WO2001078041A1 - Bauelement mit beschriftung - Google Patents
Bauelement mit beschriftung Download PDFInfo
- Publication number
- WO2001078041A1 WO2001078041A1 PCT/DE2001/000833 DE0100833W WO0178041A1 WO 2001078041 A1 WO2001078041 A1 WO 2001078041A1 DE 0100833 W DE0100833 W DE 0100833W WO 0178041 A1 WO0178041 A1 WO 0178041A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- contrast
- component
- cover layer
- component according
- Prior art date
Links
- 230000003287 optical effect Effects 0.000 claims abstract description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 20
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- 239000004922 lacquer Substances 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 65
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 230000005670 electromagnetic radiation Effects 0.000 description 5
- 238000002372 labelling Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000001465 metallisation Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000003086 colorant Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- NSMXQKNUPPXBRG-SECBINFHSA-N (R)-lisofylline Chemical compound O=C1N(CCCC[C@H](O)C)C(=O)N(C)C2=C1N(C)C=N2 NSMXQKNUPPXBRG-SECBINFHSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
- C23C28/021—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material including at least one metal alloy layer
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
- C23C28/023—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material only coatings of metal elements only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
- C23C28/028—Including graded layers in composition or in physical properties, e.g. density, porosity, grain size
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F3/00—Labels, tag tickets, or similar identification or indication means; Seals; Postage or like stamps
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F7/00—Signs, name or number plates, letters, numerals, or symbols; Panels or boards
- G09F7/16—Letters, numerals, or other symbols adapted for permanent fixing to a support
- G09F7/165—Letters, numerals, or other symbols adapted for permanent fixing to a support obtained by a treatment of the support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M5/00—Duplicating or marking methods; Sheet materials for use therein
- B41M5/24—Ablative recording, e.g. by burning marks; Spark recording
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54473—Marks applied to semiconductor devices or parts for use after dicing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05568—Disposition the whole external layer protruding from the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05573—Single external layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0102—Calcium [Ca]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01068—Erbium [Er]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/162—Disposition
- H01L2924/16235—Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Definitions
- the invention relates to a component, in particular a miniaturized passive component.
- a label In order to identify electrical, electronic and in particular passive components, these are usually provided with a label. This can provide information about the manufacturer, the type or the specifications of the component and, if applicable, the serial number or article name. Larger components that have sufficiently large areas for receiving a label can be printed in a simple manner, for example by means of screen printing. For smaller components with dimensions of e.g. below 1mm there is not enough printable area available for the creation of a label. Alternatively, these components can be labeled using a laser, which enables even the smallest font sizes to be created.
- laser labeling can only be used to create labels that are difficult to read or not at all, since there can be no sufficient contrast created by material removal.
- contrast layer that are easy to apply and that have a good optical contrast to the metallic cover layer can be used for the contrast layer.
- contrast layers that are compatible with the manufacturing steps of the component are easy to apply.
- cover layers are particularly preferred, the application of which can be introduced seamlessly into the manufacturing process of the component and which in particular can use the same apparatus that is required for previous method steps in the production of the component.
- the contrast layer is produced immediately after the production of the metallic cover layer, the contrast layer preferably also being a metallic layer which differs from the metallic cover layer in terms of its optical properties.
- the contrast layer preferably also being a metallic layer which differs from the metallic cover layer in terms of its optical properties.
- a distinction between two metallic layers can be achieved, for example, via the reflection behavior of the metallic layers, which is particularly dependent on the modification or fine structure of the layer.
- the color of the contrast layer can differ from the metallic cover layer or metals of different colors can be used for the layers.
- contrast layer other materials can be selected for the contrast layer, for example lacquer layers and in particular colored, especially black colored lacquer layers.
- lacquer layers and in particular colored, especially black colored lacquer layers.
- Purely metallic layer combinations produced one above the other, in which a good optical contrast can be produced by laser inscription, and which can be applied serially and in particular using the same or similar device, are for example:
- Preferred layer combinations are those which comprise two different modifications of the same metal. These are generated in particular by different manufacturing conditions.
- the composition or the corresponding optical layer properties can be set by varying the process parameters or deposition conditions.
