terry Bernard Young Electronic markets business interchange system and metheo
US6541821B1 (en) * 2000-12-07 2003-04-01 Advanced Micro Devices, Inc. SOI device with source/drain extensions and adjacent shallow pockets
US6432754B1 (en) * 2001-02-20 2002-08-13 International Business Machines Corporation Double SOI device with recess etch and epitaxy
US6432763B1 (en) * 2001-03-15 2002-08-13 Advanced Micro Devices, Inc. Field effect transistor having doped gate with prevention of contamination from the gate during implantation
US6521949B2 (en) * 2001-05-03 2003-02-18 International Business Machines Corporation SOI transistor with polysilicon seed
US6645795B2 (en) * 2001-05-03 2003-11-11 International Business Machines Corporation Polysilicon doped transistor using silicon-on-insulator and double silicon-on-insulator
US6759282B2 (en) * 2001-06-12 2004-07-06 International Business Machines Corporation Method and structure for buried circuits and devices
US7603289B2 (en) * 2001-07-13 2009-10-13 Siemens Aktiengesellschaft System and method for electronic delivery of content for industrial automation systems
US7831655B2 (en) * 2001-10-18 2010-11-09 Bea Systems, Inc. System and method for implementing a service adapter
US6433609B1 (en) * 2001-11-19 2002-08-13 International Business Machines Corporation Double-gate low power SOI active clamp network for single power supply and multiple power supply applications
US7185317B2 (en) * 2002-02-14 2007-02-27 Hubbard & Wells Logical data modeling and integrated application framework
JP2003282879A (ja) * 2002-03-22 2003-10-03 Sony Corp 半導体装置の製造方法
US6580132B1 (en) * 2002-04-10 2003-06-17 International Business Machines Corporation Damascene double-gate FET
US6664598B1 (en) * 2002-09-05 2003-12-16 International Business Machines Corporation Polysilicon back-gated SOI MOSFET for dynamic threshold voltage control
US6812527B2 (en) * 2002-09-05 2004-11-02 International Business Machines Corporation Method to control device threshold of SOI MOSFET's
US6686637B1 (en) * 2002-11-21 2004-02-03 International Business Machines Corporation Gate structure with independently tailored vertical doping profile
US6833569B2 (en) * 2002-12-23 2004-12-21 International Business Machines Corporation Self-aligned planar double-gate process by amorphization
US8935298B2 (en) * 2002-12-30 2015-01-13 Fisher-Rosemount Systems, Inc. Integrated navigational tree importation and generation in a process plant
US7437675B2 (en) * 2003-02-03 2008-10-14 Hewlett-Packard Development Company, L.P. System and method for monitoring event based systems
WO2004104739A2 (en) * 2003-05-14 2004-12-02 Rhysome, Inc. Method and system for reducing information latency in a business enterprise
US7426736B2 (en) * 2003-05-22 2008-09-16 International Business Machines Corporation Business systems management solution for end-to-end event management using business system operational constraints
US20040249644A1 (en) * 2003-06-06 2004-12-09 International Business Machines Corporation Method and structure for near real-time dynamic ETL (extraction, transformation, loading) processing
US7018873B2 (en) * 2003-08-13 2006-03-28 International Business Machines Corporation Method of making a device threshold control of front-gate silicon-on-insulator MOSFET using a self-aligned back-gate

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0521800A (ja) * 1991-07-11 1993-01-29 Victor Co Of Japan Ltd Ｓｏｉｍｏｓｆｅｔ
JPH06268215A (ja) * 1993-03-10 1994-09-22 Hitachi Ltd Ｍｉｓ型半導体装置
JPH11214686A (ja) * 1998-01-27 1999-08-06 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007048176B3 (de) * 2007-10-02 2008-12-04 Nordischer Maschinenbau Rud. Baader Gmbh + Co Kg Vorrichtung zum Aufnehmen und Fixieren von Fischen innerhalb einer Einrichtung zum Verarbeiten von Fischen

Also Published As

Publication number Publication date
JP2002314091A (ja) 2002-10-25
US20040197970A1 (en) 2004-10-07
KR20020092414A (ko) 2002-12-11
KR100863921B1 (ko) 2008-10-17
US7253033B2 (en) 2007-08-07
US7378714B2 (en) 2008-05-27
TWI295087B (ja) 2008-03-21
JP3982218B2 (ja) 2007-09-26
US20030122164A1 (en) 2003-07-03

Similar Documents

Publication Publication Date Title
WO2002063697A1 (fr) Dispositif semi-conducteur et son procede de fabrication
WO2003026019A1 (fr) Dispositif a semi-conducteurs et procede de production correspondant
EP1271656A3 (en) Thin film Semiconductor device and method of manufacturing the same
US8120065B2 (en) Tensile strained NMOS transistor using group III-N source/drain regions
EP1130653A3 (en) Field-effect transistor and method of making the same
TW200633212A (en) Semiconductor device including field-effect transistor
EP1487023A3 (en) Semiconductor device comprising a MIS transistor and method for manufacturing the same
WO2004064172A3 (en) An enhancement mode metal-oxide-semiconductor field effect transistor and method for forming the same
EP2093799A3 (en) Integrated circuit with closely coupled high-voltage output and offline transistor pair
WO2004073044A3 (en) Finfet device and method to make same
TW200701446A (en) Semiconductor device and image display apparatus
EP1001467A3 (en) Semiconductor device and method of manufacturing the same
WO2005101515A3 (en) Process to improve transistor drive current through the use of strain
WO2003036729A8 (en) Delta doped silicon carbide metal-semiconductor field effect transistors and methods of fabricating them
EP1548831A4 (en) SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
KR950034761A (ko) 고전압ㆍ금속 산화물 반도체 장치 및 그 제조 방법
TWI268557B (en) Semiconductor device, accumulation mode multiple-gate transistor and methods of fabricating the same
EP0782182A3 (en) MOS transistor and manufacturing method of the same
WO2002078090A3 (en) Field-effect transistor structure and method of manufacture
WO2003038906A3 (en) Lateral soi field-effect transistor and method of making the same
WO2003036714A1 (fr) Procede de fabrication de misfet longitudinal, misfet longitudinal, procede de fabrication de dispositif de stockage a semi-conducteur et dispositif de stockage a semi-conducteur
WO2003032401A1 (en) Semiconductor device and its manufacturing method
EP1152470A3 (en) Semiconductor device with LDD structure and process of manufacturing the same
TW200616097A (en) Method of manufacturing a semiconductor device and semiconductor device obtained with such a method
TW200503175A (en) Transistor device and forming method thereof and CMOS device manufacturing method

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): KR US

WWE Wipo information: entry into national phase

Ref document number: 1020027013176

Country of ref document: KR

Ref document number: 10240472

Country of ref document: US

WWP Wipo information: published in national office

Ref document number: 1020027013176

Country of ref document: KR