- Layer sequences which can be applied in series and comprise a metal layer (also a covering layer), which form an optical contrast to one another and which can be inscribed or removed with a laser, are also the following measurements. tall / metal combinations, which are characterized by different metal colors:
- the same deposition conditions are preferred for these differently colored metal layer combinations, of which at least the lower layer can be the metallic cover layer or part of the metallic cover layer.
- the contrast is generated solely by differently colored metal layers or the metal layer regions remaining after the laser inscription, a reflection contrast can be produced in addition to the color contrast. It is preferred if the upper layer (contrast layer) is poorly reflective, while the lower layer, which can be exposed by laser inscription, is good reflective
- An electrophoretic process is also suitable for applying a contrast layer consisting of lacquer and in particular black lacquer.
- a number of different varnishes are suitable for these, the material or composition of which, apart from the contrast, are otherwise subject to little or no requirements.
- the invention is advantageously used for components which have or require a metallic cover layer as a functional layer.
- a metallic cover layer can be, for example, a metallic cover cap.
- the metallic cover layer can also be a metal lical housing or part of such, in which any component is arranged.
- Metallic cover layers are also used in particular as shielding layers against electromagnetic radiation. Such shielding may be necessary to prevent the radiation of electromagnetic radiation from the component itself.
- a component is possible which has a metallic cover layer which serves to shield electromagnetic radiation acting from the outside, in particular if the component is sensitive to the electromagnetic radiation.
- the components are therefore preferably components operated at high frequency, in particular surface-wave components for the HF range.
- FIG. 1 shows components mounted on a carrier with a multilayer metallization in a schematic cross section
- FIG. 2 shows a schematic cross-section of an inscription generated in the multilayer metallization.
- FIG. 1 The invention is preferably used for surface wave components, in particular surface wave filters, which are applied to base substrates 2 using flip-chip technology.
- the piezoelectric component substrate 1, which carries the active component structures 6, is connected to the panel 2 via suitable solder connections 5, in particular via bumps face-down, so that the component structures between the component substrate and the panel are arranged in a protected distance from the latter , Several components are preferably on one panel applied and only separated after completion of all cover layers.
- the active component structures 6 can also be covered with a covering cap 7, which is produced directly on the surface of the component substrate 1 (chip) in an integrated method designated by the applicant as PROTEC. This leaves a clear cavity above the component structures 6, which mechanically protects them during the process.
- the bumps 5 connect the connection pads 9 on the chip 1, which are electrically conductively connected to the active component structures 6, to the underbump metallization on the base 2.
- Via vias 3 in the panel an electrically conductive connection to the connection metallizations 10 on the Manufactured underside of the panel 2, with the aid of which the component can be connected to a circuit in SMD construction, for example, generated on a circuit board or a module.
- the panel is made of plastic or ceramic and preferably has two layers. This creates a metallization level between the layers, so that conductor tracks can be routed without crossing. In addition, this allows through-contacts 3 which are laterally offset from one another and which, in contrast to through-contacts which lead straight through the panel 2, can be produced in a hermetically sealed manner.
- a metallic layer comprising several layers 11, 12, 13, 14 is applied on the back of the component substrate in such a way that it hermetically seals against the panel 2 and thus hermetically seals the entire component.
- an underfiller 15 can be applied as a seal, which surrounds the component substrate 1 in a ring and closes the free space between the component substrate 1 and panel 2 at least in the outer region of the component substrate (see FIG. 1).
- the underfiller 15 can by
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- Theoretical Computer Science (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Laminated Bodies (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Medicines That Contain Protein Lipid Enzymes And Other Medicines (AREA)
- Laser Beam Processing (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE50114686T DE50114686D1 (de) | 2000-04-05 | 2001-03-05 | Bauelement mit beschriftung |
JP2001575408A JP4709463B2 (ja) | 2000-04-05 | 2001-03-05 | 銘入り素子 |
EP01916902A EP1269450B1 (de) | 2000-04-05 | 2001-03-05 | Bauelement mit beschriftung |
US10/240,872 US6838739B2 (en) | 2000-04-05 | 2001-03-05 | Component with a label |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10016867A DE10016867A1 (de) | 2000-04-05 | 2000-04-05 | Bauelement mit Beschriftung |
DE10016867.1 | 2000-04-05 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2001078041A1 true WO2001078041A1 (de) | 2001-10-18 |
Family
ID=7637633
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE2001/000833 WO2001078041A1 (de) | 2000-04-05 | 2001-03-05 | Bauelement mit beschriftung |
Country Status (6)
Country | Link |
---|---|
US (1) | US6838739B2 (de) |
EP (1) | EP1269450B1 (de) |
JP (1) | JP4709463B2 (de) |
CN (1) | CN1193325C (de) |
DE (2) | DE10016867A1 (de) |
WO (1) | WO2001078041A1 (de) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003058810A1 (de) * | 2001-12-28 | 2003-07-17 | Epcos Ag | Verkapseltes bauelement mit geringer bauhöhe sowie verfahren zur herstellung |
FR2849949A1 (fr) * | 2003-01-13 | 2004-07-16 | Marc Degand | Plaque d'identification inalterable |
WO2005001934A2 (de) * | 2003-06-30 | 2005-01-06 | Siemens Aktiengesellschaft | Hochfrequenz-package |
DE10164502B4 (de) * | 2001-12-28 | 2013-07-04 | Epcos Ag | Verfahren zur hermetischen Verkapselung eines Bauelements |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10300958A1 (de) * | 2003-01-13 | 2004-07-22 | Epcos Ag | Modul mit Verkapselung |
US6992400B2 (en) * | 2004-01-30 | 2006-01-31 | Nokia Corporation | Encapsulated electronics device with improved heat dissipation |
US7608789B2 (en) * | 2004-08-12 | 2009-10-27 | Epcos Ag | Component arrangement provided with a carrier substrate |
DE102005007608B4 (de) * | 2005-02-18 | 2017-09-21 | Epcos Ag | Anordnung aufweisend einen Kondensator und eine Schablone |
DE102005008514B4 (de) * | 2005-02-24 | 2019-05-16 | Tdk Corporation | Mikrofonmembran und Mikrofon mit der Mikrofonmembran |
DE102005008512B4 (de) | 2005-02-24 | 2016-06-23 | Epcos Ag | Elektrisches Modul mit einem MEMS-Mikrofon |
DE102005008511B4 (de) * | 2005-02-24 | 2019-09-12 | Tdk Corporation | MEMS-Mikrofon |
US20060261607A1 (en) * | 2005-05-19 | 2006-11-23 | Kromkowski Joseph S | Security seal with peel off label |
DE102005053767B4 (de) * | 2005-11-10 | 2014-10-30 | Epcos Ag | MEMS-Mikrofon, Verfahren zur Herstellung und Verfahren zum Einbau |
DE102005053765B4 (de) * | 2005-11-10 | 2016-04-14 | Epcos Ag | MEMS-Package und Verfahren zur Herstellung |
DE102006019118B4 (de) * | 2006-04-25 | 2011-08-18 | Epcos Ag, 81669 | Bauelement mit optischer Markierung und Verfahren zur Herstellung |
US7615404B2 (en) * | 2006-10-31 | 2009-11-10 | Intel Corporation | High-contrast laser mark on substrate surfaces |
US10471679B2 (en) | 2010-02-04 | 2019-11-12 | Wire Art Switzerland Sa | Metal graphic and method to produce a metal graphic |
ITMI20101415A1 (it) * | 2010-07-29 | 2012-01-30 | St Microelectronics Srl | Circuiti integrati tracciabili e relativo metodo di produzione |
CN105702664A (zh) * | 2012-11-16 | 2016-06-22 | 日月光半导体制造股份有限公司 | 半导体封装构造及其制造方法 |
DE102013106353B4 (de) * | 2013-06-18 | 2018-06-28 | Tdk Corporation | Verfahren zum Aufbringen einer strukturierten Beschichtung auf ein Bauelement |
CN107535078B (zh) * | 2015-05-20 | 2020-03-31 | 株式会社村田制作所 | 高频模块 |
DE102018116821A1 (de) | 2018-07-11 | 2020-01-16 | Osram Opto Semiconductors Gmbh | Elektronisches Halbleiterbauelement und Verfahren zur Herstellung eines elektronischen Halbleiterbauelements |
US20200388576A1 (en) * | 2019-06-10 | 2020-12-10 | Intel Corporation | Layer for etched identification marks on a package |
US11244876B2 (en) | 2019-10-09 | 2022-02-08 | Microchip Technology Inc. | Packaged semiconductor die with micro-cavity |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3939575A1 (de) * | 1989-11-30 | 1991-06-06 | Dornier Luftfahrt | Metallischer streifencodetraeger |
JPH06142952A (ja) * | 1992-11-05 | 1994-05-24 | Toshiba Corp | レーザマーキング加工方法 |
JPH11156565A (ja) * | 1997-11-28 | 1999-06-15 | Toshiba Corp | 金属層へのマーク付け方法と金属層および半導体装置 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0761552B2 (ja) * | 1989-03-17 | 1995-07-05 | 富士通株式会社 | バーコードの書き込み方法 |
US6242842B1 (en) * | 1996-12-16 | 2001-06-05 | Siemens Matsushita Components Gmbh & Co. Kg | Electrical component, in particular saw component operating with surface acoustic waves, and a method for its production |
-
2000
- 2000-04-05 DE DE10016867A patent/DE10016867A1/de not_active Ceased
-
2001
- 2001-03-05 DE DE50114686T patent/DE50114686D1/de not_active Expired - Lifetime
- 2001-03-05 EP EP01916902A patent/EP1269450B1/de not_active Expired - Lifetime
- 2001-03-05 US US10/240,872 patent/US6838739B2/en not_active Expired - Lifetime
- 2001-03-05 CN CNB018078079A patent/CN1193325C/zh not_active Expired - Lifetime
- 2001-03-05 WO PCT/DE2001/000833 patent/WO2001078041A1/de active Application Filing
- 2001-03-05 JP JP2001575408A patent/JP4709463B2/ja not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3939575A1 (de) * | 1989-11-30 | 1991-06-06 | Dornier Luftfahrt | Metallischer streifencodetraeger |
JPH06142952A (ja) * | 1992-11-05 | 1994-05-24 | Toshiba Corp | レーザマーキング加工方法 |
JPH11156565A (ja) * | 1997-11-28 | 1999-06-15 | Toshiba Corp | 金属層へのマーク付け方法と金属層および半導体装置 |
US6143587A (en) * | 1997-11-28 | 2000-11-07 | Kabushiki Kaisha Toshiba | Method of marking on semiconductor device having metallic layer |
Non-Patent Citations (2)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 018, no. 449 (M - 1660) 22 August 1994 (1994-08-22) * |
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 11 30 September 1999 (1999-09-30) * |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003058810A1 (de) * | 2001-12-28 | 2003-07-17 | Epcos Ag | Verkapseltes bauelement mit geringer bauhöhe sowie verfahren zur herstellung |
US6982380B2 (en) | 2001-12-28 | 2006-01-03 | Epcos Ag | Encapsulated component which is small in terms of height and method for producing the same |
DE10164502B4 (de) * | 2001-12-28 | 2013-07-04 | Epcos Ag | Verfahren zur hermetischen Verkapselung eines Bauelements |
FR2849949A1 (fr) * | 2003-01-13 | 2004-07-16 | Marc Degand | Plaque d'identification inalterable |
WO2005001934A2 (de) * | 2003-06-30 | 2005-01-06 | Siemens Aktiengesellschaft | Hochfrequenz-package |
WO2005001934A3 (de) * | 2003-06-30 | 2005-05-12 | Siemens Ag | Hochfrequenz-package |
Also Published As
Publication number | Publication date |
---|---|
EP1269450A1 (de) | 2003-01-02 |
CN1422418A (zh) | 2003-06-04 |
JP4709463B2 (ja) | 2011-06-22 |
US20030047806A1 (en) | 2003-03-13 |
CN1193325C (zh) | 2005-03-16 |
EP1269450B1 (de) | 2009-01-28 |
DE50114686D1 (de) | 2009-03-19 |
US6838739B2 (en) | 2005-01-04 |
JP2003530771A (ja) | 2003-10-14 |
DE10016867A1 (de) | 2001-10-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2001078041A1 (de) | Bauelement mit beschriftung | |
DE10164494B4 (de) | Verkapseltes Bauelement mit geringer Bauhöhe sowie Verfahren zur Herstellung | |
DE10118231A1 (de) | Optoelektronische Baulelmentanordnung und Verfahren zur Herstellun einer oploelektronischen Bauelementanordnung | |
WO1999043084A1 (de) | Verfahren zur herstellung eines elektronischen bauelements, insbesondere eines mit akustischen oberflächenwellen arbeitenden ofw-bauelements | |
WO2005102910A1 (de) | Verkapseltes elektrisches bauelement und verfahren zur herstellung | |
EP1602625A1 (de) | Halbleitermodul mit einem Halbleiter-Sensorchip und einem Kunststoffgehäuse sowie Verfahren zu dessen Herstellung | |
WO2005041295A2 (de) | Halbleitermodul mit gehäusedurchkontakten | |
DE19548046C2 (de) | Verfahren zur Herstellung von für eine Flip-Chip-Montage geeigneten Kontakten von elektrischen Bauelementen | |
WO2007121737A1 (de) | Element mit optischer markierung, verfahren zur herstellung und verwendung | |
EP0868779B1 (de) | Elektronisches bauelement, insbesondere mit akustischen oberflächenwellen arbeitendes bauelement - ofw-bauelement | |
EP1078451A1 (de) | Elektronisches bauelement | |
DE10144467B4 (de) | Elektronisches Sensorbauteil und Verfahren zu seiner Herstellung | |
EP0645953B1 (de) | Verfahren zur Herstellung einer zwei- oder mehrlagigen Verdrahtung und danach hergestellte zwei- oder mehrlagige Verdrahtung | |
DE19820319B4 (de) | Halbleiterbaustein | |
DE10224789A1 (de) | Vergossene integrierte Hybridschaltung und Verfahren zur Herstellung der vergossenen integrierten Hybridschaltung | |
DE68914927T2 (de) | Halbleiteranordnung vom mit Plastik umhüllten Typ und Verfahren zur Herstellung derselben. | |
DE102005043657B4 (de) | Chipmodul, Verfahren zur Verkapselung eines Chips und Verwendung eines Verkapselungsmaterials | |
US6555758B1 (en) | Multiple blank for electronic components such as SAW components, and method of building up bumps, solder frames, spacers and the like | |
DE3885624T2 (de) | UV-Lichtdurchlässiges Gehäuse für integrierte Schaltungen. | |
EP0472766A1 (de) | Verfahren zum Abdecken eines kontaktierten Halbleiterchips | |
DE10239081A1 (de) | Verfahren zur Herstellung einer Halbleitereinrichtung und entsprechende Halbleitereinrichtung | |
DE10065896B4 (de) | Elektronisches Bauteil mit Abschirmung und Verfahren zu seiner Herstellung | |
DE19826426C2 (de) | Miniaturisiertes elektronisches System und Verfahren zu seiner Herstellung | |
WO2020144280A1 (de) | Optoelektronisches bauelement und verfahren zur herstellung eines optoelektronischen bauelements | |
DE102015120647B4 (de) | Elektrisches Bauelement mit dünner Lot-Stopp-Schicht und Verfahren zur Herstellung |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): CN JP US |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
WWE | Wipo information: entry into national phase |
Ref document number: 2001916902 Country of ref document: EP |
|
ENP | Entry into the national phase |
Ref country code: JP Ref document number: 2001 575408 Kind code of ref document: A Format of ref document f/p: F |
|
WWE | Wipo information: entry into national phase |
Ref document number: 10240872 Country of ref document: US |
|
WWE | Wipo information: entry into national phase |
Ref document number: 018078079 Country of ref document: CN |
|
WWP | Wipo information: published in national office |
Ref document number: 2001916902 Country of ref document: EP |